WO2023100980A1 - Module semi-conducteur, dispositif de conversion de puissance et procédé permettant de produire un dispositif de conversion de puissance - Google Patents

Module semi-conducteur, dispositif de conversion de puissance et procédé permettant de produire un dispositif de conversion de puissance Download PDF

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Publication number
WO2023100980A1
WO2023100980A1 PCT/JP2022/044377 JP2022044377W WO2023100980A1 WO 2023100980 A1 WO2023100980 A1 WO 2023100980A1 JP 2022044377 W JP2022044377 W JP 2022044377W WO 2023100980 A1 WO2023100980 A1 WO 2023100980A1
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Prior art keywords
terminal
semiconductor module
protruding
power
molding material
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PCT/JP2022/044377
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English (en)
Japanese (ja)
Inventor
恭生 鶴岡
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ニデック株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present disclosure relates to a semiconductor module, a power converter, and a method of manufacturing the power converter.
  • IGBT Insulated Gate Bipolar Transistor
  • Patent Document 1 discloses a semiconductor module used in a power converter. Specifically, in Patent Document 1, a circuit board on which six switching elements and six free wheel diodes are mounted, and a cooling plate bonded to the circuit board via a bonding material such as solder are combined into a mold resin. A semiconductor module integrally covered with is disclosed.
  • the conventional technology described above has room for further improvement in terms of increasing the productivity of the power converter.
  • the present disclosure provides a technology that can improve the productivity of power converters.
  • a semiconductor module includes an insulating plate, a circuit section, a power terminal, and a molding material.
  • the circuit section includes a wiring layer arranged on the insulating plate and at least one switching element mounted on the wiring layer.
  • the power terminal is connected to the circuit section.
  • the molding material covers at least part of each of the insulating plate, the circuit section, and the power terminal.
  • the power terminal protrudes from the first side surface of the molding material and from the second side surface opposite to the first side surface in a plan view of the insulating plate.
  • FIG. 1 is a diagram showing the circuit configuration of a semiconductor module according to an embodiment.
  • FIG. 2 is a schematic plan view of the semiconductor module according to the embodiment.
  • FIG. 3 is a schematic side view of the semiconductor module according to the embodiment. 4 is a schematic cross-sectional view taken along line IV-IV shown in FIG. 3.
  • FIG. 5 is a diagram showing the circuit configuration of the power converter according to the embodiment.
  • FIG. 6 is a schematic plan view of the power converter according to the embodiment.
  • FIG. 7 is a schematic side view of the power converter according to the embodiment.
  • FIG. 8 is a flow chart showing the manufacturing process of the power conversion device according to the embodiment.
  • FIG. 9 is a schematic side perspective view of a semiconductor module according to a first modification.
  • FIG. 9 is a schematic side perspective view of a semiconductor module according to a first modification.
  • FIG. 10 is a schematic side perspective view of a semiconductor module according to a second modification.
  • FIG. 11 is a schematic side view of a power conversion device according to a second modification.
  • FIG. 12 is a schematic side see-through view of a semiconductor module according to a third modification.
  • FIG. 13 is a schematic side view of a power converter according to a third modified example.
  • Embodiments for implementing a semiconductor module, a power conversion device, and a method for manufacturing a power conversion device according to the present disclosure will be described in detail below with reference to the drawings. Note that the present disclosure is not limited by this embodiment. Further, each embodiment can be appropriately combined within a range that does not contradict the processing contents. Also, in each of the following embodiments, the same parts are denoted by the same reference numerals, and overlapping descriptions are omitted.
  • the semiconductor module described in Patent Document 1 includes a circuit board on which six switching elements and six free wheel diodes are mounted, and a cooling plate bonded to the circuit board with a bonding material such as solder. It has an integrated configuration.
  • a semiconductor module having such a configuration requires a relatively large mold, resulting in a high mold cost.
  • the installation space of the molding device is likely to be restricted, and it may be difficult to efficiently arrange the molding device in a limited installation place such as a factory.
  • one of the six switching elements integrated with the mold resin becomes defective, the remaining five switching elements are also discarded, resulting in a low yield.
  • FIG. 1 is a diagram showing the circuit configuration of a semiconductor module according to an embodiment.
  • the semiconductor module according to the embodiment constitutes part of a power converter that converts DC power supplied from a DC power supply into AC power.
  • the semiconductor module 1 includes a power supply terminal 3, a circuit section 5, and an input/output terminal 7.
  • the power supply terminal 3 is a terminal connected to a DC power supply (not shown). Specifically, the power supply terminal 3 includes a positive terminal 31 connected to the positive side of the DC power supply and a negative terminal 32 connected to the negative side. In an embodiment, the power terminals 3 comprise two positive terminals 31 and two negative terminals 32 . This point will be described later with reference to FIG. 4 and the like.
  • the circuit section 5 includes two switching elements 51 and two diodes 52 .
  • Two switching elements 51 are connected in series between the positive terminal 31 and the negative terminal 32 . Also, each of the two diodes 52 is connected in anti-parallel to each of the two switching elements 51 .
  • the switching element 51 is, for example, an IGBT.
  • a diode 52 is a freewheeling diode for protecting the IGBT.
  • the switching element 51 may be a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or a GTO (Gate Turn-Off) thyristor.
  • the input/output terminal 7 includes a load terminal 71 and a control terminal 72 .
  • the load terminal 71 is an output terminal for outputting AC power to a load such as a motor.
  • a load terminal 71 is connected to a connection node between two switching elements 51 .
  • the control terminal 72 is an input terminal to which a drive signal for driving the switching element 51 is input.
  • the semiconductor module 1 configured as described above alternately turns on the two switching elements 51 in accordance with the drive signal input from the control terminal 72, thereby driving the direct current input between the positive terminal 31 and the negative terminal 32.
  • the electric power is converted into AC power and output from the load terminal 71 .
  • FIG. 2 is a schematic plan view of the semiconductor module 1 according to the embodiment.
  • FIG. 3 is a schematic side view of the semiconductor module 1 according to the embodiment.
  • 4 is a schematic cross-sectional view taken along line IV-IV shown in FIG. 3.
  • FIG. 2 is a schematic plan view of the semiconductor module 1 according to the embodiment.
  • FIG. 3 is a schematic side view of the semiconductor module 1 according to the embodiment.
  • 4 is a schematic cross-sectional view taken along line IV-IV shown in FIG. 3.
  • the semiconductor module 1 further includes an insulating plate 2, a molding material 4, and an alignment mark 8. As shown in FIGS. 2 and 3, the semiconductor module 1 further includes an insulating plate 2, a molding material 4, and an alignment mark 8. As shown in FIGS.
  • the insulating plate 2 is a plate-like member having a square shape in plan view, and has a first principal surface, a second principal surface located on the opposite side of the first principal surface, and the first principal surface and the second principal surface. It has multiple sides that connect.
  • the insulating plate 2 is made of an insulating material.
  • the insulating plate 2 is made of Al 2 O 3 (alumina), AlN (aluminum nitride), SiN (silicon nitride), or the like.
  • a wiring layer 53 is provided on the first main surface (here, the upper surface) of the insulating plate 2 .
  • the wiring layer 53 forms part of the circuit section 5 .
  • Switching element 51 and diode 52 are mounted on wiring layer 53 .
  • a conductive layer 23 is provided on the second main surface (here, the lower surface) of the insulating plate 2 .
  • the insulating plate 2, the wiring layer 53 and the conductive layer 23 are, for example, DCB (Direct Copper Bonding) substrates.
  • the wiring layer 53 and the conductive layer 23 are made of Cu (copper).
  • the insulating plate 2, the wiring layer 53 and the conductive layer 23 may be a DAB (Direct Aluminum Bonding) substrate in which the wiring layer 53 and the conductive layer 23 are made of Al (aluminum).
  • the insulating plate 2, the wiring layer 53 and the conductive layer 23 may be an AMB (Active Metal Brazing) substrate.
  • the molding material 4 is an insulating sealing member that covers at least part of each of the insulating plate 2, the circuit section 5, and the power supply terminal 3. Mold material 4 is made of, for example, resin such as epoxy resin.
  • the molding material 4 has a quadrangular shape when viewed from above in a direction perpendicular to the insulating plate 2 .
  • the four side surfaces of the molding material 4 are hereinafter referred to as a first side surface 41, a second side surface 42, a third side surface 43 and a fourth side surface 44, respectively.
  • the second side 42 is a side opposite to the first side 41
  • the fourth side 44 is a side opposite to the third side 43 .
  • the circuit section 5 is composed of two switching elements 51, two diodes 52, a wiring layer 53, a bus bar 54, and the like. Two switching elements 51 and two diodes 52 are electrically connected by wiring layer 53, bus bar 54 and the like so as to implement the circuit configuration of circuit section 5 shown in FIG.
  • FIG. 4 shows an example in which the positive terminal 31 and the negative terminal 32 are connected to the wiring layer 53 of the circuit section 5, the positive terminal 31 and the negative terminal 32 are connected to the bus bar 54. Alternatively, it may be connected to the switching element 51 or the diode 52 .
  • the two positive terminals 31 are electrically connected to each other via the wiring layer 53, for example.
  • the two negative terminals 32 are also electrically connected via the wiring layer 53, for example.
  • Two of the plurality of control terminals 72 are input terminals to which drive signals for driving the switching elements 51 are input.
  • the plurality of control terminals 72 may include, for example, output terminals for extracting signals output from temperature sensors, current sensors, or the like (not shown).
  • an example in which the semiconductor module 1 has five control terminals 72 is shown.
  • the number of control terminals 72 is not limited to five.
  • the load terminal 71 protrudes from the third side surface 43 of the molding material 4 .
  • a plurality of control terminals 72 protrude from the fourth side surface 44 of the molding material 4 .
  • the load terminal 71 and the plurality of control terminals 72 protrude from surfaces other than the first side surface 41 and the second side surface 42 of the molding material 4 .
  • the molding material 4 covers the first main surface of the insulating plate 2 not entirely but partially. In other words, the first main surface of insulating plate 2 and wiring layer 53 located on the first main surface are partially exposed from molding material 4 . In the example shown in FIG. 2, the first main surface of the insulating plate 2 and the wiring layer 53 are exposed from the molding material 4 at both ends in the X-axis direction.
  • FIG. 2 shows an example in which the molding material 4 reaches the first main surface of the insulating plate 2 and both ends of the wiring layer 53 in the Y-axis direction, the molding material 4 is not necessarily insulating. It does not have to reach both ends of the first main surface of the plate 2 and the wiring layer 53 in the Y-axis direction.
  • the alignment mark 8 is provided in a region exposed from the molding material 4 on the first main surface of the insulating plate 2 .
  • the alignment mark 8 may be provided on the wiring layer 53 exposed from the molding material 4 .
  • the alignment mark 8 may be a part of the wiring pattern, or may be a pattern formed on the wiring layer 53 separately from the wiring pattern.
  • the alignment mark 8 may be, for example, a through hole penetrating through the insulating plate 2 .
  • the alignment mark 8 is provided at a position that does not overlap with the power supply terminal 3, the load terminal 71, the control terminal 72, etc. in plan view.
  • the alignment mark 8 is used for positioning when the semiconductor module 1 is arranged on the base plate 111 in the manufacturing process of the power conversion device 100, which will be described later, but this point will be described later. Note that the shape of the alignment mark 8 is not limited to that illustrated.
  • the two positive terminals 31 provided in the semiconductor module 1 protrude from the first side surface 41 and the opposite second side surface 42 of the molding material 4, respectively.
  • the two negative terminals 32 of the semiconductor module 1 also protrude from the first side surface 41 and the opposite second side surface 42 of the molding material 4 .
  • the positive electrode terminal 31 protruding from the first side surface 41 and the positive electrode terminal 31 protruding from the second side surface 42 are arranged along the direction from one side to the other of the first side surface 41 and the second side surface 42 (here, the Y-axis direction). It has a first surface and a second surface opposite the first surface.
  • the first surface may be the bottom surface of the positive terminal 31 .
  • the second surface is the top surface of the positive electrode terminal 31 .
  • the first surface may be the left side surface of the positive electrode terminal 31 .
  • the second surface is the right side surface of the positive electrode terminal 31 .
  • the first surface may be the upper surface of the positive electrode terminal 31 or the right side surface.
  • the negative electrode terminal 32 protruding from the first side surface 41 and the negative electrode terminal 32 protruding from the second side surface 42 are arranged between the third surface and the third surface along the direction from one side to the other of the first side surface 41 and the second side surface 42 . and a fourth surface located opposite the surface.
  • the third surface may be the bottom surface of the negative terminal 32 .
  • the fourth surface is the top surface of the negative terminal 32 .
  • the first surface may be the left side surface of the negative terminal 32 .
  • the second surface is the right side surface of the negative terminal 32 .
  • the first surface may be the upper surface of the negative terminal 32 or the right side surface.
  • the positive terminal 31 and the negative terminal 32 protrude outward from the insulating plate 2 in plan view.
  • the insulating plate 2 connects the positive terminals 31 and the negative terminals 32 together. can be inhibited.
  • the portion of the positive electrode terminal 31 that protrudes from the first side surface 41 of the molding material 4 protrudes from the first side surface 41 and the portion that protrudes from the second side surface 42 of the positive electrode terminal 31 that protrudes from the second side surface 42 . is a surface parallel to the first side surface 41 and the second side surface 42, in other words, a surface orthogonal to the direction from one side to the other of the first side surface 41 and the second side surface 42 (here, the Y-axis direction), They are arranged symmetrically with respect to a virtual plane S that bisects the insulating plate 2 (see FIGS. 2 and 4).
  • the end faces of the positive terminals 31 of the two adjacent semiconductor modules 1 can be brought into contact with each other over the entire surface in the manufacturing process of the power conversion device 100, which will be described later. Therefore, two adjacent semiconductor modules 1 can be more reliably connected to each other.
  • a portion of the negative terminal 32 protruding from the first side surface 41 of the molding material 4 protrudes from the first side surface 41 and a portion of the negative electrode terminal 32 protruding from the second side surface 42 protrudes from the second side surface 42 .
  • the portion that is formed is arranged plane-symmetrically with respect to the virtual plane S. As shown in FIG. With this configuration, the end surfaces of the negative terminals 32 of the two adjacent semiconductor modules 1 can be brought into contact with each other in the manufacturing process of the power conversion device 100, which will be described later. Therefore, two adjacent semiconductor modules 1 can be more reliably connected to each other.
  • FIG. 5 is a diagram showing the circuit configuration of the power converter 100 according to the embodiment.
  • the power conversion device 100 includes three semiconductor modules 1 connected in parallel. Two adjacent semiconductor modules 1 are connected at their positive terminals 31 and at their negative terminals 32 . The three semiconductor modules 1 connected in parallel in this manner form a three-phase bridge circuit.
  • DC power supply 200 and the capacitor 300 are connected in parallel to the positive terminal 31 and the negative terminal 32 closest to the DC power supply 200 .
  • DC power supply 200 is, for example, a battery (storage battery).
  • DC power supply 200 may be a lithium ion battery, a nickel hydrogen battery, a solar battery, a fuel cell, a DC-DC converter, an AC-DC converter, a capacitor, or the like.
  • Capacitor 300 is, for example, a film capacitor. Capacitor 300 smoothes the DC power supply voltage applied between positive terminal 31 and negative terminal 32 .
  • Each load terminal 71 of the three semiconductor modules 1 is connected to the load 400 .
  • load 400 is a three-phase motor, and three load terminals 71 are connected to the U-phase, V-phase, and W-phase coils of load 400 .
  • Power conversion device 100 turns on and off a plurality of switching elements 51 according to drive signals supplied from drive circuit 500 to convert DC power supplied from DC power supply 200 into three-phase AC power and load 400 .
  • the drive circuit 500 outputs a drive signal to turn on the switching element 51 and a drive signal to turn off the switching element 51 via the control terminal 72 (see FIG. 2). It is supplied to the switching element 51 .
  • the power conversion device 100 is used as an inverter that supplies three-phase AC power to a three-phase motor that rotates the wheels of a vehicle.
  • DC power supply 200 is, for example, a battery mounted on a vehicle.
  • the power conversion device 100 is not limited to the above applications.
  • FIG. 6 is a schematic plan view of the power converter 100 according to the embodiment.
  • FIG. 7 is a schematic side view of the power converter 100 according to the embodiment.
  • the power conversion device 100 includes three semiconductor modules 1 and a cooling section 101.
  • the cooling part 101 is, for example, a heat sink, and is provided mainly to release heat generated in the switching element 51 to the outside.
  • the cooling part 101 includes a base plate 111 and a plurality of heat radiation fins 112 .
  • the base plate 111 is, for example, a plate-like member having a rectangular shape in a plan view, and has a first main surface, a second main surface opposite to the first main surface, and a first main surface and a second main surface. It has a plurality of side surfaces connecting the Three semiconductor modules 1 are arranged on the first main surface (here, the upper surface) of the base plate 111 .
  • a plurality of radiation fins 112 are provided on the second main surface (here, the lower surface) of base plate 111 .
  • the base plate 111 and the plurality of radiating fins 112 are made of a member with relatively high thermal conductivity such as Cu (copper) or Al (aluminum).
  • the base plate 111 and the plurality of radiating fins 112 may be integrated or separate.
  • the cooling unit 101 includes a plurality of heat radiating fins 112
  • the cooling unit 101 only needs to include at least the base plate 111 and does not necessarily need to include the plurality of heat radiating fins 112 .
  • the cooling unit 101 may dissipate heat by flowing a coolant through a channel formed inside the base plate 111 .
  • Alignment marks 113 used for positioning the semiconductor module 1 are provided on the first main surface of the base plate 111 .
  • the alignment mark 113 is provided at a position not covered by the semiconductor module 1 when the base plate 111 is viewed from above.
  • Alignment mark 113 may be a pattern provided on the first main surface of base plate 111 .
  • the alignment mark 113 may be a recess formed in the first main surface of the base plate 111 .
  • the recess may be, for example, a through hole or a groove.
  • a component previously provided on the first main surface of base plate 111 may be used as alignment mark 113 .
  • the shape of the alignment mark 113 is not limited to the illustrated one.
  • the three semiconductor modules 1 are arranged on the first main surface of the base plate 111 with the bonding material 102 interposed therebetween.
  • the bonding material 102 is solder, for example.
  • the bonding material 102 may be an organic polymer compound to which a thermally conductive material is added.
  • the thermally conductive material is not particularly limited as long as it has a high thermal conductivity, and examples thereof include fillers such as silver, aluminum, copper, graphite fiber, and alumina.
  • the organic polymer compound is not particularly limited, and examples thereof include grease, paste, adhesive, thermoplastic resin, and the like.
  • the bonding material 102 is provided between the conductive layer 23 (see FIG. 3) provided on the second main surface of the insulating plate 2 and the first main surface of the base plate 111 . 7, the conductive layer 23 is omitted.
  • the three semiconductor modules 1 are arranged linearly on the base plate 111 . Specifically, the three semiconductor modules 1 are arranged such that the first side surface 41 of the molding material 4 included in one semiconductor module 1 and the second side surface 41 of the molding material 4 included in the other semiconductor module 1 adjacent to the one semiconductor module 1 . It is arranged so as to face the side surface 42 .
  • the three semiconductor modules 1 are electrically connected by connecting the positive terminals 31 to each other and the negative terminals 32 to each other. Specifically, the positive terminal 31 protruding from the first side surface 41 of one of the two adjacent semiconductor modules 1 is joined to the positive terminal 31 protruding from the second side surface 42 of the other semiconductor module 1 . be done. Also, the negative terminal 32 protruding from the first side surface 41 of one of the two adjacent semiconductor modules 1 is joined to the negative terminal 32 protruding from the second side surface 42 of the other semiconductor module 1 .
  • the power conversion device 100 connects the positive terminals 31 and the negative terminals 32 of two adjacent semiconductor modules 1 among the three semiconductor modules 1 arranged on the base plate 111. It is composed by
  • FIG. 8 is a flow chart showing the manufacturing process of the power conversion device 100 according to the embodiment.
  • step S101 an arrangement step of arranging three semiconductor modules 1 on the base plate 111 of the cooling unit 101 via the bonding material 102 is performed.
  • an image of the alignment mark 113 is captured from above the horizontally placed base plate 111 using an imaging unit such as a CCD (Charge Coupled Device) camera.
  • the three semiconductor modules 1 are sequentially arranged on the first main surface of the base plate 111 with reference to the imaged alignment marks 113 .
  • the positional relationship between the alignment marks 113 provided on the base plate 111 and the alignment marks 8 provided on the semiconductor module 1 is determined in advance.
  • Semiconductor module 1 is arranged on the first main surface of base plate 111 so that alignment mark 8 is positioned at a predetermined position with alignment mark 113 as a reference.
  • the semiconductor module 1 is bonded to the base plate 111 with the bonding material 102 .
  • the melting point of the bonding material 102 according to the embodiment is lower than the glass transition temperature of the molding material 4 included in the semiconductor module 1 .
  • the three semiconductor modules 1 can be connected to the positive terminals 31 and the negative terminals of the adjacent semiconductor modules 1. 32 are in contact with each other.
  • the end faces of the positive terminal 31 and the end faces of the negative terminal 32 are in contact with each other.
  • the placement step may be performed using a robot arm, for example.
  • the semiconductor module 1 is placed on the base plate 111 by using a robot arm so that the imaged alignment mark 8 fits in a predetermined position with reference to the alignment mark 113 while the alignment mark 8 is imaged by the imaging unit. should be placed.
  • a connection step is performed to connect the positive terminals 31 and the negative terminals 32 of the adjacent semiconductor modules 1 (step S102).
  • the positive terminals 31 and the negative terminals 32 of the adjacent semiconductor modules 1 are joined by welding.
  • the welding method is not particularly limited, as an example, the positive terminals 31 and the negative terminals 32 may be joined by laser welding. In this case, the welding process can be facilitated by piling up the solder on the portion to be welded.
  • the positive terminals 31 and the negative terminals 32 may be joined by electric welding (arc welding). Also in this case, the welding process can be facilitated by applying solder to the welded portion.
  • the positive terminals 31 and the negative terminals 32 may be joined by electron beam welding, gas welding, pressure welding, or the like. Also, the positive terminals 31 and the negative terminals 32 may be joined by a welding method in which heat, sound wave, electricity, light and pressure are applied singly or simultaneously.
  • the power conversion device 100 By joining the positive terminals 31 and the negative terminals 32 of the adjacent semiconductor modules 1 in this way, the three semiconductor modules 1 are electrically connected. Thereby, the power conversion device 100 according to the embodiment is obtained.
  • the power conversion device 100 has a configuration in which three semiconductor modules 1, which are so-called 2-in-1 type power modules, are mounted on one base plate 111.
  • the mold required for forming the molding material 4 can be made smaller than the 6-in-1 type power module described in Patent Document 1. That is, the mold cost can be kept low.
  • the molding die becomes smaller, the installation space of the molding device is less likely to be restricted, so that the molding device can be efficiently arranged in a limited installation place such as a factory.
  • the yield can be increased. can.
  • productivity can be improved.
  • the power conversion device 100 can be miniaturized. Further, by connecting the three semiconductor modules 1 with the positive terminals 31 and with the negative terminals 32, the three semiconductor modules 1 can be arranged at high density, so that the power converter 100 can be miniaturized. be able to. Moreover, according to the power conversion device 100 according to the embodiment, the positive terminals 31 and the negative terminals 32 of the three semiconductor modules 1 can each be put together at one place.
  • the load terminals 71 and the plurality of control terminals 72 of the three semiconductor modules 1 connected by the positive terminals 31 and the negative terminals 32 are constant, the load terminals 71 and the plurality of control terminals 72 are It becomes possible to perform wiring connection collectively using a wire harness, for example. Also by this, the productivity of the power converter 100 can be improved.
  • the power converter 100 includes one cooling unit 101 for three semiconductor modules 1 .
  • the cooling unit 101 includes one cooling unit 101 for three semiconductor modules 1 .
  • only one cooling source is required to supply coolant to the cooling unit 101, so the cooling efficiency is high.
  • FIG. 9 shows a schematic perspective side view of the semiconductor module 1 along the direction from the first side surface 41 to the second side surface 42 of the molding material 4 (here, the Y-axis positive direction).
  • the positive terminal 31 and the negative terminal 32 protruding from the first side surface 41 of the molding material 4 and the positive terminal 31 and the negative terminal 32 protruding from the second side surface 42 are arranged on the imaginary plane S (FIGS. 2 and 4). ) have been described.
  • the positive electrode terminal 31 and the negative electrode terminal protrude from the first side surface 41 .
  • 32 and the positions of the end surfaces of the positive electrode terminal 31 and the negative electrode terminal 32 projecting from the second side surface 42 have been described.
  • the positional relationship between the positive terminal 31 and the negative terminal 32 projecting from the first side surface 41 and the positive terminal 31 and the negative terminal 32 projecting from the second side surface 42 is not limited to the above example.
  • the end surface of the positive electrode terminal 31 protruding from the first side surface 41 and the end surface of the positive electrode terminal 31 protruding from the second side surface 42 are at least partially separated from each other. should overlap. Thereby, it is possible to bring the end faces of the positive terminals 31 of two adjacent semiconductor modules 1 into contact with each other. The same applies to the negative terminal 32 .
  • FIG. 9 when the semiconductor module 1 is seen through from the side, the end surface of the positive electrode terminal 31 protruding from the first side surface 41 and the end surface of the positive electrode terminal 31 protruding from the second side surface 42 are at least partially separated from each other. should overlap. Thereby, it is possible to bring the end faces of the positive terminals 31 of two adjacent semiconductor modules 1 into contact with each other. The same applies to the negative terminal 32 .
  • hatching indicates the overlapping region between the end surface of the negative electrode terminal 32 protruding from the first side surface 41 and the end surface of the negative electrode terminal 32 protruding from the second side surface 42 .
  • FIG. 10 is a schematic side see-through view of a semiconductor module 1 according to a second modification.
  • FIG. 11 is a schematic side view of the power conversion device 100 according to the second modification.
  • FIG. 11 shows an enlarged connection portion of the two positive terminals 31 and the two negative terminals 32 of the power converter 100 .
  • the positive terminal 31 protrudes from the first side surface 41 .
  • the second surface (here, the upper surface) of the positive electrode terminal 31 protruding from the second side surface 42 may overlap.
  • the third surface (here, the bottom surface) of the negative terminal 32 projecting from the first side surface 41 and the fourth surface (here, the top surface) of the negative electrode terminal 32 projecting from the second side surface 42 may overlap.
  • the positive terminals 31 of the two adjacent semiconductor modules 1 are arranged on the first surface (here, the bottom surface) and the second surface (here, the top surface). contact at.
  • the negative terminals 32 of two adjacent semiconductor modules 1 are in contact with each other on the third surface (here, the bottom surface) and the fourth surface (here, the top surface). Thereby, two adjacent semiconductor modules 1 can be electrically connected.
  • the contact points between the two positive terminals 31 may be the upper and lower surfaces of the positive terminals 31 .
  • the contact points of the two negative terminals 32 may be the upper and lower surfaces of the negative terminals 32 .
  • the positional relationship between the positive terminal 31 protruding from the first side surface 41 and the positive terminal 31 protruding from the second side surface 42 may be reverse to the positional relationship shown in FIGS.
  • the positional relationship between the negative terminal 32 protruding from the first side surface 41 and the negative terminal 32 protruding from the second side surface 42 may be reverse to the positional relationship shown in FIGS.
  • the positive terminal 31 protruding from the first side surface 41 may be positioned below the positive terminal 31 protruding from the second side surface 42
  • the negative terminal 32 protruding from the first side surface 41 may protrude from the second side surface 42 .
  • the negative terminal 32 protruding from the first side surface 41 protrudes from the second side surface 42 . It may be located above the terminal 32 .
  • FIG. 12 is a schematic side see-through view of a semiconductor module 1 according to a third modified example.
  • FIG. 13 is a schematic side view of the power conversion device 100 according to the third modification.
  • FIG. 13 shows an enlarged view of the connection points of the two positive terminals 31 and the two negative terminals 32 of the power converter 100 .
  • the positive terminal 31 protrudes from the first side surface 41 .
  • the second surface (here, right side) of the positive electrode terminal 31 projecting from the second side surface 42 may overlap.
  • the third surface (here, the left side) of the negative electrode terminal 32 projecting from the first side surface 41 and the fourth surface (here, the right side) of the negative electrode terminal 32 projecting from the second side surface 42 overlap each other. good too.
  • the positive terminals 31 of the two adjacent semiconductor modules 1 are arranged on the first surface (here, the left side) and the second surface (here, the right side). Similarly, the negative terminals 32 of two adjacent semiconductor modules 1 are in contact with each other on the third surface (here, the left side) and the fourth surface (here, the right side). Thereby, two adjacent semiconductor modules 1 can be electrically connected.
  • the contact points between the two positive terminals 31 may be the left and right side surfaces of the positive terminal 31 .
  • the contact points of the two negative terminals 32 may be the left and right side surfaces of the negative terminals 32 .
  • the positional relationship between the positive terminal 31 protruding from the first side surface 41 and the positive terminal 31 protruding from the second side surface 42 may be reverse to the positional relationship shown in FIGS.
  • the positional relationship between the negative terminal 32 protruding from the first side surface 41 and the negative terminal 32 protruding from the second side surface 42 may be reverse to the positional relationship shown in FIGS.
  • the positive terminal 31 protruding from the first side surface 41 may be positioned to the left of the positive terminal 31 protruding from the second side surface 42
  • the negative terminal 32 protruding from the first side surface 41 may protrude from the second side surface 42 . It may be located on the left side of the negative terminal 32 .
  • the negative terminal 32 protruding from the first side surface 41 protrudes from the second side surface 42 . It may be located to the right of terminal 32 .
  • the positional relationship between the positive terminal 31 and the negative terminal 32 protruding from the same side surface of the molding material 4 is not particularly limited.
  • the positive terminal 31 and the negative terminal 32 protruding from the same side surface of the molding material 4 may at least partially overlap in plan view.
  • the positive terminal 31 and the negative terminal 32 protruding from the same side surface of the molding material 4 may be spaced apart from each other in plan view. In this case, the heights of the positive electrode terminal 31 and the negative electrode terminal 32 from the insulating plate 2 may be the same or different.
  • the arrangement of the load terminal 71 and the plurality of control terminals 72 is not particularly limited.
  • the load terminal 71 protrudes from the third side surface 43 of the molding material 4 and the plurality of control terminals 72 protrude from the fourth side surface 44 (see FIG. 2).
  • the load terminal 71 and the plurality of control terminals 72 may protrude from the same side surface out of the third side surface 43 and the fourth side surface 44 .
  • Portions of the load terminal 71 and the plurality of control terminals 72 protruding from the third side surface 43 or the fourth side surface 44 may be in contact with the wiring layer 53 or may be separated from the wiring layer 53 .
  • the load terminal 71 and the plurality of control terminals 72 may protrude from the upper surface of the molding material 4 (the surface opposite to the surface in contact with the wiring layer 53).
  • the semiconductor module according to the embodiment includes an insulating plate (insulating plate 2 as an example), a circuit section (circuit section 5 as an example), and a power supply terminal (an as a power supply terminal 3) and a mold material (as an example, a mold material 4).
  • the circuit section includes a wiring layer (for example, wiring layer 53) arranged on an insulating plate and at least one switching element (for example, switching element 51) mounted on the wiring layer.
  • the power terminal is connected to the circuit section.
  • the molding material covers at least part of each of the insulating plate, the circuit section, and the power terminal.
  • the power supply terminal has a first side surface (for example, a first side surface 41) and a second side surface (for example, a second side surface 42) located on the opposite side of the first side surface (for example, a second side surface 42) of the molding material in plan view with respect to the insulating plate. protrude from Therefore, according to the semiconductor module according to the embodiment, the productivity of the power converter can be improved.
  • the power terminal may protrude outward from the insulating plate in plan view. Accordingly, in the manufacturing process of the power conversion device, when connecting the power supply terminals of the adjacent semiconductor modules, it is possible to prevent the insulating plate from interfering with the connection between the power supply terminals.
  • the power supply terminals may include a positive terminal (positive terminal 31 as an example) and a negative terminal (negative terminal 32 as an example).
  • each of the positive terminal and the negative terminal may protrude from the first side surface and the second side surface in plan view.
  • the end surface of the positive electrode terminal protruding from the first side surface and the end surface of the positive electrode terminal protruding from the second side surface are at least one At least a portion of the end surface of the negative electrode terminal protruding from the first side surface and the end surface of the negative electrode terminal protruding from the second side surface may overlap.
  • the portion of the positive electrode terminal that protrudes from the first side and the portion that protrudes from the second side of the positive electrode terminal that protrudes from the second side are arranged from one of the first side and the second side to the other. It may be arranged plane-symmetrically with respect to a virtual plane (for example, a virtual plane S) that is perpendicular to the facing direction and bisects the insulating plate. Further, the portion of the negative terminal protruding from the first side surface that protrudes from the first side surface and the portion of the negative electrode terminal that protrudes from the second side surface that protrudes from the second side surface are arranged symmetrically with respect to the virtual plane.
  • a virtual plane for example, a virtual plane S
  • the end surfaces of the positive terminals of two adjacent semiconductor modules can be brought into contact with each other entirely in the manufacturing process of the power converter.
  • the end surfaces of the negative terminals of two adjacent semiconductor modules can be brought into contact with each other over the entire surface. Therefore, two adjacent semiconductor modules can be more reliably connected to each other.
  • the positive electrode terminal protruding from the first side surface and the positive electrode terminal protruding from the second side surface are located on the opposite side of the first surface and the first surface along the direction from one of the first side surface and the second side surface to the other side. It may have two sides. Further, the negative terminal protruding from the first side surface and the negative terminal protruding from the second side surface are located on the opposite side of the third surface along the direction from one of the first side surface and the second side surface to the other side. You may have the 4th surface which carries out.
  • the positive terminal projecting from the first side surface and the positive terminal projecting from the second side surface may overlap, and the third surface of the negative terminal protruding from the first side surface and the fourth surface of the negative terminal protruding from the second side surface may overlap.
  • the semiconductor module according to the embodiment may include an input/output terminal (for example, the input/output terminal 7) connected to the circuit section.
  • the input/output terminal may protrude from a surface of the molding material other than the first side surface and the second side surface in plan view.
  • the semiconductor module according to the embodiment may have an alignment mark in a region exposed from the molding material on the surface of the insulating plate on which the wiring layer is arranged.
  • the switching element may be an insulated gate bipolar transistor.
  • the circuit section may also include two insulated gate bipolar transistors and two diodes connected in anti-parallel to each of the two insulated gate bipolar transistors.
  • the power conversion device may include a base plate (the base plate 111 as an example) and the plurality of semiconductor modules described above arranged on the base plate.
  • the plurality of semiconductor modules are arranged such that a first side surface of a molding material included in one semiconductor module faces a second side surface of a molding material included in another semiconductor module adjacent to the one semiconductor module.
  • a power terminal provided in a semiconductor module is connected to a power terminal provided in another semiconductor module.
  • a power terminal provided on one semiconductor module and a power terminal provided on another semiconductor module may be connected with their end surfaces in contact with each other. With such a configuration, the length of protrusion of the power supply terminal from the molding material can be minimized, and the power supply terminals of two adjacent semiconductor modules can be efficiently connected to each other.
  • the base plate may constitute at least part of a cooling section (for example, the cooling section 101) that cools the switching elements.
  • a cooling section for example, the cooling section 101
  • the base plate may constitute at least part of a cooling section (for example, the cooling section 101) that cools the switching elements.
  • the power conversion device may include a bonding material (eg, bonding material 102) provided between the insulating plate and the base plate to bond the semiconductor module and the base plate.
  • a bonding material eg, bonding material 102
  • the melting point of the bonding material may be lower than the glass transition temperature of the molding material.
  • Reference Signs List 1 Semiconductor module 2: Insulating plate 3: Power supply terminal 4: Mold material 5: Circuit part 7: Input/output terminal 8: Alignment mark 23: Conductive layer 31: Positive terminal 32: Negative terminal 41: First side surface 42: Second side Side 43 : Third side 44 : Fourth side 51 : Switching element 52 : Diode 53 : Wiring layer 54 : Bus bar 71 : Load terminal 72 : Control terminal 100 : Power converter 101 : Cooling part 102 : Joint material 111 : Base plate 112: Radiation fin 113: Alignment mark 200: DC power supply 300: Capacitor 400: Load 500: Drive circuit 550: Control circuit S: Virtual surface

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)

Abstract

La présente divulgation porte, selon un mode de réalisation, sur un module semi-conducteur qui comprend une plaque isolante, une unité de circuit, une borne d'alimentation électrique et un matériau de moule. L'unité de circuit comprend une couche de câblage agencée sur la plaque isolante et au moins un élément de commutation monté sur la couche de câblage. La borne d'alimentation électrique est raccordée à l'unité de circuit. Le matériau de moule recouvre au moins une partie de chacune de la plaque isolante, de l'unité de circuit et de la borne d'alimentation électrique. De plus, la borne d'alimentation électrique fait saillie à partir d'une première surface latérale du matériau de moule et à partir d'une seconde surface latérale positionnée sur le côté opposé par rapport à la première surface latérale dans une vue en plan par rapport à la plaque isolante.
PCT/JP2022/044377 2021-12-03 2022-12-01 Module semi-conducteur, dispositif de conversion de puissance et procédé permettant de produire un dispositif de conversion de puissance WO2023100980A1 (fr)

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JP2021197050 2021-12-03
JP2021-197050 2021-12-03

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004208411A (ja) * 2002-12-25 2004-07-22 Denso Corp ハーフブリッジ回路用半導体モジュール
JP2005340639A (ja) * 2004-05-28 2005-12-08 Toyota Industries Corp 半導体装置及び三相インバータ装置
JP2017199829A (ja) * 2016-04-28 2017-11-02 日産自動車株式会社 パワーモジュール構造
WO2018043535A1 (fr) * 2016-09-02 2018-03-08 ローム株式会社 Module de puissance, module de puissance avec circuit de commande, équipement industriel, automobile électrique et voiture hybride
JP2018117048A (ja) * 2017-01-18 2018-07-26 株式会社デンソー 半導体装置
WO2020085377A1 (fr) * 2018-10-24 2020-04-30 ローム株式会社 Dispositif à semi-conducteurs

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004208411A (ja) * 2002-12-25 2004-07-22 Denso Corp ハーフブリッジ回路用半導体モジュール
JP2005340639A (ja) * 2004-05-28 2005-12-08 Toyota Industries Corp 半導体装置及び三相インバータ装置
JP2017199829A (ja) * 2016-04-28 2017-11-02 日産自動車株式会社 パワーモジュール構造
WO2018043535A1 (fr) * 2016-09-02 2018-03-08 ローム株式会社 Module de puissance, module de puissance avec circuit de commande, équipement industriel, automobile électrique et voiture hybride
JP2018117048A (ja) * 2017-01-18 2018-07-26 株式会社デンソー 半導体装置
WO2020085377A1 (fr) * 2018-10-24 2020-04-30 ローム株式会社 Dispositif à semi-conducteurs

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