ATE542867T1 - Dispersion, enthaltend ceroxid und kolloidales siliciumoxid - Google Patents

Dispersion, enthaltend ceroxid und kolloidales siliciumoxid

Info

Publication number
ATE542867T1
ATE542867T1 AT07822403T AT07822403T ATE542867T1 AT E542867 T1 ATE542867 T1 AT E542867T1 AT 07822403 T AT07822403 T AT 07822403T AT 07822403 T AT07822403 T AT 07822403T AT E542867 T1 ATE542867 T1 AT E542867T1
Authority
AT
Austria
Prior art keywords
silicon dioxide
cerium oxide
particles
ceroxide
colloidal silicon
Prior art date
Application number
AT07822403T
Other languages
English (en)
Inventor
Michael Kroell
Stefan Heberer
Katharina Dauth
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Application granted granted Critical
Publication of ATE542867T1 publication Critical patent/ATE542867T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
AT07822403T 2007-02-20 2007-11-09 Dispersion, enthaltend ceroxid und kolloidales siliciumoxid ATE542867T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007008232A DE102007008232A1 (de) 2007-02-20 2007-02-20 Dispersion enthaltend Ceroxid und kolloidales Siliciumdioxid
PCT/EP2007/062102 WO2008101553A1 (en) 2007-02-20 2007-11-09 Dispersion comprising cerium oxide and colloidal silicon dioxide

Publications (1)

Publication Number Publication Date
ATE542867T1 true ATE542867T1 (de) 2012-02-15

Family

ID=39149433

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07822403T ATE542867T1 (de) 2007-02-20 2007-11-09 Dispersion, enthaltend ceroxid und kolloidales siliciumoxid

Country Status (9)

Country Link
US (1) US20100102268A1 (de)
EP (1) EP2121860B1 (de)
JP (1) JP5119272B2 (de)
KR (1) KR101097506B1 (de)
CN (1) CN101611110A (de)
AT (1) ATE542867T1 (de)
DE (1) DE102007008232A1 (de)
TW (1) TW200848482A (de)
WO (1) WO2008101553A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007062572A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
DE102008008184A1 (de) * 2008-02-08 2009-08-13 Evonik Degussa Gmbh Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion
CN102802875A (zh) * 2009-06-25 2012-11-28 赢创德固赛有限公司 包含氧化铈和二氧化硅的分散体
JPWO2013099142A1 (ja) * 2011-12-28 2015-04-30 コニカミノルタ株式会社 基板用研磨剤及び基板の製造方法
MY183852A (en) * 2013-11-15 2021-03-17 Hoya Corp Method for manufacturing magnetic-disk glass substrate and method for manufacturing magnetic disk
CN103992743B (zh) * 2014-05-09 2018-06-19 杰明纳微电子股份有限公司 含有二氧化铈粉体与胶体二氧化硅混合磨料的抛光液及其制备工艺
EP3279142B1 (de) 2015-03-31 2021-01-06 JGC Catalysts and Chemicals Ltd. Silicabasierte verbundstofffeinpartikeldispersion, verfahren zur herstellung davon und polierschlamm mit der silicabasierten verbundstofffeinpartikeldispersion
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
JP6985116B2 (ja) * 2017-11-17 2021-12-22 信越化学工業株式会社 合成石英ガラス基板用の研磨剤及び合成石英ガラス基板の研磨方法
WO2020044308A1 (en) * 2018-08-30 2020-03-05 Sabic Global Technologies B.V. High yield stabilized colloidal particle assemblies

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10106988A (ja) * 1996-09-30 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
US5891205A (en) 1997-08-14 1999-04-06 Ekc Technology, Inc. Chemical mechanical polishing composition
JP4113282B2 (ja) * 1998-05-07 2008-07-09 スピードファム株式会社 研磨組成物及びそれを用いたエッジポリッシング方法
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
JP3895949B2 (ja) * 2001-07-18 2007-03-22 株式会社東芝 Ｃｍｐ用スラリー、およびこれを用いた半導体装置の製造方法
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
JP2004079968A (ja) * 2002-08-22 2004-03-11 Toshiba Corp 半導体装置の研磨剤及び研磨剤を用いた半導体装置の製造方法
JP2004200268A (ja) * 2002-12-17 2004-07-15 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4574140B2 (ja) * 2003-08-27 2010-11-04 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いる研磨方法
US7112123B2 (en) * 2004-06-14 2006-09-26 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
US7056192B2 (en) * 2004-09-14 2006-06-06 International Business Machines Corporation Ceria-based polish processes, and ceria-based slurries
JP4451347B2 (ja) 2005-04-26 2010-04-14 花王株式会社 研磨液組成物
JP2006318952A (ja) 2005-05-10 2006-11-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
DE102005038136A1 (de) 2005-08-12 2007-02-15 Degussa Ag Ceroxid-Pulver und Ceroxid-Dispersion
US7553465B2 (en) * 2005-08-12 2009-06-30 Degussa Ag Cerium oxide powder and cerium oxide dispersion

Also Published As

Publication number Publication date
CN101611110A (zh) 2009-12-23
KR101097506B1 (ko) 2011-12-22
TW200848482A (en) 2008-12-16
KR20090122932A (ko) 2009-12-01
JP2010519157A (ja) 2010-06-03
EP2121860A1 (de) 2009-11-25
WO2008101553A1 (en) 2008-08-28
JP5119272B2 (ja) 2013-01-16
US20100102268A1 (en) 2010-04-29
EP2121860B1 (de) 2012-01-25
DE102007008232A1 (de) 2008-08-21

Similar Documents

Publication Publication Date Title
ATE542867T1 (de) Dispersion, enthaltend ceroxid und kolloidales siliciumoxid
WO2010069675A3 (en) Low- surface area fumed silicon dioxide powder
MY157041A (en) Polishing composition
TW200718646A (en) Cerium oxide powder and cerium oxide dispersion
UA100697C2 (uk) Поверхнево модифіковані діоксиди кремнію, одержані пірогенним шляхом
WO2009077412A3 (en) Aqueous slurry comprising inorganic oxygen-containing particulates
JP2014530953A5 (de)
DE502004010359D1 (de) Wässrige klebstoff-dispersionen
CL2008001349A1 (es) Proceso de preparacion de particulas pigmentarias autoligantes, secas o en suspension o dispersion acuosa, particulas pigmentarias autoligantes secas; y suspension acuosa de dichas particulas.
MY187815A (en) Magnetic toner
WO2014022368A3 (en) Anti-reflective hard coat and anti-reflective article
EP2252547A4 (de) Nanopartikelschichten mit grosser oberfläche und ultra-niedrigem brechungsindex sowie nanopartikel
MY171840A (en) Composition for polishing purposes,polishing method using same,and method for producing substrate
DE60315437D1 (de) Nanoskaliges zinkoxid, herstellungs- und verwendungsverfahren
DE602007007232D1 (de) -kern-schale-partikel
DE502005010410D1 (de) Pyrogen hergestellte Siliciumdioxidpulver und Dispersion hiervon
MX361437B (es) Dispersion de oxido metalico.
EA200701107A1 (ru) Твердая фармацевтическая композиция, содержащая валсартан
WO2010059913A3 (en) Preparation of rasagiline and salts thereof
IN2015DN01140A (de)
SG11201805718RA (en) Polishing composition and method for polishing silicon substrate
ATE266602T1 (de) Pyrogen hergestelltes siliciumdioxid
RS52961B (en) COATING COMPOSITION COVERING GRAIN SUBMICRONAL CALCIUM CARBONATE, A PROCEDURE FOR ITS PREPARATION AND USE OF GRAINED SUBMICRONAL CALCIUM CARBONATE IN COATING COMPOSITIONS
IN2014DN06571A (de)
TW200738856A (en) Polishing composition and polishing method