WO2024104727A1 - Ensemble d'un système optique - Google Patents

Ensemble d'un système optique Download PDF

Info

Publication number
WO2024104727A1
WO2024104727A1 PCT/EP2023/079438 EP2023079438W WO2024104727A1 WO 2024104727 A1 WO2024104727 A1 WO 2024104727A1 EP 2023079438 W EP2023079438 W EP 2023079438W WO 2024104727 A1 WO2024104727 A1 WO 2024104727A1
Authority
WO
WIPO (PCT)
Prior art keywords
assembly according
heat
mirror
path
conduction path
Prior art date
Application number
PCT/EP2023/079438
Other languages
German (de)
English (en)
Inventor
Markus Holz
Stefan Walz
Original Assignee
Carl Zeiss Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of WO2024104727A1 publication Critical patent/WO2024104727A1/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
    • G02B7/1815—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation with cooling or heating systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Definitions

  • the invention relates to an assembly of an optical system.
  • Microlithography is used to produce microstructured components, such as integrated circuits or LCDs.
  • the microlithography process is carried out in a so-called projection exposure system, which has an illumination device and a projection lens.
  • a substrate e.g. a silicon wafer
  • a light-sensitive layer photoresist
  • facet mirrors in the form of field facet mirrors and pupil facet mirrors as bundle-guiding components is known in particular, e.g. from DE 10 2008 009 600 A1.
  • Such facet mirrors are constructed from a large number of mirror elements or mirror facets, each of which can be designed to be tiltable via solid-state joints for the purpose of adjustment or to realize certain illumination angle distributions.
  • These mirror facets can in turn comprise a plurality of micromirrors.
  • mirror arrangements e.g.
  • WO 2005/026843 A2 which comprise a plurality of independently adjustable micromirrors, is also known in an illumination device of a microlithographic projection exposure system designed for operation at wavelengths in the VUV range for setting defined illumination settings (i.e. intensity distributions in a pupil plane of the illumination device).
  • a problem that occurs in practice is that the EUV mirrors or mirror elements heat up and experience thermal expansion or deformation as a result of, among other things, the absorption of the radiation emitted by the EUV light source, which in turn can impair the imaging properties of the optical system.
  • Various approaches are known to prevent surface deformations caused by heat input into an EUV mirror and the associated optical aberrations, in particular active direct cooling of the mirrors or mirror elements.
  • a problem that occurs in practice with active cooling of the above-mentioned mirrors or mirror elements is that with increasing power of the light source, achieving sufficiently efficient heat dissipation while still ensuring high precision of the mirrors or mirror elements elements represents a demanding challenge. What is particularly problematic is that the heat dissipation must take place while ensuring tightness to maintain the vacuum conditions in the area surrounding the mirror array, while at the same time the electrical supply lines required to control the mirror elements must be led from a control electronics arrangement located outside this vacuum in the ambient or clean room atmosphere to the mirror arrangement.
  • the assembly to be provided for the mechanical mounting and control of the mirror array is highly sensitive to deformation in that thermally induced deformation associated with the heating of the mirror elements by incident electromagnetic radiation, but also with parasitic heat from the electronic components, ultimately leads to a tilting of the mirror elements and thus to optical aberrations, which impairs the performance of the optical system or the projection exposure system.
  • a mirror array which is designed as a MEMS mirror arrangement with a plurality of independently actuatable mirror elements in the form of MEMS mirrors;
  • the invention is based in particular on the concept of implementing a positioning path for mechanically fixing the position of the mirror elements in an assembly having a mirror array with a plurality of mirror elements, spatially separated from a heat conduction path for heat dissipation, with the result that thermal deformations that inevitably occur along the heat conduction path have no significant influence on the position stability of the mirror elements - which is achieved or maintained via the separate mechanical positioning path.
  • the mirror array is designed as a MEMS mirror arrangement, i.e. as a mirror array arrangement comprising micro-electro-mechanical systems (MEMS), which has a large number of individually actuatable mirror elements or MEMS mirrors.
  • MEMS micro-electro-mechanical systems
  • a comparatively flexible design or flexible connection to the cooler along the heat conduction path can be combined with a comparatively rigid design of the mechanical positioning path.
  • the invention makes use of the fact that due to the functional separation of heat dissipation and mechanical positioning according to the invention, on the one hand the positioning is relieved of the heat conduction and on the other hand the heat conduction path is separated from the mechanical positioning is decoupled. Deformations caused in the heat conduction path therefore have no effect on the positioning accuracy or stability of the mirror elements due to the mechanical flexibility. Conversely, according to the invention, a rigid connection of the mirror array is required along the mechanical positioning path, but no significant heat conduction and thus no thermally induced deformations occur along this positioning path, since the heat takes the path via the separate heat conduction path as described above. In particular, according to the invention, the positioning path can even be deliberately designed with comparatively poor thermal conductivity.
  • vibrations occurring on the cooler side only have a reduced influence on the position stability of the mirror elements, since the cooler is only connected via the comparatively flexible heat conduction path, but not via the mechanical positioning path, and in particular can be mechanically decoupled from the mirror array or a support structure of the assembly that is firmly connected to it. Thermally induced deformations or assembly tolerances of the cooler can be partially or completely decoupled.
  • the heat conduction path runs over at least one mechanically flexible heat-conducting element.
  • the at least one flexible heat-conducting element comprises a heat pipe or at least one heat-conducting mechanically decoupling solid-state joint, in particular at least one strand made of a heat-conducting material, e.g. copper (Cu).
  • a heat-conducting material e.g. copper (Cu).
  • a thermal resistance of the heat pipe can be variably adjusted. This also allows temperature control to be implemented, i.e., in addition to cooling the mirror array with a constant cooling output, its temperature can also be specifically adjusted.
  • the assembly has an interface component which is designed as a solid-state joint with a decoupling geometry.
  • a stiffness present along the mechanical positioning path is greater by at least a factor of 10, in particular by at least a factor of 100, than a stiffness present along the thermal conduction path.
  • a thermal conductivity present along the thermal conduction path is greater by at least a factor of 10, in particular by at least a factor of 100, than a thermal conductivity present along the mechanical positioning path.
  • At least one region for thermal insulation is formed in the mechanical positioning path, which region has a thermal conductivity of less than 10 W/(m K), in particular less than 1 W/(m K). This is advantageous in that the mechanical positioning path is then deliberately designed with a comparatively poor thermal conductivity and thus the proportion of heat that flows away from the mirror array via the thermal conduction path is increased or maximized.
  • the heat conduction path runs via a controller that serves to control the mirror elements.
  • the mirror array is arranged on a ceramic carrier in which control leads to the mirror elements run.
  • the ceramic carrier is fixed on a support structure for separating a vacuum atmosphere present in the environment of the mirror array from a non-vacuum atmosphere present in the environment of the cooler.
  • this support structure is mechanically decoupled from the cooler via at least one decoupling element.
  • a control electronics arrangement is fixed to the cooler. This enables direct and therefore particularly effective cooling of this control electronics arrangement and at the same time exploits the fact that the connection of the control electronics arrangement to the cooler can be realized entirely in a non-vacuum atmosphere, i.e., non-vacuum-compatible standard components can be used.
  • a heat spreader is arranged in the heat conduction path (in particular between the mechanically flexible heat-conducting element and the cooler). This can improve the heat transfer from the mechanically flexible heat-conducting element to the cooler.
  • the mirror array is designed for an operating wavelength of less than 30 nm, in particular less than 15 nm.
  • the invention further relates to an optical system, in particular a microlithographic projection exposure system, with an assembly with the features described above, as well as a microlithographic projection exposure system with such an optical system.
  • Figure 1 is a schematic representation to explain the structure and functioning of an assembly of an optical system in an exemplary embodiment of the invention
  • Figure 2 is a schematic representation to explain a further embodiment of an assembly according to the invention.
  • Figure 3 is a schematic representation of a further embodiment of an assembly according to the invention.
  • Figures 4a-4b are schematic representations of a further embodiment of an assembly according to the invention.
  • Figures 5a-5e are schematic representations to explain a possible method for assembling an assembly according to the invention.
  • Figure 6 shows a schematic representation of the possible structure of a microlithographic projection exposure system designed for operation in the EUV.
  • a mechanical positioning path is implemented spatially separately from a heat conduction path used to dissipate heat from the mirror array, i.e. with regard to the mirror array, a functional separation of the heat dissipation on the one hand and the mechanical positioning on the other hand is implemented.
  • the path of the electrical contact is preferably also implemented separately from the heat conduction path and the positioning, so that there is no parasitic interaction in this respect either.
  • Fig. 1 first shows a schematic representation to explain the possible structure of an assembly according to the invention and the above-mentioned principle on which the invention is based.
  • a mirror array 1 10 is attached to a ceramic carrier 1 1 1.
  • the mirror array 1 10 has, in a manner known per se, a plurality of mirror elements in the form of microelectromechanical systems (so-called “MEMS mirrors”), which are not shown in detail in Fig. 1 for the sake of simplicity and whose respective mirrors are designed in a manner known per se to be individually actuated or independently adjustable via actuators (also not shown in Fig. 1), for which purpose corresponding electrical leads are led through the ceramic carrier 1 1 1 to the mirror array 1 10.
  • MEMS mirrors microelectromechanical systems
  • the material of the ceramic carrier 1 1 1 is a material of comparatively good thermal conductivity (eg greater than 100 W/(m K)), eg an aluminum nitride ceramic with a thermal conductivity of approximately 170 W/(m K).
  • a mechanical positioning path (as shown by the dashed arrow) runs from the ceramic carrier 1 1 1 along a further ceramic component 1 12 to a support structure 1 14.
  • “113” designates a seal between the ceramic component 1 12 and the support structure 1 14.
  • the support structure 1 14 and the ceramic carrier 1 1 1 separate a vacuum atmosphere present in the vicinity of the mirror array 1 10 from a non-vacuum atmosphere (e.g. clean room atmosphere).
  • the ceramic material of the ceramic component 1 12 is a material with comparatively poor thermal conductivity, e.g. an aluminum oxide ceramic with a thermal conductivity of approximately 35 W/(m K).
  • the connection between the ceramic carrier 111 and the ceramic component 112 is preferably made with a material that deliberately has very poor thermal conductivity (less than 5 W/(m K), in particular less than 1 W/(m K)).
  • a thermal conduction path (shown in Fig. 1 by the solid arrow) runs spatially separately from the mechanical positioning path from the ceramic carrier 1 1 1 via a flexible thermally conductive element.
  • this flexible thermally conductive element is designed as a heat pipe 130 and leads to a cooler 120, which has cooling channels 120a through which a cooling fluid can flow in a manner known per se.
  • "135" and "136" each designate suitable interface components made of a material with good thermal conductivity (e.g. copper), via which the flexible thermally conductive element or the heat pipe 130 is mechanically coupled - and thermally as well as possible - to the ceramic carrier 1 1 1 on the one hand and to the cooler 120 on the other.
  • the dotted arrow shows an electrical path that is separate from both the mechanical positioning path and the heat conduction path, via which the electrical control of the mirror array 110 takes place, as described in more detail below.
  • “141” is a control electronics Arrangement which is attached directly to the cooler 120. Therefore, no additional cooler is required.
  • Fig. 2 shows a schematic representation to explain a further embodiment of the assembly according to the invention, wherein, in comparison to Fig. 1, analogous or essentially functionally identical components are designated with reference numerals increased by “100”.
  • the heat conduction path runs via a controller 250, to which the electrical supply lines designated "242" in Fig. 2 and running within the ceramic carrier 211 are fixed (e.g. glued or soldered).
  • the controller 250 is also coupled to the heat pipe 230 via an interface component 235 made of a material with good heat conduction (e.g. copper).
  • the coupling between the heat pipe 230 and the interface component 235 can be realized via a soldered connection.
  • a suitable thermal interface layer can be used, which provides good thermal conductivity with a mechanically flexible coupling between the controller 250 and the interface component 235.
  • the fact that the controller 250 or the corresponding soldered or adhesive connections to the supply lines 242 are in a non-vacuum atmosphere can be exploited and, as a result, standard components that are not suitable for vacuum can be used.
  • the contacting of the supply lines 242 on the mirror array 210 takes place as a vacuum-compatible connection (e.g. silver adhesive).
  • the invention is not limited to the arrangement of the controller 250 described with reference to Fig. 2.
  • TSV “Through Silicon Vias”
  • the mechanical positioning path according to Fig. 2 runs essentially analogously to Fig. 1 in the area of the side surfaces of the assembly and in particular again over a ceramic component 212 (e.g. made of aluminum oxide ceramic) with comparatively poor heat conduction, wherein according to Fig. 2 an additional area 246 for thermal decoupling is provided in the mechanical positioning path.
  • this area 246 is located between the ceramic component 212 and the ceramic carrier 211 and can be implemented, for example, as an adhesive with comparatively poor heat conduction (in particular less than 10 W/(m K), preferably less than 1 W/(m K)).
  • “251” and “252” designate electronic components such as connectors, capacitors and resistors arranged in the area of the controller 250.
  • a potting compound 247 can optionally be used to improve the heat flow from the ceramic carrier 21 1 via the interface component 235.
  • Fig. 3 shows a further schematic representation of an assembly according to the invention in a further embodiment, wherein, in comparison to Fig. 2, analogous or essentially functionally identical components are designated with reference numerals increased by “100”.
  • a region of the interface component 335 is designed as a solid-state joint with a suitable decoupling geometry.
  • the interface component 335 has laterally arranged curved sections which press against the ceramic carrier 31 1.
  • contact forces can be generated in a controlled manner in the horizontal direction from the interface component 335 to the ceramic carrier 31 1, which improve the thermal contact when heated.
  • the mechanical decoupling in the vertical direction By means of sliding surfaces (e.g. connected with thermal paste), the introduction of undesirable mechanical stresses or deformations due to the non-positive contact between materials with different thermal expansion coefficients (interface component 335 or ceramic carrier 31 1 ) is avoided.
  • Fig. 4a-4b show schematic representations of an assembly according to the invention, wherein, compared to Fig. 3, analogous or essentially functionally identical components are again designated with reference numbers increased by "100".
  • Fig. 4 shows the thermal coupling of the heat pipe 430 to the cooler 420, which according to Fig. 4a-4b takes place via a heat spreader 436, and the mechanical connection of the assembly to the support structure 414 using a clamping device 415.
  • the defined pressing of the seals 413 by means of a mechanical stop from the ceramic component 412 to the support structure 414.
  • the heat is dissipated via cooling fins, which are each arranged within a cooling channel 420a of the cooler 420 through which cooling fluid (e.g.
  • the heat spreader 436 can be made of a metallic material such as copper or can also be designed with heat pipes. As a result, the heat spreader 436 increases the area over which heat can be given off to the cooling fluid flowing in the cooling channel 420a. To improve the thermal connection of the heat pipe 430 to the heat spreader 436, the heat pipe 430 can be flattened in the relevant end section as indicated in Fig. 4a-4b. The cooling fins in the cooling channel 420a increase the contact area with the cooling fluid and support a laminar cooling fluid flow.
  • the heat spreader 436 and cooling fins can be pre-assembled to the heat pipe 430, for example by soldering, which can create a good thermal connection.
  • the cooling channel 420a is closed by mounting the heat spreader 436 on the cooling channel 420a, for example using screws 450 (see Fig. 4b), thus closing the open side of the cooling channel 420a.
  • the seals 433 seal the cooling channel 420a.
  • care must be taken to avoid the occurrence of electrocorrosion in the cooling circuit caused by different metallic materials. This can be achieved by ensuring that the cooling fluid or cooling water only comes into direct contact with steel or aluminum, for which purpose, according to Fig. 4a, a comparatively thin steel plate 437 can be arranged between the heat spreader 436 (made of copper, for example) on the one hand and the cooling fluid on the other hand.
  • more than just one flexible heat-conducting element in particular more than one heat pipe 130-430, can be used.
  • the heat pipe in question can also be variably adjustable with regard to its thermal resistance.
  • the mirror array can not only be cooled, but the temperature of the mirror array can be specifically adjusted variably and thus kept constant, for example to take account of a varying heat load due to incident (EUV) radiation, to reduce thermal drift of the electronic arrangement or to control the temperature of the reflection layer on the mirror elements to reduce or mitigate temperature-dependent oxidation risks.
  • EUV incident
  • An essential feature of this assembly process is in particular that manufacturing steps at higher temperatures in the range of 500-600°C or above are limited to the manufacture of the ceramic carrier 31 1 with the supply lines 342 located therein, whereas subsequent manufacturing steps all require significantly lower temperatures.
  • the controller 350 and the other components (capacitors, resistors and connectors) 351 - 352 are first soldered on as shown in Fig. 5b, with the corresponding soldering processes being able to be carried out at temperatures in the order of 300°C.
  • An adhesive process at a curing temperature of approx. 100°C is also possible.
  • the interface component 335 and the heat pipe 330 are assembled as shown in Fig. 5c.
  • the connection between the interface component 335 and the heat pipe 330 e.g. by means of a soldering process
  • the connection between the interface component 335 and the heat pipe 330 is preferably already prefabricated so that the comparatively high temperatures required for this connection do not affect the existing electronics of the assembly.
  • the assembly of the correspondingly prefabricated arrangement of the interface component 335 and the heat pipe 330 to the ceramic carrier 31 1 in particular can then be carried out “coldly” (e.g. via a screw, adhesive or clamp connection).
  • the additional ceramic component 312 (made of aluminum oxide in the exemplary embodiment) is then glued on as an adhesive connection using the previously mentioned adhesive with low thermal conductivity (corresponding to the area 346).
  • the ceramic component 312 is also prefabricated here, so that the previously integrated components of the assembly are not exposed to the high temperatures required for sintering the ceramic and the introduction of thermally induced stresses by cooling from the sintering temperature to room temperature is avoided.
  • the mirror array 310 is attached to the ceramic carrier 311 (typically as an adhesive connection using an electrically conductive adhesive).
  • the ceramic carrier 311 typically as an adhesive connection using an electrically conductive adhesive.
  • Fig. 6 shows a schematic meridional section of the possible structure of a microlithographic projection exposure system designed for operation in the EUV, in which the invention can be implemented, for example.
  • the projection exposure system 1 has an illumination device 2 and a projection lens 10.
  • One embodiment of the illumination device 2 of the projection exposure system 1 has, in addition to a light or radiation source 3, an illumination optics 4 for illuminating an object field 5 in an object plane 6.
  • the light source 3 can also be provided as a module separate from the other illumination device. In this case, the illumination device does not comprise the light source 3.
  • a reticle 7 arranged in the object field 5 is exposed.
  • the reticle 7 is held by a reticle holder 8.
  • the reticle holder 8 can be moved in particular in a scanning direction via a reticle displacement drive 9.
  • a Cartesian xyz coordinate system is shown in Fig. 6 for explanation purposes.
  • the x-direction runs perpendicular to the drawing plane.
  • the y-direction runs horizontally and the z-direction runs vertically.
  • the scanning direction in Fig. 6 runs along the y-direction.
  • the z-direction runs perpendicular to the object plane 6.
  • the projection lens 10 is used to image the object field 5 into an image field 11 in an image plane 12.
  • a structure on the reticle 7 is imaged onto a light-sensitive layer of a wafer 13 arranged in the area of the image field 11 in the image plane 12.
  • the wafer 13 is held by a wafer holder 14.
  • the wafer holder 14 can be displaced via a wafer displacement drive 15, in particular along the y-direction.
  • the displacement of the reticle 7 on the one hand via the reticle displacement drive 9 and the wafer 13 on the other hand via the wafer displacement drive 15 can be synchronized with one another.
  • the radiation source 3 is an EUV radiation source.
  • the radiation source 3 emits in particular EUV radiation, which is also referred to below as useful radiation or illumination radiation.
  • the useful radiation has in particular a wavelength in the range between 5 nm and 30 nm.
  • the radiation source 3 can be, for example, a plasma source, a synchrotron-based radiation source or a free-electron laser (“free-electron laser”, FEL).
  • the illumination radiation 16 emanating from the radiation source 3 is bundled by a collector 17 and propagated through an intermediate focus in an intermediate focal plane 18 into the illumination optics 4.
  • the illumination optics 4 have a deflection mirror 19 and, downstream of this in the beam path, a first facet mirror 20 (with schematically indicated facets 21) and a second facet mirror 22 (with schematically indicated facets 23). These facet mirrors can be realized in particular in the manner according to the invention.
  • the projection lens 10 has six mirrors M1 to M6. Alternatives with four, eight, ten, twelve or a different number of mirrors Mi are also possible.
  • the penultimate mirror M5 and the last mirror M6 each have a passage opening for the illumination radiation 16.
  • the projection lens 10 is a double-obscured optic.
  • the projection lens 10 has a numerical aperture on the image side that is greater than 0.5 and can also be greater than 0.6 and can be, for example, 0.7 or 0.75.
  • the invention is not limited to application in a projection exposure system designed for operation in the EUV.
  • the invention can also be used in a projection exposure system designed for operation in the DUV (ie at wavelengths less than 250 nm, in particular less than 200 nm). projection exposure system or in another optical system.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un ensemble d'un système optique, comprenant un réseau de miroirs (110, 210, 310), qui est conçu sous la forme d'un agencement de miroir MEMS ayant une pluralité d'éléments de miroir actionnables indépendamment sous la forme de miroirs MEMS, un trajet de positionnement mécanique, par l'intermédiaire duquel la position des éléments de miroir peut être fixée mécaniquement, et un trajet de conduction thermique, par l'intermédiaire duquel, pendant le fonctionnement du système optique, la chaleur provenant du réseau de miroirs (110, 210, 310) peut être conduite à l'opposé d'un refroidisseur (120, 420), le trajet de positionnement mécanique et le trajet de conduction thermique étant spatialement séparés.
PCT/EP2023/079438 2022-11-18 2023-10-23 Ensemble d'un système optique WO2024104727A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022212279.8A DE102022212279A1 (de) 2022-11-18 2022-11-18 Baugruppe eines optischen Systems
DE102022212279.8 2022-11-18

Publications (1)

Publication Number Publication Date
WO2024104727A1 true WO2024104727A1 (fr) 2024-05-23

Family

ID=88793092

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2023/079438 WO2024104727A1 (fr) 2022-11-18 2023-10-23 Ensemble d'un système optique

Country Status (2)

Country Link
DE (1) DE102022212279A1 (fr)
WO (1) WO2024104727A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022212279A1 (de) 2022-11-18 2024-05-23 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005026843A2 (fr) 2003-09-12 2005-03-24 Carl Zeiss Smt Ag Systeme d'eclairage pour une installation d'exposition de projection de microlithographie
DE102008009600A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie
DE102011006100A1 (de) * 2011-03-25 2012-09-27 Carl Zeiss Smt Gmbh Spiegel-Array
DE102012200733A1 (de) 2012-01-19 2013-01-24 Carl Zeiss Smt Gmbh Spiegelanordnung, insbesondere zum Einsatz in einem optischen System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
US20150103326A1 (en) * 2013-10-14 2015-04-16 Carl Zeiss Smt Gmbh Optical element
DE102014203144A1 (de) 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102016219334A1 (de) * 2016-10-06 2017-08-17 Carl Zeiss Smt Gmbh Anordnung und lithographieanlage
DE102022212279A1 (de) 2022-11-18 2024-05-23 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016223657A1 (de) 2016-11-29 2017-01-12 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005026843A2 (fr) 2003-09-12 2005-03-24 Carl Zeiss Smt Ag Systeme d'eclairage pour une installation d'exposition de projection de microlithographie
DE102008009600A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie
DE102011006100A1 (de) * 2011-03-25 2012-09-27 Carl Zeiss Smt Gmbh Spiegel-Array
DE102012200733A1 (de) 2012-01-19 2013-01-24 Carl Zeiss Smt Gmbh Spiegelanordnung, insbesondere zum Einsatz in einem optischen System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
US20150103326A1 (en) * 2013-10-14 2015-04-16 Carl Zeiss Smt Gmbh Optical element
US9658542B2 (en) 2013-10-14 2017-05-23 Carl Zeiss Smt Gmbh Optical element
DE102014203144A1 (de) 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102016219334A1 (de) * 2016-10-06 2017-08-17 Carl Zeiss Smt Gmbh Anordnung und lithographieanlage
DE102022212279A1 (de) 2022-11-18 2024-05-23 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems

Also Published As

Publication number Publication date
DE102022212279A1 (de) 2024-05-23

Similar Documents

Publication Publication Date Title
WO2024104727A1 (fr) Ensemble d'un système optique
DE102009054869B4 (de) Spiegel zur Führung eines Strahlungsbündels, Vorrichtungen mit einem derartigen Spiegel sowie Verfahren zur Herstellung mikro- oder nanostrukturierter Bauelemente
DE102011016769A1 (de) EUV-Spiegelmodul
DE102009009568A1 (de) Optische Baugruppe zur Führung eines EUV-Strahlungsbündels
DE102014203144A1 (de) Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
WO2024104719A1 (fr) Assemblage d'un système optique
DE102013217146A1 (de) Optisches Bauelement
DE102014202737A1 (de) Lagerelement und system zum lagern eines optischen elements
WO2019174996A1 (fr) Système de formation de faisceau et d'éclairage pour système lithographique, système lithographique et procédé
DE102018123328B4 (de) Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems
DE102015221921A1 (de) Facetteneinrichtung mit einem Formgedächtnislegierungs-Aktor, Verfahren zum Herstellen und Lithographieanlage
DE102018220565A1 (de) Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem semiaktiven Abstandshalter und Verfahren zur Verwendung des semiaktiven Abstandshalters
DE102017214441A1 (de) Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102020214130A1 (de) Verfahren zur Temperierung eines optischen Elementes und optische Baugruppe
DE102020203713A1 (de) Entkopplungsgelenk zur mechanischen Lagerung eines optischen Elements
DE102022210205A1 (de) Adaptiver Spiegel mit temperierten Aktuatoren
DE102022211559A1 (de) Kontaktierung einer elektrischen Komponente in einem optischen Element
DE102017200775A1 (de) Bauelement für eine Projektionsbelichtungsanlage
DE102019200358A1 (de) Projektionsbelichtungsanlage für die Halbleiterlithographie mit Mitteln zur Reduzierung des Wärmeübertrags
DE102015221929A1 (de) Anordnung für eine Lithographieanlage und Lithographieanlage
DE102019207559A1 (de) Baugruppe zur Kühlung eines optischen Elements, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017211864A1 (de) Baugruppe, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102022204014B3 (de) Temperaturinsensitiver Aktuator und Deformationsspiegel
DE102016219334A1 (de) Anordnung und lithographieanlage
DE102022213142A1 (de) Spiegelanordnung mit gekühlten Spiegelelementen und Lithographiesystem