WO2024051135A1 - 一种增强硅片清洗效果的方法 - Google Patents

一种增强硅片清洗效果的方法 Download PDF

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Publication number
WO2024051135A1
WO2024051135A1 PCT/CN2023/081614 CN2023081614W WO2024051135A1 WO 2024051135 A1 WO2024051135 A1 WO 2024051135A1 CN 2023081614 W CN2023081614 W CN 2023081614W WO 2024051135 A1 WO2024051135 A1 WO 2024051135A1
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feeding
silicon wafer
trough
feeding trough
water inlet
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PCT/CN2023/081614
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English (en)
French (fr)
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马爱
洪漪
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上海中欣晶圆半导体科技有限公司
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Publication of WO2024051135A1 publication Critical patent/WO2024051135A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Definitions

  • the invention relates to the technical field of silicon wafer processing, and in particular to a method for enhancing the cleaning effect of silicon wafers.
  • the usual cleaning process is the feeding chute, processing chute, unloading chute, and drying.
  • the loading tank is usually a pure water tank used to pre-clean silicon wafers.
  • the tank is generally equipped with bubbling and overflow functions. The cleaning effect is affected by the bubbling and pure water overflow flow, and the cleaning effect is limited.
  • the schematic diagram of the original feeding trough is shown in Figure 1.
  • the present invention is carried out to solve the above technical problems.
  • the particle problem is taken into account without damaging the edge oxide layer, and a method for enhancing the silicon wafer cleaning effect is provided.
  • Embodiments of the present invention provide a method for enhancing the cleaning effect of silicon wafers, which is characterized by including the following steps:
  • Step 1 Put the pre-cleaned silicon wafer into the first feeding trough.
  • the water level in the first feeding trough is immersed in the silicon wafer.
  • the water inlet direction of the first feeding trough is opposite to the moving direction of the silicon wafer;
  • Step 2 The silicon wafer enters the second feeding trough.
  • the water level in the second feeding trough is higher than the water level in the first feeding trough.
  • the pure water in the second feeding trough overflows to the first feeding trough, forming a secondary feeding trough. Overflow, the water inlet direction of the second loading chute is opposite to the moving direction of the silicon wafer;
  • step three the silicon wafers pass through the processing tank, the feeding tank, and finally are dried.
  • Countercurrent rinsing The traditional water inlet method is that a water inlet pipe is directly injected into the tank from above. Countercurrent rinsing is to extend the water inlet pipe to the bottom of the tank, and the water inlet direction is opposite to the moving direction of the silicon wafer, so that the injected pure water can achieve the effect of rinsing the surface of the silicon wafer.
  • the secondary overflow overflows the cleaner pure water from the second feeding tank to the first tank, which not only ensures the silicon wafer cleaning effect but also saves pure water.
  • the silicon wafer is placed into the first loading chute by a robot, and the silicon wafer is bubbled, overflowed or ultrasonic cleaned for 4-5 minutes.
  • the rear end of the first feeding chute and the rear end of the second feeding chute are provided with water inlet pipes, and the The water inlet pipe is L-shaped, one side of the water inlet pipe opens upward, and the other side of the water inlet pipe opens at the bottom.
  • the water inlet direction is opposite to the moving direction of the silicon wafer, achieving the effect of countercurrent rinsing.
  • the length of the water inlet pipe located in the first feeding chute is greater than the length of the water inlet pipe located in the second feeding chute.
  • first feeding trough and the second feeding trough are located in a trough body, and a partition is provided in the trough body to divide the trough body into a first feeding trough and a second feeding trough,
  • the volume of the first feeding trough is greater than the volume of the second feeding trough, and the height of the partition is smaller than the depth of the trough body.
  • the present invention optimizes the height of the partition so that the upper layer of pure water in the second feeding trough can be introduced into the first feeding trough, thus achieving a cost-saving effect.
  • a plurality of overflow holes are provided on the left side plate of the first feeding chute, and the overflow holes are located at the upper end of the side plate.
  • Figure 1 is a schematic structural diagram of the original cleaning method
  • Figure 2 is a cleaning flow chart of the present invention
  • Figure 3 is a schematic three-dimensional structural diagram of the first feeding chute and the second feeding chute
  • Figure 4 is a schematic structural diagram of the water inlet pipe of the present invention.
  • the present invention provides a method for enhancing the cleaning effect of silicon wafers, which includes the following steps:
  • Step 1 Put the pre-cleaned silicon wafer into the first feeding tank 1.
  • the water level in the first feeding tank immerses the silicon wafer.
  • the water inlet direction of the first feeding tank is opposite to the moving direction of the silicon wafer;
  • Step 2 The silicon wafer enters the second feeding chute 2.
  • the water level in the second feeding chute is higher than the water level in the first feeding chute.
  • the pure water in the second feeding chute overflows to the first feeding chute, forming two Stage overflow, the water inlet direction of the second loading chute is opposite to the moving direction of the silicon wafer;
  • step three the silicon wafers pass through the processing tank, the feeding tank, and finally are dried.
  • Countercurrent rinsing The traditional water inlet method is that a water inlet pipe is directly injected into the tank from above. Countercurrent rinsing is to extend the water inlet pipe to the bottom of the tank, and the water inlet direction is opposite to the moving direction of the silicon wafer, so that the injected pure water can achieve the effect of rinsing the surface of the silicon wafer.
  • the secondary overflow overflows the cleaner pure water from the second feeding tank to the first tank, which not only ensures the silicon wafer cleaning effect but also saves pure water.
  • step one the silicon wafer is placed into the first loading chute by a robot, and the silicon wafer is bubbled, overflowed or ultrasonic cleaned for 4-5 minutes.
  • the rear end of the first feeding trough and the rear end of the second feeding trough are provided with a water inlet pipe 3, the water inlet pipe is L-shaped, one side of the water inlet pipe opens upward, and the other side of the water inlet pipe opens. Located at the bottom.
  • the water inlet direction is opposite to the moving direction of the silicon wafer, achieving the effect of countercurrent rinsing.
  • first feeding trough and the second feeding trough are located in a trough body, and a partition is provided in the trough body to divide the trough body into a first feeding trough and a second feeding trough.
  • the volume is greater than the volume of the second feeding chute, and the height of the partition is less than the depth of the chute.
  • the present invention optimizes the height of the partition so that the upper layer of pure water in the second feeding trough can be introduced into the first feeding trough, thus achieving a cost-saving effect.
  • a plurality of overflow holes 4 are provided on the left side plate of the first feeding chute, and the overflow holes are located at the upper end of the side plate.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

一种增强硅片清洗效果的方法，其特征在于，包括如下步骤：步骤一，将预清洗的硅片放入第一上料槽（1），第一上料槽（1）的水位浸没硅片，第一上料槽（1）的进水方向与硅片的移动方向相反；步骤二，硅片进入第二上料槽（2），第二上料槽（2）的水位高于第一上料槽（1）的水位，第二上料槽（2）内的纯水溢流到第一上料槽（1），形成二级溢流，第二上料槽（2）的进水方向与硅片的移动方向相反；步骤三，硅片依次经过处理槽、下料槽，并最后进行甩干。通过将原先1个上料槽由1个大槽改设计为2个槽，硅片先进第一上料槽（1），再进第二上料槽（2），除保留原鼓泡和溢流的功能外，另外增加逆流漂洗和二级溢流功能。

Description

一种增强硅片清洗效果的方法 技术领域
本发明涉及硅片处理技术领域，具体涉及一种增强硅片清洗效果的方法。
背景技术
为提高硅片表面的洁净度，在硅片加工过程中会设计多道清洗，通常的清洗流程依次是上料槽、处理槽、下料槽、甩干。上料槽通常是一个纯水槽，用来预清洗硅片，该槽一般配有鼓泡和溢流功能，清洗效果受鼓泡和纯水溢流流量的影响，清洗效果有限。原上料槽示意图见图1。
发明内容
本发明是为解决上述技术问题而进行的，通过改良清洗方法，兼顾了颗粒问题又不会破坏边缘氧化层，提供了一种增强硅片清洗效果的方法。
为了实现上述目的，本发明所采用的技术方案如下：
本发明的实施例提供了一种增强硅片清洗效果的方法，其特征在于，包括如下步骤：
步骤一，将预清洗的硅片放入第一上料槽，第一上料槽的水位浸没硅片，第一上料槽的进水方向与硅片的移动方向相反；
步骤二，硅片进入第二上料槽，第二上料槽的水位高于第一上料槽的水位，第二上料槽内的纯水溢流到第一上料槽，形成二级溢流，第二上料槽的进水方向与硅片的移动方向相反；
步骤三，硅片依次经过处理槽、下料槽，并最后进行甩干。
本发明通过将原先1个上料槽由1个大槽改设计为2个槽，硅片先进第一上料槽，再进第二上料槽，除保留原鼓泡和溢流的功能外，另外增加逆流漂洗和二级溢流功能。逆流漂洗：传统的进水方式是一根进水管从槽上方直接注入到槽内。逆流漂洗是将进水管延长至槽底，且进水方向和硅片移动方向相反，使注入的纯水到达冲洗硅片表面的效果。二级溢流是将第二上料槽较洁净的纯水溢流至1槽，既保证了硅片清洗效果又节约了纯水。
进一步优选，所述步骤一中通过机械手将硅片放入第一上料槽内，并鼓泡溢流或超声波清洗4-5分钟。
进一步优选，所述第一上料槽的后端部和所述第二上料槽的后端部设有进水管，所述 进水管呈L形，所述进水管的一侧开口朝上，所述进水管的另一侧开口位于底部。
进水方向和硅片移动方向相反，达到逆流漂洗的作用。
进一步优选，所述进水管设有四根，且呈矩阵式排布在所述第一上料槽和所述第二上料槽中。
进一步优选，位于第一上料槽中的进水管长度大于位于第二上料槽中的进水管长度。
进一步优选，所述第一上料槽与所述第二上料槽位于一槽体中，且所述槽体内设有一隔板将槽体分为第一上料槽和第二上料槽，所述第一上料槽的体积大于所述第二上料槽的体积，所述隔板的高度小于所述槽体的深度。
本发明优化隔板的高度从而能够将第二上料槽中的上层纯水引入到第一上料槽中从而起到了节约成本的效果。
进一步优选，所述第一上料槽的左侧板上开设有多个溢流孔，且所述溢流孔位于侧板的上端部。
便于将第一上料槽中的纯水溢流出去。
附图说明
图1为原清洗方法结构示意图；
图2为本发明的清洗流程图；
图3为第一上料槽和第二上料槽的立体结构示意图；
图4为本发明的进水管的结构示意图。
附图标记：1、第一上料槽；2、第二上料槽；3、进水管；4、溢流孔
具体实施方式
下面结合本发明的附图和实施例对本发明的实施作详细说明，以下实施例是在以本发明技术方案为前提下进行实施，给出了详细的实施方式和具体操作过程，但本发明的保护范围不限于下述的实施例。
参见图2-图4，本发明提供了一种增强硅片清洗效果的方法，包括如下步骤：
步骤一，将预清洗的硅片放入第一上料槽1，第一上料槽的水位浸没硅片，第一上料槽的进水方向与硅片的移动方向相反；
步骤二，硅片进入第二上料槽2，第二上料槽的水位高于第一上料槽的水位，第二上料槽内的纯水溢流到第一上料槽，形成二级溢流，第二上料槽的进水方向与硅片的移动方向相反；
步骤三，硅片依次经过处理槽、下料槽，并最后进行甩干。
本发明通过将原先1个上料槽由1个大槽改设计为2个槽，硅片先进第一上料槽，再进第二上料槽，除保留原鼓泡和溢流的功能外，另外增加逆流漂洗和二级溢流功能。逆流漂洗：传统的进水方式是一根进水管从槽上方直接注入到槽内。逆流漂洗是将进水管延长至槽底，且进水方向和硅片移动方向相反，使注入的纯水到达冲洗硅片表面的效果。二级溢流是将第二上料槽较洁净的纯水溢流至1槽，既保证了硅片清洗效果又节约了纯水。
进一步优选，步骤一中通过机械手将硅片放入第一上料槽内，并鼓泡溢流或超声波清洗4-5分钟。
进一步优选，第一上料槽的后端部和第二上料槽的后端部设有进水管3，进水管呈L形，进水管的一侧开口朝上，进水管的另一侧开口位于底部。
进水方向和硅片移动方向相反，达到逆流漂洗的作用。
进一步优选，进水管设有四根，且呈矩阵式排布在第一上料槽和第二上料槽中。
进一步优选，第一上料槽与第二上料槽位于一槽体中，且槽体内设有一隔板将槽体分为第一上料槽和第二上料槽，第一上料槽的体积大于第二上料槽的体积，隔板的高度小于槽体的深度。
本发明优化隔板的高度从而能够将第二上料槽中的上层纯水引入到第一上料槽中从而起到了节约成本的效果。
进一步优选，第一上料槽的左侧板上开设有多个溢流孔4，且溢流孔位于侧板的上端部。
便于将第一上料槽中的纯水溢流出去。
以上已对本发明创造的较佳实施例进行了具体说明，但本发明创造并不限于所述实施例，熟悉本领域的技术人员在不违背本发明创造精神的前提下还可作出种种的等同的变型或替换，这些等同的变型或替换均包含在本申请权利要求所限定的范围内。

Claims (7)

  1. 一种增强硅片清洗效果的方法，其特征在于，包括如下步骤：
    步骤一，将预清洗的硅片放入第一上料槽，第一上料槽的水位浸没硅片，第一上料槽的进水方向与硅片的移动方向相反；
    步骤二，硅片进入第二上料槽，第二上料槽的水位高于第一上料槽的水位，第二上料槽内的纯水溢流到第一上料槽，形成二级溢流，第二上料槽的进水方向与硅片的移动方向相反；
    步骤三，硅片依次经过处理槽、下料槽，并最后进行甩干。
  2. 根据权利要求1所述的一种增强硅片清洗效果的方法，其特征在于：所述步骤一中通过机械手将硅片放入第一上料槽内，并鼓泡溢流或超声波清洗4-5分钟。
  3. 根据权利要求1所述的一种增强硅片清洗效果的方法，其特征在于：所述第一上料槽的后端部和所述第二上料槽的后端部设有进水管，所述进水管呈L形，所述进水管的一侧开口朝上，所述进水管的另一侧开口位于底部。
  4. 根据权利要求3所述的一种增强硅片清洗效果的方法，其特征在于：所述进水管设有四根，且呈矩阵式排布在所述第一上料槽和所述第二上料槽中。
  5. 根据权利要求4所述的一种增强硅片清洗效果的方法，其特征在于：位于第一上料槽中的进水管长度大于位于第二上料槽中的进水管长度。
  6. 根据权利要求1所述的一种增强硅片清洗效果的方法，其特征在于：所述第一上料槽与所述第二上料槽位于一槽体中，且所述槽体内设有一隔板将槽体分为第一上料槽和第二上料槽，所述第一上料槽的体积大于所述第二上料槽的体积，所述隔板的高度小于所述槽体的深度。
  7. 根据权利要求6所述的一种增强硅片清洗效果的方法，其特征在于：所述第一上料槽的左侧板上开设有多个溢流孔，且所述溢流孔位于侧板的上端部。
PCT/CN2023/081614 2022-09-05 2023-03-15 一种增强硅片清洗效果的方法 WO2024051135A1 (zh)

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