WO2023119703A1 - Procédé et appareil de production de tranche de cristal semi-conducteur - Google Patents

Procédé et appareil de production de tranche de cristal semi-conducteur Download PDF

Info

Publication number
WO2023119703A1
WO2023119703A1 PCT/JP2022/028053 JP2022028053W WO2023119703A1 WO 2023119703 A1 WO2023119703 A1 WO 2023119703A1 JP 2022028053 W JP2022028053 W JP 2022028053W WO 2023119703 A1 WO2023119703 A1 WO 2023119703A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor crystal
wire
crystal ingot
cutting
grooves
Prior art date
Application number
PCT/JP2022/028053
Other languages
English (en)
Japanese (ja)
Inventor
愼介 酒井
哲也 千葉
Original Assignee
有限会社サクセス
有限会社ドライケミカルズ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2021209574A external-priority patent/JP7100864B1/ja
Priority claimed from JP2022067973A external-priority patent/JP7104909B1/ja
Application filed by 有限会社サクセス, 有限会社ドライケミカルズ filed Critical 有限会社サクセス
Publication of WO2023119703A1 publication Critical patent/WO2023119703A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a method of manufacturing a semiconductor crystal wafer, in which the surface of a wafer sliced from a semiconductor crystal ingot ground into a cylindrical shape is subjected to high-precision grinding.
  • Si wafers and SiC wafers which are semiconductor crystal wafers of this type
  • a crystal-grown single crystal mass is formed into a cylindrical ingot as a wafer shape forming step, as shown in Patent Document 1 below.
  • Ingot forming process to be processed crystal orientation forming process of forming a notch in part of the outer circumference so as to serve as a mark indicating the crystal orientation of the ingot, and slicing the single crystal ingot into a thin disc-shaped wafer.
  • the layer removal step includes a process-affected layer removal step for removing the process-affected layer introduced into the wafer in the preceding step, and finally, as a mirror polishing step, the mechanical action of the polishing pad and the chemical action of the slurry.
  • a method for manufacturing a semiconductor crystal wafer is known that includes a chemical mechanical polishing (CMP) step in which polishing is performed using a combination of
  • an object of the present invention is to provide a semiconductor crystal wafer manufacturing method and manufacturing apparatus that can easily and reliably manufacture high-quality semiconductor crystal wafers.
  • a method for manufacturing a semiconductor crystal wafer according to a first aspect of the invention is a method for manufacturing a semiconductor crystal wafer by cutting a wafer into slices from a semiconductor crystal ingot ground into a cylindrical shape, a grooving step of forming a plurality of grooves extending around the entire side surface of the semiconductor crystal ingot; a cutting step of obtaining semiconductor crystal wafers by cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in the plurality of grooves formed in the groove processing step; with In the cutting step, when cutting the semiconductor crystal ingot into slices by making the plurality of wires arranged in the plurality of concave grooves formed in the groove processing step proceed while circulating, the wires and the semiconductor are cut into slices.
  • the wire support portion is a pair of cylindrical rods arranged parallel to the axial direction of the semiconductor crystal ingot, and the pair of rods is a grooving drum grindstone for forming the plurality of grooves. Support grooves corresponding to the plurality of protrusions are formed on the entire side surface.
  • a method for manufacturing a semiconductor crystal wafer according to a second aspect of the invention is a method for manufacturing a semiconductor crystal wafer in which wafers are sliced from a semiconductor crystal ingot ground into a cylindrical shape, a grooving step of forming a plurality of grooves extending around the entire side surface of the semiconductor crystal ingot; a cutting step of obtaining semiconductor crystal wafers by cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in the plurality of grooves formed in the groove processing step; with In the cutting step, when cutting the semiconductor crystal ingot into slices by making the plurality of wires arranged in the plurality of concave grooves formed in the groove processing step proceed while circulating, the wires and the semiconductor are cut into slices. supported by wire support portions that support the wire in the traveling direction at both ends of the contact portion with the crystal ingot; The wire supporting portion is characterized in that it advances along the side profile of the semiconductor crystal ingot.
  • a method for manufacturing a semiconductor crystal wafer according to a third aspect of the present invention is a method for manufacturing a semiconductor crystal wafer in which wafers are cut into slices from a semiconductor crystal ingot ground into a cylindrical shape, a grooving step of forming a plurality of grooves extending around the entire side surface of the semiconductor crystal ingot; a cutting step of obtaining semiconductor crystal wafers by cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in the plurality of grooves formed in the groove processing step; with In the cutting step, when cutting the semiconductor crystal ingot into slices by making the plurality of wires arranged in the plurality of concave grooves formed in the groove processing step proceed while circulating, the wires and the semiconductor are cut into slices. supported by wire support portions that support the wire in the traveling direction at both ends of the contact portion with the crystal ingot; The wire support part advances in conjunction with displacement of the wire in the advancing direction.
  • a method for manufacturing a semiconductor crystal wafer according to a fourth aspect of the present invention is a method for manufacturing a semiconductor crystal wafer in which wafers are sliced from a cylindrically ground semiconductor crystal ingot, comprising: In the grooving step for obtaining semiconductor crystal wafers by cutting the semiconductor crystal ingot into slices with a plurality of wires, When cutting the semiconductor crystal ingot into slices by advancing the plurality of wires while rotating them, the wires are supported by wire support portions that support the wires at both ends of the contact portion between the wires and the semiconductor crystal ingot.
  • the wire support portion includes a pair of clamping plates which are plates having a shape corresponding to both end faces of the semiconductor crystal ingot and clamp the both end faces, a guide portion formed on the outer circumference of the clamping plate, and the guide portion. and a rod running along the edge of the semiconductor crystal ingot, the rod supporting the wire and running along the side profile of the semiconductor crystal ingot.
  • a semiconductor crystal wafer manufacturing apparatus is a semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a semiconductor crystal ingot ground into a cylindrical shape, a drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a side surface formed with a plurality of protrusions corresponding to the plurality of grooves; a wire saw section for advancing and cutting a plurality of wires arranged in the plurality of grooves while rotating the semiconductor crystal ingot in which a plurality of grooves extending around the entire side surface are formed by the drum grindstone; a wire supporting portion that supports the wire in the traveling direction at both ends of the contact portion between the wire and the semiconductor crystal ingot of the wire saw portion;
  • the wire support portion is a pair of cylindrical rods arranged parallel to the axial direction of the semiconductor crystal ingot, and the pair of rods has a plurality of projections of the grooving drum grindstone on the entire side surface.
  • a semiconductor crystal wafer manufacturing apparatus is an apparatus for realizing the semiconductor crystal wafer manufacturing method according to the first aspect of the invention, and includes the semiconductor crystal wafer manufacturing method according to the first aspect of the invention and the semiconductor crystal wafer manufacturing method according to the fifth aspect of the invention.
  • a plurality of concave grooves are formed around the entire side surface of the semiconductor crystal ingot by a grooving drum grindstone having a plurality of convex portions formed on the side surface thereof.
  • the wires arranged in the plurality of grooves are rotated and advanced by the wire saw section, so that the semiconductor crystal ingot can be cut into slices with high precision by the wires using the grooves as guides.
  • a plurality of wires are simultaneously supported at the same position by using a pair of rods as the wire supporting portions. be able to.
  • support grooves corresponding to the plurality of projections of the groove processing drum grindstone are formed on the entire side surface of the rod.
  • the semiconductor crystal wafer manufacturing apparatus of the sixth invention is, in the fifth invention,
  • the wire support portion is characterized in that the rod body is rotatable via a bearing in a no-load state.
  • the rods are configured to be rotatable in a no-load state through bearings, so that the wires can be reliably supported while maintaining the circulating speed of the wires. can. In addition, it is possible to prevent the rod from being scraped by the wire.
  • the semiconductor crystal wafer manufacturing apparatus of the sixth invention it is possible to actually manufacture high-quality semiconductor crystal wafers simply, reliably and stably.
  • a semiconductor crystal wafer manufacturing apparatus is a semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a semiconductor crystal ingot ground into a cylindrical shape, a drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a side surface formed with a plurality of protrusions corresponding to the plurality of grooves; a wire saw section for advancing and cutting a plurality of wires arranged in the plurality of grooves while rotating the semiconductor crystal ingot in which a plurality of grooves extending around the entire side surface are formed by the drum grindstone; a wire supporting portion that supports the wire in the traveling direction at both ends of the contact portion between the wire and the semiconductor crystal ingot of the wire saw portion; The wire supporting portion is characterized in that it advances along the side profile of the semiconductor crystal ingot.
  • a semiconductor crystal wafer manufacturing apparatus of the seventh invention is an apparatus for realizing the semiconductor crystal wafer manufacturing method of the second invention, which is the semiconductor crystal wafer manufacturing method of the second invention and the semiconductor crystal wafer manufacturing of the seventh invention.
  • the wire support portions can be positioned at both ends of the contact portion between the wire and the semiconductor crystal ingot by advancing the wire support portions along the side profile of the semiconductor crystal ingot.
  • the semiconductor crystal wafer manufacturing method of the second invention and the semiconductor crystal wafer manufacturing apparatus of the seventh invention it is possible to actually manufacture high-quality semiconductor crystal wafers efficiently, easily, and reliably. realizable.
  • a semiconductor crystal wafer manufacturing apparatus of an eighth invention is a semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a semiconductor crystal ingot ground into a cylindrical shape, a drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a side surface formed with a plurality of protrusions corresponding to the plurality of grooves; a wire saw section for advancing and cutting a plurality of wires arranged in the plurality of grooves while rotating the semiconductor crystal ingot in which a plurality of grooves extending around the entire side surface are formed by the drum grindstone; a wire supporting portion that supports the wire in the traveling direction at both ends of the contact portion between the wire and the semiconductor crystal ingot of the wire saw portion; The wire supporting portion advances in conjunction with displacement of the wire saw portion in the advancing direction of the wire.
  • the semiconductor crystal wafer manufacturing apparatus of the eighth invention is an apparatus for realizing the semiconductor crystal wafer manufacturing method of the third invention, which is the semiconductor crystal wafer manufacturing method of the third invention and the semiconductor crystal wafer manufacturing of the eighth invention.
  • the device by interlocking the amount of displacement of the wire in the direction of travel and the amount of displacement of the wire support portion in the direction of travel, the positional relationship in the direction of travel can be maintained, and the wire is always stably supported by a constant support force. can be supported.
  • a semiconductor crystal wafer manufacturing apparatus is a semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a cylindrically ground semiconductor crystal ingot, a wire saw section for cutting the semiconductor crystal ingot by advancing a plurality of wires while rotating the semiconductor crystal ingot; a wire supporting portion that supports the wire at both ends of a contact portion between the wire of the wire saw portion and the semiconductor crystal ingot;
  • the wire support portion includes a pair of clamping plates which are plates having a shape corresponding to both end faces of the semiconductor crystal ingot and clamp the both end faces, a guide portion formed on the outer circumference of the clamping plate, and the guide portion. and a rod running along the edge of the semiconductor crystal ingot, the rod supporting the wire and running along the side profile of the semiconductor crystal ingot.
  • the semiconductor crystal wafer manufacturing apparatus of the ninth invention is an apparatus for realizing the semiconductor crystal wafer manufacturing method of the fourth invention, which is the semiconductor crystal wafer manufacturing method of the fourth invention and the semiconductor crystal wafer manufacturing of the ninth invention.
  • the device when a semiconductor crystal ingot is cut into slices by a plurality of wires, both ends of the contact portion of the wire with the ingot are supported by the rods of the wire support portion. It is possible to prevent bowing in and maintain a near-horizontal state.
  • the rods of the wire support portion along the side contour of the semiconductor crystal ingot through the guide portion, the rods can be always positioned at both ends of the contact portion between the wire and the semiconductor crystal ingot. can.
  • the semiconductor crystal wafer manufacturing apparatus of the tenth invention is, in the ninth invention,
  • the wire support section has a progression control section that advances the rod body in conjunction with advancement of the wire of the wire saw section.
  • the semiconductor crystal wafer manufacturing apparatus of the tenth invention by interlocking the movement of the wire with the movement of the bar of the wire support portion, the positional relationship in the direction of movement can be maintained, and the wire can always be held in a fixed position. It can be stably supported by the supporting force.
  • the semiconductor crystal wafer manufacturing apparatus of the eleventh invention is, in the tenth invention,
  • the semiconductor crystal ingot is ground into a cylindrical shape
  • the holding plate of the wire support part is a circular plate
  • the advance control section of the wire support section is a rotary table that is provided at a center of rotation where the rod advances circularly along the guide section and that is capable of adjusting rotational torque.
  • the rod when the rod rotates circularly along the guide portion formed on the outer circumference of the circular plate, by providing a rotary table for controlling the rotational torque,
  • the position of the rod can be precisely controlled by interlocking with the wire. Therefore, the rod can be pressed against the wire with a constant load.
  • the semiconductor crystal wafer manufacturing apparatus of the eleventh invention it is possible to easily, reliably and stably manufacture high-quality semiconductor crystal wafers.
  • the semiconductor crystal wafer manufacturing apparatus of the twelfth invention is any one of the ninth to eleventh inventions,
  • the bar of the wire support part is provided on one or both of the upper side and the lower side of the wire of the wire saw part.
  • the arrangement of the rods supporting the wires can be either above or below the wires as long as they are located at both ends of the contact portion between the wire and the ingot. , the wire is straightened to a near-horizontal state, and the wire can be prevented from bowing at the contact portion.
  • the semiconductor crystal wafer manufacturing apparatus of the twelfth invention it is possible to easily, reliably and stably manufacture high-quality semiconductor crystal wafers.
  • FIG. 4 is a flow chart showing the overall steps of a method for manufacturing a Si wafer (semiconductor crystal wafer) according to the present embodiment.
  • FIG. 2 is an explanatory diagram showing the details of a groove processing step in the method of manufacturing the Si wafer of FIG. 1;
  • FIG. 2 is an explanatory view showing the contents of a cutting step in the method of manufacturing the Si wafer of FIG. 1;
  • FIG. 2 is an explanatory diagram showing the contents of a first surface processing step and a second surface processing step in the Si wafer manufacturing method of FIG. 1;
  • the method for manufacturing a Si wafer which is a semiconductor crystal wafer, is a Si wafer obtained by cutting a Si ingot ground into a cylindrical shape into slices and removing undulations from one surface of the wafer. , comprising a grooving step (STEP 110/FIG. 1), a cutting step (STEP 120/FIG. 1), a first surface machining step (STEP 130/FIG. 1), and a second surface machining step (STEP 150/FIG. 1).
  • a cylindrical Si ingot 10 obtained by determining the crystal orientation and applying cylindrical grinding to the pre-crystallized Si crystal in the ingot processing step is prepared. .
  • a plurality of grooves 11 are formed around the entire side surface of the Si ingot 10 .
  • grooving drum grindstones 20 having convex portions 21 corresponding to the concave grooves 11 formed on the side surfaces are pressed against the Si ingot 10 while being rotated on rotating shafts parallel to each other. to form the recessed groove 11 .
  • the Si ingot 10 is cut into slices by a plurality of wires 31 arranged in the plurality of grooves 11 formed in the groove processing step to obtain Si wafers 100. .
  • the wire saw device which is a cutting device, causes the wire saw unit 30 to align the plurality of wires 31 with the plurality of grooves 11 formed in the grooving step, and rotate the wires 31. By moving forward, the Si ingot 10 is cut into slices.
  • a plurality of concave bobbin grooves corresponding to the plurality of protrusions 21 are formed on the entire side surface of the wire saw bobbin 32 around which the wire 31 is wound. Moreover, the Si ingot 10 is fitted and fixed to a slicing base (dummy plate) 35 into which the Si ingot 10 is fitted via an adhesive or the like.
  • the wire support parts 40 provided in the wire saw device support the wire 31 in the advancing direction at both ends of the contact part between the wire 31 and the Si ingot 10 .
  • the wire support part 40 is a pair of cylindrical rods 41, 41 arranged parallel to the axial direction of the Si ingot 10. At both ends of the rod 41, bearings for the rod 41 are provided. 42, 42 (eg, ball bearings, etc.) are provided. The bearings 42, 42 make the rod 41 rotatable in an unloaded state.
  • recessed support grooves corresponding to the plurality of protrusions 21 of the grooving drum grindstone 20 are formed on the entire side surface of the rod 41 .
  • the wire saw bobbin 32 of the wire saw section 30 and the rod 41 of the wire support section 40 are respectively supported by a frame (not shown) and frame operating means, and the wire 31 (wire saw bobbin 32) is as follows. and the wire support portion 40 move forward.
  • the wire support part 40 (rod body 41) advances so that the amount of displacement of the wire 31 in the direction of movement and the amount of displacement of the wire support part 40 in the direction of movement are interlocked. This maintains the positional relationship between the wire 31 and the wire support portion 40 (the rod 41) in the traveling direction.
  • the wire support portion 40 advances along the side profile of the Si ingot 10 .
  • the movement of the wire saw bobbin 32 and the wire support 40 may be stored in advance by teaching the frame movement means according to the size of the Si ingot 10. It may be configured to read out the motion data by selecting the progress of the motion.
  • a plurality of wires 31 can be simultaneously supported at the same position by the rod body 41 .
  • the rod 41 is configured to be rotatable in a no-load state through the bearing 42, the wire 31 can be reliably supported while maintaining the circulating speed of the wire 31. In addition, scraping of the rod 41 by the wire 31 can be prevented.
  • the rod 41 has support grooves identical to the concave grooves 11 of the Si ingot 10 formed on the entire side surface, and the wire saw bobbin 32 also has bobbin grooves identical to the concave grooves 11 formed therein. Therefore, the wire 31 can be reliably positioned in the recessed groove 11 by the bobbin groove, and the wire 31 can be reliably supported by the support groove without shifting laterally during cutting.
  • wire supporting portion 40 is advanced along the side contour of the Si ingot 10 while being interlocked with the displacement of the wire 31 of the wire saw portion 30 in the advancing direction, so that the contact portion between the wire and the Si ingot 10 is reduced.
  • Wire supports can always be positioned at both ends.
  • both ends of the contact portion of the wire 31 with the Si ingot 10 are always supported by the wire support portions 40, so that the wire 31 is prevented from arching at the contact portion and maintained in a nearly horizontal state. can do.
  • the Si ingot 10 can be precisely cut into slices in one operation by using the plurality of wires 31 that are accurately arranged in the plurality of grooves 11, and there is no need to perform another chamfering process.
  • one surface 110 of one of the cut surfaces is used as a support surface, and the remaining other surface 120 is subjected to mechanical polishing (high-precision grinding).
  • grinding is performed by a mechanical polishing device 50 (ultra-high synthetic high-precision grinding device) that performs mechanical polishing.
  • the mechanical polisher 50 includes a spindle 51 and a diamond grindstone 53 on a platen 52 which is a surface plate.
  • one surface 110 as the upper surface, it is attracted and supported by the vacuum porous chuck 54, which is the suction plate of the spindle 51, and the other surface 120 is ground with the diamond grindstone 53 with the other surface 120 as the lower surface.
  • the spindle 51 and the diamond grindstone 53 are rotationally driven by a drive device (not shown), and the spindle 51 is pressed against the diamond grindstone 53 by a compressor (not shown) or the like, whereby the remaining other surface 120 is ground. .
  • the diamond grindstone 53 may be dressed with a dresser or the like.
  • the mechanical polisher 50 may have functional water supply pipes so that a plurality of functional waters can be used during processing, if necessary.
  • the other surface 120 which has been subjected to high-precision grinding in the first surface machining step, is used as the upper surface, and the one surface 110 is subjected to high-precision grinding similar to the first surface machining step. Grinding is applied.
  • the other surface 120 as the upper surface, it is attracted to the vacuum porous chuck 54 that is the suction plate of the spindle 51, and the one surface 110 is ground with the diamond grindstone 53 with the one surface 110 as the lower surface.
  • dressing may be applied by pressing a dresser or the like against the diamond grindstone 53 as necessary.
  • either one of the cut surfaces having high flatness obtained by the cutting step can be used as a support surface.
  • mechanical polishing high-precision grinding
  • the remaining surfaces as the (adsorption surface)
  • it is possible to greatly simplify the complicated manufacturing process such as multiple times of primary to quaternary lapping.
  • the size of the Si wafer 100 is currently up to 8 inches, and the diameter of each wafer depends on the area of the head. It is then set (possibly up to 12 inches) and subjected to the precision grinding process.
  • Si wafer manufacturing method of the present embodiment As described above in detail, according to the Si wafer manufacturing method of the present embodiment, a high-quality Si wafer can be manufactured easily and reliably.
  • FIG. 6 Another aspect of the cutting step in STEP 110 will be described with reference to FIGS. 6 and 7.
  • FIG. 6 Another aspect of the cutting step in STEP 110 will be described with reference to FIGS. 6 and 7.
  • the wire support portion 40' includes a pair of rods 41', 41', an arm 42', a guide receiving portion 43', a holding plate 44', a guide portion 45', and a rotary table 46'.
  • the rod 41' is a cylindrical rod arranged parallel to the axial direction of the Si ingot 10, and both ends of the rod 41' are pivoted by arms 42'. It is preferable that a bearing such as a ball bearing is provided between the rod 41' and the arm 42' so that the rod 41' can rotate freely in an unloaded state.
  • Disc-shaped guide receiving portions 43' are provided at both ends of the rod 41', and the rod 41' is configured to pass through the guide receiving portions 43'.
  • a bearing such as a ball bearing is provided between the guide receiving portion 43' and the rod 41' so that the rod 41' is rotatable in an unloaded state.
  • the clamping plate 44' is a circular plate corresponding to both end faces of the Si ingot 10 and clamps the both end faces.
  • the guide portion 45' is formed on the outer periphery of the clamping plate 44', and when the guide receiving portion 42' of the rod 41' abuts thereon, the rod 41' is moved to the clamping plate 44' via the guide receiving portion 42'. Helps progress along the perimeter.
  • the guide portion 45' and the guide receiving portion 43' may be provided with grooves on one side and projections on the other side so as to ensure the movement in the circumferential direction.
  • a groove is provided in the guide portion 45' (the side surface of the clamping plate 44'), and a projection extending along the outer periphery is provided in the guide receiving portion 43'.
  • the rotary table 46' (corresponding to the advance control section of the present invention) is a rotation control device capable of adjusting rotational torque, and controls the rotation of the arm 42'. That is, when the rod 41' advances circularly along the guide portion 45', the central axis of rotation is connected to the control shaft 46A' of the rotary table 46'.
  • the rotational torque can be adjusted by the air pressure (inflow and outflow of air) of the two ducts 46B', 46B'.
  • rotary table 46' is screwed by a screw 46C' passing through the frame 47' and integrated with the frame (see FIG. 7).
  • the pair of rods 41 ′, 41 ′ are provided above the wire 31 , and when the Si ingot 10 is cut by the plurality of wires 31 circulating through the wire saw bobbin 32 , the wire Both ends of the contact portion of 31 with the Si ingot 10 are abutted and supported from above to prevent the wire 31 from winding around the Si ingot 10 and bowing at the contact portion to maintain a nearly horizontal state. can do.
  • the rotary table 46' adjusts the air pressure of the two ducts 46B', 46B' in accordance with the advance of the wire saw device 30 (upward advance in the drawing (cutting speed)), thereby controlling the control shaft 46A'. is rotated to advance the rod 41' around the circumference of the clamping plate 44' via the arm 42'.
  • the position of the rod 41' can be interlocked with the wire 31 and accurately controlled, and the rod 41' can be pressed against the wire 31 with a constant load.
  • the rotary table 46' may advance the rod according to a certain load from the wire 31 (in the case of exceeding the specified load value) (instead of actively rotating the control shaft 46A'). good. Thereby, the rod can be pressed against the wire with a constant load, and the movement of the wire and the rod may be interlocked.
  • the pair of rods 41', 41' are arranged below the wire 31 instead of being provided above the setting wire 31 so that the wire 31 is supported by the rod 41', thereby You may make it suppress the slack to.
  • the arm 42' is extended, and another set of rods (wire 31) is attached to the tip of the extended arm. ) may be provided, and both ends of the contact portion of the wire 31 with the Si ingot 10 may be abutted and supported from above and below.
  • concave support grooves corresponding to the plurality of convex portions 21 of the grooving drum grindstone 20 are formed on the entire side surface of the rod 41'.
  • FIG. 7 shows, from the left in chronological order, the start of cutting, the beginning of cutting, and the end of cutting.
  • CMP chemical mechanical polishing
  • the semiconductor crystal is not limited to Si, and the semiconductor crystal may be, for example, silicon carbide. (SiC), gallium hexagonal, indium phosphide, and other compound semiconductors.
  • SYMBOLS 1 Si crystal (semiconductor crystal), 10... Si ingot (semiconductor crystal ingot), 11... Groove, 20... Grooving drum grindstone, 21... Convex part, 30... Wire saw part (wire saw device), 31... Wire , 32... Wire saw bobbin, 35... Base for slicing, 40, 40'... Wire support part (wire saw device), 41, 41'... Rod body, 42... Bearing, 42'... Arm, 43'... Guide receiving part (convex part), 44'... clamping plate, 45'... guide part (groove part), 46'... rotary table, 46A'... control shaft, 46B'... duct, 46C'... screw, 47'... frame, 50...

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Le but de la présente invention est de fournir un procédé et un appareil pour produire une tranche de cristal semi-conducteur, le procédé et l'appareil étant capables de produire en toute facilité et fiabilité une tranche de cristal semi-conducteur de haute qualité. Un procédé de production d'une tranche de cristal semi-conducteur selon la présente invention permet d'obtenir une tranche de Si qui est obtenue par tranchage d'un lingot de Si, qui a été broyé en une forme cylindrique, en tranches de Si, la surface de chaque tranche de Si étant soumise à un broyage de haute précision. Ce procédé de production d'une tranche de cristal semi-conducteur comprend : une étape de traitement de rainure (ÉTAPE 100 sur FIG. 1) ; une étape de découpe et de polissage (ÉTAPE 200 sur FIG. 1) ; une première étape de traitement de surface (ÉTAPE 300 sur la FIG. 1) ; et une seconde étape de traitement de surface (ÉTAPE 400 sur FIG. 1).
PCT/JP2022/028053 2021-12-23 2022-07-19 Procédé et appareil de production de tranche de cristal semi-conducteur WO2023119703A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021209574A JP7100864B1 (ja) 2021-12-23 2021-12-23 半導体結晶ウェハの製造方法および製造装置
JP2021-209574 2021-12-23
JP2022-067973 2022-04-18
JP2022067973A JP7104909B1 (ja) 2022-04-18 2022-04-18 半導体結晶ウェハの製造方法および製造装置

Publications (1)

Publication Number Publication Date
WO2023119703A1 true WO2023119703A1 (fr) 2023-06-29

Family

ID=86692398

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/028053 WO2023119703A1 (fr) 2021-12-23 2022-07-19 Procédé et appareil de production de tranche de cristal semi-conducteur

Country Status (2)

Country Link
TW (1) TWI795330B (fr)
WO (1) WO2023119703A1 (fr)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548930A (en) * 1978-10-02 1980-04-08 Nippon Telegr & Teleph Corp <Ntt> Automatic wafer cutting method
JP2000153517A (ja) * 1998-11-20 2000-06-06 Tokyo Seimitsu Co Ltd ワイヤソー
JP2002307283A (ja) * 2001-04-19 2002-10-23 Shin Etsu Handotai Co Ltd ワイヤーソー
JP2006305685A (ja) * 2005-04-28 2006-11-09 Komatsu Electronic Metals Co Ltd ワイヤソー装置およびワイヤソー装置用のガイドバー並びにワイヤソー装置用のスラリ供給装置。
JP2010099808A (ja) * 2008-10-27 2010-05-06 Sumitomo Metal Fine Technology Co Ltd ワイヤソー装置
JP2011526215A (ja) * 2008-06-30 2011-10-06 ショット ソーラー アーゲー ワイヤーソー切断装置
JP2012250328A (ja) * 2011-06-03 2012-12-20 Sharp Corp ワイヤソー装置およびワーク切断方法、ウエハの製造方法
JP2014097542A (ja) * 2012-11-13 2014-05-29 Mitsubishi Electric Corp ワイヤ放電加工装置とその方法、薄板製造方法および半導体ウエハ製造方法
JP2016074068A (ja) * 2014-10-08 2016-05-12 株式会社ディスコ スライス方法
JP2020053610A (ja) * 2018-09-28 2020-04-02 住友金属鉱山株式会社 ウエハの製造方法、及び、ウエハの押さえ治具

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09290358A (ja) * 1996-04-25 1997-11-11 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法および半導体インゴットの面 取り加工装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548930A (en) * 1978-10-02 1980-04-08 Nippon Telegr & Teleph Corp <Ntt> Automatic wafer cutting method
JP2000153517A (ja) * 1998-11-20 2000-06-06 Tokyo Seimitsu Co Ltd ワイヤソー
JP2002307283A (ja) * 2001-04-19 2002-10-23 Shin Etsu Handotai Co Ltd ワイヤーソー
JP2006305685A (ja) * 2005-04-28 2006-11-09 Komatsu Electronic Metals Co Ltd ワイヤソー装置およびワイヤソー装置用のガイドバー並びにワイヤソー装置用のスラリ供給装置。
JP2011526215A (ja) * 2008-06-30 2011-10-06 ショット ソーラー アーゲー ワイヤーソー切断装置
JP2010099808A (ja) * 2008-10-27 2010-05-06 Sumitomo Metal Fine Technology Co Ltd ワイヤソー装置
JP2012250328A (ja) * 2011-06-03 2012-12-20 Sharp Corp ワイヤソー装置およびワーク切断方法、ウエハの製造方法
JP2014097542A (ja) * 2012-11-13 2014-05-29 Mitsubishi Electric Corp ワイヤ放電加工装置とその方法、薄板製造方法および半導体ウエハ製造方法
JP2016074068A (ja) * 2014-10-08 2016-05-12 株式会社ディスコ スライス方法
JP2020053610A (ja) * 2018-09-28 2020-04-02 住友金属鉱山株式会社 ウエハの製造方法、及び、ウエハの押さえ治具

Also Published As

Publication number Publication date
TW202325925A (zh) 2023-07-01
TWI795330B (zh) 2023-03-01

Similar Documents

Publication Publication Date Title
US4054010A (en) Apparatus for grinding edges of planar workpieces
US20060258268A1 (en) Manufacturing method for semiconductor wafers, slicing method for slicing work and wire saw used for the same
WO2023112345A1 (fr) Dispositif de fabrication de tranche de cristal semi-conducteur et procédé de fabrication
JP7481518B2 (ja) ツルーイング方法及び面取り装置
JP2010214550A (ja) シリコンインゴットの面取り加工装置およびそれを用いる角柱状シリコンインゴットの面取り加工方法
CN108262678B (zh) 一种硅片研磨装置及其研磨方法
CN111630213A (zh) 单晶4H-SiC生长用籽晶及其加工方法
JP2016203342A (ja) ツルーアーの製造方法および半導体ウェーハの製造方法、ならびに半導体ウェーハの面取り加工装置
JP3924641B2 (ja) 半導体ウェーハの製造方法
WO2005070619A1 (fr) Procede de rectification d&#39;une tranche et tranche
US6537139B2 (en) Apparatus and method for ELID grinding a large-diameter workpiece to produce a mirror surface finish
WO2023119703A1 (fr) Procédé et appareil de production de tranche de cristal semi-conducteur
JP7104909B1 (ja) 半導体結晶ウェハの製造方法および製造装置
JP7072180B1 (ja) 半導体結晶ウェハの製造方法および製造装置
JPH08197400A (ja) 半導体ウェーハの面取り部研磨方法
JP7100864B1 (ja) 半導体結晶ウェハの製造方法および製造装置
JP7007625B1 (ja) 半導体結晶ウェハの製造方法および製造装置
JP7041931B1 (ja) 半導体結晶ウェハの製造方法および製造装置
WO2023053476A1 (fr) Procédé et appareil de production de tranche de cristal semi-conducteur
JP7041932B1 (ja) 半導体結晶ウェハの製造方法および製造装置
JP7243996B1 (ja) 半導体結晶ウェハの製造装置および製造方法
JP7260889B1 (ja) 半導体結晶ウェハの製造装置および製造方法
JPH07100737A (ja) 半導体ウエーハの研磨方法
JP7398852B1 (ja) 半導体結晶ウェハの製造装置および製造方法
JP7158701B2 (ja) 面取り研削装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22910433

Country of ref document: EP

Kind code of ref document: A1