ATE304733T1 - Speichermaterial und verfahren zur herstellung - Google Patents

Speichermaterial und verfahren zur herstellung

Info

Publication number
ATE304733T1
ATE304733T1 AT93914174T AT93914174T ATE304733T1 AT E304733 T1 ATE304733 T1 AT E304733T1 AT 93914174 T AT93914174 T AT 93914174T AT 93914174 T AT93914174 T AT 93914174T AT E304733 T1 ATE304733 T1 AT E304733T1
Authority
AT
Austria
Prior art keywords
materials
composition
layer
disclosed
address lines
Prior art date
Application number
AT93914174T
Other languages
English (en)
Inventor
Shimon Gendlin
Original Assignee
Kappa Numerics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kappa Numerics Inc filed Critical Kappa Numerics Inc
Application granted granted Critical
Publication of ATE304733T1 publication Critical patent/ATE304733T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Insulating Materials (AREA)
  • Laminated Bodies (AREA)
  • Extrusion Moulding Of Plastics Or The Like (AREA)
AT93914174T 1992-05-26 1993-05-26 Speichermaterial und verfahren zur herstellung ATE304733T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/889,025 US5390142A (en) 1992-05-26 1992-05-26 Memory material and method for its manufacture
PCT/US1993/005011 WO1994028552A1 (en) 1992-05-26 1993-05-26 Memory material and method for its manufacture

Publications (1)

Publication Number Publication Date
ATE304733T1 true ATE304733T1 (de) 2005-09-15

Family

ID=25394375

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93914174T ATE304733T1 (de) 1992-05-26 1993-05-26 Speichermaterial und verfahren zur herstellung

Country Status (10)

Country Link
US (4) US5390142A (de)
EP (1) EP0700571B1 (de)
JP (1) JP3392869B2 (de)
KR (1) KR100300771B1 (de)
AT (1) ATE304733T1 (de)
AU (1) AU4393093A (de)
CA (1) CA2163739C (de)
DE (1) DE69333869D1 (de)
RU (1) RU2124765C1 (de)
WO (1) WO1994028552A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5390142A (en) * 1992-05-26 1995-02-14 Kappa Numerics, Inc. Memory material and method for its manufacture
US5313176A (en) * 1992-10-30 1994-05-17 Motorola Lighting, Inc. Integrated common mode and differential mode inductor device
US5524092A (en) * 1995-02-17 1996-06-04 Park; Jea K. Multilayered ferroelectric-semiconductor memory-device
US6153318A (en) 1996-04-30 2000-11-28 Rothberg; Gerald M. Layered material having properties that are variable by an applied electric field
US5757056A (en) * 1996-11-12 1998-05-26 University Of Delaware Multiple magnetic tunnel structures
US5841689A (en) * 1996-11-29 1998-11-24 Gendlin; Shimon Non-volatile record carrier with magnetic quantum-optical reading effect and method for its manufacture
NO309500B1 (no) * 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
US6104633A (en) * 1998-02-10 2000-08-15 International Business Machines Corporation Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
US6548843B2 (en) * 1998-11-12 2003-04-15 International Business Machines Corporation Ferroelectric storage read-write memory
US8397998B1 (en) * 1999-10-23 2013-03-19 Ultracard, Inc. Data storage device, apparatus and method for using same
US6829157B2 (en) * 2001-12-05 2004-12-07 Korea Institute Of Science And Technology Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
US6835463B2 (en) * 2002-04-18 2004-12-28 Oakland University Magnetoelectric multilayer composites for field conversion
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
US7706103B2 (en) * 2006-07-25 2010-04-27 Seagate Technology Llc Electric field assisted writing using a multiferroic recording media
AU2008351057B2 (en) * 2008-02-22 2012-04-26 Toppan Printing Co., Ltd. Transponder and book form
US8634231B2 (en) 2009-08-24 2014-01-21 Qualcomm Incorporated Magnetic tunnel junction structure
US7579197B1 (en) * 2008-03-04 2009-08-25 Qualcomm Incorporated Method of forming a magnetic tunnel junction structure
RU2468471C1 (ru) * 2011-04-07 2012-11-27 Государственное образовательное учреждение высшего профессионального образования "Петрозаводский государственный университет" Способ получения энергонезависимого элемента памяти

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573485A (en) * 1968-06-24 1971-04-06 Delbert L Ballard Computer memory storage device
US3599185A (en) * 1968-07-10 1971-08-10 Gulf & Western Industries Ferroelectric capacitor output amplifier detector
US3585610A (en) * 1968-07-10 1971-06-15 Gulf & Western Industries Solid state memory and coding system
US3579208A (en) * 1969-02-28 1971-05-18 Gulf & Western Industries Ceramic memory amplifier
US3798619A (en) * 1972-10-24 1974-03-19 K Samofalov Piezoelectric transducer memory with non-destructive read out
US4059829A (en) * 1975-11-17 1977-11-22 Canadian Patents And Development Limited Multi state magnetic bubble domain cell for random access memories
JPS545705A (en) * 1977-06-16 1979-01-17 Fuji Photo Film Co Ltd Double layer magnetic recording medium
JPS5766996A (en) * 1980-10-15 1982-04-23 Hitachi Ltd Information recording member and method of preparing thereof
JPS59185048A (ja) * 1983-04-01 1984-10-20 Matsushita Electric Ind Co Ltd 光学情報記録部材及び記録方法
CA1217927A (en) * 1983-04-15 1987-02-17 Tsutomu Nanao Inorganic composite material and process for preparing the same
EP0130755B1 (de) * 1983-06-27 1988-08-24 Matsushita Electric Industrial Co., Ltd. Verfahren zur Erzeugung eines optischen Aufzeichnungsmaterials
JPS6042095A (ja) * 1983-08-19 1985-03-06 Hitachi Ltd 情報の記録用部材およびその製造方法
JPS60117413A (ja) * 1983-11-29 1985-06-24 Tdk Corp 磁気記録媒体の製造方法
JP2585520B2 (ja) * 1985-12-27 1997-02-26 株式会社日立製作所 相変化記録媒体
US4839208A (en) * 1986-04-30 1989-06-13 Nec Corporation Optical information recording medium
KR870011582A (ko) * 1986-05-27 1987-12-24 시노하라 아끼라 자기 기록 매체
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5164349A (en) * 1990-06-29 1992-11-17 Ube Industries Ltd. Electromagnetic effect material
US5106714A (en) * 1990-08-01 1992-04-21 Eastman Kodak Company Interdispersed two-phase ferrite composite and electrographic magnetic carrier particles therefrom
US5237529A (en) * 1991-02-01 1993-08-17 Richard Spitzer Microstructure array and activation system therefor
US5239504A (en) * 1991-04-12 1993-08-24 International Business Machines Corporation Magnetostrictive/electrostrictive thin film memory
US5251170A (en) * 1991-11-04 1993-10-05 Nonvolatile Electronics, Incorporated Offset magnetoresistive memory structures
SE501106C2 (sv) * 1992-02-18 1994-11-14 Peter Toth Optiskt minne
US5329486A (en) * 1992-04-24 1994-07-12 Motorola, Inc. Ferromagnetic memory device
US5390142A (en) * 1992-05-26 1995-02-14 Kappa Numerics, Inc. Memory material and method for its manufacture
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide

Also Published As

Publication number Publication date
EP0700571B1 (de) 2005-09-14
US5717235A (en) 1998-02-10
WO1994028552A1 (en) 1994-12-08
JP3392869B2 (ja) 2003-03-31
US5602791A (en) 1997-02-11
CA2163739A1 (en) 1994-12-08
DE69333869D1 (de) 2005-10-20
JPH08510867A (ja) 1996-11-12
CA2163739C (en) 2002-04-02
EP0700571A1 (de) 1996-03-13
US5707887A (en) 1998-01-13
US5390142A (en) 1995-02-14
RU2124765C1 (ru) 1999-01-10
EP0700571A4 (de) 1997-10-22
KR960702666A (ko) 1996-04-27
KR100300771B1 (ko) 2001-10-22
AU4393093A (en) 1994-12-20

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties