ATE474332T1 - Lichtemittierende mesastrukturen mit hohem höhe- zu-breite-verhältnis und quasi-parabolischen seitenwänden und ihre herstellung - Google Patents

Lichtemittierende mesastrukturen mit hohem höhe- zu-breite-verhältnis und quasi-parabolischen seitenwänden und ihre herstellung

Info

Publication number
ATE474332T1
ATE474332T1 AT04731090T AT04731090T ATE474332T1 AT E474332 T1 ATE474332 T1 AT E474332T1 AT 04731090 T AT04731090 T AT 04731090T AT 04731090 T AT04731090 T AT 04731090T AT E474332 T1 ATE474332 T1 AT E474332T1
Authority
AT
Austria
Prior art keywords
mesa
light
micro
contact
leds
Prior art date
Application number
AT04731090T
Other languages
English (en)
Inventor
Pleun Maaskant
Edmund O'carroll
Paul Lambkin
Brian Corbett
Original Assignee
Univ College Cork Nat Univ Ie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ College Cork Nat Univ Ie filed Critical Univ College Cork Nat Univ Ie
Application granted granted Critical
Publication of ATE474332T1 publication Critical patent/ATE474332T1/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
AT04731090T 2003-05-02 2004-05-04 Lichtemittierende mesastrukturen mit hohem höhe- zu-breite-verhältnis und quasi-parabolischen seitenwänden und ihre herstellung ATE474332T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IE20030332 2003-05-02
PCT/IE2004/000063 WO2004097947A2 (en) 2003-05-02 2004-05-04 Light emitting diodes and the manufacture thereof

Publications (1)

Publication Number Publication Date
ATE474332T1 true ATE474332T1 (de) 2010-07-15

Family

ID=33397630

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04731090T ATE474332T1 (de) 2003-05-02 2004-05-04 Lichtemittierende mesastrukturen mit hohem höhe- zu-breite-verhältnis und quasi-parabolischen seitenwänden und ihre herstellung

Country Status (7)

Country Link
US (1) US7518149B2 (de)
EP (1) EP1620902B1 (de)
JP (1) JP2006525669A (de)
AT (1) ATE474332T1 (de)
DE (1) DE602004028115D1 (de)
IE (1) IE20040308A1 (de)
WO (1) WO2004097947A2 (de)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7819550B2 (en) 2003-10-31 2010-10-26 Phoseon Technology, Inc. Collection optics for led array with offset hemispherical or faceted surfaces
US7638808B2 (en) 2004-03-18 2009-12-29 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density LED array
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
JP4896788B2 (ja) * 2007-03-28 2012-03-14 富士通株式会社 半導体発光素子およびその製造方法
US20130064834A1 (en) 2008-12-15 2013-03-14 Regeneron Pharmaceuticals, Inc. Methods for treating hypercholesterolemia using antibodies to pcsk9
JP2012114377A (ja) * 2010-11-26 2012-06-14 Mitsubishi Chemicals Corp 半導体発光素子
BR112014005522A2 (pt) 2011-09-16 2017-03-21 Regeneron Pharma métodos para redução dos níveis de lipoproteína(a) pela administração de um inibidor da proproteína subtilisina quexina-9 convertase (pcsk9)
GB201202222D0 (en) * 2012-02-09 2012-03-28 Mled Ltd Enhanced light extraction
US9472594B2 (en) 2012-02-10 2016-10-18 Oculus Vr, Llc Light emitting diode chip
US9515238B2 (en) 2012-02-16 2016-12-06 Oculus Vr, Llc Micro-LED array with filters
US9134724B2 (en) * 2012-06-12 2015-09-15 Apple Inc. Method and apparatus for component assembly using continuous selection
GB201215632D0 (en) 2012-09-03 2012-10-17 Infiniled Ltd Optical device
DE102012217967A1 (de) 2012-10-01 2014-04-03 Carl Zeiss Microscopy Gmbh Konfokales Mikroskop mit frei einstellbarer Probenabtastung
US9279947B2 (en) * 2012-11-15 2016-03-08 4233999 Canada Inc. Methods and apparatus for high speed short distance optical communications using micro light emitting diodes
DE102014009677A1 (de) * 2014-02-19 2015-08-20 Pierre-Alain Cotte Anzeigevorrichtung mit verbessertem Kontrast
GB2526078A (en) * 2014-05-07 2015-11-18 Infiniled Ltd Methods and apparatus for improving micro-LED devices
DE102014212371A1 (de) 2014-06-26 2015-12-31 Carl Zeiss Meditec Ag Beleuchtungsvorrichtung für ein optisches Beobachtungsgerät
GB201413578D0 (en) 2014-07-31 2014-09-17 Infiniled Ltd A colour iled display on silicon
GB201413604D0 (en) * 2014-07-31 2014-09-17 Infiniled Ltd A colour inorganic LED display for display devices with a high number of pixel
GB201418810D0 (en) 2014-10-22 2014-12-03 Infiniled Ltd Display
GB201420860D0 (en) 2014-11-24 2015-01-07 Infiniled Ltd Micro-LED device
TWI610459B (zh) 2015-05-13 2018-01-01 友達光電股份有限公司 微型發光二極體裝置與其製造方法
GB2541970B (en) 2015-09-02 2020-08-19 Facebook Tech Llc Display manufacture
US10440355B2 (en) 2015-11-06 2019-10-08 Facebook Technologies, Llc Depth mapping with a head mounted display using stereo cameras and structured light
GB2544335A (en) 2015-11-13 2017-05-17 Oculus Vr Llc A method and apparatus for use in the manufacture of a display element
WO2017175148A1 (en) 2016-04-08 2017-10-12 Novagan Highly directional light source with high extraction efficiency and method to manufacturing the same
DE102016107211A1 (de) * 2016-04-19 2017-10-19 Voith Patent Gmbh Vorrichtung zur daten- und/oder signalübertragung
WO2018107150A1 (en) 2016-12-09 2018-06-14 Applied Materials, Inc. Collimated led light field display
WO2018200417A1 (en) 2017-04-24 2018-11-01 Pcms Holdings, Inc. Systems and methods for 3d displays with flexible optical layers
US10490599B2 (en) 2017-07-13 2019-11-26 Applied Materials, Inc. Collimated, directional micro-LED light field display
US10535800B1 (en) * 2017-08-08 2020-01-14 Facebook Technologies, Llc Parabolic vertical hybrid light emitting diode
EP4030753A1 (de) 2017-08-23 2022-07-20 InterDigital Madison Patent Holdings, SAS Verfahren für lichtfeldbild-engine und vorrichtung zur erzeugung von projizierten 3d-lichtfeldern
US10712579B1 (en) * 2017-09-20 2020-07-14 Facebook Technologies, Llc Vortex linearization of micro-LED polarization
US10020422B1 (en) 2017-09-29 2018-07-10 Oculus Vr, Llc Mesa shaped micro light emitting diode with bottom N-contact
US11624934B2 (en) 2017-11-02 2023-04-11 Interdigital Madison Patent Holdings, Sas Method and system for aperture expansion in light field displays
US10574354B2 (en) * 2017-12-12 2020-02-25 International Business Machines Corporation Data transfer arrangement for a hybrid integrated circuit (HIC) and an HIC with the data transfer arrangement
US10325791B1 (en) 2017-12-13 2019-06-18 Facebook Technologies, Llc Formation of elastomeric layer on selective regions of light emitting device
US10418510B1 (en) 2017-12-22 2019-09-17 Facebook Technologies, Llc Mesa shaped micro light emitting diode with electroless plated N-contact
JP7079106B2 (ja) * 2018-01-24 2022-06-01 シャープ株式会社 画像表示素子、及び画像表示素子の製造方法
US10326052B1 (en) * 2018-02-12 2019-06-18 Facebook Technologies, Llc Light emitting diode with field enhanced contact
US10644196B2 (en) 2018-03-30 2020-05-05 Facebook Technologies, Llc Reduction of surface recombination losses in micro-LEDs
US20190305188A1 (en) * 2018-03-30 2019-10-03 Facebook Technologies, Llc Reduction of surface recombination losses in micro-leds
US10468552B2 (en) 2018-03-30 2019-11-05 Facebook Technologies, Llc High-efficiency micro-LEDs
US10622519B2 (en) 2018-03-30 2020-04-14 Facebook Technologies, Llc Reduction of surface recombination losses in micro-LEDs
US10483430B1 (en) 2018-05-01 2019-11-19 Facebook Technologies, Llc Micron-sized light emitting diode designs
US10753959B1 (en) * 2018-05-04 2020-08-25 Facebook Technologies, Llc Microspring probe card with insulation block
US11184967B2 (en) 2018-05-07 2021-11-23 Zane Coleman Angularly varying light emitting device with an imager
US10816939B1 (en) 2018-05-07 2020-10-27 Zane Coleman Method of illuminating an environment using an angularly varying light emitting device and an imager
WO2019221993A1 (en) 2018-05-17 2019-11-21 Pcms Holdings, Inc. 3d display directional backlight based on diffractive elements
GB2575311B (en) * 2018-07-06 2021-03-03 Plessey Semiconductors Ltd Monolithic LED array and a precursor thereto
US11005014B2 (en) 2018-07-30 2021-05-11 Facebook Technologies, Llc Optics formation using pick-up tools
US11056611B2 (en) 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing
US11257982B1 (en) * 2018-10-18 2022-02-22 Facebook Technologies, Llc Semiconductor display device
US11227970B1 (en) 2018-10-18 2022-01-18 Facebook Technologies, Llc Light emitting diodes manufacture and assembly
US11164905B2 (en) 2018-10-18 2021-11-02 Facebook Technologies, Llc Manufacture of semiconductor display device
EP3667721A1 (de) 2018-12-10 2020-06-17 IMEC vzw Verfahren zur herstellung einer optischen vorrichtung
CN113557463A (zh) 2019-03-08 2021-10-26 Pcms控股公司 用于基于具有扩展焦深的光束的显示器的光学方法和***
WO2020210361A1 (en) 2019-04-12 2020-10-15 Pcms Holdings, Inc. Optical method and system for light field displays having light-steering layers and periodic optical layer
CN114175627B (zh) 2019-06-07 2024-04-12 交互数字Vc控股公司 用于基于分布式光孔的光场显示器的光学方法和***
WO2020263958A1 (en) 2019-06-28 2020-12-30 Pcms Holdings, Inc. Optical method and system for light field (lf) displays based on tunable liquid crystal (lc) diffusers
US11309464B2 (en) 2019-10-14 2022-04-19 Facebook Technologies, Llc Micro-LED design for chief ray walk-off compensation
WO2021076424A1 (en) 2019-10-15 2021-04-22 Pcms Holdings, Inc. Method for projecting an expanded virtual image with a small light field display
WO2021086935A1 (en) * 2019-10-28 2021-05-06 The Regents Of The University Of California Formation of microled mesa structures with atomic layer deposition passivated sidewalls, a self-aligned dielectric via to the top electrical contact, and a plasma-damage-free top contact
US11127881B2 (en) 2019-11-22 2021-09-21 Tectus Corporation Ultra-dense array of LEDs with half cavities and reflective sidewalls
US11476387B2 (en) 2019-11-22 2022-10-18 Tectus Corporation Ultra-dense array of LEDs with half cavities and reflective sidewalls, and hybrid bonding methods
US11289630B2 (en) 2019-12-20 2022-03-29 Lumileds Llc Tunable lighting system with preferred color rendering
WO2021148895A1 (en) 2020-01-22 2021-07-29 King Abdullah University Of Science And Technology Light processing device array and method for manufacturing thereof
TW202137582A (zh) * 2020-03-24 2021-10-01 晶元光電股份有限公司 半導體發光元件及半導體發光組件
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
GB2595687B (en) 2020-06-03 2023-05-24 Plessey Semiconductors Ltd Monolithic LED array and a precursor thereto
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
EP4174965A4 (de) * 2020-09-29 2023-09-06 BOE Technology Group Co., Ltd. Leuchtdiodenchip, anzeigesubstrat und herstellungsverfahren dafür
DE102021101657A1 (de) 2021-01-26 2022-07-28 Infineon Technologies Ag Verfahren zur Herstellung eines hybriden Bauelements
CN114284419B (zh) * 2021-12-20 2024-03-12 镭昱光电科技(苏州)有限公司 微型发光二极管显示装置及其制作方法
CN116153962B (zh) * 2023-04-17 2023-07-21 诺视科技(苏州)有限公司 像素单元及其制作方法、微显示屏、像素级分立器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0503729A3 (en) * 1991-03-15 1992-12-02 N.V. Philips' Gloeilampenfabrieken Optoelectronic semiconductor device and method of manufacturing such a device
JPH08195505A (ja) * 1995-01-17 1996-07-30 Toshiba Corp 半導体発光素子及びその製造方法
JPH1065201A (ja) * 1996-06-13 1998-03-06 Furukawa Electric Co Ltd:The 半導体導波路型受光素子とその製造方法
DE19727233A1 (de) * 1997-06-26 1999-01-07 Siemens Ag Strahlungsemittierendes optoelektronisches Bauelement
US6180444B1 (en) * 1998-02-18 2001-01-30 International Business Machines Corporation Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
WO2001073859A1 (en) * 2000-03-24 2001-10-04 Nova Crystals, Inc. Enhanced-output light emitting diode and method of making the same
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
US6998281B2 (en) * 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
WO2002059983A1 (en) * 2000-11-17 2002-08-01 Emcore Corporation Led package having improved light extraction and methods therefor
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
US7482634B2 (en) * 2004-09-24 2009-01-27 Lockheed Martin Corporation Monolithic array for solid state ultraviolet light emitters

Also Published As

Publication number Publication date
DE602004028115D1 (de) 2010-08-26
IE20040308A1 (en) 2004-11-17
US7518149B2 (en) 2009-04-14
WO2004097947A3 (en) 2005-06-02
US20060113638A1 (en) 2006-06-01
JP2006525669A (ja) 2006-11-09
EP1620902B1 (de) 2010-07-14
EP1620902A2 (de) 2006-02-01
WO2004097947A2 (en) 2004-11-11

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