CN114235840B - Wafer surface defect detection method based on light cutting microscope - Google Patents
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- 238000005259 measurement Methods 0.000 claims abstract description 25
- 235000012431 wafers Nutrition 0.000 claims description 120
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- 238000001179 sorption measurement Methods 0.000 claims description 13
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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Abstract
The invention belongs to the technical field of wafer detection, and discloses a wafer surface defect detection method based on a light-cutting microscope, which comprises the following steps: firstly, initializing parameters of a wafer surface defect detection system, then loading and measuring a wafer to be detected through the wafer surface defect detection system, carrying out surface reconstruction on the wafer to be detected according to collected measurement data, and outputting a wafer detection result. The invention carries out high-precision and high-efficiency defect detection on the wafer surface by adopting the wafer surface defect detection system, and can obtain the three-dimensional contour map of the detected surface of the wafer, the defect morphology and the coordinates thereof, thereby facilitating the cleaning, the position calibration or the further fine measurement treatment of the wafer defect in the later period. The invention not only shortens the detection time, thereby indirectly improving the circulation speed of the wafer manufacturing process, but also can quickly obtain the high-precision information of the defects, thereby providing powerful help for searching the reasons of the defects of the wafer and effectively improving the product yield.
Description
Technical Field
The invention belongs to the technical field of wafer detection, and particularly relates to a wafer surface defect detection method based on a light-cutting microscope.
Background
The integrated circuit industry is a strategic basic industry, and the technical level and the industrial scale of the integrated circuit industry are important marks for measuring the economic development and technological strength of a country. In recent years, with the rise of economy and technology, china has become the largest and fastest growing integrated circuit market in the global scale. The process flow of the production and manufacture of integrated circuits is very fine and complex. Among them, the wafer is used as an important basic element for manufacturing chips, and the surface defect is a main cause affecting the yield of chips, so the high-precision detection of the surface defect of the wafer becomes an important part in the process.
In order to improve the yield of chips, a plurality of inspection processes are generally provided in the manufacturing process of chips, so that surface defects of wafers can be found in time in the manufacturing process, and improvement on the process is made in time. For the detection of wafer surface defects, microscopy is adopted mainly in the earliest and more common cases. The carpet type manual detection mode needs repeated manual focusing, has the defects of overlong detection time, low detection efficiency and high labor cost, is easy to be subjected to false detection due to the influence of eyestrain and the like of detection personnel, and can take too long time to check defect problems due to overlong detection time, so that a large number of wafers are too low in yield due to the defect problems, and loss is caused. In addition, although a microscope such as an electron microscope can detect particles of 0.2. 0.2 nm, it contaminates and damages the wafer and is less efficient; the atomic force microscope method scans the surface of the structure through the probe, but the scanning speed is very slow, the required time is relatively long, the efficiency is relatively low, and the like. In addition, the high-precision microscope has high cost, and in actual production, a plurality of microscopes cannot be arranged in each factory to meet the defect scanning of each key processing machine. Therefore, in order to better cope with different defect detection, and to improve the detection efficiency and reduce erroneous judgment, it is necessary to adopt a high-precision automated detection method.
Disclosure of Invention
Aiming at the problems and the defects existing in the prior art, the invention aims to provide a wafer surface defect detection method based on a light cutting microscope.
Based on the above purpose, the invention adopts the following technical scheme:
the invention provides a wafer surface defect detection method based on a light-cutting microscope, which comprises the following steps:
(1) Initializing: initializing parameters of a wafer surface defect detection system;
(2) Loading: the wafer carrying system is transferred from an initial position to a loading position, and then the wafer carrying system loads the wafer to be tested on the wafer carrying system and positions the center of the wafer to be tested through the wafer positioning device;
(3) Measurement: the wafer bearing system carrying the wafer to be measured moves to the optical system measuring area, and takes the center of the wafer to be measured as a measurement starting position; then the optical system starts to measure the surface of the wafer to be measured, at the moment, the wafer bearing system rotates and moves step by step, the optical cutting microscope optical cutting image of the optical system comprehensively scans the surface of the wafer to be measured by the scanning track of the equidistant spiral line, and the pattern detector acquires measurement data; resetting the wafer bearing system to an initial position after the scanning action is completed;
(4) And (3) data processing: the signal processing system carries out surface shape reconstruction according to the collected measurement data and outputs a measurement result;
(5) Ending: and (3) the wafer carrying system moves to a loading position, the wafer carrying system unloads the measured wafer, and the measurement is finished or the steps (2) - (4) are repeated to measure the next wafer to be measured.
Preferably, the wafer transport system is a robot with a vacuum adsorption mechanism; the positioning accuracy of the wafer handling system loading wafers onto the wafer carrier system is 0.05 mm.
Preferably, the wafer bearing system is a high-precision air-float turntable with a vacuum adsorption mechanism, and the motion parameters of the high-precision air-float turntable are as follows: radial runout is less than 50 nm, axial runout is less than 20 nm, rotational positioning resolution is 1'', and repeated positioning accuracy is 0.5''.
Preferably, the wafer transport system utilizes a vacuum adsorption mechanism to load and unload wafers; after the wafer bearing system receives the wafer to be tested, the vacuum adsorption mechanism fixes the wafer to be tested on the high-precision air-float turntable through suction force, and the suction force is removed during unloading.
Preferably, the parameters of the wafer surface defect detection system in the step (1) include a path parameter of the wafer conveying system, a suction parameter of the vacuum suction mechanism, a rotation speed parameter and a stepping distance parameter of the wafer carrying system, a sampling frequency parameter of the optical system, and a diameter parameter of the wafer to be tested.
Preferably, in the step (1), the rotation speed parameter is set to be 50 rpm, the stepping distance parameter is set to be 1.2 mm, the sampling frequency parameter is set to be 50 Hz, and other parameters are set according to practical situations.
Preferably, the measuring process in step (3) is performed in a dark field; the diameter of the field of view of the light cutting microscope is 3 mm; in step (3), the fields of view of the scan trajectories of equidistant spirals overlap by 20%.
Preferably, the pattern detector is a 4K x 4K ultra high definition CMOS detector.
Preferably, the initialization process in step (1) is performed just prior to the same batch of wafer measurements.
More preferably, the wafer carrying system is moved by a guide rail; the guide rail is a static oil pressure linear guide rail.
Compared with the prior art, the invention has the following beneficial effects:
according to the wafer surface defect detection method provided by the invention, the detection device can be used for detecting the defects on the wafer surface with high precision and high efficiency, and the three-dimensional profile of the detected surface of the wafer, the defect morphology and the coordinates thereof can be obtained, so that the defects can be conveniently cleaned, the positions of the defects can be calibrated or further fine measurement can be conveniently carried out at the later stage. In one embodiment, the present invention requires about 8000 points to be sampled for about 2.6 minutes to scan the entire surface area of a 12 inch wafer; a tilt angle of 15 deg. with a lateral resolution of 0.75 μm can achieve a longitudinal resolution of 0.19 μm. The detection method reduces the detection time on one hand, thereby indirectly improving the circulation speed of the wafer manufacturing process; on the other hand, the defect information can be obtained rapidly, powerful help is provided for finding the cause of defects of the wafer, the yield of products is effectively improved, and the method is significant to the semiconductor manufacturing industry.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a wafer surface defect inspection system of the present invention;
fig. 2 is a schematic diagram of a detection device according to the present invention, wherein 1 is an industrial robot, 2 is a vacuum adsorption mechanism of the industrial robot, 3 is a light-cutting microscope, 4 is a high-precision air-floating turntable (with the vacuum adsorption mechanism), 5 is a guide rail, 6 is a wafer, and 7 is a wafer positioning device;
fig. 3 is a schematic diagram of a scanning measurement path of the light-cutting microscope according to the present invention, wherein a is a relative position and a movement direction of a wafer to be measured and a light-cutting image during scanning measurement, and b is a scanning movement track of the light-cutting image.
Detailed Description
The present invention will be further described in detail below with reference to the accompanying drawings by way of examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Example 1
The embodiment of the invention provides a wafer surface defect detection method based on a light-cutting microscope, which is shown in fig. 1 and comprises the following steps:
(1) Initializing: and initializing parameters of a wafer surface defect detection system.
The wafer surface defect detection system comprises a detection device and a signal processing system. The detection device comprises a wafer conveying system, an optical system, a wafer bearing system, a guide rail and a wafer positioning device; the signal processing system comprises a control module, a driving module, a data acquisition module and a man-machine interaction interface. The wafer surface defect detection system parameters are input into a signal processing system, and data processing is performed by a control module and a driving module in the signal processing system. Meanwhile, the control module and the driving module system control the movement track of the wafer conveying system and the wafer bearing system, the suction force of the vacuum adsorption mechanism, the sampling frequency of the optical system and the like. The optical system includes a light-cut microscope and a pattern detector.
The wafer bearing system is a high-precision air-floating rotary table 4 with a vacuum adsorption mechanism, the radial runout of the high-precision air-floating rotary table 4 is less than 50 nm, the axial runout is less than 20 nm, the rotary positioning resolution is 1'', and the repeated positioning precision is 0.5''. The wafer conveying system is an industrial robot 1 with a vacuum adsorption mechanism 2, and the industrial robot 1 loads wafers to the high-precision air-floating turntable 4, and the positioning precision is 0.05 mm.
The parameters of the wafer surface defect detection system comprise a path parameter for carrying and loading and unloading the wafer by the wafer carrying system, a suction parameter of the vacuum suction mechanism, a rotating speed parameter of the wafer carrying system during rotation and a stepping distance parameter during stepping movement, a sampling frequency parameter of the optical system and a diameter parameter of the wafer to be detected. The rotating speed parameter is set to be 50 rpm, the stepping distance parameter is set to be 1.2 mm, the sampling frequency parameter is set to be 50 Hz, the wafer diameter parameter is set to be 12 inch, and other parameters are set according to actual conditions.
(2) Loading: the high-precision air-bearing turntable 4 is transferred from the initial position to the loading position. The industrial robot 1 loads a wafer 6 to be tested onto a high-precision air-float turntable 4 at a loading position by means of a vacuum adsorption mechanism 2 according to conveying and loading path parameters set in step (1), the wafer to be tested is fixed on the high-precision air-float turntable by the vacuum adsorption mechanism on the high-precision air-float turntable, and the center of the wafer to be tested is positioned by a wafer positioning device 7 on the high-precision air-float turntable 4. A specific detection device is shown in fig. 2.
(3) Measurement: the high-precision air-floating rotary table 4 carrying the wafer 6 to be measured moves to a measuring area of the light cutting microscope 3 through the static oil pressure linear guide rail 5, and takes the center of the wafer to be measured as a measuring initial position; and (3) performing surface measurement on the wafer (6) to be measured by the light cutting microscope (3) according to the sampling frequency set in the step (1), wherein the high-precision air floatation turntable (4) performs stepping movement along the guide rail while rotating, light cutting (about 3 mm) of the light cutting microscope (3) is completed, the surface of the wafer (6) to be measured is comprehensively scanned, and the graph detectors synchronously acquire measurement data, wherein the scanning movement track is an equidistant spiral line (shown in fig. 3), and the fields of view overlap by 20%. After the scanning operation is completed, the high-precision air-floating turntable 4 is reset to the initial position.
The light cutting microscope is an instrument for measuring the surface quality of a processed workpiece according to the light cutting principle, namely, a light band is used for cutting the surface to obtain a section profile curve, and the intersecting line of the light band and the surface reflects the microscopic morphology profile shape of the measured surface, so that the light cutting microscope is widely applied to surface measurement of engineering parts. The whole measuring process is carried out in dark field, and the pattern detector adopted in the measuring process is a 4K multiplied by 4K ultra-high-definition CMOS detector.
(4) And (3) data processing: the data acquisition module in the signal processing system reconstructs the surface according to the acquired measurement data, outputs a three-dimensional contour map of the surface of the wafer to be detected at the human-computer interaction interface, displays the defect morphology and coordinates thereof, and can store the measurement data according to the requirement.
(5) After the measurement is completed, the high-precision air-float turntable 4 moves to a loading position, the industrial robot 1 unloads the measured wafer 6, and the round of measurement is finished or the steps (2) - (4) are repeated to measure the next wafer to be measured.
Measurement results show that the method of the invention requires about 8000 points to be sampled when scanning the entire surface area of a 12 inch wafer, and takes about 2.6 minutes. System lateral resolution without taking into account differential image enhancement computational imaging techniquesh0.75 μm; when the inclination angle isβAt 15 °, the achievable longitudinal resolution is in accordance withhsinβCalculated as 0.19 μm.
In conclusion, the invention effectively overcomes the defects in the prior art and has high industrial utilization value. The above-described embodiments are provided to illustrate the gist of the present invention, but are not intended to limit the scope of the present invention. It will be understood by those skilled in the art that various modifications and equivalent substitutions may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention.
Claims (7)
1. The wafer surface defect detection method based on the light cutting microscope is characterized by comprising the following steps of:
(1) Initializing: initializing parameters of a wafer surface defect detection system;
(2) Loading: the wafer carrying system is transferred from an initial position to a loading position, and then the wafer carrying system loads the wafer to be tested on the wafer carrying system and positions the center of the wafer to be tested through the wafer positioning device;
(3) Measurement: the measuring process is carried out in a dark field, a wafer carrying system carrying a wafer to be measured moves to an optical system measuring area, and the center of the wafer to be measured is used as a measuring initial position; then the optical system starts to measure the surface of the wafer to be measured, at the moment, the wafer bearing system rotates and moves step by step, the optical cutting microscope of the optical system performs optical cutting to the surface of the wafer to be measured by using the scanning track of an equidistant spiral line, the optical band is used for cutting the surface to obtain a section profile curve, the intersection line of the optical band and the surface reflects the microscopic shape profile shape of the surface to be measured, and the graph detector acquires measurement data; resetting the wafer bearing system to an initial position after the scanning action is completed; the diameter of the field of view of the light cutting microscope is 3 mm; the fields of view of the scan trajectories of equidistant spirals overlap by 20%;
(4) And (3) data processing: the signal processing system carries out surface shape reconstruction according to the collected measurement data and outputs a measurement result;
(5) Ending: the wafer carrying system moves to a loading position, the wafer carrying system unloads the measured wafer, and the measurement is finished or the steps (2) - (4) are repeated to measure the next wafer to be measured;
the longitudinal resolution is calculated as hsin beta, where h is the system lateral resolution, beta is the tilt angle, and beta is 15.
2. The method of claim 1, wherein the wafer handling system is a robot with a vacuum suction mechanism; the positioning accuracy of the wafer handling system loading wafers onto the wafer carrier system is 0.05 mm.
3. The method for detecting surface defects of a wafer according to claim 2, wherein the wafer carrying system is a high-precision air-floating turntable with a vacuum adsorption mechanism, and the motion parameters of the high-precision air-floating turntable are as follows: radial runout is less than 50 nm, axial runout is less than 20 nm, rotational positioning resolution is 1'', and repeated positioning accuracy is 0.5''.
4. The method of claim 3, wherein the wafer handling system uses a vacuum chuck to handle the wafer; after the wafer bearing system receives the wafer to be tested, the vacuum adsorption mechanism fixes the wafer to be tested on the high-precision air-float turntable through suction force, and the suction force is removed during unloading.
5. The method according to claim 4, wherein the parameters of the wafer surface defect detecting system in the step (1) include a path parameter of a wafer transporting system, a suction parameter of a vacuum suction mechanism, a rotation speed parameter and a stepping distance parameter of a wafer carrying system, a sampling frequency parameter of an optical system, and a diameter parameter of a wafer to be detected; wherein, the rotating speed parameter is set to be 50 rpm, the stepping distance parameter is set to be 1.2 mm, and the sampling frequency parameter is set to be 50 Hz.
6. The method of claim 1, wherein the pattern detector is a 4K x 4K ultra high definition CMOS detector.
7. The method of claim 1, wherein the initializing process in step (1) is performed only before the same batch of wafer measurements.
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Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729900A (en) * | 1993-07-12 | 1995-01-31 | Nippon Electric Glass Co Ltd | Method for coating semiconductor device with glass |
| TWI283037B (en) * | 2002-10-25 | 2007-06-21 | Chung Shan Inst Of Science | Cluster-tool wafer transporting device and method |
| CN101021490A (en) * | 2007-03-12 | 2007-08-22 | 3i***公司 | Automatic detecting system and method for planar substrate |
| CN203203942U (en) * | 2013-04-19 | 2013-09-18 | 精映科技股份有限公司 | Wafer defect detection machine table |
| CN203203583U (en) * | 2013-04-24 | 2013-09-18 | 上海工程技术大学 | Workpiece intelligence detection system based on CCD |
| CN104458763A (en) * | 2014-12-12 | 2015-03-25 | 元亮科技有限公司 | Wide-view surface defect detector |
| CN104697476A (en) * | 2015-03-19 | 2015-06-10 | 北京时代之峰科技有限公司 | Automatic detection method and device for roughness light-incision profile curve |
| CN106216523A (en) * | 2016-09-05 | 2016-12-14 | 北京新能源汽车股份有限公司 | A kind of diel and the method for strain crystallized ability detection |
| CN106486406A (en) * | 2016-10-21 | 2017-03-08 | 杭州长川科技股份有限公司 | The pre- alignment device of IC wafers and pre- alignment method |
| CN106767290A (en) * | 2016-11-28 | 2017-05-31 | 复旦大学 | A kind of lossless comprehensive measurement device of thin-wall case |
| CN109192673A (en) * | 2018-08-27 | 2019-01-11 | 苏州精濑光电有限公司 | A kind of wafer detection method |
| CN109698139A (en) * | 2018-12-27 | 2019-04-30 | 上海华力微电子有限公司 | The real-time acquisition system of wafer defect optical photograph and acquisition method |
| CN209216936U (en) * | 2019-01-11 | 2019-08-06 | 上海福赛特机器人有限公司 | A kind of vacuum carrying of disc-like product is to level detecting apparatus |
| CN210668301U (en) * | 2019-12-13 | 2020-06-02 | 北京京仪自动化装备技术有限公司 | Wafer offset monitoring device |
| CN111272773A (en) * | 2019-12-31 | 2020-06-12 | 浙江大学 | Rapid ultrahigh-resolution detection system for surface defects of semiconductor wafer |
| CN111505476A (en) * | 2020-04-29 | 2020-08-07 | 江苏七维测试技术有限公司 | Test equipment of sensor wafer level test method |
| CN113295616A (en) * | 2021-03-30 | 2021-08-24 | 浙江大学杭州国际科创中心 | Comprehensive test method for SiC wafer and epitaxial layer structure thereof |
| CN113607755A (en) * | 2021-08-26 | 2021-11-05 | 厦门柯尔自动化设备有限公司 | Automatic detection device for wafer |
| CN214794519U (en) * | 2021-03-04 | 2021-11-19 | 武汉人和睿视科技有限公司 | Automatic detection device for semiconductor device |
-
2021
- 2021-12-29 CN CN202111630568.8A patent/CN114235840B/en active Active
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729900A (en) * | 1993-07-12 | 1995-01-31 | Nippon Electric Glass Co Ltd | Method for coating semiconductor device with glass |
| TWI283037B (en) * | 2002-10-25 | 2007-06-21 | Chung Shan Inst Of Science | Cluster-tool wafer transporting device and method |
| CN101021490A (en) * | 2007-03-12 | 2007-08-22 | 3i***公司 | Automatic detecting system and method for planar substrate |
| CN203203942U (en) * | 2013-04-19 | 2013-09-18 | 精映科技股份有限公司 | Wafer defect detection machine table |
| CN203203583U (en) * | 2013-04-24 | 2013-09-18 | 上海工程技术大学 | Workpiece intelligence detection system based on CCD |
| CN104458763A (en) * | 2014-12-12 | 2015-03-25 | 元亮科技有限公司 | Wide-view surface defect detector |
| CN104697476A (en) * | 2015-03-19 | 2015-06-10 | 北京时代之峰科技有限公司 | Automatic detection method and device for roughness light-incision profile curve |
| CN106216523A (en) * | 2016-09-05 | 2016-12-14 | 北京新能源汽车股份有限公司 | A kind of diel and the method for strain crystallized ability detection |
| CN106486406A (en) * | 2016-10-21 | 2017-03-08 | 杭州长川科技股份有限公司 | The pre- alignment device of IC wafers and pre- alignment method |
| CN106767290A (en) * | 2016-11-28 | 2017-05-31 | 复旦大学 | A kind of lossless comprehensive measurement device of thin-wall case |
| CN109192673A (en) * | 2018-08-27 | 2019-01-11 | 苏州精濑光电有限公司 | A kind of wafer detection method |
| CN109698139A (en) * | 2018-12-27 | 2019-04-30 | 上海华力微电子有限公司 | The real-time acquisition system of wafer defect optical photograph and acquisition method |
| CN209216936U (en) * | 2019-01-11 | 2019-08-06 | 上海福赛特机器人有限公司 | A kind of vacuum carrying of disc-like product is to level detecting apparatus |
| CN210668301U (en) * | 2019-12-13 | 2020-06-02 | 北京京仪自动化装备技术有限公司 | Wafer offset monitoring device |
| CN111272773A (en) * | 2019-12-31 | 2020-06-12 | 浙江大学 | Rapid ultrahigh-resolution detection system for surface defects of semiconductor wafer |
| CN111505476A (en) * | 2020-04-29 | 2020-08-07 | 江苏七维测试技术有限公司 | Test equipment of sensor wafer level test method |
| CN214794519U (en) * | 2021-03-04 | 2021-11-19 | 武汉人和睿视科技有限公司 | Automatic detection device for semiconductor device |
| CN113295616A (en) * | 2021-03-30 | 2021-08-24 | 浙江大学杭州国际科创中心 | Comprehensive test method for SiC wafer and epitaxial layer structure thereof |
| CN113607755A (en) * | 2021-08-26 | 2021-11-05 | 厦门柯尔自动化设备有限公司 | Automatic detection device for wafer |
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