AU2002214190A1 - Crystals comprising single-walled carbon nanotubes - Google Patents

Crystals comprising single-walled carbon nanotubes

Info

Publication number
AU2002214190A1
AU2002214190A1 AU2002214190A AU1419002A AU2002214190A1 AU 2002214190 A1 AU2002214190 A1 AU 2002214190A1 AU 2002214190 A AU2002214190 A AU 2002214190A AU 1419002 A AU1419002 A AU 1419002A AU 2002214190 A1 AU2002214190 A1 AU 2002214190A1
Authority
AU
Australia
Prior art keywords
crystals
carbon nanotubes
walled carbon
walled
nanotubes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002214190A
Inventor
James Gimzewski
Reto Schlittler
Jin Won Seo
Mark E. Welland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Cambridge
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of AU2002214190A1 publication Critical patent/AU2002214190A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/02—Single-walled nanotubes
AU2002214190A 2000-11-13 2001-11-12 Crystals comprising single-walled carbon nanotubes Abandoned AU2002214190A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP00124766 2000-11-13
EP00124766 2000-11-13
EP01100543 2001-01-10
EP01100543 2001-01-10
PCT/IB2001/002123 WO2002038496A1 (en) 2000-11-13 2001-11-12 Crystals comprising single-walled carbon nanotubes

Publications (1)

Publication Number Publication Date
AU2002214190A1 true AU2002214190A1 (en) 2002-05-21

Family

ID=26071588

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002214190A Abandoned AU2002214190A1 (en) 2000-11-13 2001-11-12 Crystals comprising single-walled carbon nanotubes

Country Status (7)

Country Link
US (1) US20040115114A1 (en)
EP (1) EP1337461A1 (en)
JP (1) JP2004513054A (en)
KR (1) KR20040010558A (en)
CN (1) CN1541185A (en)
AU (1) AU2002214190A1 (en)
WO (1) WO2002038496A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100457609C (en) * 2000-11-13 2009-02-04 国际商业机器公司 Manufacturing method and application of single wall carbon nano tube
KR100490472B1 (en) * 2002-06-04 2005-05-19 충남대학교산학협력단 Carbon nanotubes synthesis method using magnetic fluids
US7776444B2 (en) * 2002-07-19 2010-08-17 University Of Florida Research Foundation, Inc. Transparent and electrically conductive single wall carbon nanotube films
US20060093545A1 (en) * 2003-02-07 2006-05-04 Bussan Nanotech Research Institute Inc. Process for producing monolayer carbon nanotube with uniform diameter
CA2602599A1 (en) * 2005-03-29 2006-10-19 Hyperion Catalysis International, Inc. Method for preparing single walled carbon nanotubes from a metal layer
US7947247B2 (en) 2005-03-29 2011-05-24 Hyperion Catalysis International, Inc. Method for preparing single walled carbon nanotubes from a metal layer
JP2009538809A (en) * 2006-03-29 2009-11-12 ハイピリオン カタリシス インターナショナル インコーポレイテッド Method for producing single-walled carbon nanotubes from a metal layer
EP2001795A4 (en) 2006-03-29 2012-06-27 Hyperion Catalysis Int Method for preparing uniform single walled carbon nanotubes
US20100117764A1 (en) * 2006-04-17 2010-05-13 Board Of Regents, The University Of Texas System Assisted selective growth of highly dense and vertically aligned carbon nanotubes
JP5125195B2 (en) * 2007-04-13 2013-01-23 トヨタ自動車株式会社 Quantum dot manufacturing method
CN101400198B (en) 2007-09-28 2010-09-29 北京富纳特创新科技有限公司 Surface heating light source, preparation thereof and method for heat object application
CN101409962B (en) 2007-10-10 2010-11-10 清华大学 Surface heat light source and preparation method thereof
CN102019039B (en) * 2009-09-11 2013-08-21 清华大学 Infrared physiotherapy apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805431A (en) * 1996-01-17 1998-09-08 Synergy Microwave Corporation Surface Mountable transformer
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
JP2003092218A (en) * 2001-09-18 2003-03-28 Hitachi Cable Ltd Coil for electric/electronic equipment, and manufacturing method therefor

Also Published As

Publication number Publication date
KR20040010558A (en) 2004-01-31
WO2002038496A1 (en) 2002-05-16
JP2004513054A (en) 2004-04-30
CN1541185A (en) 2004-10-27
US20040115114A1 (en) 2004-06-17
EP1337461A1 (en) 2003-08-27

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