WO2023087544A1 - Structure épitaxiale de détecteur photoélectrique ultraviolet à base d'algan de surface polaire n, et procédé de préparation de structure épitaxiale - Google Patents

Structure épitaxiale de détecteur photoélectrique ultraviolet à base d'algan de surface polaire n, et procédé de préparation de structure épitaxiale Download PDF

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WO2023087544A1
WO2023087544A1 PCT/CN2022/073915 CN2022073915W WO2023087544A1 WO 2023087544 A1 WO2023087544 A1 WO 2023087544A1 CN 2022073915 W CN2022073915 W CN 2022073915W WO 2023087544 A1 WO2023087544 A1 WO 2023087544A1
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doped
polar
buffer layer
polar surface
aln
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王文樑
李林浩
李国强
江弘胜
段建华
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华南理工大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of photoelectric device detectors, in particular to an epitaxial structure of an N-polar surface AlGaN ultraviolet photodetector and a preparation method thereof.
  • Group III nitride materials represented by GaN are hot materials for new-generation optoelectronic devices. Due to their wide band gap, fast working speed, excellent electrical and thermal conductivity and extremely low loss, they are regarded It is an excellent alternative material to realize the miniaturization of high-performance optoelectronic devices.
  • the epitaxial structure of the traditional metal-polar AlGaN photodetector is limited by defects such as weak high-temperature thermal stability and the influence of the internal polarization electric field of the material.
  • Polar AlGaN materials are considered as alternative materials for traditional metallic polar AlGaN-based photodetectors. Since AlGaN on the N-polar surface has an opposite built-in electric field direction and a more active surface state than the traditional metal polar surface, the growth of AlGaN materials on the N-polar surface cannot effectively improve its surface quality at this stage.
  • the present invention provides an epitaxial structure of an N-polar surface AlGaN ultraviolet photodetector and a preparation method thereof.
  • the N-polar surface AlGaN ultraviolet photodetector has a large working responsivity and high sensitivity.
  • the first object of the present invention is to provide an epitaxial structure of an N-polar surface AlGaN ultraviolet photodetector.
  • the second object of the present invention is to provide a method for preparing an epitaxial structure of an N-polar surface AlGaN ultraviolet photodetector.
  • the non-doped N-polar surface AlN buffer layer includes a low-temperature growth non-doped N-polar surface AlN buffer layer and a high-temperature growth non-doped N-polar surface AlN buffer layer, and the low-temperature growth non-doped N A polar AlN buffer layer is grown on the silicon substrate, and the high-temperature grown non-doped N-polar AlN buffer layer is grown on the low-temperature grown non-doped N-polar AlN buffer layer.
  • the thickness of the low-temperature-grown non-doped N-polar AlN buffer layer is 100-150 nm, and the thickness of the high-temperature-grown non-doped N-polar AlN buffer layer is 250-380 nm.
  • the thickness of the carbon-doped semi-insulating N-polar AlN buffer layer is 380-440 nm, and the doping concentration is 6.0 ⁇ 10 17 to 4.0 ⁇ 10 18 cm -3 .
  • the thickness of the carbon-doped N polar surface graded AlyGa 1-y N buffer layer is 480-630 nm, and the doping concentration is 5.0 ⁇ 10 16 to 2.0 ⁇ 10 17 cm -3 .
  • the thickness of the non-doped N polar surface AlxGa1 -xN layer is 300-450nm.
  • the silicon substrate is a single crystal silicon substrate, the Si (111) close-packed plane is used as the epitaxial plane, and the AlN [0001] direction is used as the epitaxial growth direction of the material.
  • a method for preparing an epitaxial structure of an N-polar surface AlGaN ultraviolet photodetector comprising:
  • the silicon substrate is placed in a vacuum chamber, and a non-doped N-polar surface AlN buffer layer is epitaxially grown on the silicon substrate, thereby preparing an N-polar surface AlN sample;
  • N-polar AlN sample into the growth chamber, and feed NH 3 , N 2 , H 2 , CH 4 and trimethylaluminum into the chamber.
  • the temperature of the chamber is lowered, and trimethylgallium is introduced into the chamber at the same time, and the carbon-doped semi-insulating N-polar AlN buffer layer is In-situ growth of carbon-doped N polar surface composition graded AlGaN buffer layer on the layer;
  • the gas path of CH4 is closed, and the temperature of the chamber is increased.
  • the non-doped N-polar AlGaN layer is grown in situ on the surface composition graded AlGaN buffer layer, and the change of the Al composition of the film is regulated by adjusting the flow rate of trimethylaluminum and the growth temperature.
  • the epitaxial growth of the non-doped N-polar surface AlN buffer layer on the silicon substrate, thereby preparing the N-polar surface AlN sample specifically includes:
  • the silicon substrate is grown under N-rich conditions at a low temperature to grow an AlN buffer layer on a non-doped N polar surface, and the Al source is an AlN high-purity ceramic target;
  • the temperature of the system is increased, and the vacuum degree, laser energy, laser frequency and nitrogen flow in the cavity are kept constant.
  • a high-temperature non-doped N-polar surface AlN buffer layer is grown on the N-polar surface AlN buffer layer to prepare an N-polar surface AlN sample.
  • the silicon substrate is a single crystal silicon substrate, the Si(111) close-packed plane is used as the epitaxial plane, and the AlN [0001] direction is used as the material epitaxial growth direction.
  • the present invention has the following beneficial effects:
  • the N-polar surface AlGaN ultraviolet photodetector epitaxial structure provided by the present invention grows a layer of carbon-doped step-type N-polar AlGaN film under the non-doped N-polar surface AlGaN layer, by enhancing the carrier The mobility can effectively increase the photocurrent generation of non-doped N-polar AlGaN thin films, and enhance the power and detectability of AlGaN-based ultraviolet detectors.
  • the present invention uses N-polarity AlGaN as the basic material of the device. Compared with metal-polarity AlGaN materials, it can effectively improve the high-temperature stability of the device structure, reduce the influence of the internal polarization electric field of AlGaN, and effectively improve the ultraviolet photoelectric detection. The photoelectric responsivity of the device and effectively reduce the difficulty of subsequent device processing.
  • the present invention adopts the two-step growth method of low-temperature pulsed laser deposition combined with high-temperature MOCVD to grow the materials required for the epitaxial structure of AlGaN ultraviolet photodetectors on the N-polar surface, and through the structural design of the step-by-step AlGaN epitaxial buffer layer, it can Effectively suppress the reflow etching reaction between the III-nitride and the silicon substrate at high temperature, and the large lattice mismatch between the heterostructures, thereby reducing the dislocation density of the N-polar AlGaN epitaxial layer grown by high-temperature MOCVD and surface roughness.
  • FIG. 1 is a schematic diagram of an epitaxial structure of an AlGaN ultraviolet photodetector on an N-polar plane according to an embodiment of the present invention.
  • Fig. 2 is an atomic force microscope image of the surface morphology of an N-polarity AlGaN epitaxial wafer according to an embodiment of the present invention.
  • FIG. 3 is an X-ray rocking curve test chart of an N-polarity AlGaN (0002) thin film according to an embodiment of the present invention.
  • 1-Silicon substrate 2-Low temperature growth of non-doped N-polar surface AlN buffer layer, 3-High temperature growth of non-doped N-polar surface AlN buffer layer, 4-Carbon doped semi-insulating N-polar AlN buffer layer , 5-carbon-doped N-polar surface composition graded AlGaN buffer layer, 6-non-doped N-polar surface AlGaN layer.
  • This embodiment provides a method for preparing an epitaxial structure of an AlGaN ultraviolet photodetector with an N-polar surface, the method comprising:
  • the silicon substrate is a single crystal silicon substrate, the Si(111) close-packed surface is used as the epitaxial surface, and the AlN [0001] direction is used as the epitaxial growth direction of the material;
  • the silicon substrate is placed in a vacuum chamber, the temperature is raised to 420-500°C, the vacuum in the chamber is pumped to 2.0 ⁇ 10 -4 to 4.0 ⁇ 10 -4 torr, and the laser energy is 250 ⁇ 320mJ, laser frequency 15 ⁇ 30Hz, nitrogen flow rate 2 ⁇ 10sccm, grow N-polar AlN film under N-rich conditions, Al source is AlN high-purity ceramic target;
  • the temperature is increased to 850°C, and the vacuum degree, laser energy, laser frequency and nitrogen flow in the cavity are kept constant, and the high-temperature N-polar AlN film is epitaxially grown on the N-polar AlN film.
  • the prepared N-polar AlN sample is placed in the growth chamber, and the chamber is vacuumed to 2.0 ⁇ 10 -6 ⁇ 4.0 ⁇ 10 -6 torr, The temperature is raised to 1000-1100°C, and NH 3 , N 2 , H 2 , CH 4 and trimethylaluminum are introduced into the chamber to epitaxially grow on the epitaxial wafer of the high-temperature non-doped N-polar surface AlN buffer layer Carbon-doped semi-insulating N-polar AlN buffer layer; during vapor deposition, the pressure in the reaction chamber is 180-220torr, and the flow rates of NH 3 , H 2 , CH 4 , and trimethylaluminum are 30-50slm, 60-100slm, and 10 ⁇ 20slm and 350 ⁇ 440sccm;
  • MOCVD technology metal organic compound chemical vapor deposition growth method
  • the temperature of the chamber is lowered to 770-800°C, and at the same time, trimethylgallium is introduced into the chamber to in-situ grow carbon-doped Gradient AlGaN buffer layer on the N polar surface;
  • the pressure of the reaction chamber in vapor deposition is 180-240torr, and the flow rates of NH 3 , H 2 , CH 4 , trimethylaluminum and trimethylgallium are 30-50slm and 60-100slm respectively , 15 ⁇ 24slm, 400 ⁇ 450sccm and 100 ⁇ 150sccm;
  • the reaction chamber pressure is 180-240 torr
  • the flow rates of NH 3 , H 2 , trimethylaluminum and trimethylgallium are 30-50slm, 60-100slm, 400-450sccm and 100-150sccm, respectively.
  • the epitaxial structure of the N-polar surface AlGaN ultraviolet photodetector prepared in this embodiment is shown in FIG. 1 .
  • a method for preparing an epitaxial structure of an AlGaN-based ultraviolet photodetector on an N-polar surface is specifically as follows:
  • Substrate surface cleaning Put the silicon substrate into acetone, absolute ethanol, and deionized water in sequence, and ultrasonically clean it for 5 minutes in sequence. After taking it out, rinse it with deionized water and dry it with hot high-purity nitrogen;
  • step (6) Epitaxial growth of carbon-doped N polar surface composition graded AlyGa 1-y N layer: After completing step (5) film growth in MOCVD, lower the chamber temperature to 780°C, Through trimethylgallium, the carbon-doped N polar surface composition graded AlGaN buffer layer is grown in situ on the epitaxial wafer.
  • the pressure of the reaction chamber is 210torr
  • step (6) Epitaxial growth of non-doped N-polar Al x Ga 1-x N layer: After the film growth in step (6) is completed in MOCVD, the gas path of CH 4 is closed, and the temperature of the chamber is raised to 830°C. The non-doped N-polar AlGaN layer is grown in situ on the epitaxial wafer. In the vapor phase deposition, the reaction chamber pressure is 210torr, and the flow rates of NH 3 , H 2 , trimethylaluminum and trimethylgallium are 40slm, 80slm, 430sccm, and 120sccm, respectively. At the same time, the change of the Al composition of the film layer was regulated by adjusting the flow rate of trimethylaluminum and the growth temperature.
  • the N-polar surface AlGaN ultraviolet photodetector epitaxial structure obtained in this embodiment includes non-doped N-polar surface AlN buffer layers (including low-temperature growth of non-doped N-polar surface AlN buffer layers) grown sequentially on the silicon substrate 1.
  • Layer 2 and high temperature growth non-doped N polar face AlN buffer layer 3 carbon doped N polar face AlN layer 4, carbon doped N polar face composition graded A y Ga 1-y N buffer layer 5 and Non-doped N polar surface AlxGa1 -xN layer 6; wherein, the buffer layer of the non-doped N polar surface AlN layer is 420nm, wherein the thickness of the low-temperature growth non-doped N polar surface AlN buffer layer is 120nm, The thickness of the non-doped N polar surface AlN buffer layer grown at high temperature is 300nm, the thickness of the carbon doped N polar surface AlN layer is 380nm, and the doping concentration is 2.0 ⁇ 10 18 cm -3 ; the carbon doped N polar surface component Gradient Al y Ga 1-y N (the value of y changes from 0.95 to 0.75 from bottom to top) buffer layer thickness is 500nm, doping concentration is 1.5 ⁇ 10 17 cm -3 ; non-doped N polar
  • the epitaxial structure of the N polar surface AlGaN ultraviolet photodetector prepared in this example is shown in Figure 1.
  • the AFM characterization of the surface of the AlGaN thin film is shown in Figure 2. It can be seen that the surface quality is good; the N pole See Figure 3 for the test results of the X-ray rocking curve of the AlGaN (0002) thin film. It can be seen that the crystal quality of the thin film is good.
  • a method for preparing an epitaxial structure of an AlGaN-based ultraviolet photodetector on an N-polar surface is specifically as follows:
  • Substrate surface cleaning Put the silicon substrate into acetone, absolute ethanol, and deionized water in sequence, and ultrasonically clean it for 5 minutes in sequence. After taking it out, rinse it with deionized water and dry it with hot high-purity nitrogen;
  • step (6) Epitaxial growth of carbon-doped N polar surface composition graded AlyGa 1-y N layer: After completing step (5) film growth in MOCVD, lower the chamber temperature to 780°C, Through trimethylgallium, the carbon-doped N polar surface composition graded AlGaN buffer layer is grown in situ on the epitaxial wafer.
  • the reaction chamber pressure is 210torr
  • step (6) Epitaxial growth of non-doped N-polar Al x Ga 1-x N layer: After the film growth in step (6) is completed in MOCVD, the gas path of CH 4 is closed, and the temperature of the chamber is raised to 830°C. The non-doped N-polar AlGaN layer is grown in situ on the epitaxial wafer. In the vapor phase deposition, the reaction chamber pressure is 210torr, and the flow rates of NH 3 , H 2 , trimethylaluminum and trimethylgallium are 40slm, 80slm, 430sccm, and 120sccm, respectively. At the same time, the change of the Al composition of the film layer was regulated by adjusting the flow rate of trimethylaluminum and the growth temperature.
  • a method for preparing an epitaxial structure of an AlGaN-based ultraviolet photodetector on an N-polar surface is specifically as follows:
  • Substrate surface cleaning Put the silicon substrate into acetone, absolute ethanol, and deionized water in sequence, and ultrasonically clean it for 5 minutes in sequence. After taking it out, rinse it with deionized water and dry it with hot high-purity nitrogen;
  • step (6) Epitaxial growth of carbon-doped N polar surface composition graded AlyGa 1-y N layer: After completing step (5) film growth in MOCVD, lower the chamber temperature to 780°C, Through trimethylgallium, the carbon-doped N polar surface composition graded AlGaN buffer layer is grown in situ on the epitaxial wafer.
  • the pressure of the reaction chamber is 210torr
  • step (6) Epitaxial growth of non-doped N-polar Al x Ga 1-x N layer: After completing step (6) film growth in MOCVD, close the gas path of CH 4 , raise the chamber temperature to 850°C, and The non-doped N-polar AlGaN layer is grown in situ on the epitaxial wafer.
  • the pressure of the reaction chamber is 240torr, and the flow rates of NH 3 , H 2 , trimethylaluminum and trimethylgallium are 50slm, 100slm, 450sccm, and 120sccm, respectively.
  • the change of the Al composition of the film layer was regulated by adjusting the flow rate of trimethylaluminum and the growth temperature.
  • the N-polar surface AlGaN ultraviolet photodetector epitaxial structure obtained in this embodiment includes a non-doped N-polar surface AlN layer buffer layer, a carbon-doped N-polar surface AlN layer, a carbon-doped N-polar surface AlN layer, and a carbon-doped
  • the hetero-N polar surface composition graded Al y Ga 1-y N buffer layer (from bottom to top y 0.95 ⁇ 0.75) and the non-doped N polar surface Al x Ga 1-x N layer; the non-doped
  • the buffer layer of the AlN layer on the N polar surface is 500nm, and the thickness of the AlN buffer layer on the non-doped N polar surface grown at low temperature is 150nm, and the thickness of the AlN buffer layer on the high temperature grown non-doped N polar surface is 350nm;
  • the thickness of the AlN layer on the surface is 400nm, and the doping concentration is 2.0 ⁇ 10 18 cm -3 ; the carbon-doped

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Abstract

Sont divulgués dans la présente invention une structure épitaxiale d'un détecteur photoélectrique ultraviolet à base d'AlGaN de surface polaire N, et un procédé de préparation de la structure épitaxiale. La structure épitaxiale d'un détecteur photoélectrique ultraviolet à base d'AlGaN de surface polaire N comprend : une couche tampon d'AlN de surface polaire N non dopée, une couche tampon d'AlN polaire N semi-isolée dopée au carbone, une couche tampon d'AlyGa1-yN à gradient de composition de surface polaire N dopée au carbone et une couche d'AlxGa1-xN de surface polaire N non dopée, qui sont séquentiellement développées sur un substrat de silicium, où x = 0,5 à 0,8, et y = 0,75 à 0,95. À l'aide de la structure épitaxiale d'un détecteur photoélectrique ultraviolet à base d'AlGaN de surface polaire N selon la présente invention, la puissance et la vitesse de détection d'un détecteur ultraviolet à base d'AlGaN sont améliorées, ce qui permet d'augmenter un degré de réponse photoélectrique du détecteur photoélectrique ultraviolet, et de réduire efficacement la difficulté d'usinage ultérieure dans un dispositif. À l'aide du procédé de préparation fourni selon la présente invention, la densité de dislocation et la rugosité de surface d'une couche épitaxiale d'AlGaN polaire N, qui est développée au moyen d'un MOCVD à température élevée, sont réduites.
PCT/CN2022/073915 2021-11-19 2022-01-26 Structure épitaxiale de détecteur photoélectrique ultraviolet à base d'algan de surface polaire n, et procédé de préparation de structure épitaxiale WO2023087544A1 (fr)

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