WO2023092568A1 - 固态发光器件及其制作方法和显示装置 - Google Patents

固态发光器件及其制作方法和显示装置 Download PDF

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WO2023092568A1
WO2023092568A1 PCT/CN2021/134061 CN2021134061W WO2023092568A1 WO 2023092568 A1 WO2023092568 A1 WO 2023092568A1 CN 2021134061 W CN2021134061 W CN 2021134061W WO 2023092568 A1 WO2023092568 A1 WO 2023092568A1
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light
electrode
emitting
solid
emitting device
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PCT/CN2021/134061
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English (en)
French (fr)
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谢相伟
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厦门市芯颖显示科技有限公司
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Priority to PCT/CN2021/134061 priority Critical patent/WO2023092568A1/zh
Publication of WO2023092568A1 publication Critical patent/WO2023092568A1/zh
Priority to US18/391,852 priority patent/US20240120327A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the invention relates to the technical field of light emission and display, in particular to a solid-state light-emitting device, a display device and a manufacturing method of the solid-state light-emitting device.
  • a Micro-LED chip generally refers to a semiconductor light-emitting diode chip whose length, width, and thickness are all less than 100 micrometers ( ⁇ m) and whose growth substrate has been removed.
  • Micro-LED chips usually have only one PN structure, that is, the common structure of Micro-LED chips is a single PN structure.
  • the Micro-LED chip is a current-mode device, which requires a relatively large driving current (or operating current) in the Micro-LED display device, which results in large power consumption due to heating of the circuit. Therefore, how to reduce the driving current of the Micro-LED to reduce power consumption under the premise of maintaining brightness is a technical problem to be solved at present.
  • embodiments of the present invention provide a solid-state light emitting device, a display device, and a manufacturing method of the solid-state light-emitting device.
  • a solid-state light-emitting device provided by an embodiment of the present invention includes, for example: a plurality of light-emitting elements, which are sequentially stacked in a vertical direction and connected in series to form a stacked light-emitting structure.
  • each of the light-emitting elements includes a first electrode, a second electrode, and a first semiconductor layer and an active layer sequentially stacked between the first electrode and the second electrode along the vertical direction. and the second semiconductor layer.
  • the first electrode of one of the light-emitting elements in every two adjacent light-emitting elements is bonded to the second electrode of the other light-emitting element to form a electrical connection.
  • the first electrode of the light-emitting element located at the bottom in the stacked light-emitting structure is a planar metal electrode, and the stacked light-emitting structure
  • the second electrodes of the uppermost light-emitting element are a plurality of point electrodes or a plurality of strip electrodes.
  • the first electrode of the light-emitting element located at the bottom in the stacked light-emitting structure is a planar metal electrode, and the stacked light-emitting structure
  • the second electrode of the uppermost light-emitting element is a planar transparent electrode.
  • the bonded first electrodes and the second electrodes have the same shape, and each of them is a plurality of point electrodes or a plurality of strip electrodes.
  • the bonded first electrodes and the second electrodes are respectively a group of strip-shaped electrodes perpendicular to each other to form a vertical grid-like connection.
  • transparent material is filled in the gap formed between every two adjacent light-emitting elements due to the thickness of the first electrode and the second electrode.
  • the plurality of light emitting elements are a plurality of light emitting elements of the same color.
  • the plurality of light emitting elements are a plurality of light emitting elements of different colors.
  • each of the light-emitting elements is a micro-LED chip
  • the active layer is a multi-quantum well layer
  • the length, width and height of the micro-LED chip are all less than 100 microns.
  • a display device provided by an embodiment of the present invention includes, for example: a driving substrate; and a plurality of display pixels disposed on the driving substrate and electrically connected to the driving substrate.
  • each of the display pixels includes a plurality of sub-pixels of different colors, and the light-emitting diode used in each of the sub-pixels is the solid-state light-emitting device described in any one of the foregoing embodiments.
  • the driving substrate is a passive matrix driving substrate or an active matrix driving substrate.
  • a method for manufacturing a solid-state light-emitting device includes, for example:
  • each of the first light-emitting elements includes a first electrode, a second electrode, and between the first electrode and the second electrode
  • the first semiconductor layer, the active layer and the second semiconductor layer are stacked in sequence, the first electrode is located on the side of the first semiconductor layer away from the active layer, and the second electrode is located on the first semiconductor layer A side of the second semiconductor layer away from the active layer;
  • each of the light-emitting structures includes a third electrode, a third semiconductor layer, a second active layer, and a fourth semiconductor layer that are sequentially stacked, and the The growth substrate is located on a side of the fourth semiconductor layer away from the second active layer;
  • each of the stacked structures includes one of the first light-emitting elements and one of the light-emitting structures;
  • a fourth electrode is formed on the side of the exposed fourth semiconductor layer of the plurality of spaced apart stack structures away from the second active layer, so as to obtain a plurality of spaced apart stacked structures on the transition carrier plate.
  • the face-to-face bonding adopts a metal bonding process.
  • the shape of the third electrode is the same as that of the second electrode, and each is a plurality of point electrodes or a plurality of strip electrodes.
  • the third electrode and the second electrode are respectively a group of strip electrodes perpendicular to each other to form a vertical grid-like connection.
  • the first light-emitting element and the second light-emitting element are light-emitting elements of the same color.
  • the first light-emitting element and the second light-emitting element are light-emitting elements of different colors.
  • the embodiments of the present invention provide a solid-state light emitting device with a stacked series structure, which can reduce the driving current while maintaining the luminous brightness, thereby reducing power consumption. Furthermore, when it is a Micro-LED and applied to a passive matrix display device (or called a passive drive display device) or an active matrix display device (or called an active drive display device), due to its pre-formed stacked series structure , so it will not increase the difficulty of mass transfer, but it can achieve the purpose of reducing power consumption; in addition, since each light-emitting element is stacked in sequence in the vertical direction, it will not increase the occupied space on the driving substrate, that is, it will not Will reduce the resolution PPI (pixels per inch).
  • PPI pixels per inch
  • FIG. 1A is a schematic structural diagram of a solid-state light emitting device according to the first embodiment of the present invention.
  • FIG. 1B is a schematic circuit diagram of the solid-state light emitting device shown in FIG. 1A .
  • Fig. 2A to Fig. 2F are schematic diagrams showing the shape and connection relationship of the bonded first electrode and second electrode in the first embodiment of the present invention.
  • FIG. 3A is a schematic diagram of an application of the solid-state light emitting device shown in FIG. 1A in a passive matrix display device.
  • FIG. 3B is a schematic diagram of an equivalent circuit of a single sub-pixel in FIG. 3A .
  • FIG. 4A is a schematic diagram of an application of the solid-state light emitting device shown in FIG. 1A in an active matrix display device.
  • FIG. 4B is a schematic diagram of an equivalent circuit of a single sub-pixel shown in FIG. 4A .
  • FIG. 5A to FIG. 5E are structural schematic diagrams of multiple steps in a manufacturing method of the solid-state light emitting device shown in FIG. 1A .
  • Fig. 6 is a schematic structural diagram of another solid-state light emitting device according to the first embodiment of the present invention.
  • Fig. 7 is a schematic structural diagram of another solid-state light emitting device according to the first embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of a display device according to a second embodiment of the present invention.
  • a solid-state light-emitting device 10 provided by the first embodiment of the present invention includes: a plurality of light-emitting elements such as 11 , 12 , 1M-1 and 1M.
  • the plurality of light emitting elements 11 , 12 , 1M- 1 and 1M are stacked in sequence along the vertical direction and connected in series to form a stacked light emitting structure.
  • FIG. 1B is a circuit diagram of the solid state light emitting device 10 , which shows that the plurality of light emitting elements such as 11 , 12 , 1M-1 and 1M are sequentially connected in series.
  • the number of light-emitting elements in the solid-state light-emitting device 10 is not limited to the number shown in FIG. 1A , it can be other numbers, such as two, three or more, that is, M ⁇ 2 .
  • the light-emitting element 11 includes a first electrode 11p such as a p-electrode, a second electrode 11n such as an n-electrode, and sequentially stacked between the first electrode 11p and the second electrode 11n along the vertical direction
  • the first semiconductor layer 111 is, for example, an n-type semiconductor
  • the active layer 113 is, for example, a multi-quantum well layer
  • the second semiconductor layer 115 is, for example, a p-type semiconductor layer.
  • the light-emitting element 12 includes a first electrode 12p such as a p-electrode, a second electrode 12n such as an n-electrode, and sequentially stacked along the vertical direction between the first electrode 12p and the second electrode 12n
  • the provided first semiconductor layer 121 is, for example, an n-type semiconductor
  • the active layer 123 is, for example, a multi-quantum well layer
  • the second semiconductor layer 125 is, for example, a p-type semiconductor layer.
  • the light emitting element 1M-1 includes a first electrode 1M-1p such as a p-electrode, a second electrode 1M-1n such as an n-electrode, and an edge between the first electrode 1M-1p and the second electrode 1M-1n.
  • the first semiconductor layer 1M-11 such as an n-type semiconductor
  • the active layer 1M-13 such as a multi-quantum well layer
  • the second semiconductor layer 1M-15 such as a p-type semiconductor layer are stacked in sequence in the vertical direction.
  • the light-emitting element 1M includes a first electrode 1Mp such as a p-electrode, a second electrode 1Mn such as an n-electrode, and a first electrode 1Mp and the second electrode 1Mn stacked in sequence along the vertical direction.
  • a semiconductor layer 1M1 such as an n-type semiconductor, an active layer 1M3 such as a multi-quantum well layer, and a second semiconductor layer 1M5 such as a p-type semiconductor layer.
  • the light emitting element 11 and the light emitting element 12 are two adjacent light emitting elements, and the light emitting element 1M-1 and the light emitting element 1M are two adjacent light emitting elements.
  • the first electrode 12p of the light emitting element 12 is bonded to the second electrode 11n of the light emitting element 11 to form an electrical connection;
  • the The first electrode 1Mp of the light emitting element 1M is bonded to the second electrode 1M-1n of the light emitting element 1M-1 to form an electrical connection.
  • the first electrode of one light-emitting element in every two adjacent light-emitting elements is bonded to the second electrode of the other light-emitting element to form an electrical connection.
  • the bonding is, for example, a metal bonding process.
  • the first electrode and the second electrode are made of pure tin (Sn) layer, gold tin (Sn/Au) layer, titanium copper (Ti /Cu) layer, or aluminum-nickel-gold (Al/Ni/Au) layer forms a bonding connection under heat and pressure.
  • the electrode connection between every two adjacent light-emitting elements can be bonded in the four corners or the limited area of the edge of the light-emitting element.
  • electrode, and the second electrode bonded to the first electrode has the same shape, that is, a plurality of point electrodes or a plurality of strip electrodes.
  • the electrode connection between every two adjacent light-emitting elements can also be connected in a vertical grid.
  • the first electrode and the second electrode are strip electrodes perpendicular to each other.
  • the first electrode 11p of the light-emitting element 11 located at the bottom in the stacked light-emitting structure is a planar metal electrode, and the first electrode 11p located in the stacked light-emitting structure is
  • the second electrode 1Mn of the uppermost light emitting element 1M is a plurality of dot electrodes or a plurality of strip electrodes.
  • each light-emitting element 11, 12, 1M-1, and 1M in the stacked light-emitting structure of the solid-state light-emitting device 10 can be light-emitting elements of the same color, for example, all are red light-emitting elements, uniform They are all blue light-emitting elements, all green light-emitting elements, or other light-emitting elements of the same color, so as to form a single-color series high-voltage light-emitting device as a whole.
  • each light emitting element 11, 12, 1M-1, and 1M can also be light emitting elements of different colors, for example, it can be a mixture of red light emitting elements, green light emitting elements and blue light emitting elements, so that It can generate multi-spectral light including three colors of red, green and blue, that is, a multi-color series high-voltage light-emitting device is formed as a whole.
  • each light-emitting element 11, 12, 1M-1 and 1M is a miniature light-emitting diode chip
  • each active layer 113, 123, 1M-13 and 1M3 is a multi-quantum well layer
  • the length, width and height of the miniature LED chips are all less than 100 microns.
  • the solid-state light emitting device 10 of this embodiment can be applied to a passive matrix (passive matrix, PM) display device.
  • PM passive matrix
  • FIG. 3A it shows that nine solid-state light-emitting devices 10 are arranged in a 3 ⁇ 3 array, and are electrically connected to three anode lines (anode line) AL and three cathode lines (cathode line) CL, and receive column drive. Circuit and row drive circuit control to achieve image display. It is worth mentioning that in FIG. 3A, nine solid-state light-emitting devices 10 respectively form nine sub-pixels to obtain three red (R) sub-pixels, three green (G) sub-pixels and three blue (B) sub-pixels.
  • R red
  • G green
  • B blue
  • a single sub-pixel of a passive matrix display device can be equivalent to a series connection of a solid-state light-emitting device and a line impedance.
  • the solid-state light-emitting device 10 of this embodiment is M light-emitting elements connected in series To emit light, if it is necessary to obtain the same luminous brightness, the driving current through the solid-state light-emitting device 10 can be greatly reduced (theoretically, it is 1/M of the solid-state light-emitting device with a single PN structure).
  • the on-voltage Vf also increases correspondingly to the sum of the Vf of multiple light-emitting elements. Although the overall driving voltage rises, this part of the increased voltage is applied to each light-emitting element 11, 12, 1M-1, and 1M of the solid-state light-emitting device 10. , improving the utilization of effective power consumption.
  • the solid-state light emitting device 10 of this embodiment can also be applied to an active matrix (active matrix, AM) display device.
  • FIG. 4A it shows a circuit structure of a single sub-pixel, specifically including a selection transistor T1 , a driving transistor T2 , a storage capacitor Cs and a solid-state light emitting device 10 electrically connected to each other.
  • the selection transistor T1 When the scanning signal Vselect on the scanning line is input, the selection transistor T1 is turned on, the data signal Vdata on the data line is transmitted to the gate of the driving transistor T2, and simultaneously charges the storage capacitor Cs; then the driving transistor T2 is turned on is turned on, so that a driving current flows between the power supply voltage VDD and the reference voltage VSS, and the driving current flows through the solid state light emitting device 10, and the solid state light emitting device 10 emits light under the action of the driving current. Due to the holding effect of the storage capacitor Cs, the gate voltage of the driving transistor T2 remains unchanged throughout the display period, so that the conduction state of the drive transistor T2 remains unchanged throughout the display period.
  • An internally stable driving current can flow from VDD through the solid-state light-emitting device 10 to VSS, thereby ensuring that the solid-state light-emitting device 10 can normally emit light during the entire display period.
  • a single sub-pixel of an active matrix display device can be equivalent to a solid-state light-emitting device connected in series with line impedance and transistor impedance.
  • the solid-state light-emitting device 10 of this embodiment is due to M light-emitting elements are connected in series to emit light.
  • the driving current through the solid-state light-emitting device 10 can be greatly reduced (theoretically, it is 1/M of the solid-state light-emitting device with a single PN structure).
  • the The turn-on voltage Vf of the solid-state light-emitting device 10 also increases correspondingly to the sum of the Vf of multiple light-emitting elements. Although the overall driving voltage rises, this part of the increased voltage is applied to each light-emitting element 11, 12, On 1M-1 and 1M, the utilization rate of effective power consumption has been improved.
  • the solid-state light-emitting device 10 will be briefly described below with reference to FIGS. a method of making. specifically:
  • Step (1) As shown in FIG. 5A , provide a plurality of light-emitting elements 11 spaced apart from each other on the transition carrier 510, wherein each of the light-emitting elements 11 includes an electrode 11p, an electrode 11n, and an electrode 11p and an electrode 11n.
  • the semiconductor layer 111, the active layer 113 and the semiconductor layer 115 are sequentially stacked between the electrodes 11n, the electrode 11p is located on the side of the semiconductor layer 111 away from the active layer 113, and the electrode 11n is located A side of the semiconductor layer 115 away from the active layer 113 .
  • the epitaxial wafer is a blue LED epitaxial wafer or a green LED epitaxial wafer, then laser lift-off (laser lift-off, LLO) technology can be used to remove its growth substrate such as a sapphire substrate; if the epitaxial wafer is a red LED
  • the growth substrate such as the GaAs substrate can be removed by chemical etching; and, after the growth substrate is removed, the electrode 11n can be fabricated to obtain the structure shown in FIG. 5A .
  • Step (2) As shown in FIG. 5B , provide a plurality of spaced light emitting structures 12A formed on the growth substrate 530, wherein each of the light emitting structures 12A includes an electrode 12p, a semiconductor layer 121, an organic source layer 123 and semiconductor layer 125 , and the growth substrate 530 is located on a side of the semiconductor layer 125 away from the active layer 123 . More specifically, an electrode 12p having a structure corresponding to the electrode 11n in FIG. 5A (refer to FIG. 2A-FIG.
  • 2F is fabricated on the epitaxial wafer where the plurality of light-emitting structures 12A are located, and etched to form the second layer of Micro-LED grains , and the grain size is as large as the grain size in the first layer of Micro-LED grains, so as to obtain the structure as shown in FIG. 5B .
  • Step (3) As shown in FIG. 5C , the electrodes 12p of the plurality of spaced apart light emitting structures 12A are respectively face-to-face bonded to the electrodes 11n of the plurality of spaced apart light emitting elements 11 to obtain A plurality of stacked structures spaced apart between the transition carrier 510 and the growth substrate 530 , wherein each of the stacked structures includes one light emitting element 11 and one light emitting structure 12A.
  • the face-to-face bonding is, for example, a metal bonding process, but the embodiments of the present invention are not limited thereto.
  • Step (4) removing the growth substrate 530 to expose the plurality of stacked structures spaced apart from each other to obtain the structure shown in FIG. 5D .
  • the light emitting structure 10A includes one light emitting element 11 and another light emitting element 12, and the light emitting element 12 includes one light emitting structure 12A and the electrode 12n.
  • step (2) to step (5) can be repeated one or more times to obtain required solid state light emitting devices.
  • the second electrode 1Mn of the uppermost light-emitting element 1M in the stacked light-emitting structure of the solid-state light-emitting device 10 in this embodiment is not limited to a plurality of dot-shaped electrodes or electrodes as shown in FIG. 1A .
  • the strip electrode may also be a planar transparent electrode 1Mn' as shown in FIG. 6 .
  • FIG. 7 between each adjacent two light-emitting elements among the plurality of light-emitting elements 11, 12, 1M-1, and 1M is formed by the thickness of the first electrode and the second electrode.
  • the voids are filled with a transparent material 71 to improve the light extraction efficiency of the entire solid-state light-emitting device 10;
  • the transparent material 71 here can be an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, etc., or an organic material such as poly Methyl methacrylate (PMMA) or polycarbonate (PC) is preferably a transparent material with a refractive index of about 1.5, for example, the refractive index ranges from 1.4 to 1.6.
  • FIG. 8 is a schematic structural diagram of a display device according to a second embodiment of the present invention.
  • the display device 80 includes: a driving substrate 81, and a plurality of display pixels arranged on the driving substrate 81 and electrically connected to the driving substrate 81; only one display pixel is shown in FIG. pixels as an example.
  • a single display pixel includes a plurality of sub-pixels of different colors such as red sub-pixel R, green sub-pixel G, and blue sub-pixel B, and the light-emitting diode used in each of the sub-pixels is the aforementioned first embodiment Any solid-state light emitting device 10 described above.
  • the driving substrate 81 may be a passive matrix driving substrate or an active matrix driving substrate.
  • each of the electrode structures includes electrodes 811 and 813 arranged in pairs; each sub-pixel R,
  • the solid-state light emitting devices in G and B are disposed on the driving substrate 81 and are electrically connected to the electrodes 811 and 813 in the corresponding electrode structure.
  • the single sub-pixel of the display device 80 of this embodiment uses a single-color series high-voltage light-emitting device such as a single-color series high-voltage Micro-LED chip, compared with the prior art that uses a single PN structure Micro-LED chip as a sub-pixel In the case of a pixel, the driving current can be reduced while maintaining a certain brightness, thereby reducing the power consumption of the display device.
  • the solid-state light emitting device 10 is pre-formed in a stacked series structure, the difficulty of mass transfer will not be increased.
  • the various light emitting elements in the solid state light emitting device 10 are vertically stacked one after another, it will not increase the occupied space on the driving substrate 81 , that is, it will not reduce the resolution PPI.

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Abstract

本发明实施例公开一种固态发光器件及其制作方法以及一种采用所述固态发光器件的显示装置。所述固态发光器件例如包括：多个发光元件，沿竖直方向依次堆叠且串联连接以形成堆叠发光结构。其中，每一个所述发光元件包括第一电极、第二电极、和在所述第一电极与所述第二电极之间沿所述竖直方向依次层叠设置的第一半导体层、有源层和第二半导体层。再者，在所述竖直方向上，每相邻两个所述发光元件中的一个所述发光元件的所述第一电极与另一个所述发光元件的所述第二电极键合以形成电连接。本发明实施例的固态发光器件相对于现有的单PN结构之固态发光器件，可以降低驱动电流，进而降低功耗。

Description

固态发光器件及其制作方法和显示装置 技术领域
本发明涉及发光和显示技术领域，尤其涉及一种固态发光器件、一种显示装置以及一种固态发光器件的制作方法。
背景技术
微型发光二极管(Micro-LED)芯片通常是指其长度(length)、宽度(width)、厚度(thickness)均小于100微米(μm)、且已经去除生长衬底的半导体发光二极管芯片。Micro-LED芯片通常只有一个PN结构，也即Micro-LED芯片常用结构为单PN结构。Micro-LED芯片是电流型器件，在Micro-LED显示装置中需要较大的驱动电流(或称工作电流)，其导致线路发热功耗较大。因此，如何在保持亮度的前提下降低Micro-LED的驱动电流以降低功耗是目前有待解决的技术问题。
发明内容
因此，为克服现有技术存在的至少部分缺陷与不足，本发明实施例提供一种固态发光器件、一种显示装置以及一种固态发光器件的制作方法。
具体地，一方面，本发明实施例提出的一种固态发光器件，例如包括：多个发光元件，沿竖直方向依次堆叠且串联连接以形成堆叠发光结构。其中，每一个所述发光元件包括第一电极、第二电极、和在所述第一电极与所述第二电极之间沿所述竖直方向依次层叠设置的第一半导体层、有源层和第二半导体层。再者，在所述竖直方向上，每相邻两个所述发光元件中的一个所述发光元件的所述第一电极与另一个所述发光元件的所述第二电极键合以形成电连接。
在本发明的一个实施例中，在所述竖直方向上，所述堆叠发光结构中位于最下方的所述发光元件的所述第一电极为面状金属电极、且所述堆叠发光结构中位于最上方的所述发光元件的所述第二电极为多个点状电极或多个条状电极。
在本发明的一个实施例中，在所述竖直方向上，所述堆叠发光结构中位于最下方的所述发光元件的所述第一电极为面状金属电极、且所述堆叠发光结构中位于最上方的所述发光元件的所述第二电极为面状透明电极。
在本发明的一个实施例中，键合的所述第一电极与所述第二电极的形状相同、且每一者为多个点状电极或多个条状电极。
在本发明的一个实施例中，键合的所述第一电极与所述第二电极分别为相互垂直的条状电极组以形成垂直网格状连接。
在本发明的一个实施例中，每相邻两个所述发光元件之间因所述第一电极与所述第二电极的厚度所形成的空隙内填充有透明材料。
在本发明的一个实施例中，所述多个发光元件为多个相同颜色发光元件。
在本发明的一个实施例中，所述多个发光元件为多个不同颜色发光元件。
在本发明的一个实施例中，每一个所述发光元件为微型发光二极管芯片，所述有源层为多量子阱层，且所述微型发光二极管芯片的长度、宽度和高度均小于100微米。
另一方面，本发明实施例提供的一种显示装置，例如包括：驱动基板；以及多个显示像素，设置在所述驱动基板上、且与所述驱动基板形成电连接。其中，每一个所述显示像素包括多个不同颜色的子像素，且每一个所述子像素采用的发光二极管为前述任一实施例所述的固态发光器件。
在本发明的一个实施例中，所述驱动基板为被动矩阵式驱动基板或主动矩阵 式驱动基板。
又一方面，本发明实施例提供的一种固态发光器件的制作方法，例如包括：
提供位于过渡载板上的多个相互间隔的第一发光元件，其中每一个所述第一发光元件包括第一电极、第二电极、和在所述第一电极与所述第二电极之间依次层叠设置的第一半导体层、有源层和第二半导体层，所述第一电极位于所述第一半导体层远离所述有源层的一侧，且所述第二电极位于所述第二半导体层远离所述有源层的一侧；
提供形成在生长衬底上的多个相互间隔的发光结构，其中每一个所述发光结构包括依次层叠设置的第三电极、第三半导体层、第二有源层和第四半导体层，且所述生长衬底位于所述第四半导体层远离所述第二有源层的一侧；
将所述多个相互间隔的发光结构的所述第三电极分别与所述多个相互间隔的第一发光元件的所述第二电极面对面键合，以得到位于所述过渡载板与所述生长衬底之间的多个相互间隔的堆叠结构，其中每一个所述堆叠结构包括一个所述第一发光元件和一个所述发光结构；
去除所述生长衬底，以暴露出所述多个相互间隔的堆叠结构；以及
在暴露的所述多个相互间隔的堆叠结构的所述第四半导体层远离所述第二有源层的一侧制作第四电极，以得到位于所述过渡载板上的多个相互间隔的堆叠发光结构从而形成位于所述过渡载板上的多个相互间隔的固态发光器件，其中每一个所述堆叠发光结构包括一个所述第一发光元件和一个第二发光元件，且所述第二发光元件包括一个所述发光结构和所述第四电极。
在本发明的一个实施例中，所述面对面键合为采用金属键合工艺。
在本发明的一个实施例中，所述第三电极与所述第二电极的形状相同、且每 一者为多个点状电极或多个条状电极。
在本发明的一个实施例中，所述第三电极与所述第二电极分别为相互垂直的条状电极组以形成垂直网格状连接。
在本发明的一个实施例中，所述第一发光元件和所述第二发光元件为相同颜色发光元件。
在本发明的一个实施例中，所述第一发光元件和所述第二发光元件为不同颜色发光元件。
由上可知，本发明实施例通过提供一种具有堆叠串联结构的固态发光器件，其可以在保持发光亮度的前提下降低驱动电流，从而可以降低功耗。再者，当其为Micro-LED且应用于被动矩阵式显示装置(或称无源驱动显示装置)或主动矩阵式显示装置(或称有源驱动显示装置)时，由于其预先形成堆叠串联结构，因而不会增加巨量转移难度，但可以达成降低功耗之目的；此外，由于各个发光元件是在竖直方向上依次堆叠设置，其不会增加在驱动基板上的占用空间，也即不会降低分辨率PPI(pixels per inch)。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1A为本发明第一实施例的一种固态发光器件的结构示意图。
图1B为图1A所示固态发光器件的一种电路示意图。
图2A至图2F为本发明第一实施例中键合的第一电极与第二电极之形状 和连接关系示意图。
图3A为图1A所述固态发光器件在被动矩阵式显示装置的一种应用示意图。
图3B为图3A中单个子像素的等效电路示意图。
图4A为图1A所述固态发光器件在主动矩阵式显示装置的一种应用示意图。
图4B为图4A所示单个子像素的等效电路示意图。
图5A至图5E为图1A所示固态发光器件的一种制作方法中多个步骤的相关结构示意图。
图6为本发明第一实施例的另一种固态发光器件的结构示意图。
图7为本发明第一实施例的又一种固态发光器件的结构示意图。
图8为本发明第二实施例的一种显示装置的结构示意图。
具体实施方式
为了使本发明实施例的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施例中的技术方案进行清楚、完整的描述，显然，所描述的实施例仅仅是本发明的部分实施例，而不是全部实施例。基于本发明描述的实施例，本领域普通技术人员在没有付出创造性劳动的前提下所获得的所有其他实施例，都属于本发明的保护范围。
需要说明，本发明实施例中所有方向性指示(诸如上、下、左、右、前、后、顶、底)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。此外，在发明实施例及权利要求书中所涉及的术语“垂直”是指两个元件之间的 夹角为90°或者存在-5°～+5°的偏差，所涉及的术语“平行”是指两个元件之间的夹角为0°或者存在-5°～+5°的偏差。
在本发明实施例中如涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。
【第一实施例】
参见图1A及图1B，本发明第一实施例提供的一种固态发光器件10，包括：多个发光元件例如11、12、1M-1及1M。所述多个发光元件11、12、1M-1及1M沿竖直方向依次堆叠且串联连接以形成堆叠发光结构。图1B为所述固态发光器件10的电路图，其示出所述多个发光元件例如11、12、1M-1及1M依次串联连接。此处需要说明的是，所述固态发光器件10中的发光元件数量并不限于图1A所示个数，其可以是其他数量，例如两个、三个或更多个，也即M≥2。
其中，所述发光元件11包括第一电极11p例如p电极、第二电极11n例如n电极、和在所述第一电极11p与所述第二电极11n之间沿所述竖直方向依次层叠设置的第一半导体层111例如n型半导体、有源层113例如多量子阱层和第二半导体层115例如p型半导体层。
类似地，所述发光元件12包括第一电极12p例如p电极、第二电极12n例如n电极、和在所述第一电极12p与所述第二电极12n之间沿所述竖直方向依次层叠设置的第一半导体层121例如n型半导体、有源层123例如多量子阱层和第二半导体层125例如p型半导体层。
所述发光元件1M-1包括第一电极1M-1p例如p电极、第二电极1M-1n例如n电极、和在所述第一电极1M-1p与所述第二电极1M-1n之间沿所述竖直方向依 次层叠设置的第一半导体层1M-11例如n型半导体、有源层1M-13例如多量子阱层和第二半导体层1M-15例如p型半导体层。
所述发光元件1M包括第一电极1Mp例如p电极、第二电极1Mn例如n电极、和在所述第一电极1Mp与所述第二电极1Mn之间沿所述竖直方向依次层叠设置的第一半导体层1M1例如n型半导体、有源层1M3例如多量子阱层和第二半导体层1M5例如p型半导体层。
再者，在所述竖直方向上，所述发光元件11与所述发光元件12为相邻两个发光元件，所述发光元件1M-1与所述发光元件1M为相邻两个发光元件。对于发光元件11及12，所述发光元件12的所述第一电极12p与所述发光元件11的所述第二电极11n键合以形成电连接；对于发光元件1M-1及1M，所述发光元件1M的所述第一电极1Mp与所述发光元件1M-1的所述第二电极1M-1n键合以形成电连接。简而言之，在所述堆叠发光结构中，每相邻两个发光元件中的一个发光元件的第一电极与另一个发光元件的第二电极键合以形成电连接。此处的键合例如是采用金属键合工艺，例如来说，所述第一电极与所述第二电极是通过纯锡(Sn)层、金锡(Sn/Au)层、钛铜(Ti/Cu)层、或铝镍金(Al/Ni/Au)层在加热受压条件下形成键合连接。当然，每相邻两个发光元件的电极之间也可以采用其它键合连接方式，只要保证发光单元中间有透光区域、不会完全阻挡底部发光元件的出光均可。
承上述，每相邻两个发光元件之间电极连接可以在发光元件四角或边缘有限区域键合连接，例如图2A至图2E所示，各个第一电极为多个点状电极或多个条状电极，且与所述第一电极键合的第二电极具有相同形状，也即也是多个点状电极或多个条状电极。此外，每相邻两个发光元件之间电极连接也可以采用垂直网 格状连接，例如图2F所示，第一电极与第二电极分别为相互垂直的条状电极。
再参考图1A可知，在所述竖直方向上，所述堆叠发光结构中位于最下方的所述发光元件11的所述第一电极11p为面状金属电极、且所述堆叠发光结构中位于最上方的所述发光元件1M的所述第二电极1Mn为多个点状电极或多个条状电极。
再者，值得说明的是，所述固态发光器件10的所述堆叠发光结构中的各个发光元件11、12、1M-1及1M可以是相同颜色发光元件，例如均为红光发光元件、均为蓝光发光元件、均为绿光发光元件、或其他相同颜色发光元件，从而整体形成一种单色串联高压发光器件。当然，在本发明其他实施方式中，各个发光元件11、12、1M-1及1M也可以是不同颜色发光元件，例如可以是红色发光元件、绿色发光元件和蓝色发光元件三种混合，从而可以产生包含红、绿、蓝三种颜色的多光谱出光，也即整体形成一种多色串联高压发光器件。
另外，在本发明的一个优选实施例中，各个发光元件11、12、1M-1及1M均为微型发光二极管芯片，各个有源层113、123、1M-13及1M3均为多量子阱层，且所述微型发光二极管芯片的长度、宽度和高度均小于100微米。
参见图3A及图3B，本实施例的固态发光器件10可以应用于被动矩阵(passive matrix,PM)式显示装置。具体地，在图3A中，其示意出九个固态发光器件10以3×3阵列方式排列、并电连接三条阳极线(anode line)AL和三条阴极线(cathode line)CL，以及接受列驱动电路和行驱动电路的控制来实现图像显示。值得一提的是，在图3A中，九个固态发光器件10分别形成九个子像素，以得到三个红色(R)子像素、三个绿色(G)子像素和三个蓝色(B)子像素。再者，如图3B所示，由于线路阻抗，被动矩阵式显示装置的单个子像素可以等效为固态发光器件与线路阻抗 的串联，本实施例的固态发光器件10由于是M个发光元件串联发光，如需获得相同的发光亮度，通过固态发光器件10的驱动电流可以大幅度下降(理论上是单PN结构之固态发光器件的1/M)，另外本实施例的固态发光器件10的导通电压Vf也相应地增加为多个发光元件的Vf相加，虽然整体驱动电压上升，但这部分上升的电压都施加于固态发光器件10的各个发光元件11、12、1M-1及1M上，提升了有效功耗的利用率。
参见图4A及图4B，本实施例的固态发光器件10也可以应用于主动矩阵(active matrix,AM)式显示装置。具体地，在图4A中，其示意出单个子像素的电路结构，具体包括相互电性连接的选择晶体管T1、驱动晶体管T2、存储电容Cs和固态发光器件10。当扫描线上的扫描信号Vselect输入时，所述选择晶体管T1导通，数据线上的数据信号Vdata传输到驱动晶体管T2的栅极，并同时给存储电容Cs充电；而后所述驱动晶体管T2导通，使得电源电压VDD和参考电压VSS之间有驱动电流通过，该驱动电流流经所述固态发光器件10，所述固态发光器件10在驱动电流的作用下发光。由于存储电容Cs的保持作用，所述驱动晶体管T2的栅极电压在整个显示时间段内保持不变，使得所述驱动晶体管T2在整个显示时间段内导通状态不变，在整个显示时间段内稳定的驱动电流均可从VDD流经所述固态发光器件10到VSS，进而保证所述固态发光器件10在整个显示时间段内均能正常发光。再者，如图4B所示，由于线路阻抗及晶体管阻抗，主动矩阵式显示装置的单个子像素可以等效为固态发光器件与线路阻抗及晶体管阻抗的串联，本实施例的固态发光器件10由于是M个发光元件串联发光，如需获得相同的发光亮度，通过固态发光器件10的驱动电流可以大幅度下降(理论上是单PN结构之固态发光器件的1/M)，另外本实施例的固态发光器件10的导通电压Vf 也相应地增加为多个发光元件的Vf相加，虽然整体驱动电压上升，但这部分上升的电压都施加于固态发光器件10的各个发光元件11、12、1M-1及1M上，提升了有效功耗的利用率。
为便于更清楚地理解本实施例的固态发光器件10，下面将以各个发光元件11、12、1M-1及1M为Micro-LED芯片作为举例结合图5A-5E简要说明所述固态发光器件10的一种制作方法。具体地：
步骤(1)：如图5A所示，提供位于过渡载板510上的多个相互间隔的发光元件11，其中每一个所述发光元件11包括电极11p、电极11n、和在所述电极11p与所述电极11n之间依次层叠设置的半导体层111、有源层113和半导体层115，所述电极11p位于所述半导体层111远离所述有源层113的一侧，且所述电极11n位于所述半导体层115远离所述有源层113的一侧。更具体地，所述多个发光元件11所在的外延片制作电极11p后，蚀刻形成第一层Micro-LED晶粒，并临时键合到所述过渡载板(例如蓝宝石基板)510上；然后，若所述外延片为蓝色LED外延片或绿色LED外延片，则可以采用激光剥离(laser lift-off，LLO)技术去除其生长衬底例如蓝宝石衬底，若所述外延片为红色LED外延片，则可以采用化学腐蚀方式去除其生长衬底例如GaAs衬底；以及，在去除生长衬底后，制作电极11n，进而得到如图5A所示的结构。
步骤(2)：如图5B所示，提供形成在生长衬底530上的多个相互间隔的发光结构12A，其中每一个所述发光结构12A包括依次层叠设置的电极12p、半导体层121、有源层123和半导体层125，且所述生长衬底530位于所述半导体层125远离所述有源层123的一侧。更具体地，在所述多个发光结构12A所在的外延片上制作具有与图5A中电极11n相对应结构(参考图2A-图2F)的电极12p，并蚀刻 形成第二层Micro-LED晶粒，且晶粒尺寸与第一层Micro-LED晶粒中的晶粒尺寸等大，以得到如图5B所示的结构。
步骤(3)：如图5C所示，将所述多个相互间隔的发光结构12A的所述电极12p分别与所述多个相互间隔的发光元件11的所述电极11n面对面键合，以得到位于所述过渡载板510与所述生长衬底530之间的多个相互间隔的堆叠结构，其中每一个所述堆叠结构包括一个所述发光元件11和一个所述发光结构12A。此处的面对面键合例如是采用金属键合工艺，但本发明实施例并不以此为限。
步骤(4)：去除所述生长衬底530，以暴露出所述多个相互间隔的堆叠结构，得到如图5D所示的结构。
步骤(5)：在暴露的所述多个相互间隔的堆叠结构的所述半导体层125远离所述有源层123的一侧制作电极12n，以得到如图5E所示的位于所述过渡载板510上的多个相互间隔的堆叠发光结构10A，进而可以形成位于所述过渡载板510上的多个相互间隔的固态发光器件10(对应M＝2的情形)，其中每一个所述堆叠发光结构10A包括一个所述发光元件11和另一个发光元件12，且所述发光元件12包括一个所述发光结构12A和所述电极12n。值得一提的是，若所述固态发光器件10为三层及以上堆叠发光结构(对应M≥3的情形)，则可以重复一次或多次步骤(2)至步骤(5)，以制得所需的固态发光器件。
另外，值得说明的是，本实施例的固态发光器件10的所述堆叠发光结构中位于最上方的发光元件1M的所述第二电极1Mn并不限于图1A所示为多个点状电极或条状电极，也可以如图6所示为面状透明电极1Mn’。再者，如图7所示，所述多个发光元件11、12、1M-1及1M中每相邻两个发光元件之间因所述第一电极与所述第二电极的厚度所形成的空隙内填充有透明材料71，以提升整个固态发 光器件10的出光效率；此处的透明材料71可以为无机材料比如氧化硅、氮化硅、氮氧化硅等，也可以是有机材料比如聚甲基丙烯酸甲酯(PMMA)或聚碳酸酯(PC)等，优选为选择折射率为1.5左右的透明材料，例如折射率范围为1.4～1.6。
【第二实施例】
图8是本发明第二实施例的一种显示装置的结构示意图。如图8所示，所述显示装置80包括：驱动基板81，以及设置在所述驱动基板81上且与所述驱动基板81形成电连接的多个显示像素；图8中仅示出一个显示像素作为举例。具体的，单个所述显示像素包括多个不同颜色的子像素例如红色子像素R、绿色子像素G和蓝色子像素B，且每一个所述子像素采用的发光二极管为前述第一实施例所述的任意一种固态发光器件10。所述驱动基板81可以是被动矩阵式驱动基板，也可以是主动矩阵式驱动基板。
更具体地，所述驱动基板81上设置有多个(图8仅示出三个作为举例)电极结构、且每一个所述电极结构包括成对设置的电极811及813；各个子像素R、G、B中的固态发光器件设置在所述驱动基板81上、且与相对应电极结构中的电极811及813形成电性连接。
由上可知，本实施例的显示装置80由于其单个子像素采用单色串联高压发光器件比如单色串联高压Micro-LED芯片，相对于现有技术中采用单PN结构之Micro-LED芯片作为子像素之情形，其可以在保持一定亮度的前提下降低驱动电流，进而可以降低显示装置的功耗。此外，在显示装置的制作过程中，由于固态发光器件10为预先形成堆叠串联结构，不会增加巨量转移难度。再者，由于固态发光器件10中的各个发光元件为在竖直方向上依次堆叠设置，其不会增加在所述驱动基板81上的占用空间，也即不会降低分辨率PPI。
另外，可以理解的是，前述各个实施方式仅为本发明的示例性说明，在技术特征不冲突、结构不矛盾、不违背本发明的发明目的前提下，各个实施方式的技术方案可以任意组合、搭配使用。
最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (17)

  1. 一种固态发光器件，其特征在于，包括：
    多个发光元件，沿竖直方向依次堆叠且串联连接以形成堆叠发光结构；
    其中，每一个所述发光元件包括第一电极、第二电极、和在所述第一电极与所述第二电极之间沿所述竖直方向依次层叠设置的第一半导体层、有源层和第二半导体层；
    其中，在所述竖直方向上，每相邻两个所述发光元件中的一个所述发光元件的所述第一电极与另一个所述发光元件的所述第二电极键合以形成电连接。
  2. 如权利要求1所述的固态发光器件，其特征在于，在所述竖直方向上，所述堆叠发光结构中位于最下方的所述发光元件的所述第一电极为面状金属电极、且所述堆叠发光结构中位于最上方的所述发光元件的所述第二电极为多个点状电极或多个条状电极。
  3. 如权利要求1所述的固态发光器件，其特征在于，在所述竖直方向上，所述堆叠发光结构中位于最下方的所述发光元件的所述第一电极为面状金属电极、且所述堆叠发光结构中位于最上方的所述发光元件的所述第二电极为面状透明电极。
  4. 如权利要求1所述的固态发光器件，其特征在于，键合的所述第一电极与所述第二电极的形状相同、且每一者为多个点状电极或多个条状电极。
  5. 如权利要求1所述的固态发光器件，其特征在于，键合的所述第一电极与所述第二电极分别为相互垂直的条状电极组以形成垂直网格状连接。
  6. 如权利要求1所述的固态发光器件，其特征在于，每相邻两个所述发光元 件之间因所述第一电极与所述第二电极的厚度所形成的空隙内填充有透明材料。
  7. 如权利要求1所述的固态发光器件，其特征在于，所述多个发光元件为多个相同颜色发光元件。
  8. 如权利要求1所述的固态发光器件，其特征在于，所述多个发光元件为多个不同颜色发光元件。
  9. 如权利要求1至8任意一项所述的固态发光器件，其特征在于，每一个所述发光元件为微型发光二极管芯片，所述有源层为多量子阱层，且所述微型发光二极管芯片的长度、宽度和高度均小于100微米。
  10. 一种显示装置，其特征在于，包括：
    驱动基板；以及
    多个显示像素，设置在所述驱动基板上、且与所述驱动基板形成电连接；
    其中，每一个所述显示像素包括多个不同颜色的子像素，且每一个所述子像素采用的发光二极管为如权利要求1至9任意一项所述的固态发光器件。
  11. 如权利要求10所述的显示装置，其特征在于，所述驱动基板为被动矩阵式驱动基板或主动矩阵式驱动基板。
  12. 一种固态发光器件的制作方法，其特征在于，包括：
    提供位于过渡载板上的多个相互间隔的第一发光元件，其中每一个所述第一发光元件包括第一电极、第二电极、和在所述第一电极与所述第二电极之间依次层叠设置的第一半导体层、有源层和第二半导体层，所述第一电极位于所述第一半导体层远离所述有源层的一侧，且所述第二电极位于所述第二半导体层远离所述有源层的一侧；
    提供形成在生长衬底上的多个相互间隔的发光结构，其中每一个所述发光结 构包括依次层叠设置的第三电极、第三半导体层、第二有源层和第四半导体层，且所述生长衬底位于所述第四半导体层远离所述第二有源层的一侧；
    将所述多个相互间隔的发光结构的所述第三电极分别与所述多个相互间隔的第一发光元件的所述第二电极面对面键合，以得到位于所述过渡载板与所述生长衬底之间的多个相互间隔的堆叠结构，其中每一个所述堆叠结构包括一个所述第一发光元件和一个所述发光结构；
    去除所述生长衬底，以暴露出所述多个相互间隔的堆叠结构；以及
    在暴露的所述多个相互间隔的堆叠结构的所述第四半导体层远离所述第二有源层的一侧制作第四电极，以得到位于所述过渡载板上的多个相互间隔的堆叠发光结构从而形成位于所述过渡载板上的多个相互间隔的固态发光器件，其中每一个所述堆叠发光结构包括一个所述第一发光元件和一个第二发光元件，且所述第二发光元件包括一个所述发光结构和所述第四电极。
  13. 如权利要求12所述的固态发光器件的制作方法，其特征在于，所述面对面键合为采用金属键合工艺。
  14. 如权利要求12所述的固态发光器件的制作方法，其特征在于，所述第三电极与所述第二电极的形状相同、且每一者为多个点状电极或多个条状电极。
  15. 如权利要求12所述的固态发光器件的制作方法，其特征在于，所述第三电极与所述第二电极分别为相互垂直的条状电极组以形成垂直网格状连接。
  16. 如权利要求12所述的固态发光器件的制作方法，其特征在于，所述第一发光元件和所述第二发光元件为相同颜色发光元件。
  17. 如权利要求12所述的固态发光器件的制作方法，其特征在于，所述第一发光元件和所述第二发光元件为不同颜色发光元件。
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