ATE535932T1 - Projektionslinsenanordnung - Google Patents

Projektionslinsenanordnung

Info

Publication number
ATE535932T1
ATE535932T1 AT09733141T AT09733141T ATE535932T1 AT E535932 T1 ATE535932 T1 AT E535932T1 AT 09733141 T AT09733141 T AT 09733141T AT 09733141 T AT09733141 T AT 09733141T AT E535932 T1 ATE535932 T1 AT E535932T1
Authority
AT
Austria
Prior art keywords
sub
beamlets
charged particle
beamlet
beams
Prior art date
Application number
AT09733141T
Other languages
English (en)
Inventor
Jan Wieland
Veen Alexander Van
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE535932T1 publication Critical patent/ATE535932T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electron Beam Exposure (AREA)
AT09733141T 2008-04-15 2009-04-15 Projektionslinsenanordnung ATE535932T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
PCT/EP2009/054467 WO2009127658A1 (en) 2008-04-15 2009-04-15 Projection lens arrangement

Publications (1)

Publication Number Publication Date
ATE535932T1 true ATE535932T1 (de) 2011-12-15

Family

ID=40786929

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09733141T ATE535932T1 (de) 2008-04-15 2009-04-15 Projektionslinsenanordnung

Country Status (7)

Country Link
EP (3) EP2279515B1 (de)
JP (4) JP5268170B2 (de)
KR (4) KR20110015555A (de)
CN (2) CN102067271B (de)
AT (1) ATE535932T1 (de)
TW (3) TWI474360B (de)
WO (2) WO2009127658A1 (de)

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EP2494579B1 (de) * 2009-10-26 2017-08-02 Mapper Lithography IP B.V. Lithografiesystem mit mehreren ladungsträgerteilstrahlen, modulationsvorrichtung und verfahren zu dessen herstellung
JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
WO2012055936A1 (en) 2010-10-26 2012-05-03 Mapper Lithography Ip B.V. Lithography system, modulation device and method of manufacturing a fiber fixation substrate
TWI562183B (en) * 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system
US8604411B2 (en) 2010-11-13 2013-12-10 Mapper Lithography Ip B.V. Charged particle beam modulator
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WO2012143541A1 (en) 2011-04-20 2012-10-26 Mapper Lithography Ip B.V. Arrangement of optical fibers, and a method of forming such arrangement
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US9176397B2 (en) 2011-04-28 2015-11-03 Mapper Lithography Ip B.V. Apparatus for transferring a substrate in a lithography system
WO2012156510A1 (en) 2011-05-18 2012-11-22 Mapper Lithography Ip B.V. Method for splitting a pattern for use in a multi-beamlet lithography apparatus
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP2013016744A (ja) 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
JP6189303B2 (ja) 2011-09-12 2017-08-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． 基板処理装置
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
US9460260B2 (en) 2014-02-21 2016-10-04 Mapper Lithography Ip B.V. Enhanced stitching by overlap dose and feature reduction
JP6262024B2 (ja) * 2014-03-04 2018-01-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
WO2015191107A1 (en) 2014-06-13 2015-12-17 Intel Corporation Ebeam universal cutter
KR102387713B1 (ko) * 2014-06-13 2022-04-19 인텔 코포레이션 즉각적인 e 빔 정렬
US9390891B2 (en) * 2014-08-15 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for charged particle lithography system
TW201618153A (zh) * 2014-09-03 2016-05-16 Nuflare Technology Inc 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法
EP3218926A2 (de) 2014-11-14 2017-09-20 Mapper Lithography IP B.V. Schleusensystem und -verfahren zum transfer von substraten in einem lithographiesystem
JP6482650B2 (ja) * 2015-03-31 2019-03-13 富士フイルム株式会社 パターン形成方法、フォトマスクの製造方法及び電子デバイスの製造方法
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
KR102359084B1 (ko) * 2016-12-23 2022-02-07 에이에스엠엘 네델란즈 비.브이. 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조
US10176965B1 (en) * 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
JP7286630B2 (ja) * 2017-10-02 2023-06-05 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子ビームを用いた装置
CN111819654B (zh) * 2018-03-09 2023-11-14 Asml荷兰有限公司 具有改善的信号电子检测性能的多束检测设备
IL277822B1 (en) 2018-05-01 2024-04-01 Asml Netherlands Bv Multi-beam test rig
EP3624167A1 (de) * 2018-09-14 2020-03-18 FEI Company Bildgebungsvorrichtung mit multi-elektronen-strahl mit verbesserter leistung
US11373838B2 (en) 2018-10-17 2022-06-28 Kla Corporation Multi-beam electron characterization tool with telecentric illumination
WO2020141041A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Systems and methods for real time stereo imaging using multiple electron beams
US10854424B2 (en) * 2019-02-28 2020-12-01 Kabushiki Kaisha Toshiba Multi-electron beam device
TWI773030B (zh) * 2019-12-20 2022-08-01 荷蘭商Ａｓｍｌ荷蘭公司 用於多射束檢測系統之多模操作
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EP4391009A1 (de) * 2022-12-21 2024-06-26 ASML Netherlands B.V. Vorrichtung mit geladenen teilchen und vorrichtung mit geladenen teilchen

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Also Published As

Publication number Publication date
CN102067271A (zh) 2011-05-18
KR20150091417A (ko) 2015-08-10
JP5384759B2 (ja) 2014-01-08
CN102067271B (zh) 2014-05-21
TW201003711A (en) 2010-01-16
JP2013140997A (ja) 2013-07-18
JP5268170B2 (ja) 2013-08-21
JP2011517131A (ja) 2011-05-26
TWI534849B (zh) 2016-05-21
CN102067272A (zh) 2011-05-18
EP2281296A2 (de) 2011-02-09
KR101678823B1 (ko) 2016-11-23
CN102067272B (zh) 2014-04-30
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
JP2013140998A (ja) 2013-07-18
JP2011517130A (ja) 2011-05-26
JP5475155B2 (ja) 2014-04-16
WO2009127659A2 (en) 2009-10-22
KR20150099617A (ko) 2015-08-31
KR101605865B1 (ko) 2016-03-24
EP2279515B1 (de) 2011-11-30
TW201003713A (en) 2010-01-16
KR20110007199A (ko) 2011-01-21
EP2402979A3 (de) 2012-06-27
EP2279515A1 (de) 2011-02-02
TWI474360B (zh) 2015-02-21
EP2402979A2 (de) 2012-01-04
KR20110015555A (ko) 2011-02-16
EP2402979B1 (de) 2013-10-23
KR101638766B1 (ko) 2016-07-13
WO2009127658A1 (en) 2009-10-22

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