ATE515084T1 - Verfahren zur herstellung eines oberflächenemissionslasers, verfahren zur herstellung eines oberflächenemissionslaserarrays,oberflächenemis ionslaser, oberflächenemissionslaserarray und optische vorrichtung mit dem oberflächenemissionslaserarray - Google Patents

Verfahren zur herstellung eines oberflächenemissionslasers, verfahren zur herstellung eines oberflächenemissionslaserarrays,oberflächenemis ionslaser, oberflächenemissionslaserarray und optische vorrichtung mit dem oberflächenemissionslaserarray

Info

Publication number
ATE515084T1
ATE515084T1 AT09009750T AT09009750T ATE515084T1 AT E515084 T1 ATE515084 T1 AT E515084T1 AT 09009750 T AT09009750 T AT 09009750T AT 09009750 T AT09009750 T AT 09009750T AT E515084 T1 ATE515084 T1 AT E515084T1
Authority
AT
Austria
Prior art keywords
emission laser
surface emission
laser array
producing
forming
Prior art date
Application number
AT09009750T
Other languages
English (en)
Inventor
Mitsuhiro Ikuta
Yasuhisa Inao
Takako Yamaguchi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE515084T1 publication Critical patent/ATE515084T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
AT09009750T 2008-07-31 2009-07-28 Verfahren zur herstellung eines oberflächenemissionslasers, verfahren zur herstellung eines oberflächenemissionslaserarrays,oberflächenemis ionslaser, oberflächenemissionslaserarray und optische vorrichtung mit dem oberflächenemissionslaserarray ATE515084T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008198951A JP4639249B2 (ja) 2008-07-31 2008-07-31 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器

Publications (1)

Publication Number Publication Date
ATE515084T1 true ATE515084T1 (de) 2011-07-15

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AT09009750T ATE515084T1 (de) 2008-07-31 2009-07-28 Verfahren zur herstellung eines oberflächenemissionslasers, verfahren zur herstellung eines oberflächenemissionslaserarrays,oberflächenemis ionslaser, oberflächenemissionslaserarray und optische vorrichtung mit dem oberflächenemissionslaserarray

Country Status (5)

Country Link
US (2) US7863061B2 (de)
EP (1) EP2149945B1 (de)
JP (1) JP4639249B2 (de)
CN (2) CN102208752B (de)
AT (1) ATE515084T1 (de)

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Also Published As

Publication number Publication date
JP4639249B2 (ja) 2011-02-23
US20100029027A1 (en) 2010-02-04
CN101640376B (zh) 2011-10-12
US20110076058A1 (en) 2011-03-31
EP2149945B1 (de) 2011-06-29
CN102208752A (zh) 2011-10-05
EP2149945A1 (de) 2010-02-03
CN101640376A (zh) 2010-02-03
JP2010040600A (ja) 2010-02-18
CN102208752B (zh) 2013-06-12
US8068529B2 (en) 2011-11-29
US7863061B2 (en) 2011-01-04

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