CN115493523A - High-speed measurement method and device for three-dimensional morphology of wafer surface - Google Patents
High-speed measurement method and device for three-dimensional morphology of wafer surface Download PDFInfo
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Abstract
The invention relates to the field of wafer detection, in particular to a high-speed measurement method and a high-speed measurement device for the three-dimensional topography of a wafer surface, wherein the high-speed measurement method for the three-dimensional topography of the wafer surface comprises the following steps: after a light curtain line corresponding to the optical measurement module is projected to a wafer to be measured, collecting surface reflection light strip data of the wafer to be measured, calculating to obtain an XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as two-dimensional measurement data; the method comprises the steps of acquiring two-dimensional measurement data of wafers to be detected at different rotation angles to obtain initial three-dimensional shape information of the wafers to be detected at the current rotation radius, carrying out splicing processing after the initial three-dimensional shape information of the wafers to be detected is converted based on a cylindrical coordinate system to obtain the three-dimensional shape information of the surfaces of the wafers to be detected, effectively solving the problem of high-precision complete scanning measurement of the three-dimensional shapes of the surfaces of the wafers, realizing high automation integration level in software and hardware aspects, realizing batch measurement of the three-dimensional shapes of the surfaces of the off-line wafers, and realizing high-speed detection of the three-dimensional shapes of the surfaces of the on-line wafers by integrating the three-dimensional shape information of the surfaces of the wafers to be detected into a production line.
Description
Technical Field
The invention relates to the field of wafer detection, in particular to a high-speed measurement method and device for three-dimensional morphology of a wafer surface.
Background
The surface three-dimensional data is more and more emphasized because the surface three-dimensional data can more comprehensively and more truly reflect the characteristics of the surface of the part and evaluate the surface machining quality, the quality of the surface quality of the part can be more comprehensively evaluated through measuring the three-dimensional shape, the quality of a machining method and the reasonability of design requirements are further confirmed, the machining is guided, the machining process is optimized, the surface of the part with high quality is machined, and the realization of the use function of the part is ensured.
The surface of the wafer is a three-dimensional complex structure consisting of microstructure units, and the production and the manufacture of the wafer have the characteristics of nanometer scale, difficult direct contact, micro surface effect, large positioning error influence, large interference measurement result of dust or foreign matters, large optical diffraction influence and the like. High lateral resolution (2-4 μm) and longitudinal resolution (200 nm) are required while measuring parameters such as surface profile, geometry and positional deviation. Therefore, the three-dimensional measurement of the surface of the wafer is always the observation of the local topography, and always faces the practical problem that the precision and the efficiency cannot be considered, and the high-precision high-efficiency complete scanning measurement of the three-dimensional topography of the surface of the wafer cannot be realized, so that a high-speed scanning method and a high-speed scanning device are urgently needed to solve the problem of the three-dimensional measurement of the surface of the wafer.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a high-speed measurement method and device for the three-dimensional topography of the surface of a wafer.
In order to achieve the above object, the present invention provides a high-speed measurement method for three-dimensional topography of a wafer surface, comprising:
s1, setting an optical measurement module before measurement;
s2, after the light curtain line corresponding to the optical measurement module is projected to the wafer to be measured, collecting surface reflection light strip data of the wafer to be measured, calculating to obtain an XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as two-dimensional measurement data;
s3, acquiring two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain initial three-dimensional shape information of the wafer to be measured at the current rotation radius;
s4, acquiring initial three-dimensional shape information of the wafer to be detected corresponding to different turning radii of the wafer to be detected;
and S5, after the initial three-dimensional shape information of the wafer to be detected is converted based on a cylindrical coordinate system, splicing to obtain the three-dimensional shape information of the surface of the wafer to be detected.
Preferably, the setting before the measurement of the optical measurement module includes:
and arranging the wafer to be measured under the optical measurement module, wherein the vertical distance between the wafer to be measured and the optical measurement module corresponds to the measuring range of the optical measurement module.
Preferably, the collecting the surface reflection optical stripe data of the wafer to be measured and calculating to obtain the XZ coordinate value corresponding to the current optical curtain line includes:
obtaining a relative Z-direction height value of the surface of the wafer to be detected corresponding to the current light curtain line by utilizing an optical detection method based on a pixel light strip energy extraction technology and reflecting light strip data of the surface of the wafer to be detected, and then obtaining an XZ coordinate value corresponding to the current light curtain line of the wafer to be detected;
wherein, the X coordinate is a coordinate value along the light curtain line direction, and the Z direction is a distance value for resolving the relative reference surface.
Preferably, acquiring the initial three-dimensional morphology information of the wafer to be measured of the current turning radius after acquiring the two-dimensional measurement data of the wafer to be measured at different turning angles comprises:
when the wafer to be measured rotates by a fixed degree theta, the measurement data (x) corresponding to the current rotation angle is collected i , z i )；
Using the corresponding measured data (x) of the current rotation angle under the same radius i , z i ) Obtaining the three-dimensional information (x) of the wafer to be measured at the current radius of gyration i , y i , z i ) And the initial three-dimensional shape information of the wafer to be measured is taken as the current turning radius.
Preferably, after the initial three-dimensional topography information of the wafer to be measured is converted based on the cylindrical coordinate system, the splicing process is performed to obtain the three-dimensional topography information of the surface of the wafer to be measured, and the method comprises the following steps:
the initial three-dimensional shape information (x) of the wafer to be measured corresponding to the optical measurement module i , y i , z i ) Performing cylindrical coordinate system conversion based on the axial lead of the wafer rotating shaft to be detected to obtain basic three-dimensional shape information (r, theta, z) of the wafer to be detected;
and splicing the basic three-dimensional shape information (r, theta, z) of the wafer to be detected corresponding to different turning radii to obtain the surface three-dimensional shape information of the wafer to be detected.
Based on the same invention concept, the invention also provides a high-speed measuring device for the three-dimensional appearance of the surface of the wafer, which comprises a marble base, a motion module and an objective table component, wherein the marble base is provided with the motion module;
the movement module comprises a high-precision air floatation movement X shaft, a high-precision air floatation movement Y shaft, a high-precision movement Z shaft, a high-precision air floatation rotation C shaft and an optical measurement module, wherein the high-precision air floatation movement X shaft and the high-precision air floatation movement Y shaft are stacked on the marble base in a crossed manner, the high-precision air floatation rotation C shaft is arranged above the high-precision air floatation movement X shaft and the high-precision air floatation movement Y shaft, and the high-precision movement Z shaft is arranged on the gantry marble;
the object stage assembly is arranged above the high-precision air floatation rotary C shaft and is connected with the high-precision air floatation rotary C shaft through the inclination adjusting assembly.
Preferably, the optical measurement module is a high-precision high-sampling-rate three-dimensional line sensor.
Compared with the closest prior art, the invention has the following beneficial effects:
the surface of the wafer to be detected is subjected to one-time rotary scanning measurement through a high-precision high-sampling-rate three-dimensional line sensor and a sampling interval lower than the requirement of transverse resolution, so that the problem of high-precision complete scanning measurement of the three-dimensional appearance of the surface of the wafer is effectively solved, the automation integration level in terms of software and hardware is high, the batch measurement of the three-dimensional appearance of the surface of the off-line wafer can be realized, and the high-speed detection of the three-dimensional appearance of the surface of the on-line wafer can also be realized by integrating the three-dimensional line sensor into a production line.
Drawings
FIG. 1 is a flow chart of a high-speed measurement method for three-dimensional topography of a wafer surface according to the present invention;
FIG. 2 is a schematic main view of a high-speed measurement apparatus for measuring three-dimensional topography of a wafer surface according to the present invention;
FIG. 3 is a detailed schematic diagram of a high-speed measurement apparatus for measuring a three-dimensional topography of a wafer surface according to the present invention;
FIG. 4 is a flow chart of the measurement of the high-speed measurement device for the three-dimensional topography of the wafer surface according to the present invention;
FIG. 5 is a schematic diagram of a concentric circle scanning measurement path of a high-speed measurement apparatus for measuring a three-dimensional topography of a wafer surface according to the present invention;
FIG. 6 is a schematic diagram of a spiral line scanning measurement path of a high-speed measurement apparatus for measuring a three-dimensional topography of a wafer surface according to the present invention;
FIG. 7 is a schematic diagram of a centrifugal arc raster scanning measurement path of a high-speed measurement device for three-dimensional topography of a wafer surface according to the present invention;
FIG. 8 is a schematic diagram of the calculation of the time consumption of the centrifugal arc grid scanning measurement of the high-speed measurement device for the three-dimensional topography of the wafer surface provided by the invention;
reference numerals:
1. a marble gantry; 2. an optical measurement module; 3. a wafer to be tested; 4. a marble base; 5. high-precision air floatation motion X axis; 6. high-precision air flotation motion Y axis; 7. high-precision air flotation rotation C shaft; 8. an object stage assembly; 9. a tilt adjustment assembly; 10. high precision motion Z axis; 11. the first circle of scanning line width is indicated; 12. the second circle of scanning line width is indicated; 13. the scanning distance is indicated; 14. scanning a drive line schematic; 15. single scan linewidth schematic.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
the invention provides a high-speed measurement method for the three-dimensional topography of a wafer surface, as shown in figure 1, comprising the following steps:
s1, setting an optical measurement module before measurement;
s2, after the light curtain line corresponding to the optical measurement module is projected to the wafer to be measured, collecting surface reflection light strip data of the wafer to be measured, calculating to obtain an XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as two-dimensional measurement data;
s3, acquiring two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain initial three-dimensional shape information of the wafer to be measured at the current rotation radius;
s4, acquiring initial three-dimensional shape information of the wafer to be detected corresponding to different turning radii of the wafer to be detected;
and S5, after the initial three-dimensional shape information of the wafer to be detected is converted based on a cylindrical coordinate system, splicing processing is carried out to obtain the three-dimensional shape information of the surface of the wafer to be detected.
In this embodiment, in a method for measuring a three-dimensional topography of a wafer surface at a high speed, the optical measurement module is carried by the motion module to move above the wafer to be measured, and a vertical distance therebetween satisfies a measurement range of the optical measurement module.
S1 specifically comprises the following steps:
s1-1, arranging a wafer to be measured under an optical measurement module, wherein the vertical direction distance between the wafer to be measured and the optical measurement module corresponds to the measuring range of the optical measurement module.
S2 specifically comprises the following steps:
s2-1, obtaining a relative Z-direction height value of the surface of the wafer to be detected corresponding to the current light curtain line by utilizing the surface reflection light strip data of the wafer to be detected based on an optical detection method of a pixel lower light strip energy extraction technology, and then obtaining an XZ coordinate value corresponding to the current light curtain line of the wafer to be detected;
the X coordinate is a coordinate value along the light curtain line direction, and the Z direction is a distance value which is calculated by the optical measurement module and is relative to the reference surface.
S3 specifically comprises the following steps:
s3-1, when the wafer to be detected rotates by a fixed degree theta, acquiring measurement data (x) corresponding to the current rotation angle i , z i )；
S3-2, utilizing the measured data (x) corresponding to the current rotation angle under the same radius i , z i ) Obtaining the three-dimensional information (x) of the wafer to be measured at the current radius of gyration i , y i , z i ) And the initial three-dimensional shape information of the wafer to be measured is used as the current turning radius.
In this embodiment, in the high-speed measurement method for the three-dimensional topography of the wafer surface, the wafer to be measured is a circular sheet structure, so a rotation/near rotation type scanning mode can be set according to the structural characteristics, the wafer to be measured is carried by the high-precision air floatation rotation C-axis to perform rotation motion, the encoder triggers the optical measurement module to acquire and record one measurement datum (x is used for acquiring and recording one measurement datum every time the motion module rotates for every fixed degree theta) of motion i , z i ) And realizing the acquisition and recording of the three-dimensional information (x) of the current gyration radius position of the surface of the wafer to be detected at equal intervals i , y i , z i )。
In this embodiment, a method for measuring a three-dimensional topography of a wafer surface at a high speed includes that a three-dimensional scanning measurement area between adjacent turning radius positions in a wafer to be measured has a certain overlap range, and a calculation formula of the overlap range is as follows:
wherein ,kin the form of an overlapping range of values,Lin order to measure the line width of the sensor,r i the radius of gyration of the wafer to be measured,r i+1 the next adjacent turning radius of the wafer to be measured.
S5 specifically comprises the following steps:
s5-1, carrying out initial three-dimensional shape information (x) of the wafer to be measured corresponding to the optical measurement module i , y i , z i ) Performing cylindrical coordinate system conversion based on the axial lead of the wafer rotating shaft to be detected to obtain basic three-dimensional shape information (r, theta, z) of the wafer to be detected;
s5-2, splicing the basic three-dimensional shape information (r, theta, z) of the wafer to be detected corresponding to different turning radii to obtain the surface three-dimensional shape information of the wafer to be detected.
Example 2:
the invention provides a high-speed measuring device for the three-dimensional appearance of the surface of a wafer, which comprises a marble base 4, a motion module and an objective table component 8, wherein the marble base 4 is provided with the motion module; as shown in fig. 3, the movement module comprises a high-precision air-floating movement X-axis 5, a high-precision air-floating movement Y-axis 6, a high-precision movement Z-axis 10, a high-precision air-floating rotation C-axis 7 and an optical measurement module 2, wherein the high-precision air-floating movement X-axis 5 and the high-precision air-floating movement Y-axis 6 are stacked on the marble base 4 in a crisscross manner, the high-precision air-floating rotation C-axis 7 is arranged above the high-precision air-floating movement X-axis 5 and the high-precision air-floating movement Y-axis 6, and the high-precision movement Z-axis 10 is arranged on the marble gantry 1; the objective table assembly 8 is arranged above the high-precision air-floatation rotary C shaft 7 and is connected with the high-precision air-floatation rotary C shaft 7 through an inclination adjusting assembly 9; the optical measurement module 2 is a high-precision high-sampling-rate three-dimensional line sensor.
Example 3:
the invention provides a practical application method for high-speed measurement of three-dimensional topography of a wafer surface, which comprises the following steps:
step 1: the optical measurement module is carried by the movement module to move to the position above the wafer to be measured, and the vertical distance of the optical measurement module meets the measurement range of the optical measurement module.
And 2, step: and the optical measurement module projects a measurement light curtain line to irradiate the surface of the wafer to be measured, and the information of the reflection light strip on the surface of the wafer to be measured returns to the optical measurement module. The optical detection method based on the light energy extraction technology under the pixel accurately maps the wavelength of the pixel to the distance between a measured object and a sensor, calculates and reconstructs a relative Z-direction height value of the surface of the wafer to be measured under the current light curtain line coverage, and obtains an XZ coordinate value of the surface of the wafer to be measured under the current light curtain line coverage.
The X coordinate is a coordinate value along the light curtain line direction, and the Z direction is a distance value calculated by the optical measurement module relative to a reference surface.
And 3, step 3: the wafer to be measured is of a circular sheet structure, so that a rotary/near-rotary scanning mode can be set according to the structural characteristics of the wafer, the wafer to be measured is carried by the high-precision air floatation rotary C shaft to perform rotary motion, the encoder triggers once every time the motion module rotates for a fixed degree theta, and the optical measurement module collects and records a piece of measurement data (x is the x of the measurement data i , z i ) And realizing the acquisition and recording of the three-dimensional information (x) of the current gyration radius position of the surface of the wafer to be detected at equal intervals i , y i , z i )。
And 4, step 4: the rotary motion of a high-precision air floatation rotary C shaft in the motion module is matched with the horizontal motion of the high-precision air floatation motion XY shaft to realize different rotary radiuses r in the wafer to be detected i And (4) measuring three-dimensional scanning under the position.
Wherein, the three-dimensional scanning measurement area between adjacent turning radius positions in the wafer to be measured has a certain overlapping range, and the overlapping range is [ L- (r) i+1 - r i )]L × 100%, L being the measured line width of the optical sensor.
And 5: and repeating the step 2 to the step 4, unifying the measurement data (x, y, z) under the optical measurement module Cartesian coordinate system to the cylindrical coordinate system (r, theta, z) around the rotation axis of the high-precision air floatation rotation C shaft, and splicing and combining the scanning data under different radiuses to obtain the complete three-dimensional shape information of the surface of the wafer to be measured.
Example 4:
the invention provides a measuring method of a high-speed measuring device for the three-dimensional topography of a wafer surface, as shown in figure 4, comprising the following steps:
(1) When the measurement is started, the wafer 3 to be measured is firstly loaded onto the objective table assembly 8 through an automatic loading device.
(2) And controlling the movement module to carry the wafer 3 to be measured to move to the working distance range of the optical measurement module 2, and setting sensor measurement parameters including the measurement of light curtain line distance, the Z-direction measurement distance, exposure intensity, acquisition frame rate and measurement length.
(3) Based on the movement module, the wafer 3 to be measured is carried and the optical measurement module 2 sets automatic measurement path planning, and the method comprises the following specific steps: firstly, parameter setting is carried out according to parameters such as the geometric dimension of a wafer, the line width of the optical measurement module and the overlapping range, then the type of a path is selected, and a rotation type scanning measurement path of the motion module in the measurement system is determined and generated, wherein the specific path is introduced as an example.
(4) And clicking a measurement starting button, and carrying out full-automatic high-speed scanning measurement on the surface of the wafer 3 to be measured under the automatic measurement path planning, and scanning to obtain the three-dimensional appearance of the surface of the complete wafer.
(5) And carrying out data processing on the obtained three-dimensional surface morphology of the wafer, wherein the data processing comprises common Gaussian filtering denoising and three points form a reference surface to correct the gradient of the point cloud. Realizing parameter analysis and evaluation, wherein the specific parameter evaluation treatment comprises the following steps:
1) Finding three points on a reference surface, calculating a plane of Ax + By + Cz + D =0 through a formula, measuring the three points on the three-dimensional point cloud on the surface of the wafer, calculating distances D1, D2 and D3 between the three points and the plane through the formula, and calculating the three points to obtain final flatness;
2) Calculating and evaluating the surface roughness information of the wafer based on the international standard of the ISO 25178 surface roughness Sa and ISO 4287 surface line roughness evaluation method;
3) Based on the international organization for standardization ISO5436-1: calculating and evaluating the step height of the wafer surface measurement data according to the 2000 standard;
4) And selecting the line width at a position which is one half of the structure height from the bottom in the direction vertical to the line width, namely the middle line width, as the measured data line width of the wafer surface.
(6) The measurement results are kept in a archive.
(7) And finally, discharging the wafer 3 to be measured through an automatic feeding device, and finishing measurement.
Based on the embodiment of the disclosure, various rotary wafer scanning measurement paths can be set, the line width length of the optical measurement module is limited, and the complete scanning measurement of the three-dimensional topography of the surface of the wafer can be realized only by multiple rotary grid scanning. In order to ensure the high-speed scanning measurement of the three-dimensional shape of the surface of the wafer, the time consumption of complete three-dimensional scanning of a single wafer can be effectively reduced by reducing the scanning traversal times and the scanning arc length. Therefore, good wafer measurement path planning is crucial to efficient scanning measurement, and specific examples are as follows:
example 1:
as shown in fig. 5, a classical concentric circle grid rotation scanning measurement method adopts a scanning drive line schematic 14 form of concentric circles with different radii to perform surface three-dimensional topography scanning measurement on a wafer 3 to be measured, and the time for complete scanning measurement is as follows:
wherein ,Ris the radius of the wafer 3 to be measured,△Pthe drive line direction intervals are scanned for the optical measurement module 2,Lthe line width is scanned for the optical measurement module 2,△x 1 for the optical measurement module 2 to scan the line lateral spacing,△x 1 ≤L，vfor the scanning speed of the optical measuring module 2,ithe number of scanning turns.
Example 2:
the concentric circle grid rotary scanning measurement mode needs to completely scan the maximum outer diameter of the wafer 3 to be measured, and the consumed time is long. Therefore, in order to reduce the scanning time, the scanning measurement of the three-dimensional surface topography of the wafer 3 to be measured is performed by using the spiral scanning driving line mode, as shown in fig. 6, all the time of the complete scanning measurement is as follows:
wherein ,Ris the radius of the wafer 3 to be measured,△Pscanning the drive line direction interval, Δ, for the optical measurement module 2x 2 For the optical measurement module 2 to scan the line lateral spacing,vfor the scanning speed of the optical measuring module 2,ithe number of scanning turns.
Comparing example 1 with example 2, in order to ensure that the scanning line of the optical measurement module 2 can traverse the whole wafer 3 to be measured,△x 2 ＜△x 1 ≤ L，the time consumption of the wafer spiral line scanning drive line mode is as peri×△x 2 The scan for the lower half circumference of the radius. Compared with the concentric circle grid rotary scanning measurement mode, the wafer spiral line scanning drive line mode obviously reduces the maximum outer diameter scanning time consumption of the wafer 3 to be measured, so that the time consumption of the wafer spiral line scanning drive line mode is superior to that of the concentric circle grid rotary scanning measurement mode under the same measurement condition.
Example 3:
in order to further reduce the time consumption for completely scanning the three-dimensional shape of the wafer 3 to be detected. The present disclosure provides a novel centrifugal arc grid scanning manner to scan and measure the three-dimensional surface topography of the wafer 3 to be measured, as shown in fig. 8. The calculation principle of the time consumption of the centrifugal circular arc raster scanning measurement is shown in FIG. 7, and the time consumption of the centrifugal circular arc raster scanning measurement is determined for each timei×△x 1 When scanning the arc length under the radius, the complete scan measurement all times are as follows:
wherein ,Ris the radius of the wafer 3 to be measured,△Pscanning the drive line direction interval for the optical measurement module 2x 1 For the optical measurement module 2 to scan the line lateral spacing,vfor the scanning speed of the optical measuring module 2,ithe number of the scanning turns is the number of the scanning turns,Lthe line width is scanned for the optical measurement module 2,L 1 is the centrifugal quantity of the centrifugal arc grid scanning mode, angle AO 2 E is arc length AE circleHeart angle degree, angle AO 2 O 1 Is < AO 2 And B outer angle.
Comparing the example 2 with the example 3, the time consumed by the optical measurement module 2 to traverse the whole wafer 3 to be measured in a centrifugal circular grid scanning manner is 2R-i△x 1 ) The scan at arc length is time consuming. The total length of the arc length of the centrifugal arc grid is less than that of the spiral scanning driving line in example 2 (i×△x 2 ) The total of the semi-circle lengths, therefore, under the same measurement condition, the time consumption of the centrifugal circular arc grid scanning mode of the wafer is superior to that of the spiral line scanning driving line mode. The centrifugal circular arc grid scanning mode for the wafer disclosed by the embodiment can realize high-efficiency scanning and measuring of the complete three-dimensional shape of the surface of the wafer on the premise of ensuring 2-hundred-nanometer-scale measurement accuracy of the optical measurement module.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Finally, it should be noted that: although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which is to be covered by the claims.
Claims (7)
1. A high-speed measurement method for three-dimensional topography of a wafer surface is characterized by comprising the following steps:
s1, setting an optical measurement module before measurement;
s2, after the light curtain line corresponding to the optical measurement module is projected to the wafer to be measured, collecting surface reflection light strip data of the wafer to be measured, calculating to obtain an XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as two-dimensional measurement data;
s3, acquiring two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain initial three-dimensional shape information of the wafer to be measured at the current rotation radius;
s4, acquiring initial three-dimensional shape information of the wafer to be detected corresponding to different turning radii of the wafer to be detected;
and S5, after the initial three-dimensional shape information of the wafer to be detected is converted based on a cylindrical coordinate system, splicing processing is carried out to obtain the three-dimensional shape information of the surface of the wafer to be detected.
2. The method of claim 1, wherein the pre-measurement setup of the optical measurement module comprises:
and arranging the wafer to be measured under the optical measurement module, wherein the vertical distance between the wafer to be measured and the optical measurement module corresponds to the measuring range of the optical measurement module.
3. The method according to claim 1, wherein the collecting surface reflection optical stripe data of the wafer to be measured and calculating the XZ coordinate value corresponding to the current optical curtain line comprises:
obtaining a relative Z-direction height value of the surface of the wafer to be detected corresponding to the current light curtain line by utilizing an optical detection method based on a pixel light strip energy extraction technology and reflecting light strip data of the surface of the wafer to be detected, and then obtaining an XZ coordinate value corresponding to the current light curtain line of the wafer to be detected;
wherein, the X coordinate is a coordinate value along the light curtain line direction, and the Z direction is a distance value for resolving the relative reference surface.
4. The method according to claim 1, wherein the acquiring of the two-dimensional measurement data of the wafer to be measured at different rotation angles to obtain the initial three-dimensional topography information of the wafer to be measured at the current rotation radius comprises:
when the wafer to be measured rotates by a fixed degree theta, the measurement data (x) corresponding to the current rotation angle is collected i , z i )；
Using the corresponding measured data (x) of the current rotation angle under the same radius i , z i ) Obtaining the three-dimensional information (x) of the wafer to be measured at the current radius of gyration i , y i , z i ) As the current radius of gyrationAnd measuring the initial three-dimensional shape information of the wafer.
5. The method as claimed in claim 1, wherein obtaining the three-dimensional topography information of the wafer surface by performing a stitching process after transforming the initial three-dimensional topography information of the wafer based on a cylindrical coordinate system comprises:
the initial three-dimensional shape information (x) of the wafer to be measured corresponding to the optical measurement module i , y i , z i ) Performing cylindrical coordinate system conversion based on the axial lead of the rotating shaft of the wafer to be detected to obtain basic three-dimensional morphology information (r, theta, z) of the wafer to be detected;
and splicing the basic three-dimensional shape information (r, theta, z) of the wafer to be detected corresponding to different turning radii to obtain the surface three-dimensional shape information of the wafer to be detected.
6. A high-speed measuring device for the three-dimensional morphology of a wafer surface is characterized by comprising a marble base, a motion module and an objective table assembly, wherein the marble base is provided with the motion module;
the movement module comprises a high-precision air floatation movement X shaft, a high-precision air floatation movement Y shaft, a high-precision movement Z shaft, a high-precision air floatation rotation C shaft and an optical measurement module, wherein the high-precision air floatation movement X shaft and the high-precision air floatation movement Y shaft are stacked on the marble base in a crossed manner, the high-precision air floatation rotation C shaft is arranged above the high-precision air floatation movement X shaft and the high-precision air floatation movement Y shaft, and the high-precision movement Z shaft is arranged on the gantry marble;
the object stage assembly is arranged above the high-precision air floatation rotary C shaft and is connected with the high-precision air floatation rotary C shaft through the inclination adjusting assembly.
7. The apparatus of claim 6, wherein the optical measurement module is a high-precision high-sampling-rate three-dimensional line sensor.
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| PCT/CN2022/141809 WO2024108721A1 (en) | 2022-11-21 | 2022-12-26 | High-speed measurement method and device for three-dimensional surface topography of wafer |
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