WO2024108721A1 - High-speed measurement method and device for three-dimensional surface topography of wafer - Google Patents
High-speed measurement method and device for three-dimensional surface topography of wafer Download PDFInfo
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- G—PHYSICS
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- the present invention relates to the field of wafer detection, and in particular to a method and device for high-speed measurement of three-dimensional surface morphology of a wafer.
- the wafer surface is a three-dimensional complex structure composed of microscopic structural units.
- the production and manufacturing of wafers has the characteristics of nanoscale, difficult direct contact, microscopic surface effects, large positioning error, dust or foreign matter interfering with measurement results, and large optical diffraction. While measuring parameters such as surface contour, geometric dimensions and position deviation, high lateral resolution (2-4 ⁇ m) and longitudinal resolution (200nm) are also required. Therefore, the three-dimensional measurement of the wafer surface has always been a local morphology observation, and it has always faced the practical problem that accuracy and efficiency cannot be taken into account at the same time. It is impossible to achieve high-precision, high-efficiency and complete scanning measurement of the three-dimensional morphology of the wafer surface. A high-speed scanning method and device are urgently needed to solve the problem of three-dimensional measurement of the wafer surface.
- the present invention provides a method and device for high-speed measurement of the three-dimensional morphology of a wafer surface, which collects three-dimensional morphology data of the wafer at multiple angles and radii, analyzes and processes the wafer to be measured to obtain measurement results.
- the present invention provides a high-speed measurement method for three-dimensional surface topography of a wafer, comprising:
- the pre-measurement setting of the optical measurement module includes:
- the wafer to be tested is arranged directly below the optical measurement module, and the vertical distance between the wafer to be tested and the optical measurement module corresponds to the measuring range of the optical measurement module.
- the collecting of the surface reflected light strip data of the wafer to be tested and solving the XZ coordinate value corresponding to the current light curtain line comprises:
- the XZ coordinate value corresponding to the current light curtain line of the wafer to be tested is obtained;
- the X coordinate is the coordinate value along the light curtain line
- the Z direction is the distance value relative to the reference plane.
- the step of acquiring the two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain the initial three-dimensional topography information of the wafer to be measured at the current rotation radius comprises:
- the three-dimensional information ( xi , yi , zi ) of the wafer to be measured at the current rotation radius is obtained by using the measurement data ( xi , yi ) corresponding to the current rotation angle under the same radius as the initial three-dimensional shape information of the wafer to be measured at the current rotation radius.
- the initial three-dimensional morphology information of the wafer to be tested is converted based on a cylindrical coordinate system and then spliced to obtain the three-dimensional morphology information of the surface of the wafer to be tested, including:
- the initial three-dimensional morphology information ( xi , yi , z ) of the wafer to be measured corresponding to the optical measurement module is converted into a cylindrical coordinate system based on the axis of rotation of the wafer to be measured to obtain the basic three-dimensional morphology information (r, ⁇ , z) of the wafer to be measured;
- the basic three-dimensional morphological information (r, ⁇ , z) of the wafer to be tested corresponding to different gyration radii is spliced to obtain the three-dimensional morphological information of the wafer surface to be tested.
- the present invention also provides a high-speed measurement device for three-dimensional surface morphology of a wafer, comprising a marble base, a motion module and a stage assembly, wherein the motion module is arranged on the marble base;
- the motion module includes a high-precision air-floating motion X-axis, a high-precision air-floating motion Y-axis, a high-precision motion Z-axis, a high-precision air-floating rotary C-axis and an optical measurement module.
- the high-precision air-floating motion X-axis and the high-precision air-floating motion Y-axis are cross-stacked and arranged on a marble base.
- a high-precision air-floating rotary C-axis is arranged above the high-precision air-floating motion X-axis and the high-precision air-floating motion Y-axis.
- the high-precision motion Z-axis is arranged on a marble gantry.
- the stage assembly is arranged above the high-precision air-floating rotary C-axis and is connected to the high-precision air-floating rotary C-axis via a tilt adjustment assembly.
- the optical measurement module is a high-precision and high-sampling rate three-dimensional line sensor.
- the present invention has the following beneficial effects:
- a one-time rotary scanning measurement is performed on the surface of the wafer to be measured at a sampling interval lower than the lateral resolution requirement, effectively solving the problem of high-precision and complete scanning measurement of the three-dimensional morphology of the wafer surface.
- the software and hardware have a high degree of automation integration, which can realize offline batch measurement of the three-dimensional morphology of the wafer surface, and can also be integrated into the production line to realize online high-speed detection of the three-dimensional morphology of the wafer surface.
- FIG1 is a flow chart of a high-speed measurement method for three-dimensional surface topography of a wafer provided by the present invention
- FIG2 is a main schematic diagram of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention
- FIG3 is a detailed schematic diagram of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention.
- FIG. 4 is a measurement flow chart of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention
- FIG. 5 is a schematic diagram of a concentric circle scanning measurement path of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention
- FIG. 6 is a schematic diagram of a spiral scanning measurement path of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention
- FIG. 7 is a schematic diagram of a centrifugal arc grid scanning measurement path of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention.
- FIG. 8 is a schematic diagram showing the time consumption calculation principle of a centrifugal arc raster scanning measurement of a wafer surface three-dimensional high-speed measurement device provided by the present invention
- Embodiment 1 is a diagrammatic representation of Embodiment 1:
- the present invention provides a high-speed measurement method for three-dimensional surface morphology of a wafer, as shown in FIG1 , comprising:
- a high-speed measurement method for three-dimensional surface morphology of a wafer is provided.
- the optical measurement module is carried by the motion module and displaced to above the wafer to be measured.
- the vertical spacing between the optical measurement modules satisfies the measurement range of the optical measurement module.
- S1 specifically includes:
- S2 specifically includes:
- the X coordinate is the coordinate value along the light curtain line
- the Z direction is the distance value relative to the reference plane calculated by the optical measurement module.
- S3 specifically includes:
- a method for high-speed measurement of three-dimensional morphology of a wafer surface is provided.
- the wafer to be measured is a circular sheet structure. Therefore, a rotational/near-rotational scanning mode can be set according to its structural characteristics.
- the wafer to be measured is carried by the high-precision air-floating rotary C-axis to perform rotational motion. Every time the motion module rotates a fixed degree ⁇ , the encoder triggers the optical measurement module once to collect and record a measurement data ( xi , zi ), thereby realizing equal-interval collection and recording of the three-dimensional information ( xi , yi , zi ) of the surface of the wafer to be measured at the current rotation radius position.
- a high-speed measurement method for three-dimensional topography of a wafer surface wherein the three-dimensional scanning measurement area between adjacent rotation radius positions in the wafer to be measured has a certain overlap range, and the calculation formula of the overlap range is as follows:
- k is the overlapping range
- L is the measurement line width of the sensor
- ri is the gyration radius of the wafer to be measured
- ri+1 is the next gyration radius adjacent to the gyration radius of the wafer to be measured.
- S5 specifically includes:
- Embodiment 2 is a diagrammatic representation of Embodiment 1:
- the present invention provides a high-speed measurement device for three-dimensional surface morphology of a wafer, as shown in FIG2 , comprising a marble base 4, a motion module and a stage assembly 8, wherein the marble base 4 is provided with a motion module; as shown in FIG3 , the motion module comprises a high-precision air-floating motion X-axis 5, a high-precision air-floating motion Y-axis 6, a high-precision motion Z-axis 10, a high-precision air-floating rotary C-axis 7 and an optical measurement module 2, wherein the high-precision air-floating motion X-axis 5 and the high-precision air-floating motion Y-axis 6 are cross-stacked and arranged on the marble base 4, a high-precision air-floating rotary C-axis 7 is arranged above the high-precision air-floating motion X-axis 5 and the high-precision air-floating motion Y-axis 6, and the high-precision motion Z-axi
- Embodiment 3 is a diagrammatic representation of Embodiment 3
- the present invention provides a practical application method for high-speed measurement of three-dimensional surface morphology of a wafer, comprising:
- Step 1 The optical measurement module is carried by the motion module and displaced to above the wafer to be measured, and the vertical spacing thereof meets the measurement range of the optical measurement module.
- Step 2 The optical measurement module projects the measurement light curtain line to the surface of the wafer to be measured, and the surface of the wafer to be measured reflects the light strip information back to the optical measurement module. Based on the optical detection method of the light strip energy extraction technology under the pixel, the pixel wavelength is accurately mapped to the distance between the object to be measured and the sensor, and the relative Z-direction height value of the surface of the wafer to be measured under the current light curtain line coverage is calculated and reconstructed to obtain the XZ coordinate value of the surface of the wafer to be measured under the current light curtain line coverage.
- the X coordinate is the coordinate value along the light curtain line
- the Z direction is the distance value relative to the reference plane solved by the optical measurement module.
- Step 3 The wafer to be tested is a circular sheet structure, so a rotational/near-rotational scanning mode can be set according to its structural characteristics.
- the wafer to be tested is carried by the high-precision air-floating rotary C-axis for rotational motion. Every time the motion module rotates a fixed degree ⁇ , the encoder triggers the optical measurement module to collect and record a measurement data ( xi , zi ), thereby realizing equal-interval collection and recording of the three-dimensional information ( xi , yi , zi ) of the surface of the wafer to be tested at the current rotation radius position.
- Step 4 The rotational motion of the high-precision air-floating rotation C-axis in the motion module cooperates with the horizontal motion of the high-precision air-floating motion XY-axis to achieve three-dimensional scanning measurement at different rotation radii ri positions in the wafer to be measured.
- the three-dimensional scanning measurement areas between adjacent gyration radius positions in the wafer to be measured have a certain overlapping range, and the overlapping range is [L-( ri +1- ri )]/L ⁇ 100%, where L is the measurement line width of the optical sensor.
- Step 5 Repeat steps 2 to 4 to unify the measurement data (x, y, z) of the optical measurement module in the Cartesian coordinate system around the rotation axis of the high-precision air-floating rotary C-axis to the cylindrical coordinate system (r, ⁇ , z), and splice and combine the scanning data at different radii to obtain complete three-dimensional morphology information of the surface of the wafer to be measured.
- Embodiment 4 is a diagrammatic representation of Embodiment 4:
- the present invention provides a method for measuring a wafer surface three-dimensional topography high-speed measuring device, as shown in FIG4 , comprising:
- the wafer 3 to be measured is first loaded onto the stage assembly 8 by an automated loading device.
- Automatic measurement path planning is set based on the motion module carrying the wafer to be measured 3 and the optical measurement module 2.
- the specific steps are: first, parameters are set according to the wafer geometric size, the line width of the optical measurement module and the overlapping range, and then the path type is selected to determine the rotary scanning measurement path of the motion module in the measurement system.
- the specific path is introduced in the example.
- rotational wafer scanning measurement paths can be set. Limited by the line width and length of the optical measurement module, multiple rotational grid scans are required to achieve complete scanning and measurement of the three-dimensional morphology of the wafer surface. In order to ensure high-speed scanning and measurement of the three-dimensional morphology of the wafer surface, reducing the number of scanning traversals and the scanning arc length can effectively reduce the time consumption of a complete three-dimensional scan of a single wafer. Therefore, good wafer measurement path planning is crucial for efficient scanning and measurement. Specific examples are as follows:
- the classic concentric circle grid rotation scanning measurement method uses scanning drive lines 14 of different radii concentric circles to perform surface three-dimensional morphology scanning measurement on the wafer 3 to be measured.
- the time taken for the complete scanning measurement is:
- R i R - (R / ⁇ x 1 - i) ⁇ x 1
- R is the radius of the wafer 3 to be measured
- ⁇ P is the spacing of the optical measurement module 2 in the scanning driving line direction
- L is the scanning line width of the optical measurement module
- ⁇ x1 is the lateral spacing of the scanning lines of the optical measurement module
- ⁇ x1 ⁇ L is the scanning speed of the optical measurement module 2
- i is the number of scanning circles.
- the concentric circle grid rotation scanning measurement method requires a complete scan of the maximum outer diameter of the wafer 3 to be tested, which takes a long time. Therefore, in order to reduce the scanning time, a spiral line scanning driving line method is used to perform surface three-dimensional morphology scanning measurement on the wafer 3 to be tested, as shown in Figure 6.
- the total time for the complete scanning measurement is:
- R i R - (R / ⁇ x 2 - i) ⁇ x 2
- R is the radius of the wafer 3 to be measured
- ⁇ P is the spacing in the scanning driving line direction of the optical measurement module
- ⁇ x2 is the lateral spacing of the scanning lines of the optical measurement module
- v is the scanning speed of the optical measurement module
- i is the number of scanning circles.
- the time consumption of the wafer spiral scanning driving line method is the scanning time of the circumference of the lower half circle of radius i ⁇ x 2.
- the wafer spiral scanning driving line method significantly reduces the time consumption of scanning the maximum outer diameter of the wafer 3 to be measured. Therefore, under the same measurement conditions, the time consumption of the wafer spiral scanning driving line method is better than that of the concentric circle grid rotation scanning measurement method.
- the present disclosure proposes a new centrifugal arc grid scanning method to perform surface three-dimensional morphology scanning and measurement on the wafer 3 to be tested, as shown in FIG8.
- the specific centrifugal arc grid scanning measurement time consumption calculation principle is shown in FIG7.
- the centrifugal arc grid scanning measurement time consumption is the scanning time of the arc length under each i ⁇ x 1 radius.
- the total time of the complete scanning measurement is:
- R is the radius of the wafer 3 to be measured
- ⁇ P is the spacing in the scanning driving line direction of the optical measurement module 2
- ⁇ x1 is the lateral spacing of the scanning lines of the optical measurement module 2
- v is the scanning speed of the optical measurement module 2
- i is the number of scanning circles
- L is the scanning line width of the optical measurement module 2
- L1 is the centrifugal amount of the centrifugal arc grid scanning method
- ⁇ AO2E is the degree of the center angle of the arc length AE
- ⁇ AO2O1 is the external angle of ⁇ AO2B .
- the optical measurement module 2 uses the centrifugal arc grid scanning method to traverse the entire wafer 3 to be measured, and the time consumed is the scanning time under each (2R-i ⁇ x 1 ) arc length.
- the total length of the centrifugal arc grid arc length is less than the sum of the circumferences of the (i ⁇ x 2 ) semicircles in the spiral line scanning drive line in Example 2. Therefore, under the same measurement conditions, the proposed wafer centrifugal arc grid scanning method consumes more time than the spiral line scanning drive line method.
- the wafer centrifugal arc grid scanning method disclosed in this example can achieve high-efficiency scanning of the complete three-dimensional morphology of the wafer surface under the premise of ensuring the optical measurement module 2 with a measurement accuracy of hundreds of nanometers.
- embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.
- computer-usable storage media including but not limited to disk storage, CD-ROM, optical storage, etc.
- each process and/or box in the flowchart and/or block diagram, as well as the combination of the process and/or box in the flowchart and/or block diagram can be implemented by computer program instructions.
- These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device produce a device for implementing the function specified in one process or multiple processes in the flowchart and/or one box or multiple boxes in the block diagram.
- These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device that implements the functions specified in one or more processes in the flowchart and/or one or more boxes in the block diagram.
- These computer program instructions may also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, whereby the instructions executed on the computer or other programmable device provide steps for implementing the functions specified in one or more processes in the flowchart and/or one or more boxes in the block diagram.
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Abstract
A high-speed measurement method for the three-dimensional surface topography of a wafer, comprising: projecting a light curtain ray to a wafer under test, then collecting surface reflected light strip data of said wafer for calculating the XZ coordinate values corresponding to the current light curtain ray, and using the XZ coordinate values as two-dimensional measurement data (S2); collecting two-dimensional measurement data of said wafer at different rotation angles to obtain initial three-dimensional topography information of said wafer at the current rotation radius (S3); collecting initial three-dimensional topography information of said wafer corresponding to different rotation radii of said wafer (S4); and converting the initial three-dimensional topography information of said wafer on the basis of a cylindrical coordinate system, and then performing splicing processing to obtain three-dimensional surface topography information of said wafer (S5). Further disclosed is a high-speed measurement device for the three-dimensional surface topography of a wafer. Difficulties in high-precision complete scanning measurement for the three-dimensional surface topography of wafers are effectively solved, the automation integration level is high in terms of software and hardware, offline batch measurement for the three-dimensional surface topography of wafers can be achieved, and online high-speed measurement for the three-dimensional surface topography of wafers can also be achieved by means of integration to a production line.
Description
本发明涉及晶圆检测领域，具体涉及一种晶圆表面三维形貌高速测量方法及装置。The present invention relates to the field of wafer detection, and in particular to a method and device for high-speed measurement of three-dimensional surface morphology of a wafer.
表面三维数据因能更全面、更真实地反映零件表面的特征及评价表面加工质量而越来越受到重视，通过对三维形貌的测量可以比较全面地评定零件表面质量的优劣，进而确认加工方法的好坏及设计要求的合理性，进而指导加工、优化加工工艺以加工出高质量的零件表面，确保其使用功能的实现。Surface three-dimensional data is gaining more and more attention because it can more comprehensively and truly reflect the characteristics of the part surface and evaluate the surface processing quality. By measuring the three-dimensional morphology, the quality of the part surface can be evaluated more comprehensively, and then the quality of the processing method and the rationality of the design requirements can be confirmed, and then the processing can be guided and the processing technology can be optimized to produce high-quality part surfaces and ensure the realization of their functional functions.
晶圆表面是由微观结构单元组成的三维复杂结构，晶圆的生产制造具有纳米尺度、难以直接接触、微观表面效应、定位误差影响大、灰尘或异物干扰测量结果及光学衍射影响大等特点。在测量表面轮廓、几何尺寸和位置偏差等参数的同时，还要求有较高的横向分辨率(2-4μm)和纵向分辨率(200nm)。因此晶圆表面三维测量一直以来都是局部形貌观测，始终面临着精度和效率无法兼顾的现实问题，无法实现晶圆表面三维形貌高精度高效率完整扫描测量，亟需一种高速扫描方法及装置解决晶圆表面三维测量难题。The wafer surface is a three-dimensional complex structure composed of microscopic structural units. The production and manufacturing of wafers has the characteristics of nanoscale, difficult direct contact, microscopic surface effects, large positioning error, dust or foreign matter interfering with measurement results, and large optical diffraction. While measuring parameters such as surface contour, geometric dimensions and position deviation, high lateral resolution (2-4μm) and longitudinal resolution (200nm) are also required. Therefore, the three-dimensional measurement of the wafer surface has always been a local morphology observation, and it has always faced the practical problem that accuracy and efficiency cannot be taken into account at the same time. It is impossible to achieve high-precision, high-efficiency and complete scanning measurement of the three-dimensional morphology of the wafer surface. A high-speed scanning method and device are urgently needed to solve the problem of three-dimensional measurement of the wafer surface.
发明内容Summary of the invention
针对现有技术的不足，本发明提供了一种晶圆表面三维形貌高速测量方法及装置，通过采集多角度多半径的晶圆三维形貌数据，对待测晶圆进行分析处理获取测量结果。In view of the deficiencies in the prior art, the present invention provides a method and device for high-speed measurement of the three-dimensional morphology of a wafer surface, which collects three-dimensional morphology data of the wafer at multiple angles and radii, analyzes and processes the wafer to be measured to obtain measurement results.
为实现上述目的，本发明提供了一种晶圆表面三维形貌高速测量方法，包括：To achieve the above object, the present invention provides a high-speed measurement method for three-dimensional surface topography of a wafer, comprising:
S1、对光学测量模块进行测量前设置；S1. Setting up the optical measurement module before measurement;
S2、利用光学测量模块对应的光幕线投射至待测晶圆后，采集待测晶圆的表面反射光条数据解算得到与当前光幕线对应的XZ坐标值，利用所述XZ坐标值作为二维测量数据；S2, after projecting the light curtain line corresponding to the optical measurement module onto the wafer to be measured, collecting the surface reflected light strip data of the wafer to be measured and solving to obtain the XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as the two-dimensional measurement data;
S3、采集待测晶圆不同回转角度的二维测量数据后得到当前回转半径的待测晶圆初始三维形貌信息；S3, acquiring the two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain the initial three-dimensional morphology information of the wafer to be measured at the current rotation radius;
S4、采集待测晶圆不同回转半径对应的待测晶圆初始三维形貌信息；S4, collecting initial three-dimensional morphology information of the wafer to be tested corresponding to different rotation radii of the wafer to be tested;
S5、利用所述待测晶圆初始三维形貌信息基于圆柱坐标系转换后，进行拼接处理得到待测晶圆表面三维形貌信息。S5, using the initial three-dimensional morphology information of the wafer to be measured to convert it based on a cylindrical coordinate system, and then performing splicing processing to obtain the three-dimensional morphology information of the surface of the wafer to be measured.
优选的，所述对光学测量模块进行测量前设置包括：Preferably, the pre-measurement setting of the optical measurement module includes:
将待测晶圆设置于光学测量模块的正下方，所述待测晶圆与光学测量模块的竖直方向间距与光学测量模块量程对应。The wafer to be tested is arranged directly below the optical measurement module, and the vertical distance between the wafer to be tested and the optical measurement module corresponds to the measuring range of the optical measurement module.
优选的，所述采集待测晶圆的表面反射光条数据解算得到与当前光幕线对应的XZ坐标 值包括：Preferably, the collecting of the surface reflected light strip data of the wafer to be tested and solving the XZ coordinate value corresponding to the current light curtain line comprises:
利用待测晶圆的表面反射光条数据基于像素下光条能量提取技术的光学检测方法得到当前光幕线对应的待测晶圆表面的相对Z向高度值后，获取待测晶圆当前光幕线对应的XZ坐标值；After obtaining the relative Z-direction height value of the surface of the wafer to be tested corresponding to the current light curtain line using the surface reflected light strip data of the wafer to be tested and the optical detection method based on the light strip energy extraction technology under the pixel, the XZ coordinate value corresponding to the current light curtain line of the wafer to be tested is obtained;
其中，X坐标为沿光幕线方向坐标值，Z向为解算相对基准面的距离值。Among them, the X coordinate is the coordinate value along the light curtain line, and the Z direction is the distance value relative to the reference plane.
优选的，所述采集待测晶圆不同回转角度的二维测量数据后得到当前回转半径的待测晶圆初始三维形貌信息包括：Preferably, the step of acquiring the two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain the initial three-dimensional topography information of the wafer to be measured at the current rotation radius comprises:
当待测晶圆每回转固定度数θ时，则采集当前回转角度对应的测量数据(x
i,z
i)；
When the wafer to be measured rotates a fixed degree θ each time, the measurement data (x i , z i ) corresponding to the current rotation angle is collected;
利用相同半径下当前回转角度对应的测量数据(x
i,z
i)得到待测晶圆在当前回转半径的三维信息(x
i,y
i,z
i)作为当前回转半径的待测晶圆初始三维形貌信息。
The three-dimensional information ( xi , yi , zi ) of the wafer to be measured at the current rotation radius is obtained by using the measurement data ( xi , yi ) corresponding to the current rotation angle under the same radius as the initial three-dimensional shape information of the wafer to be measured at the current rotation radius.
优选的，利用所述待测晶圆初始三维形貌信息基于圆柱坐标系转换后，进行拼接处理得到待测晶圆表面三维形貌信息包括：Preferably, the initial three-dimensional morphology information of the wafer to be tested is converted based on a cylindrical coordinate system and then spliced to obtain the three-dimensional morphology information of the surface of the wafer to be tested, including:
将光学测量模块对应的待测晶圆初始三维形貌信息(x
i,y
i,z
i)基于待测晶圆回转轴的轴心线进行圆柱坐标系转换得到待测晶圆基础三维形貌信息(r,θ,z)；
The initial three-dimensional morphology information ( xi , yi , z ) of the wafer to be measured corresponding to the optical measurement module is converted into a cylindrical coordinate system based on the axis of rotation of the wafer to be measured to obtain the basic three-dimensional morphology information (r, θ, z) of the wafer to be measured;
利用不同回转半径对应的待测晶圆基础三维形貌信息(r,θ,z)进行拼接处理得到待测晶圆表面三维形貌信息。The basic three-dimensional morphological information (r, θ, z) of the wafer to be tested corresponding to different gyration radii is spliced to obtain the three-dimensional morphological information of the wafer surface to be tested.
基于同一发明构思，本发明还提供了一种晶圆表面三维形貌高速测量装置，包括大理石基座、运动模组和载物台组件，所述大理石基座上设置有运动模组；Based on the same inventive concept, the present invention also provides a high-speed measurement device for three-dimensional surface morphology of a wafer, comprising a marble base, a motion module and a stage assembly, wherein the motion module is arranged on the marble base;
所述运动模组包括高精度气浮运动X轴、高精度气浮运动Y轴、高精度运动Z轴、高精度气浮回转C轴与光学测量模块，所述高精度气浮运动X轴、高精度气浮运动Y轴呈十字交叉堆叠设置于大理石基座上，所述高精度气浮运动X轴、高精度气浮运动Y轴上方设置有高精度气浮回转C轴，所述高精度运动Z轴设置于大理石龙门上；The motion module includes a high-precision air-floating motion X-axis, a high-precision air-floating motion Y-axis, a high-precision motion Z-axis, a high-precision air-floating rotary C-axis and an optical measurement module. The high-precision air-floating motion X-axis and the high-precision air-floating motion Y-axis are cross-stacked and arranged on a marble base. A high-precision air-floating rotary C-axis is arranged above the high-precision air-floating motion X-axis and the high-precision air-floating motion Y-axis. The high-precision motion Z-axis is arranged on a marble gantry.
所述载物台组件设置于高精度气浮回转C轴的上方，并通过倾斜调整组件与高精度气浮回转C轴连接。The stage assembly is arranged above the high-precision air-floating rotary C-axis and is connected to the high-precision air-floating rotary C-axis via a tilt adjustment assembly.
优选的，所述光学测量模块为高精度高采样率三维线传感器。Preferably, the optical measurement module is a high-precision and high-sampling rate three-dimensional line sensor.
与最接近的现有技术相比，本发明具有的有益效果：Compared with the closest prior art, the present invention has the following beneficial effects:
通过高精度高采样率三维线传感器，低于横向分辨率要求的采样间隔对所述待测晶圆表面进行一次性回转类扫描测量，有效解决晶圆表面三维形貌高精度完整扫描测量难题，软硬件方面自动化集成度较高，可实现离线晶圆表面三维形貌批量测量，也可以集成到产线实现在线晶圆表面三维形貌高速检测。Through the use of high-precision and high-sampling rate three-dimensional line sensors, a one-time rotary scanning measurement is performed on the surface of the wafer to be measured at a sampling interval lower than the lateral resolution requirement, effectively solving the problem of high-precision and complete scanning measurement of the three-dimensional morphology of the wafer surface. The software and hardware have a high degree of automation integration, which can realize offline batch measurement of the three-dimensional morphology of the wafer surface, and can also be integrated into the production line to realize online high-speed detection of the three-dimensional morphology of the wafer surface.
图1是本发明提供的一种晶圆表面三维形貌高速测量方法流程图；FIG1 is a flow chart of a high-speed measurement method for three-dimensional surface topography of a wafer provided by the present invention;
图2是本发明提供的一种晶圆表面三维形貌高速测量装置主示意图；FIG2 is a main schematic diagram of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention;
图3是本发明提供的一种晶圆表面三维形貌高速测量装置详细示意图；FIG3 is a detailed schematic diagram of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention;
图4是本发明提供的一种晶圆表面三维形貌高速测量装置的测量使用流程图；4 is a measurement flow chart of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention;
图5是本发明提供的一种晶圆表面三维形貌高速测量装置同心圆扫描测量路径示意图；5 is a schematic diagram of a concentric circle scanning measurement path of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention;
图6是本发明提供的一种晶圆表面三维形貌高速测量装置螺旋线扫描测量路径示意图；6 is a schematic diagram of a spiral scanning measurement path of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention;
图7是本发明提供的一种晶圆表面三维形貌高速测量装置离心圆弧栅格扫描测量路径示意图；7 is a schematic diagram of a centrifugal arc grid scanning measurement path of a high-speed measurement device for three-dimensional surface topography of a wafer provided by the present invention;
图8是本发明提供的一种晶圆表面三维形貌高速测量装置离心圆弧栅格扫描测量耗时计算原理图；8 is a schematic diagram showing the time consumption calculation principle of a centrifugal arc raster scanning measurement of a wafer surface three-dimensional high-speed measurement device provided by the present invention;
附图标记：Reference numerals:
1、大理石龙门；2、光学测量模块；3、待测晶圆；4、大理石基座；5、高精度气浮运动X轴；6、高精度气浮运动Y轴；7、高精度气浮回转C轴；8、载物台组件；9、倾斜调整组件；10、高精度运动Z轴；11、第一圈扫描线宽示意；12、第二圈扫描线宽示意；13、扫描间距示意；14、扫描驱动线示意；15、单次扫描线宽示意。1. Marble gantry; 2. Optical measurement module; 3. Wafer to be measured; 4. Marble base; 5. High-precision air-floating motion X-axis; 6. High-precision air-floating motion Y-axis; 7. High-precision air-floating rotary C-axis; 8. Stage assembly; 9. Tilt adjustment assembly; 10. High-precision motion Z-axis; 11. Schematic diagram of the first scanning line width; 12. Schematic diagram of the second scanning line width; 13. Schematic diagram of scanning spacing; 14. Schematic diagram of scanning drive lines; 15. Schematic diagram of single scanning line width.
下面结合附图对本发明的具体实施方式作进一步的详细说明。The specific implementation modes of the present invention will be further described in detail below in conjunction with the accompanying drawings.
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
实施例1：Embodiment 1:
本发明提供了一种晶圆表面三维形貌高速测量方法，如图1所示，包括：The present invention provides a high-speed measurement method for three-dimensional surface morphology of a wafer, as shown in FIG1 , comprising:
S1、对光学测量模块进行测量前设置；S1. Setting up the optical measurement module before measurement;
S2、利用光学测量模块对应的光幕线投射至待测晶圆后，采集待测晶圆的表面反射光条数据解算得到与当前光幕线对应的XZ坐标值，利用所述XZ坐标值作为二维测量数据；S2, after projecting the light curtain line corresponding to the optical measurement module onto the wafer to be measured, collecting the surface reflected light strip data of the wafer to be measured and solving to obtain the XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as the two-dimensional measurement data;
S3、采集待测晶圆不同回转角度的二维测量数据后得到当前回转半径的待测晶圆初始三维形貌信息；S3, acquiring the two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain the initial three-dimensional morphology information of the wafer to be measured at the current rotation radius;
S4、采集待测晶圆不同回转半径对应的待测晶圆初始三维形貌信息；S4, collecting initial three-dimensional morphology information of the wafer to be tested corresponding to different rotation radii of the wafer to be tested;
S5、利用所述待测晶圆初始三维形貌信息基于圆柱坐标系转换后，进行拼接处理得到待测晶圆表面三维形貌信息。S5, using the initial three-dimensional morphology information of the wafer to be measured to convert it based on a cylindrical coordinate system, and then performing splicing processing to obtain the three-dimensional morphology information of the surface of the wafer to be measured.
本实施例中，一种晶圆表面三维形貌高速测量方法，所述光学测量模块由所述运动模组搭载位移运动到所述待测晶圆上方，其竖直方向间距满足所述光学测量模块的测量量程。In this embodiment, a high-speed measurement method for three-dimensional surface morphology of a wafer is provided. The optical measurement module is carried by the motion module and displaced to above the wafer to be measured. The vertical spacing between the optical measurement modules satisfies the measurement range of the optical measurement module.
S1具体包括：S1 specifically includes:
S1-1、将待测晶圆设置于光学测量模块的正下方，所述待测晶圆与光学测量模块的竖直方向间距与光学测量模块量程对应。S1-1. Place a wafer to be measured directly below an optical measurement module, wherein a vertical distance between the wafer to be measured and the optical measurement module corresponds to a measuring range of the optical measurement module.
S2具体包括：S2 specifically includes:
S2-1、利用待测晶圆的表面反射光条数据基于像素下光条能量提取技术的光学检测方法得到当前光幕线对应的待测晶圆表面的相对Z向高度值后，获取待测晶圆当前光幕线对应的XZ坐标值；S2-1, after obtaining the relative Z-direction height value of the surface of the wafer to be tested corresponding to the current light curtain line by using the surface reflected light strip data of the wafer to be tested based on the optical detection method of the light strip energy extraction technology under the pixel, the XZ coordinate value corresponding to the current light curtain line of the wafer to be tested is obtained;
其中，X坐标为沿光幕线方向坐标值，Z向为所述光学测量模块解算相对基准面的距离值。The X coordinate is the coordinate value along the light curtain line, and the Z direction is the distance value relative to the reference plane calculated by the optical measurement module.
S3具体包括：S3 specifically includes:
S3-1、当待测晶圆每回转固定度数θ时，则采集当前回转角度对应的测量数据(x
i,z
i)；
S3-1, when the wafer to be measured rotates a fixed degree θ each time, the measurement data (x i , z i ) corresponding to the current rotation angle is collected;
S3-2、利用相同半径下当前回转角度对应的测量数据(x
i,z
i)得到待测晶圆在当前回转半径的三维信息(x
i,y
i,z
i)作为当前回转半径的待测晶圆初始三维形貌信息。
S3-2. Using the measurement data ( xi , zi ) corresponding to the current rotation angle at the same radius, obtain the three-dimensional information ( xi , yi , zi ) of the wafer to be measured at the current rotation radius as the initial three-dimensional shape information of the wafer to be measured at the current rotation radius.
本实施例中，一种晶圆表面三维形貌高速测量方法，所述待测晶圆为圆形片体结构，因此根据其结构特征可设定回转/近回转类扫描方式，通过所述高精度气浮回转C轴搭载所述待测晶圆做回转运动，所述运动模组每回转固定度数θ的一次运动，编码器触发一次所述光学测量模块采集记录一条测量数据(x
i,z
i)，实现等间隔采集记录所述待测晶圆表面当前回转半径位置下的三维信息(x
i,y
i,z
i)。
In the present embodiment, a method for high-speed measurement of three-dimensional morphology of a wafer surface is provided. The wafer to be measured is a circular sheet structure. Therefore, a rotational/near-rotational scanning mode can be set according to its structural characteristics. The wafer to be measured is carried by the high-precision air-floating rotary C-axis to perform rotational motion. Every time the motion module rotates a fixed degree θ, the encoder triggers the optical measurement module once to collect and record a measurement data ( xi , zi ), thereby realizing equal-interval collection and recording of the three-dimensional information ( xi , yi , zi ) of the surface of the wafer to be measured at the current rotation radius position.
本实施例中，一种晶圆表面三维形貌高速测量方法，所述待测晶圆中相邻回转半径位置之间的三维扫描测量区域具备一定的重叠范围，该重叠范围的计算式如下：In this embodiment, a high-speed measurement method for three-dimensional topography of a wafer surface is provided, wherein the three-dimensional scanning measurement area between adjacent rotation radius positions in the wafer to be measured has a certain overlap range, and the calculation formula of the overlap range is as follows:
其中，k为重叠范围，L为传感器的测量线宽，r
i为待测晶圆的回转半径，r
i+1为待测晶圆的回转半径的相邻下一回转半径。
Among them, k is the overlapping range, L is the measurement line width of the sensor, ri is the gyration radius of the wafer to be measured, and ri+1 is the next gyration radius adjacent to the gyration radius of the wafer to be measured.
S5具体包括：S5 specifically includes:
S5-1、将光学测量模块对应的待测晶圆初始三维形貌信息(x
i,y
i,z
i)基于待测晶圆回转 轴的轴心线进行圆柱坐标系转换得到待测晶圆基础三维形貌信息(r,θ,z)；
S5-1, converting the initial three-dimensional morphology information ( xi , yi , z ) of the wafer to be measured corresponding to the optical measurement module into a cylindrical coordinate system based on the axis of rotation of the wafer to be measured to obtain basic three-dimensional morphology information (r, θ, z) of the wafer to be measured;
S5-2、利用不同回转半径对应的待测晶圆基础三维形貌信息(r,θ,z)进行拼接处理得到待测晶圆表面三维形貌信息。S5-2. Use the basic three-dimensional morphology information (r, θ, z) of the wafer to be tested corresponding to different radii of gyration to perform splicing processing to obtain the three-dimensional morphology information of the surface of the wafer to be tested.
实施例2：Embodiment 2:
本发明提供了一种晶圆表面三维形貌高速测量装置，如图2所示，包括大理石基座4、运动模组和载物台组件8，所述大理石基座4上设置有运动模组；如图3所示，所述运动模组包括高精度气浮运动X轴5、高精度气浮运动Y轴6、高精度运动Z轴10、高精度气浮回转C轴7与光学测量模块2，所述高精度气浮运动X轴5、高精度气浮运动Y轴6呈十字交叉堆叠设置于大理石基座4上，所述高精度气浮运动X轴5、高精度气浮运动Y轴6上方设置有高精度气浮回转C轴7，所述高精度运动Z轴10设置于大理石龙门1上；所述载物台组件8设置于高精度气浮回转C轴7的上方，并通过倾斜调整组件9与高精度气浮回转C轴7连接；所述光学测量模块2为高精度高采样率三维线传感器。The present invention provides a high-speed measurement device for three-dimensional surface morphology of a wafer, as shown in FIG2 , comprising a marble base 4, a motion module and a stage assembly 8, wherein the marble base 4 is provided with a motion module; as shown in FIG3 , the motion module comprises a high-precision air-floating motion X-axis 5, a high-precision air-floating motion Y-axis 6, a high-precision motion Z-axis 10, a high-precision air-floating rotary C-axis 7 and an optical measurement module 2, wherein the high-precision air-floating motion X-axis 5 and the high-precision air-floating motion Y-axis 6 are cross-stacked and arranged on the marble base 4, a high-precision air-floating rotary C-axis 7 is arranged above the high-precision air-floating motion X-axis 5 and the high-precision air-floating motion Y-axis 6, and the high-precision motion Z-axis 10 is arranged on a marble gantry 1; the stage assembly 8 is arranged above the high-precision air-floating rotary C-axis 7, and is connected to the high-precision air-floating rotary C-axis 7 through a tilt adjustment assembly 9; the optical measurement module 2 is a high-precision and high-sampling rate three-dimensional line sensor.
实施例3：Embodiment 3:
本发明提供了一种晶圆表面三维形貌高速测量实际应用方法，包括：The present invention provides a practical application method for high-speed measurement of three-dimensional surface morphology of a wafer, comprising:
步骤1：所述光学测量模块由所述运动模组搭载位移运动到所述待测晶圆上方，其竖直方向间距满足所述光学测量模块的测量量程。Step 1: The optical measurement module is carried by the motion module and displaced to above the wafer to be measured, and the vertical spacing thereof meets the measurement range of the optical measurement module.
步骤2：所述光学测量模块投射测量光幕线照射到所述待测晶圆表面，所述待测晶圆表面反射光条信息回到所述光学测量模块。基于像素下光条能量提取技术的光学检测方法，将像素波长准确映射到被测物与传感器的距离，解算重构出当前光幕线覆盖下所述待测晶圆表面的相对Z向高度值，获得当前光幕线覆盖下所述待测晶圆表面的XZ坐标值。Step 2: The optical measurement module projects the measurement light curtain line to the surface of the wafer to be measured, and the surface of the wafer to be measured reflects the light strip information back to the optical measurement module. Based on the optical detection method of the light strip energy extraction technology under the pixel, the pixel wavelength is accurately mapped to the distance between the object to be measured and the sensor, and the relative Z-direction height value of the surface of the wafer to be measured under the current light curtain line coverage is calculated and reconstructed to obtain the XZ coordinate value of the surface of the wafer to be measured under the current light curtain line coverage.
其中X坐标为沿光幕线方向坐标值，Z向为所述光学测量模块解算相对基准面的距离值。The X coordinate is the coordinate value along the light curtain line, and the Z direction is the distance value relative to the reference plane solved by the optical measurement module.
步骤3：所述待测晶圆为圆形片体结构，因此根据其结构特征可设定回转/近回转类扫描方式，通过所述高精度气浮回转C轴搭载所述待测晶圆做回转运动，所述运动模组每回转固定度数θ的一次运动，编码器触发一次所述光学测量模块采集记录一条测量数据(x
i,z
i)，实现等间隔采集记录所述待测晶圆表面当前回转半径位置下的三维信息(x
i,y
i,z
i)。
Step 3: The wafer to be tested is a circular sheet structure, so a rotational/near-rotational scanning mode can be set according to its structural characteristics. The wafer to be tested is carried by the high-precision air-floating rotary C-axis for rotational motion. Every time the motion module rotates a fixed degree θ, the encoder triggers the optical measurement module to collect and record a measurement data ( xi , zi ), thereby realizing equal-interval collection and recording of the three-dimensional information ( xi , yi , zi ) of the surface of the wafer to be tested at the current rotation radius position.
步骤4：所述运动模组中的高精度气浮回转C轴的回转运动，配合所述高精度气浮运动XY轴的水平运动，实现所述待测晶圆中不同回转半径r
i位置下的三维扫描测量。
Step 4: The rotational motion of the high-precision air-floating rotation C-axis in the motion module cooperates with the horizontal motion of the high-precision air-floating motion XY-axis to achieve three-dimensional scanning measurement at different rotation radii ri positions in the wafer to be measured.
其中，所述待测晶圆中相邻回转半径位置之间的三维扫描测量区域具备一定的重叠范围，该重叠范围为[L-(r
i+1-r
i)]/L×100％，L为所述光学传感器的测量线宽。
The three-dimensional scanning measurement areas between adjacent gyration radius positions in the wafer to be measured have a certain overlapping range, and the overlapping range is [L-( ri +1- ri )]/L×100%, where L is the measurement line width of the optical sensor.
步骤5：重复步骤2-步骤4，将所述光学测量模块笛卡尔坐标系下的测量数据(x,y,z) 绕着所述高精度气浮回转C轴的回转轴心线统一到柱坐标系下(r,θ,z)，不同半径下的扫描数据拼接组合后获取完整所述待测晶圆表面三维形貌信息。Step 5: Repeat steps 2 to 4 to unify the measurement data (x, y, z) of the optical measurement module in the Cartesian coordinate system around the rotation axis of the high-precision air-floating rotary C-axis to the cylindrical coordinate system (r, θ, z), and splice and combine the scanning data at different radii to obtain complete three-dimensional morphology information of the surface of the wafer to be measured.
实施例4：Embodiment 4:
本发明提供了一种晶圆表面三维形貌高速测量装置的测量方法，如图4所示，包括：The present invention provides a method for measuring a wafer surface three-dimensional topography high-speed measuring device, as shown in FIG4 , comprising:
(1)测量开始，首先通过自动化上料装置实现所述待测晶圆3上料到所述载物台组件8上。(1) When the measurement starts, the wafer 3 to be measured is first loaded onto the stage assembly 8 by an automated loading device.
(2)控制所述运动模组搭载待测晶圆3运动到所述光学测量模块2工作距离范围内，设定传感器测量参数，包括测量光幕线间距、Z向测量距离、曝光强度、采集帧率、测量长度。(2) Control the motion module to carry the wafer 3 to be tested and move it to the working distance range of the optical measurement module 2, and set the sensor measurement parameters, including measuring the light curtain line spacing, Z-axis measurement distance, exposure intensity, acquisition frame rate, and measurement length.
(3)基于所述运动模组搭载所述待测晶圆3及所述光学测量模块2设定自动测量路径规划，具体步骤为：首先根据晶圆几何尺寸、所述光学测量模块线宽及重叠范围这些参量进行参数设定，然后选择路径类型，确定生成测量***中所述运动模组的回转类扫描测量路径，具体路径如实例介绍。(3) Automatic measurement path planning is set based on the motion module carrying the wafer to be measured 3 and the optical measurement module 2. The specific steps are: first, parameters are set according to the wafer geometric size, the line width of the optical measurement module and the overlapping range, and then the path type is selected to determine the rotary scanning measurement path of the motion module in the measurement system. The specific path is introduced in the example.
(4)点击测量开始按键，在所述自动化测量路径规划下，对所述待测晶圆3表面进行全自动高速扫描测量，扫描获取完整晶圆表面三维形貌。(4) Click the measurement start button, and under the automatic measurement path planning, perform a fully automatic high-speed scanning measurement on the surface of the wafer 3 to obtain the three-dimensional morphology of the complete wafer surface.
(5)针对获取的所述晶圆表面三维形貌进行数据处理，包括常见的高斯滤波去噪，三点成基准面校正点云的倾斜度。实现参数分析评价，具体参数评价处理包括：(5) Data processing is performed on the acquired three-dimensional morphology of the wafer surface, including common Gaussian filtering to remove noise and three-point reference plane to correct the inclination of the point cloud. Parameter analysis and evaluation are realized, and the specific parameter evaluation processing includes:
1)在基准面上找三点通过公式计算出Ax+By+Cz+D＝0这一平面，测量所述晶圆表面三维点云上找三点，通过公式计算出与面的距离D1，D2，D3，对这三个点进行计算以求的最终平面度；1) Find three points on the reference plane and calculate the plane Ax+By+Cz+D=0 by the formula, find three points on the three-dimensional point cloud of the wafer surface, calculate the distance D1, D2, and D3 from the surface by the formula, and calculate the final flatness of these three points;
2)基于ISO 25178表面粗糙度Sa及ISO 4287表面线粗糙度评估方法的国际标准，计算评价所述晶圆表面粗糙度信息；2) Based on the international standards of ISO 25178 surface roughness Sa and ISO 4287 surface line roughness evaluation method, calculate and evaluate the surface roughness information of the wafer;
3)基于国际标准化组织ISO5436-1：2000标准计算评价所述晶圆表面测量数据台阶高度；3) Calculating and evaluating the step height of the wafer surface measurement data based on the International Organization for Standardization ISO5436-1:2000 standard;
4)选取在垂直于线宽方向上距离底部的位置二分之一结构高度处的线宽，即中部线宽，为所述晶圆表面测量数据线宽。4) Select the line width at a position half the structure height from the bottom in the direction perpendicular to the line width, that is, the middle line width, as the data line width measured on the wafer surface.
(6)测量结果保存留档。(6) The measurement results are saved and archived.
(7)最后通过自动化上料装置实现所述待测晶圆3下料，结束测量。(7) Finally, the wafer 3 to be tested is unloaded through an automated loading device, and the measurement is completed.
基于本公开实施例中可设定多种回转类晶圆扫描测量路径，限于所述光学测量模块线宽长度，需要多次回转类栅格扫描才能实现晶圆表面三维形貌完整扫描测量。为保证晶圆表面三维形貌高速扫描测量，减少扫描遍历次数和扫描弧长则可有效降低单张晶圆完整三维扫描 的耗时。因此良好的晶圆测量路径规划对高效率扫描测量至关重要，具体实例如下：Based on the embodiments of the present disclosure, a variety of rotational wafer scanning measurement paths can be set. Limited by the line width and length of the optical measurement module, multiple rotational grid scans are required to achieve complete scanning and measurement of the three-dimensional morphology of the wafer surface. In order to ensure high-speed scanning and measurement of the three-dimensional morphology of the wafer surface, reducing the number of scanning traversals and the scanning arc length can effectively reduce the time consumption of a complete three-dimensional scan of a single wafer. Therefore, good wafer measurement path planning is crucial for efficient scanning and measurement. Specific examples are as follows:
实例1：Example 1:
如图5所示，经典的同心圆栅格回转扫描测量方式采用不同半径同心圆的扫描驱动线示意14的形式对待测晶圆3进行表面三维形貌扫描测量，完整扫描测量所用时间为：As shown in FIG5 , the classic concentric circle grid rotation scanning measurement method uses scanning drive lines 14 of different radii concentric circles to perform surface three-dimensional morphology scanning measurement on the wafer 3 to be measured. The time taken for the complete scanning measurement is:
R
i＝R-(R/△x
1-i)△x
1
R i = R - (R / △ x 1 - i) △ x 1
0<i≤R/L0<i≤R/L
其中，R为所述待测晶圆3的半径，△P为所述光学测量模块2扫描驱动线方向间隔，L为所述光学测量模块2扫描线宽，△x
1为所述光学测量模块2扫描线横向间距，△x
1≤L，v为所述光学测量模块2的扫描速度，i为扫描圈数。
Wherein, R is the radius of the wafer 3 to be measured, △P is the spacing of the optical measurement module 2 in the scanning driving line direction, L is the scanning line width of the optical measurement module 2, △ x1 is the lateral spacing of the scanning lines of the optical measurement module 2, △ x1 ≤L, v is the scanning speed of the optical measurement module 2, and i is the number of scanning circles.
实例2：Example 2:
同心圆栅格回转扫描测量方式需要完整扫描所述待测晶圆3最大外径，耗时较长。因此，为减少扫描耗时采用螺旋线扫描驱动线方式对所述待测晶圆3进行表面三维形貌扫描测量，如图6所示，完整扫描测量所有时间为：The concentric circle grid rotation scanning measurement method requires a complete scan of the maximum outer diameter of the wafer 3 to be tested, which takes a long time. Therefore, in order to reduce the scanning time, a spiral line scanning driving line method is used to perform surface three-dimensional morphology scanning measurement on the wafer 3 to be tested, as shown in Figure 6. The total time for the complete scanning measurement is:
R
i＝R-(R/△x
2-i)△x
2
R i = R - (R / △ x 2 - i) △ x 2
0<i≤R/△x
2
0<i≤R/△x 2
其中，R为所述待测晶圆3的半径，△P为所述光学测量模块2扫描驱动线方向间隔，△x
2为所述光学测量模块2扫描线横向间距，v为所述光学测量模块2的扫描速度，i为扫描圈数。
Wherein, R is the radius of the wafer 3 to be measured, ΔP is the spacing in the scanning driving line direction of the optical measurement module 2, Δx2 is the lateral spacing of the scanning lines of the optical measurement module 2, v is the scanning speed of the optical measurement module 2, and i is the number of scanning circles.
对比实例1和实例2，为保证所述光学测量模块2扫描线能够遍历整个所述待测晶圆3，△x
2＜△x
1≤L，所述晶圆螺旋线扫描驱动线方式耗时为每个i×△x
2半径下半圆周长的扫描用时。对比所述同心圆栅格回转扫描测量方式，所述晶圆螺旋线扫描驱动线方式明显少了所述待测晶圆3最大外径扫描耗时，因此相同测量条件，所述晶圆螺旋线扫描驱动线方式耗时优于所述同心圆栅格回转扫描测量方式。
Comparing Example 1 and Example 2, to ensure that the scanning line of the optical measurement module 2 can traverse the entire wafer 3 to be measured, △x 2 <△x 1 ≤L, the time consumption of the wafer spiral scanning driving line method is the scanning time of the circumference of the lower half circle of radius i×△x 2. Compared with the concentric circle grid rotation scanning measurement method, the wafer spiral scanning driving line method significantly reduces the time consumption of scanning the maximum outer diameter of the wafer 3 to be measured. Therefore, under the same measurement conditions, the time consumption of the wafer spiral scanning driving line method is better than that of the concentric circle grid rotation scanning measurement method.
实例3：Example 3:
为进一步降低完整扫描所述待测晶圆3三维形貌耗时。本公开提出新型离心圆弧栅格扫描方式对所述待测晶圆3进行表面三维形貌扫描测量，如图8所示。具体离心圆弧栅格扫描测量耗时计算原理如图7所示，离心圆弧栅格扫描测量耗时为每个i×△x
1半径下弧长的扫描用时，完整扫描测量所有时间为：
In order to further reduce the time consumption of completely scanning the three-dimensional morphology of the wafer 3 to be tested. The present disclosure proposes a new centrifugal arc grid scanning method to perform surface three-dimensional morphology scanning and measurement on the wafer 3 to be tested, as shown in FIG8. The specific centrifugal arc grid scanning measurement time consumption calculation principle is shown in FIG7. The centrifugal arc grid scanning measurement time consumption is the scanning time of the arc length under each i×△x 1 radius. The total time of the complete scanning measurement is:
AO
1＝BO
1＝2R-i△x
1
AO 1 = BO 1 = 2R-i△x 1
0<i≤2R/L0<i≤2R/L
其中，R为所述待测晶圆3的半径，△P为所述光学测量模块2扫描驱动线方向间隔，△x
1为所述光学测量模块2扫描线横向间距，v为所述光学测量模块2的扫描速度，i为扫描圈数，L为所述光学测量模块2扫描线宽，L
1为所述离心圆弧栅格扫描方式的离心量，∠AO
2E是弧长AE圆心角度数，∠AO
2O
1为∠AO
2B的外角。
Wherein, R is the radius of the wafer 3 to be measured, △P is the spacing in the scanning driving line direction of the optical measurement module 2, △ x1 is the lateral spacing of the scanning lines of the optical measurement module 2, v is the scanning speed of the optical measurement module 2, i is the number of scanning circles, L is the scanning line width of the optical measurement module 2, L1 is the centrifugal amount of the centrifugal arc grid scanning method, ∠AO2E is the degree of the center angle of the arc length AE, and ∠AO2O1 is the external angle of ∠AO2B .
对比实例2和实例3，所述光学测量模块2采用离心圆弧栅格扫描方式遍历整个所述待测晶圆3耗时为每个(2R-i△x
1)弧长下的扫描用时。该离心圆弧栅格弧长总长度小于实例2所述螺旋线扫描驱动线中(i×△x
2)个半圆周长总和，因此相同测量条件，所提晶圆离心圆弧栅格扫描方式耗时优于所述螺旋线扫描驱动线方式。本实例公开的晶圆离心圆弧栅格扫描方式可保证所述光学测量模块2百纳米级测量精度的前提下实现高效率扫描晶圆表面完整三维形貌扫描测量。
Comparing Example 2 and Example 3, the optical measurement module 2 uses the centrifugal arc grid scanning method to traverse the entire wafer 3 to be measured, and the time consumed is the scanning time under each (2R-i△x 1 ) arc length. The total length of the centrifugal arc grid arc length is less than the sum of the circumferences of the (i×△x 2 ) semicircles in the spiral line scanning drive line in Example 2. Therefore, under the same measurement conditions, the proposed wafer centrifugal arc grid scanning method consumes more time than the spiral line scanning drive line method. The wafer centrifugal arc grid scanning method disclosed in this example can achieve high-efficiency scanning of the complete three-dimensional morphology of the wafer surface under the premise of ensuring the optical measurement module 2 with a measurement accuracy of hundreds of nanometers.
本领域内的技术人员应明白，本发明的实施例可提供为方法、***、或计算机程序产品。因此，本发明可采用完全硬件实施例、完全软件实施例、或结合软件和硬件方面的实施例的形式。而且，本发明可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器、CD-ROM、光学存储器等)上实施的计算机程序产品的形式。Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.
本发明是参照根据本申请实施例的方法、设备(***)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理设备的处理器以产生一个机器，使得通过计算机或其他可编程数据处理设备的处理器执行的指令产生用于实现在流 程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。The present invention is described with reference to the flowchart and/or block diagram of the method, device (system), and computer program product according to the embodiment of the present application. It should be understood that each process and/or box in the flowchart and/or block diagram, as well as the combination of the process and/or box in the flowchart and/or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device produce a device for implementing the function specified in one process or multiple processes in the flowchart and/or one box or multiple boxes in the block diagram.
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理设备以特定方式工作的计算机可读存储器中，使得存储在该计算机可读存储器中的指令产生包括指令装置的制造品，该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device that implements the functions specified in one or more processes in the flowchart and/or one or more boxes in the block diagram.
这些计算机程序指令也可装载到计算机或其他可编程数据处理设备上，使得在计算机或其他可编程设备上执行一系列操作步骤以产生计算机实现的处理，从而在计算机或其他可编程设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。These computer program instructions may also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, whereby the instructions executed on the computer or other programmable device provide steps for implementing the functions specified in one or more processes in the flowchart and/or one or more boxes in the block diagram.
最后应当说明的是：以上实施例仅用以说明本发明的技术方案而非对其限制，尽管参照上述实施例对本发明进行了详细的说明，所属领域的普通技术人员应当理解：依然可以对本发明的具体实施方式进行修改或者等同替换，而未脱离本发明精神和范围的任何修改或者等同替换，其均应涵盖在本发明的权利要求保护范围之内。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents, and any modifications or equivalent replacements that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.
Claims (7)
- 一种晶圆表面三维形貌高速测量方法，其特征在于，包括：A high-speed measurement method for three-dimensional surface morphology of a wafer, characterized by comprising:S1、对光学测量模块进行测量前设置；S1. Setting up the optical measurement module before measurement;S2、利用光学测量模块对应的光幕线投射至待测晶圆后，采集待测晶圆的表面反射光条数据解算得到与当前光幕线对应的XZ坐标值，利用所述XZ坐标值作为二维测量数据；S2, after projecting the light curtain line corresponding to the optical measurement module onto the wafer to be measured, collecting the surface reflected light strip data of the wafer to be measured and solving to obtain the XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as the two-dimensional measurement data;S3、采集待测晶圆不同回转角度的二维测量数据后得到当前回转半径的待测晶圆初始三维形貌信息；S3, acquiring the two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain the initial three-dimensional morphology information of the wafer to be measured at the current rotation radius;S4、采集待测晶圆不同回转半径对应的待测晶圆初始三维形貌信息；S4, collecting initial three-dimensional morphology information of the wafer to be tested corresponding to different rotation radii of the wafer to be tested;S5、利用所述待测晶圆初始三维形貌信息基于圆柱坐标系转换后，进行拼接处理得到待测晶圆表面三维形貌信息。S5, using the initial three-dimensional morphology information of the wafer to be measured to convert it based on a cylindrical coordinate system, and then performing splicing processing to obtain the three-dimensional morphology information of the surface of the wafer to be measured.
- 如权利要求1所述的一种晶圆表面三维形貌高速测量方法，其特征在于，所述对光学测量模块进行测量前设置包括：The method for high-speed measurement of three-dimensional topography of a wafer surface according to claim 1, wherein the pre-measurement setting of the optical measurement module comprises:将待测晶圆设置于光学测量模块的正下方，所述待测晶圆与光学测量模块的竖直方向间距与光学测量模块量程对应。The wafer to be tested is arranged directly below the optical measurement module, and the vertical distance between the wafer to be tested and the optical measurement module corresponds to the measuring range of the optical measurement module.
- 如权利要求1所述的一种晶圆表面三维形貌高速测量方法，其特征在于，所述采集待测晶圆的表面反射光条数据解算得到与当前光幕线对应的XZ坐标值包括：The high-speed measurement method for three-dimensional surface morphology of a wafer according to claim 1, characterized in that the collecting of surface reflected light strip data of the wafer to be measured and solving the XZ coordinate value corresponding to the current light curtain line comprises:利用待测晶圆的表面反射光条数据基于像素下光条能量提取技术的光学检测方法得到当前光幕线对应的待测晶圆表面的相对Z向高度值后，获取待测晶圆当前光幕线对应的XZ坐标值；After obtaining the relative Z-direction height value of the surface of the wafer to be tested corresponding to the current light curtain line using the surface reflected light strip data of the wafer to be tested and the optical detection method based on the light strip energy extraction technology under the pixel, the XZ coordinate value corresponding to the current light curtain line of the wafer to be tested is obtained;其中，X坐标为沿光幕线方向坐标值，Z向为解算相对基准面的距离值。Among them, the X coordinate is the coordinate value along the light curtain line, and the Z direction is the distance value relative to the reference plane.
- 如权利要求1所述的一种晶圆表面三维形貌高速测量方法，其特征在于，所述采集待测晶圆不同回转角度的二维测量数据后得到当前回转半径的待测晶圆初始三维形貌信息包括：The method for high-speed measurement of three-dimensional topography of a wafer surface according to claim 1, wherein the step of acquiring two-dimensional measurement data of different rotation angles of the wafer to be measured to obtain initial three-dimensional topography information of the wafer to be measured at the current rotation radius comprises:当待测晶圆每回转固定度数θ时，则采集当前回转角度对应的测量数据(x i,z i)； When the wafer to be measured rotates a fixed degree θ each time, the measurement data (x i , z i ) corresponding to the current rotation angle is collected;利用相同半径下当前回转角度对应的测量数据(x i,z i)得到待测晶圆在当前回转半径的三维信息(x i,y i,z i)作为当前回转半径的待测晶圆初始三维形貌信息。 The three-dimensional information ( xi , yi , zi ) of the wafer to be measured at the current rotation radius is obtained by using the measurement data ( xi , yi ) corresponding to the current rotation angle under the same radius as the initial three-dimensional shape information of the wafer to be measured at the current rotation radius.
- 如权利要求1所述的一种晶圆表面三维形貌高速测量方法，其特征在于，利用所述待测晶圆初始三维形貌信息基于圆柱坐标系转换后，进行拼接处理得到待测晶圆表面三维形貌信息包括：The method for high-speed measurement of three-dimensional topography of a wafer surface according to claim 1 is characterized in that the initial three-dimensional topography information of the wafer to be measured is converted based on a cylindrical coordinate system and then spliced to obtain the three-dimensional topography information of the wafer surface to be measured, comprising:将光学测量模块对应的待测晶圆初始三维形貌信息(x i,y i,z i)基于待测晶圆回转轴的轴心线进行圆柱坐标系转换得到待测晶圆基础三维形貌信息(r,θ,z)； The initial three-dimensional morphology information ( xi , yi , z ) of the wafer to be measured corresponding to the optical measurement module is converted into a cylindrical coordinate system based on the axis of rotation of the wafer to be measured to obtain the basic three-dimensional morphology information (r, θ, z) of the wafer to be measured;利用不同回转半径对应的待测晶圆基础三维形貌信息(r,θ,z)进行拼接处理得到待测晶圆表面三维形貌信息。The basic three-dimensional morphological information (r, θ, z) of the wafer to be tested corresponding to different gyration radii is spliced to obtain the three-dimensional morphological information of the wafer surface to be tested.
- 一种晶圆表面三维形貌高速测量装置，其特征在于，包括大理石基座、运动模组和载物台组件，所述大理石基座上设置有运动模组；A high-speed measurement device for three-dimensional topography of a wafer surface, characterized in that it comprises a marble base, a motion module and a stage assembly, wherein the marble base is provided with a motion module;所述运动模组包括高精度气浮运动X轴、高精度气浮运动Y轴、高精度运动Z轴、高精度气浮回转C轴与光学测量模块，所述高精度气浮运动X轴、高精度气浮运动Y轴呈十字交叉堆叠设置于大理石基座上，所述高精度气浮运动X轴、高精度气浮运动Y轴上方设置有高精度气浮回转C轴，所述高精度运动Z轴设置于大理石龙门上；The motion module includes a high-precision air-floating motion X-axis, a high-precision air-floating motion Y-axis, a high-precision motion Z-axis, a high-precision air-floating rotary C-axis and an optical measurement module. The high-precision air-floating motion X-axis and the high-precision air-floating motion Y-axis are cross-stacked and arranged on a marble base. A high-precision air-floating rotary C-axis is arranged above the high-precision air-floating motion X-axis and the high-precision air-floating motion Y-axis. The high-precision motion Z-axis is arranged on a marble gantry.所述载物台组件设置于高精度气浮回转C轴的上方，并通过倾斜调整组件与高精度气浮回转C轴连接。The stage assembly is arranged above the high-precision air-floating rotary C-axis and is connected to the high-precision air-floating rotary C-axis via a tilt adjustment assembly.
- 如权利要求6所述的一种晶圆表面三维形貌高速测量装置，其特征在于，所述光学测量模块为高精度高采样率三维线传感器。The high-speed measurement device for three-dimensional surface topography of a wafer as described in claim 6 is characterized in that the optical measurement module is a high-precision and high-sampling rate three-dimensional line sensor.
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