WO2023134313A1

WO2023134313A1 - Megasonic cleaning system for large-sized wafer

Info

Publication number: WO2023134313A1
Application number: PCT/CN2022/134700
Authority: WO
Inventors: 咸威; 咸寿荣
Original assignee: 北京东方金荣超声电器有限公司
Priority date: 2022-01-11
Filing date: 2022-11-28
Publication date: 2023-07-20
Also published as: CN114054429A; CN114054429B

Abstract

The present application relates to the technical field of semiconductor cleaning, and provides a megasonic cleaning system for a large-sized wafer, comprising: a seat body; a rotating seat, which is rotatably arranged on the seat body; an oscillator, which is connected to the rotating seat; a first driving mechanism, which is used for driving the rotating seat to rotate; a transducer apparatus, which is used for carrying out acoustoelectric conversion and which is connected to the oscillator; a second driving mechanism, which is used for connecting to a first end face of the wafer and driving the wafer to rotate, wherein the second driving mechanism is arranged opposite to the oscillator so that a second end face of the wafer faces the oscillator and is opposite to an operating trajectory of the transducer apparatus; a liquid conveying mechanism, which is provided with a liquid outlet that faces the oscillator; and a control assembly, which is connected to the transducer apparatus and is used for controlling the magnitude of sound energy emitted by the transducer apparatus so as to subject the wafer to uniform sound wave energy. The wafer is scanned in a rotating and moving mode, the size of the transducer apparatus does not need to match that of the wafer, and the fabrication difficulty of a piezoelectric ceramic piece may be reduced.

Description

大尺寸晶圆兆声清洗***Large size wafer megasonic cleaning system

相关申请的交叉引用Cross References to Related Applications

本申请要求于2022年01月11日提交的申请号为202210024372.2，名称为“大尺寸晶圆兆声清洗***”的中国专利申请的优先权，其通过引用方式全部并入本文。This application claims the priority of the Chinese patent application with application number 202210024372.2 and titled "Large-Sized Wafer Megasonic Cleaning System" filed on January 11, 2022, which is incorporated herein by reference in its entirety.

技术领域technical field

本申请涉及半导体清洗技术领域，尤其涉及一种大尺寸晶圆兆声清洗***。The present application relates to the technical field of semiconductor cleaning, in particular to a megasonic cleaning system for large-sized wafers.

背景技术Background technique

超声波清洗技术是最为常用的工业清洗技术之一，传统的超声波清洗技术是通过20kHz-100kHz的超声波在液体中产生的空化作用，对物体表面的污渍进行去除而达到清洗的目的。但超声波空化作用过强会对物体表面造成一定损伤，如在半导体器件、光学精密件等精密元器件的清洗中，由于器件表面有微结构，传统高频超声波清洗会对其表面造成损坏。另外，超声频率越高，清洗的杂质颗粒粒径越小，最高频率100kHz的传统超声波清洗很难清洗1微米以下的杂质颗粒。Ultrasonic cleaning technology is one of the most commonly used industrial cleaning technologies. Traditional ultrasonic cleaning technology achieves the purpose of cleaning by removing stains on the surface of objects through the cavitation effect of 20kHz-100kHz ultrasonic waves in liquids. However, excessive ultrasonic cavitation will cause certain damage to the surface of the object. For example, in the cleaning of precision components such as semiconductor devices and optical precision parts, due to the microstructure on the surface of the device, traditional high-frequency ultrasonic cleaning will cause damage to the surface. In addition, the higher the ultrasonic frequency, the smaller the particle size of the cleaned impurity particles. Traditional ultrasonic cleaning with a maximum frequency of 100kHz is difficult to clean impurity particles below 1 micron.

频率高于400kHz的超声波在液体中传播时，能使被清洗件表面附近形成速度梯度很大且极薄的声学边界层，其杂质粒子受到液体兆赫频的震荡作用从器件表面脱落，能够清洗掉元器件表面微米、亚微米级的杂质颗粒，实现超精密清洗过程。此外，高频超声波清洗过程由于极低的空化效应，对被清洗件表面不会产生损伤，能够有效解决精密元器件清洗后造成的腐蚀或损伤破坏等现象。所以能发射兆赫兹级别的兆声装置被广泛应用于半导体制造领域，并且除了有清洗作用外，还可以在化学机械抛光、显影、除胶、金属剥离、刻蚀等关键工艺中起到重要作用。When the ultrasonic wave with a frequency higher than 400kHz propagates in the liquid, it can form a very thin acoustic boundary layer with a large velocity gradient near the surface of the object to be cleaned, and its impurity particles will fall off from the surface of the device under the vibration of the megahertz frequency of the liquid and can be cleaned. Micron and submicron impurity particles on the surface of components realize ultra-precision cleaning process. In addition, due to the extremely low cavitation effect, the high-frequency ultrasonic cleaning process will not cause damage to the surface of the cleaned parts, and can effectively solve the corrosion or damage caused by cleaning precision components. Therefore, megasonic devices capable of emitting megahertz levels are widely used in the field of semiconductor manufacturing, and in addition to cleaning, they can also play an important role in key processes such as chemical mechanical polishing, development, adhesive removal, metal stripping, and etching. .

现有的兆声清洗技术主要分为槽式、喷淋式、贴合式三种。槽式与传统超声波清洗相似，将兆声发射装置置于水槽底部，清洗时晶圆放置在水槽中。该种方式的缺陷是晶圆表面接收到的兆声声场从下到上是逐渐减弱的，分布不均匀而清洗效果受到影响，另外清洗液在槽中容易二次污染。喷淋式是将兆声发射器做成喷嘴形式，兆声随着水流下落到晶圆上，相对于放置在处理槽底部的槽式兆声装置有更高的声传输效率，并可避免二次污染。但缺陷是兆声发生器距离晶圆较远，声能传输效率依然受损，且需要大流量的清洗液才可以工作，清洗液浪费很多。The existing megasonic cleaning technology is mainly divided into three types: tank type, spray type, and bonding type. The tank type is similar to traditional ultrasonic cleaning. The megasonic emission device is placed at the bottom of the tank, and the wafer is placed in the tank during cleaning. The disadvantage of this method is that the megasonic sound field received by the wafer surface gradually weakens from bottom to top, the distribution is uneven and the cleaning effect is affected, and the cleaning liquid is easy to be polluted twice in the tank. The spray type is to make the megasonic emitter into a nozzle form, and the megasonic falls on the wafer with the water flow, which has higher sound transmission efficiency than the trough-type megasonic device placed at the bottom of the processing tank, and can avoid secondary secondary pollution. But the disadvantage is that the megasonic generator is far away from the wafer, the transmission efficiency of the acoustic energy is still impaired, and a large flow of cleaning fluid is required to work, and a lot of cleaning fluid is wasted.

贴合式是目前现有技术中最优化的方式，参考图1所示，通常将兆声发射装置2’靠近于晶圆1’表面，且二者之间留有间隙。清洗过程中，兆声装置固定不动，晶圆旋转，由供液装置3’不断向晶圆输送清洗液。由于兆声发射面与晶圆很近，所以能量传输效率很高，兆声发射面的功率密度只需要2W/cm ²即可达到效果，而喷淋式和槽式兆声装置通常需要5W/cm ²甚至更高的功率密度。另外贴合式仅需要很少的清洗液即可完成清洗，相比另外两种方式可大大节省清洗液的使用。由于从晶圆的中心至边缘的方向，晶圆的线速度线性增大，为了使晶圆旋转时整个晶圆面获得的声场是均匀的，兆声发射装置可通过制成扇形结构的兆声装置实现，这样保证在晶圆旋转时边缘向圆心收到的兆声能量线性减弱，从而获得正面均匀的声能。 The bonding method is the most optimized method in the prior art. Referring to FIG. 1 , the megasonic emission device 2 ′ is usually placed close to the surface of the wafer 1 ′, with a gap between them. During the cleaning process, the megasonic device is fixed, the wafer rotates, and the cleaning liquid is continuously delivered to the wafer by the liquid supply device 3 ′. Because the megasonic emitting surface is very close to the wafer, the energy transmission efficiency is very high. The power density of the megasonic emitting surface only needs 2W/cm ² to achieve the effect, while the spray and slot megasonic devices usually need 5W/cm2 cm ² or even higher power densities. In addition, the bonding type only needs a small amount of cleaning solution to complete the cleaning, which can greatly save the use of cleaning solution compared with the other two methods. Since the linear speed of the wafer increases linearly from the center to the edge of the wafer, in order to make the sound field obtained by the entire wafer surface uniform when the wafer rotates, the megasonic emission device can be made into a fan-shaped megasonic The device realizes that when the wafer is rotated, the megasonic energy received from the edge to the center of the circle is linearly weakened, thereby obtaining uniform acoustic energy on the front.

但该技术的缺陷在于兆声发射面的大小需要和晶圆的大小相匹配，这就要求兆声发射装置中的压电陶瓷片大小和所要清洗的晶圆大小相匹配，晶圆越大，所需要的压电陶瓷片越大。例如一个12寸晶圆，传统方法通常是制作一个半径为6寸，圆心角度为30度以上的扇形压电陶瓷片，这个尺寸的压电陶瓷制作难度很大，所以实际应用中也会分成两块陶瓷片拼接来进行，而这样会有接缝，造成声场不均匀。而随着技术的发展，晶圆尺寸还再不断扩大，如14、16、20寸以上的晶圆，这使得该种方法更很难由单个扇形陶瓷片实现，必须多个陶瓷片拼接，拼接越多接缝越多，从而发射的声能场均匀性越差。或者只能通过较小的陶瓷片制作兆声清洗装置，通常为圆形，然后与喷淋式类似，兆声发射装置运动来扫描实现整面处理，但这样就无法保证在晶圆旋转时得到整面均匀的兆声声场，并且使用面积小的兆声装置清洗效率也会下降。But the defect of this technology is that the size of the megasonic emission surface needs to match the size of the wafer, which requires the size of the piezoelectric ceramic sheet in the megasonic emission device to match the size of the wafer to be cleaned. The larger the wafer, the larger the wafer. The larger the piezoceramic sheet required. For example, for a 12-inch wafer, the traditional method is to make a fan-shaped piezoelectric ceramic sheet with a radius of 6 inches and a center angle of more than 30 degrees. It is very difficult to manufacture piezoelectric ceramics of this size, so it will be divided into two parts in practical applications. It is carried out by splicing ceramic pieces together, and there will be seams in this way, resulting in uneven sound field. With the development of technology, the size of wafers continues to expand, such as wafers above 14, 16, and 20 inches, which makes it more difficult for this method to be realized by a single fan-shaped ceramic sheet, and multiple ceramic sheets must be spliced. The more seams, the worse the uniformity of the emitted acoustic energy field. Or you can only make a megasonic cleaning device through a smaller ceramic sheet, usually circular, and then similar to the spray type, the megasonic emission device moves to scan to achieve the entire surface treatment, but this cannot guarantee that the wafer will be rotated. The megasonic sound field is uniform on the entire surface, and the cleaning efficiency of the megasonic device with a small area will also decrease.

发明内容Contents of the invention

本申请提供一种大尺寸晶圆兆声清洗***，用以解决现有技术中压电陶瓷片受到晶圆尺寸的限制，需要随晶圆尺寸的增大而增大的缺陷，实现在节省清洗液以及保证在清洗时晶圆上的兆声声场分布均匀的前提下，使用较小的压电陶瓷片便可以处理大尺寸的晶圆的效果。This application provides a megasonic cleaning system for large-sized wafers, which is used to solve the problem that the piezoelectric ceramic sheet in the prior art is limited by the size of the wafer and needs to increase with the increase of the wafer size, so as to save cleaning time. On the premise of ensuring uniform distribution of the megasonic sound field on the wafer during cleaning, the use of smaller piezoelectric ceramic sheets can process large-sized wafers.

本申请提供的一种大尺寸晶圆兆声清洗***，包括：A megasonic cleaning system for large-sized wafers provided by the application includes:

座体；body;

转动座，可转动地设置于所述座体上；a rotating seat, rotatably arranged on the seat body;

振荡器，与所述转动座连接并随所述转动座转动；an oscillator connected to the rotating base and rotating with the rotating base;

第一驱动机构，与所述转动座传动连接并用于驱动所述转动座转动；The first drive mechanism is connected to the rotating base and is used to drive the rotating base to rotate;

换能装置，用于将电能转换为声能，且与所述振荡器连接；a transducing device for converting electrical energy into acoustic energy and connected to the oscillator;

第二驱动机构，用于与晶圆的第一端面连接并驱动所述晶圆转动，所述第二驱动机构与所述振荡器相对设置，以使所述晶圆的第二端面朝向所述振荡器并与所述换能装置的运行轨迹相对；The second driving mechanism is used to connect with the first end surface of the wafer and drive the wafer to rotate, the second driving mechanism is arranged opposite to the oscillator, so that the second end surface of the wafer faces the The oscillator is opposite to the running track of the transducer device;

液体输送机构，设置有用于排出清洗液的排液口，所述排液口朝向所述振荡器；The liquid delivery mechanism is provided with a liquid discharge port for discharging the cleaning liquid, and the liquid discharge port faces the oscillator;

控制组件，与所述换能装置连接并用于控制所述换能装置发射的声能大小；a control component, connected to the transducer device and used to control the magnitude of the sound energy emitted by the transducer device;

其中，在所述换能装置沿所述晶圆的外周侧向圆心运行时，所述控制组件控制所述换能装置发射的声能逐渐减小，和/或在所述换能装置沿所述晶圆的圆心向外周侧运行时，所述控制组件控制所述换能装置发射的声能逐渐增大。Wherein, when the energy conversion device moves toward the center of the circle along the outer circumference of the wafer, the control component controls the sound energy emitted by the energy conversion device to gradually decrease, and/or when the energy conversion device moves along the wafer When the center of the wafer moves toward the outer peripheral side, the control component controls the sound energy emitted by the transducer device to gradually increase.

根据本申请提供的一种大尺寸晶圆兆声清洗***，所述控制组件包括能够将电能转化为声能的第一能量转换器和能够将声能转化为电能的第二能量转换器；According to a megasonic cleaning system for large-sized wafers provided by the present application, the control component includes a first energy converter capable of converting electrical energy into acoustic energy and a second energy converter capable of converting acoustic energy into electrical energy;

所述第一能量转换器包括声波发射部，所述第二能量转换器包括声波接收部，所述第一能量转换器设置于所述座体，所述第二能量转换器设置于所述转动座并与所述换能装置电连接，所述声波接收部与所述声波发射部能够在相对状态和错开状态之间进行切换；The first energy converter includes an acoustic wave emitting part, the second energy converter includes an acoustic wave receiving part, the first energy converter is arranged on the base body, and the second energy converter is arranged on the rotating seat and is electrically connected with the transducer device, the sound wave receiving part and the sound wave emitting part can be switched between a relative state and a staggered state;

在所述换能装置沿所述晶圆的外周侧向圆心运行时，所述声波发射部与所述声波接收部的重合范围逐渐减小，和/或在所述换能装置沿所述晶圆的圆心向外周侧运行时，所述声波发射部和所述声波接收部的重合范围逐渐增大。When the transducer moves toward the center of the circle along the outer periphery of the wafer, the overlapping range of the sound wave emitting part and the sound wave receiving part gradually decreases, and/or when the transducer moves along the wafer When the center of the circle moves toward the outer peripheral side, the overlapping range of the sound wave emitting part and the sound wave receiving part gradually increases.

根据本申请提供的一种大尺寸晶圆兆声清洗***，所述座体上设有供所述转动座的第一端伸入的腔体结构，所述腔体结构用于容纳传导介质；According to a megasonic cleaning system for large-sized wafers provided by the present application, the base body is provided with a cavity structure into which the first end of the rotating base extends, and the cavity structure is used to accommodate a conductive medium;

所述第一能量转换器设置于所述腔体结构内；The first energy converter is disposed in the cavity structure;

所述第二能量转换器设置于所述转动座的第一端。The second energy converter is arranged at the first end of the rotating base.

根据本申请提供的一种大尺寸晶圆兆声清洗***，所述第一能量转换器包括沿所述转动座的转动轴线的周向依次分布的多个所述声波发射部，所述第二能量转换器包括沿所述转动座的转动轴线的周向依次分布的多个所述声波接收部，所述第二驱动机构的数量为多个，所述声波发射部的数量、所述声波接收部的数量及所述换能装置的数量均与所述第二驱动机构的数量相同；According to a megasonic cleaning system for large-sized wafers provided by the present application, the first energy converter includes a plurality of acoustic wave emitting parts distributed sequentially along the circumference of the rotation axis of the turntable, and the second The energy converter includes a plurality of sound wave receiving parts sequentially distributed along the circumferential direction of the rotation axis of the rotating seat, the number of the second driving mechanism is multiple, the number of the sound wave emitting parts, the sound wave receiving parts The number of parts and the number of the transducers are the same as the number of the second driving mechanism;

任意相邻的两个所述声波发射部之间设有间隔空间；An interval space is provided between any two adjacent sound wave emitting parts;

在所述换能装置在运行至与所述晶圆的圆心相对时，所述声波接收部与两个所述声波发射部之间的间隔空间相对，在所述换能装置运行至与所述晶圆的外周侧相对时，所述声波接收部与所述声波发射部相对。When the energy-transforming device runs to be opposite to the center of the wafer, the sound wave receiving part is opposite to the space between the two sound-wave emitting parts; When the outer peripheral sides of the wafer face each other, the sound wave receiving part is opposite to the sound wave emitting part.

根据本申请提供的一种大尺寸晶圆兆声清洗***，所述第二驱动机构、所述第一能量转换器和所述第二能量转换器均设置为多个，所述换能装置与所述第二能量转换器数量相同且一一对应地连接，所述第二驱动机构的数量与所述第一能量转换器的数量相同；According to a megasonic cleaning system for large-sized wafers provided by the present application, the second drive mechanism, the first energy converter, and the second energy converter are provided in multiples, and the energy conversion device and The number of the second energy converters is the same and connected in one-to-one correspondence, and the number of the second drive mechanism is the same as the number of the first energy converters;

所述声波发射部的中部分别通过斜面与两个端部相连接，且在沿端部至中部的方向上，各个斜面均向内倾斜；The middle part of the sound wave emitting part is respectively connected to the two ends through inclined planes, and in the direction from the end part to the middle part, each inclined plane is inclined inward;

其中，在所述换能装置运行至与所述晶圆的圆心相对时，与所述换能装置对应的所述声波接收部与所述声波发射部的中部相对，在所述换能装置运行至与所述晶圆的外周侧相对时，与所述换能装置对应的所述声波接收部与所述声波发射部的端部相对。Wherein, when the transducing device operates to be opposite to the center of the wafer, the acoustic wave receiving part corresponding to the transducing device is opposite to the middle part of the acoustic wave emitting part, and when the transducing device operates When facing the outer peripheral side of the wafer, the sound wave receiving part corresponding to the transducer device is opposite to the end part of the sound wave emitting part.

根据本申请提供的一种大尺寸晶圆兆声清洗***，所述声波接收部设置于所述转动座的第一端的端面，且所述声波发射部设置于所述腔体结构的内部的底面。According to a megasonic cleaning system for large-sized wafers provided by the present application, the sound wave receiving part is arranged on the end surface of the first end of the turntable, and the sound wave emitting part is arranged inside the cavity structure bottom surface.

根据本申请提供的一种大尺寸晶圆兆声清洗***，所述声波接收部设置于所述转动座的第一端的外周面，且所述声波发射部设置于所述腔体结构的内周面。According to a megasonic cleaning system for large-sized wafers provided by the present application, the sound wave receiving part is arranged on the outer peripheral surface of the first end of the turntable, and the sound wave emitting part is arranged inside the cavity structure Zhou Mian.

根据本申请提供的一种大尺寸晶圆兆声清洗***，所述换能装置包括第三能量转换器，所述第三能量转换器与所述第二能量转换器电连接，所述第三能量转换器设有用于发射声波的发射面；According to a megasonic cleaning system for large-sized wafers provided by the present application, the energy conversion device includes a third energy converter, the third energy converter is electrically connected to the second energy converter, and the third energy converter is electrically connected to the second energy converter. The energy converter is provided with an emitting surface for emitting sound waves;

所述声波发射部的总面积设置为所述发射面的总面积的1/5-1/10。The total area of the sound wave emitting portion is set to be 1/5-1/10 of the total area of the emitting surface.

根据本申请提供的一种大尺寸晶圆兆声清洗***，还包括清洗槽，所述振荡器设置为圆形结构；According to a megasonic cleaning system for large-sized wafers provided by the present application, it also includes a cleaning tank, and the oscillator is arranged in a circular structure;

所述清洗槽设置为环形槽，并且所述清洗槽的槽口与所述振荡器的外边沿相对。The cleaning tank is arranged as an annular tank, and the notch of the cleaning tank is opposite to the outer edge of the oscillator.

根据本申请提供的一种大尺寸晶圆兆声清洗***，所述第二驱动机构的数量为多个，多个所述第二驱动机构沿所述转动座的转动轴线的轴向依次分布。According to a megasonic cleaning system for large-sized wafers provided in the present application, there are multiple second drive mechanisms, and the multiple second drive mechanisms are distributed sequentially along the axial direction of the rotation axis of the turntable.

本申请提供的大尺寸晶圆兆声清洗***通过第一驱动机构驱动转动座转动，从而使换能装置的运行轨迹经过晶圆的待清洁面，同时第二驱动机构驱动晶圆转动与第一驱动机构配合，使得换能装置能够扫描整个晶圆的待清洁面。如此，通过旋转移动的方式扫描晶圆，换能装置的尺寸不再需要跟晶圆的尺寸相匹配，从而降低换能装置内的压电陶瓷片的制造难度。The large-size wafer megasonic cleaning system provided by this application drives the rotating base to rotate through the first driving mechanism, so that the running track of the transducer device passes the surface to be cleaned of the wafer, and at the same time, the second driving mechanism drives the wafer to rotate with the first The driving mechanism cooperates so that the energy-transforming device can scan the surface to be cleaned of the entire wafer. In this way, by scanning the wafer in a rotating manner, the size of the transducer device no longer needs to match the size of the wafer, thereby reducing the difficulty of manufacturing the piezoelectric ceramic sheet in the transducer device.

同时，本申请提供的大尺寸晶圆兆声清洗***，在对晶圆进行清洗的过程中，通过转动座带动换能装置转动，同时第二驱动机构驱动晶圆转动。当换能装置运行至晶圆的外周侧时，由于晶圆的外周侧的线速度较高，需要较高的声能进行清洗，此时控制组件控制换能装置发射的声能增大，当换能装置运行至晶圆的圆心时，由于晶圆的圆心的线速度较低，无需很高的声能进行清洗，此时控制组件控制换能装置发射的声能减小，从而使得晶圆的待清洁面受到的声波能量是均匀的，从而提高晶圆的清洁效果，并避免晶圆受到过大能量而损坏，同时能够节约能源。At the same time, in the megasonic cleaning system for large-sized wafers provided by the present application, during the process of cleaning the wafers, the rotating seat drives the energy conversion device to rotate, and at the same time, the second driving mechanism drives the wafers to rotate. When the transducer device moves to the outer peripheral side of the wafer, because the linear velocity of the outer peripheral side of the wafer is higher, higher acoustic energy is required for cleaning. At this time, the control component controls the acoustic energy emitted by the transducer device to increase. When the transducer device runs to the center of the wafer, because the linear velocity of the center of the wafer is low, it does not need high sound energy for cleaning. At this time, the control component controls the sound energy emitted by the transducer device to decrease, so that the wafer The acoustic wave energy received by the surface to be cleaned is uniform, thereby improving the cleaning effect of the wafer, avoiding damage to the wafer due to excessive energy, and saving energy at the same time.

附图说明Description of drawings

为了更清楚地说明本申请或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in this application or the prior art, the accompanying drawings that need to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the accompanying drawings in the following description are the present For some embodiments of the application, those skilled in the art can also obtain other drawings based on these drawings without creative work.

图1是现有技术中的大尺寸晶圆兆声清洗***的结构示意图；Fig. 1 is the structural representation of the large-scale wafer megasonic cleaning system in the prior art;

图2是本申请提供的大尺寸晶圆兆声清洗***的原理示意图；Fig. 2 is the schematic diagram of the principle of the large-size wafer megasonic cleaning system provided by the present application;

图3是本申请提供的实施例中的大尺寸晶圆兆声清洗***的结构示意图；FIG. 3 is a schematic structural view of a large-size wafer megasonic cleaning system in an embodiment provided by the present application;

图4是本申请提供的第一种实施例中的大尺寸晶圆兆声清洗***的结构示意图；FIG. 4 is a schematic structural view of the large-size wafer megasonic cleaning system in the first embodiment provided by the present application;

图5是本申请提供的第一种实施例中的第一能量转换器的结构示意图；Fig. 5 is a schematic structural diagram of the first energy converter in the first embodiment provided by the present application;

图6是本申请提供的第一种实施例中的第二能量转换器的结构示意图；Fig. 6 is a schematic structural diagram of the second energy converter in the first embodiment provided by the present application;

图7是本申请提供的第一种实施例中的大尺寸晶圆兆声清洗***的运行原理图；FIG. 7 is a schematic diagram of the operation of the large-size wafer megasonic cleaning system in the first embodiment provided by the present application;

图8是本申请提供的第二种实施例中的大尺寸晶圆兆声清洗***的结构示意图；FIG. 8 is a schematic structural diagram of a large-size wafer megasonic cleaning system in a second embodiment provided by the present application;

图9是本申请提供的第二种实施例中的第一能量转换器的结构示意图；Fig. 9 is a schematic structural diagram of the first energy converter in the second embodiment provided by the present application;

图10是本申请提供的第二种实施例中的大尺寸晶圆兆声清洗***的运行原理图；FIG. 10 is a schematic diagram of the operation of the large-size wafer megasonic cleaning system in the second embodiment provided by the present application;

图11是本申请提供的第三种实施例中的大尺寸晶圆兆声清洗***的结构示意图；FIG. 11 is a schematic structural diagram of a megasonic cleaning system for large-sized wafers in a third embodiment provided by the present application;

图12是本申请提供的第三种实施例中的第一能量转换器的结构示意图；Fig. 12 is a schematic structural diagram of the first energy converter in the third embodiment provided by the present application;

图13是本申请提供的第三种实施例中的大尺寸晶圆兆声清洗***的运行原理图；FIG. 13 is a schematic diagram of the operating principle of the large-size wafer megasonic cleaning system in the third embodiment provided by the present application;

图14是本申请提供的第二种实施例中的第二能量转换器的结构示意图；Fig. 14 is a schematic structural diagram of the second energy converter in the second embodiment provided by the present application;

图15是本申请提供的第三种实施例中的第二能量转换器的结构示意图；Fig. 15 is a schematic structural diagram of the second energy converter in the third embodiment provided by the present application;

附图标记：Reference signs:

1、座体；2、转动座；3、从动齿轮；4、第一驱动机构；5、晶圆；6、液体输送机构；7、第一能量转换器；8、第二能量转换器；9、腔体结构；10、第一电极；11、第二电极；12、导线；14、斜面；15、振荡器；16、清洗槽；17、第二驱动机构；18、第三能量转换器；19、压电陶瓷片；20、圆形电极；21、方形电极；22、弧形电极。1. Seat body; 2. Rotating seat; 3. Driven gear; 4. First drive mechanism; 5. Wafer; 6. Liquid delivery mechanism; 7. First energy converter; 8. Second energy converter; 9. Cavity structure; 10. First electrode; 11. Second electrode; 12. Wire; 14. Slope; 15. Oscillator; 16. Cleaning tank; 17. Second driving mechanism; 18. Third energy converter ; 19. Piezoelectric ceramic sheet; 20. Round electrode; 21. Square electrode; 22. Arc electrode.

具体实施方式Detailed ways

为使本申请的目的、技术方案和优点更加清楚，下面将结合本申请中的附图，对本申请中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings in this application. Obviously, the described embodiments are part of the embodiments of this application , but not all examples. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

下面结合图2-图15描述本申请的实施例中的大尺寸晶圆兆声清洗***。The megasonic cleaning system for a large-sized wafer in an embodiment of the present application will be described below with reference to FIGS. 2-15 .

具体来说，大尺寸晶圆兆声清洗***包括座体1、转动座2、第一驱动机构4、换能装置、第二驱动机构17、液体输送机构6及控制组件。Specifically, the large-size wafer megasonic cleaning system includes a base body 1, a rotating base 2, a first driving mechanism 4, an energy conversion device, a second driving mechanism 17, a liquid delivery mechanism 6 and a control assembly.

参考图1所示，其中，座体1可以设置为壳体结构。Referring to FIG. 1 , the base 1 can be configured as a shell structure.

转动座2可转动地设置于座体1上。例如，如图4所示，座体1上设置有轴承孔，轴承孔设置有轴承，转动座2套装于轴承内，从而通过轴承与座体1可转动连接。The rotating base 2 is rotatably arranged on the base body 1 . For example, as shown in FIG. 4 , the base body 1 is provided with a bearing hole, the bearing hole is provided with a bearing, and the rotating base 2 is set in the bearing, so as to be rotatably connected with the base body 1 through the bearing.

振荡器15与转动座连接并随转动座转动。例如，振荡器15包括但不限于通过螺钉连接的形式与转动座连接。例如，振荡器可以是石英、蓝宝石或氧化铝材质。The oscillator 15 is connected with the rotating base and rotates with the rotating base. For example, the oscillator 15 includes, but is not limited to, connected to the rotating seat through screw connection. For example, oscillators can be quartz, sapphire, or alumina.

第一驱动机构4用于与转动座2传动连接并驱动转动座2转动。The first driving mechanism 4 is used for transmission connection with the rotating base 2 and driving the rotating base 2 to rotate.

例如，第一驱动机构4可以包括电机。电机安装于座体1上，并且电机的输出轴上套装有驱动齿轮，转动座2上设置有与驱动齿轮相啮合的从动齿轮3，电机通过齿轮传动的方式驱动转动座2转动。For example, the first drive mechanism 4 may comprise a motor. The motor is installed on the base body 1, and the output shaft of the motor is sleeved with a driving gear, and the rotating base 2 is provided with a driven gear 3 meshing with the driving gear, and the motor drives the rotating base 2 to rotate through gear transmission.

换能装置用于将电能转换为声能，并且换能装置与振荡器15连接以随振荡器15转动。The transducer device is used to convert electrical energy into sound energy, and the transducer device is connected with the oscillator 15 so as to rotate with the oscillator 15 .

例如，换能装置包括但不限于通过粘接的形式与振荡器15连接，以将声能传递至振荡器15，使振荡器振动产生超声波或者兆声波，从而对晶圆进行清洗。For example, the energy transducing device includes but is not limited to being connected to the oscillator 15 by bonding, so as to transmit the acoustic energy to the oscillator 15, and make the oscillator vibrate to generate ultrasonic waves or megasonic waves, thereby cleaning the wafer.

第二驱动机构17用于与晶圆的第一端面连接并驱动晶圆转动。第二驱动机构17与振荡器15相对设置，以使晶圆的第二端面，即待清洁面，朝向振荡器并与换能装置的运行轨迹相对。The second driving mechanism 17 is used to connect with the first end surface of the wafer and drive the wafer to rotate. The second drive mechanism 17 is arranged opposite to the oscillator 15, so that the second end surface of the wafer, ie, the surface to be cleaned, faces the oscillator and is opposite to the running track of the transducer device.

进一步地，参考图6、图9及图12所示，晶圆5的圆心与换能装置的运行轨迹相对。Further, referring to Fig. 6, Fig. 9 and Fig. 12, the center of circle of the wafer 5 is opposite to the running track of the transducer device.

可选地，第二驱动机构17可以包括电机和吸盘。吸盘安装于电机的输出轴上并用于吸附晶圆5，电机驱动吸盘带动晶圆5转动。Optionally, the second driving mechanism 17 may include a motor and a suction cup. The suction cup is installed on the output shaft of the motor and is used to absorb the wafer 5 , and the motor drives the suction cup to drive the wafer 5 to rotate.

液体输送机构6设置有用于排出清洗液的排液口。液体输送机构6的排液口朝向振荡器。清洗液一方面能够向晶圆的表面传递由振荡器发射的声能，另一方面能够冲洗晶圆5表面掉落的杂质。The liquid delivery mechanism 6 is provided with a liquid discharge port for discharging cleaning liquid. The discharge port of the liquid delivery mechanism 6 faces the oscillator. On the one hand, the cleaning liquid can transmit the acoustic energy emitted by the oscillator to the surface of the wafer, and on the other hand, it can wash away impurities dropped from the surface of the wafer 5 .

例如，液体输送机构6可以包括液泵和管路。液泵抽取清洗液并通过管路将清洗液驱动至振荡器表面。For example, the liquid delivery mechanism 6 may include a liquid pump and pipelines. A fluid pump draws cleaning fluid and drives it through the tubing to the oscillator face.

控制组件与换能装置连接，并用于控制换能装置发射的声能大小。The control component is connected with the transducer device and is used to control the magnitude of the sound energy emitted by the transducer device.

其中，在换能装置沿晶圆的外周侧向圆心运行时，控制组件控制换能装置发射的声能逐渐减小，和/或在换能装置沿晶圆的圆心向外周侧运行时，控制组件控制换能装置发射的声能逐渐增大。Wherein, when the transducer moves toward the center of the circle along the outer periphery of the wafer, the control component controls the sound energy emitted by the transducer to gradually decrease, and/or when the transducer moves along the center of the wafer toward the outer periphery, the control The component controls the sound energy emitted by the transducing device to gradually increase.

本申请提供的实施例中的大尺寸晶圆兆声清洗***通过第一驱动机构4驱动转动座2转动，从而使换能装置的运行轨迹经过晶圆5的待清洁面，同时第二驱动机构17驱动晶圆5转动与第一驱动机构4配合，使得换能装置能够扫描整个晶圆5的待清洁面。如此，通过旋转移动的方式扫描晶圆5，换能装置的尺寸不再需要跟晶圆5的尺寸相匹配，从而降低换能装置内的压电陶瓷片19的制造难度。The large-size wafer megasonic cleaning system in the embodiment provided by the application drives the rotating base 2 to rotate through the first drive mechanism 4, so that the running track of the transducer device passes the surface to be cleaned of the wafer 5, and the second drive mechanism 17 Drive the wafer 5 to rotate and cooperate with the first driving mechanism 4, so that the energy transducing device can scan the entire surface of the wafer 5 to be cleaned. In this way, by scanning the wafer 5 by rotating and moving, the size of the transducer device no longer needs to match the size of the wafer 5 , thereby reducing the manufacturing difficulty of the piezoelectric ceramic sheet 19 in the transducer device.

同时，本申请提供的实施例中的大尺寸晶圆兆声清洗***，在对晶圆5进行清洗的过程中，通过转动座2带动换能装置转动，同时第二驱动机构17驱动晶圆5转动。当换能装置运行至晶圆5的外周侧时，由于晶圆5的外周侧的线速度较高，需要较高的声能进行清洗，此时控制组件控制换能装置发射的声能增大，当换能装置运行至晶圆5的圆心时，由于晶圆5的圆心的线速度较低，无需很高的声能进行清洗，此时控制组件控制换能装置发射的声能减小，从而使得晶圆5的待清洁面受到的声波能量是均匀的，从而提高晶圆5的清洁效果，并避免晶圆5的局部受到过大能量而损坏，同时能够节约能源。At the same time, in the megasonic cleaning system for large-sized wafers in the embodiment provided by the present application, in the process of cleaning the wafer 5, the rotating seat 2 drives the energy conversion device to rotate, and at the same time, the second driving mechanism 17 drives the wafer 5 turn. When the transducer device moves to the outer peripheral side of the wafer 5, due to the higher linear velocity of the outer peripheral side of the wafer 5, higher acoustic energy is required for cleaning. At this time, the control component controls the acoustic energy emitted by the transducer device to increase , when the transducing device runs to the center of the wafer 5, since the linear velocity of the center of the wafer 5 is relatively low, it does not need high sound energy for cleaning. At this time, the control component controls the acoustic energy emitted by the transducing device to decrease, Therefore, the acoustic wave energy received by the surface to be cleaned of the wafer 5 is uniform, thereby improving the cleaning effect of the wafer 5, avoiding local damage of the wafer 5 due to excessive energy, and saving energy at the same time.

如图2所示，图中阴影部分代表现有技术中扇形结构的换能装置，本申请提供的实施例中的大尺寸晶圆兆声清洗***通过控制组件对换能装置发射的能量进行控制，能够实现与现有技术中扇形结构的换能装置相同的效果，即从晶圆5的外周侧至圆心的方向声波能量逐渐减弱的效果。As shown in Figure 2, the shaded part in the figure represents the fan-shaped energy conversion device in the prior art, and the megasonic cleaning system for large-sized wafers in the embodiment provided by the application controls the energy emitted by the energy conversion device through the control component , can achieve the same effect as the fan-shaped transducer device in the prior art, that is, the effect that the sound wave energy gradually weakens in the direction from the outer peripheral side of the wafer 5 to the center of the circle.

在本申请提供的一些实施例中，控制组件包括能够将电能转化为声能的第一能量转换器7和能够将声能转化为电能的第二能量转换器8。In some embodiments provided in the present application, the control assembly includes a first energy converter 7 capable of converting electrical energy into sound energy and a second energy converter 8 capable of converting sound energy into electrical energy.

第一能量转换器7包括声波发射部，第二能量转换器8包括声波接收部。第一能量转换器7设置于座体1，第二能量转换器8设置于转动座2并与换能装置电连接。转动座转动时，声波接收部与声波发射部能够在相对状态和错开状态进行切换。The first energy converter 7 includes an acoustic wave emitting part, and the second energy converter 8 includes an acoustic wave receiving part. The first energy converter 7 is arranged on the base body 1, and the second energy converter 8 is arranged on the rotating base 2 and is electrically connected with the energy conversion device. When the rotating seat rotates, the sound wave receiving part and the sound wave emitting part can be switched between a relative state and a staggered state.

在换能装置沿晶圆5的外周侧向圆心运行时，声波发射部与声波接收部的重合范围逐渐减小，和/或在换能装置在沿晶圆5的圆心向外周侧运行时，声波发射部和声波接收部的重合范围逐渐增大。When the transducing device runs along the outer peripheral side of the wafer 5 toward the center of the circle, the overlapping range of the acoustic wave emitting part and the acoustic wave receiving part gradually decreases, and/or when the transducing device moves toward the outer peripheral side along the center of the wafer 5, The overlapping range of the sound wave emitting part and the sound wave receiving part increases gradually.

当第一能量转换器7的声波发射部与第二能量转换器8的声波接收部的重合范围增大时，第二能量转换器8能够接收到更多的能量并传输至换能装置，使换能装置能够产生更强的声能。当第一能量转换器7的声波发射部与第二能量转换器8的声波接收部的重合范围减小时，第二能量转换器8接收的能量减小，从而使换能装置产生的声能降低。When the overlapping range of the sound wave emitting part of the first energy converter 7 and the sound wave receiving part of the second energy converter 8 increases, the second energy converter 8 can receive more energy and transmit it to the energy conversion device, so that The transducer device can generate stronger sound energy. When the overlapping range of the sound wave emitting part of the first energy converter 7 and the sound wave receiving part of the second energy converter 8 decreases, the energy received by the second energy converter 8 decreases, thereby reducing the sound energy produced by the transducer device .

如此设置，能够通过第一能量转换器7的声波发射部和第二能量转换器的声波接收部之间的重合面积的变化控制换能装置产生声能的大小，即通过机械及电路结构实现换能装置所发射声能的调整，结构更加稳定可靠。并且，由于第一能量转换器7与第二能量转换器8之间无需设置连接线路，使得第二能量转换器在随转动座2转动时不会受连接线路的限制。So set, can control the size of the sound energy generated by the transducer device through the change of the overlapping area between the sound wave emitting part of the first energy converter 7 and the sound wave receiving part of the second energy converter, that is, realize the conversion through the mechanical and circuit structure. The adjustment of the sound energy emitted by the energy device makes the structure more stable and reliable. Moreover, since there is no need for a connection line between the first energy converter 7 and the second energy converter 8 , the second energy converter will not be limited by the connection line when it rotates with the rotating base 2 .

在本申请提供的一些实施例中，座体1上设有供转动座2的第一端伸入的腔体结构9，腔体结构9用于容纳传导介质。In some embodiments provided in the present application, the seat body 1 is provided with a cavity structure 9 into which the first end of the rotating seat 2 protrudes, and the cavity structure 9 is used to accommodate a conductive medium.

第一能量转换器7设置于腔体结构9内。The first energy converter 7 is disposed in the cavity structure 9 .

第二能量转换器8设置于转动座2的第一端。The second energy converter 8 is disposed on the first end of the rotating base 2 .

传导介质包括但不限于水。Conductive media include, but are not limited to, water.

如此设置，第一能量转换器7通过传导介质与第二能量转换器8进行能量传递，能够降低能量损耗，提高能量传输效率。With such arrangement, the first energy converter 7 can transmit energy with the second energy converter 8 through the conductive medium, which can reduce energy loss and improve energy transmission efficiency.

可选地，腔体结构9上设有供传导介质进入的进液口和供传导介质排出的出液口。Optionally, the cavity structure 9 is provided with a liquid inlet for the conduction medium to enter and a liquid outlet for the conduction medium to discharge.

参考图4-图7所示，在本申请提供的一些实施例中，第一能量转换器 7包括沿转动座2的转动轴线的周向依次分布的多个声波发射部。Referring to Fig. 4-Fig. 7, in some embodiments provided by the present application, the first energy converter 7 includes a plurality of sound wave emitting parts sequentially distributed along the circumferential direction of the rotation axis of the rotating seat 2.

第二能量转换器8包括沿转动座2的转动轴线的周向依次分布的多个声波接收部。The second energy converter 8 includes a plurality of sound wave receiving parts sequentially distributed along the circumferential direction of the rotation axis of the rotating base 2 .

第二驱动机构的数量为多个。声波发射部的数量、声波接收部的数量及换能装置的数量均与第二驱动机构的数量相同。There are multiple second drive mechanisms. The number of sound wave emitting parts, the number of sound wave receiving parts and the number of transducer devices are all the same as the number of the second driving mechanism.

任意相邻的两个声波发射部之间设有间隔空间。An interval space is provided between any two adjacent sound wave emitting parts.

参考图6所示，在换能装置运行至与晶圆5的圆心相对时，声波接收部与两个声波发射器之间的间隔空间相对，在换能装置运行至与晶圆5的外周侧相对时，声波接收部与声波发射部相对。With reference to shown in Fig. 6, when the transducing device runs to the center of circle of wafer 5, the acoustic wave receiver is opposite to the space between the two acoustic wave emitters, and when the transducing device travels to the outer peripheral side of wafer 5 When facing each other, the sound wave receiving part is opposite to the sound wave emitting part.

具体地，参考图6所示，第二能量转化器包括压电陶瓷片19、第二电极11和圆形电极20。压电陶瓷片19的第一端面上设有多个呈扇形结构的第二电极11，任意相邻的两个第二电极11之间设有间隔。压电陶瓷片19第二端面上设有圆形电极20。压电陶瓷片19设有第二电极11的部分构成上述的声波接收部。Specifically, referring to FIG. 6 , the second energy converter includes a piezoelectric ceramic sheet 19 , a second electrode 11 and a circular electrode 20 . A plurality of fan-shaped second electrodes 11 are provided on the first end surface of the piezoelectric ceramic sheet 19 , and a space is provided between any two adjacent second electrodes 11 . A circular electrode 20 is provided on the second end surface of the piezoelectric ceramic sheet 19 . The portion of the piezoelectric ceramic sheet 19 provided with the second electrode 11 constitutes the above-mentioned acoustic wave receiving portion.

进一步地，如图6所示，第二电极11靠近压电陶瓷片19外周侧的一端相互连接且形成包边，包边翻折于压电陶瓷片19的第二端面上，以便于将第二电极11和圆形电极20的引线均设置于第二端面上，从而降低制造难度。Further, as shown in FIG. 6, the ends of the second electrodes 11 close to the outer peripheral side of the piezoelectric ceramic sheet 19 are connected to each other and form a wrapping, and the wrapping is folded over the second end surface of the piezoelectric ceramic sheet 19, so that the second electrode 11 The lead wires of the second electrode 11 and the circular electrode 20 are all arranged on the second end surface, thereby reducing manufacturing difficulty.

压电陶瓷片19具有压电效应，接收声能时，压电陶瓷片19两个端面的电极之间会产生电流，或者向两个端面的电极通入变化的电流时，压电陶瓷片19会产生振动。本文所述的压电陶瓷片均基于此原理进行声电转换，其它部分不再赘述。The piezoelectric ceramic sheet 19 has a piezoelectric effect. When receiving sound energy, a current will be generated between the electrodes on the two end faces of the piezoelectric ceramic sheet 19, or when a changing current is passed to the electrodes on the two end faces, the piezoelectric ceramic sheet 19 will Will vibrate. The piezoelectric ceramic sheets described in this article are all based on this principle to perform acoustic-electric conversion, and other parts will not be repeated.

参考图5所示，第一能量转换器7与第二能量转换器8的结构相同，第一能量转换器7包括压电陶瓷片19、第一电极10和圆形电极20。压电陶瓷片19的第一端面上设有多个呈扇形结构第一电极10，任意相邻的两个第一电极10之间具有间隔。压电陶瓷片19的第二端面上设有圆形电极20。压电陶瓷片19设有第一电极10的部分构成上述声波发射部。第一电极10靠近压电陶瓷片19外周侧的第一端相互连接形成包边，并翻折于压电陶瓷片19的第二端面上。Referring to FIG. 5 , the first energy converter 7 has the same structure as the second energy converter 8 , and the first energy converter 7 includes a piezoelectric ceramic sheet 19 , a first electrode 10 and a circular electrode 20 . A plurality of fan-shaped first electrodes 10 are arranged on the first end surface of the piezoelectric ceramic sheet 19 , and there is an interval between any two adjacent first electrodes 10 . A circular electrode 20 is provided on the second end surface of the piezoelectric ceramic sheet 19 . The portion of the piezoelectric ceramic sheet 19 provided with the first electrode 10 constitutes the above-mentioned acoustic wave emitting portion. The first ends of the first electrodes 10 close to the outer peripheral side of the piezoelectric ceramic sheet 19 are connected to each other to form a wrapping, and folded over the second end surface of the piezoelectric ceramic sheet 19 .

在使用时，第一能量转换器7的第一端面与第二能量转换器8的第一端面相对设置。声波电源，例如兆声电源的输出端分别与第一能量转换器7的第一电极10和圆形电极20相连接，以使兆声电源可向第一能量转换器7输送兆声频率的电能。第一能量转换器7将电能转化为声能从声波发射部发出，并通过传导介质传给第二能量转换器8，第二能量转换器8通过声波接收部接收，并将声能转换为电能通过导线12传递给兆声发射器，兆声发射器将兆声声能发射到晶圆5表面实现清洗。In use, the first end face of the first energy converter 7 is opposite to the first end face of the second energy converter 8. Acoustic power supply, for example, the output end of the megasonic power supply is connected with the first electrode 10 and the circular electrode 20 of the first energy converter 7 respectively, so that the megasonic power supply can deliver the electric energy of the megasonic frequency to the first energy converter 7 . The first energy converter 7 converts electrical energy into sound energy and sends it out from the sound wave emitting part, and transmits it to the second energy converter 8 through a conductive medium, and the second energy converter 8 receives through the sound wave receiving part, and converts the sound energy into electric energy The megasonic emitter transmits the megasonic energy to the surface of the wafer 5 for cleaning through the wire 12 .

如图6所示，当第一能量转换器7的第一电极10与第二能量转换器8的第二电极11相对，第二能量转换器8能够接收更多的声能，第二能量转换器8产生的电流较大，从而使换能装置产生较高的能量输出。当第二能量转换的第二电极11与两个第一电极10之间的间隔空间相对时，第二能量转换器8从第一能量转换器7接收到的声能较少，第二能量转换器8产生的电流较小，从而使换能装置产生较低的能量输出。As shown in Figure 6, when the first electrode 10 of the first energy converter 7 is opposite to the second electrode 11 of the second energy converter 8, the second energy converter 8 can receive more acoustic energy, and the second energy converter The current generated by the device 8 is larger, so that the energy conversion device can generate higher energy output. When the second electrode 11 of the second energy conversion is opposite to the space between the two first electrodes 10, the second energy converter 8 receives less acoustic energy from the first energy converter 7, and the second energy conversion The current generated by the device 8 is relatively small, so that the energy conversion device produces a relatively low energy output.

进一步地，第二驱动机构的数量为多个，因此晶圆5的数量可设置为多个，从而可提高大尺寸晶圆清洗***的清洗效率。换能装置的数量与晶圆5的数量相同，且各个换能装置通过导线12并联于第二能量转换器8的第二电极11与第二能量转换器8的圆形电极20之间。Further, the number of the second driving mechanism is multiple, so the number of wafers 5 can be set multiple, so that the cleaning efficiency of the large-size wafer cleaning system can be improved. The number of transducers is the same as the number of wafers 5 , and each transducer is connected in parallel between the second electrode 11 of the second energy converter 8 and the circular electrode 20 of the second energy converter 8 through wires 12 .

进一步地，第二能量转换器8的直径大于第一能量转换器7的直径，以使第一能量转换器7产生的声能可被第二能量转换器8全部吸收。Further, the diameter of the second energy converter 8 is larger than that of the first energy converter 7 , so that the sound energy generated by the first energy converter 7 can be completely absorbed by the second energy converter 8 .

当然，第一能量转换器7和第二能量转换器8的设置形式并不局限于上述方式。Of course, the arrangement form of the first energy converter 7 and the second energy converter 8 is not limited to the above-mentioned manner.

例如，参考图8-图13所示，在本申请提供的其它实施例中，第一能量转换器7和第二能量转换器8均设置为多个。换能装置与第二能量转换器8数量相同且一一对应地连接。第二驱动机构的数量与第一能量转换器的数量相同。多个第二驱动机构能够同时驱动多个晶圆进行清洗，从而提高晶圆的清洗效率。多个第一能量转换器7和多个第二能量转换器8均沿着转动座2的转动轴线的周向依次排布。For example, as shown in FIG. 8-FIG. 13 , in other embodiments provided in the present application, there are multiple first energy converters 7 and multiple second energy converters 8 . The energy conversion device and the second energy converter 8 have the same number and are connected in a one-to-one correspondence. The number of the second drive mechanisms is the same as the number of the first energy converters. The plurality of second driving mechanisms can simultaneously drive a plurality of wafers for cleaning, thereby improving the cleaning efficiency of the wafers. A plurality of first energy converters 7 and a plurality of second energy converters 8 are sequentially arranged along the circumferential direction of the rotation axis of the rotating seat 2 .

参考图9、图12所示，声波发射部的中部分别通过斜面14与其两个端部相连接，且在沿端部至中部的方向上，各个斜面14均向内倾斜。Referring to Fig. 9 and Fig. 12, the middle part of the sound wave emitting part is connected to its two ends through inclined planes 14, and each inclined plane 14 is inclined inward along the direction from the end part to the middle part.

参考图9、图12所示，可选地，声波发射部的第一个端部通过相对设置的两个斜面14与中部连接，第二个端部也通过相对设置的两个斜面14 与中部连接。Referring to Fig. 9 and Fig. 12, optionally, the first end of the sound wave emitting part is connected to the middle part through two opposite inclined surfaces 14, and the second end is also connected to the middle part through two opposite inclined surfaces 14. connect.

参考图10、图13所示，其中，在换能装置运行至与晶圆5的圆心相对时，与换能装置对应的声波接收部与声波发射部的中部相对，换能装置在运行至与晶圆5的外周侧相对时，与换能装置对应的声波接收部与声波发射部的端部相对。Referring to Fig. 10 and shown in Fig. 13, wherein, when the transducing device runs to be opposite to the center of circle of the wafer 5, the acoustic wave receiving part corresponding to the transducing device is opposite to the middle part of the acoustic wave emitting part, and the transducing device is running to the center of the acoustic wave emitting part. When the outer peripheral sides of the wafer 5 face each other, the sound wave receiving part corresponding to the transducer device is opposite to the end of the sound wave emitting part.

由于第一电极10的中部窄而端部宽，当第二电极11与第一电极10的端部相对时，第二能量转换器8能够接收更多的声能，第二能量转换器8产生的电流较大，从而使换能装置产生较高的能量输出。当第二电极11与第一电极10的中部相对时，第二能量转换器8从第一能量转换器7接收到的声能较少，第二能量转换器8产生的电流较小，从而使换能装置产生较低的能量输出。Because the middle part of the first electrode 10 is narrow and the end is wide, when the second electrode 11 is opposite to the end of the first electrode 10, the second energy converter 8 can receive more acoustic energy, and the second energy converter 8 generates The current is larger, so that the energy conversion device produces a higher energy output. When the second electrode 11 is opposite to the middle of the first electrode 10, the second energy converter 8 receives less acoustic energy from the first energy converter 7, and the second energy converter 8 generates a smaller current, so that The transducing device produces a lower energy output.

参考图8所示，在本申请提供的一些实施例中，声波接收部设置于转动座2的第一端的端面，且声波发射部设置于腔体结构9内部的底面。Referring to FIG. 8 , in some embodiments provided by the present application, the sound wave receiving part is arranged on the end surface of the first end of the rotating seat 2 , and the sound wave emitting part is arranged on the bottom surface inside the cavity structure 9 .

参考图9所示，具体地，第一能量转换器7包括第一电极10、压电陶瓷片19和矩形电极。第一电极10设置于压电陶瓷片19的第一端面，矩形电极设置于压电陶瓷片19的第二端面，并且第一电极10的端部翻折于压电陶瓷片19的第二端面。压电陶瓷片19的第一端面设有第一电极10的部分构成上述的声波发射部。Referring to FIG. 9 , specifically, the first energy converter 7 includes a first electrode 10 , a piezoelectric ceramic sheet 19 and a rectangular electrode. The first electrode 10 is arranged on the first end surface of the piezoelectric ceramic sheet 19, the rectangular electrode is arranged on the second end surface of the piezoelectric ceramic sheet 19, and the end of the first electrode 10 is folded over the second end surface of the piezoelectric ceramic sheet 19 . The portion of the first end surface of the piezoelectric ceramic sheet 19 where the first electrode 10 is disposed constitutes the above-mentioned acoustic wave emitting portion.

参考图14所示，第二能量转换器8包括第二电极11和压电陶瓷片19。压电陶瓷片19的两个端面均设置有第二电极11，第二电极11可以是长条形电极。第二能量转换器8的任一端面设有第二电极的部分均可构成上述的声波接收部。第二电极11的长度大于第一电极10的宽度。Referring to FIG. 14 , the second energy converter 8 includes a second electrode 11 and a piezoelectric ceramic sheet 19 . Both end surfaces of the piezoelectric ceramic sheet 19 are provided with second electrodes 11 , and the second electrodes 11 may be elongated electrodes. The portion of any end surface of the second energy converter 8 provided with the second electrode can constitute the above-mentioned acoustic wave receiving portion. The length of the second electrode 11 is greater than the width of the first electrode 10 .

当然，第二电极11并不局限于设置于转动座2的第一端的端面上。Of course, the second electrode 11 is not limited to be disposed on the end face of the first end of the rotating base 2 .

例如，参考图11所示，在本申请提供的其它实施例中，声波接收部设置于转动座2的第一端的外周面，且声波发射部设置于腔体结构9的内周面。For example, as shown in FIG. 11 , in other embodiments provided by the present application, the sound wave receiving part is disposed on the outer peripheral surface of the first end of the rotating seat 2 , and the sound wave emitting part is disposed on the inner peripheral surface of the cavity structure 9 .

参考图12所示，具体地，第一能量转换器7包括第一电极10、压电陶瓷片19和弧形电极22。压电陶瓷片19设置为弧形结构，第一电极10设置于压电陶瓷片19的内凹面上且朝向腔体结构9，弧形电极22设置于压电陶瓷片19的外凸面上，第一电极10的端部翻折于压电陶瓷片19的外凸面上。压电陶瓷片设有第一电极10的部分构成上述的声波发射部。Referring to FIG. 12 , specifically, the first energy converter 7 includes a first electrode 10 , a piezoelectric ceramic sheet 19 and an arc-shaped electrode 22 . The piezoelectric ceramic sheet 19 is arranged in an arc-shaped structure, the first electrode 10 is arranged on the inner concave surface of the piezoelectric ceramic sheet 19 and faces the cavity structure 9, and the arc-shaped electrode 22 is arranged on the outer convex surface of the piezoelectric ceramic sheet 19. An end of an electrode 10 is folded on the convex surface of the piezoelectric ceramic sheet 19 . The part of the piezoelectric ceramic sheet provided with the first electrode 10 constitutes the above-mentioned acoustic wave emitting part.

参考图15所示，第二能量转换器8包括第二电极11和压电陶瓷片19，压电陶瓷片19的两个端面上均设有第二电极11，第二电极11的长度大于第一电极10的宽度。压电陶瓷片的凸面设有第二电极的部分均可构成上述的声波接收部。Referring to Fig. 15, the second energy converter 8 includes a second electrode 11 and a piezoelectric ceramic sheet 19, the two end faces of the piezoelectric ceramic sheet 19 are provided with a second electrode 11, and the length of the second electrode 11 is longer than that of the first electrode 11. The width of an electrode 10 . The portion of the convex surface of the piezoelectric ceramic sheet provided with the second electrode can constitute the above-mentioned sound wave receiving portion.

在本申请提供的一些实施例中，换能装置包括第三能量转换器18。第三能量转换器18可以通过粘接的形式与振荡器15连接。第三能量转换器18与第二能量转换器8电连接。第三能量转换器设有用于发射声波的发射面。声波发射部的总面积设置为发射面的总面积的1/5-1/10。In some embodiments provided in this application, the energy transducing device includes a third energy converter 18 . The third energy converter 18 can be connected to the oscillator 15 by bonding. The third energy converter 18 is electrically connected to the second energy converter 8 . The third energy converter is provided with an emitting surface for emitting sound waves. The total area of the sound wave emitting part is set to be 1/5-1/10 of the total area of the emitting surface.

为了避免晶圆5表面受到损伤，对晶圆5表面进行清洗时的兆声声功率密度不得过大，一般限制在2-3W/cm ²，在这个范围内既能保证有效清洗，同时不会损坏晶圆5。而压电陶瓷片本身正常的声功率密度可以施加到10-20W/cm ²，但超过20W/cm ²也会对压电陶瓷造成损坏。所以如果本申请中第三能量转换器18的功率密度为2W/cm ²，第一能量转换器7的功率密度可以加载到第三能量转化器的5-10倍。 In order to avoid damage to the surface of the wafer 5, the megasonic power density when cleaning the surface of the wafer 5 must not be too large, generally limited to 2-3W/cm ² , within this range, effective cleaning can be guaranteed without Damage wafer 5. The normal acoustic power density of the piezoelectric ceramic sheet itself can be applied to 10-20W/cm ² , but exceeding 20W/cm ² will also cause damage to the piezoelectric ceramic. Therefore, if the power density of the third energy converter 18 in this application is 2W/cm ² , the power density of the first energy converter 7 can be loaded to 5-10 times that of the third energy converter.

例如，第三能量转换器18可以包括压电陶瓷片和设置在压电陶瓷片两个端面上的电极。压电陶瓷片与振荡器相连接的端面上设有电极的部分构成发射面。第三能量转换器18两个端面的电极与第二能量转换器8的两个端面上的电极电连接，第二能量转换器8向第三能量转化器传输电流，从而利用电流驱动压电陶瓷片19振动。压电陶瓷片19带动振荡器振动，振荡器输出兆声波或超声波清洗晶圆5表面。For example, the third energy converter 18 may include a piezoelectric ceramic sheet and electrodes disposed on both end surfaces of the piezoelectric ceramic sheet. The part where the electrode is provided on the end surface of the piezoelectric ceramic sheet connected with the oscillator constitutes the emitting surface. The electrodes on the two end faces of the third energy converter 18 are electrically connected to the electrodes on the two end faces of the second energy converter 8, and the second energy converter 8 transmits current to the third energy converter, thereby using the current to drive the piezoelectric ceramics Sheet 19 vibrates. The piezoelectric ceramic sheet 19 drives the oscillator to vibrate, and the oscillator outputs megasonic waves or ultrasonic waves to clean the surface of the wafer 5 .

可选地，第一电极10、第二电极11、圆形电极20、方形电极21和弧形电极22均可以设置镍、纯钛或钛合金材质，以防水、防腐蚀。Optionally, the first electrode 10 , the second electrode 11 , the circular electrode 20 , the square electrode 21 and the arc-shaped electrode 22 can all be made of nickel, pure titanium or titanium alloy to prevent water and corrosion.

在本申请提供的一些实施例中，大尺寸晶圆兆声清洗***还包括清洗槽16，振荡器15设置为圆形结构。In some embodiments provided in the present application, the megasonic cleaning system for large-sized wafers further includes a cleaning tank 16, and the oscillator 15 is arranged in a circular structure.

清洗槽16设置为环形槽，并且清洗槽16的槽口与振荡器15的外边沿相对。液体输送机构6喷射的水经过晶圆5与振荡器15之间的间隙流入到环形槽被收集。The cleaning tank 16 is configured as an annular tank, and the notch of the cleaning tank 16 is opposite to the outer edge of the oscillator 15 . The water sprayed by the liquid delivery mechanism 6 flows into the annular groove through the gap between the wafer 5 and the oscillator 15 to be collected.

进一步地，振荡器设置为石英、蓝宝石或者红宝石材质。Further, the oscillator is made of quartz, sapphire or ruby.

在本申请提供的一些实施例中，第二驱动机构17的数量为多个，多个第二驱动机构17沿转动座2的转动轴线的轴向依次分布。如此设置，本申请提供的实施例中的大尺寸晶圆兆声清洗***一次能够清洗多个晶圆5，从而提高晶圆5的清洗效率。In some embodiments provided in the present application, there are multiple second driving mechanisms 17 , and the multiple second driving mechanisms 17 are sequentially distributed along the axial direction of the rotation axis of the rotating base 2 . With such arrangement, the megasonic cleaning system for large-sized wafers in the embodiments provided in this application can clean multiple wafers 5 at a time, thereby improving the cleaning efficiency of wafers 5 .

最后应说明的是：以上实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, rather than limiting them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present application.

Claims

一种大尺寸晶圆兆声清洗***，包括：A megasonic cleaning system for large-sized wafers, comprising:

座体；body;

转动座，可转动地设置于所述座体；a rotating seat, rotatably arranged on the seat body;

振荡器，与所述转动座连接并随所述转动座转动；an oscillator connected to the rotating base and rotating with the rotating base;

第一驱动机构，与所述转动座传动连接并用于驱动所述转动座转动；The first drive mechanism is connected to the rotating seat and used to drive the rotating seat to rotate;

换能装置，用于将电能转换为声能，且与所述振荡器连接；a transducing device for converting electrical energy into acoustic energy and connected to the oscillator;

第二驱动机构，用于与晶圆的第一端面连接并驱动所述晶圆转动，所述第二驱动机构与所述振荡器相对设置，以使所述晶圆的第二端面朝向所述振荡器并与所述换能装置的运行轨迹相对；The second driving mechanism is used to connect with the first end surface of the wafer and drive the wafer to rotate, the second driving mechanism is arranged opposite to the oscillator, so that the second end surface of the wafer faces the The oscillator is opposite to the running track of the transducer device;

液体输送机构，设置有用于排出清洗液的排液口，所述排液口朝向所述振荡器；The liquid delivery mechanism is provided with a liquid discharge port for discharging the cleaning liquid, and the liquid discharge port faces the oscillator;

控制组件，与所述换能装置连接并用于控制所述换能装置发射的声能大小，a control component, connected to the transducer device and used to control the magnitude of the sound energy emitted by the transducer device,

其中，在所述换能装置沿所述晶圆的外周侧向圆心运行时，所述控制组件控制所述换能装置发射的声能逐渐减小，和/或在所述换能装置沿所述晶圆的圆心向外周侧运行时，所述控制组件控制所述换能装置发射的声能逐渐增大。Wherein, when the energy conversion device moves toward the center of the circle along the outer circumference of the wafer, the control component controls the sound energy emitted by the energy conversion device to gradually decrease, and/or when the energy conversion device moves along the wafer When the center of the wafer moves toward the outer peripheral side, the control component controls the sound energy emitted by the transducer device to gradually increase.
根据权利要求1所述的大尺寸晶圆兆声清洗***，其中，所述控制组件包括能够将电能转化为声能的第一能量转换器和能够将声能转化为电能的第二能量转换器；The megasonic cleaning system for large-sized wafers according to claim 1, wherein the control assembly includes a first energy converter capable of converting electrical energy into acoustic energy and a second energy converter capable of converting acoustic energy into electrical energy ;

所述第一能量转换器包括声波发射部，所述第二能量转换器包括声波接收部，所述第一能量转换器设置于所述座体，所述第二能量转换器设置于所述转动座并与所述换能装置电连接，所述声波接收部与所述声波发射部能够在相对状态和错开状态之间切换；The first energy converter includes an acoustic wave emitting part, the second energy converter includes an acoustic wave receiving part, the first energy converter is arranged on the base body, and the second energy converter is arranged on the rotating seat and is electrically connected to the transducer device, the sound wave receiving part and the sound wave emitting part can be switched between a relative state and a staggered state;

在所述换能装置沿所述晶圆的外周侧向圆心运行时，所述声波发射部与所述声波接收部的重合范围逐渐减小，和/或在所述换能装置沿所述晶圆的圆心向外周侧运行时，所述声波发射部和所述声波接收部的重合范围逐渐增大。When the transducer moves toward the center of the circle along the outer periphery of the wafer, the overlapping range of the sound wave emitting part and the sound wave receiving part gradually decreases, and/or when the transducer moves along the wafer When the center of the circle moves toward the outer peripheral side, the overlapping range of the sound wave emitting part and the sound wave receiving part gradually increases.
根据权利要求2所述的大尺寸晶圆兆声清洗***，其中，所述座体上设有供所述转动座的第一端伸入的腔体结构，所述腔体结构用于容纳传导介质；The megasonic cleaning system for large-sized wafers according to claim 2, wherein the base body is provided with a cavity structure into which the first end of the rotating base extends, and the cavity structure is used to accommodate conductive medium;

所述第一能量转换器设置于所述腔体结构内；The first energy converter is arranged in the cavity structure;

所述第二能量转换器设置于所述转动座的第一端。The second energy converter is arranged at the first end of the rotating seat.
根据权利要求3所述的大尺寸晶圆兆声清洗***，其中，所述第一能量转换器包括沿所述转动座的转动轴线的周向依次分布的多个所述声波发射部，所述第二能量转换器包括沿所述转动座的转动轴线的周向依次分布的多个所述声波接收部，所述第二驱动机构的数量为多个，所述声波发射部的数量、所述声波接收部的数量及所述换能装置的数量均与所述第二驱动机构的数量相同；The megasonic cleaning system for large-sized wafers according to claim 3, wherein said first energy converter comprises a plurality of said acoustic wave emitting parts distributed sequentially along the circumferential direction of the rotation axis of said turntable, said The second energy converter includes a plurality of sound wave receiving parts distributed sequentially along the circumferential direction of the rotation axis of the rotating seat, the number of the second driving mechanism is multiple, the number of the sound wave emitting parts, the The number of sound wave receiving parts and the number of the transducer devices are the same as the number of the second driving mechanism;

任意相邻的两个所述声波发射部之间设有间隔空间；An interval space is provided between any two adjacent sound wave emitting parts;

在所述换能装置运行至与所述晶圆的圆心相对时，所述声波接收部与两个所述声波发射部之间的间隔空间相对，在所述换能装置运行至与所述晶圆的外周侧相对时，所述声波接收部与所述声波发射部相对。When the transducing device runs to the center of the wafer, the sound wave receiving part is opposite to the space between the two sound wave emitting parts; When the outer peripheral sides of the circle face each other, the sound wave receiving part is opposite to the sound wave emitting part.
根据权利要求3所述的大尺寸晶圆兆声清洗***，其中，所述第二驱动机构、所述第一能量转换器和所述第二能量转换器均设置为多个，所述换能装置与所述第二能量转换器数量相同且一一对应地连接，所述第二驱动机构的数量与所述第一能量转换器的数量相同；The megasonic cleaning system for large-sized wafers according to claim 3, wherein the second driving mechanism, the first energy converter and the second energy converter are provided in multiples, and the energy conversion The number of devices is the same as that of the second energy converters and they are connected in one-to-one correspondence, and the number of the second drive mechanisms is the same as the number of the first energy converters;

所述声波发射部的中部分别通过斜面与两个端部相连接，且在沿端部至中部的方向上，各个斜面均向内倾斜；The middle part of the sound wave emitting part is respectively connected to the two ends through inclined planes, and in the direction from the end part to the middle part, each inclined plane is inclined inward;

其中，在所述换能装置运行至与所述晶圆的圆心相对时，与所述换能装置对应的所述声波接收部与所述声波发射部的中部相对，在所述换能装置运行至与所述晶圆的外周侧相对时，与所述换能装置对应的所述声波接收部与所述声波发射部的端部相对。Wherein, when the transducing device operates to be opposite to the center of the wafer, the acoustic wave receiving part corresponding to the transducing device is opposite to the middle part of the acoustic wave emitting part, and when the transducing device operates When facing the outer peripheral side of the wafer, the sound wave receiving part corresponding to the transducer device is opposite to the end part of the sound wave emitting part.
根据权利要求5所述的大尺寸晶圆兆声清洗***，其中，所述声波接收部设置于所述转动座的第一端的端面，且所述声波发射部设置于所述腔体结构的内部的底面。The megasonic cleaning system for large-sized wafers according to claim 5, wherein the sound wave receiving part is arranged on the end face of the first end of the turntable, and the sound wave emitting part is arranged on the cavity structure The bottom surface of the interior.
根据权利要求5所述的大尺寸晶圆兆声清洗***，其中，所述声波接收部设置于所述转动座的第一端的外周面，且所述声波发射部设置于所述腔体结构的内周面。The megasonic cleaning system for large-sized wafers according to claim 5, wherein the sound wave receiving part is arranged on the outer peripheral surface of the first end of the turntable, and the sound wave emitting part is arranged on the cavity structure inner peripheral surface.
根据权利要求2-7任一项所述的大尺寸晶圆兆声清洗***，其中，所述换能装置包括第三能量转换器，所述第三能量转换器与所述第二能量转换器电连接，所述第三能量转换器设有用于发射声波的发射面；The megasonic cleaning system for large-sized wafers according to any one of claims 2-7, wherein the energy conversion device includes a third energy converter, and the third energy converter and the second energy converter Electrically connected, the third energy converter is provided with an emitting surface for emitting sound waves;

所述声波发射部的总面积设置为所述发射面的总面积的1/5-1/10。The total area of the sound wave emitting portion is set to be 1/5-1/10 of the total area of the emitting surface.
根据权利要求1-7任一项所述的大尺寸晶圆兆声清洗***，还包括清洗槽，所述振荡器设置为圆形结构；The megasonic cleaning system for large-sized wafers according to any one of claims 1-7, further comprising a cleaning tank, the oscillator is arranged in a circular structure;

所述清洗槽设置为环形槽，并且所述清洗槽的槽口与所述振荡器的外边沿相对。The cleaning tank is arranged as an annular tank, and the notch of the cleaning tank is opposite to the outer edge of the oscillator.
根据权利要求1-7任一项所述的大尺寸晶圆兆声清洗***，其中，所述第二驱动机构的数量为多个，多个所述第二驱动机构沿所述转动座的转动轴线的轴向依次分布。The megasonic cleaning system for large-sized wafers according to any one of claims 1-7, wherein there are multiple second drive mechanisms, and multiple second drive mechanisms rotate along the rotating base The axial direction of the axis is distributed sequentially.