ATE434192T1 - Dünnfilm-magnetfeldsensor - Google Patents

Dünnfilm-magnetfeldsensor

Info

Publication number
ATE434192T1
ATE434192T1 AT01978911T AT01978911T ATE434192T1 AT E434192 T1 ATE434192 T1 AT E434192T1 AT 01978911 T AT01978911 T AT 01978911T AT 01978911 T AT01978911 T AT 01978911T AT E434192 T1 ATE434192 T1 AT E434192T1
Authority
AT
Austria
Prior art keywords
magnetic field
thin
film
field sensor
bridge circuit
Prior art date
Application number
AT01978911T
Other languages
English (en)
Inventor
Nobukiyo Kobayashi
Takeshi Yano
Shigehiro Ohnuma
Kiwamu Shirakawa
Tsuyoshi Masumoto
Original Assignee
Foundation The Res Inst Of Ele
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000367822A external-priority patent/JP4023997B2/ja
Priority claimed from JP2001316084A external-priority patent/JP2003078187A/ja
Priority claimed from JP2001315935A external-priority patent/JP4204775B2/ja
Application filed by Foundation The Res Inst Of Ele filed Critical Foundation The Res Inst Of Ele
Application granted granted Critical
Publication of ATE434192T1 publication Critical patent/ATE434192T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y10T428/1129—Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Fluid Pressure (AREA)
AT01978911T 2000-10-26 2001-10-25 Dünnfilm-magnetfeldsensor ATE434192T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000367822A JP4023997B2 (ja) 2000-10-26 2000-10-26 薄膜磁界センサ
JP2001316084A JP2003078187A (ja) 2001-09-05 2001-09-05 磁界センサ
JP2001315935A JP4204775B2 (ja) 2001-10-12 2001-10-12 薄膜磁界センサ
PCT/JP2001/009385 WO2002037131A1 (fr) 2000-10-26 2001-10-25 Capteur de champ magnetique a couche mince

Publications (1)

Publication Number Publication Date
ATE434192T1 true ATE434192T1 (de) 2009-07-15

Family

ID=27345351

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01978911T ATE434192T1 (de) 2000-10-26 2001-10-25 Dünnfilm-magnetfeldsensor

Country Status (8)

Country Link
US (1) US6642714B2 (de)
EP (1) EP1329735B1 (de)
KR (1) KR100687513B1 (de)
CN (1) CN100403048C (de)
AT (1) ATE434192T1 (de)
DE (1) DE60139017D1 (de)
TW (1) TW550394B (de)
WO (1) WO2002037131A1 (de)

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CN103383441B (zh) * 2013-05-10 2016-05-11 安徽大学 一种数字式自旋阀磁场传感器及其制备技术
CN103424719B (zh) * 2013-07-10 2015-09-09 中北大学 一种基于纳米磁颗粒的磁矢量敏感元件及其制造方法
CN103901363B (zh) * 2013-09-10 2017-03-15 江苏多维科技有限公司 一种单芯片z轴线性磁电阻传感器
CN107037381A (zh) * 2015-12-29 2017-08-11 爱盛科技股份有限公司 磁场感测装置及其感测方法
JP6583208B2 (ja) * 2016-10-14 2019-10-02 株式会社デンソー 磁気検出素子
JP6438930B2 (ja) * 2016-12-06 2018-12-19 Tdk株式会社 磁場検出装置
JP2018096895A (ja) 2016-12-15 2018-06-21 Tdk株式会社 磁場検出装置
CN106885997B (zh) * 2017-02-20 2019-10-01 上海微小卫星工程中心 地磁场中进行星载磁强计干扰补偿的方法
JP6913617B2 (ja) * 2017-12-01 2021-08-04 昭和電工株式会社 磁気センサ、計測装置及び磁気センサの製造方法
CN110780243A (zh) * 2019-11-19 2020-02-11 中国电子科技集团公司第四十九研究所 用于水下导航的高灵敏度微型磁传感单元、含有该传感单元的传感器及传感单元的制备方法
JP2021103145A (ja) * 2019-12-25 2021-07-15 昭和電工株式会社 磁気センサ
JP2023119633A (ja) * 2022-02-17 2023-08-29 Tdk株式会社 磁気センサ
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Also Published As

Publication number Publication date
CN100403048C (zh) 2008-07-16
CN1394284A (zh) 2003-01-29
US6642714B2 (en) 2003-11-04
EP1329735B1 (de) 2009-06-17
KR100687513B1 (ko) 2007-02-27
DE60139017D1 (de) 2009-07-30
US20030042902A1 (en) 2003-03-06
WO2002037131A1 (fr) 2002-05-10
EP1329735A1 (de) 2003-07-23
KR20020089317A (ko) 2002-11-29
EP1329735A4 (de) 2005-05-11
TW550394B (en) 2003-09-01

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