ATE526691T1 - Elektronische vorrichtungen - Google Patents
Elektronische vorrichtungenInfo
- Publication number
- ATE526691T1 ATE526691T1 AT06743881T AT06743881T ATE526691T1 AT E526691 T1 ATE526691 T1 AT E526691T1 AT 06743881 T AT06743881 T AT 06743881T AT 06743881 T AT06743881 T AT 06743881T AT E526691 T1 ATE526691 T1 AT E526691T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- areas
- charge carriers
- insulative features
- mobile charge
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 8
- 239000002800 charge carrier Substances 0.000 abstract 4
- 230000001419 dependent effect Effects 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/23—Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0509410A GB0509410D0 (en) | 2005-05-09 | 2005-05-09 | Low-mobility electronics devices |
GB0509411A GB0509411D0 (en) | 2005-05-09 | 2005-05-09 | Nondestructive photolithography of conducting polymer structures |
PCT/GB2006/001667 WO2006120414A2 (en) | 2005-05-09 | 2006-05-09 | Electronic devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE526691T1 true ATE526691T1 (de) | 2011-10-15 |
Family
ID=36847854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06743881T ATE526691T1 (de) | 2005-05-09 | 2006-05-09 | Elektronische vorrichtungen |
Country Status (6)
Country | Link |
---|---|
US (2) | US8624216B2 (de) |
EP (2) | EP1880430B1 (de) |
JP (2) | JP2008544477A (de) |
KR (2) | KR101317695B1 (de) |
AT (1) | ATE526691T1 (de) |
WO (1) | WO2006120414A2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007058369A1 (de) | 2007-12-03 | 2009-06-04 | Voith Patent Gmbh | Gewebeband für eine Maschine zur Herstellung von Bahnmaterial, insbesondere Papier oder Karton |
JP2008235429A (ja) * | 2007-03-19 | 2008-10-02 | Ricoh Co Ltd | 機能性有機薄膜とその製造方法 |
JP5176414B2 (ja) * | 2007-07-11 | 2013-04-03 | 株式会社リコー | 有機トランジスタアレイ及び表示装置 |
JP5333221B2 (ja) * | 2007-09-07 | 2013-11-06 | 日本電気株式会社 | カーボンナノチューブ構造物及び薄膜トランジスタ |
GB2462693B (en) * | 2008-07-31 | 2013-06-19 | Pragmatic Printing Ltd | Forming electrically insulative regions |
GB2467316B (en) | 2009-01-28 | 2014-04-09 | Pragmatic Printing Ltd | Electronic devices, circuits and their manufacture |
GB2473200B (en) | 2009-09-02 | 2014-03-05 | Pragmatic Printing Ltd | Structures comprising planar electronic devices |
GB2475561A (en) | 2009-11-24 | 2011-05-25 | Nano Eprint Ltd | Planar electronic devices |
US20120305892A1 (en) * | 2010-12-08 | 2012-12-06 | Martin Thornton | Electronic device, method of manufacturing a device and apparatus for manufacturing a device |
US8637186B2 (en) * | 2011-08-24 | 2014-01-28 | Gwangju Institute Of Science And Technology | Electrode for battery and method for manufacturing thereof |
FR2980913B1 (fr) * | 2011-09-30 | 2014-04-18 | Commissariat Energie Atomique | Procede de structuration d'une couche active organique deposee sur un substrat |
GB2532895B (en) | 2012-02-21 | 2016-07-13 | Pragmatic Printing Ltd | Substantially planar electronic devices and circuits |
CN103346406B (zh) * | 2013-05-20 | 2015-04-29 | 电子科技大学 | 基于高电子迁移率晶体管太赫兹波空间外部调制器 |
US9305807B2 (en) * | 2014-02-27 | 2016-04-05 | Palo Alto Research Center Incorporated | Fabrication method for microelectronic components and microchip inks used in electrostatic assembly |
AU2014392589B2 (en) * | 2014-05-01 | 2019-10-17 | Perkinelmer U.S. Llc | Systems and methods for detection and quantification of selenium and silicon in samples |
WO2015191897A1 (en) * | 2014-06-11 | 2015-12-17 | Georgia Tech Research Corporation | Polymer-based nanostructured materials with tunable properties and methods of making thereof |
JP6309882B2 (ja) * | 2014-11-21 | 2018-04-11 | 日本電信電話株式会社 | インプレーンダブルゲートトランジスタ |
FR3030886B1 (fr) * | 2014-12-22 | 2017-03-10 | Centre Nat Rech Scient | Dispositif de modulation comportant une nano-diode |
CN108598258B (zh) * | 2018-04-27 | 2021-11-09 | 华南师范大学 | 一种具有静态负微分电阻特性的太赫兹器件 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5385865A (en) * | 1990-04-26 | 1995-01-31 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften | Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface |
JPH0430345U (de) | 1990-07-05 | 1992-03-11 | ||
US5821563A (en) * | 1990-12-25 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device free from reverse leakage and throw leakage |
JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
KR19990075338A (ko) * | 1998-03-19 | 1999-10-15 | 윤종용 | 수도모픽 고 전자 이동도 트랜지스터의 t-게이트 제조 방법 |
GB9914489D0 (en) * | 1999-06-21 | 1999-08-25 | Univ Cambridge Tech | Transistors |
US6500604B1 (en) * | 2000-01-03 | 2002-12-31 | International Business Machines Corporation | Method for patterning sensitive organic thin films |
JP2002215065A (ja) * | 2000-11-02 | 2002-07-31 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器 |
GB0109782D0 (en) * | 2001-04-20 | 2001-06-13 | Btg Int Ltd | Nanoelectronic devices and circuits |
AU2002364157A1 (en) * | 2001-12-12 | 2003-06-23 | The Pennsylvania State University | Chemical reactor templates: sacrificial layer fabrication and template use |
JP4044362B2 (ja) * | 2002-04-24 | 2008-02-06 | 大日本印刷株式会社 | 有機el素子の製造方法 |
US6661024B1 (en) * | 2002-07-02 | 2003-12-09 | Motorola, Inc. | Integrated circuit including field effect transistor and method of manufacture |
JP4429584B2 (ja) * | 2002-11-07 | 2010-03-10 | 旭化成株式会社 | 縦型の電界効果トランジスタ |
US6872588B2 (en) | 2002-11-22 | 2005-03-29 | Palo Alto Research Center Inc. | Method of fabrication of electronic devices using microfluidic channels |
US7759719B2 (en) * | 2004-07-01 | 2010-07-20 | Chih-Hsin Wang | Electrically alterable memory cell |
GB0315477D0 (en) * | 2003-07-02 | 2003-08-06 | Plastic Logic Ltd | Rectifying diodes |
JP4997688B2 (ja) * | 2003-08-19 | 2012-08-08 | セイコーエプソン株式会社 | 電極、薄膜トランジスタ、電子回路、表示装置および電子機器 |
JP2005079225A (ja) * | 2003-08-29 | 2005-03-24 | Institute Of Physical & Chemical Research | 有機材料パターンの形成方法及び薄膜トランジスタの製造方法 |
GB0415995D0 (en) | 2004-07-16 | 2004-08-18 | Song Aimin | Memory array |
WO2007001337A2 (en) * | 2004-08-18 | 2007-01-04 | Dow Corning Corporation | Coated substrates and methods for their preparation |
JP2008522489A (ja) * | 2004-11-19 | 2008-06-26 | センサーマティック・エレクトロニクス・コーポレーション | 後方散乱無線周波識別リーダーによる交信のための技術とハードウェア |
US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
WO2007023526A1 (ja) * | 2005-08-23 | 2007-03-01 | Fujitsu Hitachi Plasma Display Limited | プラズマディスプレイ装置 |
-
2006
- 2006-05-09 KR KR1020077028880A patent/KR101317695B1/ko active IP Right Grant
- 2006-05-09 AT AT06743881T patent/ATE526691T1/de not_active IP Right Cessation
- 2006-05-09 EP EP06743881A patent/EP1880430B1/de active Active
- 2006-05-09 JP JP2008510630A patent/JP2008544477A/ja active Pending
- 2006-05-09 WO PCT/GB2006/001667 patent/WO2006120414A2/en active Application Filing
- 2006-05-09 US US11/920,080 patent/US8624216B2/en active Active
- 2006-05-09 KR KR1020137005239A patent/KR101381405B1/ko active IP Right Grant
- 2006-05-09 EP EP10183783.9A patent/EP2264803B1/de active Active
-
2012
- 2012-11-15 JP JP2012251693A patent/JP2013034028A/ja active Pending
-
2013
- 2013-12-20 US US14/135,871 patent/US9076851B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP1880430A2 (de) | 2008-01-23 |
EP2264803A3 (de) | 2014-02-26 |
US9076851B2 (en) | 2015-07-07 |
US8624216B2 (en) | 2014-01-07 |
KR20080031674A (ko) | 2008-04-10 |
EP2264803B1 (de) | 2019-01-30 |
EP2264803A2 (de) | 2010-12-22 |
EP1880430B1 (de) | 2011-09-28 |
WO2006120414A2 (en) | 2006-11-16 |
US20140110668A1 (en) | 2014-04-24 |
KR101381405B1 (ko) | 2014-04-02 |
KR20130036366A (ko) | 2013-04-11 |
WO2006120414A3 (en) | 2007-05-03 |
JP2013034028A (ja) | 2013-02-14 |
KR101317695B1 (ko) | 2013-10-15 |
US20090315017A1 (en) | 2009-12-24 |
JP2008544477A (ja) | 2008-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |