Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

• Engineering & Computer Science (AREA)
• Chemical & Material Sciences (AREA)
• Computer Hardware Design (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Manufacturing & Machinery (AREA)
• General Physics & Mathematics (AREA)
• Physics & Mathematics (AREA)
• Organic Chemistry (AREA)
• General Chemical & Material Sciences (AREA)
• Metallurgy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Crystallography & Structural Chemistry (AREA)
• Recrystallisation Techniques (AREA)
• Laminated Bodies (AREA)
• Adhesives Or Adhesive Processes (AREA)
• Photovoltaic Devices (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=34684904

Family Applications (1)

Country Status (9)

Families Citing this family (24)

Family Cites Families (19)

• 2004
  • 2004-01-09 FR FR0400175A patent/FR2864970B1/fr not_active Expired - Fee Related
  • 2004-10-28 AT AT04791788T patent/ATE398833T1/de not_active IP Right Cessation
  • 2004-10-28 DE DE602004014533T patent/DE602004014533D1/de active Active
  • 2004-10-28 CN CNB2004800402057A patent/CN100472749C/zh active Active
  • 2004-10-28 WO PCT/IB2004/003762 patent/WO2005076345A1/en active IP Right Grant
  • 2004-10-28 KR KR1020067013398A patent/KR100855793B1/ko active IP Right Grant
  • 2004-10-28 JP JP2006548416A patent/JP4745249B2/ja active Active
  • 2004-10-28 EP EP04791788A patent/EP1702357B1/de active Active
• 2006
  • 2006-06-21 US US11/472,663 patent/US7887936B2/en active Active
• 2011
  • 2011-01-03 US US12/983,543 patent/US20110094668A1/en not_active Abandoned

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