WO2023106316A1 - 受光装置 - Google Patents
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- WO2023106316A1 WO2023106316A1 PCT/JP2022/045035 JP2022045035W WO2023106316A1 WO 2023106316 A1 WO2023106316 A1 WO 2023106316A1 JP 2022045035 W JP2022045035 W JP 2022045035W WO 2023106316 A1 WO2023106316 A1 WO 2023106316A1
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- H—ELECTRICITY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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Definitions
- the present disclosure relates to a light receiving device.
- An imaging device with a three-dimensional structure has been proposed that is configured by bonding together a substrate having sensor pixels, a substrate having a readout circuit, and a substrate having a logic circuit (Patent Document 1).
- a light receiving device includes a first substrate having a plurality of photoelectric conversion units that photoelectrically convert light and an accumulation unit that accumulates charges photoelectrically converted by the photoelectric conversion units; a second substrate that has a readout circuit that outputs a first signal based on the accumulated charge and is laminated on the first substrate; and a wiring layer that includes vias that electrically connect the storage section and the readout circuit.
- the first substrate and the second substrate are laminated such that the first surface on which the elements of the first substrate are formed and the second surface on which the elements of the second substrate are formed face each other.
- the via penetrates multiple layers in the wiring layer.
- FIG. 1 is a block diagram showing an example of the overall configuration of an imaging device according to an embodiment of the present disclosure
- FIG. 3 is a diagram showing a configuration example of a pixel sharing unit of the imaging device according to the embodiment of the present disclosure
- FIG. 1 is a schematic diagram showing an example of a cross-sectional configuration of an imaging device according to an embodiment of the present disclosure
- FIG. It is a figure showing an example of section composition of an imaging device concerning an embodiment of this indication.
- It is a figure showing an example of a manufacturing method of an imaging device concerning an embodiment of this indication.
- It is a figure showing an example of a manufacturing method of an imaging device concerning an embodiment of this indication.
- It is a figure showing an example of a manufacturing method of an imaging device concerning an embodiment of this indication.
- It is a figure showing an example of a manufacturing method of an imaging device concerning an embodiment of this indication.
- FIG. 1 It is a figure showing an example of a manufacturing method of an imaging device concerning an embodiment of this indication. It is a figure showing an example of a manufacturing method of an imaging device concerning an embodiment of this indication. It is a figure showing an example of a manufacturing method of an imaging device concerning an embodiment of this indication. It is a figure showing an example of a manufacturing method of an imaging device concerning an embodiment of this indication. It is a figure showing an example of section composition of an imaging device concerning modification 1 of this indication. It is a figure showing an example of section composition of an imaging device concerning modification 2 of this indication.
- FIG. 11 is a diagram illustrating another example of a cross-sectional configuration of an imaging device according to modification 2 of the present disclosure; It is a figure which shows an example of the cross-sectional structure of the imaging device which concerns on the modification 3 of this indication.
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram illustrating another example of a cross-sectional configuration of an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram illustrating another example of a cross-sectional configuration of an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram illustrating another example of a cross-sectional configuration of an imaging device according to Modification 3 of the present disclosure
- It is a figure which shows an example of the cross-sectional structure of the imaging device which concerns on the modification 4 of this indication.
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the present disclosure
- FIG. 11 is a diagram for explaining an example of a method for manufacturing an imaging device according to Modification 3 of the
- FIG. 11 is a diagram illustrating another example of a cross-sectional configuration of an imaging device according to Modification 4 of the present disclosure
- 1 is a block diagram showing a configuration example of an electronic device having an imaging device
- FIG. 1 is a block diagram showing an example of a schematic configuration of a vehicle control system
- FIG. 4 is an explanatory diagram showing an example of installation positions of an outside information detection unit and an imaging unit
- 1 is a diagram showing an example of a schematic configuration of an endoscopic surgery system
- FIG. 3 is a block diagram showing an example of functional configurations of a camera head and a CCU;
- FIG. 1 is a block diagram showing an example of the overall configuration of an imaging device, which is an example of a light receiving device according to an embodiment of the present disclosure.
- the imaging device 1 which is a light receiving device, is a device that receives incident light and photoelectrically converts it.
- An imaging device (light receiving device) 1 photoelectrically converts received light to generate a signal.
- the imaging device 1 captures incident light (image light) from a subject via an optical lens system (not shown).
- the imaging device 1 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor, and captures an image of a subject.
- CMOS Complementary Metal Oxide Semiconductor
- the imaging device 1 has a pixel array section 240 in which pixels P each having a photoelectric conversion section (photoelectric conversion element) are arranged in a matrix.
- pixels P each having a photoelectric conversion section are arranged in a matrix.
- the pixel array section 240 is an area in which the pixels P are repeatedly arranged in an array.
- the imaging device 1 has, for example, an input section 210 , a row driving section 220 , a timing control section 230 , a column signal processing section 250 , an image signal processing section 260 and an output section 270 in a peripheral area of the pixel array section 240 .
- pixel sharing units 40 each including a plurality of pixels P are arranged in an array.
- the pixel sharing unit 40 includes four pixels (pixel Pa, pixel Pb, pixel Pc, and pixel Pd).
- the pixels Pa to Pd are arranged, for example, in 2 rows ⁇ 2 columns.
- Pixels Pa to Pd each have, for example, a photodiode PD as a photoelectric conversion unit.
- a readout circuit (see FIG. 2), which will be described later, is provided for each pixel sharing unit 40.
- the readout circuit includes an amplification transistor, a reset transistor, and the like, and outputs a pixel signal based on charges photoelectrically converted by the photoelectric conversion unit.
- the pixel sharing unit 40 is a unit that shares one readout circuit, and a plurality of pixels (pixels Pa to Pd in FIG. 1) of the pixel sharing unit 40 share one readout circuit.
- one readout circuit is provided for every four pixels (pixels Pa to Pd). By operating the readout circuit in a time-division manner, the pixel signals of the pixels Pa to Pd are read out.
- the imaging device 1 is provided with a plurality of row drive signal lines Lread (row selection lines, reset control lines, etc.) and a plurality of vertical signal lines (column readout lines) Lsig.
- a row drive signal line Lread is wired for each pixel row composed of a plurality of pixels P arranged in the horizontal direction (row direction).
- a vertical signal line Lsig is wired for each pixel column composed of a plurality of pixels P arranged in the vertical direction (column direction).
- the row drive signal line Lread transmits, for example, a signal that drives each transistor of the pixel sharing unit 40 . Pixel signals can be read from each of the pixels Pa to Pd included in the pixel sharing unit 40 to the vertical signal line Lsig.
- the row driving unit 220 is composed of a plurality of circuits including shift registers, address decoders, and the like.
- the row driving section 220 (driving circuit) generates a signal for driving the pixel P and outputs it to each pixel sharing unit 40 of the pixel array section 240 via the row driving signal line Lread.
- the row driving section 220 generates, for example, a signal TRG for controlling the transfer transistor, a signal SEL for controlling the select transistor, a signal RST for controlling the reset transistor, etc., and outputs them to each pixel sharing unit 40 through the row driving signal line Lread. do.
- the row drive signal line Lread transmits drive signals (signal TRG, signal SEL, etc.) for reading signals from the pixels P, as described above.
- the row driving section 220 is a row address control section, selectively scans each pixel P of the pixel array section 240, and drives, for example, a plurality of pixels P arranged in the pixel array section 240 in units of rows. A pixel signal of each pixel P selectively scanned by the row driving section 220 is output to the column signal processing section 250 via the vertical signal line Lsig connected to the pixel P.
- the column signal processing unit 250 (signal processing circuit) has, for example, a load circuit unit connected to the vertical signal line Lsig.
- the load circuit section forms a source follower circuit together with the amplifying transistor of the readout circuit.
- the column signal processing section 250 may have an amplifier circuit section that amplifies the pixel signal read out from the pixel sharing unit 40 via the vertical signal line Lsig.
- the column signal processing section 250 may have a noise processing section that removes noise components from pixel signals.
- the column signal processing unit 250 has an analog-to-digital converter (ADC).
- ADC has, for example, a comparator section and a counter section.
- the comparator section compares an analog signal to be converted with a reference signal to be compared.
- the counter section measures the time until the comparison result in the comparator section is inverted.
- the ADC of the column signal processing section 250 converts the pixel signal, which is an analog signal output from the pixel sharing unit 40, into a digital signal.
- the ADC may AD-convert pixel signals before noise processing by the noise processing unit, or may AD-convert pixel signals after noise processing by the noise processing unit.
- the column signal processing section 250 may include a horizontal scanning circuit section that controls scanning of the readout columns.
- the timing control unit 230 supplies timing control signals to the row driving unit 220 and the column signal processing unit 250 based on, for example, a reference clock signal and a timing control signal input to the imaging device 1 from the outside.
- Timing control signals are, for example, vertical synchronization signals and horizontal synchronization signals.
- the timing control unit 230 (control circuit) has, for example, a timing generator that generates various timing signals, and controls driving of the row driving unit 220 and the column signal processing unit 250 based on the generated various timing signals. .
- the image signal processing unit 260 is a circuit that performs various signal processing on pixel signals.
- the image signal processor 260 may include a processor and memory.
- the image signal processing unit 260 (signal processing circuit) performs, for example, signal processing such as black level adjustment and tone curve correction processing for adjusting gradation on AD-converted pixel signals. Note that tone curve characteristic data indicating the amount of tone correction may be stored in advance in the internal memory of the image signal processing unit 260 .
- the input unit 210 and the output unit 270 exchange signals with the outside.
- the above-described reference clock signal, timing control signal, characteristic data, and the like are input to the input unit 210 (input circuit) from outside the imaging device 1 .
- the output unit 270 (output circuit) can output, for example, pixel signals after signal processing by the image signal processing unit 260 or pixel signals before signal processing by the image signal processing unit 260 to the outside.
- FIG. 2 is a diagram showing a configuration example of a pixel sharing unit of the imaging device according to the embodiment of the present disclosure. An example in which four pixels P share one readout circuit 45 as shown in FIG. 1 will be described below.
- Each of the four pixels Pa to Pd has a photodiode PD as a photoelectric conversion unit (photoelectric conversion element), a transfer transistor Tr1, and a floating diffusion FD.
- the photodiode PD which is a photoelectric conversion unit, converts incident light into electric charges.
- the photodiode PD performs photoelectric conversion to generate charges according to the amount of light received.
- Transfer transistor Tr1 is electrically connected to photodiode PD.
- the transfer transistor Tr1 is controlled by a signal TRG, and transfers charges photoelectrically converted and accumulated by the photodiode PD to the floating diffusion FD.
- the floating diffusion FD is an accumulator and accumulates the transferred charges.
- the floating diffusion FD can also be said to be a holding portion that holds charges transferred from the photodiode PD.
- the floating diffusion FD accumulates the transferred charge and converts it into a voltage corresponding to the capacitance of the floating diffusion FD.
- the charge converted by the photodiode PD is transferred to the floating diffusion FD by the transfer transistor Tr1 and converted into a voltage corresponding to the capacitance of the floating diffusion FD.
- the transfer transistors Tr1 of the pixels Pa to Pd are on/off controlled by signals different from each other.
- the transfer transistor Tr1 of the pixel Pa is controlled by the signal TRG1
- the transfer transistor Tr1 of the pixel Pb is controlled by the signal TRG2.
- the transfer transistor Tr1 of the pixel Pc is controlled by the signal TRG3
- the transfer transistor Tr1 of the pixel Pd is controlled by the signal TRG4.
- the readout circuit 45 has, for example, an amplification transistor Tr2, a selection transistor Tr3, and a reset transistor Tr4.
- the gate of the amplification transistor Tr2 is connected to the floating diffusion FD, and receives the voltage converted by the floating diffusion FD.
- the amplification transistor Tr2 generates a pixel signal based on the voltage of the floating diffusion FD.
- a pixel signal is an analog signal based on photoelectrically converted charges.
- the selection transistor Tr3 is controlled by the signal SEL and outputs the pixel signal from the amplification transistor Tr2 to the vertical signal line Lsig. It can be said that the selection transistor Tr3 controls the output timing of the pixel signal.
- the reset transistor Tr4 can be controlled by the signal RST to reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. Pixel signals output from the readout circuit 45 are input to the above-described column signal processing section 250 (see FIG. 1) via vertical signal lines Lsig. Note that the selection transistor Tr3 may be provided between the power supply line to which the power supply voltage VDD is applied and the amplification transistor Tr2. Moreover, the selection transistor Tr3 may be omitted as necessary.
- the readout circuit 45 may have a transistor (gain switching transistor) for changing the gain of charge-voltage conversion in the floating diffusion FD.
- a gain switching transistor is provided, for example, between the reset transistor Tr4 and the floating diffusion FD. By turning on the gain switching transistor, the capacitance added to the floating diffusion FD is increased, and it becomes possible to change the gain when converting electric charge into voltage.
- FIG. 3 is a schematic diagram showing an example of the cross-sectional configuration of the imaging device according to the embodiment of the present disclosure.
- the imaging device 1 has a configuration in which a first substrate 101, a second substrate 102, and a third substrate 103 are stacked in the Z-axis direction.
- Each of the first substrate 101, the second substrate 102, and the third substrate 103 is composed of a semiconductor substrate (for example, a silicon substrate).
- the incident direction of light from the subject is the Z-axis direction
- the left-right direction of the paper perpendicular to the Z-axis direction is the X-axis direction
- the Z-axis direction and the direction perpendicular to the X-axis direction are the Y-axis directions. and In the following figures, directions may be indicated with reference to the direction of the arrow in FIG.
- the first substrate 101, the second substrate 102, and the third substrate 103 each have first surfaces 11S1, 12S1, 13S1 on which transistors are provided, and second surfaces 11S2, 12S2, 13S2. .
- the first surfaces 11S1, 12S1, and 13S1 are element formation surfaces on which elements such as transistors are formed.
- a gate electrode, a gate oxide film, and the like are provided on each of the first surfaces 11S1, 12S1, and 13S1.
- a wiring layer 111 is provided on the first surface 11S1 of the first substrate 101, as shown in FIG.
- a wiring layer 121 is provided on the first surface 12S1 of the second substrate 102, and a wiring layer 122 is provided on the second surface 12S2 of the second substrate 102.
- a wiring layer 131 is provided on the first surface 13S1 of the third substrate 103.
- the wiring layers 111, 121, 122, and 131 include, for example, conductor films and insulating films, and have a plurality of wirings, vias, and the like.
- Each of the wiring layers 111, 121, 122, 131 includes, for example, two or more layers of wiring.
- Each of the wiring layers 111, 121, 122, and 131 may include three layers, or four or more layers of wiring.
- the wiring layers 111, 121, 122, and 131 have, for example, a structure in which a plurality of wirings are stacked with interlayer insulating layers (interlayer insulating films) interposed therebetween.
- the wiring layer is formed using, for example, aluminum (Al), copper (Cu), tungsten (W), polysilicon (Poly-Si), or the like.
- the interlayer insulating layer is, for example, a single layer film made of one of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like, or a laminated film made of two or more of these. It is formed.
- first substrate 101 and the wiring layer 111 can be collectively referred to as the first substrate 101 (or the first circuit layer).
- the second substrate 102 and the wiring layers 121 and 122 can be collectively referred to as the second substrate 102 (or the second circuit layer).
- the third substrate 103 and the wiring layer 131 can be collectively referred to as the third substrate 103 (or the third circuit layer).
- the first substrate 101 and the second substrate 102 are laminated so that the first surface 11S1 and the first surface 12S1 on which elements such as transistors are respectively formed face each other by bonding the electrodes. That is, the first substrate 101 and the second substrate 102 are bonded so that their surfaces face each other.
- This joining method is called face-to-face joining.
- the second substrate 102 and the third substrate 103 are laminated such that the second surface 12S2 and the first surface 13S1 on which elements such as transistors are formed face each other by bonding the electrodes. That is, the second substrate 102 and the third substrate 103 are bonded such that the back surface of the second substrate 102 and the front surface of the third substrate 103 face each other.
- This joining method is called Face to Back joining.
- the first surface 11S1 of the first substrate 101 and the first surface 12S1 of the second substrate 102 are bonded together by bonding between metal electrodes made of copper (Cu), that is, Cu--Cu bonding.
- the second surface 12S2 of the second substrate 102 and the first surface 13S1 of the third substrate 103 are also bonded together by, for example, Cu--Cu bonding.
- the electrodes used for bonding may be made of a metal material other than copper (Cu), such as nickel (Ni), cobalt (Co), tin (Sn), or may be made of other materials. .
- the plurality of electrodes 15 formed by the fourth layer wiring M4 in the wiring layer 111 and the plurality of electrodes 25 formed by the fourth layer wiring M4 in the wiring layer 121 are joined.
- the first substrate 101 and the second substrate 102 are connected.
- the plurality of electrodes 26 configured by the uppermost layer wiring in the wiring layer 122 and the plurality of electrodes 35 configured by the uppermost layer wiring in the wiring layer 131 the second substrate 102 and the second substrate 102 are bonded together.
- 3 substrate 103 is connected.
- the electrodes 15, 25, 26, 35 are bonding electrodes.
- the photodiode PD, the transfer transistor Tr1, and the floating diffusion FD are arranged on the first substrate 101, and the readout circuit 45 is arranged on the second substrate 102. Since the photodiode PD and the readout circuit 45 are arranged on separate substrates, the photodiode PD can be made sufficiently large compared to the case where the photodiode PD and the readout circuit 45 are arranged on the same substrate. . This makes it possible to acquire an image with a wide dynamic range.
- the row driving unit 220, the timing control unit 230, the column signal processing unit 250, the image signal processing unit 260, and the like are arranged on the third substrate 103, for example. Also, the input unit 210 and the output unit 270 may be arranged on the third substrate 103 .
- the floating diffusion FD of the pixel P on the first substrate 101 is connected to the amplification transistor of the readout circuit 45 of the second substrate 102 via the wiring of the wiring layer 111 and the wiring of the wiring layer 121, as schematically shown in FIG. It is electrically connected to Tr2 and the like.
- the charge photoelectrically converted by the photodiode PD of the first substrate 101 is output to the floating diffusion FD and the readout circuit 45 of the second substrate 102 via the transfer transistor Tr1.
- the imaging device 1 is provided with through vias 17 penetrating through a plurality of layers.
- the through via 17 is a via that penetrates through a part or all of the wiring layers.
- the through via 17 penetrates, for example, a part of the wiring in the wiring layer and the interlayer insulating film, and connects the wiring in the upper layer and the wiring in the lower layer.
- the through via 17 is a connecting portion, and can connect, for example, wiring separated by two or more layers.
- a through via 17 is provided for each pixel P or for each of a plurality of pixels P. As shown in FIG.
- the through via 17 is made of, for example, tungsten (W), aluminum (Al), cobalt (Co), molybdenum (Mo), ruthenium (Ru), or the like. Note that the through via 17 may be made of another metal material.
- FIG. 3 exemplifies a first through via 17 a and a second through via 17 b as the through via 17 . In this specification, the first through via 17 a and the second through via 17 b may be collectively referred to as the through via 17 .
- the wiring layers 111 and 121 have a first through via 17a and a second through via 17b, respectively, as schematically shown in FIG.
- a plurality of first through vias 17 a are provided in the wiring layer 111
- a plurality of second through vias 17 b are provided in the wiring layer 121 .
- the first through via 17a and the second through via 17b are provided for each readout circuit 45, for example.
- the first through via 17 a is a via that penetrates through multiple layers in the wiring layer 111 .
- the first through via 17a penetrates the second and third wiring layers among the first to fourth wiring layers of the wiring layer 111.
- the first through via 17a connected to the wiring M1 of the first layer of the wiring layer 111 extends in the Z-axis direction and is formed to reach the wiring M4 of the fourth layer. That is, in the wiring layer 111, the first through via 17a connects the wiring M1 of the first layer and the wiring M4 of the fourth layer without passing the wiring M2 of the second layer and the wiring M3 of the third layer. to connect.
- the second through via 17b is a via that penetrates through multiple layers in the wiring layer 121 .
- the second through via 17b penetrates the second and third wiring layers among the first to fourth wiring layers of the wiring layer 121. provided to do so.
- the second through via 17b connects the first-layer wiring M1 and the fourth-layer wiring M4 in the wiring layer 121 without passing the second-layer wiring M2 and the third-layer wiring M3. Connecting.
- the first through via 17a and the second through via 17b may each be provided so as to penetrate three or more wiring layers.
- the floating diffusion FD provided in the first substrate 101 is connected to the second substrate 102 via the first through via 17a, the bonding electrodes 15 and 25, and the second through via 17b. It is electrically connected to the read circuit 45 .
- the first through via 17a is connected to the electrode 15 without passing through a plurality of layers in the wiring layer 111 (second and third wiring layers in FIG. 3). For this reason, as indicated by dotted arrows in FIG. It is possible to widen (longen) the distance from the eye wiring M3. Therefore, the wiring capacitance added to the floating diffusion FD electrically connected to the first through via 17a can be reduced.
- the second through via 17b is connected to the electrode 25 without passing through a plurality of layers in the wiring layer 121 (second and third wiring layers in FIG. 3). For this reason, as indicated by dotted arrows in FIG. It is possible to widen the distance from M3. Therefore, the wiring capacitance added to the floating diffusion FD electrically connected to the second through via 17b can be reduced.
- a space is secured between the wiring connecting the floating diffusion FD and the readout circuit 45 and the surrounding metal wiring.
- the capacitance added to the floating diffusion FD can be reduced. Therefore, it is possible to improve the conversion efficiency (conversion gain) when converting charges into voltage in the floating diffusion FD.
- Variations in the wiring capacitance added to the floating diffusion FD can be suppressed compared to the case where the floating diffusion FD and the readout circuit 45 are connected to each other via a large number of wirings (e.g., eight layers of wiring). As a result, variations in conversion efficiency can be reduced, and deterioration in the quality of pixel signals can be suppressed.
- the imaging device 1 may have a through via 17 that is electrically connected to other circuit elements of the first substrate 101, such as the gate of the transfer transistor Tr1, and that transmits the signal TRG.
- the imaging device 1 may also have through vias 17 electrically connected to other circuit elements of the second substrate 102, such as the gate of the select transistor Tr3 or the gate of the reset transistor Tr4.
- FIG. 4 is a diagram showing an example of a cross-sectional configuration of an imaging device according to an embodiment of the present disclosure.
- the imaging device 1 has a lens section 31 that collects light and a color filter 32 .
- the color filter 32 and the lens portion 31 are sequentially laminated on the first substrate 101 .
- the color filter 32 and the lens unit 31 are provided for each pixel P, for example.
- the lens part 31 guides the light incident from above to the photodiode PD side in FIG.
- the lens portion 31 is an optical member also called an on-chip lens.
- the color filter 32 selectively transmits light in a specific wavelength range among incident light. Light transmitted through the lens portion 31 and the color filter 32 is incident on the photodiode PD.
- the photodiode PD photoelectrically converts incident light to generate charges.
- pads 80 are provided on the second surface 11S2 side of the first substrate 101.
- An opening is formed on the pad 80 in the first substrate 101 to expose the pad 80 to the outside.
- the pad 80 is an electrode made of aluminum (Al), for example. Note that the pad 80 may be configured using another metal material.
- a plurality of pads 80 are arranged in the imaging device 1 .
- the pad 80 can supply the power supply voltage VDD (or the ground voltage VSS) input from the outside, for example, to each circuit of the first substrate 101 to the third substrate 103 .
- the through electrode 28 is an electrode penetrating through the second substrate 102 .
- the through electrode 28 extends in the Z-axis direction and is formed to reach the wiring layer 122 of the second substrate 102 .
- the through electrode 28 can connect a circuit provided on the first surface 12S1 side of the second substrate 102 and a circuit provided on the second surface 12S2 side of the second substrate 102 .
- the through electrodes 28 connect circuits provided in different layers.
- the through electrodes 28 are made of, for example, tungsten (W), aluminum (Al), cobalt (Co), molybdenum (Mo), ruthenium (Ru), or the like. Note that the through electrode 28 may be formed of another metal material.
- a plurality of through electrodes 28 are arranged in the peripheral region of the pixel array section 240 .
- the readout circuit 45 provided on the second substrate 102 is electrically connected to the wiring layer 131 and circuits of the third substrate 103 via the wiring layer 121 , the through electrode 28 and the wiring layer 122 .
- the readout circuit 45 is electrically connected to a circuit that controls the readout circuit 45, a circuit that processes pixel signals output from the readout circuit 45, and the like, by a plurality of through electrodes 28.
- the readout circuit 45 is connected to the row driving section 220 and the column signal processing section 250 described above via through electrodes 28 different from each other.
- the plurality of through electrodes 28 provided in the imaging device 1 include, for example, signals for controlling each transistor of the readout circuit 45 (the above-described signal SEL, signal RST, etc.), through electrodes for transmitting pixel signals, and the like. Further, a through electrode 28 connected to a power supply line to supply a power supply voltage VDD, a through electrode 28 connected to a ground line to supply a ground voltage VSS, and the like can be arranged.
- the floating diffusion FD and the amplification transistor Tr2 and the like of the readout circuit 45 are electrically connected to each other through the first through via 17a and the second through via 17b.
- Charges photoelectrically converted by the photodiode PD are transferred to the floating diffusion FD, the first through via 17a, and the second through via 17b by the transfer transistor Tr1.
- the amplification transistor Tr2 generates a pixel signal according to the voltage converted from charge to voltage in the floating diffusion FD. Pixel signals output by the amplification transistor Tr2 and the selection transistor Tr3 of the readout circuit 45 are transmitted to the column signal processing unit 250 of the third substrate 103, for example.
- a color filter 32 that transmits green (G) light is provided on the photodiode PD of the left pixel P of the left and right pixels P in the pixel sharing unit 40 .
- the photodiode PD of the pixel P on the left side receives light in the green wavelength range and performs photoelectric conversion.
- a color filter 32 that transmits red (R) light is provided on the photodiode PD of the right pixel P among the left and right pixels P in the pixel sharing unit 40 .
- the photodiode PD of the pixel P on the right side receives light in the red wavelength range and performs photoelectric conversion.
- each pixel P of the imaging device 1 can generate an R component pixel signal, a G component pixel signal, and a B component pixel signal.
- the imaging device 1 can obtain RGB pixel signals.
- the color filters 32 are not limited to primary color (RGB) color filters, and may be complementary color filters such as Cy (cyan), Mg (magenta), and Ye (yellow). Also, a color filter corresponding to W (white), that is, a filter that transmits light in the entire wavelength range of incident light may be arranged.
- RGB primary color
- W white
- FIG. 5A to 5G are diagrams showing an example of a method for manufacturing an imaging device according to an embodiment of the present disclosure.
- various elements such as a photodiode PD and a transfer transistor Tr1 are formed on the first substrate 101 .
- a transfer transistor Tr1, a floating diffusion FD, and the like are provided on the first surface 11S1 side of the first substrate 101 .
- the wiring layer 111 is formed on the first surface 11S1 of the first substrate 101.
- FIG. 5A various elements such as a photodiode PD and a transfer transistor Tr1 are formed on the first substrate 101 .
- a transfer transistor Tr1, a floating diffusion FD, and the like are provided on the first surface 11S1 side of the first substrate 101 .
- the wiring layer 111 is formed on the first surface 11S1 of the first substrate 101.
- an insulating film such as a silicon oxide film (SiO 2 ), for example, is formed as an interlayer insulating layer (interlayer insulating film) in the lower layer portion 51 and the upper layer portion 53 of the wiring layer 111 .
- an insulating film having a dielectric constant lower than that of a silicon oxide film is formed as an interlayer insulating layer in order to reduce wiring capacitance.
- the interlayer insulating layer of the central layer portion 52 may be made of SiOC, SiOCH, etc., which are low dielectric constant materials (Low-k materials).
- the interlayer insulating layer of the central layer portion 52 may be composed of a silicon oxide film.
- the central layer portion 52 is provided with a wiring made of a conductor, for example, a wiring made of copper (Cu) and tantalum (Ta) which is a barrier metal.
- a wiring made of a conductor for example, a wiring made of copper (Cu) and tantalum (Ta) which is a barrier metal.
- other wiring layers also include a layer having a silicon oxide film as an interlayer insulating layer (for example, an upper layer portion and a lower layer portion) and a layer having a low dielectric constant.
- a layer (for example, central layer portion) having the material as an interlayer insulating layer may be laminated.
- each transistor of the readout circuit 45 is formed on the second substrate 102 shown in FIG. 5B.
- An amplification transistor Tr2, a selection transistor Tr3, a reset transistor Tr4, and the like are provided on the first surface 12S1 side of the second substrate 102 .
- the wiring layer 121 is formed on the first surface 12S1 of the second substrate 102. As shown in FIG.
- the third substrate 103 shown in FIG. 5C various elements constituting the row driving section 220, the column signal processing section 250, the image signal processing section 260, etc. are formed.
- transistors of the row driving section 220, transistors of the column signal processing section 250, transistors of the image signal processing section 260, and the like are provided.
- the wiring layer 131 including the electrodes 35 serving as terminals for Cu--Cu connection is formed.
- the wiring layer 111 is formed with a plurality of first through vias 17a, electrodes 15 serving as terminals for Cu--Cu connection, and the like.
- the electrodes 15 are arranged on the surface of the wiring layer 111 .
- the wiring layer 121 is formed with a plurality of second through vias 17b, electrodes 25 serving as terminals for Cu--Cu connection, and the like.
- the electrodes 25 are arranged on the surface of the wiring layer 121 .
- the first substrate 101 and the second substrate 102 are formed by a plurality of electrodes 15 and a plurality of electrodes 25, so that the first surface 11S1 and the first surface 12S1 face each other. spliced. That is, the respective surfaces of the first substrate 101 and the second substrate 102 are bonded together. After that, the thickness of the second substrate 102 is reduced. As an example, the thickness of the second substrate 102 is 3 ⁇ m or less, eg, 0.5 ⁇ m.
- the insulating film and the second substrate 102 are partially etched (for example, reactive ion etching) to penetrate through.
- Form holes for the electrodes Holes for through electrodes may be formed in advance in the second substrate 102 and the wiring layer 121 before bonding the first substrate 101 and the second substrate 102 together.
- an insulating film for example, a silicon oxide film
- etching is performed so that the bottom surface of the hole for the through electrode reaches the wiring layer 121, and the wiring M1 of the first layer of the wiring layer 121 is exposed by the hole for the through electrode.
- a low-resistance conductive material containing Cu or Al is used to fill the hole for the through electrode to form the through electrode 28 .
- excess metal film on the through electrode 28 is removed.
- a wiring layer 122 including wirings connected to the through electrodes 28 and electrodes 26 serving as terminals for Cu—Cu connection is formed, thereby forming the wiring layer 122 shown in FIG. 5F. become a state
- the second substrate 102 and the third substrate 103 are separated from each other by a plurality of electrodes 26 and a plurality of electrodes 35 so that the second surface 12S2 and the first surface 13S1 face each other. Cu bonded.
- the thickness of the first substrate 101 is reduced.
- the thickness of the first substrate 101 is set to 4 ⁇ m.
- the color filter 32 and the lens portion 31 are sequentially formed on the second surface 11S2 side of the first substrate 101 .
- an opening is formed by dry etching and the pad 80 is provided.
- the imaging device 1 shown in FIG. 4 can be manufactured by the manufacturing method as described above. Moreover, the manufacturing method described above is merely an example, and other manufacturing methods may be employed.
- a light receiving device (imaging device 1) according to the present embodiment includes a plurality of photoelectric conversion units (photodiodes PD) that photoelectrically convert light, and an accumulation unit (floating diffusion FD) that accumulates charges photoelectrically converted by the photoelectric conversion units. ), a second substrate 102 having a readout circuit 45 for outputting a first signal (pixel signal) based on the charge accumulated in the accumulation portion, and laminated on the first substrate; and wiring layers (wiring layers 111 and 121) including vias (through vias 17) that electrically connect the readout circuit to the readout circuit.
- the first substrate and the second substrate are defined as the first surface (the first surface 11S1 of the first substrate 101) on which the elements of the first substrate are formed and the second surface (the second substrate 11S1) on which the elements of the second substrate are formed.
- the first surface 12S1) of 102 is laminated so as to face each other.
- a via (through via 17) penetrates a plurality of layers in the wiring layer.
- the floating diffusion FD and the readout circuit 45 are electrically connected to each other by the through vias 17 penetrating through multiple layers in the wiring layers 111 and 121 . Therefore, the capacitance added to the floating diffusion FD can be reduced. It is possible to improve the conversion efficiency (conversion gain) when converting charges into voltage in the floating diffusion FD.
- through vias 17 may be directly connected to a semiconductor substrate (eg, first substrate 101 or second substrate 102).
- a first through via 17a that is directly connected to a circuit element (for example, a floating diffusion FD, a transfer transistor Tr1, etc.) of the first substrate 101 may be provided.
- a second through via 17b may be provided that is directly connected to a circuit element of the second substrate 102 (for example, a transistor of the readout circuit 45).
- FIG. 6 is a diagram showing an example of a cross-sectional configuration of an imaging device according to Modification 1.
- a first through via 17a is arranged to connect the bonding electrode 15 and the floating diffusion FD.
- the first through via 17a is directly connected to the floating diffusion FD, which is the accumulation portion, without passing through the wiring of the first to fourth layers in the wiring layer 111.
- a second through via 17b connecting the junction electrode 25 and the amplification transistor Tr2 of the readout circuit 45 is arranged.
- the second through via 17b is directly connected to the amplification transistor Tr2 without passing through the first to fourth layer wirings in the wiring layer 121.
- the capacitance added to the floating diffusion FD can be reduced, and the conversion efficiency can be improved.
- FIG. 7 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to Modification 2. As illustrated in FIG. In the example shown in FIG. 7, a protective film 29 is provided in the wiring layer 111 so as to cover the periphery of the first through via 17a. Also, in the wiring layer 121, a protective film 29 is provided so as to cover the periphery of the second through via 17b.
- the protective film 29 contains silicon and at least one of oxygen, nitrogen and carbon.
- the protective film 29 may be composed of a silicon oxide film.
- a protective film 29 is provided between the insulating film of the wiring layer, for example, an insulating film made of a low dielectric constant material and the through vias 17, so that the metal material used for the through vias 17 is applied to the wiring layer. can be prevented from penetrating inside. As a result, it is possible to prevent an increase in the capacitance added to the circuit portion (for example, the floating diffusion FD) connected to the through via 17 and a short circuit between the through via 17 and other wiring or the like. . 8, the first through via 17a is directly connected to the circuit element of the first substrate 101, and the second through via 17b is connected to the circuit element of the second substrate 102. You may make it connect directly.
- a plurality of substrates may be connected by using the bonding between the through vias and the bonding electrodes.
- the first substrate 101 and the second substrate 102 are connected by bonding a plurality of through vias and a plurality of bonding electrodes.
- FIG. 9 is a diagram showing an example of a cross-sectional configuration of an imaging device according to Modification 3. As shown in FIG. FIG. 9 schematically shows a cross-sectional configuration example of part of the imaging device 1 . As shown in FIG. 9, the second through via 17b may be connected to the electrode 15, which is a bonding electrode. The first substrate 101 and the second substrate 102 are laminated by bonding the second through vias 17 b and the electrodes 15 . The first substrate 101 and the second substrate 102 of the imaging device 1 have bonding surfaces for the second through vias 17 b and the electrodes 15 .
- the second through via 17b is connected to the electrode 15 of the wiring layer 111 without passing through the wiring of the second to fourth layers of the wiring layer 121.
- the width (area) of the second through via 17b is larger than the width of the electrode 15, which is a bonding electrode. is also smaller.
- the floating diffusion FD provided on the first substrate 101 is connected to the readout circuit 45 of the second substrate 102 via the bonding electrode 15 on the first substrate 101 side and the second through via 17b. electrically connected.
- the capacitance added to the floating diffusion FD compared to the case where the floating diffusion FD and the readout circuit 45 are connected using two bonding electrodes on the first substrate 101 side and the second substrate 102 side. can be done. Therefore, conversion efficiency can be improved.
- FIG. 10A to 10F are diagrams for explaining an example of a method for manufacturing an imaging device according to Modification 3.
- FIG. 10A the wiring layer 111 is formed on the first surface 11S1 of the first substrate 101.
- FIG. 10B the wiring layer 111 is formed with the first through vias 17a.
- FIG. 10C an electrode 15 that is a bonding electrode is formed on the wiring layer 111 .
- a wiring layer 121 is formed on the first surface 12S1 of the second substrate 102, as shown in FIG. 10D. Further, as shown in FIG. 10E, the wiring layer 121 is formed with a second through via 17b. Then, as shown in FIG. 10F, the first substrate 101 and the second substrate 102 are arranged such that the first surface 11S1 and the first surface 12S1 face each other by the plurality of electrodes 15 and the plurality of second through vias 17b. spliced.
- the imaging device 1 having the structure shown in FIG. 9 can be manufactured by the manufacturing method described above. The manufacturing method described above is merely an example, and other manufacturing methods may be employed.
- FIG. 11 to 13 are diagrams showing another example of the cross-sectional configuration of the imaging device according to Modification 3.
- FIG. 11 As schematically shown in FIG. 11, the first through via 17a is directly connected to the circuit element of the first substrate 101, and the second through via 17b is directly connected to the circuit element of the second substrate 102. good too.
- the second through via 17b is connected to the electrode 15 of the wiring layer 111 without passing through the wirings of the first to fourth layers of the wiring layer 121.
- FIG. 11 is diagrams showing another example of the cross-sectional configuration of the imaging device according to Modification 3.
- the first through via 17a may be connected to the electrode 25, which is a bonding electrode.
- the first substrate 101 and the second substrate 102 are laminated by bonding the first through vias 17 a and the electrodes 25 .
- the first substrate 101 and the second substrate 102 of the imaging device 1 have bonding surfaces for the first through vias 17 a and the electrodes 25 .
- the first through via 17a is connected to the electrode 25 of the wiring layer 121 without passing through the wiring of the second to fourth layers of the wiring layer 111.
- the width (area) of the first through via 17a is larger than the width of the electrode 25, which is a bonding electrode. is also smaller.
- the first through via 17a may be directly connected to the circuit element of the first substrate 101, and the second through via 17b may be directly connected to the circuit element of the second substrate 102. good.
- the first through via 17a is connected to the electrode 25 of the wiring layer 121 without passing through the wirings of the first to fourth layers of the wiring layer 111.
- the example shown in FIG. 13 is connected to the electrode 25 of the wiring layer 121 without passing through the wirings of the first to fourth layers of the wiring layer 111.
- (2-4. Modification 4) 14 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to Modification 4.
- FIG. Bonding between through vias may be used to provide connections between multiple substrates.
- the first through via 17a may be directly connected to the second through via 17b.
- the plurality of first through vias 17a of the first substrate 101 and the plurality of second through vias 17b of the second substrate 102 are joined to connect the first substrate 101 and the second substrate 102 together.
- the first substrate 101 and the second substrate 102 are laminated by joining the first through vias 17a and the second through vias 17b.
- the first substrate 101 and the second substrate 102 of the imaging device 1 have bonding surfaces for the first through via 17a and the second through via 17b.
- the first through via 17a is connected to the second through via 17b of the wiring layer 121 without passing through the wiring of the second to fourth layers of the wiring layer 111.
- the second through via 17b is connected to the first through via 17a of the wiring layer 111 without passing through the wiring of the second to fourth layers of the wiring layer 121.
- the floating diffusion FD provided on the first substrate 101 is electrically connected to the readout circuit 45 of the second substrate 102 by the first through via 17a and the second through via 17b. Therefore, the capacitance added to the floating diffusion FD can be reduced.
- the imaging device 1 it is possible to secure a space between the wirings, compared to the case where the floating diffusion FD and the readout circuit 45 are connected using a plurality of wirings and a plurality of bonding electrodes. . Therefore, the capacitance added to the floating diffusion FD can be effectively reduced, and the conversion efficiency can be improved. In addition, it is possible to suppress the deterioration of the breakdown voltage between the wirings of the imaging device 1 and the deterioration of the characteristics of the imaging device 1 .
- FIG. 15 is a diagram showing another example of the cross-sectional configuration of the imaging device according to Modification 4.
- the first through via 17a is directly connected to the circuit element of the first substrate 101
- the second through via 17b is directly connected to the circuit element of the second substrate 102. good too.
- the first through via 17a and the second through via 17b are connected to each other without passing through the first to fourth wiring layers in the wiring layers 111 and 121. there is
- the back surface of the second substrate 102 and the front surface of the third substrate 103 may be bonded.
- the third substrate 103 having the row driving section 220, the column signal processing section 250, the image signal processing section 260, etc. may be three-dimensionally joined and connected to a substrate other than the second substrate 102. FIG.
- FIG. 9 shows a schematic configuration of the electronic device 1000. As shown in FIG.
- the electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007. and are interconnected via a bus line 1008 .
- a lens group 1001 an imaging device 1
- a DSP (Digital Signal Processor) circuit 1002 a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007. and are interconnected via a bus line 1008 .
- DSP Digital Signal Processor
- a lens group 1001 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 1 .
- the imaging apparatus 1 converts the amount of incident light, which is imaged on the imaging surface by the lens group 1001 , into an electric signal for each pixel and supplies the electric signal to the DSP circuit 1002 as a pixel signal.
- the DSP circuit 1002 is a signal processing circuit that processes signals supplied from the imaging device 1 .
- a DSP circuit 1002 outputs image data obtained by processing a signal from the imaging device 1 .
- a frame memory 1003 temporarily holds image data processed by the DSP circuit 1002 in frame units.
- the display unit 1004 is, for example, a panel type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel. to record.
- a panel type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel. to record.
- the operation unit 1006 outputs operation signals for various functions possessed by the electronic device 1000 in accordance with user's operations.
- the power supply unit 1007 appropriately supplies various power supplies to the DSP circuit 1002, the frame memory 1003, the display unit 1004, the recording unit 1005, and the operation unit 1006 as operating power supplies.
- the technology (the present technology) according to the present disclosure can be applied to various products.
- the technology according to the present disclosure can be realized as a device mounted on any type of moving body such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility, airplanes, drones, ships, and robots. may
- FIG. 10 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology according to the present disclosure can be applied.
- a vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001.
- the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an exterior information detection unit 12030, an interior information detection unit 12040, and an integrated control unit 12050.
- a microcomputer 12051, an audio/image output unit 12052, and an in-vehicle network I/F (interface) 12053 are illustrated.
- the drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs.
- the driving system control unit 12010 includes a driving force generator for generating driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism to adjust and a brake device to generate braking force of the vehicle.
- the body system control unit 12020 controls the operation of various devices equipped on the vehicle body according to various programs.
- the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, winkers or fog lamps.
- body system control unit 12020 can receive radio waves transmitted from a portable device that substitutes for a key or signals from various switches.
- the body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, etc. of the vehicle.
- the vehicle exterior information detection unit 12030 detects information outside the vehicle in which the vehicle control system 12000 is installed.
- the vehicle exterior information detection unit 12030 is connected with an imaging section 12031 .
- the vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image of the exterior of the vehicle, and receives the captured image.
- the vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as people, vehicles, obstacles, signs, or characters on the road surface based on the received image.
- the imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of received light.
- the imaging unit 12031 can output the electric signal as an image, and can also output it as distance measurement information.
- the light received by the imaging unit 12031 may be visible light or non-visible light such as infrared rays.
- the in-vehicle information detection unit 12040 detects in-vehicle information.
- the in-vehicle information detection unit 12040 is connected to, for example, a driver state detection section 12041 that detects the state of the driver.
- the driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 detects the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver is dozing off.
- the microcomputer 12051 calculates control target values for the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and controls the drive system control unit.
- a control command can be output to 12010 .
- the microcomputer 12051 realizes the functions of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, or vehicle lane deviation warning. Cooperative control can be performed for the purpose of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, or vehicle lane deviation warning. Cooperative control can be performed for the purpose of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, or vehicle
- the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, etc. based on the information about the vehicle surroundings acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, so that the driver's Cooperative control can be performed for the purpose of autonomous driving, etc., in which vehicles autonomously travel without depending on operation.
- the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the information detection unit 12030 outside the vehicle.
- the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the vehicle exterior information detection unit 12030, and performs cooperative control aimed at anti-glare such as switching from high beam to low beam. It can be carried out.
- the audio/image output unit 12052 transmits at least one of audio and/or image output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle.
- an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices.
- the display unit 12062 may include at least one of an on-board display and a head-up display, for example.
- FIG. 11 is a diagram showing an example of the installation position of the imaging unit 12031.
- the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.
- the imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose of the vehicle 12100, the side mirrors, the rear bumper, the back door, and the upper part of the windshield in the vehicle interior, for example.
- An image pickup unit 12101 provided in the front nose and an image pickup unit 12105 provided above the windshield in the passenger compartment mainly acquire images in front of the vehicle 12100 .
- Imaging units 12102 and 12103 provided in the side mirrors mainly acquire side images of the vehicle 12100 .
- An imaging unit 12104 provided in the rear bumper or back door mainly acquires an image behind the vehicle 12100 .
- Forward images acquired by the imaging units 12101 and 12105 are mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, and the like.
- FIG. 11 shows an example of the imaging range of the imaging units 12101 to 12104.
- the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided in the front nose
- the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided in the side mirrors, respectively
- the imaging range 12114 The imaging range of an imaging unit 12104 provided in the rear bumper or back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.
- At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
- at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.
- the microcomputer 12051 determines the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and changes in this distance over time (relative velocity with respect to the vehicle 12100). , it is possible to extract, as the preceding vehicle, the closest three-dimensional object on the course of the vehicle 12100, which runs at a predetermined speed (for example, 0 km/h or more) in substantially the same direction as the vehicle 12100. can. Furthermore, the microcomputer 12051 can set the inter-vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including following stop control) and automatic acceleration control (including following start control). In this way, cooperative control can be performed for the purpose of automatic driving in which the vehicle runs autonomously without relying on the operation of the driver.
- automatic brake control including following stop control
- automatic acceleration control including following start control
- the microcomputer 12051 converts three-dimensional object data related to three-dimensional objects to other three-dimensional objects such as motorcycles, ordinary vehicles, large vehicles, pedestrians, and utility poles. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into those that are visible to the driver of the vehicle 12100 and those that are difficult to see. Then, the microcomputer 12051 judges the collision risk indicating the degree of danger of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, an audio speaker 12061 and a display unit 12062 are displayed. By outputting an alarm to the driver via the drive system control unit 12010 and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be performed.
- At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
- the microcomputer 12051 can recognize a pedestrian by determining whether or not the pedestrian exists in the captured images of the imaging units 12101 to 12104 .
- recognition of a pedestrian is performed by, for example, a procedure for extracting feature points in images captured by the imaging units 12101 to 12104 as infrared cameras, and performing pattern matching processing on a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian.
- the audio image output unit 12052 outputs a rectangular outline for emphasis to the recognized pedestrian. is superimposed on the display unit 12062 . Also, the audio/image output unit 12052 may control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.
- the technology according to the present disclosure can be applied to, for example, the imaging unit 12031 among the configurations described above.
- the imaging device 1 can be applied to the imaging unit 12031 .
- the technology (the present technology) according to the present disclosure can be applied to various products.
- the technology according to the present disclosure may be applied to an endoscopic surgery system.
- FIG. 12 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (this technology) can be applied.
- FIG. 12 illustrates a situation in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000 .
- an endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as a pneumoperitoneum tube 11111 and an energy treatment instrument 11112, and a support arm device 11120 for supporting the endoscope 11100. , and a cart 11200 loaded with various devices for endoscopic surgery.
- An endoscope 11100 is composed of a lens barrel 11101 whose distal end is inserted into the body cavity of a patient 11132 and a camera head 11102 connected to the proximal end of the lens barrel 11101 .
- an endoscope 11100 configured as a so-called rigid scope having a rigid lens barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel. good.
- the tip of the lens barrel 11101 is provided with an opening into which the objective lens is fitted.
- a light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel 11101 by a light guide extending inside the lens barrel 11101, where it reaches the objective. Through the lens, the light is irradiated toward the observation object inside the body cavity of the patient 11132 .
- the endoscope 11100 may be a straight scope, a perspective scope, or a side scope.
- An optical system and an imaging element are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the imaging element by the optical system.
- the imaging device photoelectrically converts the observation light to generate an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image.
- the image signal is transmitted to a camera control unit (CCU: Camera Control Unit) 11201 as RAW data.
- CCU Camera Control Unit
- the CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and controls the operations of the endoscope 11100 and the display device 11202 in an integrated manner. Further, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing such as development processing (demosaicing) for displaying an image based on the image signal.
- CPU Central Processing Unit
- GPU Graphics Processing Unit
- the display device 11202 displays an image based on an image signal subjected to image processing by the CCU 11201 under the control of the CCU 11201 .
- the light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), for example, and supplies the endoscope 11100 with irradiation light for photographing a surgical site or the like.
- a light source such as an LED (Light Emitting Diode), for example, and supplies the endoscope 11100 with irradiation light for photographing a surgical site or the like.
- the input device 11204 is an input interface for the endoscopic surgery system 11000.
- the user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204 .
- the user inputs an instruction or the like to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100 .
- the treatment instrument control device 11205 controls driving of the energy treatment instrument 11112 for tissue cauterization, incision, blood vessel sealing, or the like.
- the pneumoperitoneum device 11206 inflates the body cavity of the patient 11132 for the purpose of securing the visual field of the endoscope 11100 and securing the operator's working space, and injects gas into the body cavity through the pneumoperitoneum tube 11111. send in.
- the recorder 11207 is a device capable of recording various types of information regarding surgery.
- the printer 11208 is a device capable of printing various types of information regarding surgery in various formats such as text, images, and graphs.
- the light source device 11203 that supplies the endoscope 11100 with irradiation light for photographing the surgical site can be composed of, for example, a white light source composed of an LED, a laser light source, or a combination thereof.
- a white light source is configured by a combination of RGB laser light sources
- the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. It can be carried out.
- the observation target is irradiated with laser light from each of the RGB laser light sources in a time division manner, and by controlling the drive of the imaging device of the camera head 11102 in synchronization with the irradiation timing, each of RGB can be handled. It is also possible to pick up images by time division. According to this method, a color image can be obtained without providing a color filter in the imaging device.
- the driving of the light source device 11203 may be controlled so as to change the intensity of the output light every predetermined time.
- the drive of the imaging device of the camera head 11102 in synchronism with the timing of the change in the intensity of the light to obtain an image in a time-division manner and synthesizing the images, a high dynamic A range of images can be generated.
- the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
- special light observation for example, by utilizing the wavelength dependence of light absorption in body tissues, by irradiating light with a narrower band than the irradiation light (i.e., white light) during normal observation, the mucosal surface layer So-called narrow band imaging is performed, in which a predetermined tissue such as a blood vessel is imaged with high contrast.
- fluorescence observation may be performed in which an image is obtained from fluorescence generated by irradiation with excitation light.
- the body tissue is irradiated with excitation light and the fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is A fluorescence image can be obtained by irradiating excitation light corresponding to the fluorescence wavelength of the reagent.
- the light source device 11203 can be configured to be able to supply narrowband light and/or excitation light corresponding to such special light observation.
- FIG. 13 is a block diagram showing an example of functional configurations of the camera head 11102 and CCU 11201 shown in FIG.
- the camera head 11102 has a lens unit 11401, an imaging section 11402, a drive section 11403, a communication section 11404, and a camera head control section 11405.
- the CCU 11201 has a communication section 11411 , an image processing section 11412 and a control section 11413 .
- the camera head 11102 and the CCU 11201 are communicably connected to each other via a transmission cable 11400 .
- a lens unit 11401 is an optical system provided at a connection with the lens barrel 11101 . Observation light captured from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401 .
- a lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
- the imaging unit 11402 is composed of an imaging device.
- the imaging device constituting the imaging unit 11402 may be one (so-called single-plate type) or plural (so-called multi-plate type).
- image signals corresponding to RGB may be generated by each image pickup element, and a color image may be obtained by synthesizing the image signals.
- the imaging unit 11402 may be configured to have a pair of imaging elements for respectively acquiring right-eye and left-eye image signals corresponding to 3D (Dimensional) display.
- the 3D display enables the operator 11131 to more accurately grasp the depth of the living tissue in the surgical site.
- a plurality of systems of lens units 11401 may be provided corresponding to each imaging element.
- the imaging unit 11402 does not necessarily have to be provided in the camera head 11102 .
- the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
- the drive unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under control from the camera head control unit 11405 . Thereby, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.
- the communication unit 11404 is composed of a communication device for transmitting and receiving various information to and from the CCU 11201.
- the communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400 .
- the communication unit 11404 receives a control signal for controlling driving of the camera head 11102 from the CCU 11201 and supplies it to the camera head control unit 11405 .
- the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and/or information to specify the magnification and focus of the captured image. Contains information about conditions.
- the imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately designated by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. good.
- the endoscope 11100 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.
- the camera head control unit 11405 controls driving of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
- the communication unit 11411 is composed of a communication device for transmitting and receiving various information to and from the camera head 11102 .
- the communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400 .
- the communication unit 11411 transmits a control signal for controlling driving of the camera head 11102 to the camera head 11102 .
- Image signals and control signals can be transmitted by electrical communication, optical communication, or the like.
- the image processing unit 11412 performs various types of image processing on the image signal, which is RAW data transmitted from the camera head 11102 .
- the control unit 11413 performs various controls related to imaging of the surgical site and the like by the endoscope 11100 and display of the captured image obtained by imaging the surgical site and the like. For example, the control unit 11413 generates control signals for controlling driving of the camera head 11102 .
- control unit 11413 causes the display device 11202 to display a captured image showing the surgical site and the like based on the image signal that has undergone image processing by the image processing unit 11412 .
- the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 detects the shape, color, and the like of the edges of objects included in the captured image, thereby detecting surgical instruments such as forceps, specific body parts, bleeding, mist during use of the energy treatment instrument 11112, and the like. can recognize.
- the control unit 11413 may use the recognition result to display various types of surgical assistance information superimposed on the image of the surgical site. By superimposing and presenting the surgery support information to the operator 11131, the burden on the operator 11131 can be reduced and the operator 11131 can proceed with the surgery reliably.
- a transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable of these.
- wired communication is performed using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.
- the technology according to the present disclosure can be preferably applied to, for example, the imaging unit 11402 provided in the camera head 11102 of the endoscope 11100 among the configurations described above.
- the technology according to the present disclosure can be applied to the imaging unit 11402, the sensitivity of the imaging unit 11402 can be increased, and the high-definition endoscope 11100 can be provided.
- the light receiving device of the present disclosure may be in the form of a module in which the imaging section and the signal processing section or the optical system are packaged together.
- an imaging apparatus that converts the amount of incident light that forms an image on an imaging surface via an optical lens system into an electric signal on a pixel-by-pixel basis and outputs the electric signal as a pixel signal
- the light receiving device of the present disclosure is not limited to such an imaging device.
- any device may be used as long as it receives incident light and converts the light into an electric charge.
- the signal to be output may be a signal of image information or a signal of distance measurement information.
- the first substrate having the photoelectric conversion portion and the storage portion and the second substrate having the readout circuit are arranged such that the surface on which the elements of the first substrate are formed and the elements of the second substrate are It is laminated so that the surfaces to be formed face each other.
- vias are provided that penetrate through a plurality of wiring layers and electrically connect the storage section and the readout circuit. Therefore, the capacity added to the storage section can be reduced, and the conversion efficiency can be improved.
- the present disclosure can also be configured as follows. (1) a first substrate having a plurality of photoelectric conversion units that photoelectrically convert light; and an accumulation unit that accumulates charges photoelectrically converted by the photoelectric conversion units; a second substrate having a readout circuit for outputting a first signal based on the charge accumulated in the accumulation portion, and laminated on the first substrate; a wiring layer including vias for electrically connecting the storage section and the readout circuit, The first substrate and the second substrate are laminated such that the first surface on which the elements of the first substrate are formed and the second surface on which the elements of the second substrate are formed face each other,
- the via is a light-receiving device that penetrates a plurality of layers in the wiring layer.
- the first substrate and the second substrate are laminated by bonding between electrodes, The light receiving device according to (1), wherein the via is directly connected to the joined electrode. (3) The light receiving device according to (1) or (2), wherein the via is directly connected to the first substrate. (4) The light receiving device according to (3), wherein the via is directly connected to the storage section of the first substrate. (5) The light receiving device according to (1) or (2), wherein the via is directly connected to the second substrate. (6) The light receiving device according to (5), wherein the via is directly connected to a gate of a transistor provided on the second substrate. (7) The light receiving device according to (6), wherein the transistor is a transistor of the readout circuit.
- the readout circuit includes an amplification transistor that generates the first signal; The light receiving device according to (1), wherein the via is electrically connected to the gate of the amplification transistor. (9) The light receiving device according to (8), wherein the via is directly connected to the gate of the amplification transistor. (10) The light receiving device according to any one of (1) to (9), wherein the via contains tungsten, cobalt, ruthenium, copper, molybdenum, or aluminum. (11) the wiring layer includes an insulating film having a dielectric constant lower than that of a silicon oxide film; The light receiving device according to any one of (1) to (10), wherein the via penetrates the insulating film.
- the protective film contains silicon and at least one of oxygen, nitrogen, and carbon.
- the width of the via is smaller than the width of the electrode in a direction orthogonal to the lamination direction of the first substrate and the second substrate.
- the wiring layer includes a first wiring layer provided on the first surface side of the first substrate and a second wiring layer provided on the second surface side of the second substrate, As the vias, a first via provided in the first wiring layer and electrically connected to the storage portion, and a first via provided in the second wiring layer and electrically connecting the first via and the readout circuit.
- the first via penetrates a plurality of layers in the first wiring layer
- the light receiving device according to (16), wherein the second via penetrates a plurality of layers in the second wiring layer.
- the light receiving device according to (16) or (17), wherein the second via is directly connected to the first via.
- the light receiving device according to any one of (16) to (18), wherein the first substrate and the second substrate are laminated by joining the first via and the second via.
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Abstract
Description
1.実施の形態
2.変形例
3.適用例
4.応用例
図1は、本開示の実施の形態に係る受光装置の一例である撮像装置の全体構成の一例を示すブロック図である。受光装置である撮像装置1は、入射した光を受光して光電変換する装置である。撮像装置(受光装置)1は、受光した光を光電変換して信号を生成する。撮像装置1は、光学レンズ系(不図示)を介して、被写体からの入射光(像光)を取り込む。撮像装置1は、例えばCMOS(Complementary Metal Oxide Semiconductor)イメージセンサであり、被写体の像を撮像する。
本実施の形態に係る受光装置(撮像装置1)は、光を光電変換する複数の光電変換部(フォトダイオードPD)と、光電変換部で光電変換された電荷を蓄積する蓄積部(フローティングディフュージョンFD)とを有する第1基板101と、蓄積部に蓄積された電荷に基づく第1信号(画素信号)を出力する読み出し回路45を有し、第1基板に積層される第2基板102と、蓄積部と読み出し回路とを電気的に接続するビア(貫通ビア17)を含む配線層(配線層111,121)と、を備える。第1基板と第2基板とは、第1基板の素子が形成される第1面(第1基板101の第1面11S1)と第2基板の素子が形成される第2面(第2基板102の第1面12S1)とが対向するように積層される。ビア(貫通ビア17)は、配線層における複数の層を貫通する。
(2-1.変形例1)
上述した実施の形態では、配線層内の異なる層の配線間を接続する貫通ビア17を設ける例について説明した。しかし、貫通ビア17は、半導体基板(例えば第1基板101又は第2基板102)に直接接続されてもよい。第1基板101の回路素子(例えばフローティングディフュージョンFD、転送トランジスタTr1等)に直接接続される第1の貫通ビア17aを設けるようにしてもよい。また、第2基板102の回路素子(例えば読み出し回路45のトランジスタ)に直接接続される第2の貫通ビア17bを設けるようにしてもよい。
撮像装置1は、貫通ビア17の周囲に保護膜を有していてもよい。配線層内において貫通ビア17を被覆するように保護膜を形成してもよい。図7は、変形例2に係る撮像装置の断面構成の一例を示す図である。図7に示す例では、配線層111において、第1の貫通ビア17aの周囲を覆うように保護膜29が設けられる。また、配線層121において、第2の貫通ビア17bの周囲を覆うように保護膜29が設けられる。保護膜29は、シリコンと、酸素、窒素及び炭素の少なくとも一つを含んで構成される。例えば、保護膜29は、シリコン酸化膜により構成されてもよい。
上述した実施の形態では、撮像装置1の構成例について説明したが、あくまでも一例であって、撮像装置1の構成は、上述した例に限られない。貫通ビアと接合用電極との接合を利用して、複数の基板間の接続を行うようにしてもよい。例えば、複数の貫通ビアと複数の接合用電極とが接合されることで、第1基板101と第2基板102とが接続される。
図14は、変形例4に係る撮像装置の断面構成の一例を示す図である。貫通ビア間の接合を利用して、複数の基板間の接続を行うようにしてもよい。例えば、第1の貫通ビア17aは、第2の貫通ビア17bと直接接続されていてもよい。第1基板101の複数の第1の貫通ビア17aと第2基板102の複数の第2の貫通ビア17bとが接合されることで、第1基板101と第2基板102とが接続される。
上述した実施の形態では、電極間の接合(例えばCu-Cu接合)によって、3次元接続を実現する例について説明した。しかし、基板間の接続の形態としては、Wafer on Wafer(ウェハオンウェハ)、Die to wafer(ダイトゥーウェハ)、Die to die(ダイトゥーダイ)のいずれかであってもよい。
上記撮像装置1等は、例えば、デジタルスチルカメラやビデオカメラ等のカメラシステムや、撮像機能を有する携帯電話等、撮像機能を備えたあらゆるタイプの電子機器に適用することができる。図9は、電子機器1000の概略構成を表したものである。
(移動体への応用例)
本開示に係る技術(本技術)は、様々な製品へ応用することができる。例えば、本開示に係る技術は、自動車、電気自動車、ハイブリッド電気自動車、自動二輪車、自転車、パーソナルモビリティ、飛行機、ドローン、船舶、ロボット等のいずれかの種類の移動体に搭載される装置として実現されてもよい。
本開示に係る技術(本技術)は、様々な製品へ応用することができる。例えば、本開示に係る技術は、内視鏡手術システムに適用されてもよい。
(1)
光を光電変換する複数の光電変換部と、前記光電変換部で光電変換された電荷を蓄積する蓄積部とを有する第1基板と、
前記蓄積部に蓄積された電荷に基づく第1信号を出力する読み出し回路を有し、前記第1基板に積層される第2基板と、
前記蓄積部と前記読み出し回路とを電気的に接続するビアを含む配線層と
を備え、
前記第1基板と前記第2基板とは、前記第1基板の素子が形成される第1面と前記第2基板の素子が形成される第2面とが対向するように積層され、
前記ビアは、前記配線層における複数の層を貫通する
受光装置。
(2)
前記第1基板と前記第2基板とは、電極間の接合によって積層され、
前記ビアは、接合された電極に直接接続されている
前記(1)に記載の受光装置。
(3)
前記ビアは、前記第1基板に直接接続されている
前記(1)または(2)に記載の受光装置。
(4)
前記ビアは、前記第1基板の前記蓄積部に直接接続されている
前記(3)に記載の受光装置。
(5)
前記ビアは、前記第2基板に直接接続されている
前記(1)または(2)に記載の受光装置。
(6)
前記ビアは、前記第2基板に設けられたトランジスタのゲートに直接接続されている
前記(5)に記載の受光装置。
(7)
前記トランジスタは、前記読み出し回路のトランジスタである
前記(6)に記載の受光装置。
(8)
前記読み出し回路は、前記第1信号を生成する増幅トランジスタを含み、
前記ビアは、前記増幅トランジスタのゲートに電気的に接続されている
前記(1)に記載の受光装置。
(9)
前記ビアは、前記増幅トランジスタのゲートに直接接続されている
前記(8)に記載の受光装置。
(10)
前記ビアは、タングステン、コバルト、ルテニウム、銅、モリブデン、またはアルミニウムを含んで構成されている
前記(1)から(9)のいずれか1つに記載の受光装置。
(11)
前記配線層は、シリコン酸化膜の誘電率よりも低い誘電率を有する絶縁膜を含み、
前記ビアは、前記絶縁膜を貫通する
前記(1)から(10)のいずれか1つに記載の受光装置。
(12)
前記ビアと前記絶縁膜との間に設けられる保護膜を有する
前記(11)に記載の受光装置。
(13)
前記保護膜は、シリコンと、酸素、窒素及び炭素の少なくとも一つを含んで構成されている
前記(12)に記載の受光装置。
(14)
前記第1基板と前記第2基板とは、前記ビアと電極との接合によって積層されている
前記(1)から(13)のいずれか1つに記載の受光装置。
(15)
前記第1基板と前記第2基板との積層方向と直交する方向において、前記ビアの幅は、前記電極の幅よりも小さい
前記(14)に記載の受光装置。
(16)
前記配線層として、前記第1基板の第1面側に設けられる第1配線層と、前記第2基板の第2面側に設けられる第2配線層とを有し、
前記ビアとして、前記第1配線層に設けられ、前記蓄積部に電気的に接続される第1ビアと、前記第2配線層に設けられ、前記第1ビアと前記読み出し回路とを電気的に接続する第2ビアとを有する
前記(1)から(15)のいずれか1つに記載の受光装置。
(17)
前記第1ビアは、前記第1配線層における複数の層を貫通し、
前記第2ビアは、前記第2配線層における複数の層を貫通する
前記(16)に記載の受光装置。
(18)
前記第2ビアは、前記第1ビアに直接接続されている
前記(16)または(17)に記載の受光装置。
(19)
前記第1基板と前記第2基板とは、前記第1ビアと前記第2ビアとの接合によって積層されている
前記(16)から(18)のいずれか1つに記載の受光装置。
Claims (19)
- 光を光電変換する複数の光電変換部と、前記光電変換部で光電変換された電荷を蓄積する蓄積部とを有する第1基板と、
前記蓄積部に蓄積された電荷に基づく第1信号を出力する読み出し回路を有し、前記第1基板に積層される第2基板と、
前記蓄積部と前記読み出し回路とを電気的に接続するビアを含む配線層と
を備え、
前記第1基板と前記第2基板とは、前記第1基板の素子が形成される第1面と前記第2基板の素子が形成される第2面とが対向するように積層され、
前記ビアは、前記配線層における複数の層を貫通する
受光装置。 - 前記第1基板と前記第2基板とは、電極間の接合によって積層され、
前記ビアは、接合された電極に直接接続されている
請求項1に記載の受光装置。 - 前記ビアは、前記第1基板に直接接続されている
請求項1に記載の受光装置。 - 前記ビアは、前記第1基板の前記蓄積部に直接接続されている
請求項3に記載の受光装置。 - 前記ビアは、前記第2基板に直接接続されている
請求項1に記載の受光装置。 - 前記ビアは、前記第2基板に設けられたトランジスタのゲートに直接接続されている
請求項1に記載の受光装置。 - 前記トランジスタは、前記読み出し回路のトランジスタである
請求項6に記載の受光装置。 - 前記読み出し回路は、前記第1信号を生成する増幅トランジスタを含み、
前記ビアは、前記増幅トランジスタのゲートに電気的に接続されている
請求項1に記載の受光装置。 - 前記ビアは、前記増幅トランジスタのゲートに直接接続されている
請求項8に記載の受光装置。 - 前記ビアは、タングステン、コバルト、ルテニウム、銅、モリブデン、またはアルミニウムを含んで構成されている
請求項1に記載の受光装置。 - 前記配線層は、シリコン酸化膜の誘電率よりも低い誘電率を有する絶縁膜を含み、
前記ビアは、前記絶縁膜を貫通する
請求項1に記載の受光装置。 - 前記ビアと前記絶縁膜との間に設けられる保護膜を有する
請求項11に記載の受光装置。 - 前記保護膜は、シリコンと、酸素、窒素及び炭素の少なくとも一つを含んで構成されている
請求項12に記載の受光装置。 - 前記第1基板と前記第2基板とは、前記ビアと電極との接合によって積層されている
請求項1に記載の受光装置。 - 前記第1基板と前記第2基板との積層方向と直交する方向において、前記ビアの幅は、前記電極の幅よりも小さい
請求項14に記載の受光装置。 - 前記配線層として、前記第1基板の第1面側に設けられる第1配線層と、前記第2基板の第2面側に設けられる第2配線層とを有し、
前記ビアとして、前記第1配線層に設けられ、前記蓄積部に電気的に接続される第1ビアと、前記第2配線層に設けられ、前記第1ビアと前記読み出し回路とを電気的に接続する第2ビアとを有する
請求項1に記載の受光装置。 - 前記第1ビアは、前記第1配線層における複数の層を貫通し、
前記第2ビアは、前記第2配線層における複数の層を貫通する
請求項16に記載の受光装置。 - 前記第2ビアは、前記第1ビアに直接接続されている
請求項16に記載の受光装置。 - 前記第1基板と前記第2基板とは、前記第1ビアと前記第2ビアとの接合によって積層されている
請求項16に記載の受光装置。
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WO2011077580A1 (ja) * | 2009-12-26 | 2011-06-30 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP2012164870A (ja) * | 2011-02-08 | 2012-08-30 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
JP2014022561A (ja) * | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
JP2015076502A (ja) * | 2013-10-09 | 2015-04-20 | ソニー株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
WO2019244514A1 (ja) * | 2018-06-19 | 2019-12-26 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
JP2020088380A (ja) | 2018-11-16 | 2020-06-04 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
JP2020145427A (ja) * | 2019-02-28 | 2020-09-10 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および、撮像システム |
JP2021072444A (ja) * | 2019-11-01 | 2021-05-06 | 三星電子株式会社Samsung Electronics Co.,Ltd. | イメージセンサー |
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WO2011077580A1 (ja) * | 2009-12-26 | 2011-06-30 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP2012164870A (ja) * | 2011-02-08 | 2012-08-30 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
JP2014022561A (ja) * | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
JP2015076502A (ja) * | 2013-10-09 | 2015-04-20 | ソニー株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
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JP2020088380A (ja) | 2018-11-16 | 2020-06-04 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
JP2020145427A (ja) * | 2019-02-28 | 2020-09-10 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および、撮像システム |
JP2021072444A (ja) * | 2019-11-01 | 2021-05-06 | 三星電子株式会社Samsung Electronics Co.,Ltd. | イメージセンサー |
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