KR900013595A - 플라즈마 에칭방법 및 장치 - Google Patents

플라즈마 에칭방법 및 장치 Download PDF

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KR900013595A
KR900013595A KR1019900001574A KR900001574A KR900013595A KR 900013595 A KR900013595 A KR 900013595A KR 1019900001574 A KR1019900001574 A KR 1019900001574A KR 900001574 A KR900001574 A KR 900001574A KR 900013595 A KR900013595 A KR 900013595A
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plasma
plasma etching
sample
voltage
acceleration voltage
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KR1019900001574A
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히로노브 가와하라
요시나오 가와사끼
요시아끼 사또오
료우지 후꾸야마
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Publication of KR900013595A publication Critical patent/KR900013595A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Abstract

내용 없음

Description

플라즈마 에칭방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예인 플라즈마에칭장치를 나타낸 구성도,
제2도는 제1도의 장치에 의한 제어신호의 패턴도,
제3도는 제1도의 장치에 의한 가속전압의 인가패턴도.

Claims (20)

  1. 시료를 수온이하의 온도로 냉각하고 그 시료를 가스플라즈마에서 의하여 에칭처리하는 방법에 있어서, 상기 시료를 향하여 가스플라즈마중의 이온을 가속시키는 가속전압을 반복하여 변화시키는 플라즈마 에칭방법.
  2. 제1항에 있어서, 상기 가속전압을 주기적으로 변화시키는 플라즈마 에칭방법.
  3. 제1항에 있어서, 상기 가속전압을 고주파전력을 시료대에 인가하도록 이루어진 플라즈마 에칭방법.
  4. 제1항에 있어서, 상기 가속전압은 직류전압을 시료대에 인가하도록 이루어진 플라즈마 에칭방법.
  5. 제1항에 있어서, 상기 가속전압은 고주파전력과 교류전압을 합성하여 시료대에 인가하도록 이루어진 플라즈마 에칭방법.
  6. 제1항에 있어서, 상기 가속전압을 직류전압을 그리드 전극에 인가되게 이루어진 플라즈마 에칭방법.
  7. 제1항에 있어서, 상기 가스플라즈마는 마이크로파에 의하여 발생시키는 플라즈마 에칭방법.
  8. 제1항에 있어서, 상기 가스플라즈마는 평행평판 전극간에 고주파전력을 인가하여 발생시키는 플라즈마 에칭방법.
  9. 시료를 수온이하의 온도로 냉각하고 그 시료를 가스플라즈마에서 의하여 에칭처리하는 장치에 있어서, 상기 시료를 향하여 상기 가스플라즈마중의 이온을 가속시키는 가속전압을 반복하여 변화시키는 수단을 설치한 플라즈마 에칭장치.
  10. 제9항에 있어서, 상기 가속전압은 시료대에 접속된 고주파전원에 의하여 부여되는 플라즈마 에칭장치.
  11. 제9항에 있어서, 상기 가속전압은 시료대에 접속된 직류전원에 의하여 부여되는 플라즈마 에칭장치.
  12. 제9항에 있어서, 상기 가속전압은 시료대에 접속된 고주파 전원과 교류 발생원에 의하여 부여되는 플라즈마 에칭장치.
  13. 제9항에 있어서, 상기 가속전압은 그리드전극에 접속된 직류전원에 의하여 부여되는 플라즈마 에칭장치.
  14. 제9항에 있어서, 상기 가스플라즈마는 마이크로파에 의하여 발생시키는 플라즈마 에칭장치.
  15. 제9항에 있어서, 상기 가스플라즈마는 평행평판전극에 고주파전력을 인가하여 발생시키는 플라즈마 에칭장치.
  16. 시료를 수온이하의 온도를 냉각하는 공정과, 감압하에서 가스플라즈마를 발생시키는 공정과, 상기 가스플라즈마을 이용하여 상기 냉각된 시료를 에칭처리하는 공정과, 상기 시료를 향하여 상기 가스플라즈마중의 이온을 가속시키는 가속전압을 반복하여 부여하는 공정과, 상기 가속전압을 에칭의 처리중에 반복하여 변화시키는 공정을 가진 플라즈마 에칭방법.
  17. 제16항에 있어서, 상기 가속전압은 시료대에 부여하는 바이어스전압인 플라즈마 에칭방법.
  18. 제16항에 있어서, 상기 가속전압은 그리드전극에 부여하는 직류전압인 플라즈마에칭방법.
  19. 진공용기와 상기 진공용기내를 감압배기하는 배기수단과 상기 진공용기내에 처리가스를 공급하는 가스공급수단과, 상기 진공용기내에 공급된 처리가스를 플라즈마화하는 플라즈마화수단과, 상기 진공용기내에 설치된 시료대를 수온이하의 온도로 냉각하는 냉각수단과, 상기 시료대에 배치된 시료를 향하여 상기 가스플라즈마중의 이온을 가속시키는 가속전압을 부여하는 전압부여수단과, 그 전압부여수단에 의하여 부여되는 가속전압을 반복하여 변화시키는 제어수단을 설치한 플라즈마 에칭장치.
  20. 진공용기와, 상기 진공용기내를 감압배기하는 배기수단과, 상기 진공용기내에 처리가스를 공급하는 가스공급수단과, 상기 진공용기내에 공급된 처리가스를 플라즈마화하는 플라즈마화 수단과, 상기 진공용기내에 설치된 시료대를 수온이하의 온도로 냉각하는 냉각수단과, 상기 시료대에 바이어스전압을 부여하는 바이어스인가 수단과, 그 바이어스 인가수단에 의하여 상기 시료대에 부여되는 바이어스전압을 반복하여 변화시키는 제어수단을 설치한 플라즈마 에칭장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900001574A 1989-02-15 1990-02-09 플라즈마 에칭방법 및 장치 KR900013595A (ko)

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JP89-33601 1989-02-15
JP3360189 1989-02-15

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KR900013595A true KR900013595A (ko) 1990-09-06

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US (2) US5900162A (ko)
EP (1) EP0383570A3 (ko)
JP (1) JPH03218627A (ko)
KR (1) KR900013595A (ko)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6063710A (en) * 1996-02-26 2000-05-16 Sony Corporation Method and apparatus for dry etching with temperature control
DE69725245T2 (de) * 1996-08-01 2004-08-12 Surface Technoloy Systems Plc Verfahren zur Ätzung von Substraten
GB9616225D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
US6187685B1 (en) 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
US6165375A (en) 1997-09-23 2000-12-26 Cypress Semiconductor Corporation Plasma etching method
US6071822A (en) * 1998-06-08 2000-06-06 Plasma-Therm, Inc. Etching process for producing substantially undercut free silicon on insulator structures
US6492277B1 (en) * 1999-09-10 2002-12-10 Hitachi, Ltd. Specimen surface processing method and apparatus
DE19841964B4 (de) * 1998-09-14 2004-08-05 Robert Bosch Gmbh Verfahren zur Einstellung der Ätzgeschwindigkeit beim anisotropen Plasmaätzen von lateralen Strukturen
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
US6291357B1 (en) 1999-10-06 2001-09-18 Applied Materials, Inc. Method and apparatus for etching a substrate with reduced microloading
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
US6562190B1 (en) * 2000-10-06 2003-05-13 Lam Research Corporation System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US7008877B2 (en) * 2003-05-05 2006-03-07 Unaxis Usa Inc. Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
GB2417251A (en) * 2004-08-18 2006-02-22 Nanofilm Technologies Int Removing material from a substrate surface using plasma
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US7749400B2 (en) * 2005-12-16 2010-07-06 Jason Plumhoff Method for etching photolithographic substrates
FR2902029B1 (fr) 2006-06-13 2009-01-23 Centre Nat Rech Scient Dispositif et procede de nettoyage d'un reacteur par plasma
US7786019B2 (en) 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
KR101508026B1 (ko) 2007-10-31 2015-04-08 램 리써치 코포레이션 컴포넌트 바디와 액체 냉각제 사이의 열 전도도를 제어하기 위해 가스 압력을 이용하는 온도 제어 모듈
DE102008009624A1 (de) * 2008-02-18 2009-08-20 Cs Clean Systems Ag Verfahren und Vorrichtung zur Reinigung der Abgase einer Prozessanlage
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9287092B2 (en) * 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9105447B2 (en) 2012-08-28 2015-08-11 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
CN111788654B (zh) 2017-11-17 2023-04-14 先进工程解决方案全球控股私人有限公司 等离子体处理***中的调制电源的改进应用
JP7289313B2 (ja) 2017-11-17 2023-06-09 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理のためのイオンバイアス電圧の空間的および時間的制御
KR20200100641A (ko) 2017-11-17 2020-08-26 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 소스 및 기판 바이어스의 동기화된 펄싱
CN114222958B (zh) 2019-07-12 2024-03-19 先进工程解决方案全球控股私人有限公司 具有单个受控开关的偏置电源
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
US4411733A (en) * 1982-06-18 1983-10-25 Bell Telephone Laboratories, Incorporated SPER Device for material working
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPS6113625A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd プラズマ処理装置
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JPS60126832A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd ドライエツチング方法および装置
JPH0614518B2 (ja) * 1984-01-27 1994-02-23 株式会社日立製作所 表面反応の制御方法
JPS6141132A (ja) * 1984-07-31 1986-02-27 Omron Tateisi Electronics Co 光スイツチ装置
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
JPH0773104B2 (ja) * 1986-02-14 1995-08-02 富士通株式会社 レジスト剥離方法
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JPH088237B2 (ja) * 1986-10-17 1996-01-29 株式会社日立製作所 プラズマ処理方法
JPH0691035B2 (ja) * 1986-11-04 1994-11-14 株式会社日立製作所 低温ドライエツチング方法及びその装置
JPS63128630A (ja) * 1986-11-19 1988-06-01 Hitachi Ltd 低温ドライエツチング装置
JPS63174320A (ja) * 1987-01-14 1988-07-18 Hitachi Ltd 低温エツチング方法
JP2656479B2 (ja) * 1987-01-14 1997-09-24 株式会社日立製作所 ドライエツチング方法
EP0297898B1 (en) * 1987-07-02 1995-10-11 Kabushiki Kaisha Toshiba Method of dry etching

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EP0383570A3 (en) 1993-01-27
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US6165377A (en) 2000-12-26
EP0383570A2 (en) 1990-08-22

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