ATE431619T1 - Verfahren zur herstellung eines optischen projektionssystems - Google Patents
Verfahren zur herstellung eines optischen projektionssystemsInfo
- Publication number
- ATE431619T1 ATE431619T1 AT00900129T AT00900129T ATE431619T1 AT E431619 T1 ATE431619 T1 AT E431619T1 AT 00900129 T AT00900129 T AT 00900129T AT 00900129 T AT00900129 T AT 00900129T AT E431619 T1 ATE431619 T1 AT E431619T1
- Authority
- AT
- Austria
- Prior art keywords
- optical
- birefringence
- projection
- optical system
- axis
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 13
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000009826 distribution Methods 0.000 abstract 2
- 238000003384 imaging method Methods 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009828 non-uniform distribution Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
- G02B13/26—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances for reproducing with unit magnification
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Optics & Photonics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Medicines Containing Plant Substances (AREA)
- Steroid Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP141699 | 1999-01-06 | ||
PCT/JP2000/000027 WO2000041226A1 (fr) | 1999-01-06 | 2000-01-06 | Systeme optique de projection, procede de fabrication associe et appareil d'exposition par projection utilisant ce systeme |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE431619T1 true ATE431619T1 (de) | 2009-05-15 |
Family
ID=11500877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00900129T ATE431619T1 (de) | 1999-01-06 | 2000-01-06 | Verfahren zur herstellung eines optischen projektionssystems |
Country Status (9)
Country | Link |
---|---|
US (2) | US6366404B1 (de) |
EP (1) | EP1063684B1 (de) |
JP (1) | JP4207389B2 (de) |
KR (1) | KR20010088279A (de) |
CN (1) | CN1293822A (de) |
AT (1) | ATE431619T1 (de) |
AU (1) | AU1891200A (de) |
DE (1) | DE60042186D1 (de) |
WO (1) | WO2000041226A1 (de) |
Families Citing this family (59)
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JP4207389B2 (ja) * | 1999-01-06 | 2009-01-14 | 株式会社ニコン | 投影光学系、その製造方法、及びそれを用いた投影露光装置 |
WO2001002311A1 (fr) * | 1999-07-05 | 2001-01-11 | Nikon Corporation | Procede de production d'un element de verre de quartz, et element en verre de quartz ainsi produit |
EP1134197B1 (de) | 1999-08-12 | 2014-05-07 | Nikon Corporation | Verfahren zur herstellung von synthetischem, glasförmigem siliciumdioxid |
US6710930B2 (en) | 1999-12-01 | 2004-03-23 | Nikon Corporation | Illumination optical system and method of making exposure apparatus |
DE10028434B4 (de) * | 2000-06-14 | 2005-09-29 | Ludwig Felser | Stahlbausystem |
KR100857931B1 (ko) * | 2000-10-10 | 2008-09-09 | 가부시키가이샤 니콘 | 결상성능의 평가방법 |
JP2004526331A (ja) * | 2001-05-15 | 2004-08-26 | カール・ツアイス・エスエムテイ・アーゲー | フッ化物結晶レンズを含む対物レンズ |
US7239447B2 (en) | 2001-05-15 | 2007-07-03 | Carl Zeiss Smt Ag | Objective with crystal lenses |
DE10123725A1 (de) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren |
JP2003050349A (ja) * | 2001-05-30 | 2003-02-21 | Nikon Corp | 光学系および該光学系を備えた露光装置 |
EP1780570A3 (de) * | 2001-06-01 | 2008-01-02 | ASML Netherlands B.V. | Kompensation der Doppelbrechung in kubisch kristallinen Projektionslinsen und optischen Systemen |
US6683710B2 (en) | 2001-06-01 | 2004-01-27 | Optical Research Associates | Correction of birefringence in cubic crystalline optical systems |
US20030011893A1 (en) * | 2001-06-20 | 2003-01-16 | Nikon Corporation | Optical system and exposure apparatus equipped with the optical system |
TW558749B (en) * | 2001-06-20 | 2003-10-21 | Nikon Corp | Optical system and the exposure device comprising the same |
US6831731B2 (en) * | 2001-06-28 | 2004-12-14 | Nikon Corporation | Projection optical system and an exposure apparatus with the projection optical system |
WO2003003429A1 (fr) * | 2001-06-28 | 2003-01-09 | Nikon Corporation | Systeme de projection optique, systeme d'exposition et procede |
TW571344B (en) * | 2001-07-10 | 2004-01-11 | Nikon Corp | Manufacturing method for projection optic system |
TW584898B (en) * | 2001-07-10 | 2004-04-21 | Nikon Corp | Optical system and exposure apparatus having the optical system |
US6775063B2 (en) | 2001-07-10 | 2004-08-10 | Nikon Corporation | Optical system and exposure apparatus having the optical system |
US6788389B2 (en) * | 2001-07-10 | 2004-09-07 | Nikon Corporation | Production method of projection optical system |
US6844915B2 (en) | 2001-08-01 | 2005-01-18 | Nikon Corporation | Optical system and exposure apparatus provided with the optical system |
TW554412B (en) * | 2001-09-07 | 2003-09-21 | Nikon Corp | Optical system, projection optical system, exposure device having the projection optical system, and method for manufacturing micro device using the exposure device |
WO2003023480A1 (fr) * | 2001-09-07 | 2003-03-20 | Nikon Corporation | Systeme optique et systeme d'exposition comprenant ledit systeme optique et procede de production dudit dispositif |
TW559885B (en) * | 2001-10-19 | 2003-11-01 | Nikon Corp | Projection optical system and exposure device having the projection optical system |
US6970232B2 (en) | 2001-10-30 | 2005-11-29 | Asml Netherlands B.V. | Structures and methods for reducing aberration in integrated circuit fabrication systems |
US7453641B2 (en) | 2001-10-30 | 2008-11-18 | Asml Netherlands B.V. | Structures and methods for reducing aberration in optical systems |
US6995908B2 (en) | 2001-10-30 | 2006-02-07 | Asml Netherlands B.V. | Methods for reducing aberration in optical systems |
US6844972B2 (en) | 2001-10-30 | 2005-01-18 | Mcguire, Jr. James P. | Reducing aberration in optical systems comprising cubic crystalline optical elements |
JP2003161882A (ja) * | 2001-11-29 | 2003-06-06 | Nikon Corp | 投影光学系、露光装置および露光方法 |
DE10162796B4 (de) * | 2001-12-20 | 2007-10-31 | Carl Zeiss Smt Ag | Verfahren zur Optimierung der Abbildungseigenschaften von mindestens zwei optischen Elementen sowie photolithographisches Fertigungsverfahren |
JP2003297729A (ja) * | 2002-04-03 | 2003-10-17 | Nikon Corp | 投影光学系、露光装置および露光方法 |
JP2003309059A (ja) * | 2002-04-17 | 2003-10-31 | Nikon Corp | 投影光学系、その製造方法、露光装置および露光方法 |
JP4333078B2 (ja) * | 2002-04-26 | 2009-09-16 | 株式会社ニコン | 投影光学系、該投影光学系を備えた露光装置および該投影光学系を用いた露光方法並びにデバイス製造方法 |
US7154669B2 (en) * | 2002-08-05 | 2006-12-26 | Asml Holding N.V. | Method and system for correction of intrinsic birefringence in UV microlithography |
US6958864B2 (en) | 2002-08-22 | 2005-10-25 | Asml Netherlands B.V. | Structures and methods for reducing polarization aberration in integrated circuit fabrication systems |
AU2003298405A1 (en) | 2002-09-03 | 2004-03-29 | Carl Zeiss Smt Ag | Optimization method for an objective with fluoride crystal lenses and objective with fluoride crystal lenses |
TW200412617A (en) * | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
EP3226073A3 (de) | 2003-04-09 | 2017-10-11 | Nikon Corporation | Belichtungsverfahren und -vorrichtung sowie verfahren zur herstellung der vorrichtung |
DE10317958B4 (de) * | 2003-04-17 | 2005-09-08 | Hilti Ag | Vorrichtung zum Erzeugen und Projizieren von Lichtmarken |
DE10324206A1 (de) * | 2003-05-28 | 2004-12-23 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage |
AU2003304216A1 (en) * | 2003-06-18 | 2005-01-04 | Carl Zeiss Smt Ag | Projection lens and method for selection of optical materials in such a lens |
TW201834020A (zh) | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
TW201809801A (zh) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
CN1910522B (zh) | 2004-01-16 | 2010-05-26 | 卡尔蔡司Smt股份公司 | 偏振调制光学元件 |
US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
TWI395068B (zh) * | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | 光學系統、曝光裝置以及曝光方法 |
TWI437618B (zh) * | 2004-02-06 | 2014-05-11 | 尼康股份有限公司 | 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法 |
US7303841B2 (en) * | 2004-03-26 | 2007-12-04 | Taiwan Semiconductor Manufacturing Company | Repair of photolithography masks by sub-wavelength artificial grating technology |
JP4776891B2 (ja) * | 2004-04-23 | 2011-09-21 | キヤノン株式会社 | 照明光学系、露光装置、及びデバイス製造方法 |
US7324280B2 (en) * | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
US20090195876A1 (en) * | 2005-01-05 | 2009-08-06 | Carl Zeiss Smt Ag | Method for describing a retardation distribution in a microlithographic projection exposure apparatus |
TW200923418A (en) * | 2005-01-21 | 2009-06-01 | Nikon Corp | Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device |
JP2006279017A (ja) * | 2005-03-02 | 2006-10-12 | Canon Inc | 露光装置及び方法、計測装置、並びに、デバイス製造方法 |
JPWO2009044834A1 (ja) * | 2007-10-01 | 2011-02-10 | 株式会社ニコン | 偏光補償光学系及びこの光学系に用いられる偏光補償光学素子 |
US20110037962A1 (en) * | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
US20110205519A1 (en) * | 2010-02-25 | 2011-08-25 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
JP6024653B2 (ja) | 2011-03-02 | 2016-11-16 | 株式会社ニコン | 合成石英ガラスの熱処理装置、合成石英ガラスの熱処理方法、光学系の製造方法および露光装置の製造方法 |
CN110568727B (zh) * | 2018-06-05 | 2021-07-02 | 上海微电子装备(集团)股份有限公司 | 一种曝光***、曝光方法和光刻机 |
Family Cites Families (13)
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---|---|---|---|---|
JPH0766108B2 (ja) * | 1986-05-01 | 1995-07-19 | オリンパス光学工業株式会社 | 偏光変化の補償法 |
US5325230A (en) * | 1989-06-09 | 1994-06-28 | Shin-Etsu Quartz Products Co., Ltd. | Optical members and blanks of synthetic silica glass and method for their production |
US5303001A (en) * | 1992-12-21 | 1994-04-12 | Ultratech Stepper, Inc. | Illumination system for half-field dyson stepper |
US5699183A (en) * | 1993-02-10 | 1997-12-16 | Nikon Corporation | Silica glass member for UV-lithography, method for silica glass production, and method for silica glass member production |
JP3083957B2 (ja) * | 1994-06-16 | 2000-09-04 | 株式会社ニコン | 光リソグラフィー用蛍石 |
JP3089955B2 (ja) * | 1994-10-06 | 2000-09-18 | 株式会社ニコン | 光リソグラフィー用光学部材及び投影光学系 |
US6087283A (en) * | 1995-01-06 | 2000-07-11 | Nikon Corporation | Silica glass for photolithography |
JPH09102454A (ja) * | 1995-10-03 | 1997-04-15 | Nikon Corp | 投影露光装置 |
DE69702830T2 (de) * | 1996-07-02 | 2001-03-29 | Heraeus Quarzglas | Projektionsgerät mit ausrichtvorrichtung zur herstellung integrierter schaltungen |
JP4014716B2 (ja) * | 1997-06-24 | 2007-11-28 | オリンパス株式会社 | 偏光補償光学系を有する光学系 |
JP3413067B2 (ja) * | 1997-07-29 | 2003-06-03 | キヤノン株式会社 | 投影光学系及びそれを用いた投影露光装置 |
DE19807120A1 (de) * | 1998-02-20 | 1999-08-26 | Zeiss Carl Fa | Optisches System mit Polarisationskompensator |
JP4207389B2 (ja) * | 1999-01-06 | 2009-01-14 | 株式会社ニコン | 投影光学系、その製造方法、及びそれを用いた投影露光装置 |
-
2000
- 2000-01-06 JP JP2000592870A patent/JP4207389B2/ja not_active Expired - Lifetime
- 2000-01-06 DE DE60042186T patent/DE60042186D1/de not_active Expired - Lifetime
- 2000-01-06 EP EP00900129A patent/EP1063684B1/de not_active Expired - Lifetime
- 2000-01-06 AT AT00900129T patent/ATE431619T1/de not_active IP Right Cessation
- 2000-01-06 WO PCT/JP2000/000027 patent/WO2000041226A1/ja active IP Right Grant
- 2000-01-06 KR KR1020007009650A patent/KR20010088279A/ko active IP Right Grant
- 2000-01-06 AU AU18912/00A patent/AU1891200A/en not_active Abandoned
- 2000-01-06 CN CN00800017A patent/CN1293822A/zh active Pending
- 2000-09-01 US US09/654,269 patent/US6366404B1/en not_active Expired - Lifetime
-
2001
- 2001-12-27 US US10/026,634 patent/US6583931B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1063684B1 (de) | 2009-05-13 |
EP1063684A4 (de) | 2005-07-27 |
AU1891200A (en) | 2000-07-24 |
US6366404B1 (en) | 2002-04-02 |
JP4207389B2 (ja) | 2009-01-14 |
US6583931B2 (en) | 2003-06-24 |
KR20010088279A (ko) | 2001-09-26 |
DE60042186D1 (de) | 2009-06-25 |
US20020085176A1 (en) | 2002-07-04 |
EP1063684A1 (de) | 2000-12-27 |
CN1293822A (zh) | 2001-05-02 |
WO2000041226A1 (fr) | 2000-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |