WO2023108719A1 - 显示面板及其制备方法 - Google Patents
显示面板及其制备方法 Download PDFInfo
- Publication number
- WO2023108719A1 WO2023108719A1 PCT/CN2021/140089 CN2021140089W WO2023108719A1 WO 2023108719 A1 WO2023108719 A1 WO 2023108719A1 CN 2021140089 W CN2021140089 W CN 2021140089W WO 2023108719 A1 WO2023108719 A1 WO 2023108719A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- boundary
- getter
- graphene
- display panel
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 286
- 239000012044 organic layer Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 89
- 229910021389 graphene Inorganic materials 0.000 claims description 73
- 238000005538 encapsulation Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 36
- 239000002105 nanoparticle Substances 0.000 claims description 32
- 239000003575 carbonaceous material Substances 0.000 claims description 30
- 125000003636 chemical group Chemical group 0.000 claims description 27
- 238000005247 gettering Methods 0.000 claims description 25
- 239000002041 carbon nanotube Substances 0.000 claims description 16
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 16
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- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract 3
- 239000002245 particle Substances 0.000 description 20
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- 239000004054 semiconductor nanocrystal Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
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- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
- MMZYCBHLNZVROM-UHFFFAOYSA-N 1-fluoro-2-methylbenzene Chemical compound CC1=CC=CC=C1F MMZYCBHLNZVROM-UHFFFAOYSA-N 0.000 description 2
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical class C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical class [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical class [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical class [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- 125000001033 ether group Chemical group 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 150000002290 germanium Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical class [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
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- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004626 polylactic acid Substances 0.000 description 2
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- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical class [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- GTLQJUQHDTWYJC-UHFFFAOYSA-N zinc;selenium(2-) Chemical class [Zn+2].[Se-2] GTLQJUQHDTWYJC-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
Definitions
- the present application relates to the field of display technology, in particular to a display panel and a manufacturing method thereof.
- Embodiments of the present application provide a display panel and a manufacturing method thereof, which can absorb the gas released from the organic layer in the encapsulation layer and reduce the risk of bad black spots.
- An embodiment of the present application provides a display panel, which includes:
- At least one encapsulation layer comprising:
- the getter layer is disposed on the first inorganic layer
- the material of the getter layer includes getter graphene, and the getter graphene is formed by bonding graphene-based carbon materials and getter nanoparticles through chemical groups; the graphene-based carbon materials are connected by the Chemical group bonding set.
- the graphene-based carbon material includes at least one of graphene and carbon nanotubes.
- the getter layer further includes a resin and a photoinitiator.
- the getter nanoparticles have a porous structure.
- the first inorganic layer includes a first boundary
- the getter layer includes a second boundary
- the organic layer includes a third boundary
- the second inorganic layer includes a fourth boundary
- the third boundary is set inside the second boundary
- the second boundary is set inside the first boundary
- the second inorganic layer is respectively connected to the second boundary and the third boundary; the fourth boundary is located outside the first boundary or coincides with the first boundary.
- the distance from the first boundary to the second boundary is greater than the distance from the second boundary to the third boundary.
- a groove is formed on a side of the getter layer facing the organic layer, and the organic layer fills the groove.
- the getter nanoparticles are molecular sieves or nano metal organic framework molecules.
- the embodiment of the present application also provides a display panel, which includes:
- At least one encapsulation layer comprising:
- the getter layer is disposed on the first inorganic layer
- a second inorganic layer covers the organic layer and the getter layer and is connected to the first inorganic layer.
- the material of the gettering layer includes gettering graphene, and the gettering graphene is formed by bonding graphene-based carbon materials and gettering nanoparticles through chemical groups .
- the graphene-based carbon materials are arranged through the chemical group bonding.
- a groove is formed on a side of the getter layer facing the organic layer, and the organic layer fills the groove.
- the graphene-based carbon material includes at least one of graphene and carbon nanotubes.
- the getter layer further includes a resin and a photoinitiator.
- the getter nanoparticles have a porous structure.
- the first inorganic layer includes a first boundary
- the getter layer includes a second boundary
- the organic layer includes a third boundary
- the second inorganic layer includes a fourth boundary
- the third boundary is set inside the second boundary
- the second boundary is set inside the first boundary
- the second inorganic layer is respectively connected to the second boundary and the third boundary; the fourth boundary is located outside the first boundary or coincides with the first boundary.
- the distance from the first boundary to the second boundary is greater than the distance from the second boundary to the third boundary.
- the present application also relates to a method for preparing a display panel, which includes the following steps:
- the forming at least one encapsulation layer on the light emitting device layer includes the following steps:
- a second inorganic layer is formed on the organic layer, the second inorganic layer covers the organic layer and the getter layer and is connected to the first inorganic layer.
- forming a getter layer on the first inorganic layer includes the following steps:
- the graphene-based carbon material includes at least one of graphene and carbon nanotubes.
- the light-emitting device layer is arranged on the substrate, and the encapsulation layer covers the light-emitting device layer and the substrate;
- the encapsulation layer includes a first inorganic layer, a getter layer, an organic layer and a second inorganic layer, and the first inorganic layer
- the light-emitting device layer is covered;
- the getter layer is arranged on the first inorganic layer;
- the organic layer is arranged on the getter layer;
- the second inorganic layer covers the organic layer and the getter layer and is connected with the first inorganic layer.
- a getter layer is formed in the encapsulation layer to absorb the gas released from the organic layer, which reduces the amount of gas in the encapsulation layer, thereby reducing the risk of the gas breaking through the inorganic layer, and Preventing external water and oxygen from invading the light-emitting device layer when the first inorganic layer is damaged by foreign matter.
- FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the present application.
- Fig. 2 is a schematic structural diagram of the getter graphene of the display panel provided by the embodiment of the present application;
- FIG. 3 is a schematic flow chart of a method for preparing a display panel provided in an embodiment of the present application
- Fig. 4 is a schematic structural diagram of Step B1 in the method for preparing a display panel provided in the embodiment of the present application;
- FIG. 5 is a schematic structural diagram of step B2 in the method for manufacturing a display panel provided by the embodiment of the present application.
- Embodiments of the present application provide a display panel and a manufacturing method thereof, which will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments.
- an embodiment of the present application provides a display panel 100 , which includes a substrate 11 , a light emitting device layer 12 and at least one encapsulation layer 13 .
- the light emitting device layer 12 is disposed on the substrate 11 .
- the encapsulation layer 13 covers the light emitting device layer 12 and the substrate 11 .
- the encapsulation layer 13 includes a first inorganic layer 131 , a getter layer 132 , an organic layer 133 and a second inorganic layer 134 .
- the first inorganic layer 131 covers the light emitting device layer 12 .
- the gettering layer 132 is disposed on the first inorganic layer 131 .
- the organic layer 133 is disposed on the getter layer 132 .
- the second inorganic layer 134 covers the organic layer 133 and the getter layer 132 and is connected to the first inorganic layer 131 .
- the getter layer 132 is formed in the encapsulation layer 13 to absorb the gas released by the organic layer 133, which reduces the amount of gas in the encapsulation layer 13 and also reduces the risk of the gas breaking through the inorganic layer. And prevent the outside water and oxygen from invading the light-emitting device layer when the first inorganic layer is damaged by foreign matter, thereby reducing the formation of black spots.
- the substrate 11 includes a substrate and thin film transistors disposed on the substrate.
- the substrate can be a rigid substrate or a flexible substrate.
- Substrate materials include glass, sapphire, silicon, silicon dioxide, polyethylene, polypropylene, polystyrene, polylactic acid, polyethylene dicarboxylate, polyethylene terephthalate, polyethylene naphthalate
- glycol resin, polycarbonate, polyethersulfone, aromatic fluorotoluene containing polyarylate, polycyclic olefin, polyimide or polyurethane One of glycol resin, polycarbonate, polyethersulfone, aromatic fluorotoluene containing polyarylate, polycyclic olefin, polyimide or polyurethane.
- the light emitting device layer 12 includes a first electrode, a light emitting layer and a second electrode disposed on the substrate 11 in sequence.
- the light emitting device layer 12 may be a top emission type or a bottom emission type.
- one of the first electrode and the second electrode is a reflective electrode, and the other is a transparent electrode.
- the material of the light-emitting layer can be an organic material, such as Alq3, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), DPVBi, Almq3, 3-tert-butyl-9,10-bis(2-naphthalene)anthracene (TBADN).
- organic material such as Alq3, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), DPVBi, Almq3, 3-tert-butyl-9,10-bis(2-naphthalene)anthracene (TBADN).
- the material of the light-emitting layer can also be an inorganic material, for example, it can be selected from group IV semiconductor nanocrystals, II-V group semiconductor nanocrystals, II-VI group semiconductor nanocrystals, IV-VI group semiconductor nanocrystals, III-V group semiconductor nanocrystals, etc. One or more of nanocrystals and III-VI semiconductor nanocrystals, etc.
- it can be silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots One or more of quantum dots, indium arsenide quantum dots, gallium nitride quantum dots, etc.
- the number of layers of the encapsulation layer 13 may be one layer or multiple layers.
- the materials of the first inorganic layer 131 and the second inorganic layer 134 may be selected from at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, and magnesium oxide.
- the material of the first inorganic layer 131 may also be other metal oxides.
- the material of the gettering layer 132 includes gettering graphene xs.
- Getter graphene xs is formed by bonding graphene-based carbon material sm and getter nanoparticles xq through chemical groups.
- the graphene-based carbon material sm includes at least one of graphene and carbon nanotubes.
- graphene is used as the material of the getter layer 132 . Since graphene has an excellent water and oxygen barrier property, the water and oxygen barrier performance of the getter layer 132 is improved. In addition, the graphene-bonded getter nanoparticles improve the dispersibility of graphene. In the microstructure, a spacer structure of layered graphene and getter nanoparticles is formed, which can effectively absorb the gas released by the organic layer 133 . Secondly, graphene has good ductility and can be used as a stress release layer to reduce the damage to the inorganic layer caused by the curing shrinkage of the organic layer and thermal expansion.
- the chemical group may be an oxygen-containing group such as an epoxy group, an ether group or an ester group, or a hydrogen-containing group or a fluorine-containing group.
- the surface of the graphene-based carbon material sm can be connected with at least one gettering nanoparticle xq through a chemical group.
- the surface of the graphene-based carbon material sm can be connected with at least one gettering nanoparticle xq through a chemical group.
- a getter nanoparticle xq can also connect at least one graphene-based carbon material sm particle through a chemical group, for example, a getter nanoparticle xq bonds two graphene through two chemical groups particle.
- Graphene-based carbon materials sm can also be bonded together through chemical groups.
- graphene particles are bonded to carbon nanotube particles through chemical groups; at least two graphene particles are bonded together through chemical groups; or at least two carbon nanotube particles are bonded together through chemical groups.
- the graphene-based carbon material sm includes graphene and carbon nanotubes; the graphene particles are bonded to the carbon nanotube particles, and the graphene particles are bonded to the getter nanoparticles xq.
- the gettering nanoparticles xq have a porous structure, so as to improve the performance of the gettering layer 132 for absorbing gas.
- getter nanoparticles xq may also not be a porous material.
- the getter nanoparticles xq may be particles such as molecular sieves or nano metal organic framework molecules.
- the getter layer 132 also includes a resin sz and a photoinitiator. That is, the gettering graphene xs, the resin, and the photoinitiator are mixed together to form the gettering layer 132 .
- the resin sz may be epoxy resin or acrylic resin or the like.
- grooves are formed on a side of the getter layer 132 facing the organic layer 133 .
- the organic layer 133 fills the grooves. Forming grooves on the getter layer 132 improves the flexibility of the getter layer 132 on the one hand, and increases the contact area between the organic layer 133 and the getter layer 132 on the other hand, thereby improving the release of the getter layer 132 from absorbing the organic layer. The efficiency of the gas is improved, and the stability of the connection between the gettering layer 132 and the organic layer 133 is improved.
- the viscosity of the material of the getter layer 132 is between 100cps and 500cps, such as 100cps, 200cps, 300cps, 400cps or 500cps.
- the thickness of the getter layer 132 is less than 5 microns, such as 4 microns, 3 microns, 2 microns or 1 micron.
- the first inorganic layer 131 includes a first boundary 13a.
- the getter layer 132 includes the second boundary 13b.
- the organic layer 133 includes a third boundary 13c.
- the second inorganic layer 134 includes a fourth boundary 13d.
- the third boundary 13c is disposed inside the second boundary 13b.
- the second border 13b is disposed inside the first border 13a.
- the second inorganic layer 134 is connected to the second boundary 13b and the third boundary 13c, respectively.
- the fourth boundary 13d is located outside the first boundary 13a or coincides with the first boundary 13a.
- the distance from the first boundary 13a to the second boundary 13b is greater than the distance from the second boundary 13b to the third boundary 13c.
- Such an arrangement further improves the stability of the encapsulation layer 13 .
- the present application also relates to a method for manufacturing a display panel 100, which includes the following steps:
- Step B1 forming a light emitting device layer on the substrate
- Step B2 forming at least one encapsulation layer on the light emitting device layer
- the forming at least one encapsulation layer on the light emitting device layer includes the following steps:
- Step B21 forming a first inorganic layer on the light emitting device layer
- Step B22 forming a getter layer on the first inorganic layer
- Step B23 forming an organic layer on the getter layer
- Step B24 forming a second inorganic layer on the organic layer, the second inorganic layer covers the organic layer and the getter layer and is connected to the first inorganic layer.
- a getter layer is formed in the encapsulation layer to absorb the gas released from the organic layer, which reduces the amount of gas in the encapsulation layer, thereby reducing the risk of the gas breaking through the inorganic layer.
- the manufacturing method of the display panel 100 will be described below. It should be noted that this preparation method is used to prepare the display panel 100 of the above-mentioned embodiment.
- a light emitting device layer 12 is formed on a substrate 11 .
- the substrate 11 includes a substrate and thin film transistors disposed on the substrate.
- the substrate can be a rigid substrate or a flexible substrate.
- Substrate materials include glass, sapphire, silicon, silicon dioxide, polyethylene, polypropylene, polystyrene, polylactic acid, polyethylene dicarboxylate, polyethylene terephthalate, polyethylene naphthalate
- glycol resin, polycarbonate, polyethersulfone, aromatic fluorotoluene containing polyarylate, polycyclic olefin, polyimide or polyurethane One of glycol resin, polycarbonate, polyethersulfone, aromatic fluorotoluene containing polyarylate, polycyclic olefin, polyimide or polyurethane.
- the light emitting device layer 12 includes a first electrode, a light emitting layer and a second electrode disposed on the substrate 11 in sequence.
- the light emitting device layer 12 may be a top emission type or a bottom emission type.
- one of the first electrode and the second electrode is a reflective electrode, and the other is a transparent electrode.
- the material of the light-emitting layer can be an organic material, such as Alq3, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), DPVBi, Almq3, 3-tert-butyl-9,10-bis(2-naphthalene)anthracene (TBADN).
- organic material such as Alq3, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), DPVBi, Almq3, 3-tert-butyl-9,10-bis(2-naphthalene)anthracene (TBADN).
- the material of the light-emitting layer can also be an inorganic material, for example, it can be selected from group IV semiconductor nanocrystals, II-V group semiconductor nanocrystals, II-VI group semiconductor nanocrystals, IV-VI group semiconductor nanocrystals, III-V group semiconductor nanocrystals, etc. One or more of nanocrystals and III-VI semiconductor nanocrystals, etc.
- it can be silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots One or more of quantum dots, indium arsenide quantum dots, gallium nitride quantum dots, etc.
- step B2 at least one encapsulation layer 13 is formed on the light emitting device layer 12 .
- Step B2 includes the following steps:
- Step B21 forming a first inorganic layer 131 on the light emitting device layer 12 .
- the material of the first inorganic layer 131 may be selected from at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, and magnesium oxide.
- the material of the first inorganic layer 131 may also be other metal oxides. Then go to step B22.
- Step B22 forming a getter layer 132 on the first inorganic layer 131 .
- step B22 comprises the following steps:
- Step B221 Bonding graphene-based carbon material sm and getter nanoparticles xq through chemical groups to form getter graphene xs.
- the graphene-based carbon material sm includes at least one of graphene and carbon nanotubes.
- the chemical group may be an oxygen-containing group such as an epoxy group, an ether group or an ester group, or a hydrogen-containing group or a fluorine-containing group.
- the surface of the graphene-based carbon material sm can be connected with at least one gettering nanoparticle xq through a chemical group.
- the surface of the graphene-based carbon material sm can be connected with at least one gettering nanoparticle xq through a chemical group.
- a getter nanoparticle xq can also connect at least one graphene-based carbon material sm particle through a chemical group, for example, a getter nanoparticle xq bonds two graphene through two chemical groups particle.
- Graphene-based carbon materials sm can also be bonded together through chemical groups.
- graphene particles are bonded to carbon nanotube particles through chemical groups; at least two graphene particles are bonded together through chemical groups; or at least two carbon nanotube particles are bonded together through chemical groups.
- the graphene-based carbon material sm includes graphene and carbon nanotubes; the graphene particles are bonded to the carbon nanotube particles, and the graphene particles are bonded to the getter nanoparticles xq.
- the gettering nanoparticles xq have a porous structure, so as to improve the performance of the gettering layer 132 for absorbing gas.
- getter nanoparticles xq may also not be a porous material.
- the getter nanoparticles xq may be particles such as molecular sieves or nano metal organic framework molecules.
- Step B222 mixing the getter graphene xs, the resin sz and the photoinitiator to form a mixed material.
- the viscosity of the mixed material is between 100cps and 500cps, such as 100cps, 200cps, 300cps, 400cps or 500cps.
- Step B223 coating the mixed material on the first inorganic layer 131 to form a mixed material layer.
- the mixed material layer can be formed on the first inorganic layer 131 by means of spin coating or inkjet printing.
- Step B24 curing the mixed material layer to form the getter layer 132 .
- the mixed material layer can be cured by ultraviolet light, and the mixed material layer can be baked to form the getter layer 132 .
- Step B23 forming an organic layer 133 on the getter layer 132 .
- Step B24 forming the second inorganic layer 134 on the organic layer 133 .
- the second inorganic layer 134 covers the organic layer 133 and the getter layer 132 and is connected to the first inorganic layer 131 .
- the material of the second inorganic layer 134 may be selected from at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, and magnesium oxide.
- the material of the second inorganic layer 134 may also be other metal oxides.
- the light emitting device layer is arranged on the substrate, and the encapsulation layer covers the light emitting device layer and the substrate;
- the encapsulation layer includes a first inorganic layer, a getter layer, an organic layer and a second inorganic layer,
- the first inorganic layer covers the light-emitting device layer;
- the getter layer is arranged on the first inorganic layer;
- the organic layer is arranged on the getter layer;
- the second inorganic layer covers the organic layer and the getter layer and is connected with the first inorganic layer.
- a getter layer is formed in the encapsulation layer to absorb the gas released from the organic layer, which reduces the amount of gas in the encapsulation layer, thereby reducing the risk of the gas breaking through the inorganic layer.
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Abstract
一种显示面板(100)及其制备方法,显示面板(100)包括基板(11)、发光器件层(12)和至少一封装层(13)。发光器件层(12)设置在基板(11),封装层(13)覆盖发光器件层(12)和基板(11);封装层(13)包括第一无机层(131)、吸气层(132)、有机层(133)和第二无机层(134),第一无机层(131)覆盖发光器件层(12);吸气层(132)设置在第一无机层(131)上;有机层(133)设置在吸气层(132)上;第二无机层(134)覆盖有机层(133)和吸气层(132)并与第一无机层(131)相连。
Description
本申请涉及显示技术领域,具体涉及一种显示面板及其制备方法。
在对现有技术的研究和实践过程中,本申请的发明人发现,目前有机发光二极管(Organic Light-Emitting Diode,OLED)面板量产中常见的不良黑点严重影响产品品质,通过解析大宗成因为异物导致无机封装层破裂,有机封装层中释放的气体以及外界水汽从裂缝中侵入损伤阴极及OLED材料,形成点状发光异常。
本申请实施例提供一种显示面板及其制备方法,可以吸收封装层中有机层释放的气体,降低不良黑点的风险。
本申请实施例提供一种显示面板,其包括:
基板;
发光器件层,所述发光器件层设置在所述基板;以及
至少一封装层,所述封装层包括:
第一无机层,所述第一无机层覆盖所述发光器件层;
吸气层,所述吸气层设置在所述第一无机层上;
有机层,所述有机层设置在所述吸气层上;以及
第二无机层,所述第二无机层覆盖所述有机层和所述吸气层并与所述第一无机层相连;
所述吸气层的材料包括吸气石墨烯,所述吸气石墨烯由石墨烯基碳材料和吸气纳米粒子通过化学基团键合形成;所述石墨烯基碳材料之间通过所述化学基团键合设置。
可选的,在本申请的一些实施例中,所述石墨烯基碳材料包括石墨烯和碳纳米管中的至少一种。
可选的,在本申请的一些实施例中,所述吸气层还包括树脂和光引发剂。
可选的,在本申请的一些实施例中,所述吸气纳米粒子为多孔结构。
可选的,在本申请的一些实施例中,所述第一无机层包括第一边界,所述吸气层包括第二边界,所述有机层包括第三边界,所述第二无机层包括第四边界,所述第三边界设置在所述第二边界的内侧,所述第二边界设置在所述第一边界的内侧;
所述第二无机层分别与所述第二边界和所述第三边界相连;所述第四边界位于所述第一边界的外侧或与所述第一边界重合。
可选的,在本申请的一些实施例中,所述第一边界到所述第二边界的距离大于所述第二边界到所述第三边界的距离。
可选的,在本申请的一些实施例中,所述吸气层面向所述有机层的一侧形成有凹槽,所述有机层填充所述凹槽。
可选的,在本申请的一些实施例中,所述吸气纳米粒子为分子筛或纳米金属有机框架分子。
本申请实施例还提供一种显示面板,其包括:
基板;
发光器件层,所述发光器件层设置在所述基板;以及
至少一封装层,所述封装层包括:
第一无机层,所述第一无机层覆盖所述发光器件层;
吸气层,所述吸气层设置在所述第一无机层上;
有机层,所述有机层设置在所述吸气层上;以及
第二无机层,所述第二无机层覆盖所述有机层和所述吸气层并与所述第一无机层相连。
可选的,在本申请的一些实施例中,所述吸气层的材料包括吸气石墨烯,所述吸气石墨烯由石墨烯基碳材料和吸气纳米粒子通过化学基团键合形成。
可选的,在本申请的一些实施例中,所述石墨烯基碳材料之间通过所述化学基团键合设置。
可选的,在本申请的一些实施例中,所述吸气层面向所述有机层的一侧形成有凹槽,所述有机层填充所述凹槽。
可选的,在本申请的一些实施例中,所述石墨烯基碳材料包括石墨烯和碳纳米管中的至少一种。
可选的,在本申请的一些实施例中,所述吸气层还包括树脂和光引发剂。
可选的,在本申请的一些实施例中,所述吸气纳米粒子为多孔结构。
可选的,在本申请的一些实施例中,所述第一无机层包括第一边界,所述吸气层包括第二边界,所述有机层包括第三边界,所述第二无机层包括第四边界,所述第三边界设置在所述第二边界的内侧,所述第二边界设置在所述第一边界的内侧;
所述第二无机层分别与所述第二边界和所述第三边界相连;所述第四边界位于所述第一边界的外侧或与所述第一边界重合。
可选的,在本申请的一些实施例中,所述第一边界到所述第二边界的距离大于所述第二边界到所述第三边界的距离。
相应的,本申请还涉及一种显示面板的制备方法,其包括以下步骤:
在基板上形成发光器件层;
在所述发光器件层上形成至少一封装层;
所述在所述发光器件层上形成至少一封装层,包括以下步骤:
在所述发光器件层上形成第一无机层;
在所述第一无机层上形成吸气层;
在所述吸气层上形成有机层;
在所述有机层上形成第二无机层,所述第二无机层覆盖所述有机层和所述吸气层并与所述第一无机层相连。
可选的,在本申请的一些实施例中,在所述第一无机层上形成吸气层,包括以下步骤:
通过化学基团键合石墨烯基碳材料和吸气纳米粒子,形成吸气石墨烯;
混合所述吸气石墨烯、树脂和光引发剂,形成混合材料;
在所述第一无机层上涂布所述混合材料,形成混合材料层;
固化所述混合材料层,形成所述吸气层。
可选的,在本申请的一些实施例中,所述石墨烯基碳材料包括石墨烯和碳纳米管中的至少一种。
本申请实施例中的显示面板中,发光器件层设置在基板,封装层覆盖发光器件层和基板;封装层包括第一无机层、吸气层、有机层和第二无机层,第一无机层覆盖发光器件层;吸气层设置在第一无机层上;有机层设置在吸气层上;第二无机层覆盖有机层和吸气层并与第一无机层相连。
本申请实施例中的显示面板及其制备方法,在封装层中形成吸气层以吸收有机层释放的气体,减低了封装层内的气体量,进而降低了气体撑破无机层的风险,以及防止第一无机层被异物损坏时,外界水氧侵入发光器件层。
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的显示面板的结构示意图;
图2是本申请实施例提供的显示面板的吸气石墨烯的结构示意图;
图3是本申请实施例提供的显示面板的制备方法的流程示意图;
图4是本申请实施例提供的显示面板的制备方法中步骤B1的结构示意图;
图5是本申请实施例提供的显示面板的制备方法中步骤B2的结构示意图。
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。此外,应当理解的是,此处所描述的具体实施方式仅用于说明和解释本申请,并不用于限制本申请。在本申请中,在未作相反说明的情况下,使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下,具体为附图中的图面方向;而“内”和“外”则是针对装置的轮廓而言的。
本申请实施例提供一种显示面板及其制备方法,下文进行详细说明。需说明的是,以下实施例的描述顺序不作为对实施例优选顺序的限定。
请参照图1,本申请实施例提供一种显示面板100,其包括基板11、发光器件层12和至少一封装层13。
发光器件层12设置在基板11。封装层13覆盖发光器件层12和基板11。
封装层13包括第一无机层131、吸气层132、有机层133和第二无机层134。第一无机层131覆盖发光器件层12。吸气层132设置在第一无机层131上。有机层133设置在吸气层132上。第二无机层134覆盖有机层133和吸气层132并与第一无机层131相连。
本申请实施例中的显示面板100,在封装层13中形成吸气层132以吸收有机层133释放的气体,减低了封装层13内的气体量,也降低了气体撑破无机层的风险,以及防止第一无机层被异物损坏时,外界水氧侵入发光器件层,进而减少黑点的形成。
可选的,基板11包括衬底和设置在衬底上的薄膜晶体管。衬底可为硬性基板或者柔性基板。衬底的材质包括玻璃、蓝宝石、硅、二氧化硅、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇脂、聚碳酸酯、聚醚砜、含有聚芳酯的芳族氟甲苯、多环烯烃、聚酰亚胺或聚氨酯中的一种。
可选的,发光器件层12包括依次设置在基板11上的第一电极、发光层和第二电极。发光器件层12可以是顶发光型,也可以是底发光型。
也就是说,第一电极和第二电极中的一者为反射电极,另一者则为透明电极。
可选的,发光层的材料可以是有机材料,比如可以是Alq3、双(2-甲基-8-羟基喹啉-N1,O8)-(1,1'-联苯-4-羟基)铝(BAlq)、DPVBi、Almq3、3-叔丁基-9,10-二(2-萘)蒽(TBADN)。
发光层的材料也可以是无机材料,比如可以是选自IV族半导体纳米晶、II-V族半导体纳米晶、II-VI族半导体纳米晶、IV-VI族半导体纳米晶、III-V族半导体纳米晶和III-VI族半导体纳米晶等中的一种或多种。作为举例,可以为硅量子点、锗量子点、硫化镉量子点、硒化镉量子点、碲化镉量子点、硒化锌量子点、硫化铅量子点、硒化铅量子点、磷化铟量子点、砷化铟量子点和氮化镓量子点等中的一种或多种。
可选的,封装层13的层数可以是1层,也可以是多层。
可选的,第一无机层131和第二无机层134的材料可以选自硅氧化物、硅氮化物、硅氮氧化物、氧化铝、氧化镁中的至少一种。第一无机层131的材料也可以是其他金属氧化物。
可选的,吸气层132的材料包括吸气石墨烯xs。吸气石墨烯xs由石墨烯基碳材料sm和吸气纳米粒子xq通过化学基团键合形成。
可选的,石墨烯基碳材料sm包括石墨烯和碳纳米管中的至少一种。
其中本实施例以石墨烯作为吸气层132的材料。由于石墨烯具有极佳的阻隔水氧的特性,以提高吸气层132的阻隔水氧的性能。另外,石墨烯键合吸气纳米粒子,提高了石墨烯的分散性。在微观结构中,形成层状石墨烯和吸气纳米粒子的间隔结构,可有效的吸收有机层133释放的气体。其次,石墨烯具有较好的延展性,可作为应力释放层,减小有机层固化收缩以及加热膨胀对无机层的损伤。
可选的,化学基团可以是环氧基团、醚类基团或酯基等含氧基团,也可以是含氢基团或含氟基团。
其中,石墨烯基碳材料sm的表面可以通过化学基团连接至少一个吸气纳米粒子xq。比如石墨烯基碳材料sm的表面可以通过化学基团连接至少一个吸气纳米粒子xq。
另外,如图2所示,一个吸气纳米粒子xq也可以通过化学基团连接至少一个石墨烯基碳材料sm粒子,比如一个吸气纳米粒子xq通过两个化学基团键合两个石墨烯粒子。
石墨烯基碳材料sm之间也可以通过化学基团键合在一起。比如石墨烯粒子通过化学基团键合碳纳米管粒子;至少两个石墨烯粒子通过化学基团键合在一起;或至少两个碳纳米管粒子通过化学基团键合在一起。
可选的,在一些实施例中,石墨烯基碳材料sm包括石墨烯和碳纳米管;石墨烯粒子和碳纳米管粒子键合,石墨烯粒子与吸气纳米粒子xq键合。
可选的,吸气纳米粒子xq为多孔结构,以提高吸气层132吸收气体的性能。在一些实施例中,吸气纳米粒子xq也可以不是多孔材料。
可选的,吸气纳米粒子xq可以是分子筛或纳米金属有机框架分子等粒子。
可选的,吸气层132还包括树脂sz和光引发剂。也即吸气石墨烯xs、树脂和光引发剂混合在一起以形成吸气层132。
可选的,树脂sz可以是环氧树脂或亚克力树脂等。
可选的,在一些实施例中,吸气层132面向有机层133的一侧形成有凹槽。有机层133填充凹槽。在吸气层132上形成凹槽,一方面提高了吸气层132的柔韧性,另一方面增加了有机层133和吸气层132的接触面积,进而提高了吸气层132吸收有机层释放的气体的效率,且提高了吸气层132和有机层133连接的稳定性。
可选的,吸气层132材料的粘度介于100cps至500cps之间,比如可以是100cps、200cps、300cps、400cps或500cps。吸气层132的厚度小于5微米,比如可以是4微米、3微米、2微米或1微米。
可选的,第一无机层131包括第一边界13a。吸气层132包括第二边界13b。有机层133包括第三边界13c。第二无机层134包括第四边界13d。第三边界13c设置在第二边界13b的内侧。第二边界13b设置在第一边界13a的内侧。
第二无机层134分别与第二边界13b和第三边界13c相连。第四边界13d位于第一边界13a的外侧或与第一边界13a重合。这样的设置提高封装层13封装的稳定性,使得第二无机层134同时于第一无机层131、吸气层132和有机层133相连。
可选的,第一边界13a到第二边界13b的距离大于第二边界13b到第三边界13c的距离。这样的设置,进一步提高了封装层13的稳定性。
请参照图3,相应的,本申请还涉及一种显示面板100的制备方法,其包括以下步骤:
步骤B1:在基板上形成发光器件层;
步骤B2:在所述发光器件层上形成至少一封装层;
所述在所述发光器件层上形成至少一封装层,包括以下步骤:
步骤B21:在所述发光器件层上形成第一无机层;
步骤B22:在所述第一无机层上形成吸气层;
步骤B23:在所述吸气层上形成有机层;
步骤B24:在所述有机层上形成第二无机层,所述第二无机层覆盖所述有机层和所述吸气层并与所述第一无机层相连。
本申请实施例中的显示面板的其制备方法,在封装层中形成吸气层以吸收有机层释放的气体,减低了封装层内的气体量,进而降低了气体撑破无机层的风险。
下面对显示面板100的制备方法进行阐述。需要说明的是,该制备方法用于制备上述实施例的显示面板100。
请参照图4,在步骤B1中,在基板11上形成发光器件层12。
其中,基板11包括衬底和设置在衬底上的薄膜晶体管。衬底可为硬性基板或者柔性基板。衬底的材质包括玻璃、蓝宝石、硅、二氧化硅、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇脂、聚碳酸酯、聚醚砜、含有聚芳酯的芳族氟甲苯、多环烯烃、聚酰亚胺或聚氨酯中的一种。
可选的,发光器件层12包括依次设置在基板11上的第一电极、发光层和第二电极。发光器件层12可以是顶发光型,也可以是底发光型。
也就是说,第一电极和第二电极中的一者为反射电极,另一者则为透明电极。
可选的,发光层的材料可以是有机材料,比如可以是Alq3、双(2-甲基-8-羟基喹啉-N1,O8)-(1,1'-联苯-4-羟基)铝(BAlq)、DPVBi、Almq3、3-叔丁基-9,10-二(2-萘)蒽(TBADN)。
发光层的材料也可以是无机材料,比如可以是选自IV族半导体纳米晶、II-V族半导体纳米晶、II-VI族半导体纳米晶、IV-VI族半导体纳米晶、III-V族半导体纳米晶和III-VI族半导体纳米晶等中的一种或多种。作为举例,可以为硅量子点、锗量子点、硫化镉量子点、硒化镉量子点、碲化镉量子点、硒化锌量子点、硫化铅量子点、硒化铅量子点、磷化铟量子点、砷化铟量子点和氮化镓量子点等中的一种或多种。
随后转入步骤B2。
请参照图5,在步骤B2中,在发光器件层12上形成至少一封装层13。
步骤B2包括以下步骤:
步骤B21:在发光器件层12上形成第一无机层131。
其中,可选的,第一无机层131的材料可以选自硅氧化物、硅氮化物、硅氮氧化物、氧化铝、氧化镁中的至少一种。第一无机层131的材料也可以是其他金属氧化物。随后转入步骤B22。
步骤B22:在第一无机层131上形成吸气层132。
其中,步骤B22包括以下步骤:
步骤B221:通过化学基团键合石墨烯基碳材料sm和吸气纳米粒子xq,形成吸气石墨烯xs。
可选的,石墨烯基碳材料sm包括石墨烯和碳纳米管中的至少一种。
化学基团可以是环氧基团、醚类基团或酯基等含氧基团,也可以是含氢基团或含氟基团。
石墨烯基碳材料sm的表面可以通过化学基团连接至少一个吸气纳米粒子xq。比如石墨烯基碳材料sm的表面可以通过化学基团连接至少一个吸气纳米粒子xq。
另外,如图2所示,一个吸气纳米粒子xq也可以通过化学基团连接至少一个石墨烯基碳材料sm粒子,比如一个吸气纳米粒子xq通过两个化学基团键合两个石墨烯粒子。
石墨烯基碳材料sm之间也可以通过化学基团键合在一起。比如石墨烯粒子通过化学基团键合碳纳米管粒子;至少两个石墨烯粒子通过化学基团键合在一起;或至少两个碳纳米管粒子通过化学基团键合在一起。
可选的,在一些实施例中,石墨烯基碳材料sm包括石墨烯和碳纳米管;石墨烯粒子和碳纳米管粒子键合,石墨烯粒子与吸气纳米粒子xq键合。
可选的,吸气纳米粒子xq为多孔结构,以提高吸气层132吸收气体的性能。在一些实施例中,吸气纳米粒子xq也可以不是多孔材料。
可选的,吸气纳米粒子xq可以是分子筛或纳米金属有机框架分子等粒子。
步骤B222:混合吸气石墨烯xs、树脂sz和光引发剂,形成混合材料。其中混合材料的粘度介于100cps至500cps之间,比如可以是100cps、200cps、300cps、400cps或500cps。
步骤B223:在第一无机层131上涂布混合材料,形成混合材料层。可采用旋涂或喷墨打印的方式在第一无机层131上形成混合材料层。
步骤B24:固化所述混合材料层,形成所述吸气层132。可采用紫外光固化混合材料层,并烘烤所述混合材料层形成吸气层132。
步骤B23:在吸气层132上形成有机层133。
步骤B24:在有机层133上形成第二无机层134。第二无机层134覆盖有机层133和吸气层132并与第一无机层131相连。
可选的,第二无机层134的材料可以选自硅氧化物、硅氮化物、硅氮氧化物、氧化铝、氧化镁中的至少一种。第二无机层134的材料也可以是其他金属氧化物。
这样便完成了本申请实施例的显示面板100的制备过程。
本申请实施例中的显示面板及其制备方法中,发光器件层设置在基板,封装层覆盖发光器件层和基板;封装层包括第一无机层、吸气层、有机层和第二无机层,第一无机层覆盖发光器件层;吸气层设置在第一无机层上;有机层设置在吸气层上;第二无机层覆盖有机层和吸气层并与第一无机层相连。
本申请实施例中的显示面板及其制备方法,在封装层中形成吸气层以吸收有机层释放的气体,减低了封装层内的气体量,进而降低了气体撑破无机层的风险。
以上对本申请实施例所提供的一种显示面板及其制备方法进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的方法及其核心思想;同时,对于本领域的技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本申请的限制。
Claims (20)
- 一种显示面板,其包括:基板;发光器件层,所述发光器件层设置在所述基板;以及至少一封装层,所述封装层包括:第一无机层,所述第一无机层覆盖所述发光器件层;吸气层,所述吸气层设置在所述第一无机层上;有机层,所述有机层设置在所述吸气层上;以及第二无机层,所述第二无机层覆盖所述有机层和所述吸气层并与所述第一无机层相连;所述吸气层的材料包括吸气石墨烯,所述吸气石墨烯由石墨烯基碳材料和吸气纳米粒子通过化学基团键合形成;所述石墨烯基碳材料之间通过所述化学基团键合设置。
- 根据权利要求1所述的显示面板,其中,所述石墨烯基碳材料包括石墨烯和碳纳米管中的至少一种。
- 根据权利要求1所述的显示面板,其中,所述吸气层还包括树脂和光引发剂。
- 根据权利要求1所述的显示面板,其中,所述吸气纳米粒子为多孔结构。
- 根据权利要求1所述的显示面板,其中,所述第一无机层包括第一边界,所述吸气层包括第二边界,所述有机层包括第三边界,所述第二无机层包括第四边界,所述第三边界设置在所述第二边界的内侧,所述第二边界设置在所述第一边界的内侧;所述第二无机层分别与所述第二边界和所述第三边界相连;所述第四边界位于所述第一边界的外侧或与所述第一边界重合。
- 根据权利要求5所述的显示面板,其中,所述第一边界到所述第二边界的距离大于所述第二边界到所述第三边界的距离。
- 根据权利要求1所述的显示面板,其中,所述吸气层面向所述有机层的一侧形成有凹槽,所述有机层填充所述凹槽。
- 根据权利要求1所述的显示面板,其中,所述吸气纳米粒子为分子筛或纳米金属有机框架分子。
- 一种显示面板,其包括:基板;发光器件层,所述发光器件层设置在所述基板;以及至少一封装层,所述封装层包括:第一无机层,所述第一无机层覆盖所述发光器件层;吸气层,所述吸气层设置在所述第一无机层上;有机层,所述有机层设置在所述吸气层上;以及第二无机层,所述第二无机层覆盖所述有机层和所述吸气层并与所述第一无机层相连。
- 根据权利要求9所述的显示面板,其中,所述吸气层的材料包括吸气石墨烯,所述吸气石墨烯由石墨烯基碳材料和吸气纳米粒子通过化学基团键合形成。
- 根据权利要求10所述的显示面板,其中,所述石墨烯基碳材料之间通过所述化学基团键合设置。
- 根据权利要求10所述的显示面板,其中,所述吸气层面向所述有机层的一侧形成有凹槽,所述有机层填充所述凹槽。
- 根据权利要求10所述的显示面板,其中,所述石墨烯基碳材料包括石墨烯和碳纳米管中的至少一种。
- 根据权利要求10所述的显示面板,其中,所述吸气层还包括树脂和光引发剂。
- 根据权利要求10所述的显示面板,其中,所述吸气纳米粒子为多孔结构。
- 根据权利要求9所述的显示面板,其中,所述第一无机层包括第一边界,所述吸气层包括第二边界,所述有机层包括第三边界,所述第二无机层包括第四边界,所述第三边界设置在所述第二边界的内侧,所述第二边界设置在所述第一边界的内侧;所述第二无机层分别与所述第二边界和所述第三边界相连;所述第四边界位于所述第一边界的外侧或与所述第一边界重合。
- 根据权利要求16所述的显示面板,其中,所述第一边界到所述第二边界的距离大于所述第二边界到所述第三边界的距离。
- 一种显示面板的制备方法,其包括以下步骤:在基板上形成发光器件层;在所述发光器件层上形成至少一封装层;所述在所述发光器件层上形成至少一封装层,包括以下步骤:在所述发光器件层上形成第一无机层;在所述第一无机层上形成吸气层;在所述吸气层上形成有机层;在所述有机层上形成第二无机层,所述第二无机层覆盖所述有机层和所述吸气层并与所述第一无机层相连。
- 根据权利要求18所述的显示面板的制备方法,其中,在所述第一无机层上形成吸气层,包括以下步骤:通过化学基团键合石墨烯基碳材料和吸气纳米粒子,形成吸气石墨烯;混合所述吸气石墨烯、树脂和光引发剂,形成混合材料;在所述第一无机层上涂布所述混合材料,形成混合材料层;固化所述混合材料层,形成所述吸气层。
- 根据权利要求19所述的显示面板的制备方法,其中,所述石墨烯基碳材料包括石墨烯和碳纳米管中的至少一种。
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CN111129349A (zh) * | 2019-12-26 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
CN214226948U (zh) * | 2021-01-22 | 2021-09-17 | 福建华佳彩有限公司 | 一种封装结构 |
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