AU2000223245A1 - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- AU2000223245A1 AU2000223245A1 AU2000223245A AU2324500A AU2000223245A1 AU 2000223245 A1 AU2000223245 A1 AU 2000223245A1 AU 2000223245 A AU2000223245 A AU 2000223245A AU 2324500 A AU2324500 A AU 2324500A AU 2000223245 A1 AU2000223245 A1 AU 2000223245A1
- Authority
- AU
- Australia
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2000/000564 WO2001057930A1 (en) | 2000-02-02 | 2000-02-02 | Semiconductor device and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2000223245A1 true AU2000223245A1 (en) | 2001-08-14 |
Family
ID=11735648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2000223245A Abandoned AU2000223245A1 (en) | 2000-02-02 | 2000-02-02 | Semiconductor device and its manufacturing method |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2000223245A1 (en) |
TW (1) | TW454296B (en) |
WO (1) | WO2001057930A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5236676B2 (en) * | 2010-03-18 | 2013-07-17 | ルネサスエレクトロニクス株式会社 | Static random access memory |
US8841675B2 (en) * | 2011-09-23 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Minute transistor |
JP5948037B2 (en) * | 2011-10-13 | 2016-07-06 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP6063117B2 (en) * | 2011-11-11 | 2017-01-18 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP6198403B2 (en) * | 2012-02-29 | 2017-09-20 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP6088852B2 (en) * | 2012-03-01 | 2017-03-01 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor device and semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02246398A (en) * | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH05299435A (en) * | 1991-03-27 | 1993-11-12 | Semiconductor Energy Lab Co Ltd | Manufacture of insulating gate-type fet |
JPH0536624A (en) * | 1991-07-26 | 1993-02-12 | Fujitsu Ltd | Manufacture of semiconductor device and semiconductor device |
JPH0951101A (en) * | 1995-08-07 | 1997-02-18 | Hitachi Ltd | Semiconductor device and its manufacture |
US5773331A (en) * | 1996-12-17 | 1998-06-30 | International Business Machines Corporation | Method for making single and double gate field effect transistors with sidewall source-drain contacts |
JPH11177089A (en) * | 1997-12-16 | 1999-07-02 | Hitachi Ltd | Manufacture of semiconductor device |
-
2000
- 2000-02-02 AU AU2000223245A patent/AU2000223245A1/en not_active Abandoned
- 2000-02-02 WO PCT/JP2000/000564 patent/WO2001057930A1/en active Application Filing
- 2000-02-15 TW TW089102546A patent/TW454296B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2001057930A1 (en) | 2001-08-09 |
TW454296B (en) | 2001-09-11 |
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