CN114054429B - Megasonic cleaning system for large-size wafer - Google Patents
Megasonic cleaning system for large-size wafer Download PDFInfo
- Publication number
- CN114054429B CN114054429B CN202210024372.2A CN202210024372A CN114054429B CN 114054429 B CN114054429 B CN 114054429B CN 202210024372 A CN202210024372 A CN 202210024372A CN 114054429 B CN114054429 B CN 114054429B
- Authority
- CN
- China
- Prior art keywords
- energy
- wafer
- conversion device
- energy converter
- oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention relates to the technical field of semiconductor cleaning, and provides a megasonic cleaning system for a large-size wafer, which comprises: a base body; the rotating seat is rotatably arranged on the seat body; the oscillator is connected with the rotating seat; the first driving mechanism is used for driving the rotating seat to rotate; the energy conversion device is used for performing sound-electricity conversion and is connected with the oscillator; the second driving mechanism is used for being connected with the first end face of the wafer and driving the wafer to rotate, and the second driving mechanism is arranged opposite to the oscillator so that the second end face of the wafer faces the oscillator and is opposite to the running track of the energy conversion device; the liquid conveying mechanism is provided with a liquid outlet, and the liquid outlet faces the oscillator; and the control component is connected with the transducer device and is used for controlling the sound energy emitted by the transducer device so as to enable the wafer to be subjected to uniform sound wave energy. The wafer is scanned in a rotating and moving mode, the size of the energy conversion device does not need to be matched with that of the wafer any more, and the manufacturing difficulty of the piezoelectric ceramic piece can be reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor cleaning, in particular to a megasonic cleaning system for a large-size wafer.
Background
The ultrasonic cleaning technology is one of the most commonly used industrial cleaning technologies, and the traditional ultrasonic cleaning technology is to remove stains on the surface of an object by the cavitation generated in liquid by 20kHz-100kHz ultrasonic waves so as to achieve the purpose of cleaning. However, the ultrasonic cavitation is too strong, which can cause certain damage to the surface of an object, for example, in the cleaning of precision components such as semiconductor devices and optical precision components, the surface of the device is damaged by the traditional high-frequency ultrasonic cleaning because the surface of the device has a microstructure. In addition, the higher the ultrasonic frequency is, the smaller the particle size of the impurity particles to be cleaned is, and the traditional ultrasonic cleaning with the highest frequency of 100kHz is difficult to clean the impurity particles below 1 micron.
When the ultrasonic wave with the frequency higher than 400kHz is transmitted in liquid, an extremely-thin acoustic boundary layer with large velocity gradient can be formed near the surface of a cleaned part, the impurity particles fall off from the surface of the part under the vibration action of megahertz frequency of the liquid, micron and submicron impurity particles on the surface of the part can be cleaned, and the ultra-precise cleaning process is realized. In addition, the surface of the cleaned part is not damaged due to the extremely low cavitation effect in the high-frequency ultrasonic cleaning process, and the phenomena of corrosion or damage and the like caused after the precise component is cleaned can be effectively solved. Therefore, the megasonic device capable of emitting megasonic level is widely applied to the field of semiconductor manufacturing, and can play an important role in key processes such as chemical mechanical polishing, developing, glue removing, metal stripping, etching and the like besides the cleaning function.
The existing megasonic cleaning technology is mainly divided into a groove type, a spray type and a laminating type. The tank type is similar to the traditional ultrasonic cleaning, the megasonic transmitting device is arranged at the bottom of the water tank, and the wafer is placed in the water tank during cleaning. The defects of the mode are that the megasonic field received by the surface of the wafer is gradually weakened from bottom to top, the distribution is not uniform, the cleaning effect is influenced, and in addition, the cleaning solution is easy to cause secondary pollution in the groove. The spray type is that the megasonic transmitter is made into a nozzle form, megasonic falls onto a wafer along with water flow, and the device has higher sound transmission efficiency compared with a groove type megasonic device arranged at the bottom of a processing groove and can avoid secondary pollution. But the defect is that the megasonic generator is far away from the wafer, the sound energy transmission efficiency is still damaged, and the megasonic generator can work only by large-flow cleaning liquid, so that the cleaning liquid is wasted greatly.
The fitting method is currently the most optimized method in the prior art, and referring to fig. 1, the megasonic transmitter 2 'is usually close to the surface of the wafer 1' with a gap between them. In the cleaning process, the megasonic device is fixed, the wafer rotates, and the cleaning liquid is continuously conveyed to the wafer by the liquid supply device 3'. The megasonic transmitting surface is close to the wafer, so the energy transmission efficiency is high, the power density of the megasonic transmitting surface can be achieved only by 2W/cm2, and the spray type and groove type megasonic devices usually need 5W/cm 2 or even higher power density. In addition, the laminating type cleaning machine can complete cleaning only by a small amount of cleaning liquid, and compared with the other two modes, the adhering type cleaning machine can greatly save the use of the cleaning liquid. Because the linear velocity of the wafer is linearly increased from the center to the edge of the wafer, in order to ensure that the sound field obtained by the whole wafer surface is uniform when the wafer rotates, the megasonic transmitting device can be realized by a megasonic device which is made into a fan-shaped structure, so that the megasonic energy received from the edge to the center of the circle is linearly weakened when the wafer rotates, and the sound energy with uniform front surface is obtained.
However, the defect of this technique is that the size of the megasonic transmitting surface needs to be matched with the size of the wafer, which requires that the size of the piezoelectric ceramic piece in the megasonic transmitting device is matched with the size of the wafer to be cleaned, and the larger the wafer is, the larger the piezoelectric ceramic piece is required to be. For example, a 12-inch wafer is generally manufactured by a traditional method through a sector piezoelectric ceramic plate with a radius of 6 inches and a circle center angle of more than 30 degrees, and the manufacturing difficulty of the piezoelectric ceramic plate with the size is very high, so that the piezoelectric ceramic plate can be split into two ceramic plates to be spliced in practical application, and a seam exists, so that an uneven sound field is caused. With the development of technology, the size of the wafer is still enlarged, such as 14, 16, 20 inches or more, which makes the method more difficult to be realized by a single fan-shaped ceramic wafer, and the method needs to be implemented by splicing a plurality of ceramic wafers, and the more the splices are, the more the seams are, the worse the uniformity of the emitted acoustic energy field is. Or the megasonic cleaning device can only be manufactured by a small ceramic wafer, usually in a circular shape, and then the megasonic cleaning device moves to scan to realize whole surface treatment similar to a spraying type megasonic cleaning device, but a megasonic sound field with a uniform whole surface can not be obtained when the wafer rotates, and the cleaning efficiency of the megasonic cleaning device with a small use area is also reduced.
Disclosure of Invention
The invention provides a megasonic cleaning system for a large-size wafer, which is used for solving the defect that a piezoelectric ceramic wafer in the prior art is limited by the size of the wafer and needs to be increased along with the increase of the size of the wafer, and realizing the effect that the large-size wafer can be processed by using a smaller piezoelectric ceramic wafer on the premise of saving cleaning liquid and ensuring the megasonic sound field on the wafer to be uniformly distributed during cleaning.
The invention provides a megasonic cleaning system for a large-size wafer, which comprises:
a base body;
the rotating seat is rotatably arranged on the seat body;
the oscillator is connected with the rotating seat and rotates along with the rotating seat;
the first driving mechanism is in transmission connection with the rotating seat and is used for driving the rotating seat to rotate;
the energy conversion device is used for converting electric energy into acoustic energy and is connected with the oscillator;
the second driving mechanism is used for being connected with the first end face of the wafer and driving the wafer to rotate, and the second driving mechanism is arranged opposite to the oscillator so that the second end face of the wafer faces the oscillator and is opposite to the running track of the energy conversion device;
a liquid delivery mechanism provided with a liquid discharge port for discharging a cleaning liquid, the liquid discharge port facing the oscillator;
the control assembly is connected with the transduction device and is used for controlling the sound energy emitted by the transduction device;
when the energy conversion device runs towards the circle center along the periphery of the wafer, the control assembly controls the acoustic energy emitted by the energy conversion device to be gradually reduced, and/or when the energy conversion device runs towards the periphery along the circle center of the wafer, the control assembly controls the acoustic energy emitted by the energy conversion device to be gradually increased.
According to the megasonic cleaning system for the large-size wafer, the control assembly comprises a first energy converter and a second energy converter, wherein the first energy converter can convert electric energy into acoustic energy, and the second energy converter can convert the acoustic energy into electric energy;
the first energy converter comprises an acoustic wave transmitting part, the second energy converter comprises an acoustic wave receiving part, the first energy converter is arranged on the seat body, the second energy converter is arranged on the rotating seat and is electrically connected with the energy conversion device, and the acoustic wave receiving part and the acoustic wave transmitting part can be switched between a relative state and a staggered state;
the transduction device is followed the operation of the periphery side direction centre of a circle of wafer, the acoustic wave emission portion with the coincidence scope of acoustic wave receiving unit reduces gradually, and/or the transduction device is followed the operation of the outside week side of the centre of a circle of wafer, the acoustic wave emission portion with the coincidence scope of acoustic wave receiving unit increases gradually.
According to the megasonic cleaning system for the large-size wafer, the seat body is provided with a cavity structure into which the first end of the rotating seat extends, and the cavity structure is used for accommodating a conducting medium;
the first energy converter is arranged in the cavity structure;
the second energy converter is arranged at the first end of the rotating seat.
According to the megasonic cleaning system for the large-size wafers, the first energy converter comprises a plurality of sound wave emitting parts which are sequentially distributed along the circumferential direction of the rotating axis of the rotating seat, the second energy converter comprises a plurality of sound wave receiving parts which are sequentially distributed along the circumferential direction of the rotating axis of the rotating seat, the number of the second driving mechanisms is multiple, and the number of the sound wave emitting parts, the number of the sound wave receiving parts and the number of the energy conversion devices are the same as the number of the second driving mechanisms;
a spacing space is arranged between any two adjacent sound wave transmitting parts;
when the energy conversion device runs to be opposite to the center of the wafer, the sound wave receiving part is opposite to the interval space between the two sound wave transmitting parts, and when the energy conversion device runs to be opposite to the outer periphery side of the wafer, the sound wave receiving part is opposite to the sound wave transmitting part.
According to the megasonic cleaning system for the large-size wafers, the number of the second driving mechanisms, the number of the first energy converters and the number of the second energy converters are all multiple, the number of the energy conversion devices is the same as that of the second energy converters, the energy conversion devices are correspondingly connected with the second energy converters one by one, and the number of the second driving mechanisms is the same as that of the first energy converters;
the middle part of the sound wave emitting part is respectively connected with the two end parts through inclined planes, and each inclined plane is inclined inwards in the direction from the end part to the middle part;
when the energy conversion device runs to be opposite to the circle center of the wafer, the sound wave receiving part corresponding to the energy conversion device is opposite to the middle part of the sound wave transmitting part, and when the energy conversion device runs to be opposite to the outer peripheral side of the wafer, the sound wave receiving part corresponding to the energy conversion device is opposite to the end part of the sound wave transmitting part.
According to the megasonic cleaning system for the large-size wafer, provided by the invention, the sonic wave receiving part is arranged on the end face of the first end of the rotating seat, and the sonic wave emitting part is arranged on the bottom surface in the cavity structure.
According to the megasonic cleaning system for the large-size wafer, provided by the invention, the sonic wave receiving part is arranged on the outer peripheral surface of the first end of the rotating seat, and the sonic wave emitting part is arranged on the inner peripheral surface of the cavity structure.
According to the megasonic cleaning system for the large-size wafer, the energy conversion device comprises a third energy converter, the third energy converter is electrically connected with the second energy converter, and the third energy converter is provided with an emitting surface for emitting sound waves;
the total area of the sound wave emitting portions is set to 1/5-1/10 of the total area of the emitting surfaces.
The megasonic cleaning system for the large-size wafer further comprises a cleaning tank, wherein the oscillator is arranged in a circular structure;
the cleaning tank is arranged to be an annular groove, and a notch of the cleaning tank is opposite to the outer edge of the oscillator.
According to the megasonic cleaning system for the large-size wafers, provided by the invention, the number of the second driving mechanisms is multiple, and the second driving mechanisms are sequentially distributed along the circumferential direction of the rotating axis of the rotating seat.
The megasonic cleaning system for the large-size wafer drives the rotating seat to rotate through the first driving mechanism, so that the running track of the energy conversion device passes through the surface to be cleaned of the wafer, and meanwhile, the second driving mechanism drives the wafer to rotate to be matched with the first driving mechanism, so that the energy conversion device can scan the surface to be cleaned of the whole wafer. Therefore, the wafer is scanned in a rotating and moving mode, the size of the energy conversion device does not need to be matched with that of the wafer any more, and therefore the manufacturing difficulty of the piezoelectric ceramic piece in the energy conversion device is reduced.
Meanwhile, in the megasonic cleaning system for the large-size wafer, the energy conversion device is driven to rotate by the rotating seat in the process of cleaning the wafer, and meanwhile, the second driving mechanism drives the wafer to rotate. When the transduction device moves to the outer peripheral side of the wafer, because the linear velocity of the outer peripheral side of the wafer is higher, the higher sound energy is required to be cleaned, the sound energy emitted by the transduction device is controlled by the control assembly at the moment to be increased, when the transduction device moves to the circle center of the wafer, because the linear velocity of the circle center of the wafer is lower, the high sound energy is not required to be cleaned, the sound energy emitted by the transduction device is controlled by the control assembly at the moment to be reduced, so that the sound energy received by the surface to be cleaned of the wafer is uniform, the cleaning effect of the wafer is improved, the wafer is prevented from being damaged due to the excessive energy, and meanwhile, the energy can be saved.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a megasonic cleaning system for large wafers according to the prior art;
FIG. 2 is a schematic diagram of a megasonic cleaning system for large wafers according to the present invention;
FIG. 3 is a schematic diagram of a megasonic cleaning system for large wafers in accordance with an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a megasonic cleaning system for large-scale wafers according to a first embodiment of the present invention;
fig. 5 is a schematic structural diagram of a first energy converter in a first embodiment of the invention;
fig. 6 is a schematic structural diagram of a second energy converter in the first embodiment of the invention;
FIG. 7 is a schematic diagram illustrating the operation of a megasonic cleaning system for large wafers in a first embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a megasonic cleaning system for large wafers according to a second embodiment of the present invention;
fig. 9 is a schematic structural diagram of a first energy converter in a second embodiment of the invention;
FIG. 10 is a schematic diagram illustrating the operation of a megasonic cleaning system for large wafers in a second embodiment of the present invention;
FIG. 11 is a schematic structural diagram of a megasonic cleaning system for large-scale wafers according to a third embodiment of the present invention;
fig. 12 is a schematic structural diagram of a first energy converter in a third embodiment of the invention;
FIG. 13 is a schematic diagram illustrating the operation of a megasonic cleaning system for large wafers in a third embodiment of the present invention;
fig. 14 is a schematic structural diagram of a second energy converter in a second embodiment of the invention;
fig. 15 is a schematic structural diagram of a second energy converter in a third embodiment of the invention;
reference numerals:
1. a base body; 2. a rotating seat; 3. a driven gear; 4. a first drive mechanism; 5. a wafer; 6. a liquid delivery mechanism; 7. a first energy converter; 8. a second energy converter; 9. a cavity structure; 10. a first electrode; 11. a second electrode; 12. a wire; 14. a bevel; 15. an oscillator; 16. a cleaning tank; 17. a second drive mechanism; 18. a third energy converter; 19. piezoelectric ceramic plates; 20. a circular electrode; 21. a square electrode; 22. and an arc electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A megasonic cleaning system for large wafers in accordance with embodiments of the invention is described below with reference to fig. 2-15.
Specifically, the megasonic cleaning system for large-sized wafers comprises a base body 1, a rotating base 2, a first driving mechanism 4, a transducer, a second driving mechanism 17, a liquid conveying mechanism 6 and a control assembly.
Referring to fig. 1, the base 1 may be configured as a housing structure.
The rotating base 2 is rotatably arranged on the base body 1. For example, as shown in fig. 4, the seat body 1 is provided with a bearing hole, the bearing hole is provided with a bearing, and the rotating seat 2 is sleeved in the bearing so as to be rotatably connected with the seat body 1 through the bearing.
The oscillator 15 is connected to the rotary base and rotates with the rotary base. For example, the oscillator 15 includes, but is not limited to, being connected to the rotating base by means of a screw connection. For example, the oscillator may be quartz, sapphire, or alumina.
The first driving mechanism 4 is used for being in transmission connection with the rotating seat 2 and driving the rotating seat 2 to rotate.
For example, the first drive mechanism 4 may include a motor. The motor is installed on pedestal 1 to the cover is equipped with drive gear on the output shaft of motor, rotates and is provided with driven gear 3 with drive gear engaged with on the seat 2, and the motor passes through gear drive's mode drive and rotates seat 2 and rotate.
The transducer means is for converting electrical energy into acoustic energy and is connected to the oscillator 15 for rotation with the oscillator 15.
For example, the transducer means includes, but is not limited to, an adhesive bond with the oscillator 15 to transmit acoustic energy to the oscillator 15, so that the oscillator vibrates to generate ultrasonic waves or megasonic waves, thereby cleaning the wafer.
The second driving mechanism 17 is used for connecting with the first end face of the wafer and driving the wafer to rotate. The second drive mechanism 17 is arranged opposite the oscillator 15 so that the second end face of the wafer, i.e. the face to be cleaned, faces the oscillator and is opposite the path of travel of the transducer means.
Further, referring to fig. 6, 9 and 12, the center of the wafer 5 is opposite to the track of the transducer.
Alternatively, the second driving mechanism 17 may include a motor and a suction cup. The sucking disc is installed on the output shaft of motor and is used for adsorbing wafer 5, and motor drive sucking disc drives wafer 5 and rotates.
The liquid delivery mechanism 6 is provided with a liquid discharge port for discharging the cleaning liquid. The liquid discharge port of the liquid transport mechanism 6 faces the oscillator. The cleaning liquid is able to transmit the acoustic energy emitted by the oscillator to the surface of the wafer on the one hand and to wash away impurities falling from the surface of the wafer 5 on the other hand.
For example, the liquid delivery mechanism 6 may include a liquid pump and piping. A liquid pump draws cleaning liquid and drives the cleaning liquid through a conduit to the oscillator surface.
The control assembly is coupled to the transducer assembly and is configured to control the amount of acoustic energy emitted by the transducer assembly.
When the energy conversion device runs along the periphery of the wafer to the circle center, the control assembly controls the acoustic energy emitted by the energy conversion device to gradually decrease, and/or when the energy conversion device runs along the circle center of the wafer to the periphery side, the control assembly controls the acoustic energy emitted by the energy conversion device to gradually increase.
In the megasonic cleaning system for the large-size wafer in the embodiment of the invention, the first driving mechanism 4 drives the rotating base 2 to rotate, so that the running track of the energy conversion device passes through the surface to be cleaned of the wafer 5, and the second driving mechanism 17 drives the wafer 5 to rotate to be matched with the first driving mechanism 4, so that the energy conversion device can scan the whole surface to be cleaned of the wafer 5. Thus, by scanning the wafer 5 in a rotating and moving manner, the size of the transducer device does not need to match the size of the wafer 5, thereby reducing the difficulty in manufacturing the piezoelectric ceramic plate 19 in the transducer device.
Meanwhile, in the megasonic cleaning system for large-sized wafers in the embodiment of the invention, the rotating base 2 drives the energy conversion device to rotate in the process of cleaning the wafer 5, and the second driving mechanism 17 drives the wafer 5 to rotate. When the transduction device runs to the outer peripheral side of the wafer 5, the linear velocity of the outer peripheral side of the wafer 5 is high, and the higher sound energy is needed for cleaning, at the moment, the sound energy emitted by the transduction device is controlled by the control assembly to be increased, when the transduction device runs to the circle center of the wafer 5, the linear velocity of the circle center of the wafer 5 is low, and the high sound energy is not needed for cleaning, at the moment, the sound energy emitted by the transduction device is controlled by the control assembly to be reduced, so that the sound energy received by the surface to be cleaned of the wafer 5 is uniform, the cleaning effect of the wafer 5 is improved, the damage of the local part of the wafer 5 due to the excessive energy is avoided, and meanwhile, the energy can be saved.
As shown in fig. 2, the shaded portion in the figure represents a transducer device with a fan-shaped structure in the prior art, and the megasonic cleaning system for a large-sized wafer in the embodiment of the invention controls the energy emitted by the transducer device through the control assembly, so that the same effect as the transducer device with a fan-shaped structure in the prior art, that is, the effect of gradually weakening the sonic energy in the direction from the outer periphery of the wafer 5 to the center of the circle, can be achieved.
In some embodiments provided by the present invention, the control assembly comprises a first energy converter 7 capable of converting electrical energy into acoustic energy and a second energy converter 8 capable of converting acoustic energy into electrical energy.
The first energy converter 7 comprises an acoustic wave emitting portion and the second energy converter 8 comprises an acoustic wave receiving portion. The first energy converter 7 is disposed on the base 1, and the second energy converter 8 is disposed on the rotating base 2 and electrically connected to the energy conversion device. When the rotating seat rotates, the sound wave receiving part and the sound wave transmitting part can be switched between a relative state and a staggered state.
The overlapping range of the sound wave emitting part and the sound wave receiving part is gradually reduced when the energy conversion device runs along the periphery of the wafer 5 to the circle center, and/or the overlapping range of the sound wave emitting part and the sound wave receiving part is gradually increased when the energy conversion device runs along the circle center of the wafer 5 to the periphery.
When the overlapping range of the sound wave emitting part of the first energy converter 7 and the sound wave receiving part of the second energy converter 8 is increased, the second energy converter 8 can receive more energy and transmit the energy to the energy conversion device, so that the energy conversion device can generate stronger sound energy. When the overlapping range of the acoustic wave emitting part of the first energy converter 7 and the acoustic wave receiving part of the second energy converter 8 is reduced, the energy received by the second energy converter 8 is reduced, so that the acoustic energy generated by the transducer device is reduced.
With the arrangement, the size of the sound energy generated by the energy conversion device can be controlled through the change of the overlapping area between the sound wave transmitting part of the first energy converter 7 and the sound wave receiving part of the second energy converter, namely, the sound energy transmitted by the energy conversion device can be adjusted through a mechanical and circuit structure, and the structure is more stable and reliable. Furthermore, since no connection line is required between the first energy converter 7 and the second energy converter 8, the second energy converter is not restricted by the connection line when rotating with the rotating base 2.
In some embodiments provided by the present invention, the base body 1 is provided with a cavity structure 9 into which the first end of the rotating base 2 extends, and the cavity structure 9 is used for accommodating a conducting medium.
The first energy converter 7 is arranged within the cavity structure 9.
The second energy converter 8 is arranged at a first end of the rotatable seat 2.
The conductive medium includes, but is not limited to, water.
With this arrangement, the first energy converter 7 can transfer energy to the second energy converter 8 through the conductive medium, thereby reducing energy loss and improving energy transmission efficiency.
Optionally, the cavity structure 9 is provided with a liquid inlet for the conduction medium to enter and a liquid outlet for the conduction medium to exit.
Referring to fig. 4-7, in some embodiments provided by the present invention, the first energy converter 7 comprises a plurality of acoustic wave emitting portions distributed in sequence along the circumferential direction of the rotation axis of the rotating bed 2.
The second energy converter 8 includes a plurality of sound wave receiving portions that are sequentially distributed in the circumferential direction of the rotation axis of the rotary holder 2.
The number of the second driving mechanisms is multiple. The number of the sound wave transmitting parts, the number of the sound wave receiving parts and the number of the energy conversion devices are the same as the number of the second driving mechanisms.
And a spacing space is arranged between any two adjacent sound wave transmitting parts.
Referring to fig. 7, when the transducer device is operated to face the center of the wafer 5, the acoustic wave receiving portion faces the space between the two acoustic wave transmitters, and when the transducer device is operated to face the outer peripheral side of the wafer 5, the acoustic wave receiving portion faces the acoustic wave transmitting portion.
Specifically, referring to fig. 6, the second energy converter includes a piezoceramic sheet 19, a second electrode 11 and a circular electrode 20. A plurality of second electrodes 11 in a fan-shaped structure are arranged on the first end surface of the piezoelectric ceramic piece 19, and a space is arranged between any two adjacent second electrodes 11. The second end face of the piezoelectric ceramic piece 19 is provided with a circular electrode 20. The portion of the piezoelectric ceramic plate 19 provided with the second electrode 11 constitutes the above-described acoustic wave receiving portion.
Further, as shown in fig. 6, one ends of the second electrodes 11 close to the outer peripheral side of the piezoelectric ceramic plate 19 are connected to each other and form a covered edge, and the covered edge is folded over the second end face of the piezoelectric ceramic plate 19, so that the leads of the second electrodes 11 and the circular electrodes 20 are both disposed on the second end face, thereby reducing the manufacturing difficulty.
The piezoelectric ceramic plate 19 has a piezoelectric effect, and when receiving sound energy, a current is generated between electrodes on two end faces of the piezoelectric ceramic plate 19, or when a changing current is applied to the electrodes on the two end faces, the piezoelectric ceramic plate 19 vibrates. The piezoelectric ceramic plates described herein all perform acousto-electric conversion based on this principle, and other parts are not described again.
Referring to fig. 5, the first energy converter 7 and the second energy converter 8 have the same structure, and the first energy converter 7 includes a piezoelectric ceramic plate 19, a first electrode 10 and a circular electrode 20. The first end face of the piezoelectric ceramic piece 19 is provided with a plurality of first electrodes 10 in a fan-shaped structure, and a space is arranged between any two adjacent first electrodes 10. The second end face of the piezoelectric ceramic plate 19 is provided with a circular electrode 20. The portion of the piezoelectric ceramic sheet 19 provided with the first electrode 10 constitutes the above-described acoustic wave emitting portion. First ends of the first electrodes 10 close to the outer peripheral side of the piezoelectric ceramic plate 19 are connected with each other to form a wrapping edge, and are folded over on a second end face of the piezoelectric ceramic plate 19.
In use, the first end face of the first energy converter 7 is arranged opposite the first end face of the second energy converter 8. The output of the sonic power source, e.g. a megasonic power source, is connected to the first electrode 10 and the circular electrode 20 of the first energy converter 7, respectively, so that the megasonic power source can deliver electrical energy at megasonic frequencies to the first energy converter 7. The first energy converter 7 converts the electric energy into the sound energy, the sound energy is emitted from the sound wave emitting part and is transmitted to the second energy converter 8 through a conducting medium, the second energy converter 8 receives the sound energy through the sound wave receiving part and converts the sound energy into the electric energy, the electric energy is transmitted to the megasonic emitter through the conducting wire 12, and the megasonic emitter emits the megasonic sound energy to the surface of the wafer 5 to realize cleaning.
As shown in fig. 6, when the first electrode 10 of the first energy converter 7 is opposite to the second electrode 11 of the second energy converter 8, the second energy converter 8 can receive more acoustic energy, and the current generated by the second energy converter 8 is larger, so that the energy conversion device generates higher energy output. When the second energy transforming second electrode 11 is opposite to the space between the two first electrodes 10, the second energy converter 8 receives less acoustic energy from the first energy converter 7 and the second energy converter 8 generates less current, so that the energy transforming device generates a lower energy output.
Further, the number of the second driving mechanisms is plural, so that the number of the wafers 5 can be set to be plural, thereby improving the cleaning efficiency of the large-sized wafer cleaning system. The number of the transducer devices is the same as that of the wafer 5, and each transducer device is connected in parallel between the second electrode 11 of the second energy converter 8 and the circular electrode 20 of the second energy converter 8 through the lead 12.
Further, the diameter of the second energy converter 8 is larger than the diameter of the first energy converter 7, so that the sound energy generated by the first energy converter 7 can be fully absorbed by the second energy converter 8.
Of course, the arrangement of the first energy converter 7 and the second energy converter 8 is not limited to the above-described manner.
For example, referring to fig. 8 to 13, in other embodiments provided by the present invention, the first energy converter 7 and the second energy converter 8 are each provided in plurality. The number of the energy conversion devices is the same as that of the second energy converters 8, and the energy conversion devices are connected in a one-to-one correspondence manner. The number of the second driving mechanisms is the same as that of the first energy converters. The second driving mechanisms can drive the wafers to be cleaned at the same time, so that the cleaning efficiency of the wafers is improved. The plurality of first energy converters 7 and the plurality of second energy converters 8 are arranged in sequence in the circumferential direction of the rotation axis of the rotating base 2.
Referring to fig. 9 and 12, the middle portion of the sound wave emitting portion is connected to both end portions thereof by inclined surfaces 14, respectively, and each inclined surface 14 is inclined inward in the direction from the end portion to the middle portion.
Referring to fig. 9 and 12, alternatively, the first end of the sound wave emitting part is connected to the middle part by two oppositely arranged inclined surfaces 14, and the second end is also connected to the middle part by two oppositely arranged inclined surfaces 14.
Referring to fig. 10 and 13, when the transducer device is operated to face the center of the wafer 5, the acoustic wave receiving portion corresponding to the transducer device faces the middle of the acoustic wave emitting portion, and when the transducer device is operated to face the outer peripheral side of the wafer 5, the acoustic wave receiving portion corresponding to the transducer device faces the end of the acoustic wave emitting portion.
Since the middle portion of the first electrode 10 is narrow and the end portion is wide, when the second electrode 11 is opposite to the end portion of the first electrode 10, the second energy converter 8 can receive more acoustic energy, and the current generated by the second energy converter 8 is larger, so that the energy conversion device generates higher energy output. When the second electrode 11 is opposite to the middle of the first electrode 10, the acoustic energy received by the second energy converter 8 from the first energy converter 7 is less, and the current generated by the second energy converter 8 is less, so that the energy conversion device generates a lower energy output.
Referring to fig. 8, in some embodiments of the present invention, the sound wave receiving portion is disposed on the end surface of the first end of the rotating base 2, and the sound wave emitting portion is disposed on the bottom surface inside the cavity structure 9.
Referring to fig. 9, in particular, the first energy converter 7 includes a first electrode 10, a piezoceramic sheet 19 and a square electrode 21. The first electrode 10 is disposed on a first end face of the piezoelectric ceramic plate 19, the square electrode 21 is disposed on a second end face of the piezoelectric ceramic plate 19, and an end portion of the first electrode 10 is folded and folded on the second end face of the piezoelectric ceramic plate 19. The portion of the piezoelectric ceramic plate 19 where the first electrode 10 is disposed on the first end face constitutes the acoustic wave emitting portion.
Referring to fig. 14, the second energy converter 8 includes a second electrode 11 and a piezoceramic sheet 19. The two end faces of the piezoelectric ceramic plate 19 are both provided with second electrodes 11, and the second electrodes 11 may be strip-shaped electrodes. The portion of the second energy converter 8 on which the second electrode is provided on either end face may constitute the above-described acoustic wave receiving unit. The length of the second electrode 11 is greater than the width of the first electrode 10.
Of course, the second electrode 11 is not limited to be disposed on the end surface of the first end of the rotating base 2.
For example, referring to fig. 11, in another embodiment provided by the present invention, the sound wave receiving portion is disposed on the outer circumferential surface of the first end of the rotating base 2, and the sound wave emitting portion is disposed on the inner circumferential surface of the cavity structure 9.
Referring to fig. 12, in particular, the first energy converter 7 includes a first electrode 10, a piezoceramic sheet 19 and an arc-shaped electrode 22. The piezoelectric ceramic piece 19 is of an arc structure, the first electrode 10 is arranged on the inner concave surface of the piezoelectric ceramic piece 19 and faces the cavity structure 9, the arc electrode 22 is arranged on the outer convex surface of the piezoelectric ceramic piece 19, and the end part of the first electrode 10 is turned over on the outer convex surface of the piezoelectric ceramic piece 19. The part of the piezoelectric ceramic plate provided with the first electrode 10 constitutes the acoustic wave emitting part.
Referring to fig. 15, the second energy converter 8 includes a second electrode 11 and a piezoelectric ceramic plate 19, the second electrode 11 is disposed on both end surfaces of the piezoelectric ceramic plate 19, and the length of the second electrode 11 is greater than the width of the first electrode 10. The part of the convex surface of the piezoelectric ceramic piece provided with the second electrode can form the sound wave receiving part.
In some embodiments provided by the present invention, the transduction means comprises a third energy converter 18. The third energy converter 18 may be connected to the oscillator 15 by means of adhesive bonding. The third energy converter 18 is electrically connected to the second energy converter 8. The third energy converter is provided with an emitting surface for emitting sound waves. The total area of the sound wave emitting portions is set to 1/5-1/10 of the total area of the emitting surfaces.
In order to avoid damage to the surface of the wafer 5, the megasonic power density for cleaning the surface of the wafer 5 should not be too high, and is generally limited to 2-3W/cm2, which can ensure effective cleaning without damaging the wafer 5. The normal sound power density of the piezoceramic sheet can be 10-20W/cm2, but the piezoelectric ceramic sheet is damaged when the sound power density exceeds 20W/cm 2. So if the power density of the third energy converter 18 is 2W/cm2 in the present invention, the power density of the first energy converter 7 can be loaded 5-10 times the power density of the third energy converter.
For example, the third energy converter 18 may include a piezoceramic wafer and electrodes disposed on both end faces of the piezoceramic wafer. The part of the piezoelectric ceramic piece, which is provided with the electrode on the end surface connected with the oscillator, forms an emitting surface. The electrodes on the two end faces of the third energy converter 18 are electrically connected with the electrodes on the two end faces of the second energy converter 8, and the second energy converter 8 transmits current to the third energy converter, so that the piezoelectric ceramic plate 19 is driven to vibrate by the current. The piezoelectric ceramic plate 19 drives the oscillator to vibrate, and the oscillator outputs megasonic waves or ultrasonic waves to clean the surface of the wafer 5.
Optionally, the first electrode 10, the second electrode 11, the circular electrode 20, the square electrode 21 and the arc electrode 22 may be provided with a nickel, pure titanium or titanium alloy material to prevent water and corrosion.
In some embodiments of the present invention, the megasonic cleaning system for large wafers further comprises a cleaning tank 16, and the oscillator 15 is configured in a circular configuration.
The cleaning bath 16 is provided as an annular groove, and a notch of the cleaning bath 16 is opposed to an outer edge of the oscillator 15. The water injected from the liquid feed mechanism 6 flows into the annular groove through the gap between the wafer 5 and the oscillator 15 and is collected.
Further, the oscillator is made of quartz, sapphire or ruby.
In some embodiments provided by the present invention, the number of the second driving mechanisms 17 is multiple, and the multiple second driving mechanisms 17 are distributed in sequence along the circumferential direction of the rotation axis of the rotating base 2. With such an arrangement, the megasonic cleaning system for large-sized wafers in the embodiment of the invention can clean a plurality of wafers 5 at a time, thereby improving the cleaning efficiency of the wafers 5.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. A megasonic cleaning system for large wafers, comprising:
a base body;
the rotating seat is rotatably arranged on the seat body;
the oscillator is connected with the rotating seat and rotates along with the rotating seat;
the first driving mechanism is in transmission connection with the rotating seat and is used for driving the rotating seat to rotate;
the energy conversion device is used for converting electric energy into acoustic energy and is connected with the oscillator;
the second driving mechanism is used for being connected with the first end face of the wafer and driving the wafer to rotate, and the second driving mechanism is arranged opposite to the oscillator so that the second end face of the wafer faces the oscillator and is opposite to the running track of the energy conversion device;
a liquid delivery mechanism provided with a liquid discharge port for discharging a cleaning liquid, the liquid discharge port facing the oscillator;
the control assembly is connected with the transduction device and is used for controlling the sound energy emitted by the transduction device;
when the energy conversion device runs along the periphery of the wafer to the circle center, the control assembly controls the acoustic energy emitted by the energy conversion device to gradually decrease, and/or when the energy conversion device runs along the circle center of the wafer to the periphery, the control assembly controls the acoustic energy emitted by the energy conversion device to gradually increase;
the control assembly comprises a first energy converter capable of converting electrical energy into acoustic energy and a second energy converter capable of converting acoustic energy into electrical energy;
the first energy converter comprises an acoustic wave transmitting part, the second energy converter comprises an acoustic wave receiving part, the first energy converter is arranged on the seat body, the second energy converter is arranged on the rotating seat and is electrically connected with the energy conversion device, and the acoustic wave receiving part and the acoustic wave transmitting part can be switched between a relative state and a staggered state;
the transduction device is followed the operation of the periphery side direction centre of a circle of wafer, the acoustic wave emission portion with the coincidence scope of acoustic wave receiving unit reduces gradually, and/or the transduction device is followed the operation of the outside week side of the centre of a circle of wafer, the acoustic wave emission portion with the coincidence scope of acoustic wave receiving unit increases gradually.
2. The megasonic cleaning system for large-sized wafers as recited in claim 1, wherein the base has a cavity structure into which the first end of the rotating base extends, the cavity structure being configured to receive a conductive medium;
the first energy converter is arranged in the cavity structure;
the second energy converter is arranged at the first end of the rotating seat.
3. The megasonic cleaning system for wafers with large dimensions as claimed in claim 2, wherein the first energy converter comprises a plurality of acoustic wave emitting portions sequentially distributed along a circumferential direction of a rotation axis of the rotary table, the second energy converter comprises a plurality of acoustic wave receiving portions sequentially distributed along a circumferential direction of the rotation axis of the rotary table, the number of the second driving mechanisms is plural, and the number of the acoustic wave emitting portions, the number of the acoustic wave receiving portions and the number of the transducing devices are the same as the number of the second driving mechanisms;
a spacing space is arranged between any two adjacent sound wave transmitting parts;
when the energy conversion device runs to be opposite to the center of the wafer, the sound wave receiving part is opposite to the interval space between the two sound wave transmitting parts, and when the energy conversion device runs to be opposite to the outer periphery side of the wafer, the sound wave receiving part is opposite to the sound wave transmitting part.
4. The megasonic cleaning system for wafers with large dimensions as claimed in claim 2, wherein the number of the second driving mechanisms, the number of the first energy converters, and the number of the second energy converters are the same, and the number of the energy conversion devices is the same as the number of the second energy converters;
the middle part of the sound wave emitting part is respectively connected with the two end parts through inclined planes, and each inclined plane is inclined inwards in the direction from the end part to the middle part;
when the energy conversion device runs to be opposite to the circle center of the wafer, the sound wave receiving part corresponding to the energy conversion device is opposite to the middle part of the sound wave transmitting part, and when the energy conversion device runs to be opposite to the outer peripheral side of the wafer, the sound wave receiving part corresponding to the energy conversion device is opposite to the end part of the sound wave transmitting part.
5. The megasonic cleaning system for large-sized wafers according to claim 4, wherein the sonic receiving portion is disposed at an end surface of the first end of the rotating base, and the sonic emitting portion is disposed at a bottom surface of the interior of the chamber structure.
6. The megasonic cleaning system for wafers with large dimensions as claimed in claim 4, wherein the sonic receiving portion is disposed on an outer circumferential surface of the first end of the rotating base, and the sonic emitting portion is disposed on an inner circumferential surface of the chamber structure.
7. The megasonic cleaning system for wafers with large dimensions as claimed in any of claims 1 to 6, wherein the transducer arrangement comprises a third energy converter, which is electrically connected to the second energy converter, the third energy converter being provided with an emitting surface for emitting a sonic wave;
the total area of the sound wave emitting portions is set to 1/5-1/10 of the total area of the emitting surfaces.
8. The megasonic cleaning system for large wafers according to any of claims 1-6, further comprising a cleaning tank, wherein the oscillator is configured in a circular configuration;
the cleaning tank is arranged to be an annular groove, and a notch of the cleaning tank is opposite to the outer edge of the oscillator.
9. The megasonic cleaning system for large-sized wafers according to any one of claims 1 to 6, wherein the number of the second driving mechanisms is plural, and the plural second driving mechanisms are sequentially distributed along a circumferential direction of a rotation axis of the rotary table.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210024372.2A CN114054429B (en) | 2022-01-11 | 2022-01-11 | Megasonic cleaning system for large-size wafer |
| PCT/CN2022/134700 WO2023134313A1 (en) | 2022-01-11 | 2022-11-28 | Megasonic cleaning system for large-sized wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210024372.2A CN114054429B (en) | 2022-01-11 | 2022-01-11 | Megasonic cleaning system for large-size wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114054429A CN114054429A (en) | 2022-02-18 |
| CN114054429B true CN114054429B (en) | 2022-04-01 |
Family
ID=80230736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210024372.2A Active CN114054429B (en) | 2022-01-11 | 2022-01-11 | Megasonic cleaning system for large-size wafer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114054429B (en) |
| WO (1) | WO2023134313A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114054429B (en) * | 2022-01-11 | 2022-04-01 | 北京东方金荣超声电器有限公司 | Megasonic cleaning system for large-size wafer |
| CN114871199B (en) * | 2022-07-12 | 2022-11-08 | 江苏芯梦半导体设备有限公司 | Multi-frequency megasonic wave coupling wafer cleaning equipment and multi-frequency injection device |
| CN115254781B (en) * | 2022-09-30 | 2023-01-13 | 智程半导体设备科技(昆山)有限公司 | Megasonic cleaning device for semiconductor wafer capable of avoiding surface damage |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4766575A (en) * | 1986-02-05 | 1988-08-23 | Raytheon Company | Cylindrical sonar array |
| CN1921300A (en) * | 2005-08-23 | 2007-02-28 | 富士通媒体部品株式会社 | Surface acoustic wave apparatus |
| CN112674055A (en) * | 2019-09-29 | 2021-04-20 | 杭州晶雁电子科技有限公司 | Bee mite remover |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19629705A1 (en) * | 1996-07-24 | 1998-01-29 | Joachim Dr Scheerer | Ultrasonic cleaning especially of wafer |
| JPH1154471A (en) * | 1997-08-05 | 1999-02-26 | Tokyo Electron Ltd | Treatment device and treatment method |
| JP2002124504A (en) * | 2000-10-17 | 2002-04-26 | Dainippon Screen Mfg Co Ltd | Substrate cleaner and substrate cleaning method |
| JP4156520B2 (en) * | 2001-11-02 | 2008-09-24 | プロダクト・システムズ・インコーポレイテッド | Radial power megasonic transducer |
| KR100493016B1 (en) * | 2002-03-23 | 2005-06-07 | 삼성전자주식회사 | Megasonic cleaning apparatus for fabricating semiconductor device |
| KR100578139B1 (en) * | 2004-10-05 | 2006-05-10 | 삼성전자주식회사 | Cleaning probe and Megasonic cleaning apparatus having the same |
| JP2007173277A (en) * | 2005-12-19 | 2007-07-05 | Fujitsu Ltd | Spin cleaning device and wafer cleaning method |
| CN101540269B (en) * | 2008-03-20 | 2012-10-10 | 盛美半导体设备（上海）有限公司 | Method and device for cleaning semiconductor chip |
| CN102496591B (en) * | 2011-12-30 | 2016-04-06 | 上海集成电路研发中心有限公司 | The cleaning device of wafer and cleaning method |
| CN202638797U (en) * | 2012-04-17 | 2013-01-02 | 北京七星华创电子股份有限公司 | Chip cleaning device |
| US20140053868A1 (en) * | 2012-08-22 | 2014-02-27 | Sematech, Inc. | Method And Apparatus For Surface Cleaning |
| US9995821B2 (en) * | 2014-10-15 | 2018-06-12 | Qualcomm Incorporated | Active beam-forming technique for piezoelectric ultrasonic transducer array |
| JP2017046811A (en) * | 2015-08-31 | 2017-03-09 | セイコーエプソン株式会社 | Ultrasonic device, ultrasonic module, and ultrasonic measuring apparatus |
| CN106340477B (en) * | 2016-08-26 | 2019-08-20 | 北京七星华创电子股份有限公司 | A kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning device |
| US11766703B2 (en) * | 2018-08-15 | 2023-09-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for wafer cleaning |
| CN110976377B (en) * | 2019-12-10 | 2022-08-19 | 爱阔特(上海)清洗设备制造有限公司 | Ultrasonic cleaning device for wafer cleaning |
| CN112371645B (en) * | 2020-10-26 | 2022-02-22 | 北京北方华创微电子装备有限公司 | Acoustic wave cleaning device and wafer cleaning equipment |
| CN114054429B (en) * | 2022-01-11 | 2022-04-01 | 北京东方金荣超声电器有限公司 | Megasonic cleaning system for large-size wafer |
-
2022
- 2022-01-11 CN CN202210024372.2A patent/CN114054429B/en active Active
- 2022-11-28 WO PCT/CN2022/134700 patent/WO2023134313A1/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4766575A (en) * | 1986-02-05 | 1988-08-23 | Raytheon Company | Cylindrical sonar array |
| CN1921300A (en) * | 2005-08-23 | 2007-02-28 | 富士通媒体部品株式会社 | Surface acoustic wave apparatus |
| CN112674055A (en) * | 2019-09-29 | 2021-04-20 | 杭州晶雁电子科技有限公司 | Bee mite remover |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023134313A1 (en) | 2023-07-20 |
| CN114054429A (en) | 2022-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114054429B (en) | Megasonic cleaning system for large-size wafer | |
| US8279712B2 (en) | Composite transducer apparatus and system for processing a substrate and method of constructing the same | |
| US7614406B2 (en) | Method of cleaning substrates utilizing megasonic energy | |
| JP4519541B2 (en) | Ultrasonic cleaning equipment | |
| CN114345826B (en) | Megasonic transmitting device for cleaning wafer and sonic cleaning system | |
| US20070170812A1 (en) | System apparatus and methods for processing substrates using acoustic energy | |
| TWI600479B (en) | Ultrasonic and megasonic cleaning device | |
| KR20040014079A (en) | Apparatus for cleaning a substrate | |
| CN202290654U (en) | Mega sonic cleaning head and mega sonic cleaning system comprising same | |
| US9987666B2 (en) | Composite transducer apparatus and system for processing a substrate and method of constructing the same | |
| KR100852396B1 (en) | Cleaning device using ultrasonic | |
| CN101124053B (en) | System and method of powering a sonic energy source and use of the same to process substrates | |
| US7105985B2 (en) | Megasonic transducer with focused energy resonator | |
| JP2003093984A (en) | Wet processing nozzle and wet processor | |
| CN102327883B (en) | Megasonic cleaning head and megasonic cleaning system provided with same | |
| JP3075356B1 (en) | Ultrasonic cleaning equipment | |
| KR100927029B1 (en) | Transducer and Substrate Cleaning Apparatus Comprising the Same | |
| JP2008066401A (en) | Equipment and method for processing substrate | |
| KR100927028B1 (en) | Ultrasonic nozzle and substrate cleaning apparatus including the same | |
| KR100938249B1 (en) | Ultrasonic generator and wafer cleaning apparatus comprising the same | |
| CN116779473A (en) | Wafer cleaning device | |
| JPH11169803A (en) | Ultrasonic washer | |
| JPH11176788A (en) | Ultrasonic wave cleaning system | |
| CN116779486A (en) | Wafer cleaning device and wafer post-processing equipment | |
| KR101002706B1 (en) | Ultrasonic cleaning apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |