ATE534996T1 - Steuerung der wortzeilentransistorstärke zum lesen und schreiben in einem magnetoresistiven stt-ram - Google Patents
Steuerung der wortzeilentransistorstärke zum lesen und schreiben in einem magnetoresistiven stt-ramInfo
- Publication number
- ATE534996T1 ATE534996T1 AT08731574T AT08731574T ATE534996T1 AT E534996 T1 ATE534996 T1 AT E534996T1 AT 08731574 T AT08731574 T AT 08731574T AT 08731574 T AT08731574 T AT 08731574T AT E534996 T1 ATE534996 T1 AT E534996T1
- Authority
- AT
- Austria
- Prior art keywords
- word line
- line transistor
- stt
- write
- magnetorresistive
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89321707P | 2007-03-06 | 2007-03-06 | |
US11/770,839 US7742329B2 (en) | 2007-03-06 | 2007-06-29 | Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory |
PCT/US2008/056086 WO2008109768A1 (en) | 2007-03-06 | 2008-03-06 | Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE534996T1 true ATE534996T1 (de) | 2011-12-15 |
Family
ID=39523385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08731574T ATE534996T1 (de) | 2007-03-06 | 2008-03-06 | Steuerung der wortzeilentransistorstärke zum lesen und schreiben in einem magnetoresistiven stt-ram |
Country Status (12)
Country | Link |
---|---|
US (1) | US7742329B2 (de) |
EP (1) | EP2126922B1 (de) |
JP (3) | JP2010520576A (de) |
KR (1) | KR101093889B1 (de) |
CN (1) | CN101641746B (de) |
AT (1) | ATE534996T1 (de) |
BR (1) | BRPI0808640B1 (de) |
CA (1) | CA2677920C (de) |
ES (1) | ES2375015T3 (de) |
MX (1) | MX2009009488A (de) |
RU (1) | RU2419894C1 (de) |
WO (1) | WO2008109768A1 (de) |
Families Citing this family (56)
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US7826255B2 (en) * | 2008-09-15 | 2010-11-02 | Seagate Technology Llc | Variable write and read methods for resistive random access memory |
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US8107280B2 (en) * | 2008-11-05 | 2012-01-31 | Qualcomm Incorporated | Word line voltage control in STT-MRAM |
US8134856B2 (en) * | 2008-11-05 | 2012-03-13 | Qualcomm Incorporated | Data protection scheme during power-up in spin transfer torque magnetoresistive random access memory |
JP5315940B2 (ja) * | 2008-11-06 | 2013-10-16 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
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US8625339B2 (en) | 2011-04-11 | 2014-01-07 | Grandis, Inc. | Multi-cell per memory-bit circuit and method |
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US8077508B1 (en) * | 2009-08-19 | 2011-12-13 | Grandis, Inc. | Dynamic multistate memory write driver |
US8456926B2 (en) | 2010-11-18 | 2013-06-04 | Grandis, Inc. | Memory write error correction circuit |
US9099181B2 (en) | 2009-08-19 | 2015-08-04 | Grandis, Inc. | Non-volatile static ram cell circuit and timing method |
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US8199553B2 (en) * | 2009-12-17 | 2012-06-12 | Hitachi Global Storage Technologies Netherlands B.V. | Multilevel frequency addressable field driven MRAM |
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US8335101B2 (en) * | 2010-01-21 | 2012-12-18 | Qualcomm Incorporated | Resistance-based memory with reduced voltage input/output device |
US8723557B2 (en) | 2010-06-07 | 2014-05-13 | Grandis, Inc. | Multi-supply symmetric driver circuit and timing method |
EP2405438B1 (de) * | 2010-07-07 | 2016-04-20 | Crocus Technology S.A. | Verfahren zum Schreiben in eine MRAM-basierten Speichervorrichtung mit reduziertem Energieverbrauch |
US8587994B2 (en) * | 2010-09-08 | 2013-11-19 | Qualcomm Incorporated | System and method for shared sensing MRAM |
US8526266B2 (en) * | 2011-01-21 | 2013-09-03 | Qualcomm Incorporated | Row-decoder circuit and method with dual power systems |
KR101312366B1 (ko) * | 2011-04-06 | 2013-09-26 | 에스케이하이닉스 주식회사 | 자기 메모리 장치를 위한 라이트 드라이버 회로 및 자기 메모리 장치 |
WO2013043738A1 (en) | 2011-09-19 | 2013-03-28 | The Regents Of The University Of California | Body voltage sensing based short pulse reading circuit |
KR20130101376A (ko) * | 2012-03-05 | 2013-09-13 | 삼성전자주식회사 | 동적 래치 및 이를 포함하는 데이터 출력 장치 |
US8923041B2 (en) * | 2012-04-11 | 2014-12-30 | Everspin Technologies, Inc. | Self-referenced sense amplifier for spin torque MRAM |
KR20130139066A (ko) | 2012-06-12 | 2013-12-20 | 삼성전자주식회사 | 소스라인 전압 발생기를 포함하는 자기 저항 메모리 장치 |
US9672885B2 (en) | 2012-09-04 | 2017-06-06 | Qualcomm Incorporated | MRAM word line power control scheme |
KR20140067254A (ko) | 2012-11-26 | 2014-06-05 | 삼성전자주식회사 | 메모리 시스템과 이의 동작 방법 |
KR101996265B1 (ko) | 2012-12-14 | 2019-07-04 | 삼성전자주식회사 | 공통소스 반도체 메모리 장치 |
US9064552B2 (en) | 2013-02-27 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Word line driver and related method |
US8792269B1 (en) * | 2013-03-15 | 2014-07-29 | Avalanche Technology, Inc. | Fast programming of magnetic random access memory (MRAM) |
US9691464B2 (en) * | 2013-03-15 | 2017-06-27 | Avalanche Technology, Inc. | Fast programming of magnetic random access memory (MRAM) |
JP6333832B2 (ja) * | 2013-09-20 | 2018-05-30 | 国立大学法人東北大学 | 記憶回路 |
US9196582B2 (en) * | 2013-11-22 | 2015-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Word line coupling prevention using 3D integrated circuit |
KR102212755B1 (ko) | 2014-07-31 | 2021-02-05 | 삼성전자주식회사 | 전압 발생기 및 이를 포함하는 메모리 장치 |
US9734881B2 (en) * | 2015-02-02 | 2017-08-15 | Globalfoundries Singapore Pte. Ltd. | High sensing margin magnetic resistive memory device in which a memory cell read and write select transistors to provide different read and write paths |
US10096361B2 (en) * | 2015-08-13 | 2018-10-09 | Arm Ltd. | Method, system and device for non-volatile memory device operation |
JP6139623B2 (ja) * | 2015-09-15 | 2017-05-31 | 株式会社東芝 | 不揮発性半導体メモリ |
US10127961B2 (en) * | 2015-12-09 | 2018-11-13 | Imec Vzw | Three transistor two junction magnetoresistive random-access memory (MRAM) bit cell |
KR102460468B1 (ko) * | 2015-12-24 | 2022-10-31 | 인텔 코포레이션 | 향상된 터널링 자기저항 비를 갖는 메모리 셀, 이를 포함하는 메모리 디바이스 및 시스템 |
US9786343B1 (en) * | 2016-08-30 | 2017-10-10 | International Business Machines Corporation | STT MRAM common source line array bias scheme |
US10224368B2 (en) * | 2017-06-30 | 2019-03-05 | Qualcomm Incorporated | Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path |
US11501826B2 (en) | 2017-10-17 | 2022-11-15 | R&D3 Llc | Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein |
US12014770B2 (en) | 2017-10-17 | 2024-06-18 | R&D3 Llc | Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein |
US10236053B1 (en) | 2017-10-17 | 2019-03-19 | R&D 3 Llc | Method and circuit device incorporating time-to-transition signal node sensing |
US11165012B2 (en) | 2018-10-29 | 2021-11-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic device and magnetic random access memory |
CN112927736B (zh) * | 2019-12-05 | 2023-12-29 | 上海磁宇信息科技有限公司 | 磁性随机存储器之读写电路 |
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-
2007
- 2007-06-29 US US11/770,839 patent/US7742329B2/en active Active
-
2008
- 2008-03-06 MX MX2009009488A patent/MX2009009488A/es active IP Right Grant
- 2008-03-06 CA CA2677920A patent/CA2677920C/en not_active Expired - Fee Related
- 2008-03-06 WO PCT/US2008/056086 patent/WO2008109768A1/en active Application Filing
- 2008-03-06 BR BRPI0808640-0A patent/BRPI0808640B1/pt not_active IP Right Cessation
- 2008-03-06 KR KR1020097020770A patent/KR101093889B1/ko active IP Right Grant
- 2008-03-06 ES ES08731574T patent/ES2375015T3/es active Active
- 2008-03-06 RU RU2009136705/08A patent/RU2419894C1/ru not_active IP Right Cessation
- 2008-03-06 CN CN2008800070971A patent/CN101641746B/zh active Active
- 2008-03-06 JP JP2009552895A patent/JP2010520576A/ja not_active Withdrawn
- 2008-03-06 EP EP08731574A patent/EP2126922B1/de active Active
- 2008-03-06 AT AT08731574T patent/ATE534996T1/de active
-
2012
- 2012-10-01 JP JP2012219353A patent/JP5951433B2/ja not_active Expired - Fee Related
-
2014
- 2014-09-16 JP JP2014187867A patent/JP2015043251A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
BRPI0808640A8 (pt) | 2019-01-15 |
JP2013048008A (ja) | 2013-03-07 |
BRPI0808640A2 (pt) | 2014-08-05 |
KR101093889B1 (ko) | 2011-12-13 |
WO2008109768A1 (en) | 2008-09-12 |
CA2677920C (en) | 2013-10-01 |
RU2419894C1 (ru) | 2011-05-27 |
JP5951433B2 (ja) | 2016-07-13 |
ES2375015T3 (es) | 2012-02-24 |
CN101641746A (zh) | 2010-02-03 |
CN101641746B (zh) | 2012-09-19 |
JP2015043251A (ja) | 2015-03-05 |
MX2009009488A (es) | 2009-09-16 |
BRPI0808640B1 (pt) | 2020-01-07 |
EP2126922A1 (de) | 2009-12-02 |
KR20090119924A (ko) | 2009-11-20 |
US20080219043A1 (en) | 2008-09-11 |
EP2126922B1 (de) | 2011-11-23 |
JP2010520576A (ja) | 2010-06-10 |
CA2677920A1 (en) | 2008-09-12 |
US7742329B2 (en) | 2010-06-22 |
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