NO20070833L - Tynnfilmmateriale og fremstilling av dette - Google Patents

Tynnfilmmateriale og fremstilling av dette

Info

Publication number
NO20070833L
NO20070833L NO20070833A NO20070833A NO20070833L NO 20070833 L NO20070833 L NO 20070833L NO 20070833 A NO20070833 A NO 20070833A NO 20070833 A NO20070833 A NO 20070833A NO 20070833 L NO20070833 L NO 20070833L
Authority
NO
Norway
Prior art keywords
layer
film
thin film
film material
manufacture
Prior art date
Application number
NO20070833A
Other languages
English (en)
Inventor
Shuji Hahakura
Kazuya Ohmatsu
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of NO20070833L publication Critical patent/NO20070833L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Et tynnfilmmateriale og en fremgangsmåte for å fremstille tyimfilmmaterialet oppnås hvor egenskapene av filmene er anordnet hvor et substrat kan forbedres. En superledende tråd 1 med et substiat 2, et mellomliggende tyimfilmlag (mellomlag 3) anordnet på substiatet og som omfatter et lag eller minst to lag et enkeltkrystall tyimfilmlag (det superledende lag 4) anordnet på det mellomliggende tyimfilmlag (mellomlaget 3). En øvre fiate (slipeflaten 10) som er den øvre flaten av minst ett lag det mellomliggende tyimfilmlag (mellomlaget 3) og en motstående enkeltkrystall tyimfilmlag (det superledende lag 4) er slipt.
NO20070833A 2004-07-16 2007-02-13 Tynnfilmmateriale og fremstilling av dette NO20070833L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004210023A JP2006027958A (ja) 2004-07-16 2004-07-16 薄膜材料およびその製造方法
PCT/JP2005/010831 WO2006008893A1 (ja) 2004-07-16 2005-06-14 薄膜材料およびその製造方法

Publications (1)

Publication Number Publication Date
NO20070833L true NO20070833L (no) 2007-02-13

Family

ID=35785019

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20070833A NO20070833L (no) 2004-07-16 2007-02-13 Tynnfilmmateriale og fremstilling av dette

Country Status (11)

Country Link
US (1) US20070170428A1 (no)
EP (1) EP1777324A4 (no)
JP (1) JP2006027958A (no)
KR (1) KR20070034628A (no)
CN (1) CN1997779B (no)
CA (1) CA2580273A1 (no)
HK (1) HK1102443A1 (no)
NO (1) NO20070833L (no)
RU (1) RU2353524C2 (no)
TW (1) TWI288937B (no)
WO (1) WO2006008893A1 (no)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007311194A (ja) * 2006-05-18 2007-11-29 Sumitomo Electric Ind Ltd 超電導薄膜材料および超電導薄膜材料の製造方法
JP5049611B2 (ja) * 2007-02-16 2012-10-17 日本ミクロコーティング株式会社 超電導体用テープ基材の製造方法及びテープ基材
JP2008303082A (ja) * 2007-06-05 2008-12-18 Kagoshima Univ エピタキシャル膜形成用配向基板の中間層及びエピタキシャル膜形成用配向基板
JP5244337B2 (ja) * 2007-06-12 2013-07-24 公益財団法人国際超電導産業技術研究センター テープ状酸化物超電導体
JP2009016257A (ja) * 2007-07-06 2009-01-22 Sumitomo Electric Ind Ltd 超電導線材および超電導線材の製造方法
JP5513154B2 (ja) * 2010-02-12 2014-06-04 昭和電線ケーブルシステム株式会社 酸化物超電導線材及び酸化物超電導線材の製造方法
EP2410586B1 (en) * 2010-07-19 2012-09-26 Bruker HTS GmbH Method for producing a HTS coated conductor and HTS coated conductor with reduced losses
JP5624839B2 (ja) * 2010-09-17 2014-11-12 株式会社フジクラ 酸化物超電導導体用基材及びその製造方法と酸化物超電導導体及びその製造方法
JP2012169062A (ja) * 2011-02-10 2012-09-06 Sumitomo Electric Ind Ltd 酸化物超電導膜の製造方法
US9159898B2 (en) 2011-05-31 2015-10-13 Furukawa Electric Co., Ltd. Oxide superconductor thin film and superconducting fault current limiter
KR20140102125A (ko) * 2012-06-27 2014-08-21 후루카와 덴키 고교 가부시키가이샤 초전도선
WO2014177325A1 (de) * 2013-04-29 2014-11-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Verfahren zum herstellen einer elektrisch isolierenden schicht
WO2014207946A1 (en) * 2013-06-28 2014-12-31 National Institute Of Advanced Industrial Science And Technology Surface layer superconductor and fabrication method of the same
WO2015016329A1 (ja) * 2013-08-02 2015-02-05 ダイキン工業株式会社 重合性官能基及び架橋性官能基からなる群より選択される少なくとも１種の基を含有する含フッ素重合体を含む組成物及び塗装物品

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104850A (en) * 1990-02-28 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Preparation of high temperature superconducting coated wires by dipping and post annealing
JP3017886B2 (ja) * 1992-07-30 2000-03-13 住友電気工業株式会社 酸化物超電導膜の製造方法
JP3320783B2 (ja) * 1992-08-19 2002-09-03 住友電気工業株式会社 超電導線の製造方法
JP3037514B2 (ja) * 1992-09-29 2000-04-24 松下電器産業株式会社 薄膜超伝導体及びその製造方法
JPH06114812A (ja) * 1992-10-06 1994-04-26 Ngk Insulators Ltd 酸化物超電導体とその製造方法
JP3188358B2 (ja) * 1994-03-25 2001-07-16 財団法人国際超電導産業技術研究センター 酸化物超電導体薄膜の製造方法
US6458223B1 (en) * 1997-10-01 2002-10-01 American Superconductor Corporation Alloy materials
US6190752B1 (en) * 1997-11-13 2001-02-20 Board Of Trustees Of The Leland Stanford Junior University Thin films having rock-salt-like structure deposited on amorphous surfaces
ATE394521T1 (de) * 2000-02-09 2008-05-15 Fujikura Ltd Verfahren zur herstellung dünner polykristalliner mgo filme
JP4398582B2 (ja) * 2000-11-15 2010-01-13 古河電気工業株式会社 酸化物超電導線材およびその製造方法
US20030036483A1 (en) * 2000-12-06 2003-02-20 Arendt Paul N. High temperature superconducting thick films
US6756139B2 (en) * 2002-03-28 2004-06-29 The Regents Of The University Of California Buffer layers on metal alloy substrates for superconducting tapes
US7510641B2 (en) * 2003-07-21 2009-03-31 Los Alamos National Security, Llc High current density electropolishing in the preparation of highly smooth substrate tapes for coated conductors

Also Published As

Publication number Publication date
EP1777324A1 (en) 2007-04-25
RU2353524C2 (ru) 2009-04-27
WO2006008893A1 (ja) 2006-01-26
US20070170428A1 (en) 2007-07-26
RU2007105754A (ru) 2008-08-27
JP2006027958A (ja) 2006-02-02
HK1102443A1 (en) 2007-11-23
CA2580273A1 (en) 2006-01-26
KR20070034628A (ko) 2007-03-28
CN1997779B (zh) 2011-10-19
TW200608418A (en) 2006-03-01
EP1777324A4 (en) 2010-04-07
TWI288937B (en) 2007-10-21
CN1997779A (zh) 2007-07-11

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