ATE346379T1 - Verfahren zur behandlung der oberfläche von halbleitenden substraten - Google Patents
Verfahren zur behandlung der oberfläche von halbleitenden substratenInfo
- Publication number
- ATE346379T1 ATE346379T1 AT97305641T AT97305641T ATE346379T1 AT E346379 T1 ATE346379 T1 AT E346379T1 AT 97305641 T AT97305641 T AT 97305641T AT 97305641 T AT97305641 T AT 97305641T AT E346379 T1 ATE346379 T1 AT E346379T1
- Authority
- AT
- Austria
- Prior art keywords
- treating
- semiconducting substrates
- hydrocarbon
- substrate
- layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9616225.0A GB9616225D0 (en) | 1996-08-01 | 1996-08-01 | Method of surface treatment of semiconductor substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE346379T1 true ATE346379T1 (de) | 2006-12-15 |
Family
ID=10797892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT97305641T ATE346379T1 (de) | 1996-08-01 | 1997-07-28 | Verfahren zur behandlung der oberfläche von halbleitenden substraten |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6261962B1 (de) |
| EP (1) | EP0822584B1 (de) |
| JP (1) | JP4237281B2 (de) |
| AT (1) | ATE346379T1 (de) |
| DE (1) | DE69736969T2 (de) |
| GB (1) | GB9616225D0 (de) |
Families Citing this family (89)
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| JP2772643B2 (ja) * | 1988-08-26 | 1998-07-02 | 株式会社半導体エネルギー研究所 | 被膜作製方法 |
| JP2918892B2 (ja) | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
| IT1225636B (it) | 1988-12-15 | 1990-11-22 | Sgs Thomson Microelectronics | Metodo di scavo con profilo di fondo arrotondato per strutture di isolamento incassate nel silicio |
| FR2640809B1 (fr) * | 1988-12-19 | 1993-10-22 | Chouan Yannick | Procede de gravure d'une couche d'oxyde metallique et depot simultane d'un film de polymere, application de ce procede a la fabrication d'un transistor |
| KR900013595A (ko) | 1989-02-15 | 1990-09-06 | 미다 가쓰시게 | 플라즈마 에칭방법 및 장치 |
| JPH03126222A (ja) | 1989-10-12 | 1991-05-29 | Canon Inc | 堆積膜形成方法 |
| JPH03129820A (ja) | 1989-10-16 | 1991-06-03 | Seiko Epson Corp | 半導体製造装置及び半導体装置の製造方法 |
| KR910010516A (ko) | 1989-11-15 | 1991-06-29 | 아오이 죠이치 | 반도체 메모리장치 |
| US5474650A (en) | 1991-04-04 | 1995-12-12 | Hitachi, Ltd. | Method and apparatus for dry etching |
| JP2913936B2 (ja) | 1991-10-08 | 1999-06-28 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3129820B2 (ja) | 1992-03-04 | 2001-01-31 | シスメックス株式会社 | 粒子検出装置 |
| US5368685A (en) * | 1992-03-24 | 1994-11-29 | Hitachi, Ltd. | Dry etching apparatus and method |
| JP2661455B2 (ja) | 1992-03-27 | 1997-10-08 | 株式会社日立製作所 | 真空処理装置 |
| JP3126222B2 (ja) | 1992-05-18 | 2001-01-22 | 株式会社たつみや漆器 | 合成樹脂製食品容器 |
| JPH0612767A (ja) | 1992-06-25 | 1994-01-21 | Victor Co Of Japan Ltd | 自動再生装置 |
| DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| US5478437A (en) * | 1994-08-01 | 1995-12-26 | Motorola, Inc. | Selective processing using a hydrocarbon and hydrogen |
| US5605600A (en) | 1995-03-13 | 1997-02-25 | International Business Machines Corporation | Etch profile shaping through wafer temperature control |
| ATE251341T1 (de) * | 1996-08-01 | 2003-10-15 | Surface Technology Systems Plc | Verfahren zur ätzung von substraten |
-
1996
- 1996-08-01 GB GBGB9616225.0A patent/GB9616225D0/en active Pending
-
1997
- 1997-07-28 DE DE69736969T patent/DE69736969T2/de not_active Expired - Lifetime
- 1997-07-28 AT AT97305641T patent/ATE346379T1/de not_active IP Right Cessation
- 1997-07-28 EP EP97305641A patent/EP0822584B1/de not_active Expired - Lifetime
- 1997-07-31 JP JP20667397A patent/JP4237281B2/ja not_active Expired - Lifetime
- 1997-08-01 US US08/904,954 patent/US6261962B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10144654A (ja) | 1998-05-29 |
| JP4237281B2 (ja) | 2009-03-11 |
| DE69736969D1 (de) | 2007-01-04 |
| EP0822584B1 (de) | 2006-11-22 |
| US6261962B1 (en) | 2001-07-17 |
| EP0822584A3 (de) | 1998-05-13 |
| GB9616225D0 (en) | 1996-09-11 |
| DE69736969T2 (de) | 2007-10-18 |
| EP0822584A2 (de) | 1998-02-04 |
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