WO2023226784A1 - 一种射频放大电路、射频收发机及通信设备 - Google Patents

一种射频放大电路、射频收发机及通信设备 Download PDF

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Publication number
WO2023226784A1
WO2023226784A1 PCT/CN2023/093669 CN2023093669W WO2023226784A1 WO 2023226784 A1 WO2023226784 A1 WO 2023226784A1 CN 2023093669 W CN2023093669 W CN 2023093669W WO 2023226784 A1 WO2023226784 A1 WO 2023226784A1
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Prior art keywords
radio frequency
coil
amplifier
circuit
coupled
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PCT/CN2023/093669
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English (en)
French (fr)
Inventor
赵夫源
邓伟
张明名
丘启霖
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华为技术有限公司
清华大学
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Publication of WO2023226784A1 publication Critical patent/WO2023226784A1/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Definitions

  • the embodiments of the present application relate to the field of communication technology, and in particular, to a radio frequency amplifier circuit, a radio frequency transceiver and a communication device.
  • the radio frequency transceiver includes a transmitting path and a receiving path, where the transmitting path is used to transmit radio frequency signals, and the receiving path is used to receive radio frequency signals.
  • Embodiments of the present application provide a radio frequency amplification circuit, a radio frequency transceiver and communication equipment, which solve the problem that the frequency bands supported by existing radio frequency transceivers are fixed values and cannot support the operation of multi-band systems.
  • a first aspect of the embodiment of the present application provides a radio frequency amplification circuit.
  • the radio frequency amplification circuit can be applied in a transmitting path or a receiving path.
  • the radio frequency amplifying circuit includes: a radio frequency input terminal and a radio frequency output terminal, and is disposed at the radio frequency input terminal. and at least two transmission paths between the radio frequency output end.
  • the at least two transmission paths include a first transmission path and a second transmission path.
  • the first transmission path includes a first amplifier, a first coil, a second coil and a third coil coupled in sequence.
  • the second amplifier, the second transmission path includes a third amplifier, a third coil, a fourth coil and a fourth amplifier coupled in sequence. Wherein, any two coils among the first coil, the second coil, the third coil and the fourth coil are magnetically coupled; the on or off of the first amplifier and the second amplifier is adjustable, or the third amplifier and the fourth The amplifier can be switched on or off.
  • the radio frequency amplification circuit provided by the embodiment of the present application has multiple transmission paths between the radio frequency input end and the radio frequency output end.
  • the multiple transmission paths include multiple magnetically coupled coils.
  • the equivalent inductance matches the equivalent capacitance value, which can ensure that the quality factor remains unchanged, and therefore can ensure that the bandwidth width is relatively stable.
  • the radio frequency amplification circuit when any one of the first transmission path and the second transmission path is turned on, the radio frequency amplification circuit is used to amplify the first radio frequency signal.
  • the radio frequency amplifier circuit is used to amplify the second radio frequency signal.
  • the frequency of the first radio frequency signal is higher than the frequency of the second radio frequency signal.
  • the radio frequency amplifier circuit provided by the embodiment of the present application can change the equivalent inductance and equivalent capacitance in the radio frequency amplifier circuit by turning on or off the transmission path, so that the resonant frequency of the radio frequency amplifier circuit can be changed, so that the RF amplifier circuits can support more types of multi-band systems.
  • the inductance value of the first coil is equal to the inductance value of the third coil
  • the inductance value of the second coil is equal to the inductance value of the fourth coil
  • the mutual inductance between the first coil and the second coil is equal to the mutual inductance between the third coil and the fourth coil.
  • the mutual inductance of the first coil and the third coil is equal to the mutual inductance of the second coil and the fourth coil.
  • the mutual inductance between the first coil and the fourth coil is equal to the mutual inductance between the second coil and the third coil.
  • the first amplifier and the third amplifier are amplifiers with the same amplification factor
  • the second amplifier and the fourth amplifier are amplifiers with the same amplification factor
  • the radio frequency amplifier circuit provided by the embodiment of the present application, by symmetrically arranging the above-mentioned first coil L1 to fourth coil L4, combines the inductance values of the first coil L1 to fourth coil L4, the mutual inductance between the coils, and the amplification factor of the amplifier. Set to the same value, so that the amplified radio frequency signals of the first transmission path and the second transmission path have the same amplitude, so that the signals output by the first transmission path and the second transmission path can be better integrated.
  • the at least two transmission paths further include: a third transmission path, the third transmission path includes a fifth amplifier, a fifth coil, a sixth coil and a sixth amplifier, and the first Any two coils among the coil, the second coil, the third coil, the fourth coil, the fifth coil and the sixth coil are magnetically coupled.
  • the radio frequency amplifier circuit provided by the embodiment of the present application can adjust the equivalent inductance and equivalent capacitance of the radio frequency amplifier circuit by adjusting the on or off of the at least two transmission paths, so as to adjust the resonant frequency of the radio frequency amplifier circuit.
  • the resonant frequency of the radio frequency amplifier circuit can be adjusted to multiple values, so that the radio frequency amplifier circuit can support multiple types of multi-band systems.
  • the first coil, the second coil, the third coil, the fourth coil, the fifth coil and the sixth coil are symmetrically arranged in at least one wiring layer.
  • the radio frequency amplifier circuit provided by the embodiment of the present application symmetrically arranges the first coil to the sixth coil in at least one wiring layer, so that any two coils of the first coil to the sixth coil are magnetically coupled, and by controlling the first coil
  • the turning on or off of the third transmission path to which the transmission path is connected can adjust the inductance of any coil in the radio frequency amplifier circuit and change the resonant frequency of the radio frequency amplifier circuit, so that the radio frequency amplifier circuit can support multiple types of multi-band devices. system.
  • the radio frequency amplification circuit further includes an input matching network and an output matching network.
  • the input matching network is coupled between the radio frequency input end and at least two transmission paths, and the output matching network is coupled between at least Between the two transmission channels and the RF output end.
  • the radio frequency amplification circuit provided by the embodiment of the present application can, by setting the input matching network and the output matching network, It can maximize the output power of the above-mentioned radio frequency amplifier circuit.
  • a second aspect of the embodiment of the present application provides a radio frequency transceiver, which includes: a transmitter and/or a receiver.
  • the transmitter and/or receiver includes a radio frequency amplification circuit and a filter coupled in sequence, and the radio frequency amplification circuit is a radio frequency amplification circuit as in the above-mentioned first aspect or any possible implementation of the first aspect.
  • the above-mentioned radio frequency transceiver includes a transmitter, the radio frequency amplification circuit included in the transmitter is a first radio frequency amplification circuit, and the filter is a first filter. The output is coupled to the input of the first filter.
  • the above-mentioned transmitter further includes a first baseband processing circuit and an up-conversion circuit.
  • the output end of the up-conversion circuit is coupled to the input end of the first radio frequency amplification circuit.
  • the input terminal is coupled to the output terminal of the first baseband processing circuit.
  • a radio frequency transceiver includes a receiver, the radio frequency amplification circuit included in the receiver is a second radio frequency amplification circuit, the filter is a second filter, and the output of the second filter The terminal is coupled to the input terminal of the second radio frequency amplifier circuit.
  • the above-mentioned receiver further includes a down-conversion circuit and a second baseband processing circuit.
  • the input end of the down-conversion circuit is coupled to the output end of the second radio frequency amplifier circuit.
  • the down-conversion circuit is The output is coupled to the input of the second baseband processing circuit.
  • a third aspect of the embodiment of the present application provides a communication device.
  • the communication device includes an antenna and a radio frequency transceiver coupled to the antenna.
  • the antenna is used to transmit or receive radio frequency signals.
  • the radio frequency transceiver is as described in the above second aspect or the third aspect.
  • Figure 1 is a schematic structural diagram of a radio frequency transceiver provided by an embodiment of the present application
  • Figure 2 is a schematic structural diagram of a radio frequency amplifier circuit provided by an embodiment of the present application.
  • Figure 3 is a schematic structural diagram of a multi-band matching network provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of another radio frequency amplifier circuit provided by an embodiment of the present application.
  • Figure 5 is a schematic structural diagram of a tunable frequency selection network provided by an embodiment of the present application.
  • Figure 6 is a schematic structural diagram of an ideal parallel RLC resonant network provided by an embodiment of the present application.
  • Figure 7 is a schematic structural diagram of a resonant cavity parallel circuit provided by an embodiment of the present application.
  • Figure 8 is a schematic structural diagram of a parallel resonant circuit provided by an embodiment of the present application.
  • Figure 9 is a schematic structural diagram of a transformer matching network provided by an embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of another transformer matching network provided by an embodiment of the present application.
  • FIG 11 is a schematic structural diagram of another transformer matching network provided by an embodiment of the present application.
  • Figure 12 is a schematic structural diagram of another radio frequency amplifier circuit provided by an embodiment of the present application.
  • Figure 13 is a schematic structural diagram of yet another radio frequency amplifier circuit provided by an embodiment of the present application.
  • Figure 14 is a schematic structural diagram of yet another radio frequency amplifier circuit provided by an embodiment of the present application.
  • FIG. 15 is a schematic structural diagram of yet another radio frequency amplifier circuit provided by an embodiment of the present application.
  • Figure 16 is a schematic structural diagram of a radio frequency transceiver provided by an embodiment of the present application.
  • Figure 17 is a schematic structural diagram of a communication device provided by an embodiment of the present application.
  • circuits or other components may be described or referred to as “for” performing one or more tasks.
  • “for” is used to imply structure by indicating that the circuit/component includes structure (eg, circuitry) that performs one or more tasks during operation. Thus, a designated circuit/component may be said to perform the task even when the circuit/component is currently inoperable (e.g., not turned on).
  • Circuits/components used with the wording "for” include hardware, such as circuitry that performs operations, etc.
  • At least one of a, b or c can mean: a, b, c, a and b, a and c, b and c or a, b and c, where a, b and c can It can be single or multiple.
  • words such as “first” and “second” do not limit the number and order.
  • the RF transceiver is the front-end part of the communication system and generally includes a transmitting path and a receiving path.
  • the transmitting path is used to transmit RF signals
  • the receiving path is used to receive RF signals.
  • FIG. 1 shows a radio frequency transceiver.
  • the radio frequency transceiver realizes the transmission or reception of radio frequency signals in different frequency bands by separately setting multiple transmit channels and multiple receive channels to support multi-band systems.
  • the radio frequency transceiver includes an upmixing circuit, a downmixing circuit, a transmitting path 1 to a transmitting path P, and a receiving path 1 to a receiving path Q and other components.
  • each transmitting channel or receiving channel is coupled to the antenna, P and Q are both integers greater than 1, each transmitting channel or receiving channel is used to transmit a fixed frequency band radio frequency signal, and each transmitting channel or receiving channel is provided with Amplifiers, filters and other devices corresponding to this frequency band.
  • the input terminal of the above-mentioned amplifier can be equivalent to the radio frequency input terminal described in the following embodiments, and the output terminal of the amplifier can be equivalent to the radio frequency output terminal described in the following embodiments.
  • the radio frequency input terminal is used to input radio frequency signals.
  • the amplifier is used To amplify RF signals, RF output The terminal is used to output the amplified RF signal.
  • the transmitting path 1 is used to transmit radio frequency signals with the frequency band f1.
  • the transmitting path 1 can include an amplifier a1 and a bandpass filter f1.
  • the transmitting path P is used to transmit the radio frequency signals with the frequency band fP.
  • the transmitting path P can include Including amplifier aP and band-pass filter fP.
  • the receiving path 1 is used to transmit radio frequency signals in the frequency band F1.
  • the receiving path 1 may include an amplifier A1 and a bandpass filter F1.
  • the receiving path Q is used to transmit radio frequency signals in the frequency band FQ.
  • the receiving path Q may include an amplifier. AQ and bandpass filter FQ.
  • the above-mentioned upmixing circuit is used to generate a radio frequency signal based on the baseband signal.
  • the corresponding amplifiers in the above-mentioned transmission path 1 to transmission path P are used to power amplify the radio frequency signal.
  • the amplified radio frequency signal can be sent through the antenna.
  • the above-mentioned antenna can also be used to receive radio frequency signals.
  • the corresponding amplifiers in the above-mentioned receiving paths 1 to receiving paths Q are used to power amplify the radio frequency signals, and the down-mixing circuit is used to generate baseband based on the power-amplified radio frequency signals. Signal.
  • the operating frequency bands included in the changed multi-band system will also change. Since each of the above-mentioned transmission channels Or the frequency band corresponding to the receiving channel is a fixed value, and the above-mentioned radio frequency transceiver will no longer be able to support the multi-band system after this type of change. Moreover, in the above-mentioned radio frequency transceiver, when the multi-band system includes multiple frequency bands, multiple transmitting channels or multiple receiving channels need to be independently set up. Each transmitting channel or receiving channel corresponds to a frequency band, and the transmission and transmission channels are set in each channel. The amplifiers, filters and other devices corresponding to the frequency band will cause the radio frequency transceiver to be large in size and high in cost.
  • Figure 2 shows a radio frequency amplifier circuit.
  • the input terminal of the radio frequency amplifier circuit is the radio frequency input terminal, and the output terminal of the radio frequency amplifier circuit is the radio frequency output terminal.
  • the radio frequency amplifier circuit can be used to replace the amplifier in the above-mentioned transmitting path. , or can be used to replace the amplifier in the above-mentioned receiving path.
  • the radio frequency amplification circuit realizes the transmission or reception of radio frequency signals in different frequency bands by setting up a multi-band matching network.
  • the radio frequency amplification circuit includes an input multi-band matching network, amplifier 1, an inter-stage multi-band matching network, amplifier 2 and an output multi-band matching network coupled in sequence.
  • the input multi-band matching network is used to receive RF signals in multiple frequency bands (for example, RF signals in frequency bands such as f1, f2 and f3)
  • the output multi-band matching network is used to output RF signals in multiple frequency bands
  • the input multi-band matching network The network and output multi-band matching network are used to maximize the output power of the RF amplifier circuit.
  • the inter-stage multi-band matching network is used to maximize the output gain of the RF amplifier circuit.
  • Amplifier 1 and amplifier 2 are used to amplify the power of the RF signal. .
  • the radio frequency amplifier circuit shown in Figure 2 can enable one channel to support the transmission of radio frequency signals in multiple frequency bands by setting up a multi-band matching network.
  • the radio frequency transceiver using the radio frequency amplifier circuit shown in Figure 2 does not need to separately set up multiple transmit channels or multiple receive channels, which can reduce the number of amplifiers, thereby reducing the number of radio frequency Transceiver size and cost reduction.
  • the multi-band matching network in the above-mentioned radio frequency amplifier circuit usually includes a matching network corresponding to each frequency band.
  • the multi-band matching network includes: a matching network f1 corresponding to the f1 frequency band, a matching network f2 corresponding to the f2 frequency band, a matching network f3 corresponding to the f3 frequency band, and other matching networks, where the matching network includes a capacitor. , resistors, inductors and transformers and other devices.
  • the inter-stage multi-band matching network in the above-mentioned radio frequency amplifier circuit can be reset to a tunable frequency selection network, and the input multi-band matching network and output multi-band matching network can be reset to a broadband matching network.
  • FIG. 4 shows a radio frequency amplifier circuit provided by an embodiment of the present application.
  • the input terminal of the radio frequency amplifier circuit is a radio frequency input terminal
  • the output terminal of the radio frequency amplifier circuit is a radio frequency output terminal.
  • the radio frequency amplifier circuit includes sequentially coupled Input wideband matching network, amplifier 3, tunable frequency selection network, amplifier 4 and output wideband matching network.
  • the resonant frequency of the above-mentioned tunable frequency selection network is adjustable, so that the frequency band supported by the radio frequency amplifier circuit can be adjusted, and the frequency band supported by the radio frequency transceiver can be adjusted.
  • a tunable frequency selection network is used to adjust the resonant frequency through a tunable capacitor with an adjustable capacitance value.
  • the tunable capacitor includes a switched capacitor 1 to a switched capacitor. 6.
  • Each switched capacitor contains a corresponding switch and a capacitor. By adjusting the on or off of the switch, the corresponding switched capacitor is turned on or off, thereby adjusting the capacitance of the above-mentioned tunable capacitor to adjust the tunable capacitor.
  • the capacitance of the equivalent capacitance of the frequency selection network realizes the adjustment of the frequency band supported by the radio frequency amplifier circuit.
  • the above-mentioned tunable capacitor may be a multi-bit (bit) tunable capacitor (or may be called a digital programmable capacitor).
  • the multi-bit tunable capacitor may include 8 switched capacitors.
  • the 8 switched capacitors may be encoded by a 3-bit binary number.
  • Each switched capacitor includes a corresponding switch and capacitor. By adjusting the conduction of the switch, Or turn off, the corresponding switch capacitor is turned on or off, thereby adjusting the capacitance of the multi-bit tunable capacitor.
  • the radio frequency amplifier circuit shown in Figure 4 can realize the adjustable frequency band supported by the radio frequency amplifier circuit by setting the input broadband matching network, the tunable frequency selection network and the output broadband matching network. Moreover, it is similar to the radio frequency transceiver shown in Figure 1 In comparison, there is no need to separately set up multiple transmit channels and multiple receive channels, so the size of the radio frequency amplifier circuit can be reduced and the cost can be reduced.
  • the ideal parallel RLC resonant network includes a resistor R, a capacitor C and a resistor set in parallel. Inductance L.
  • the calculation formula of the resonant frequency is:
  • f represents the resonant frequency
  • L is the inductance value of the inductor L
  • C is the capacitance value of the inductor C.
  • ⁇ represents the angular frequency.
  • the capacitance value of the capacitor C becomes larger, or the inductance value of the inductor L becomes larger, the value of the angular frequency ⁇ becomes smaller.
  • the capacitance value of the capacitor C becomes smaller, or the inductance value of the inductor L becomes smaller, the value of the angular frequency ⁇ becomes larger.
  • the quality factor (or quality factor, or quality factor) Q is used to represent the ratio of the energy stored in an energy storage device (such as inductor L, capacitor C, etc.) to the energy lost per cycle.
  • Quality indicator the larger the Q value of the device, the better the selectivity of the circuit or network composed of the component.
  • the calculation formula of quality factor Q can be expressed as:
  • the above R is the resistance value of the resistor R. According to the above formula, it can be seen that when the resistance value of resistor R remains unchanged, when the capacitance value of capacitor C is larger, or when the inductance value of inductor L is smaller, the value of quality factor Q is larger. When the resistance value of resistor R remains unchanged, when the capacitance value of capacitor C is smaller, or when the inductance value of inductor L is larger, the value of quality factor Q is smaller.
  • the resonant frequency is the center frequency of the bandwidth.
  • the bandwidth of the resonant network is f2-f1
  • the resonant frequency of the resonant network is f0.
  • the width of the above bandwidth is related to the value of the quality factor Q.
  • BW represents bandwidth.
  • BW bandwidth
  • the resonant frequency of the tunable frequency selection network is changed by adjusting the capacitance of the switching capacitor. Specifically, by increasing the capacitance value of the switching capacitor, the resonant frequency is adjusted smaller; by adjusting the capacitance value of the switching capacitor smaller, the resonant frequency is increased.
  • the capacitance C becomes larger and the value of angular frequency ⁇ becomes smaller, the value of quality factor Q will become larger and the bandwidth BW will become smaller.
  • the capacitance C becomes smaller and the value of the angular frequency ⁇ becomes larger, the value of the quality factor Q will become smaller and the bandwidth BW will become larger. It can be understood that in the process of adjusting the resonant frequency, the capacitance value of the capacitor is changed without changing the inductance value of the inductor. Due to the change of the quality factor Q, the bandwidth of the radio frequency amplifier circuit using the tunable frequency selection network will fluctuate.
  • the inductance value of the inductor can be adjusted while adjusting the capacitance value of the capacitor to stabilize the quality factor Q, thereby ensuring that the bandwidth BW is relatively stable.
  • Figure 7 shows a parallel circuit of resonant cavities.
  • the capacitance of the capacitor is changed through parallel connection.
  • the parallel circuit of resonant cavities includes a first resonant cavity and a second resonant cavity.
  • the first resonant cavity includes a resistor R1, a capacitor C1 and an inductor L1 coupled in parallel
  • the second resonant cavity includes a resistor R2, a capacitor C2 and an inductor L2 coupled in parallel.
  • the resistance values of resistor R1 and resistor R2 are both R
  • the capacitance values of capacitor C1 and capacitor C2 are both C
  • the inductance values of inductor L1 and inductor L2 are both L
  • the resonant frequencies of the two resonant cavities are both f0.
  • C eq represents the value of the equivalent capacitance
  • L eq represents the value of the equivalent inductance
  • first resonant cavity and the second resonant cavity are coupled in parallel to form a resonant cavity parallel circuit.
  • the resonant frequency f1 of the resonant cavity parallel circuit and the resonant frequency f0 of the first resonant cavity or the second resonant cavity are: the same resonant frequency.
  • the value of the equivalent inductance in the resonant parallel circuit changes, thereby adjusting the resonant frequency of the resonant parallel circuit.
  • the coupled magnetic fluxes of the two inductors are positive, compared with no magnetic coupling between the two inductors, the value of the equivalent inductance of the inductors will become larger, and the resonant frequency of the parallel resonant circuit will become smaller; when When the magnetic flux of the coupling of two inductors is negative, the value of the equivalent inductance of the inductors will become smaller and the resonant frequency of the parallel resonant circuit will become larger than if there is no magnetic coupling between the two inductors.
  • Figure 8 shows a parallel resonant circuit.
  • the resonant parallel circuit includes a first resonant cavity and a second resonant cavity.
  • the first resonant cavity includes a resistor R1, a capacitor C1 and an inductor L1 coupled in parallel
  • the second resonant cavity includes a resistor R2, a capacitor C2 and an inductor L2 coupled in parallel.
  • the resistance values of resistor R1 and resistor R2 are both R
  • the capacitance values of capacitor C1 and capacitor C2 are both C
  • the inductance values of inductor L1 and inductor L2 are both L
  • inductors L1 and L2 are magnetically coupled
  • the coupling coefficient is k.
  • C eq represents the value of the equivalent capacitance
  • L eq represents the value of the equivalent inductance
  • M represents the mutual inductance between the inductor L1 and the inductor L2.
  • the mutual inductance between the inductor L1 and the inductor L2 can be adjusted as:
  • M represents the mutual inductance between the inductor L1 and the inductor L2
  • L represents the inductance value of the inductor L1 or the inductor L2
  • ⁇ represents that the resonant frequency f1 is ⁇ times the resonant frequency f0.
  • the adjusted equivalent capacitance value C eq can be expressed by the following formula:
  • the resonant frequency f1 of the parallel resonant circuit can be expressed by the following formula:
  • the quality factor Q1 of the parallel resonant circuit can be expressed by the following formula:
  • bandwidth BW1 of the parallel resonant circuit can be expressed by the following formula:
  • the resonant frequency of the tunable frequency selection network is adjusted by changing the capacitance value of the capacitor.
  • the quality factor of the tunable frequency selection network will be changed. value, resulting in large bandwidth fluctuations at different resonant frequencies.
  • the parallel circuit of resonant cavities shown in Figure 8 can connect the resonant cavities in parallel by adjusting the capacitance value of the capacitor according to the inductance value of the inductor.
  • the resonant frequency of the circuit is adjusted from f0 to f1 without changing the value of the quality factor of the resonant cavity parallel circuit, thereby ensuring that the bandwidth of the resonant cavity parallel circuit is relatively stable.
  • transformer matching network consisting of coupled resonators provided below.
  • Figure 9 shows a transformer matching network composed of a coupled resonant cavity.
  • the transformer matching network includes a first path and a second path.
  • the first path includes an amplifier A1, a first resonant cavity, a second resonant cavity and an amplifier A2.
  • the first resonant cavity includes a parallel coupled resistor R1, a capacitor C1 and an inductor L1.
  • the second resonant cavity includes a parallel coupled inductor L2, Capacitor C2 and resistor R2.
  • One end of the resistor R1 is coupled to one end of the amplifier A1, the other end of the resistor R1 is coupled to the ground end, one end of the resistor R2 is coupled to one end of the amplifier A2, and the other end of the resistor R2 is coupled to the ground end.
  • the second path includes amplifier A3, a third resonant cavity, a fourth resonant cavity, and amplifier A4.
  • the third resonant cavity includes a parallel-coupled resistor R3, a capacitor C3, and an inductor L3.
  • the fourth resonant cavity includes a parallel-coupled inductor L4 and a capacitor. C4 and resistor R4.
  • One end of the resistor R3 is coupled to one end of the amplifier A3, the other end of the resistor R3 is coupled to the ground terminal, one end of the resistor R4 is coupled to one end of the amplifier A4, and the other end of the resistor R4 is coupled to the ground terminal.
  • the other ends of the amplifier A1 and the amplifier A3 are coupled and can be used as the radio frequency input end, and the other ends of the amplifier A2 and the amplifier A4 are coupled and can be used as the radio frequency output end.
  • the inductance values of inductor L1 and inductor L3 are equal, and the inductance values of L2 and inductor L4 are equal. Any two of the inductors L1 to L4 are magnetically coupled.
  • the coupling coefficient between inductor L1 and inductor L2 is K 12
  • the coupling coefficient between inductor L1 and inductor L3 is K 13
  • the coupling coefficient between inductor L1 and inductor L4 is K 14
  • the coupling coefficient between inductor L1 and inductor L3 is K 14
  • the coupling coefficient is K 13
  • the coupling coefficient between the inductor L2 and the inductor L3 is K 23
  • the coupling coefficient between the inductor L2 and the inductor L4 is K 24 .
  • Amplifier A1 and amplifier A3 have the same amplification factor, and amplifier A2 and amplifier A4 have the same amplification factor.
  • the path of the radio frequency signal through the amplifier A1 to the amplifier A2 is the first path, and the path of the radio frequency signal through the amplifier A3 to the amplifier A4 is the second path.
  • the equivalent circuit corresponding to the transformer matching network shown in Figure 9 can be shown in Figure 10.
  • the equivalent circuit The IV (current-voltage) characteristic matrix can be expressed by the following formula:
  • the voltages V 1 to V 4 respectively represent the voltages across the inductors L1 to L4, s (or written as j ⁇ ) represents the phase relationship at the current frequency, L 1 to L 4 respectively represent the inductance values of the inductors L1 to L4, Current I 1 to current I 4 respectively represent the current value in inductor L1 to inductor L4, M 12 , M 13 to M 34 respectively represent the value of mutual inductance between any two inductors in inductor L1 to inductor L4, the value of the mutual inductance It can be calculated by the following formula,
  • M ij represents the value of the mutual inductance between the inductor Li and the inductor Lj
  • K ij represents the coupling coefficient between the inductor Li and the inductor Lj
  • Li represents the inductance value of the inductor Li
  • L j represents the inductance value of the inductor Lj.
  • V 1 V 3
  • V 2 V 4
  • V 1 represents the voltage across the inductor L1
  • V 2 represents the voltage across the inductor L2
  • s (or written as j ⁇ ) represents the phase relationship at the current frequency
  • the current I 1 to the current I 4 represent the inductor L1 to the inductor L4 respectively.
  • current value Indicates the inductance value of the equivalent mutual inductance of the above transformer matching network.
  • the equivalent mutual inductance M eq in the above transformer matching network can be expressed by the following formula:
  • the resonant frequency of the transformer matching network is lower. It can be understood that when the above radio frequency amplifier circuit uses the frequency converter matching network as a tunable frequency selection network, the resonant frequency can be adjusted, and It can support lower frequency bands while ensuring the relative stability of the bandwidth.
  • the transformer matching network shown in Figure 9 corresponds to The equivalent circuit can be shown in Figure 11.
  • the transformer matching network includes inductors L1 to L3, and parasitic capacitance C par .
  • the relationship in the equivalent circuit can be expressed by the following formula:
  • the voltage V 1 and the voltage V 2 represent the voltages across the inductor L1 and the inductor L2
  • L 1 and L 2 represent the inductance values of the inductor L1 and the inductor L2
  • M 12 and M 13 , etc. represent the mutual inductance between the inductors
  • C represents the parasitic The capacitance value of the capacitor C par .
  • the equivalent inductance value of the inductor L1 can be expressed by the following formula:
  • the resonant frequency point of the transformer matching network is higher and can support higher frequency.
  • frequency band when the above-mentioned first path and the second path are both in a conductive state, the resonant frequency point of the transformer matching network is lower and can support the lower frequency band.
  • the transformer matching network shown in Figure 9 adjusts the equivalent inductance of the inductor L1 by adjusting the on and off of the amplifier, thereby adjusting the resonant frequency of the transformer matching network and ensuring the relative stability of the bandwidth.
  • the transformer matching network shown in Figure 9 compared with the RF transmitter shown in Figure 1 above, there is no need to independently set up multiple transmit channels or multiple receive channels, and there is no need to set up a large number of amplifiers and filters, so the size of the RF transmitter can be reduced and the cost can be reduced.
  • an embodiment of the present application provides a radio frequency amplification circuit.
  • the principle of the transformer matching network shown in Figures 9 to 11 above is also applicable to this radio frequency amplification circuit.
  • the radio frequency amplifier circuit can be applied in a transmitting path or a receiving path.
  • the radio frequency amplifying circuit includes a radio frequency input terminal and a radio frequency output terminal, and at least two transmission paths disposed between the radio frequency input terminal and the radio frequency output terminal.
  • the at least two The transmission path includes a first transmission path and a second transmission path.
  • the first transmission path includes a first amplifier A1, a first coil L1, a second coil L2 and a second amplifier A2 coupled in sequence.
  • the second transmission path includes a first amplifier A1 coupled in sequence.
  • the radio frequency input terminal is used to receive radio frequency signals
  • at least two transmission channels are used to power amplify the received radio frequency signals
  • the radio frequency output terminal is used to output the amplified radio frequency signal.
  • any one of the first amplifier A1 to the fourth amplifier A4 in the first transmission path and the second transmission path can be used to power amplify the received radio frequency signal.
  • the magnetic flux coupled by any two coils among the first coil L1, the second coil L2, the third coil L3 and the fourth coil L4 may be positive or negative.
  • the embodiment of the present application does not limit whether the magnetic flux coupled by any two coils is positive or negative.
  • the above-mentioned first amplifier A1 to fourth amplifier A4 can be implemented by a transistor.
  • the transistor can be an insulated gate field effect transistor (IGFET).
  • IGFET insulated gate field effect transistor
  • the specific type of transistor in this embodiment is Not limited.
  • any of the above-mentioned first amplifier A1 to fourth amplifier A4 may adopt a common source structure amplifier or a common gate structure amplifier.
  • the specific structure of the four amplifiers is not limited.
  • the above-mentioned radio frequency amplification circuit can adjust the turn-on or turn-off of the above-mentioned first amplifier A1 and second amplifier A2, so that the first transmission The path is turned on or off, or the second transmission path can be turned on or off by adjusting the turn-on or turn-off of the third amplifier A3 and the fourth amplifier A4, thereby adjusting the above-mentioned first transmission path in the radio frequency amplification circuit.
  • the above-mentioned radio frequency amplification circuit can be used to amplify the first radio frequency signal.
  • the radio frequency amplifier circuit can be used to amplify the second radio frequency signal.
  • the frequency of the first radio frequency signal is higher than the frequency of the second radio frequency signal.
  • the frequency band corresponding to the first radio frequency signal may be 37GHz-43.5GHz
  • the frequency band corresponding to the second radio frequency signal may be 24.25GHz-29.5GHz.
  • the frequency bands of the second radio frequency signal supported by the radio frequency amplifier circuit provided in the embodiment of the present application may include n257, n258, n259 and n260.
  • the embodiment of the present application does not limit the specific frequency bands supported by the radio frequency amplifier circuit.
  • Table 1 shows the tunable effect of the radio frequency amplification circuit provided by the embodiment of the present application when it includes a first transmission path and a second transmission path.
  • the tunable frequency range of the radio frequency amplification circuit includes 24.25 GHz ⁇ 29.5 GHz and 37GHz ⁇ 43.5GHz.
  • the gain is 16.05dB
  • the output 1dB compression point (output power@one db compression, OP1dB)
  • the maximum output added power efficiency maximum power added power efficiency (max power added efficiency, PAEmax) is 10.66 %.
  • the frequency is 37GHz ⁇ 43.5GHz
  • the gain is 15.52dB
  • the output 1dB compression point is 13.78dBm
  • the maximum output additional power efficiency is 16.42%.
  • the equivalent inductance value of the inductor L1 matches the capacitance value of the parasitic capacitance provided by the inductor L3.
  • the radio frequency amplifier circuit is used to transmit higher frequency radio frequency signals.
  • the equivalent inductance value of the inductor L1 changes.
  • the changed equivalent inductance value of the inductor L1 matches the inductance value of the equivalent capacitance provided by the amplifier A1.
  • the radio frequency amplifier circuit is used to transmit lower frequency radio frequency signals and can ensure the relative stability of the radio frequency signal bandwidth output by the radio frequency amplifier circuit.
  • the radio frequency amplification circuit provided by the embodiment of the present application has multiple transmission paths between the radio frequency input end and the radio frequency output end.
  • the multiple transmission paths include multiple magnetically coupled coils.
  • the equivalent inductance matches the equivalent capacitance value, which can ensure that the quality factor remains unchanged, and therefore can ensure that the bandwidth width is relatively stable.
  • the radio frequency transmitter adopts the radio frequency amplification circuit compared with the radio frequency transmitter shown in Figure 1 above, when a single transmitting path or a single receiving path in the radio frequency transmitter adopts the radio frequency amplifying circuit, by using the radio frequency amplifying circuit in the radio frequency amplifying circuit Setting up multiple transmission channels can support multi-band systems without the need to independently set up multiple transmit channels or multiple receive channels. There is no need to set up other devices on the transmit channels or receive channels, such as matching networks or filters. Therefore, the size of the radio frequency transmitter can be reduced and the cost can be reduced.
  • the first coil L1, the second coil L2, the third coil L3 and the fourth coil L4 in the above-mentioned radio frequency amplifier circuit can be symmetrically arranged in at least one wiring layer. .
  • the inductance value of the first coil L1 and the inductance value of the third coil L3 are equal, and the inductance value of the second coil L2 and the inductance value of the fourth coil L4 are equal.
  • the mutual inductance between the first coil L1 and the second coil L2 is equal to the mutual inductance between the third coil L3 and the fourth coil L4; and/or the mutual inductance between the first coil L1 and the third coil L3, It is equal to the mutual inductance between the second coil L2 and the fourth coil L4; and/or the mutual inductance between the first coil L1 and the fourth coil L4 is equal to the mutual inductance between the second coil L2 and the third coil L3.
  • the first amplifier A1 and the third amplifier A3 are amplifiers with the same amplification factor
  • the second amplifier A2 and the fourth amplifier A4 are amplifiers with the same amplification factor.
  • the radio frequency amplifier circuit provided by the embodiment of the present application, by symmetrically arranging the above-mentioned first coil L1 to fourth coil L4, combines the inductance values of the first coil L1 to fourth coil L4, the mutual inductance between the coils, and the amplification factor of the amplifier. Set to the same value, so that the amplified radio frequency signals of the first transmission path and the second transmission path have the same amplitude, so that the signals output by the first transmission path and the second transmission path can be better integrated.
  • the above-mentioned radio frequency amplifier circuit may also include a greater number of transmission paths.
  • the embodiment of the present application does not place a specific limit on the number of transmission paths.
  • the above-mentioned radio frequency amplification circuit may further include a third transmission path disposed between the radio frequency input terminal and the radio frequency output terminal, the third transmission path including a sequentially coupled third transmission path.
  • the inductance of the fifth coil L5 may be equal to the inductance of the first coil L1 and the second coil L3, and the inductance of the sixth coil L6 may be equal to the inductance of the second coil L2 and the fourth coil L4. Can be equal.
  • the embodiment of the present application does not limit the specific inductance values of the fifth coil L5 and the sixth coil L6.
  • the mutual inductance between the fifth coil L5 and the sixth coil L6 may be equal to the mutual inductance between the first coil L1 and the second coil L2; and/or, the mutual inductance between the fifth coil L5 and the second coil L2
  • the mutual inductance between the fifth coil L5 and the first coil L1 may be equal to the mutual inductance between the first coil L1 and the sixth coil L6; and/or the mutual inductance between the fifth coil L5 and the first coil L1 may be equal to the mutual inductance between the above-mentioned second coil L2 and the sixth coil L2.
  • the mutual inductances between coils L6 are equal.
  • the magnetic flux coupled by any two coils may be positive or may be burden.
  • the embodiments of the present application are not limited to whether the magnetic flux coupled by two coils is positive or negative.
  • the following embodiments take the magnetic flux of any two coils as positive as an example for illustrative explanation.
  • first coil L1, second coil L2, third coil L3, fourth coil L4, fifth coil L5 and sixth coil L6 may be symmetrically arranged in at least one wiring layer.
  • the equivalent inductance and equivalent capacitance of the radio frequency amplifier circuit can be adjusted by controlling the on or off of amplifiers in different transmission paths, thereby adjusting the radio frequency
  • the resonant frequency of the amplifier circuit enables the radio frequency amplifier circuit to support the transmission of radio frequency signals in more frequency bands.
  • the above radio frequency amplifier circuit includes a first transmission path, a second transmission path and a third transmission path.
  • the first transmission path includes a first coil L1 and a second coil L2
  • the second transmission path includes a third coil L3 and a fourth coil.
  • Coil L4 the third transmission path includes a fifth coil L5 and a sixth coil L6.
  • the inductance values of the first coil L1 and the third coil L3 are equal.
  • the inductance values of the second coil L2 and the fourth coil L4 are equal.
  • the fifth coil L5 The inductance value of is greater than the inductance value of the first coil L1, and the inductance value of the sixth coil is greater than the inductance value of the second coil L2.
  • the resonant frequency of the radio frequency amplifier circuit may be 25 GHz; when the first transmission path and the second transmission path are turned on and the third transmission path is turned off, the resonant frequency of the radio frequency amplifier circuit may be 20 GHz; when the first transmission path and the third transmission path are turned off, the resonant frequency of the radio frequency amplifier circuit may be 20 GHz.
  • the resonant frequency of the radio frequency amplifier circuit can be 15GHz; when the first transmission path, the second transmission path and the third transmission path are all turned on, the resonant frequency of the radio frequency amplifier circuit
  • the resonant frequency can be 10GHz.
  • the radio frequency amplifier circuit provided by the embodiment of the present application can adjust the equivalent inductance and equivalent capacitance of the radio frequency amplifier circuit by adjusting the on or off of the at least two transmission paths, so as to adjust the resonant frequency of the radio frequency amplifier circuit.
  • the resonant frequency of the radio frequency amplifier circuit can be adjusted to multiple values, so that the radio frequency amplifier circuit can support multiple types of multi-band systems.
  • the above-mentioned radio frequency amplification circuit also includes an input matching network and an output matching network.
  • the input matching network is coupled between the radio frequency input end and at least two transmission paths, and the output matching network is coupled Between at least two transmission paths and the radio frequency output.
  • the radio frequency amplification circuit may include part or all of the structure shown in Figure 15 above, and may also include other functional circuits, which are not specifically limited in the embodiments of the present application.
  • the above-mentioned input matching network is used to receive the radio frequency signal, and after processing the radio frequency signal, it is input to the above-mentioned radio frequency input terminal.
  • the output matching network is used to process the radio frequency signal output from the radio frequency output terminal.
  • the above input matching network and output matching network can be transformer 1 and transformer 1 as shown in Figure 15. Pressure 2.
  • the transformer 1 includes coils L5 to L8, one end of the coil L5 is coupled to one end of the coil L6, the other end of the coil L5 is coupled to the radio frequency input end, the other end of the coil L6 is coupled to the ground end through the radio frequency input end, and the coil L7 One end is coupled to one end of the coil L8.
  • the coupling ends of the coil L7 and the coil L8 are used to receive the first tap inductor center feed (VDD1).
  • the other end of the coil L7 and the other end of the coil L8 are connected to the first amplifier A1 and the first amplifier A1.
  • Transformer 2 includes coils L9 to coil L12. One end of coil L9 is coupled to one end of coil L10. The coupling ends of coil L9 and coil L10 are used to receive the second tap inductor center feed (VDD2). The other end of coil L9 is connected to coil L10. The other end of the coil L11 is coupled to the second amplifier A2 and the fourth amplifier A4. One end of the coil L11 is coupled to one end of the coil L12. The other end of the coil L11 is coupled to the antenna for transmitting radio frequency signals through the radio frequency output end. The coil L12 The other end is coupled to the ground through the RF output.
  • the center feed of the above-mentioned first receiving tap inductor is used to provide the supply voltage of the above-mentioned first amplifier A1 and the third amplifier A3.
  • the center feed of the above-mentioned second tap inductor is used to provide the above-mentioned second amplifier A2 and the fourth amplifier A4. Supply voltage.
  • the embodiments of this application do not limit the specific types of the input matching
  • the radio frequency amplifier circuit provided by the embodiment of the present application can maximize the output power of the above radio frequency amplifier circuit by setting an input matching network and an output matching network.
  • the embodiment of the present application also provides a radio frequency transceiver.
  • the radio frequency transceiver includes: a transmitter and/or a receiver.
  • the transmitter and/or receiver includes a radio frequency amplification circuit and a filter coupled in sequence.
  • the radio frequency amplifier circuit is the radio frequency amplifier circuit shown in Figure 12 to Figure 15.
  • the above-mentioned radio frequency transceiver includes a transmitter.
  • the radio frequency amplification circuit included in the transmitter is a first radio frequency amplification circuit and the filter is a first filter.
  • the radio frequency output end of the first radio frequency amplification circuit is connected with the first filter. Input coupling.
  • the above transmitter also includes a first baseband processing circuit and an upconversion circuit.
  • the output end of the up-conversion circuit is coupled with the radio frequency input end of the first radio frequency amplifier circuit, and the input end of the up-conversion circuit is coupled with the output end of the first baseband processing circuit.
  • the radio frequency transceiver includes a receiver, the radio frequency amplification circuit included in the receiver is a second radio frequency amplification circuit, the filter is a second filter, and the output end of the second filter is connected to the radio frequency input end of the second radio frequency amplification circuit. coupling.
  • the above receiver further includes a down-conversion circuit and a second baseband processing circuit.
  • the input end of the down-conversion circuit is coupled to the radio frequency output end of the second radio frequency amplifier circuit.
  • the output end of the down-conversion circuit is coupled to the second baseband processing circuit. Input coupling.
  • the first baseband processing circuit and the second baseband processing circuit may be the same baseband processing circuit.
  • an embodiment of the present application also provides a communication device.
  • the communication device includes an antenna and a radio frequency transceiver coupled to the antenna.
  • the antenna is used to transmit and receive radio frequency signals.
  • the radio frequency transceiver is as shown in Figure The transceiver shown in 16.

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Abstract

本申请实施例公开了一种射频放大电路、射频收发机及通信设备，涉及通信技术领域，解决了现有的射频收发机不能支持多频段***工作的问题。具体方案为：提供一种射频放大电路，包括设置在射频输入端和射频输出端之间的至少两个传输通路，至少两个传输通路包括第一传输通路和第二传输通路，第一传输通路包括依次耦合的第一放大器、第一线圈、第二线圈和第二放大器，第二传输通路包括依次耦合的第三放大器、第三线圈、第四线圈和第四放大器。其中，第一线圈、第二线圈、第三线圈和第四线圈中的任意两个线圈磁耦合；第一放大器和第二放大器的导通或关断可调，或者，第三放大器和第四放大器的导通或关断可调。

Description

一种射频放大电路、射频收发机及通信设备
本申请要求于2022年5月23日提交国家知识产权局、申请号为202210563667.7、申请名称为“一种射频放大电路、射频收发机及通信设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请实施例涉及通信技术领域，尤其涉及一种射频放大电路、射频收发机及通信设备。
背景技术
射频收发机包括发射通路和接收通路，其中发射通路用于发射射频信号，接收通路用于接收射频信号。随着频谱资源的开发，出现了包括多个工作频段的多频段***，由于现有技术中发射通路或接收通路对应的频段为固定值，上述射频收发机将无法继续支持多频段***，因此需要设计能够支持多频段***的射频收发机。
发明内容
本申请实施例提供一种射频放大电路、射频收发机及通信设备，解决了现有的射频收发机支持的频段为固定值，不能支持多频段***工作的问题。
为达到上述目的，本申请实施例采用如下技术方案：
本申请实施例的第一方面，提供一种射频放大电路，该射频放大电路可以应用于发射通路或接收通路中，该射频放大电路包括：射频输入端和射频输出端、以及设置在射频输入端和射频输出端之间的至少两个传输通路，至少两个传输通路包括第一传输通路和第二传输通路，第一传输通路包括依次耦合的第一放大器、第一线圈、第二线圈和第二放大器，第二传输通路包括依次耦合的第三放大器、第三线圈、第四线圈和第四放大器。其中，第一线圈、第二线圈、第三线圈和第四线圈中的任意两个线圈磁耦合；第一放大器和第二放大器的导通或关断可调，或者，第三放大器和第四放大器的导通或关断可调。
本申请实施例提供的射频放大电路，在射频输入端和射频输出端之间设置多个传输通路，该多个传输通路包括多个磁耦合的线圈，通过调节传输通路中的放大器的导通与关断，以控制传输通路的导通或关断，从而改变该射频放大电路中的任一个线圈的等效电感，同时通过线圈或放大器提供相应的等效电容，能够改变该射频放大电路的谐振频率，因此该射频放大电路能够支持更多个类型的多频段***。而且，本申请实施例提供的射频放大电路，同时调整等效电感和等效电容，等效电感与等效电容的值相匹配，能够保证品质因子不变，因此能够确保带宽的宽度相对稳定。与现有技术中的射频发射机相比，当射频发射机中的单个发射通路或单个接收通路采用该射频放大电路，通过在该射频放大电路中设置多个传输通路，能够实现支持多频段***，而不需要独立设置多个发射通路或多个接收通路，不需要设置发射通路或接收通路上的 其他器件，例如匹配网络或滤波器等器件，因此能够减少射频发射机的体积，降低成本。
结合第一方面，在一种可能的实现方式中，当第一传输通路和第二传输通路中的任一传输通路导通时，射频放大电路用于放大第一射频信号。当第一传输通路和第二传输通路均导通时，射频放大电路用于放大第二射频信号。其中，第一射频信号的频率高于第二射频信号的频率。
本申请实施例提供的射频放大电路，通过传输通路的导通或关断，从而改变该射频放大电路中的等效电感、以及等效电容，因此能够改变该射频放大电路的谐振频率，从而该射频放大电路能够支持更多个类型的多频段***。
结合第一方面，在一种可能的实现方式中，第一线圈的感值和第三线圈的感值相等，第二线圈的感值和第四线圈的感值相等。
结合第一方面，在一种可能的实现方式中，第一线圈和第二线圈之间的互感，与第三线圈和第四线圈之间的互感相等。和/或，第一线圈和第三线圈的互感，与第二线圈和第四线圈的互感相等。和/或，第一线圈与第四线圈之间的互感，与第二线圈和第三线圈的互感相等。
结合第一方面，在一种可能的实现方式中，第一放大器和第三放大器为放大倍数相同的放大器，第二放大器和第四放大器为放大倍数相同的放大器。
本申请实施例提供的射频放大电路，通过将上述第一线圈L1至第四线圈L4对称设置，将第一线圈L1至第四线圈L4的感值、线圈之间的互感、以及放大器的放大倍数设置为相同的值，从而使得第一传输通路与第二传输通路，功率放大后的射频信号具有相同的幅值，使得第一传输通路和第二传输通路输出的信号能够更好地融合。
结合第一方面，在一种可能的实现方式中，至少两个传输通路还包括：第三传输通路，第三传输通路包括第五放大器、第五线圈、第六线圈和第六放大器，第一线圈、第二线圈、第三线圈、第四线圈、第五线圈和第六线圈中的任意两个线圈磁耦合。
本申请实施例提供的射频放大电路，通过调节上述至少两个传输通路的导通或关断，能够调节该射频放大电路的等效电感和等效电容，以调节该射频放大电路的谐振频率，当该射频放大电路包括多个传输通路时，该射频放大电路的谐振频率可以调整为多个值，从而该射频放大电路能够支持多个类型的多频段***。
结合第一方面，在一种可能的实现方式中，第一线圈、第二线圈、第三线圈、第四线圈、第五线圈和第六线圈，对称设置在至少一个布线层中。
本申请实施例提供的射频放大电路，通过将第一线圈至第六线圈对称设置在至少一个布线层中，从而该第一线圈至第六线圈中的任意两个线圈磁耦合，通过控制第一传输通路至的第三传输同路的导通或关断，能够调整射频放大电路中任一个线圈的感值，改变射频放大电路的谐振频率，从而该射频放大电路能够支持多个类型的多频段***。
结合第一方面，在一种可能的实现方式中，射频放大电路还包括输入匹配网络和输出匹配网络，输入匹配网络耦合在射频输入端与至少两个传输通路之间，输出匹配网络耦合在至少两个传输通路与射频输出端之间。
本申请实施例提供的射频放大电路，通过设置输入匹配网络和输出匹配网络，能 够实现上述射频放大电路的输出功率的最大化。
本申请实施例的第二方面，提供一种射频收发机，该射频收发机包括：发射机和/或接收机。发射机和/或接收机包括依次耦合的射频放大电路和滤波器，射频放大电路为如上述第一方面或第一方面的任一种可能的实现方式的射频放大电路。
结合第二方面，在一种可能的实现方式中，上述射频收发机包括发射机，发射机包括的射频放大电路为第一射频放大电路、滤波器为第一滤波器，第一射频放大电路的输出端与第一滤波器的输入端耦合。
结合第二方面，在一种可能的实现方式中，上述发射机还包括第一基带处理电路和上变频电路，上变频电路的输出端与第一射频放大电路的输入端耦合，上变频电路的输入端与第一基带处理电路的输出端耦合。
结合第二方面，在一种可能的实现方式中，射频收发机包括接收机，该接收机包括的射频放大电路为第二射频放大电路、滤波器为第二滤波器，第二滤波器的输出端与第二射频放大电路的输入端耦合。
结合第二方面，在一种可能的实现方式中，上述接收机还包括下变频电路和第二基带处理电路，下变频电路的输入端与第二射频放大电路的输出端耦合，下变频电路的输出端与第二基带处理电路的输入端耦合。
本申请实施例的第三方面，提供一种通信设备，该通信设备包括天线、以及与天线耦合的射频收发机，天线用于发射或接收射频信号，射频收发机为如上述第二方面或第二方面的任一种可能的实现方式所述的射频收发机。
本申请中第二方面和第三方面的描述，可以参考第一方面的详细描述；并且，第二方面和第三方面的有益效果，可以参考第一方面的有益效果分析，此处不再赘述。
附图说明
图1为本申请实施例提供的一种射频收发机的结构示意图；
图2为本申请实施例提供的一种射频放大电路的结构示意图；
图3为本申请实施例提供的一种多频带匹配网络的结构示意图；
图4为本申请实施例提供的另一种射频放大电路的结构示意图；
图5为本申请实施例提供的一种可调谐选频网络的结构示意图；
图6为本申请实施例提供的一种理想并联RLC谐振网络的结构示意图；
图7为本申请实施例提供的一种谐振腔并联电路的结构示意图；
图8为本申请实施例提供的一种并联谐振电路的结构示意图；
图9为本申请实施例提供的一种变压器匹配网络的结构示意图；
图10为本申请实施例提供的另一种变压器匹配网络的结构示意图；
图11为本申请实施例提供的又一种变压器匹配网络的结构示意图；
图12为本申请实施例提供的又一种射频放大电路的结构示意图；
图13为本申请实施例提供的再一种射频放大电路的结构示意图；
图14为本申请实施例提供的再一种射频放大电路的结构示意图；
图15为本申请实施例提供的再一种射频放大电路的结构示意图；
图16为本申请实施例提供的一种射频收发机的结构示意图；
图17为本申请实施例提供的一种通信设备的结构示意图。
具体实施方式
下文将详细论述各实施例的制作和使用。但应了解，本申请提供的许多适用发明概念可实施在多种具体环境中。所论述的具体实施例仅仅说明用以实施和使用本说明和本技术的具体方式，而不限制本申请的范围。
除非另有定义，否则本文所用的所有科技术语都具有与本领域普通技术人员公知的含义相同的含义。
各电路或其它组件可描述为或称为“用于”执行一项或多项任务。在这种情况下，“用于”用来通过指示电路/组件包括在操作期间执行一项或多项任务的结构(例如电路***)来暗指结构。因此，即使当指定的电路/组件当前不可操作(例如未打开)时，该电路/组件也可以称为用于执行该任务。与“用于”措辞一起使用的电路/组件包括硬件，例如执行操作的电路等。
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行描述。在本申请中，“至少一个”是指一个或者多个，“多个”是指两个或两个以上。“和/或”，描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B的情况，其中A，B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。“以下至少一项(个)”或其类似表达，是指的这些项中的任意组合，包括单项(个)或复数项(个)的任意组合。例如，a，b或c中的至少一项(个)，可以表示：a，b，c，a和b，a和c，b和c或a、b和c，其中a、b和c可以是单个，也可以是多个。另外，在本申请的实施例中，“第一”、“第二”等字样并不对数量和次序进行限定。
需要说明的是，本申请中，“示例性的”或者“例如”等词用于表示作例子、例证或说明。本申请中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释为比其他实施例或设计方案更优选或更具优势。确切而言，使用“示例性的”或者“例如”等词旨在以具体方式呈现相关概念。
在介绍本申请实施例之前，首先对本申请涉及的背景技术进行介绍说明。
射频收发机是通信***中的前端部分，一般包括发射通路和接收通路，其中发射通路用于发射射频信号，接收通路用于接收射频信号。随着频谱资源的开发，出现了包括多个工作频段的多频段***，由于多频段***具有自适应性与可扩缩性的优点，因此设计能够支持多频段***的射频收发机，成为主要发展方向。
如图1所示为一种射频收发机，该射频收发机通过单独设置多个发射通路和多个接收通路，从而实现不同频段的射频信号的发送或接收，以支持多频带***。该射频收发机中包括上混频电路、下混频电路、发射通路1至发射通路P、以及接收通路1至接收通路Q等器件。其中，每个发射通路或接收通路与天线耦合，P和Q均为大于1的整数，每个发射通路或接收通路用于传输一个固定频段的射频信号，每个发射通路或接收通路中设置有与该频段对应的放大器和滤波器等器件。上述放大器的输入端可以等效为下述实施例所述的射频输入端，放大器的输出端可以等效为下述实施例所述的射频输出端，射频输入端用于输入射频信号，放大器用于放大射频信号，射频输出 端用于输出放大后的射频信号。
例如，发射通路1用于传输频段为f1的射频信号，该发射通路1中可以包括放大器a1和带通滤波器f1，发射通路P用于传输频段为fP的射频信号，该发射通路P中可以包括放大器aP和带通滤波器fP。接收通路1用于传输频段为F1的射频信号，该接收通路1中可以包括放大器A1和带通滤波器F1，接收通路Q用于传输频段为FQ的射频信号，该接收通路Q中可以包括放大器AQ和带通滤波器FQ。
上述上混频电路用于根据基带信号产生射频信号，上述发射通路1至发射通路P中对应的放大器用于对该射频信号进行功率放大处理，功率放大处理后的射频信号可以经天线发送。上述天线还可以用于接收射频信号，上述接收通路1至接收通路Q中对应的放大器用于对该射频信号进行功率放大处理，下混频电路用于根据该功率放大处理后的射频信号产生基带信号。
但是，当上述多频段***的类型变化时，例如，从***无线***变化为第五代无线***时，该变化后的多频段***包括的工作频段也将变化，由于上述每个发射通路或接收通路对应的频段为固定值，上述射频收发机将无法继续支持该类型变化后的多频段***。并且，上述射频收发机中，当多频段***包括多个频段时，需要独立设置多个发射通路或多个接收通路，每个发射通路或接收通路与一个频段对应，每个通路中设置与传输的频段对应的放大器和滤波器等器件，将会导致射频收发机的体积大、成本高。
为了实现上述射频收发机支持的频段可调整，减小该射频收发机的体积，降低成本，需要对射频收发机中的发射通路和接收通路重新设计。
如图2所示为一种射频放大电路，该射频放大电路的输入端为射频输入端，该射频放大电路的输出端为射频输出端，该射频放大电路可以用于替换上述发射通路中的放大器，或者，可以用于替换上述接收通路中的放大器，该射频放大电路通过设置多频带匹配网络，实现不同频段的射频信号的发送或接收。具体的，该射频放大电路包括依次耦合的输入多频带匹配网络、放大器1、级间多频带匹配网络、放大器2和输出多频带匹配网络。其中，输入多频带匹配网络用于接收多个频段的射频信号(例如，f1、f2和f3等频段的射频信号)，输出多频带匹配网络用于输出多个频段的射频信号，输入多频带匹配网络和输出多频带匹配网络用于实现射频放大电路的输出功率的最大化，级间多频带匹配网络用于实现射频放大电路输出增益的最大化，放大器1和放大器2用于放大射频信号的功率。
如图2所示的射频放大电路通过设置多频带匹配网络，能够使一条通路支持多个频段的射频信号的传输。与图1所示的射频收发机相比，采用图2所示的射频放大电路的射频收发机，不需要单独设置多个发射通路或多个接收通路，可以减少放大器的数量，从而能够减少射频收发机的体积，降低成本。但是，上述射频放大电路中的多频带匹配网络的内部通常包括与各频段对应的匹配网络。例如，如图3所示，该多频带匹配网络包括：与f1频段对应的匹配网络f1，与f2频段对应的匹配网络f2，与f3频段对应的匹配网络f3等匹配网络，其中匹配网络包括电容、电阻、电感和变压器等器件。
为了实现上述射频收发机支持的频段可调整，进一步减小射频放大电路的体积、 降低成本，可以将上述射频放大电路中的，级间多频带匹配网络重新设置为可调谐选频网络，将输入多频带匹配网络和输出多频带匹配网络重新设置为宽带匹配网络。
如图4所示为本申请实施例提供的一种射频放大电路，该射频放大电路的输入端为射频输入端，该射频放大电路的输出端为射频输出端，该射频放大电路包括依次耦合的输入宽带匹配网络、放大器3、可调谐选频网络、放大器4和输出宽带匹配网络。其中，上述可调谐选频网络的谐振频率可调，从而能够实现射频放大电路支持的频段可调整，能够实现射频收发机支持的频段可调整。
示例性的，如图5所示为一种可调谐选频网络，该可调谐选频网络通过电容值可调整的可调谐电容实现谐振频率的调整，该可调谐电容包括开关电容1至开关电容6，每个开关电容内部包括对应的开关和电容，通过调整开关的导通或关断，将对应的开关电容导通或关断，从而调整上述可调谐电容的容值，以调整该可调谐选频网络的等效电容的容值，实现射频放大电路支持的频段的调整。
其中，上述可调谐电容可以为多比特(bit)可调谐电容(或者，可以称为数字可编程电容器)。示例性的，该多bit可调谐电容可以包括8个开关电容，该8个开关电容可以通过3bits的二进制数进行编码，每个开关电容内部包括相对应的开关和电容，通过调整开关的导通或关断，将对应的开关电容导通或关断，从而调整该多bit可调谐电容的容值。
如图4所示的射频放大电路，通过设置输入宽带匹配网络、可调谐选频网络和输出宽带匹配网络，能够实现射频放大电路支持的频段可调，而且，与图1所示的射频收发机相比，不需要单独设置多个发射通路和多个接收通路，因此可以减小射频放大电路的体积，降低成本。
下面以如图6中的(a)所示的理想并联RLC谐振网络为例，对上述可调谐选频网络的原理进行详细说明，该理想并联RLC谐振网络包括并联设置的电阻R、电容C和电感L。在并联RLC谐振网络中，谐振频率的计算公式为：
其中，f表示谐振频率，L为电感L的感值，C为电感C的容值。当电容C的容值变大，或者，电感L的感值变大时，上述理想并联RLC谐振网络的谐振频率将变小。当电容C的容值变小，或者，电感L的感值变小时，上述理想并联RLC谐振网络的谐振频率将变大。
在上述并联RLC谐振网络中，角频率的计算公式为：
其中，ω表示角频率。当电容C的容值变大，或者，电感L的感值变大时，角频率ω的值变小。当电容C的容值变小，或者，电感L的感值变小时，角频率ω的值变大。
在谐振电路中，通过品质因子(或称为品质因数，或称为品质因素)Q，表征一个储能器件(如电感L、电容C等)所储能量与每周期损耗能量之比的一种质量指标，器件的Q值愈大，用该元件组成的电路或网络的选择性愈佳。在上述理想并联RLC谐 振网络中，结合上述谐振频率和角频率的计算公式，品质因子Q的计算公式可以表示为：
其中，上述R为电阻R的阻值。根据上式可知，在电阻R的阻值不变的情况下，当电容C的容值越大时，或者，当电感L的感值越小时，品质因子Q的值越大。在电阻R的阻值不变的情况下，当电容C的容值越小，或者，当电感L的感值越大时，品质因子Q的值越小。
在谐振网络中，一般以射频信号的增益下降3dB时，对应的两个频率确定的区间作为带宽，谐振频率为该带宽的中心频率，例如图6中的(b)所示，射频信号的增益下降3dB时，对应频率f1和频率f2，此时该谐振网络的带宽为f2-f1，该谐振网络的谐振频率为f0。上述带宽的宽度与品质因子Q的值相关，在上述理想并联RLC谐振网络中，结合上述谐振频率、角频率和品质因子的计算公式，带宽的计算公式可以表示为：
其中，BW表示带宽。根据上述带宽BW的计算公式，结合角频率ω和品质因子Q的计算公式可知，当电容C的容值越大时，角频率ω的值越小，品质因子Q的值越大，带宽BW越小。当电容C的容值越小时，角频率ω的值越大，品质因子Q的值越小，带宽BW越大。
根据上述谐振频率的计算公式可知，上述如图5所示的可调谐选频网络中，是通过调整开关电容的容值，从而改变可调谐选频网络的谐振频率。具体的，通过将开关电容的容值调大，从而将谐振频率调小；通过将开关电容的容值调小，从而将谐振频率调大。但是，根据上述角频率ω、品质因子Q和带宽BW的计算公式可知，在电容C变大，角频率ω的值变小时，品质因子Q的值将变大，带宽BW将变小。当电容C变小，角频率ω的值变大时，品质因子Q的值将变小，带宽BW将变大。可以理解的，在调整谐振频率的过程中，改变电容的容值而不改变电感的感值，由于品质因子Q的变化，应用该可调谐选频网络的射频放大电路的带宽会波动。
进一步的，为了使得上述可调谐选频网络的带宽稳定，可以通过在调整电容的容值时，同时调整电感的感值，以使得品质因子Q稳定，从而保证带宽BW相对稳定。
如图7所示为一种谐振腔并联电路，通过并联改变电容的容值，该谐振腔并联电路包括第一谐振腔和第二谐振腔。第一谐振腔中包括并联耦合的电阻R1、电容C1和电感L1，第二谐振腔中包括并联耦合的电阻R2、电容C2和电感L2。其中，电阻R1和电阻R2的阻值均为R，电容C1和电容C2的容值均为C，电感L1和电感L2的感值均为L，两个谐振腔的谐振频率均为f0。结合上述谐振频率的计算公式可知：
上述谐振腔并联电路中，等效电容的值和等效电感的值可以用如下公式表示：
Ceq＝2C
Leq＝L/2
其中，Ceq表示等效电容的值，Leq表示等效电感的值，结合上述谐振频率的计算公式可知：
可以理解的，将上述第一谐振腔和第二谐振腔并联耦合，组成谐振腔并联电路，该谐振腔并联电路的谐振频率f1，与第一谐振腔或第二谐振腔的谐振频率f0，为相同的谐振频率。
通过使上述两个谐振腔的电感之间磁耦合，以使得上述谐振并联电路中的等效电感的值变化，从而调节该谐振并联电路的谐振频率。具体的，当该两个电感耦合的磁通量为正时，与两个电感之间没有磁耦合相比，电感的等效电感的值将会变大，并联谐振电路的谐振频率将变小；当两个电感耦合的磁通量为负时，与两个电感之间没有磁耦合相比，电感的等效电感的值将变小，并联谐振电路的谐振频率变大。
如图8所示为一种并联谐振电路，该谐振腔并联电路包括第一谐振腔和第二谐振腔。第一谐振腔中包括并联耦合的电阻R1、电容C1和电感L1，第二谐振腔中包括并联耦合的电阻R2、电容C2和电感L2。其中，电阻R1和电阻R2的阻值均为R，电容C1和电容C2的容值均为C，电感L1和电感L2的感值均为L，电感L1与L2磁耦合，耦合系数为k，当两个谐振腔内的电感L1与电感L2之间没有磁耦合时，该两个谐振腔的谐振频率均为f0，并联谐振电路的谐振频率也为f0，f0可以表示为：
该谐振腔并联电路中，等效电容的值和等效电感的值可以用如下公式表示：
Ceq＝2C
Leq＝(L+M)/2>L/2
其中，Ceq表示等效电容的值，Leq表示等效电感的值，M表示电感L1与电感L2之间的互感。
当需要将并联谐振电路的谐振频率调整为f1(f1＝α·f0)时，可以将电感L1与电感L2之间的互感调整为：
其中，M表示电感L1与电感L2之间的互感，L表示电感L1或电感L2的感值，α表示谐振频率f1是谐振频率f0的α倍。
此时，并联谐振电路的等效电感的值Leq可以用下式表示：
再将等效电容的值Ceq进行调整，调整后等效电容的值Ceq可以用下式表示：
结合上述谐振频率的计算公式可知，该并联谐振电路的谐振频率f1可以用如下公式表示：
根据上述品质因子Q的计算公式可知，该并联谐振电路的品质因子Q1可以用如下公式表示：
根据上述带宽BW的计算公式可知，该并联谐振电路的带宽BW1可以用如下公式表示：
可以理解的，上述图5所示的可调谐选频网络中，通过改变电容的容值，从而调整该可调谐选频网络的谐振频率，但是，将改变该可调谐选频网络的品质因子的值，导致在不同谐振频率时带宽波动较大，而图8所示的谐振腔并联电路，通过在调整电感的感值时，根据电感的感值相应调整电容的容值，能够将谐振腔并联电路的谐振频率从f0调整至f1，并且不会改变该谐振腔并联电路的品质因子的值，从而能够保证该谐振腔并联电路的带宽相对稳定。
对于下文提供的由耦合谐振腔构成的变压器匹配网络，上述原理同样适用。
如图9所示为一种由耦合谐振腔构成的变压器匹配网络，该变压器匹配网络包括第一通路和第二通路。其中，第一通路包括放大器A1、第一谐振腔、第二谐振腔和放大器A2，第一谐振腔包括并联耦合的电阻R1、电容C1和电感L1，第二谐振腔包括并联耦合的电感L2、电容C2和电阻R2。电阻R1的一端与放大器A1的一端耦合，电阻R1的另一端与接地端耦合，电阻R2的一端与放大器A2的一端耦合，电阻R2的另一端与接地端耦合。第二通路包括放大器A3、第三谐振腔、第四谐振腔、和放大器A4，第三谐振腔包括并联耦合的电阻R3、电容C3和电感L3，第四谐振腔包括并联耦合的电感L4、电容C4和电阻R4。电阻R3的一端与放大器A3的一端耦合，电阻R3的另一端与接地端耦合，电阻R4的一端与放大器A4的一端耦合，电阻R4的另一端与接地端耦合。放大器A1与放大器A3的另一端耦合可以作为射频输入端，放大器A2与放大器A4的另一端耦合可以作为射频输出端。
其中，电感L1与电感L3的感值相等，L2与电感L4的感值相等。电感L1至电感L4中的任意两个电感磁耦合。电感L1与电感L2之间的耦合系数为K12，电感L1与电感L3之间的耦合系数为K13，电感L1与电感L4之间的耦合系数为K14，电感L1与电感L3之间的耦合系数为K13，电感L2与电感L3之间的耦合系数为K23，电感L2与电感L4之间的耦合系数为K24。放大器A1和放大器A3为放大倍数相同的放大器，放大器A2和放大器A4为放大倍数相同的放大器。射频信号经放大器A1至放大器A2的通路为第一通路，射频信号经放大器A3至放大器A4的通路为第二通路。
当放大器A1至A4均导通时，上述第一通路和第二通路均为导通的状态，上述图9所示的变压器匹配网络对应的等效电路可以如图10所示，该等效电路的I-V(电流-电压)特性矩阵可以用如下公式表示：
其中，电压V1至V4分别表示电感L1至电感L4两端的电压，s(或写为jω)表示当前频率下的相位关系，L1至L4分别表示电感L1至电感L4的感值，电流I1至电流I4分别表示电感L1至电感L4中的电流值，M12、M13至M34分别表示电感L1至电感L4中任意两个电感之间的互感的值，该互感的值可以通过以下公式计算，
其中，Mij表示电感Li与电感Lj之间的互感的值，Kij表示电感Li与电感Lj之间的耦合系数，Li表示电感Li的电感值，Lj表示电感Lj的电感值。
由于上述放大器A1和放大器A3为放大倍数相同的放大器，放大器A2和放大器A4为放大倍数相同的放大器，上述电压V1至V4之间的关系可以用如下公式表示，
V1＝V3
V2＝V4
电压、电流与互感之间的关系可以用如下公式表示，
其中，表示电压向量，表示互感向量，表示电流向量，根据上式对等效电路中的I-V(电流-电压)特性矩阵，进行化简可以得到如下公式，
其中，V1表示电感L1两端的电压，V2表示电感L2两端的电压，s(或写为jω)表示当前频率下的相位关系，电流I1至电流I4分别表示电感L1至电感L4的电流值，表示上述变压器匹配网络的等效互感的感值。
由于上述电感L1与电感L3的感值相等，L2与电感L4的感值相等，可以得到如下公式，
L1＝L3，L2＝L4
M12＝M34＝Mp
M13＝M24＝Mi
M14＝M24＝Mc
根据上述公式可以求出上述变压器匹配网络中，等效互感的感值Meq可以用如下公式表示，
根据上述公式可知，当放大器A1至A4均导通时，上述第一通路和第二通路均为导通的状态，该变压器匹配网络中电感L1的等效互感为该等效互感的感值大于而上述图7所示的谐振腔并联电路中电感L1的等效感值Leq＝L/2，结合上述谐振频率的计算公式可知，该变压器匹配网络的谐振频率更低。可以理解的，当上述射频放大电路，采用该变频器匹配网络作为可调谐选频网络，能够调整谐振频率，而且 可以支持频率更低的频带，同时能够保证带宽的相对稳定。
结合图9，当上述放大器A1和A2导通，A2和A3关断时，上述第一通路为导通的状态，第二通路为关断的状态，上述图9所示的变压器匹配网络对应的等效电路可以如图11所示，该变压器匹配网络包括电感L1至电感L3，和寄生电容Cpar，该等效电路中的关系可以用如下公式表示：
其中，电压V1和电压V2表示电感L1和电感L2两端的电压，L1和L2表示电感L1和电感L2的感值，M12和M13等表示电感之间的互感，C表示寄生电容Cpar的容值，当寄生电容Cpar的容值为0，或者，为无穷大时，电感L1的等效感值可以用如下公式表示：
根据上述公式可知，当上述放大器A1和A2导通，A3和A4关断时，上述第一通路为导通的状态，第二通路为关断的状态，该变压器匹配网络中电感L1的等效互感为与上述放大器A1至A4均导通时，第一通路和第二通路也均为导通的状态，该变压器匹配网络中电感L1的等效互感相比，电感L1的等效互感较小。结合上述谐振频率的计算公式，可以理解的，当上述第一通路为导通的状态，第二通路为关断的状态时，该变压器匹配网络的谐振频点较高，能够支持较高频率的频段，当上述第一通路和第二通路均为导通的状态时，该变压器匹配网络的谐振频点较低，能够支持较低频率的频段。
综上可知，如图9所示的变压器匹配网络，通过调节放大器的导通与关断，调整电感L1的等效电感，从而能够调整变压器匹配网络的谐振频率，而且能够确保带宽的相对稳定。同时，与上述图1所示的射频发射机相比，不需要独立设置多个发射通路或多个接收通路，不需要设置大量的放大器和滤波器，因此能够减少射频发射机的体积，降低成本。
基于上述原理，如图12所示，本申请实施例提供一种射频放大电路，上述图9至图11所示的变压器匹配网络的原理同样适用该射频放大电路。该射频放大电路可以应用于发射通路或接收通路中，该射频放大电路包括射频输入端和射频输出端、以及设置在射频输入端和射频输出端之间的至少两个传输通路，该至少两个传输通路包括第一传输通路和第二传输通路，第一传输通路包括依次耦合的第一放大器A1、第一线圈L1、第二线圈L2和第二放大器A2，第二传输通路包括依次耦合的第三放大器A3、第三线圈L3、第四线圈L4和第四放大器A4。其中，上述第一线圈L1、第二线圈L2、第三线圈L3和第四线圈L4中的任意两个线圈磁耦合。另外，第一传输通路和第二传输通路的导通或关断可调。
在该射频放大电路中，射频输入端用于接收射频信号，至少两个传输通路用于对接收的射频信号进行功率放大，射频输出端用于输出放大后的射频信号。具体的，上 述第一传输通路和第二传输通路中的第一放大器A1至第四放大器A4中的任一放大器，可用于对接收的射频信号进行功率放大。
可选的，上述第一线圈L1、第二线圈L2、第三线圈L3和第四线圈L4中的任意两个线圈耦合的磁通量可以为正，也可以为负。本申请实施例对于任意两个线圈耦合的磁通量具体为正，还是为负并不限定。
可以理解的，上述第一线圈L1至第四线圈L4中，当任意两个线圈的耦合的磁通量为正时，与该两个线圈之间没有磁耦合相比，任意一个线圈的等效电感的值将会变大。当任意两个线圈的耦合的磁通量为负时，与该两个线圈之间没有磁耦合相比，任意一个线圈的等效电感的值将会变小。
可选的，上述第一放大器A1至第四放大器A4可以通过晶体管来实现，比如，该晶体管可以为绝缘栅场效应晶体管(insulated gate field effect transistor，IGFET)，本申请实施例对于晶体管的具体类型并不限定。在实际应用中，上述第一放大器A1至第四放大器A4中的任一放大器，可以采用共源极结构的放大器，也可以采用共栅极结构放大器，本申请实施例对于上述第一放大器至第四放大器具体的结构并不限定。
可选的，当上述射频放大电路包括第一传输通路和第二传输通路时，上述射频放大电路可以通过调节上述第一放大器A1和第二放大器A2的导通或关断，以使得第一传输通路导通或关断，或者，可以通过调节上述第三放大器A3和第四放大器A4的导通或关断，以使得第二传输通路导通或关断，从而调整射频放大电路中上述第一线圈L1至第四线圈L1的等效感值。本申请实施例对于具体调节哪两个放大器的导通或关断并不限定。
可选的，当第一传输通路和第二传输通路中的任一传输通路导通时，上述射频放大电路可以用于放大第一射频信号。当第一传输通路和第二传输通路均导通时，射频放大电路可以用于放大第二射频信号。其中，第一射频信号的频率高于第二射频信号的频率。
示例性的，上述第一射频信号对应的频段可以为37GHz-43.5GHz，上述第二射频信号对应的频段可以为24.25GHz-29.5GHz。
可选的，本申请实施例提供的射频放大电路支持的第二射频信号的频段可以包括n257、n258、n259和n260，本申请实施例对于射频放大电路支持的具体频段并不限定。
示例性的，如表1所示为本申请实施例提供的射频放大电路，包括第一传输通路和第二传输通路时的可调谐效果，该射频放大电路的可调谐频率范围包括24.25GHz～29.5GHz和37GHz～43.5GHz。其中，在频率为24.25GHz～29.5GHz时，增益为16.05dB，输出1dB压缩点(output power@one db compression，OP1dB)为15.64dBm，最大输出附加功率效率(max power added efficiency，PAEmax)为10.66％。在频率为37GHz～43.5GHz时，增益为15.52dB，输出1dB压缩点为13.78dBm，最大输出附加功率效率为16.42％。
表1

当第一传输通路导通，第二传输通路关断时，电感L1的等效感值，与电感L3提供的寄生电容的容值匹配，该射频放大电路用于传输较高频率的射频信号，当第一传输通路和第二传输通路均导通时，电感L1的等效感值改变，该改变后的电感L1的等效感值，与放大器A1提供的等效电容的感值匹配，该射频放大电路用于传输较低频率的射频信号，并且能够确保射频放大电路输出射频信号带宽的相对稳定。
本申请实施例提供的射频放大电路，在射频输入端和射频输出端之间设置多个传输通路，该多个传输通路包括多个磁耦合的线圈，通过调节传输通路中的放大器的导通与关断，以控制传输通路的导通或关断，从而改变该射频放大电路中的任一个线圈的等效电感，同时通过线圈或放大器提供相应的等效电容，能够改变该射频放大电路的谐振频率，因此该射频放大电路能够支持更多个类型的多频段***。而且，本申请实施例提供的射频放大电路，同时调整等效电感和等效电容，等效电感与等效电容的值相匹配，能够保证品质因子不变，因此能够确保带宽的宽度相对稳定。当射频发射机采用该射频放大电路时，与上述图1所示的射频发射机相比，当射频发射机中的单个发射通路或单个接收通路采用该射频放大电路，通过在该射频放大电路中设置多个传输通路，能够实现支持多频段***，而不需要独立设置多个发射通路或多个接收通路，不需要设置发射通路或接收通路上的其他器件，例如匹配网络或滤波器等器件，因此能够减少射频发射机的体积，降低成本。
在一种可能的实施方式中，如图13所示，上述射频放大电路中的第一线圈L1、第二线圈L2、第三线圈L3和第四线圈L4，可以对称设置在至少一个布线层中。
可选的，上述第一线圈L1的感值和第三线圈L3的感值相等，第二线圈L2的感值和第四线圈L4的感值相等。
可选的，第一线圈L1和第二线圈L2之间的互感，与第三线圈L3和第四线圈L4之间的互感相等；和/或，第一线圈L1和第三线圈L3的互感，与第二线圈L2和第四线圈L4的互感相等；和/或，第一线圈L1与第四线圈L4之间的互感，与第二线圈L2和第三线圈L3的互感相等。
可选的，第一放大器A1和第三放大器A3为放大倍数相同的放大器，第二放大器A2和第四放大器A4为放大倍数相同的放大器。
本申请实施例提供的射频放大电路，通过将上述第一线圈L1至第四线圈L4对称设置，将第一线圈L1至第四线圈L4的感值、线圈之间的互感、以及放大器的放大倍数设置为相同的值，从而使得第一传输通路与第二传输通路，功率放大后的射频信号具有相同的幅值，使得第一传输通路和第二传输通路输出的信号能够更好地融合。
进一步的，上述射频放大电路，除了包括第一传输通路和第二传输通路，还可以包括更多数量的传输通路，本申请实施例对该传输通路的数量不作具体限制。在一种可能的实施方式中，如图14所示，上述射频放大电路还可以包括设置在射频输入端和射频输出端之间的第三传输通路，所述第三传输通路包括依次耦合的第五放大器A5、第五线圈L5、第六线圈L6和第六放大器A6，上述第一线圈L1、第二线圈L2、第三线圈L3、第四线圈L4、第五线圈L5和第六线圈L6中的任意两个线圈磁耦合。
可选的，第五线圈L5的感值可以与上述第一线圈L1和第二线圈L3的感值可以相等，第六线圈L6的感值与上述第二线圈L2和第四线圈L4的感值可以相等。本申请实施例对于第五线圈L5和第六线圈L6具体的感值并不限定。
可选的，第五线圈L5和第六线圈L6之间的互感，可以与上述第一线圈L1和第二线圈L2之间的互感相等；和/或，第五线圈L5和第二线圈L2之间的互感，可以与上述第一线圈L1与第六线圈L6之间的互感相等；和/或，第五线圈L5和第一线圈L1之间的互感，可以与上述第二线圈L2和第六线圈L6之间的互感相等。
可选的，上述第一线圈L1、第二线圈L2、第三线圈L3、第四线圈L4、第五线圈L5和第六线圈L6中，任意两个线圈耦合的磁通量可以为正，也可以为负。本申请实施例对于两个线圈耦合的磁通量具体为正，还是为负并不限定，下述实施例以任意两个线圈的磁通量为正为例进行示例性说明。
可选的，上述第一线圈L1、第二线圈L2、第三线圈L3、第四线圈L4、第五线圈L5和第六线圈L6，可以对称设置在至少一个布线层中。
可选的，当上述射频放大电路包括多个传输通路时，通过控制不同传输通路中的放大器的导通或关断，能够调节该射频放大电路的等效电感和等效电容，从而调节该射频放大电路的谐振频率，以使得该射频放大电路能够支持更多频段的射频信号的传输。
例如，以上述射频放大电路包括第一传输通路、第二传输通路和第三传输通路，第一传输通路包括第一线圈L1和第二线圈L2，第二传输通路包括第三线圈L3和第四线圈L4，第三传输通路包括第五线圈L5和第六线圈L6，第一线圈L1与第三线圈L3的感值相等，第二线圈L2与第四线圈L4的感值相等，第五线圈L5的感值大于第一线圈L1的感值，第六线圈的感值大于第二线圈L2的感值为例，当第一传输通路导通，第二传输通路和第三传输通路关断时，该射频放大电路的谐振频率可以为25GHz；当第一传输通路和第二传输通路导通，第三传输通路关断时，该射频放大电路的谐振频率可以为20GHz；当第一传输通路和第三传输通路导通，第二传输通路关断时，该射频放大电路的谐振频率可以为15GHz；当第一传输通路、第二传输通路和第三传输通路均导通时，该射频放大电路的谐振频率可以为10GHz。
本申请实施例提供的射频放大电路，通过调节上述至少两个传输通路的导通或关断，能够调节该射频放大电路的等效电感和等效电容，以调节该射频放大电路的谐振频率，当该射频放大电路包括多个传输通路时，该射频放大电路的谐振频率可以调整为多个值，从而该射频放大电路能够支持多个类型的多频段***。
在一种可能的实施方式中，如图15所示，上述射频放大电路还包括输入匹配网络和输出匹配网络，输入匹配网络耦合在射频输入端与至少两个传输通路之间，输出匹配网络耦合在至少两个传输通路与射频输出端之间。
在实际应用中，射频放大电路可以包括上面图15所示的结构的部分或全部，还可以包括其他的功能电路，本申请实施例对此不作具体限定。
上述输入匹配网络用于接收射频信号，对该射频信号进行处理后，输入上述射频输入端，输出匹配网络用于对射频输出端输出的射频信号进行处理。
可选的，上述输入匹配网络和输出匹配网络，可以为如图15所示的变压器1和变 压器2。其中，变压器1包括线圈L5至线圈L8，线圈L5的一端与线圈L6的一端耦合，线圈L5的另一端与射频输入端耦合，线圈L6的另一端通过射频输入端与接地端耦合，线圈L7的一端和线圈L8的一端耦合，线圈L7和线圈L8的耦合端用于接收第一抽头电感中心馈电(VDD1)，线圈L7的另一端和线圈L8的另一端，与上述第一放大器A1和第三放大器A3耦合。变压器2包括线圈L9至线圈L12，线圈L9的一端和线圈L10的一端耦合，线圈L9和线圈L10的耦合端用于接收第二抽头电感中心馈电(VDD2)，线圈L9的另一端与线圈L10的另一端，与上述第二放大器A2和第四放大器A4耦合，线圈L11的一端和线圈L12的一端耦合，线圈L11的另一端通过射频输出端与用于发送射频信号的天线耦合，线圈L12的另一端通过射频输出端与接地端耦合。上述第一接收抽头电感中心馈电，用于提供上述第一放大器A1和第三放大器A3的供电电压，上述第二抽头电感中心馈电，用于提供上述第二放大器A2和第四放大器A4的供电电压。本申请实施例对于输入匹配网络和输出匹配网络的具体类型并不限定。
本申请实施例提供的射频放大电路，通过设置输入匹配网络和输出匹配网络，能够实现上述射频放大电路的输出功率的最大化。
如图16所示，本申请实施例还提供一种射频收发机，该射频收发机包括：发射机和/或接收机，发射机和/或接收机包括依次耦合的射频放大电路和滤波器，射频放大电路为如图12至图15中的射频放大电路。
可选的，上述射频收发机包括发射机，该发射机包括的射频放大电路为第一射频放大电路、滤波器为第一滤波器，第一射频放大电路的射频输出端与第一滤波器的输入端耦合。
可选的，上述发射机还包括第一基带处理电路和上变频电路。其中，上变频电路的输出端与第一射频放大电路的射频输入端耦合，上变频电路的输入端与第一基带处理电路的输出端耦合。
可选的，射频收发机包括接收机，接收机包括的射频放大电路为第二射频放大电路、滤波器为第二滤波器，第二滤波器的输出端与第二射频放大电路的射频输入端耦合。
可选的，上述接收机还包括下变频电路和第二基带处理电路，下变频电路的输入端与第二射频放大电路的射频输出端耦合，下变频电路的输出端与第二基带处理电路的输入端耦合。
可选的，上述第一基带处理电路和第二基带处理电路可以为同一个基带处理电路。
如图17所示，本申请实施例还提供一种通信设备，该通信设备包括天线、以及与该天线耦合的射频收发机，上述天线用于发射和接收射频信号，上述射频收发机为如图16所示的收发机。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何在本申请揭露的技术范围内的变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (14)

  1. 一种射频放大电路，其特征在于，所述射频放大电路包括射频输入端和射频输出端、以及设置在所述射频输入端和所述射频输出端之间的至少两个传输通路，所述至少两个传输通路包括第一传输通路和第二传输通路，所述第一传输通路包括依次耦合的第一放大器、第一线圈、第二线圈和第二放大器，所述第二传输通路包括依次耦合的第三放大器、第三线圈、第四线圈和第四放大器；
    其中，所述第一线圈、所述第二线圈、所述第三线圈和所述第四线圈中的任意两个线圈磁耦合；所述第一放大器和所述第二放大器的导通或关断可调，或者，所述第三放大器和所述第四放大器的导通或关断可调。
  2. 根据权利要求1所述的射频放大电路，其特征在于，当所述第一传输通路和所述第二传输通路中的任一传输通路导通时，所述射频放大电路用于放大第一射频信号；
    当所述第一传输通路和所述第二传输通路均导通时，所述射频放大电路用于放大第二射频信号，所述第一射频信号的频率高于所述第二射频信号的频率。
  3. 根据权利要求2所述的射频放大电路，其特征在于，所述第一线圈的感值和所述第三线圈的感值相等，所述第二线圈的感值和所述第四线圈的感值相等。
  4. 根据权利要求1-3中任一项所述的射频放大电路，其特征在于，所述第一线圈和所述第二线圈之间的互感，与所述第三线圈和所述第四线圈之间的互感相等；和/或，
    所述第一线圈和所述第三线圈的互感，与所述第二线圈和所述第四线圈的互感相等；和/或，
    所述第一线圈与第四线圈之间的互感，与所述第二线圈和所述第三线圈的互感相等。
  5. 根据权利要求1-4任一项所述的射频放大电路，其特征在于，所述第一放大器和所述第三放大器为放大倍数相同的放大器，所述第二放大器和所述第四放大器为放大倍数相同的放大器。
  6. 根据权利要求5所述的射频放大电路，其特征在于，所述至少两个传输通路还包括：第三传输通路，所述第三传输通路包括第五放大器、第五线圈、第六线圈和第六放大器，所述第一线圈、所述第二线圈、所述第三线圈、所述第四线圈、所述第五线圈和所述第六线圈中的任意两个线圈磁耦合。
  7. 根据权利要求6所述的射频放大电路，其特征在于，所述第一线圈、所述第二线圈、所述第三线圈、所述第四线圈、所述第五线圈和所述第六线圈，对称设置在至少一个布线层中。
  8. 根据权利要求1-7任一项所述的射频放大电路，其特征在于，所述射频放大电路还包括输入匹配网络和输出匹配网络，所述输入匹配网络耦合在所述射频输入端与所述至少两个传输通路之间，所述输出匹配网络耦合在所述至少两个传输通路与所述射频输出端之间。
  9. 一种射频收发机，其特征在于，所述射频收发机包括：发射机和/或接收机；所述发射机和/或接收机包括依次耦合的射频放大电路和滤波器，所述射频放大电路为如权利要求1-8中任一项所述的射频放大电路。
  10. 根据权利要求9所述的射频收发机，其特征在于，所述射频收发机包括发射机，所述发射机包括的所述射频放大电路为第一射频放大电路、所述滤波器为第一滤波器，所述第一射频放大电路的输出端与所述第一滤波器的输入端耦合。
  11. 根据权利要求10所述的射频收发机，其特征在于，所述发射机还包括第一基带处理电路和上变频电路，所述上变频电路的输出端与所述第一射频放大电路的输入端耦合，所述上变频电路的输入端与所述第一基带处理电路的输出端耦合。
  12. 根据权利要求9-11中任一项所述的射频收发机，其特征在于，所述射频收发机包括接收机，所述接收机包括的所述射频放大电路为第二射频放大电路、所述滤波器为第二滤波器，所述第二滤波器的输出端与所述第二射频放大电路的输入端耦合。
  13. 根据权利要求12所述的射频收发机，其特征在于，所述接收机还包括下变频电路和第二基带处理电路，所述下变频电路的输入端与所述第二射频放大电路的输出端耦合，所述下变频电路的输出端与所述第二基带处理电路的输入端耦合。
  14. 一种通信设备，其特征在于，所述通信设备包括天线、以及与所述天线耦合的射频收发机，所述天线用于发射或接收射频信号，所述射频收发机为如权利要求9-13中任一项所述的射频收发机。
PCT/CN2023/093669 2022-05-23 2023-05-11 一种射频放大电路、射频收发机及通信设备 WO2023226784A1 (zh)

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