ATE552365T1 - Verfahren zur herstellung eines siliciumeinkristalls und verfahren zur herstellung eines siliciumwafers - Google Patents

Verfahren zur herstellung eines siliciumeinkristalls und verfahren zur herstellung eines siliciumwafers

Info

Publication number
ATE552365T1
ATE552365T1 AT10153672T AT10153672T ATE552365T1 AT E552365 T1 ATE552365 T1 AT E552365T1 AT 10153672 T AT10153672 T AT 10153672T AT 10153672 T AT10153672 T AT 10153672T AT E552365 T1 ATE552365 T1 AT E552365T1
Authority
AT
Austria
Prior art keywords
single crystal
crystal
silicon single
silicon
producing
Prior art date
Application number
AT10153672T
Other languages
English (en)
Inventor
Hiroki Murakami
Koji Kato
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Application granted granted Critical
Publication of ATE552365T1 publication Critical patent/ATE552365T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT10153672T 2009-02-27 2010-02-16 Verfahren zur herstellung eines siliciumeinkristalls und verfahren zur herstellung eines siliciumwafers ATE552365T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009046244A JP2010202414A (ja) 2009-02-27 2009-02-27 シリコン単結晶の育成方法及びシリコンウェーハの製造方法

Publications (1)

Publication Number Publication Date
ATE552365T1 true ATE552365T1 (de) 2012-04-15

Family

ID=42167503

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10153672T ATE552365T1 (de) 2009-02-27 2010-02-16 Verfahren zur herstellung eines siliciumeinkristalls und verfahren zur herstellung eines siliciumwafers

Country Status (3)

Country Link
EP (1) EP2226412B1 (de)
JP (1) JP2010202414A (de)
AT (1) ATE552365T1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5201077B2 (ja) * 2009-05-15 2013-06-05 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP5194146B2 (ja) * 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
JP5993550B2 (ja) 2011-03-08 2016-09-14 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
JP2019094224A (ja) * 2017-11-21 2019-06-20 信越半導体株式会社 シリコン単結晶の育成方法
CN113272479A (zh) * 2018-10-12 2021-08-17 环球晶圆股份有限公司 控制硅熔融物中的掺杂剂浓度以增强铸锭质量
CN110257901B (zh) * 2019-07-15 2021-05-28 乐山新天源太阳能科技有限公司 大直径高效n型单晶硅的制备工艺
CN110656371A (zh) * 2019-09-19 2020-01-07 安徽若水化工有限公司 一种太阳能电池用的掺镓铟导热阻燃型单晶硅材料
US11856678B2 (en) 2019-10-29 2023-12-26 Senic Inc. Method of measuring a graphite article, apparatus for a measurement, and ingot growing system
CN215800032U (zh) * 2021-07-06 2022-02-11 隆基绿能科技股份有限公司 一种热屏外胆及热屏、拉晶热场

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4808832B2 (ja) * 2000-03-23 2011-11-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 無欠陥結晶の製造方法
US6547875B1 (en) * 2000-09-25 2003-04-15 Mitsubishi Materials Silicon Corporation Epitaxial wafer and a method for manufacturing the same
JP2003321297A (ja) * 2002-04-25 2003-11-11 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶ウェーハ
KR100766393B1 (ko) * 2003-02-14 2007-10-11 주식회사 사무코 규소 웨이퍼의 제조방법
JPWO2004083496A1 (ja) * 2003-02-25 2006-06-22 株式会社Sumco シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
JP4760729B2 (ja) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
WO2009025340A1 (ja) * 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Also Published As

Publication number Publication date
EP2226412A1 (de) 2010-09-08
JP2010202414A (ja) 2010-09-16
EP2226412B1 (de) 2012-04-04

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