GB2382718B - Field effect transistor using horizontally grown carbon nanotubes - Google Patents

Field effect transistor using horizontally grown carbon nanotubes

Info

Publication number
GB2382718B
GB2382718B GB0218564A GB0218564A GB2382718B GB 2382718 B GB2382718 B GB 2382718B GB 0218564 A GB0218564 A GB 0218564A GB 0218564 A GB0218564 A GB 0218564A GB 2382718 B GB2382718 B GB 2382718B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
carbon nanotubes
grown carbon
horizontally grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0218564A
Other versions
GB2382718A (en
GB0218564D0 (en
Inventor
Jin Koog Shin
Kyu Tae Kim
Min Jae Jung
Sang Soo Yoon
Young Soo Han
Jae Eun Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2000-0041012A external-priority patent/KR100379470B1/en
Priority claimed from KR1020000068966A external-priority patent/KR100350794B1/en
Priority claimed from KR10-2001-0034013A external-priority patent/KR100405974B1/en
Priority claimed from KR10-2001-0037496A external-priority patent/KR100434272B1/en
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Priority claimed from GB0117520A external-priority patent/GB2364933B/en
Publication of GB0218564D0 publication Critical patent/GB0218564D0/en
Publication of GB2382718A publication Critical patent/GB2382718A/en
Application granted granted Critical
Publication of GB2382718B publication Critical patent/GB2382718B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
GB0218564A 2000-07-18 2001-07-18 Field effect transistor using horizontally grown carbon nanotubes Expired - Fee Related GB2382718B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2000-0041012A KR100379470B1 (en) 2000-07-18 2000-07-18 Method for developing carbon nanotube horizontally
KR1020000068966A KR100350794B1 (en) 2000-11-20 2000-11-20 Spin valve SET using a carbon nanotube
KR10-2001-0034013A KR100405974B1 (en) 2001-06-15 2001-06-15 Method for developing carbon nanotube horizontally
KR10-2001-0037496A KR100434272B1 (en) 2001-06-28 2001-06-28 Method for developing carbon nanotube horizontally
GB0117520A GB2364933B (en) 2000-07-18 2001-07-18 Method of horizontally growing carbon nanotubes

Publications (3)

Publication Number Publication Date
GB0218564D0 GB0218564D0 (en) 2002-09-18
GB2382718A GB2382718A (en) 2003-06-04
GB2382718B true GB2382718B (en) 2004-03-24

Family

ID=27516026

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0218564A Expired - Fee Related GB2382718B (en) 2000-07-18 2001-07-18 Field effect transistor using horizontally grown carbon nanotubes

Country Status (1)

Country Link
GB (1) GB2382718B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10250830B4 (en) * 2002-10-31 2015-02-26 Qimonda Ag Method for producing a circuit array
US7378715B2 (en) * 2003-10-10 2008-05-27 General Electric Company Free-standing electrostatically-doped carbon nanotube device
US20050145838A1 (en) * 2004-01-07 2005-07-07 International Business Machines Corporation Vertical Carbon Nanotube Field Effect Transistor
DE102004001340A1 (en) 2004-01-08 2005-08-04 Infineon Technologies Ag Method for fabricating a nanoelement field effect transistor, nanoelement field effect transistor and nanoelement arrangement
GB0415891D0 (en) 2004-07-16 2004-08-18 Koninkl Philips Electronics Nv Nanoscale fet
US7129097B2 (en) 2004-07-29 2006-10-31 International Business Machines Corporation Integrated circuit chip utilizing oriented carbon nanotube conductive layers
GB2422638A (en) * 2005-01-27 2006-08-02 Univ Lancaster A rotational actuator
US7579618B2 (en) 2005-03-02 2009-08-25 Northrop Grumman Corporation Carbon nanotube resonator transistor and method of making same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000009443A1 (en) * 1998-08-14 2000-02-24 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube structures made using catalyst islands
WO2002054505A2 (en) * 2001-01-03 2002-07-11 International Business Machines Corporation System and method for electrically induced breakdown of nanostructures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000009443A1 (en) * 1998-08-14 2000-02-24 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube structures made using catalyst islands
WO2002054505A2 (en) * 2001-01-03 2002-07-11 International Business Machines Corporation System and method for electrically induced breakdown of nanostructures

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Nature, Vol. 393 No. 6680, 7 May 1998 (UK) S J Tans et al. "Room temperature transistor based on single carbon nanomolecule", pages 49 to 52 *
P L McEuen et al. "Nanotube nanoelelectronics" presented 25 to 27 June 2001, Notre Dame, IN, USA at Device Research Conference 2001 Conference Digest (Cat. No.01TH8561), pages 107 to 110 *
Science, Vol. 292 No. 5517, 27 April 2001 (USA) P G Collins et al. "Engineering carbon nanotubes and nanotube circuits using electrical breakdown", pages 706 to 713 *

Also Published As

Publication number Publication date
GB2382718A (en) 2003-06-04
GB0218564D0 (en) 2002-09-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090718