ATE424037T1 - Teilchenstrahlbelichtungssystem und vorrichtung zur strahlbeeinflussung - Google Patents

Teilchenstrahlbelichtungssystem und vorrichtung zur strahlbeeinflussung

Info

Publication number
ATE424037T1
ATE424037T1 AT05015781T AT05015781T ATE424037T1 AT E424037 T1 ATE424037 T1 AT E424037T1 AT 05015781 T AT05015781 T AT 05015781T AT 05015781 T AT05015781 T AT 05015781T AT E424037 T1 ATE424037 T1 AT E424037T1
Authority
AT
Austria
Prior art keywords
aperture plate
exposure system
influencing
regions
charged particles
Prior art date
Application number
AT05015781T
Other languages
English (en)
Inventor
Elmar Platzgummer
Gerhard Stengl
Original Assignee
Zeiss Carl Sms Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Sms Gmbh filed Critical Zeiss Carl Sms Gmbh
Application granted granted Critical
Publication of ATE424037T1 publication Critical patent/ATE424037T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Laser Beam Processing (AREA)
AT05015781T 2005-07-20 2005-07-20 Teilchenstrahlbelichtungssystem und vorrichtung zur strahlbeeinflussung ATE424037T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05015781A EP1746630B1 (de) 2005-07-20 2005-07-20 Teilchenstrahlbelichtungssystem und Vorrichtung zur Strahlbeeinflussung

Publications (1)

Publication Number Publication Date
ATE424037T1 true ATE424037T1 (de) 2009-03-15

Family

ID=34937885

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05015781T ATE424037T1 (de) 2005-07-20 2005-07-20 Teilchenstrahlbelichtungssystem und vorrichtung zur strahlbeeinflussung

Country Status (7)

Country Link
US (1) US8368030B2 (de)
EP (1) EP1746630B1 (de)
JP (1) JP5097703B2 (de)
KR (1) KR101258720B1 (de)
AT (1) ATE424037T1 (de)
DE (1) DE602005012945D1 (de)
WO (1) WO2007009804A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8552373B2 (en) * 2009-05-27 2013-10-08 Hitachi High-Technologies Corporation Charged particle beam device and sample observation method
KR101755577B1 (ko) * 2010-11-13 2017-07-07 마퍼 리쏘그라피 아이피 비.브이. 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP5897888B2 (ja) * 2011-12-07 2016-04-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置
JP6230881B2 (ja) 2013-11-12 2017-11-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム描画方法
JP6593090B2 (ja) * 2015-10-20 2019-10-23 株式会社ニューフレアテクノロジー 支持ケース及びマルチ荷電粒子ビーム描画装置
JP6640040B2 (ja) * 2016-06-23 2020-02-05 株式会社ニューフレアテクノロジー 伝熱板および描画装置
US10347460B2 (en) 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
JP6847886B2 (ja) 2018-03-20 2021-03-24 株式会社東芝 荷電粒子ビーム偏向デバイス
TWI756562B (zh) 2019-02-28 2022-03-01 日商東芝股份有限公司 多電子束裝置
KR20210150978A (ko) * 2020-06-03 2021-12-13 에이에스엠 아이피 홀딩 비.브이. 샤워 플레이트, 기판 처리 장치 및 기판 처리 방법

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US3870882A (en) * 1973-05-23 1975-03-11 Gca Corp Esca x-ray source
ATA331185A (de) 1985-11-13 1994-05-15 Ims Ionen Mikrofab Syst Verfahren zum stabilisieren von masken
US5262341A (en) 1989-05-19 1993-11-16 Fujitsu Limited Blanking aperture array and charged particle beam exposure method
JPH06124884A (ja) * 1992-10-12 1994-05-06 Mitsubishi Electric Corp 電子線露光装置
JPH07201701A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 電子ビーム露光装置および露光方法
US5528048A (en) 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
KR100342041B1 (ko) * 1995-12-29 2002-11-07 삼성에스디아이 주식회사 섀도우마스크 프레임 조립체를 갖는 음극선관
JP3565652B2 (ja) 1996-04-25 2004-09-15 富士通株式会社 荷電粒子ビーム露光装置用透過マスク及びそれを利用した露光装置
US5742065A (en) * 1997-01-22 1998-04-21 International Business Machines Corporation Heater for membrane mask in an electron-beam lithography system
JPH10303117A (ja) * 1997-04-30 1998-11-13 Nikon Corp 電子線光学系
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JP2000030647A (ja) 1998-07-10 2000-01-28 Advantest Corp 荷電粒子ビーム露光装置
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Also Published As

Publication number Publication date
US20090140160A1 (en) 2009-06-04
WO2007009804A1 (en) 2007-01-25
KR101258720B1 (ko) 2013-04-26
JP5097703B2 (ja) 2012-12-12
JP2009502033A (ja) 2009-01-22
EP1746630A1 (de) 2007-01-24
US8368030B2 (en) 2013-02-05
EP1746630B1 (de) 2009-02-25
DE602005012945D1 (de) 2009-04-09
KR20080038349A (ko) 2008-05-06

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