WO2023078528A1 - Verfahren und vorrichtung zur kompensation von verzerrungen - Google Patents
Verfahren und vorrichtung zur kompensation von verzerrungen Download PDFInfo
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- WO2023078528A1 WO2023078528A1 PCT/EP2021/080376 EP2021080376W WO2023078528A1 WO 2023078528 A1 WO2023078528 A1 WO 2023078528A1 EP 2021080376 W EP2021080376 W EP 2021080376W WO 2023078528 A1 WO2023078528 A1 WO 2023078528A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- distortions
- substrate surface
- distortion
- compensation
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Definitions
- the invention relates to a method and a device according to the independent patent claims.
- wafers In the semiconductor industry, different substrates are used to produce components, so-called devices. The most commonly used type of substrates are so-called wafers.
- the manufacturing process of such a component includes several, sometimes hundreds, processes with several process steps.
- the processes are, for example, coating, embossing, exposure, cleaning, etching, bonding, debonding or back-thinning processes.
- the aim of the different processes is usually the production of several hundred to thousands of individual components on a substrate.
- lithographic mask can be defined with high accuracy in a computer become. However, their production will be subject to errors due to the manufacturing process. A defective mask necessarily results in defective exposures. It is also conceivable that a maskless lithography method is used, in which one or more SLMs (spatial light modulators), in particular DMDs (digital micromirror devices), are used, with which an incorrect exposure takes place that has to be corrected .
- SLMs spatial light modulators
- DMDs digital micromirror devices
- a substrate can have very precise structures on a substrate surface. However, if the rear side of the substrate is ground back or even just polished, this can lead to undesired distortion of the substrate, in particular the substrate surface.
- substrates are also deformed and distorted over a large area.
- substrates are thinned by the grinding and/or polishing processes on the one hand, and internal stresses are built into the substrates on the other hand, which lead to a convex, concave curvature or to a global curvature pattern that changes as a function of location.
- components on such substrates are subsequently distorted again, even if they were in an undistorted state before the grinding and/or polishing processes.
- distortion can either be of a mechanical nature, such as that which occurs when mechanical stresses are introduced during a grinding process, or it can be the deviation of a photolithographically exposed layer from its target state, which is caused by a defective or at least poorly manufactured lithographic mask . In this case, therefore, the substrate on which the photolithographically exposed layer is located may itself be undistorted, but the structure produced thereon will be produced distorted.
- the distortions are generally location dependent. In particular, they change continuously as a function of location.
- the distortions can therefore also be specified as distortion fields. So distortions are either local and/or global. For the sake of simplicity, however, only distortions are mentioned in the further course of the publication.
- Distortions are preferably described as vectors, in particular as two-dimensional ones. The vectors lie within a tangent plane to their point of origin.
- Distortions can be present and/or compensated either on the active substrate surface and/or on the passive substrate surface opposite the active substrate surface.
- Active substrate surface is understood in particular as that substrate surface on which functional elements, for example MEMS, LEDs, transistors, coatings etc. are located, while the matching substrate surface is used for fixing, for example. Any passive substrate surface can become an active substrate surface in a manufacturing process. It is also conceivable that a substrate has two active substrate surfaces. At the beginning of a process, both substrate surfaces are mostly passive. In the case of thin substrates in particular, it is conceivable that the compensation for a distortion has an effect across the substrate thickness and thus also on the opposite side of the substrate. This makes it possible to compensate for distortions on the active substrate surface from the passive substrate surface. However, the distortions are preferably compensated for directly on the active substrate surface, in particular because this makes particularly efficient monitoring possible and conceivable.
- the publication WO2012083978A1 shows e.g. a substrate holder that can compensate for local and/or global distortions of a substrate with the help of several deformation elements.
- the publication WO2021079786A1 shows a device that can be used to measure and partially compensate for distortions.
- the substrate returns to its original shape, i.e. it behaves elastically.
- attempts are made to compensate for the distortions caused by such substrate holders before carrying out further process steps on the substrate.
- One of the most important procedures to ensure that the local and/or global Distortions on at least one substrate surface have been compensated before proceeding further is the above-mentioned bonding.
- the invention relates to a method for compensating for distortions on at least one substrate surface of a substrate, at least one local action being generated on at least one of the substrate surfaces.
- the invention further relates to a device for compensating for distortions on at least one substrate surface of a substrate, wherein at least one local action can be generated on at least one of the substrate surfaces.
- the invention further relates to a product produced using the method according to the invention and/or the device according to the invention.
- the at least one local action is generated with the aim of generating deformations in order to bring the substrate into a desired shape.
- a sub-area of the substrate that has no distortion can be deformed by the at least one local action in order to compensate for a distortion in another sub-area.
- the at least one local action compensates for the at least one distortion on at least one substrate surface and, in particular, generates deformations at another location.
- the newly created deformations will enhance the newly created condition of the at least one substrate surface.
- the device has means for generating the local action, with the means for generating the local action preferably comprising a laser.
- the substrate is in particular a wafer.
- the substrate or the sub strate can have any shape, but they are preferably circular.
- the diameter of the substrates is industrially standardized.
- the industry standard diameters are 1 inch, 2 inch, 3 inch, 4 inch, 5 inch, 6 inch, 8 inch, 12 inch and 18 inch.
- the In principle, however, the invention can be used for any substrate, regardless of its diameter.
- Distortion includes both local and global distortions.
- Local distortions are understood to mean, in particular, locally limited, small-area distortions that have little or no influence on the entire area of the substrate.
- Global distortion is understood to mean, in particular, the large-area deviation of a substrate, in particular a wafer, from its planar shape.
- Thin substrates in particular have the property of deforming or bending over a large area as a result of mechanical and/or chemical influences and/or gravitation. In such cases, the substrates exhibit strong global deviations from flatness. For example, a convex, sagging shape of a substrate that is only peripherally fixed to an upper substrate holder is typical. These gravitational effects are mostly reversible as soon as the substrate is fully supported. Grinding and polishing processes can permanently and extensively curve a substrate. These bulges can be convex, concave, or change as a function of location.
- Coating and/or etching of a substrate can also lead to global distortion.
- the most common global distortion is due to the difference in thermal expansion coefficients between the coating and the substrate. Since coatings are usually carried out at higher temperatures and the coated substrate is cooled down after coating, the build-up of thermal stresses causes global distortion of the substrate.
- Global distortions can be compensated by compensating for local distortions.
- a global distortion can be compensated for by carrying out multiple compensations for local distortions along a grid of the at least one substrate surface. The type and/or strength, in particular the intensity, of the compensations in the grid changes as a function of location in such a way that the global distortion is compensated for.
- the origin of distortions can also be differentiated according to whether the distortions are caused by the property of the substrate or by the environment. For example, a coating, a grinding or polishing process, components created in the substrate, a density of components on the substrate that varies as a function of location, etc. can lead to distortions. These distortions are called intrinsic. The distortions can also only occur when the substrate is fixed to a substrate holder and may even be reversible, i.e. they usually disappear when the substrate holder is removed. These distortions are called extrinsic. However, since the substrates are usually processed on a substrate holder, compensation for distortions caused by a substrate holder is also of great importance. Such distortions can also be compensated according to the invention. Extrinsic distortions are caused, for example, by a specific substrate holder topography. No substrate holder surface can be ground and polished perfectly and always has a waviness.
- the invention is suitable for compensating for all types of distortion mentioned.
- the local action includes or generates:
- the distortions are located in particular on an active substrate surface.
- the active substrate surface has structures in particular, such as LEDs, MEMS, etc.
- One or more distortions can be compensated. These can be compensated simultaneously or sequentially.
- the at least one local action can be generated on the active substrate surface and/or on a passive substrate surface opposite the active substrate surface.
- Several local actions can be created, which are created simultaneously or one after the other. If several local actions are generated, these can be generated on the active substrate surface and/or on the passive substrate surface.
- the substrate it is particularly advantageously possible to introduce permanent, in particular plastic, changes in the substrate, preferably locally in a targeted manner.
- the local action is generated by electromagnetic radiation, preferably by a laser.
- the electromagnetic radiation or the laser has the necessary parameters with which a physical and/or chemical reaction can be triggered in the vicinity of the distortion, so that the distortion can be compensated for.
- the electromagnetic radiation or the laser it is not necessary for the electromagnetic radiation or the laser to act precisely on the point of distortion.
- the laser must act on the vicinity of the distortion in such a way that the distortion is compensated.
- a laser is used whose pulse duration can be adjusted. If the pulse duration cannot be adjusted, a laser with the shortest possible pulse duration, preferably in the picosecond or femtosecond range, is used. Short pulse durations cause purely local heating, which may be necessary to bring about the physical and/or chemical reaction mentioned, which is necessary for compensating for the distortion.
- the pulse durations are less than 10' 5 s, preferably less than 10' 7 s, more preferably less than 10' 9 s, most preferably less than 10' 12 s, most preferably less than 10' 15 s.
- the laser power is greater than 1 watt, preferably greater than 10 watts, more preferably greater than 100 watts, most preferably greater than 1000 watts, most preferably greater than 10000 watts.
- a laser is used whose laser beam shape can be shaped, in particular by optical elements. This advantageously makes it possible to switch between a circular and a longitudinal laser beam.
- a longitudinally shaped laser beam will result in an anisotropic effect since its horizontal photon density distribution is different from its vertical photon density distribution.
- the laser is used in a maskless exposure device which has at least one SLM (spatial light module), in particular at least one DMD (digital micromirror device).
- SLM spatial light module
- DMD digital micromirror device
- the substrate surface is monitored, with the compensation being observed in-situ.
- a laser is preferably coupled into an optical system of a metrology device which can be used to monitor the substrate surface. This creates a particularly efficient way of observing the compensation for the distortion in situ.
- a change in density can occur either through the removal of a dissolved component, the absorption, ie the solution, of a component or through the formation of bubbles or pores.
- the formation of bubbles or pores i st Usually undesirable, but can be acceptable if the laser exposure side is ground or polished away in a later process step.
- the action of the electromagnetic radiation or the laser beam leads to a solid-state phase transformation.
- the solid state phase transformation should preferably not be reversible.
- the substrate has at least one metastable phase in order to be converted into a stable phase by the heat effect of the laser beam, which remains stable even after the environment has cooled down.
- the amorphization of at least one substrate surface, which then recrystallizes after exposure to a laser beam is conceivable.
- phase transformation results in residual tensile or compressive stresses that deform the immediate surroundings, in particular elastically.
- the effect of the laser beam and the associated heating produce thermal stresses and/or an expansion of the material, which lead to plastic deformation of the material.
- the material is preferably a metal. It would be conceivable, for example, that the metallic TSV surfaces in a hybrid substrate surface be bombarded in a targeted manner in order to generate plastic deformation there, which leads to compensation for the distortions.
- the local action is generated by a coating applied to the substrate surface.
- the substrate surface in particular the passive substrate surface, is preferably coated. Internal stresses and/or thermal stresses are preferably built into the coating.
- the coating is a metal, a metal alloy, an oxide or a ceramic. Residual stresses can be adjusted by bombarding the coating with particles on an atomic scale, in particular ions, less preferably with coarse-grained particles on a nanometer or micrometer scale.
- the residual stresses set in this way are predominantly compressive residual stresses.
- Thermal stresses can be adjusted by the targeted deposition of a material with a known coefficient of thermal expansion. If the thermal expansion coefficient of the substrate differs from that of the coating, either tensile or compressive residual stresses arise in the coating when it is cooled from a coating temperature to an ambient temperature.
- the coating can preferably be structured. Due to the structuring, i.e. the removal of material, internal stresses in the coating are locally reduced or increased. As a result, the coating also influences the underlying substrate and thus the distortion. In particular, the structuring can take place in such a way that the thickness of the coating is locally removed only partially. By setting a relief, the stress states in the coating and thus also in the substrate can be changed and the distortion in the substrate can be compensated.
- the coating is an oxide, and in a particularly preferred embodiment it is a native oxide.
- many substrates that come into contact with the environment are always coated with a native oxide that is a few nanometers thick. This eliminates the costly production of a coating.
- the coating can in particular consist of at least one of the following materials or material classes...
- Si3N4 Silicon nitride
- the stress state of the coating and thus of the underlying substrate is preferably changed by the local, targeted removal or structuring of the oxide. This change in turn requires compensation for the distortion. If the native oxide is too thin, a thermal oxide can be created.
- the thermal oxide is particularly advantageously produced on the active substrate surface before the production of active components. This means that the active components are not exposed to high thermal loads.
- a substrate with a thermal oxide is purchased and the active substrate surface is freed from the thermal oxide by thinning back, so that the thermal oxide only remains on the passive substrate surface.
- the coating is a polymer.
- the internal stresses here are mainly caused by the curing of the polymer, which in particular leads to crosslinking of the polymer.
- the polymer is structured by photolithography and/or imprint lithography.
- residual stresses in particular residual tensile or compressive stresses (hereinafter simply referred to as residual stresses) can be generated.
- the internal stresses generated in this way cause a mostly elastic deformation of the surrounding material and are therefore able to compensate for the existing distortions. If the internal stresses remain, the elastic deformation and thus the compensation of the distortions also remain.
- the elastic compensation of distortions thus describes a further possibility for compensating for distortions, in addition to compensating for distortions due to permanent, in particular plastic, deformation.
- the internal stresses mentioned are caused in particular by layers applied to the at least one substrate surface, which layers can in particular be structured.
- the invention is particularly suitable for compensating for deviations from the target state that result from process steps that have already taken place, in order to prepare the substrates for subsequent process steps, in particular in order to be able to achieve better results in the subsequent process steps.
- the invention can preferably also be used to compensate in advance for known and/or expected irregularities in future process steps, in particular to make provision for them.
- expected distortions are maintained.
- the substrates are deformed before a process is carried out using the method according to the invention in such a way that the process can take place more uniformly and irregular distortions are thus minimized, in particular largely eliminated.
- the at least one local action causes deformations of the substrate, in particular at the edges of the substrate.
- the substrate is bent upwards at least in certain areas at the edges. This can be caused in particular by laser bombardment at the edges of the substrate.
- the distortions are compensated for by the deformations of the substrate.
- the target state of the substrate can be such that the periphery of the substrate is slightly curved upwards.
- the actions according to the invention are carried out in such a way that, on the one hand, the distortions on the substrate surface can be compensated for and, at the same time, the periphery of the substrate curves slightly upwards. In a subsequent bonding process, this can preferably reduce or even prevent the formation of edge defects (edge voids).
- the curvature of the substrate is adjusted in such a way that the edges curve concavely in relation to the bond contact surface so that the natural acceleration of the bond wave towards the wafer edge is counteracted, and the bond wave is preferably up to 5 mm in particular up to 3 mm, with particular preference up to 2 mm towards the edge at a continuous speed and/or has a radius of curvature at the contact point of the wafer which deviates at most +/-30% or preferably +/-20% from the radius of curvature at the contact point of the wafer , which is present after 50mm from the bond initiation point.
- the edges of at least one of the two wafers are curved in a convex manner with respect to the bonding contact surface so that during the later bonding process the lower distortion of the wafer in the edge area, which is often observed, is caused in particular by the falling atmospheric pressure in the space between the wafers, immediately in front of the contact point of the wafers along the bonding shaft, is held up by compensation using the method according to the invention.
- the local action is generated by removing material from the substrate.
- parts of the substrate are removed on at least one of the substrate surfaces. Removal is by sawing, laser, ion or atomic bombardment or any other suitable method of material removal.
- the substrate will deform accordingly in the vicinity of the material removal, in particular if it has internal stresses.
- This embodiment is particularly suitable for use on the passive substrate surface, in particular if this is to be thinned back in a later method step by a back-thinning process.
- the substrate can be further processed.
- the invention can be used to change distortion of the lithographic pattern. This ensures that subsequent method steps are carried out on an undistorted or rectified layer.
- a method is carried out in which the substrate surface is measured and the distortions on the substrate surface are then compensated for and the substrate surface is then measured again.
- a first method step at least one, in particular the active, substrate surface is measured.
- the Measurement is preferably carried out with an interferometer.
- the measurement of the substrate surface leads to a distortion map.
- the distortion map represents the deviation of the actual state from the target state.
- the distortion map is saved by software or hardware.
- the necessary compensations are calculated in order to convert the actual state into the target state, i.e. to compensate for all distortions accordingly.
- This step can be omitted if the compensation method according to the invention can be carried out using obvious steps. If, for example, distortions along an x-axis have to be compensated for and it is known that the application of a compensation method according to the invention at a point on the x-axis delivers the necessary result, an exact calculation can be dispensed with.
- the calculations are preferably carried out using models which describe the effect of the compensation method on the distortion.
- these are mechanical cal models.
- models that describe experimentally obtained data can also be used with advantage. Both variants can or will preferably be combined and the mechanical model is preferably continuously calibrated, in particular with experimentally obtained data.
- the models particularly preferably use finite element methods (FEM) simulations, at least in part.
- At least one inventive compensation method is carried out in order to compensate for the distortions.
- the compensation method according to the invention is used in parallel with the Measurement of the substrate surface.
- a control loop can be used to monitor any distortion compensation that is carried out and regulate it accordingly. Due to the in-situ monitoring of the compensation, a particularly fast, exact and cost-effective compensation of all distortions is possible.
- a fourth method step the at least one, in particular the active, substrate surface is measured again.
- the measurement of the substrate surface again leads to a distortion map.
- the distortion map represents the deviation of the actual state from the target state.
- the distortion map is saved by software or hardware. If the distortion map still shows too many and/or excessive distortions, individual positions on the substrate surface can be approached again and the third method step is repeated accordingly. If a distortion map with minimal distortions, in particular no more distortions, is measured, the method can be aborted.
- the distortion imposed by the compensation method according to the invention is determined by forming the difference between the measurement before the method and after the method.
- This information can be used in a feedback loop for, in particular, continuous calibration of the compensation method according to the invention.
- the process and/or device parameters for subsequently processed substrates can thus preferably be selected in such a way that the results better achieve the desired target state.
- This continuous calibration preferably enables stable results over a large number of substrates if the quality of these substrates is subject to a trend.
- Another subject matter of the invention relates to a method for bonding two substrates, with distortions of at least one of the substrates being compensated for using the method according to the invention or with the device according to the invention, and the two substrates then being bonded to one another.
- the course of the bond wave can be influenced by the compensation of the distortions according to the invention.
- the bonding wave should preferably propagate symmetrically and/or concentrically in relation to the contact point.
- the distortions are particularly preferably influenced in such a way that the bonding wave speed decreases towards the edge. As a result, the formation of edge defects is minimized or even avoided as far as possible. At least one of the two substrates involved in the bonding process is convexly curved towards the bond interface. The distortions are therefore compensated for in particular in such a way that there is a slightly convex curvature towards the bonding interface.
- the distortions are preferably compensated for in such a way that the substrate surface can be described as part of a sphere, a parabola or an ellipsoid during bonding.
- ideal bonding results can be achieved, i.e. the deviations between the partial areas of both substrates to be bonded are minimized.
- a first substrate can be bonded to a second substrate. It is conceivable that the distortions of the second substrate were also compensated for by the method according to the invention. But it is also conceivable that the distortions of the first substrate have been compensated in such a way that the areas of the two substrates to be bonded to one another are congruent or have minimal deviations from one another. In this case, the distortion compensation need only be performed on the first substrate.
- a prerequisite for a good bonding result is, in particular, that the positions of the areas to be bonded to each other on both substrates have been measured very well.
- the invention is particularly suitable for compensating for the distortions of substrate surfaces of two hybrid substrates that have electrical and dielectric areas.
- the metallic areas of the hybrid substrates are the surfaces of the TSVs (through silicon vias), which must be positioned correctly before and after the bonding process in order to guarantee an intact electrical connection between the two substrates.
- distortion maps are recorded as described in publication WO2012079786A1.
- Figure la a plan view of a substrate in a target state
- FIG. 1b shows a top view of a substrate in an actual state
- FIG. 1 c is a plan view of a substrate with compensated distortion
- FIG. 2 shows a side view with several according to the invention
- Figure 3 is a side view of a substrate with global distortions
- Figure 4 is a side view of the substrate without global distortions.
- the same components or components with the same function are identified by the same reference symbols.
- FIG. 1a shows a top view of a very simplified substrate 1 in a desired state.
- the substrate 1 has five structures 2 on its active substrate surface 1a.
- the structures 2 can be components such as MEMS, LEDs or chips. It is conceivable that the structures 2 are lithographically produced structures. For the sake of simplicity, only five structures 2 are shown and each of the structures 2 is symbolized by a simple square. The number, shape, orientation of the structures 2 can generally be arbitrary.
- Figure 1a represents the target state, i.e. the optimal arrangement and orientation of structures 2 in relation to substrate 1.
- Figure 1a shows a coordinate system with an X and a Y axis for structure 2 on the right. These two axes span a plane for structure 2 on the right.
- FIG. 1b shows a top view of a very simplified substrate 1 in an actual state and an enlargement of a structure 2' in the lower right corner.
- Errors in the production or influencing of the active substrate surface 1a and/or a passive substrate surface 1p can cause some, generally all, structures 2, 2′ to deviate 4 from their target positions and orientations.
- This deviation 4 is shown in FIG. 1b using the structure 2' on the right.
- Structure 2' is translated along the x and y axes. A slight rotation to the ideal position would also be conceivable. For the sake of clarity, this is not shown in the figure.
- the deviation 4 from the target position is referred to as distortion.
- FIG. 1c shows a top view of a very simplified substrate 1 in which a compensation method according to the invention, in the present case the action of a laser 3, 3', leads to a compensation 7 of the distortion 4.
- Two laser points 3, 3' are shown.
- the laser point 3 has an elongated shape and is aligned vertically, the laser point 3' has a circular shape.
- the laser points 3 , 3 ′ each produce corresponding areas of influence 6 , 6 ′ in which physical and/or chemical reactions take place, which lead to the compensation 7 of the distortion 4 .
- These two laser points 3, 3' are also intended to illustrate that several laser point shapes are possible.
- the compensation method according to the invention is carried out on the active substrate surface 1a. All compensation methods can also be carried out on the passive substrate surface 1p, which is opposite the active substrate surface 1a.
- FIG. 2 shows a side view of a substrate 1.
- the substrate 1 has a plurality of structures 2 on its active substrate surface 1a.
- the substrate will again show distortions at different positions. These distortions are not shown explicitly in FIG.
- Several exemplary compensation methods according to the invention are illustrated by means of enlargements (A-D).
- the two enlargements A each describe the compensation 7 of distortions 4 by introducing energy with the aid of electromagnetic waves, in particular a laser and/or particles, in particular ions.
- an area of influence 6 in which a physical and/or chemical reaction takes place, which is in particular irreversible and can each contribute to the compensation 7 of the distortion 4.
- the enlargements A were shown on the active substrate surface 1a and on the passive substrate surface 1p in order to show that this type of compensation 7 can advantageously be carried out on both substrate surfaces 1a, 1p.
- the enlargement B describes the compensation 7 of distortions 4 by introducing energy with the aid of electromagnetic waves, in particular a laser and/or particles, in particular ions, into a coating 5 which is located on the substrate 1.
- the coating 5 is preferably located on the passive substrate surface 1p, since the active substrate surface 1a is preferably uncoated for further processing.
- the coating 5 is changed in the area of influence 6 in such a way that residual tensile or compressive stresses build up in it. These, in turn, can be generated by the same physical and/or chemical reactions as in other compensation methods. It would be conceivable, for example, for a metastable phase to be converted into a stable phase which has a larger volume than the metastable phase. In this case, residual compressive stresses build up. If the stable phase has a smaller volume than the initial phase, internal tensile stresses build up.
- the implantation of ions, atoms or molecules which lead to the development of printing properties, is conceivable. Material removal by sublimation and/or melting is conceivable. The removal of individual chemical components of a compound by supplying heat is conceivable.
- the coating 5 could outgas due to the supply of heat, for example, and in particular could lose water, oxygen or nitrogen compounds.
- the coating is an oxide, most preferably a native oxide.
- the enlargement C describes the compensation 7 of distortions 4 by the complete removal of the coating 5 and/or even the removal of parts of the substrate 1.
- the partial removal of the substrate 1 can also be carried out on the active substrate surface 1a, but is less there advantageous since the structures 2 could be damaged and/or soiled as a result.
- a partial removal of the substrate 1 at the passive substrate surface 1p can be removed in later method steps by a back-thinning process.
- the enlargement D describes the compensation 7 of distortions 4 by structuring the coating 5.
- the coating 5 is structured using a lithography process.
- the structuring is preferably carried out using imprint lithography.
- the material of the coating is preferably a polymer.
- the use of maskless photolithography is also conceivable.
- a device with at least one SLM, in particular a DMD is used.
- the structuring changes the effect of the internal stresses of the coating 5 on the underlying substrate and thus allows the compensation 7 of the distortions 4.
- FIG. 3 shows a side view of a substrate 1 with global distortions.
- the global distortions are location-dependent distortions over the entire substrate 1 .
- actions can be generated in the areas of influence 6 (FIG. 4) which result in the desired compensations.
- the compensations then lead to the desired result, for example the undistorted substrate 1 (see FIG. 4).
- FIG. 4 shows the application of the method according to the invention, in that actions are generated in a targeted manner in the areas of influence 6 in order to generate deformations at the edges, so that the substrate 1 arches upwards at the edges.
- the curvature is exaggerated in the figure for the sake of clarity.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Wire Bonding (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2021/080376 WO2023078528A1 (de) | 2021-11-02 | 2021-11-02 | Verfahren und vorrichtung zur kompensation von verzerrungen |
CN202180102045.8A CN117882180A (zh) | 2021-11-02 | 2021-11-02 | 用于补偿变形的方法及装置 |
IL310422A IL310422A (en) | 2021-11-02 | 2021-11-02 | Method and device for compensating distortions |
TW111137149A TW202322292A (zh) | 2021-11-02 | 2022-09-30 | 用於補償變形之方法及裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/EP2021/080376 WO2023078528A1 (de) | 2021-11-02 | 2021-11-02 | Verfahren und vorrichtung zur kompensation von verzerrungen |
Publications (1)
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WO2023078528A1 true WO2023078528A1 (de) | 2023-05-11 |
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PCT/EP2021/080376 WO2023078528A1 (de) | 2021-11-02 | 2021-11-02 | Verfahren und vorrichtung zur kompensation von verzerrungen |
Country Status (4)
Country | Link |
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CN (1) | CN117882180A (de) |
IL (1) | IL310422A (de) |
TW (1) | TW202322292A (de) |
WO (1) | WO2023078528A1 (de) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090309191A1 (en) * | 2008-06-11 | 2009-12-17 | Infineon Technologies Ag | Semiconductor device |
WO2012079786A1 (de) | 2010-12-13 | 2012-06-21 | Ev Group E. Thallner Gmbh | Einrichtung, vorrichtung und verfahren zur ermittlung von ausrichtungsfehlern |
WO2012083978A1 (de) | 2010-12-20 | 2012-06-28 | Ev Group E. Thallner Gmbh | Aufnahmeeinrichtung zur halterung von wafern |
US20130082358A1 (en) * | 2010-03-05 | 2013-04-04 | Disco Corporation | Single crystal substrate with multilayer film, manufacturing method for single crystal substrate with multilayer film, and element manufacturing method |
EP3404698A1 (de) * | 2013-05-29 | 2018-11-21 | EV Group E. Thallner GmbH | Vorrichtung und verfahren zum bonden von substraten |
WO2021079786A1 (ja) | 2019-10-23 | 2021-04-29 | フクビ化学工業株式会社 | 繊維強化複合材およびその製造方法並びに樹脂成形品の製造方法 |
DE102020106768A1 (de) * | 2020-03-12 | 2021-09-16 | Institut Für Nanophotonik Göttingen E.V. | Verfahren zur umformenden Bearbeitung eines Trägersubstrates für ein optisches Funktionsbauteil |
-
2021
- 2021-11-02 WO PCT/EP2021/080376 patent/WO2023078528A1/de active Application Filing
- 2021-11-02 IL IL310422A patent/IL310422A/en unknown
- 2021-11-02 CN CN202180102045.8A patent/CN117882180A/zh active Pending
-
2022
- 2022-09-30 TW TW111137149A patent/TW202322292A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090309191A1 (en) * | 2008-06-11 | 2009-12-17 | Infineon Technologies Ag | Semiconductor device |
US20130082358A1 (en) * | 2010-03-05 | 2013-04-04 | Disco Corporation | Single crystal substrate with multilayer film, manufacturing method for single crystal substrate with multilayer film, and element manufacturing method |
WO2012079786A1 (de) | 2010-12-13 | 2012-06-21 | Ev Group E. Thallner Gmbh | Einrichtung, vorrichtung und verfahren zur ermittlung von ausrichtungsfehlern |
WO2012083978A1 (de) | 2010-12-20 | 2012-06-28 | Ev Group E. Thallner Gmbh | Aufnahmeeinrichtung zur halterung von wafern |
EP3404698A1 (de) * | 2013-05-29 | 2018-11-21 | EV Group E. Thallner GmbH | Vorrichtung und verfahren zum bonden von substraten |
WO2021079786A1 (ja) | 2019-10-23 | 2021-04-29 | フクビ化学工業株式会社 | 繊維強化複合材およびその製造方法並びに樹脂成形品の製造方法 |
DE102020106768A1 (de) * | 2020-03-12 | 2021-09-16 | Institut Für Nanophotonik Göttingen E.V. | Verfahren zur umformenden Bearbeitung eines Trägersubstrates für ein optisches Funktionsbauteil |
Also Published As
Publication number | Publication date |
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IL310422A (en) | 2024-03-01 |
TW202322292A (zh) | 2023-06-01 |
CN117882180A (zh) | 2024-04-12 |
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