ATE276382T1 - DEPOSITION OF COPPER ON AN ACTIVATED SURFACE OF A SUBSTRATE - Google Patents
DEPOSITION OF COPPER ON AN ACTIVATED SURFACE OF A SUBSTRATEInfo
- Publication number
- ATE276382T1 ATE276382T1 AT99870243T AT99870243T ATE276382T1 AT E276382 T1 ATE276382 T1 AT E276382T1 AT 99870243 T AT99870243 T AT 99870243T AT 99870243 T AT99870243 T AT 99870243T AT E276382 T1 ATE276382 T1 AT E276382T1
- Authority
- AT
- Austria
- Prior art keywords
- ions
- soln
- contg
- reducing agent
- compd
- Prior art date
Links
Abstract
PROBLEM TO BE SOLVED: To obtain an aq.soln. for electroless Cu plating which does not substantially contain Na, is preferable for the environment, is excellent in thermal stability and has a long life by incorporating a copper source of Cu (II) ions, a reducing agent, an additive for pH control and a specified compd. for complexing Cu ions therein. SOLUTION: In an aq.soln. for electroless Cu plating contg. a copper source of Cu (II) ions such as CuSO4.5H2O a pH adjusting additive, a reducing agent and a compd. for complexing Cu ions, as this compd., the one having a chemical structure of COOR1-COHR2 (R1 denotes an organic group covalently bonded to a carboxylate group, and R2 denotes hydrogen or an organic group) such as diethyltartrate is used. Moreover, as the reducing agent, formaldehyde of <1M or the like is preferable. In this aq.soln., pH is controlled to 11.0 to 13.5, and temp. is controlled to <=45 deg.C, when dipping a matrix into this solution, a Cu-contg. layer of 100 to 2000 nm is formed on the active face of a Cu-diffused bulkhead layer of Ti or the like in the matrix, and, if required, a Cu-contg. metal is electroplated on the layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11611099P | 1999-01-15 | 1999-01-15 | |
| EP99870077A EP1020543A1 (en) | 1999-01-15 | 1999-04-29 | Deposition of copper on an activated surface of a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE276382T1 true ATE276382T1 (en) | 2004-10-15 |
Family
ID=26153848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99870243T ATE276382T1 (en) | 1999-01-15 | 1999-11-30 | DEPOSITION OF COPPER ON AN ACTIVATED SURFACE OF A SUBSTRATE |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4343366B2 (en) |
| AT (1) | ATE276382T1 (en) |
| DE (1) | DE69920157T2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6663915B2 (en) * | 2000-11-28 | 2003-12-16 | Interuniversitair Microelektronica Centrum | Method for copper plating deposition |
-
1999
- 1999-11-30 DE DE69920157T patent/DE69920157T2/en not_active Expired - Lifetime
- 1999-11-30 AT AT99870243T patent/ATE276382T1/en not_active IP Right Cessation
- 1999-12-14 JP JP35508299A patent/JP4343366B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000204481A (en) | 2000-07-25 |
| DE69920157D1 (en) | 2004-10-21 |
| DE69920157T2 (en) | 2005-10-20 |
| JP4343366B2 (en) | 2009-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |