ATE399329T1 - Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer - Google Patents

Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer

Info

Publication number
ATE399329T1
ATE399329T1 AT03078341T AT03078341T ATE399329T1 AT E399329 T1 ATE399329 T1 AT E399329T1 AT 03078341 T AT03078341 T AT 03078341T AT 03078341 T AT03078341 T AT 03078341T AT E399329 T1 ATE399329 T1 AT E399329T1
Authority
AT
Austria
Prior art keywords
semiconductor wafer
voltage
lifetime
measuring
charge carriers
Prior art date
Application number
AT03078341T
Other languages
English (en)
Inventor
William H Howland
Original Assignee
Solid State Measurements Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solid State Measurements Inc filed Critical Solid State Measurements Inc
Application granted granted Critical
Publication of ATE399329T1 publication Critical patent/ATE399329T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
AT03078341T 2002-10-22 2003-10-22 Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer ATE399329T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/277,689 US6836139B2 (en) 2002-10-22 2002-10-22 Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer

Publications (1)

Publication Number Publication Date
ATE399329T1 true ATE399329T1 (de) 2008-07-15

Family

ID=32069312

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03078341T ATE399329T1 (de) 2002-10-22 2003-10-22 Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer

Country Status (6)

Country Link
US (1) US6836139B2 (de)
EP (1) EP1413892B1 (de)
JP (1) JP2004146831A (de)
AT (1) ATE399329T1 (de)
DE (1) DE60321761D1 (de)
TW (1) TWI296329B (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004070775A2 (en) * 2003-01-28 2004-08-19 The Government Of The United States Of America As Represented By The Secretary Of Commerce Light-induced capacitance spectroscopy and method for obtaining carrier lifetime with micron/nanometer scale
US7023231B2 (en) * 2004-05-14 2006-04-04 Solid State Measurements, Inc. Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof
US7037734B2 (en) * 2004-06-23 2006-05-02 Solid State Measurements, Inc. Method and apparatus for determining generation lifetime of product semiconductor wafers
DE102006013588A1 (de) * 2006-03-22 2007-09-27 Fachhochschule Deggendorf Zweidimensinale Profilierung von Dotierungsprofilen einer Materialprobe mittels Rastersondenmikroskopie
WO2008052237A1 (en) * 2006-10-30 2008-05-08 Newsouth Innovations Pty Limited Methods and systems of producing self-consistently a calibration constant for excess charge carrier lifetime
KR101913311B1 (ko) * 2012-04-09 2019-01-15 삼성디스플레이 주식회사 실리콘 박막 측정 방법, 실리콘 박막 결함 검출 방법, 및 실리콘 박막 결함 검출 장치
KR101483716B1 (ko) * 2013-12-27 2015-01-16 국민대학교산학협력단 광 응답 특성을 이용한 유기 박막 트랜지스터의 과잉 캐리어 수명 추출 방법 및 그 장치
TWI555326B (zh) * 2015-05-29 2016-10-21 Lehighton Electronics Inc 非接觸式感測光伏半導體的最大開路電壓的裝置及方法
CN111398774B (zh) * 2020-03-18 2022-02-15 西安奕斯伟材料科技有限公司 硅片少子寿命的测试方法及装置
RU2750427C1 (ru) * 2020-10-20 2021-06-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" Способ определения удельного электросопротивления полупроводников с помощью инфракрасной оптики
US11940489B2 (en) * 2021-10-15 2024-03-26 Infineon Technologies Ag Semiconductor device having an optical device degradation sensor

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JPH0252342U (de) * 1988-09-30 1990-04-16
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US5406214A (en) 1990-12-17 1995-04-11 Semilab Felvezeto Fizikai Lab, Rt Method and apparatus for measuring minority carrier lifetime in semiconductor materials
JPH06151538A (ja) * 1992-02-03 1994-05-31 Leo Giken:Kk 半導体ウエハの評価方法及びその装置
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CA2126481C (en) * 1994-06-22 2001-03-27 Andreas Mandelis Non-contact photothermal method for measuring thermal diffusivity and electronic defect properties of solids
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JPH11186350A (ja) * 1997-12-16 1999-07-09 Dainippon Screen Mfg Co Ltd 半導体の少数キャリアの再結合ライフタイム測定方法
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JP3235573B2 (ja) 1998-11-05 2001-12-04 日本電気株式会社 半導体装置の試験システム
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US6323951B1 (en) 1999-03-22 2001-11-27 Boxer Cross Incorporated Apparatus and method for determining the active dopant profile in a semiconductor wafer
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EP1377842A4 (de) * 2001-03-23 2005-08-17 Solid State Measurements Inc Verfahren zur erkennung der trägerdosis eines halbleiterwafers

Also Published As

Publication number Publication date
US6836139B2 (en) 2004-12-28
TWI296329B (en) 2008-05-01
US20040075460A1 (en) 2004-04-22
DE60321761D1 (de) 2008-08-07
EP1413892A2 (de) 2004-04-28
EP1413892A3 (de) 2005-01-12
EP1413892B1 (de) 2008-06-25
TW200413735A (en) 2004-08-01
JP2004146831A (ja) 2004-05-20

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