ATE164704T1 - Verfahren zur herstellung eines vertikalen pnp- vielfachkollektortransistors - Google Patents

Verfahren zur herstellung eines vertikalen pnp- vielfachkollektortransistors

Info

Publication number
ATE164704T1
ATE164704T1 AT89300902T AT89300902T ATE164704T1 AT E164704 T1 ATE164704 T1 AT E164704T1 AT 89300902 T AT89300902 T AT 89300902T AT 89300902 T AT89300902 T AT 89300902T AT E164704 T1 ATE164704 T1 AT E164704T1
Authority
AT
Austria
Prior art keywords
vertical
pnp transistor
regions
collectors
producing
Prior art date
Application number
AT89300902T
Other languages
English (en)
Inventor
Piccolo Giovanni Giannella
Original Assignee
Exar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exar Corp filed Critical Exar Corp
Application granted granted Critical
Publication of ATE164704T1 publication Critical patent/ATE164704T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
AT89300902T 1988-02-11 1989-01-31 Verfahren zur herstellung eines vertikalen pnp- vielfachkollektortransistors ATE164704T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/154,832 US5023194A (en) 1988-02-11 1988-02-11 Method of making a multicollector vertical pnp transistor

Publications (1)

Publication Number Publication Date
ATE164704T1 true ATE164704T1 (de) 1998-04-15

Family

ID=22552990

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89300902T ATE164704T1 (de) 1988-02-11 1989-01-31 Verfahren zur herstellung eines vertikalen pnp- vielfachkollektortransistors

Country Status (6)

Country Link
US (1) US5023194A (de)
EP (1) EP0328286B1 (de)
JP (1) JPH025564A (de)
KR (1) KR890013783A (de)
AT (1) ATE164704T1 (de)
DE (1) DE68928627D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3145694B2 (ja) * 1990-08-28 2001-03-12 日本電気株式会社 半導体装置
US5447766A (en) * 1990-09-28 1995-09-05 Nissei Asb Machine Co., Ltd. Plastic vessel preform and mold for forming the same
US5311054A (en) * 1991-03-25 1994-05-10 Harris Corporation Graded collector for inductive loads
US5248624A (en) * 1991-08-23 1993-09-28 Exar Corporation Method of making isolated vertical pnp transistor in a complementary bicmos process with eeprom memory
CA2165871C (en) * 1994-12-30 2002-03-26 Tadayoshi Takashima Parison forming apparatus and parison forming method
US5633180A (en) * 1995-06-01 1997-05-27 Harris Corporation Method of forming P-type islands over P-type buried layer
US5763835A (en) * 1995-11-01 1998-06-09 Raychem Corporation Gel-filled closure
US6365447B1 (en) * 1998-01-12 2002-04-02 National Semiconductor Corporation High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth
CN102496626B (zh) * 2011-12-30 2014-03-26 清华大学 锗硅异质结双极晶体管结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3488564A (en) * 1968-04-01 1970-01-06 Fairchild Camera Instr Co Planar epitaxial resistors
US3665266A (en) * 1970-12-10 1972-05-23 Motorola Inc Low saturation resistance,low offset voltage,monolithic analog switch
GB1298053A (en) * 1971-03-26 1972-11-29 Jury Nikolaevich Dyakov Semiconductor device for a trigger storage cell
JPS5942463B2 (ja) * 1972-09-22 1984-10-15 ソニー株式会社 半導体集積回路装置
US4038680A (en) * 1972-12-29 1977-07-26 Sony Corporation Semiconductor integrated circuit device
JPS524787A (en) * 1975-07-01 1977-01-14 Nec Corp Transistor containing embedded base
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
US4458158A (en) * 1979-03-12 1984-07-03 Sprague Electric Company IC Including small signal and power devices
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
JPS5823471A (ja) * 1981-08-05 1983-02-12 Toshiba Corp 半導体装置
JPS5967670A (ja) * 1982-10-12 1984-04-17 Toshiba Corp 半導体装置
FR2543739B1 (fr) * 1983-03-30 1986-04-18 Radiotechnique Compelec Procede de realisation d'un transistor bipolaire haute tension
JPS60149163A (ja) * 1984-01-17 1985-08-06 Nec Corp 半導体装置
DE3586341T2 (de) * 1984-02-03 1993-02-04 Advanced Micro Devices Inc Bipolartransistor mit in schlitzen gebildeten aktiven elementen.

Also Published As

Publication number Publication date
EP0328286A2 (de) 1989-08-16
JPH025564A (ja) 1990-01-10
US5023194A (en) 1991-06-11
EP0328286A3 (de) 1990-06-20
EP0328286B1 (de) 1998-04-01
DE68928627D1 (de) 1998-05-07
KR890013783A (ko) 1989-09-26

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties