WO2023060951A1 - 平面变压器和电源模块 - Google Patents

平面变压器和电源模块 Download PDF

Info

Publication number
WO2023060951A1
WO2023060951A1 PCT/CN2022/103459 CN2022103459W WO2023060951A1 WO 2023060951 A1 WO2023060951 A1 WO 2023060951A1 CN 2022103459 W CN2022103459 W CN 2022103459W WO 2023060951 A1 WO2023060951 A1 WO 2023060951A1
Authority
WO
WIPO (PCT)
Prior art keywords
dielectric
component
coil
planar transformer
dielectric layer
Prior art date
Application number
PCT/CN2022/103459
Other languages
English (en)
French (fr)
Inventor
余鹏
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Publication of WO2023060951A1 publication Critical patent/WO2023060951A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections

Definitions

  • the present application relates to the field of energy technology, and more specifically, to a planar transformer and a power module in the field of energy technology.
  • high-frequency transformer As the core component of switching power supply, high-frequency transformer often has a decisive influence on key indicators such as efficiency and power density of switching power supply. Therefore, it is necessary to conduct in-depth research on high-frequency transformer.
  • high-frequency transformers can be divided into wire-wound transformers and planar transformers.
  • the wire-wound transformer has the advantages of low cost and small DC resistance of the winding, etc., but the wire-wound transformer also has disadvantages such as low processing efficiency, poor performance consistency, and relatively large size.
  • planar transformers have the advantages of low height, small size, mass and rapid production, and good performance consistency.
  • the planar transformers in the related art also have the disadvantage of large leakage inductance.
  • the present application provides a planar transformer and a power module, which have small leakage inductance and volume, and low processing complexity.
  • the present application provides a planar transformer, which may include a first dielectric component, a second dielectric component, and a coil component, and the first dielectric component and the second dielectric component may be stacked.
  • the coil assembly may include at least one (that is, one or more) first coils and at least one (that is, one or more) second coils. Both at least one first coil and at least one second coil may be disposed on the first dielectric component.
  • the relative magnetic permeability of the second dielectric component may be greater than that of the first dielectric component.
  • the relative permeability refers to the ratio of the permeability of the medium (a physical quantity used to characterize the magnetic properties of the medium) to the vacuum permeability.
  • the relative magnetic permeability of the second dielectric component may refer to the ratio of the magnetic permeability of the second dielectric component to the vacuum magnetic permeability
  • the relative magnetic permeability of the first dielectric component may refer to the magnetic permeability of the first dielectric component and vacuum permeability ratio.
  • the second dielectric component can be called a high permeability (ie, relatively high permeability) medium component, so the first medium component can be called a low permeability (ie, relatively high permeability) medium component.
  • Relatively low permeability) media components Relatively low permeability media components.
  • the planar transformer provided by the present application reduces the magnetic flux that is not coupled by the second coil in the total magnetic flux generated by the first coil through the first dielectric component with relatively low permeability (that is, reduces the leakage flux of the first coil ), which increases the degree of coupling between the first coil and the second coil, thereby reducing the leakage inductance of the planar transformer.
  • the first dielectric component may include a first dielectric layer. Then, one or more first coils and one or more second coils are arranged on the first dielectric layer.
  • the first dielectric component may include multiple first dielectric layers, and each layer of the first dielectric layer may be stacked, that is, each layer of the first dielectric layer and the second dielectric component Cascading settings are possible.
  • One or more first coils can be arranged on one or more first dielectric layers in the multi-layer first dielectric layer, similarly, one or more second coils can also be arranged in the multi-layer first dielectric layer layer or layers on the first dielectric layer.
  • the single-side width (that is, the single-side width) of at least one first coil may be greater than 1.5 times the thickness of the first dielectric component (that is, the total thickness of all first dielectric layers in the first dielectric component). times.
  • the single side width of at least one second coil may also be greater than 1.5 times the thickness of the first dielectric component.
  • the above-mentioned second dielectric component may include at least one second dielectric layer. At least one second dielectric layer can be stacked.
  • the second dielectric layer is stacked with one or more first dielectric layers. If the second dielectric layer has multiple layers, then the multi-layer second dielectric layer is stacked, and the multi-layer second dielectric layer and one or more first dielectric layers are also stacked (that is, the first dielectric component and the second dielectric layer Component cascading settings).
  • the planar transformer provided in the present application may further include a third dielectric component.
  • the third medium component can be stacked with the first medium component and the second medium component, and the third medium component and the second medium component are respectively arranged on two sides of the first medium component.
  • the relative magnetic permeability of the third medium component may be greater than that of the first medium component. Therefore, relative to the first dielectric component, the third dielectric component may also be called a high permeability (ie, relatively high permeability) dielectric component.
  • the relative magnetic permeability of the third dielectric component may be equal to the relative magnetic permeability of the second dielectric component.
  • the third dielectric component may also include at least one third dielectric layer.
  • the third dielectric layer is stacked with one or more first dielectric layers. If the third dielectric layer has multiple layers, then the multi-layer third dielectric layer is stacked, and the multi-layer third dielectric layer and one or more first dielectric layers are also stacked (that is, the third dielectric component and the dielectric component first dielectric layer) one stack setting).
  • At least one second dielectric layer in the second dielectric component and at least one third dielectric layer in the third dielectric component can use nickel-zinc ferrite respectively.
  • at least one second dielectric layer and at least one third dielectric layer may also use other magnetic media such as manganese zinc ferrite as main components, which is not limited in this application.
  • the second dielectric layer may be provided with conductor lines (such as pads, etc.).
  • the third dielectric layer may also be provided with conductive lines such as pads.
  • pads may be provided on the outer surface of the second dielectric component and/or the third dielectric component. That is to say, only the outer surface of the second dielectric component may be provided with pads, and only the outer surface of the third dielectric component may be provided with pads, or the outer surface of the second dielectric component and the outer surface of the third dielectric component are respectively Pads are provided.
  • planar transformer provided in the present application may be made by a low-temperature co-fired ceramic process or a high-temperature co-fired ceramic process.
  • sintering processes can also be used, which is not limited in this application.
  • the planar transformer provided by the present application can realize the processing of the planar transformer through the pressing process and the sintering process, and the processing complexity is small.
  • the integration of the first dielectric component, the second dielectric component, the third dielectric component and the coil component is high, and the whole planar transformer is an integrated design with low height and small volume.
  • the present application provides a power module, which may include the planar transformer provided in the first aspect and any possible implementation manner thereof.
  • the power module may include a planar transformer and semiconductor devices.
  • planar transformer is used as a substrate carrier, and pads are provided on the planar transformer, and semiconductor devices can be soldered on the pads.
  • the semiconductor device may be a chip, a resistor, or a capacitor, which is not limited in this application.
  • the power module may also include other functional units, which is not limited in this application.
  • the power module may include a planar transformer, a semiconductor device, and a functional unit (such as a filter circuit that functions as a filter, etc.).
  • the functional unit is used as a substrate carrier
  • the planar transformer is used as an independent component
  • the planar transformer and the semiconductor device are respectively arranged on the functional unit
  • the planar transformer and the semiconductor device have a connection relationship.
  • the semiconductor device may also be a chip, a resistor, or a capacitor, etc., which is not limited in this embodiment of the present application.
  • the power module may also include other functional units, which is not limited in this embodiment of the present application.
  • FIG. 1 is a schematic structural diagram of a planar transformer in an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a planar transformer in an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a planar transformer in an embodiment of the present application.
  • Fig. 4 is the schematic diagram of the magnetic circuit model of planar transformer in the embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a power module in an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a planar transformer in an embodiment of the present application.
  • At least one (item) means one or more, and “multiple” means two or more.
  • “And/or” is used to describe the association relationship of associated objects, indicating that there can be three types of relationships, for example, “A and/or B” can mean: only A exists, only B exists, and A and B exist at the same time , where A and B can be singular or plural.
  • the character “/” generally indicates that the contextual objects are an “or” relationship.
  • At least one of the following” or similar expressions refer to any combination of these items, including any combination of single or plural items.
  • At least one item (piece) of a, b or c can mean: a, b, c, "a and b", “a and c", “b and c", or "a and b and c ", where a, b, c can be single or multiple.
  • the operating frequency of high-frequency transformers often exceeds the intermediate frequency (such as 10kHz), and can be used in switching power supplies with high switching frequencies to reduce the ripple of the output voltage of switching power supplies.
  • intermediate frequency such as 10kHz
  • high-frequency transformer often has a decisive impact on key indicators such as efficiency and power density of switching power supply. Therefore, it is necessary to conduct in-depth research on high-frequency transformers.
  • high-frequency transformers can be divided into wire-wound transformers and planar transformers.
  • the following introduces the wire-wound transformer and the planar transformer respectively:
  • a wound transformer includes a skeleton, a coil and a magnetic core.
  • the coil is wound on the skeleton, and the coil and the magnetic core can be assembled together.
  • the wire-wound transformer has the advantages of low cost and small DC resistance of the winding, but the wire-wound transformer also has disadvantages such as low processing efficiency, poor performance consistency, and relatively large size.
  • Planar transformers can be divided into printed circuit board (PCB) planar transformers (which can be called PCB planar transformers) and co-fired magnetic ceramic planar transformers.
  • PCB printed circuit board
  • the PCB planar transformer may include a printed circuit board (with a primary coil and a secondary coil) and a magnetic core (which may adopt an E-type structure or an RM-type structure, etc.) assembled as a whole.
  • PCB planar transformers have the advantages of low height, small size, mass and rapid production, and good performance consistency.
  • co-fired magnetic ceramic planar transformers generally include low temperature co-fired ceramics planar transformers (which can be called LTCC planar transformers) and high temperature co-fired ceramics planar transformers (high temperature co-fired ceramics) planar transformers (It can be called HTCC planar transformer).
  • LTCC planar transformers usually include a multilayer magnetic ceramic substrate printed with primary and secondary coils.
  • the multilayer ceramic substrate can be laminated and sintered at a temperature lower than 950°C. Since the magnetic ceramic substrate itself has a certain relative permeability, the LTCC planar transformer does not need to assemble an additional magnetic core, and the laminated and sintered ceramic substrate has the function of a high-frequency transformer. Therefore, compared to PCB planar transformers, LTCC planar transformers are lower in height and smaller in size.
  • the magnetic ceramic substrate between the primary coil and the secondary coil in the LTCC planar transformer has a certain relative permeability, the magnetic flux generated by the primary coil will pass between the primary winding and the secondary winding when the transformer is working.
  • the magnetic ceramic substrate between them causes the magnetic flux generated by the primary coil not to be coupled by the secondary coil, and the magnetic flux leakage of the primary coil is large. Therefore, the LTCC planar transformer has a problem of large leakage inductance.
  • an embodiment of the present invention provides a planar transformer.
  • the planar transformer 1 can include a dielectric component 11 (i.e. a first dielectric component), a dielectric component 12 (ie a second dielectric component) and a coil component 13, and the first dielectric component 11 and the second dielectric component 12 can be stacked set up.
  • a dielectric component 11 i.e. a first dielectric component
  • a dielectric component 12 ie a second dielectric component
  • a coil component 13 the first dielectric component 11 and the second dielectric component 12 can be stacked set up.
  • the coil assembly 13 may include at least one (that is, one or more) coil C (coil) 1 (that is, the first coil, which can be used as the primary coil of the planar transformer 1) and at least one (that is, one or more) The coil C2 (that is, the second coil, which can be used as the secondary coil of the planar transformer 1 ), and the coil C1 and the coil C2 are coupled by magnetic flux (that is, the coil C1 and the coil C2 have a magnetic flux coupling relationship). At least one coil C1 and at least one coil C2 are both disposed (eg, disposed by printing) on the first dielectric component 11 .
  • the relative magnetic permeability of the dielectric component 12 (which can be represented by ⁇ r2 ) can be greater than the relative magnetic permeability of the dielectric component 11 (which can be represented by ⁇ r1 ), that is, ⁇ r2 is greater than ⁇ r1 .
  • the dielectric component 12 can be called a high-permeability (ie relatively high permeability) medium component, so the medium component 11 can be called a low-permeability (ie relative permeability) low rate) media components.
  • the relative magnetic permeability refers to the ratio of the magnetic permeability of the medium (a physical quantity used to characterize the magnetic properties of the medium) and the vacuum permeability (which can be expressed by ⁇ 0 ).
  • the planar transformer provided in the embodiment of the present application reduces the magnetic flux that is not coupled by the coil C2 in the total magnetic flux generated by the coil C1 through the dielectric component 11 with a relatively low magnetic permeability (that is, reduces the leakage flux of the coil C1), The degree of coupling between the coil C1 and the coil C2 is improved, thereby reducing the leakage inductance of the planar transformer.
  • the dielectric component 11 may include a dielectric layer A (that is, the dielectric component 11 only includes a first dielectric layer). Then, one or more coils C1 and one or more coils C2 are arranged on the dielectric layer A.
  • the dielectric component 11 may include multiple dielectric layers A (that is, the number of layers of the dielectric layer A is multiple layers), and each layer of the dielectric layer A may be stacked, that is to say, each layer The dielectric layer A and the dielectric component 12 can be stacked.
  • One or more coils C1 can be arranged on one or more layers of dielectric layer A in the multilayer dielectric layer A, similarly, one or more coils C2 can also be arranged on one or more layers of dielectric layer A in the multilayer dielectric layer A layer A.
  • one or more coils C1 and one or more coils C2 may be arranged on the dielectric assembly 11 in the following manner:
  • Mode 1 one or more coils C1 are arranged on the dielectric layer A with an odd number (it can be all the dielectric layers A with an odd number), and the dielectric layer A with the serial number as coupling (it can be all the dielectric layers A with an even number) ) is provided with one or more coils C2.
  • one or more coils C1 are respectively arranged on the dielectric layer A with an odd number, and one or more coils C2 are not arranged on any of them.
  • One or more coils C2 are respectively arranged on the even-numbered dielectric layer A, and one or more coils C1 are not arranged.
  • Method 2 Assume that the dielectric layer A has an even number of layers (can be represented by N), and one or more coils C1 are respectively set on the dielectric layer A with the serial number N/2 and the dielectric layer A before the serial number N/2, and the serial number is N One or more coils C2 are respectively arranged on the dielectric layer A after /2.
  • one or more coils C1 are respectively arranged on the dielectric layer A with the serial number N/2 and the dielectric layer A before the serial number N/2, and one or more coils C2 are not provided.
  • One or more coils C2 are respectively arranged on the dielectric layer A after the serial number N/2, and one or more coils C1 are not arranged.
  • Mode 3 One or more coils C1 and one or more coils C2 are respectively arranged on each dielectric layer A.
  • the embodiment of the present application only provides several possible arrangements of the coil C1 and the coil C2.
  • the coil C1 and the coil C2 can also be arranged in other ways than the several methods provided by the embodiment of the present application.
  • the setting that is, the coil C1 and the coil C2 are not limited to the setting provided in the embodiment of the present application, is not limited in the embodiment of the present application.
  • the dielectric component 11 may be provided with four dielectric layers A.
  • the first dielectric layer A and the fourth dielectric layer A are respectively provided with one-turn coil C2, and the one-turn coil C2 provided on the first dielectric layer A and the one-turn coil C2 provided on the fourth dielectric layer A can be Connect between layers through through holes (such as end-to-end connection, that is, the one-turn coil C2 set on the first dielectric layer A is connected in series with the one-turn coil C2 set on the fourth dielectric layer A), and a 2-turn coil can be formed.
  • Coil C2 that is, the secondary coil is 2 turns).
  • the second dielectric layer A and the third dielectric layer A are respectively provided with 3-turn coil C1
  • the one-turn coil C1 provided on the second dielectric layer A and the one-turn coil C1 provided on the third dielectric layer A can be Connect between layers through through holes (such as end-to-end connection, that is, the one-turn coil C1 set on the second dielectric layer A is connected in series with the one-turn coil C1 set on the third dielectric layer A), and a 6-turn coil can be formed.
  • Coil C1 that is, the primary coil has 6 turns).
  • the single-side width of the coil C1 (that is, the width of the unilateral 3-turn coil C1 in the 6-turn coil C1) or the single-side width of the coil C2
  • the side width (that is, the width of the one-turn coil C2 on one side of the two-turn coil C2) can be greater than 1.5 times the thickness of the entire dielectric component 11 (that is, the total thickness of the four dielectric layers A, represented by a), that is, b>1.5 a.
  • the second layer of dielectric layer A and the third layer of dielectric layer A are respectively provided with one-turn coil C1 and one-turn coil C2, there is only one turn respectively, since the coil C1 and the coil C2 are in the shape of a ring (in the length direction There are two unilaterals), then the single-sided width of the one-turn coil C1 or the one-turn coil C2 can also be greater than the thickness of the entire dielectric assembly 11 (that is, the total thickness of the four dielectric layers A).
  • the dielectric component 12 may include at least one dielectric layer B (that is, the dielectric component 12 may include one or more dielectric layers B).
  • the dielectric layer B is stacked with one or more dielectric layers A. If the dielectric layer B has multiple layers, then multiple dielectric layers B are stacked, and multiple dielectric layers B and one or more dielectric layers A are also stacked (that is, the dielectric component 12 and the dielectric component 11 are stacked).
  • the planar transformer 1 provided in the embodiment of the present application may further include a dielectric component 14 (that is, a third dielectric component), as shown in FIG. 2 and FIG. 3 .
  • the medium component 14 can be stacked with the medium component 11 and the medium component 12 , and the medium component 14 and the medium component 12 are arranged on both sides of the medium component 11 respectively.
  • the relative magnetic permeability of the dielectric component 14 may be represented by ⁇ r3 ) may be greater than the relative magnetic permeability ⁇ r1 of the dielectric component 11 , that is, ⁇ r3 is greater than ⁇ r1 .
  • the dielectric component 14 can also be called a high-permeability (ie, relatively high-permeability) medium component.
  • the relative permeability of the dielectric layer A in the dielectric component 11, the dielectric layer B in the dielectric component 12, and the dielectric layer D in the dielectric component 14 can be adjusted according to the application scenario of the planar transformer.
  • the adjustment method is not limited.
  • the relative magnetic permeability ⁇ r1 of the dielectric component 11 can be 10
  • the relative magnetic permeability ⁇ r2 of the dielectric component 12 and the relative magnetic permeability ⁇ r3 of the dielectric component 14 can be 500. It can be seen that ⁇ r2 and ⁇ r3 are much larger than ⁇ r1 .
  • the dielectric component 14 may also include at least one dielectric layer D (ie, the dielectric component 14 may include one or more dielectric layers D).
  • the dielectric layer D is stacked with one or more dielectric layers A. If the dielectric layer D has multiple layers, then multiple dielectric layers D are stacked, and multiple dielectric layers D and one or more dielectric layers A are also stacked (that is, the dielectric component 14 and the dielectric component 11 are stacked).
  • the dielectric layer B (one or more layers) can be a magnetic medium with main components such as nickel-zinc ferrite, manganese-zinc (MnZn) ferrite, or metal magnetic powder
  • the dielectric layer D (a layer or multiple layers) can also use nickel-zinc ferrite, manganese-zinc ferrite or metal magnetic powder as the main component of the magnetic medium.
  • the dielectric layer B and the dielectric layer D may also use other materials with higher relative magnetic permeability than the dielectric layer A, which is not limited in this embodiment of the present application.
  • the dielectric layer B may be provided with conductor lines (such as pads, etc.).
  • the dielectric layer D may also be provided with conductive lines such as pads.
  • pads may be provided on the outer surface of dielectric component 12 and/or dielectric component 14 .
  • only the outer surface of the dielectric component 12 may be provided with pads.
  • the pads can be arranged on the outer surface of the dielectric layer B. If the dielectric component 12 includes multiple dielectric layers B, the pads may be disposed on the outer surface of the outermost dielectric layer B in the dielectric component 12 .
  • only the outer surface of the dielectric component 14 may be provided with pads.
  • the pads can be disposed on the outer surface of the dielectric layer D. If the dielectric component 14 includes multiple dielectric layers D, the pads may be disposed on the outer surface of the outermost dielectric layer D in the dielectric component 14 .
  • the outer surfaces of the dielectric component 12 and the dielectric component 14 are respectively provided with pads.
  • the dielectric component 12 includes only one layer of dielectric layer B, and the dielectric component 14 includes only one layer of dielectric layer D, then pads are provided on the outer surface of the dielectric layer B and the outer surface of the dielectric layer D respectively. If multiple dielectric layers B are included in the dielectric assembly 12, and multiple dielectric layers D are included in the dielectric assembly 14, then the outer surface of the outermost dielectric layer B in the dielectric assembly 12 (i.e. the outer surface of the dielectric assembly 12) and Welding pads are provided on the outer surface of the outermost dielectric layer D in the dielectric component 14 (that is, the outer surface of the dielectric component 14 ).
  • pads or other types of conductor lines can be flexibly set according to the application scenarios of the planar transformer.
  • the multi-layer dielectric layers A in the dielectric component 11 can be stacked in the vertical direction, and the multi-layer dielectric layers B in the dielectric component 12 and the multi-layer dielectric layers in the dielectric component 14 D is stacked with multiple dielectric layers A respectively, and then all dielectric layers (including all dielectric layers A, all dielectric layers B, and all dielectric layers D) are laminated using a pressing process, and the application can be obtained by using a sintering process
  • the planar transformer provided by the embodiment.
  • the planar transformer provided in the embodiment of the present application can realize the processing of the planar transformer through the pressing process and the sintering process, and the processing complexity is small.
  • the three dielectric components namely, the dielectric component 11 , the dielectric component 12 and the dielectric component 14
  • the coil component 13 have a high degree of integration, and the entire planar transformer is an integrated design with a low height and a small volume.
  • planar transformer provided in the embodiment of the present application can adopt low temperature co-fired ceramics (low temperature co-fired ceramics, LTCC) process (ie LTCC process) or high temperature co-fired ceramics (high temperature co-fired ceramics, HTCC) process (That is, HTCC process) and other sintering processes.
  • LTCC low temperature co-fired ceramics
  • HTCC high temperature co-fired ceramics
  • other sintering processes can also be used, which is not limited in this embodiment of the present application.
  • the planar transformer provided in the embodiment of the present application may be called an LTCC planar transformer.
  • the dielectric layer B and dielectric layer D in the embodiment of the present application take nickel-zinc ferrite as an example, so the planar transformer provided in the embodiment of the present application can also be called low temperature co-fired ceramic ferrite (low temperature co-fired ceramic ferrite) ceramics ferrite, LTCF) planar transformer (ie LTCF planar transformer).
  • the transformer shown in FIG. 3 may be equivalent to the magnetic circuit model shown in FIG. 4 .
  • N represents the total number of turns of the coil C1
  • I is the current flowing through the coil C1.
  • Indicates the total magnetic flux generated by coil C1 represents the magnetic flux coupled by coil C2
  • R1 represents the magnetic flux Through the reluctance of the magnetic circuit
  • R2 represents the magnetic flux Reluctance through the magnetic circuit.
  • proportion K of the leakage flux can be expressed as:
  • the reluctance R1 passing through the magnetic circuit can be expressed as:
  • magnetic flux The reluctance R2 passing through the magnetic circuit can be expressed as:
  • Ae a can represent the magnetic flux The equivalent cross-sectional area in the magnetic circuit of all dielectric layers A.
  • Ae b can represent magnetic flux The equivalent cross-sectional area in the magnetic circuit of dielectric layer B and dielectric layer D.
  • Ae c can represent magnetic flux The equivalent cross-sectional area in the magnetic circuit of all dielectric layers A.
  • electromagnetic simulation can be performed on the planar transformer provided by the related art, and it can be obtained that the exciting inductance of the planar transformer provided by the related art is 64.7uH, the leakage inductance is 20.2uH, and the ratio of the leakage inductance to the exciting inductance (ie leakage Sensitivity) was 31.2%.
  • the relative permeability ⁇ r1 of the medium assembly 11 is 10
  • the relative permeability ⁇ r2 of the medium assembly 12 is 500
  • Electromagnetic simulation is performed on the planar transformer provided in the embodiment of the present application, and it can be obtained that the excitation inductance of the planar transformer provided in the embodiment of the application is 7.5uH
  • the leakage inductance is 0.5uH
  • the ratio of the leakage inductance to the excitation inductance is 6.7 %
  • the planar transformer provided by the embodiment of the present application has greatly reduced the leakage inductance without increasing the volume, and the leakage inductance rate has also been reduced from 31.2% in the related art to 6.7% of the application examples.
  • a power supply module (PSM) 1 may include a planar transformer 1 and a semiconductor device 2 .
  • planar transformer 1 is used as a substrate carrier, and a bonding pad (bonding pad, BP) is provided on the planar transformer 1, and the semiconductor device 2 can be soldered on the bonding pad.
  • bonding pad bonding pad, BP
  • the semiconductor device 2 may be a chip, a resistor, or a capacitor, which is not limited in this embodiment of the present application.
  • the power module SPM1 shown in FIG. 5 may include other functional units besides the planar transformer 1 and the semiconductor device 2 , which is not limited in the embodiment of the present application.
  • the embodiment of the present application also provides another power module, as shown in FIG. 6 .
  • the power module PSM2 may include a planar transformer 1, a semiconductor device 2, and a functional unit 3 (such as a filter circuit that functions as a filter, etc.).
  • the functional unit 3 serves as a substrate carrier
  • the planar transformer 1 serves as an independent component
  • the planar transformer 1 and the semiconductor device 2 are respectively arranged on the functional unit 3, and the planar transformer 1 and the semiconductor device 2 have a connection relationship.
  • the semiconductor device 2 in FIG. 6 may also be a chip, a resistor, or a capacitor, which is not limited in this embodiment of the present application.
  • the power module SPM2 shown in FIG. 6 may include other functional units besides the planar transformer 1, the semiconductor device 2 and the filter circuit and other functional units, which is not limited in the embodiment of the present application.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

本申请提供了一种平面变压器和电源模块，将不同相对磁导率的第一介质组件和第二介质组件层叠设置，减小了原边线圈的漏磁通，提高了原边线圈与副边线圈的耦合度，进而减小了变压器的漏感。本申请提供的平面变压器包括线圈组件以及层叠设置的第一介质组件和第二介质组件。其中，线圈组件包括原边线圈和副边线圈，原边线圈和副边线圈均设置在第一介质组件上，且第二介质组件的相对磁导率可以大于第一介质组件的相对磁导率。

Description

平面变压器和电源模块
本申请要求于2021年10月13日提交中国专利局、申请号为202111190502.1、申请名称为“平面变压器和电源模块”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及能源技术领域，并且更具体地，涉及能源技术领域中的一种平面变压器和电源模块。
背景技术
作为开关电源的核心部件，高频变压器对开关电源的效率、功率密度等关键指标往往有着决定性的影响，因此，有必要对高频变压器进行深入研究。
按照结构类型，高频变压器可以分为绕线变压器和平面变压器。其中，绕线变压器具有成本低、绕组的直流电阻小等优点，但是绕线变压器还存在加工效率低、性能一致性差以及尺寸比较大等缺点。与绕线变压器相比，平面变压器具有高度低、体积小、可海量快速生产以及性能一致性好等优点，但是相关技术中的平面变压器还存在漏感较大的缺点。
因此，亟需一种漏感较小的平面变压器。
发明内容
本申请提供一种平面变压器和电源模块，漏感和体积均较小，而且加工复杂度低。
第一方面，本申请提供一种平面变压器，可以包括第一介质组件、第二介质组件和线圈组件，第一介质组件和所述第二介质组件可以层叠设置。
其中，线圈组件可以包括至少一个(即一个或多个)第一线圈和至少一个(即一个或多个)第二线圈。至少一个第一线圈和至少一个第二线圈均可以设置在第一介质组件上。
可选的，第二介质组件的相对磁导率可以大于第一介质组件的相对磁导率。
需要解释的是，相对磁导率是指介质的磁导率(用于表征介质的磁性的物理量)和真空磁导率的比值。于是，第二介质组件的相对磁导率可以是指第二介质组件的磁导率和真空磁导率的比值，第一介质组件的相对磁导率可以是指第一介质组件的磁导率和真空磁导率的比值。
所以，相对于第一介质组件来说，第二介质组件可以叫作高磁导率(即相对磁导率较高)的介质组件，于是，第一介质组件可以叫作低磁导率(即相对磁导率较低)的介质组件。
本申请提供的平面变压器通过相对磁导率较低的第一介质组件减小第一线圈产生的总磁通中没有被第二线圈耦合的磁通(即减小了第一线圈的漏磁通)，提高了第一线圈与第二线圈的耦合度，进而减小了平面变压器的漏感。
在一种可能的实现方式中，第一介质组件可以包括一层第一介质层。于是，一个或多个第一线圈和一个或多个第二线圈均设置在该第一介质层上。
在另一种可能的实现方式中，第一介质组件可以包括多层第一介质层，每一层第一介质层可以层叠设置，也就是说，每一层第一介质层与第二介质组件可以层叠设置。一个或多个第一线圈可以设置在多层第一介质层中一层或多层第一介质层上，类似的，一个或多个第二线圈也可以设置在多层第一介质层中一层或多层第一介质层上。
在一种可能的实现方式中，至少一个第一线圈的单边宽度(即单侧宽度)可以大于第一介质组件的厚度(即第一介质组件中所有第一介质层的总厚度)的1.5倍。至少一个第二线圈的单边宽度也可以大于第一介质组件的厚度的1.5倍。
进一步地，上述第二介质组件可以包括至少一层第二介质层。至少一层第二介质层可以层叠设置。
可选的，若第二介质层仅有一层，那么该层第二介质层与一层或多层第一介质层层叠设置。若第二介质层有多层，那么多层第二介质层层叠设置，且多层第二介质层与一层或多层第一介质层也层叠设置(也就是第一介质组件和第二介质组件层叠设置)。
在一种可能的实现港式中，本申请提供的平面变压器还可以包括第三介质组件。第三介质组件可以与第一介质组件和第二介质组件层叠设置，且第三介质组件和第二介质组件分别设置于第一介质组件的两侧。
可选的，第三介质组件的相对磁导率可以大于第一介质组件的相对磁导率。所以，相对于第一介质组件来说，第三介质组件也可以叫作高磁导率(即相对磁导率较高)的介质组件。
进一步地，第三介质组件的相对磁导率可以与第二介质组件的相对磁导率相等。
与第二介质组件类似，第三介质组件也可以包括至少一层第三介质层。
可选的，若第三介质层仅有一层，那么该层第三介质层与一层或多层第一介质层层叠设置。若第三介质层有多层，那么多层第三介质层层叠设置，且多层第三介质层与一层或多层第一介质层也层叠设置(也就是第三介质组件和介质组件第一层叠设置)。
在一种可能的实现方式中，第二介质组件中至少一层第二介质层和第三介质组件中的 至少一层第三介质层分别可以采用镍锌铁氧体。当然，至少一层第二介质层和至少一层第三介质层也可以采用锰锌铁氧体等其他磁性介质作为主要成分，本申请对此不做限定。
进一步地，第二介质层(一层或多层)可以设有导体线路(如焊盘等)。类似的，第三介质层(一层或多层)也可以设有焊盘等导体线路。例如，可以将焊盘设置在第二介质组件和/或第三介质组件的外表面。也就是说，可以只有第二介质组件的外表面设有焊盘，也可以只有第三介质组件的外表面设有焊盘，或者第二介质组件的外表面和第三介质组件的外表面分别设有焊盘。
在一种可能的实现方式中，本申请提供的平面变压器可以采用低温共烧陶瓷工艺或者高温共烧陶瓷工艺制成。当然，还可以采用其他烧结工艺制成，本申请对此不做限定。
本申请提供的平面变压器通过压合工艺和烧结工艺即可实现平面变压器的加工，加工复杂度小。另外，第一介质组件、第二介质组件和第三介质组件和线圈组件的集成度高，整个平面变压器为一体化设计，高度低，且体积小。
第二方面，本申请提供一种电源模块，可以包括上述第一方面及其任一可能的实现方式提供的平面变压器。
在一个示例中，电源模块可以包括平面变压器和半导体器件。
其中，平面变压器作为基板载体，平面变压器上设有焊盘，半导体器件可以焊接在焊盘上。
可选的，半导体器件可以为芯片、电阻或者电容等，本申请对此不做限定。
需要说明的是，电源模块除了包括平面变压器和半导体器件，还可以包括其他功能单元，本申请对此不做限定。
在另一示例中，电源模块可以包括平面变压器、半导体器件和功能单元(如起到滤波作用的滤波电路等)。
其中，功能单元作为基板载体，平面变压器作为独立部件，平面变压器和半导体器件分别设置在功能单元上，平面变压器和半导体器件具有连接关系。
类似的，半导体器件也可以为芯片、电阻或者电容等，本申请实施例对此不做限定。
同样需要说明的是，电源模块除了包括平面变压器、半导体器件以及滤波电路等功能单元，还可以包括其他功能单元，本申请实施例对此也不做限定。
应当理解的是，本申请的第二方面与本申请的第一方面的技术方案一致，各方面及对应的可能的实现方式所取得的有益效果相似，不再赘述。
附图说明
图1是本申请实施例中平面变压器的一种示意性结构图；
图2是本申请实施例中平面变压器的一种示意性结构图；
图3是本申请实施例中平面变压器的一种示意性结构图；
图4是本申请实施例中平面变压器的磁路模型示意图；
图5是本申请实施例中电源模块的一种示意性结构图；
图6是本申请实施例中平面变压器一种示意性结构图。
具体实施方式
下面将结合附图，对本申请中的技术方案进行描述。
为使本申请的目的、技术方案和优点更加清楚，下面将结合本申请中的附图，对本申请中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请的说明书实施例和权利要求书及附图中的术语“第一”、“第二”等仅用于区分描述的目的，而不能理解为指示或暗示相对重要性，也不能理解为指示或暗示顺序。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元。方法、***、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
应当理解，在本申请中，“至少一个(项)”是指一个或者多个，“多个”是指两个或两个以上。“和/或”，用于描述关联对象的关联关系，表示可以存在三种关系，例如，“A和/或B”可以表示：只存在A，只存在B以及同时存在A和B三种情况，其中A，B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。“以下至少一项(个)”或其类似表达，是指这些项中的任意组合，包括单项(个)或复数项(个)的任意组合。例如，a，b或c中的至少一项(个)，可以表示：a，b，c，“a和b”，“a和c”，“b和c”，或“a和b和c”，其中a，b，c可以是单个，也可以是多个。
高频变压器的工作频率往往超过中频(如10kHz)，可以用在开关频率较高的开关电源中，减小开关电源输出电压的纹波。高频变压器作为开关电源的核心部件，其对开关电源的效率、功率密度等关键指标往往有着决定性的影响，因此，有必要对高频变压器进行深入研究。
按照结构类型，高频变压器可以分为绕线变压器和平面变压器。下面对绕线变压器和平面变压器分别进行介绍：
(1)绕线变压器包括骨架、线圈和磁芯。线圈绕制于骨架上，同时线圈与磁芯可以 配套组装。绕线变压器具有成本低、绕组的直流电阻小等优点，但是绕线变压器还存在加工效率低、性能一致性差以及尺寸比较大等缺点。
(2)平面变压器可以分为印刷电路板(printed circuit board，PCB)平面变压器(可以称为PCB平面变压器)和共烧磁性陶瓷平面变压器。
其中，PCB平面变压器可以包括配套组装的印刷电路板(带有原边线圈和副边线圈)和磁芯(可以采用E型结构或者RM型结构等)。PCB平面变压器具有高度低、体积小、可海量快速生产以及性能一致性好等优点。
其中，共烧磁性陶瓷平面变压器一般可以包括低温共烧陶瓷(low temperature co-fired ceramics)平面变压器(可以称为LTCC平面变压器)和高温共烧陶瓷平面变压器(high temperature co-fired ceramics)平面变压器(可以称为HTCC平面变压器)。
下面以LTCC平面变压器为例说明。LTCC的平面变压器通常包括印刷有原边线圈和副边线圈的多层具有磁性的陶瓷基板。多层陶瓷基板可以经过叠压，在低于950℃的温度下烧结而成。由于磁性陶瓷基板本身具有一定的相对磁导率，因此LTCC平面变压器不需要组装额外的磁芯，叠压烧结后的陶瓷基板即具备高频变压器的功能。因此，相比PCB平面变压器，LTCC平面变压器的高度更低，且体积更小。
同时，由于LTCC平面变压器中原边线圈和副边线圈之间的磁性陶瓷基板具有一定的相对磁导率，所以在变压器工作时，原边线圈产生的磁通会经过原边绕组和副边绕组之间的磁性陶瓷基板，导致原边线圈产生的磁通不被副边线圈耦合，原边线圈的漏磁较大，因此，LTCC平面变压器存在漏感较大的问题。
为了克服LTCC平面变压器或HTCC平面变压器存在的漏感较大的问题，本发明实施例提供了一种平面变压器。
如图1所示，平面变压器1可以包括介质组件11(即第一介质组件)、介质组件12(即第二介质组件)和线圈组件13，第一介质组件11和第二介质组件12可以层叠设置。
可选的，线圈组件13可以包括至少一个(即一个或多个)线圈C(coil)1(即第一线圈，可以作为平面变压器1的原边线圈)和至少一个(即一个或多个)线圈C2(即第二线圈，可以作为平面变压器1的副边线圈)，线圈C1和线圈C2之间通过磁通耦合(即线圈C1和线圈C2之间具有磁通耦合关系)。至少一个线圈C1和至少一个线圈C2均设置(如通过印刷的形式设置)在第一介质组件11上。
可选的，介质组件12的相对磁导率(可以用μ r2表示)可以大于介质组件11的相对磁导率(可以用μ r1表示)，也就是μ r2大于μ r1。
所以，相对于介质组件11来说，介质组件12可以叫作高磁导率(即相对磁导率较高)的介质组件，于是，介质组件11可以叫作低磁导率(即相对磁导率较低)的介质组件。
如上文所述，相对磁导率是指介质的磁导率(用于表征介质的磁性的物理量)和真空磁导率(可以用μ 0表示)的比值。
于是，介质组件12的相对磁导率μ r2可以为介质组件12的磁导率(可以用μ 2表示)与真空磁导率μ 0的比值，即μ r2＝μ 2/μ 0。
类似的，介质组件11的相对磁导率μ r1可以为介质组件11的磁导率(可以用μ 1表示)与真空磁导率μ 0的比值，即μ r1＝μ 1/μ 0。
本申请实施例提供的平面变压器通过相对磁导率较低的介质组件11减小线圈C1产生的总磁通中没有被线圈C2耦合的磁通(即减小了线圈C1的漏磁通)，提高了线圈C1与线圈C2的耦合度，进而减小了平面变压器的漏感。
在一种可能的实现方式中，介质组件11可以包括一层介质层A(即介质组件11仅包括一层第一介质层)。于是，一个或多个线圈C1和一个或多个线圈C2均设置在该介质层A上。
在另一种可能的实现方式中，介质组件11可以包括多层介质层A(即介质层A的层数为多层)，每一层介质层A可以层叠设置，也就是说，每一层介质层A与介质组件12可以层叠设置。一个或多个线圈C1可以设置在多层介质层A中一层或多层介质层A上，类似的，一个或多个线圈C2也可以设置在多层介质层A中一层或多层介质层A上。
可选的，一个或多个线圈C1以及一个或多个线圈C2可以按照如下方式设置在介质组件11上：
方式一：序号为奇数的介质层A(可以是所有序号为奇数的介质层A)上设置有一个或多个线圈C1，序号为耦合的介质层A(可以是所有序号为偶数的介质层A)上设置有一个或多个线圈C2。
也就是说，序号为奇数的介质层A上分别设置有一个或多个线圈C1，且都未设置一个或多个线圈C2。序号为偶数的介质层A上分别设置有一个或多个线圈C2，且都未设置一个或多个线圈C1。
方式二：设介质层A共有偶数层(可以用N表示)，序号为N/2的介质层A以及序号为N/2之前的介质层A上分别设置一个或多个线圈C1，序号为N/2之后的介质层A上分别设置一个或多个线圈C2。
也就是说，序号为N/2的介质层A以及序号为N/2之前的介质层A上分别设置一个或多个线圈C1，且都未设置一个或多个线圈C2。序号为N/2之后的介质层A上分别设置一个或多个线圈C2，且都未设置一个或多个线圈C1。
方式三：每一层介质层A上分别设置一个或多个线圈C1以及一个或多个线圈C2。
需要说明的是，本申请实施例仅提供了线圈C1和线圈C2的几种可能的设置方式， 当然，线圈C1和线圈C2还可以通过除本申请实施例提供的几种方式之外的其他方式设置(即线圈C1和线圈C2不局限于本申请实施例提供的设置方式)，本申请实施例对此不做限定。
在一示例中，如图2所示，介质组件11可以设置4层介质层A。
其中，第一层介质层A和第四层介质层A分别设置一匝线圈C2，第一层介质层A上设置的一匝线圈C2和第四层介质层A上设置的一匝线圈C2可以通过通孔在层间连接(如首尾连接，即第一层介质层A上设置的一匝线圈C2与第四层介质层A上设置的一匝线圈C2串联)，即可形成一个2匝的线圈C2(即副边线圈为2匝)。
其中，第二层介质层A和第三层介质层A分别设置3匝线圈C1，第二层介质层A上设置的一匝线圈C1和第三层介质层A上设置的一匝线圈C1可以通过通孔在层间连接(如首尾连接，即第二层介质层A上设置的一匝线圈C1与第三层介质层A上设置的一匝线圈C1串联)，即可形成一个6匝的线圈C1(即原边线圈为6匝)。
进一步地，继续参考图2，由于线圈C1为6匝，线圈C2为2匝，所以线圈C1的单边宽度(即6匝线圈C1中单边的3匝线圈C1的宽度)或线圈C2的单边宽度(即2匝线圈C2中单边的1匝线圈C2的宽度)可以大于整个介质组件11的厚度(即四层介质层A的总厚度，用a表示)的1.5倍，即b>1.5a。
需要说明的是，如果第二层介质层A和第三层介质层A分别设置一匝线圈C1和一匝线圈C2分别只有一匝，由于线圈C1和线圈C2是圆环形状(在长度方向上有两个单边)，那么该一匝的线圈C1或者该一匝的线圈C2的单边宽度也可以大于整个介质组件11的厚度(即四层介质层A的总厚度)。
在一种可能的实现方式中，介质组件12可以包括至少一层介质层B(即介质组件12可以包括一层或多层介质层B)。
可选的，若介质层B仅有一层，那么该层介质层B与一层或多层介质层A层叠设置。若介质层B有多层，那么多层介质层B层叠设置，且多层介质层B与一层或多层介质层A也层叠设置(也就是介质组件12和介质组件11层叠设置)。
本申请实施例提供的平面变压器1还可以包括介质组件14(即第三介质组件)，如图2和图3所示。介质组件14可以与介质组件11和介质组件12层叠设置，且介质组件14和介质组件12分别设置于介质组件11的两侧。
可选的，介质组件14的相对磁导率(可以用μ r3表示)可以大于介质组件11的相对磁导率μ r1，也就是μ r3大于μ r1。
所以，相对于介质组件11来说，介质组件14也可以叫作高磁导率(即相对磁导率较高)的介质组件。
在一示例中，介质组件14的相对磁导率μ r3可以与介质组件12的相对磁导率μ r2相等，也就是μ r3＝μ r2。
需要说明的是，介质组件11中的介质层A、介质组件12中的介质层B以及介质组件14中的介质层D的相对磁导率可以根据平面变压器的应用场景进行调整，本申请实施例对调整方式不做限定。
示例性的，介质组件11的相对磁导率μ r1可以为10，介质组件12的相对磁导率μ r2和介质组件14的相对磁导率μ r3可以为500。可以看出，μ r2和μ r3远大于μ r1。
与介质组件12类似，介质组件14也可以包括至少一层介质层D(即介质组件14可以包括一层或多层介质层D)。
可选的，若介质层D仅有一层，那么该层介质层D与一层或多层介质层A层叠设置。若介质层D有多层，那么多层介质层D层叠设置，且多层介质层D与一层或多层介质层A也层叠设置(也就是介质组件14和介质组件11层叠设置)。
在一种可能的实现方式中，介质层B(一层或多层)可以采用镍锌铁氧体、锰锌(MnZn)铁氧体或者金属磁粉等主要成分的磁性介质，介质层D(一层或多层)也可以分别采用镍锌铁氧体、锰锌铁氧体或者金属磁粉等作为主要成分的磁性介质。当然，介质层B和介质层D也可以采用其他相对磁导率大于介质层A的材质，本申请实施例对此不做限定。
进一步地，介质层B(一层或多层)可以设有导体线路(如焊盘等)。类似的，介质层D(一层或多层)也可以设有焊盘等导体线路。例如，可以将焊盘设置在介质组件12和/或介质组件14的外表面。
例如，可以只有介质组件12的外表面设有焊盘。
如果介质组件12中仅包括一层介质层B，那么焊盘可以设置在该介质层B的外表面。如果介质组件12中包括多层介质层B，那么焊盘可以设置在介质组件12中最外层的介质层B的外表面。
又例如，可以只有介质组件14的外表面设有焊盘。
如果介质组件14中仅包括一层介质层D，那么焊盘可以设置在该介质层D的外表面。如果介质组件14中包括多层介质层D，那么焊盘可以设置在介质组件14中最外层的介质层D的外表面。
还例如，介质组件12的外表面和介质组件14的外表面分别设有焊盘。
如果介质组件12中仅包括一层介质层B，且介质组件14中仅包括一层介质层D，那么在该介质层B的外表面和该介质层D的外表面分别设置焊盘。如果介质组件12中包括多层介质层B，且介质组件14中包括多层介质层D，那么在介质组件12中最外层的介质层B的外表面(即介质组件12的外表面)和介质组件14中最外层的介质层D的外表面 (即介质组件14的外表面)分别设置焊盘。
当然，可以根据平面变压器的应用场景灵活设置焊盘或者其他类型的导体线路。
在一种可能的实现方式中，可以在垂直方向上将介质组件11中的多层介质层A层叠放置，并将介质组件12中的多层介质层B和介质组件14中的多层介质层D分别与多层介质层A层叠放置，之后采用压合工艺将所有介质层(包括所有介质层A、所有介质层B和所有介质层D)进行压合，并采用烧结工艺即可得到本申请实施例提供的平面变压器。
本申请实施例提供的平面变压器通过压合工艺和烧结工艺即可实现平面变压器的加工，加工复杂度小。另外，三个介质组件(即介质组件11、介质组件12和介质组件14)和线圈组件13的集成度高，整个平面变压器为一体化设计，高度低，且体积小。
进一步地，本申请实施例提供的平面变压器可以采用低温共烧陶瓷(low temperature co-fired ceramics，LTCC)工艺(即LTCC工艺)或者高温共烧陶瓷(high temperature co-fired ceramics，HTCC)工艺(即HTCC工艺)等烧结工艺制成。当然，还可以采用其他烧结工艺制成，本申请实施例对此不做限定。
本申请实施例是以低温共烧陶瓷工艺为例进行说明的，因此，本申请实施例提供的平面变压器可以称为LTCC平面变压器。同时，本申请实施例中的介质层B和介质层D以镍锌铁氧体为例，所以本申请实施例提供的平面变压器又可以称为低温共烧陶瓷铁氧体(low temperature co-fired ceramics ferrite，LTCF)平面变压器(即LTCF平面变压器)。
在一种可能的实现方式中，图3所示的变压器可以等效为图4所示的磁路模型。图4中，F表示一个或多个线圈C1产生的磁动势，且满足F＝NI，其中，N表示线圈C1的总匝数，I为流经线圈C1的电流。
Figure PCTCN2022103459-appb-000001
表示线圈C1产生的总磁通，
Figure PCTCN2022103459-appb-000002
表示被线圈C2耦合的磁通，且
Figure PCTCN2022103459-appb-000003
R1表示磁通
Figure PCTCN2022103459-appb-000004
经过磁路的磁阻，
Figure PCTCN2022103459-appb-000005
表示没有被线圈C2耦合的磁通(即线圈C1的漏磁通)，且
Figure PCTCN2022103459-appb-000006
R2表示磁通
Figure PCTCN2022103459-appb-000007
经过磁路的磁阻。R表示总磁通
Figure PCTCN2022103459-appb-000008
的总磁阻，且R＝R1//R2。
可选的，漏磁通的占比K可以用公式表示为：
Figure PCTCN2022103459-appb-000009
由于介质组件14的相对磁导率μ r3可以与介质组件12的相对磁导率μ r2相等，可以设定μ r3＝μ r2＝μ r。于是，根据介质组件11的相对磁导率μ r1、介质组件12和介质组件14的相对磁导率μ r和真空磁导率μ 0，并结合线圈C1或线圈C2的单边宽度b以及介质组件11的厚度a，磁通
Figure PCTCN2022103459-appb-000010
经过磁路的磁阻R1可以用公式表示为：
R1＝2b/(μ 0·μ r1·Ae b)+2a(μ 0·μ r·Ae a)         (2)
类似的，磁通
Figure PCTCN2022103459-appb-000011
经过磁路的磁阻R2可以用公式表示为：
R2＝2b/(μ 0·μ r1·Ae c)      (3)
公式(2)和公式(3)中，Ae a可以表示磁通
Figure PCTCN2022103459-appb-000012
在所有介质层A的磁路中的等效截面积。Ae b可以表示磁通
Figure PCTCN2022103459-appb-000013
在介质层B和介质层D的磁路中的等效截面积。Ae c可以表示磁通
Figure PCTCN2022103459-appb-000014
在所有介质层A的磁路中的等效截面积。
需要说明的是，为了简化分析过程，直观说明本发明实施例提供的平面变压器的漏感小，可以设定Ae a＝Ae b＝Ae c。
在一种示例中，结合公式(1)、公式(2)和公式(3)，也就是将公式(2)和公式(3)代入公式(1)，即可得到：
Figure PCTCN2022103459-appb-000015
从上述公式(4)可以看出，漏磁通的占比K与
Figure PCTCN2022103459-appb-000016
成正比关系。于是，当
Figure PCTCN2022103459-appb-000017
越小，漏磁通的占比K就会越小，磁通
Figure PCTCN2022103459-appb-000018
会越小，进而平面变压器的漏感就会越小。
在另一种示例中，结合公式(1)、公式(2)和公式(3)，还可以得到：
Figure PCTCN2022103459-appb-000019
从上述公式(5)可以看出，漏磁通的占比K与
Figure PCTCN2022103459-appb-000020
成正比关系。于是，当
Figure PCTCN2022103459-appb-000021
越小，漏磁通的占比K就会越小，磁通
Figure PCTCN2022103459-appb-000022
会越小，进而平面变压器的漏感就会越小。
在再一种示例中，可以对相关技术提供的平面变压器进行电磁仿真，可以得到相关技术提供的平面变压器的励磁电感为64.7uH，漏感为20.2uH，漏感占励磁电感的比例(即漏感率)为31.2％。还可以在介质组件11的相对磁导率μ r1取10、介质组件12的相对磁导率μ r2取500、介质组件14的相对磁导率μ r3取500以及b＝1.5a的基础上，对本申请实施例提供的平面变压器进行电磁仿真，可以得到本申请实施例提供的平面变压器的励磁电感为7.5uH，漏感为0.5uH，漏感占励磁电感的比例(即漏感率)为6.7％，如表1：
表1
  励磁电感 漏感 漏感占励磁电感的比例
相关技术 64.7 20.2 31.2％
本申请实施例 7.5 0.5 6.7％
从表1可以看出，与相关技术相比，本申请实施例提供的平面变压器在不增加体积的情况下，大幅度降低了的漏感，漏感率也由相关技术中的31.2％降低到本申请实施例的6.7％。
本申请实施例提供一种电源模块，如图5所示。电源模块(power supply module，PSM)1可以包括平面变压器1和半导体器件2。
其中，平面变压器1作为基板载体，平面变压器1上设有焊盘(bonding pad，BP)，半导体器件2可以焊接在焊盘上。
在一种可能的实现方式中，半导体器件2可以为芯片、电阻或者电容等，本申请实施例对此不做限定。
需要说明的是，图5所示的电源模块SPM1除了包括平面变压器1和半导体器件2，还可以包括其他功能单元，本申请实施例对此不做限定。
本申请实施例还提供另一种电源模块，如图6所示。电源模块PSM2可以包括平面变压器1、半导体器件2和功能单元3(如起到滤波作用的滤波电路等)。
功能单元3作为基板载体，平面变压器1作为独立部件，平面变压器1和半导体器件2分别设置在功能单元3上，平面变压器1和半导体器件2具有连接关系。
类似的，图6中的半导体器件2也可以为芯片、电阻或者电容等，本申请实施例对此不做限定。
同样需要说明的是，图6所示的电源模块SPM2除了包括平面变压器1、半导体器件2以及滤波电路等功能单元3，还可以包括其他功能单元，本申请实施例对此也不做限定。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应所述以权利要求的保护范围为准。

Claims (13)

  1. 一种平面变压器，其特征在于，包括第一介质组件、第二介质组件和线圈组件；
    所述第一介质组件和所述第二介质组件层叠设置；
    所述线圈组件包括至少一个第一线圈和至少一个第二线圈，所述至少一个第一线圈和所述至少一个第二线圈均设置在所述第一介质组件上；
    所述第二介质组件的相对磁导率大于所述第一介质组件的相对磁导率。
  2. 根据权利要求1所述的平面变压器，其特征在于，所述至少一个第一线圈的单边宽度或所述至少一个第二线圈的单边宽度大于所述第一介质组件的厚度的1.5倍。
  3. 根据权利要求1或2所述的平面变压器，其特征在于，所述第一介质组件包括一层第一介质层；
    所述至少一个第一线圈和所述至少一个第二线圈设置在所述第一介质层上。
  4. 根据权利要求1或2所述的平面变压器，其特征在于，所述第一介质组件包括多层第一介质层，所述多层第一介质层中的每一层第一介质层层叠设置；
    所述至少一个第一线圈设置所述多层第一介质层中至少一层第一介质层上，所述至少一个第二线圈设置所述多层第一介质层中至少一层第一介质层上。
  5. 根据权利要求1至4中任一项所述的平面变压器，其特征在于，所述第二介质组件包括至少一层第二介质层；
    所述至少一层第二介质层层叠设置。
  6. 根据权利要求1至5中任一项所述的平面变压器，其特征在于，所述平面变压器还包括第三介质组件；
    所述第三介质组件与所述第一介质组件层叠设置，且所述第三介质组件和所述第二介质组件分别设置于所述第一介质组件的两侧。
  7. 根据权利要求6所述的平面变压器，其特征在于，所述第三介质组件的相对磁导率大于所述第一介质组件的相对磁导率。
  8. 根据权利要求6或7所述的平面变压器，其特征在于，所述第三介质组件的相对磁导率与所述第二介质组件的相对磁导率相等。
  9. 根据权利要求6至8中任一项所述的平面变压器，其特征在于，所述第三介质组件包括至少一层第三介质层；
    所述至少一层第三介质层层叠设置。
  10. 根据权利要求5至8中任一项所述的平面变压器，其特征在于，所述第二介质组件中至少一层第二介质层和所述第三介质组件中的至少一层第三介质层分别采用镍锌铁氧体。
  11. 根据权利要求6至10中任一项所述的平面变压器，其特征在于，所述第二介质组件和/或所述第三介质组件设有导体线路。
  12. 根据权利要求1至11中任一项所述的平面变压器，其特征在于，所述平面变压器采用低温共烧陶瓷工艺或者高温共烧陶瓷工艺制成。
  13. 一种电源模块，其特征在于，包括如权利1至12中任一项所述的平面变压器。
PCT/CN2022/103459 2021-10-13 2022-07-01 平面变压器和电源模块 WO2023060951A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202111190502.1 2021-10-13
CN202111190502.1A CN114093624A (zh) 2021-10-13 2021-10-13 平面变压器和电源模块

Publications (1)

Publication Number Publication Date
WO2023060951A1 true WO2023060951A1 (zh) 2023-04-20

Family

ID=80296749

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/103459 WO2023060951A1 (zh) 2021-10-13 2022-07-01 平面变压器和电源模块

Country Status (2)

Country Link
CN (1) CN114093624A (zh)
WO (1) WO2023060951A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114093624A (zh) * 2021-10-13 2022-02-25 华为技术有限公司 平面变压器和电源模块

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062197A (en) * 1988-12-27 1991-11-05 General Electric Company Dual-permeability core structure for use in high-frequency magnetic components
JPH0714716A (ja) * 1993-06-22 1995-01-17 Taiyo Yuden Co Ltd 積層セラミック磁性部品とその製造方法
JP2013055232A (ja) * 2011-09-05 2013-03-21 Murata Mfg Co Ltd 積層インダクタ
CN109524215A (zh) * 2018-12-29 2019-03-26 矽力杰半导体技术(杭州)有限公司 层叠变压器及其制造方法
CN111261392A (zh) * 2019-12-20 2020-06-09 南京矽力微电子技术有限公司 功率变压器及其制造方法
CN114093624A (zh) * 2021-10-13 2022-02-25 华为技术有限公司 平面变压器和电源模块

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062197A (en) * 1988-12-27 1991-11-05 General Electric Company Dual-permeability core structure for use in high-frequency magnetic components
JPH0714716A (ja) * 1993-06-22 1995-01-17 Taiyo Yuden Co Ltd 積層セラミック磁性部品とその製造方法
JP2013055232A (ja) * 2011-09-05 2013-03-21 Murata Mfg Co Ltd 積層インダクタ
CN109524215A (zh) * 2018-12-29 2019-03-26 矽力杰半导体技术(杭州)有限公司 层叠变压器及其制造方法
CN111261392A (zh) * 2019-12-20 2020-06-09 南京矽力微电子技术有限公司 功率变压器及其制造方法
CN114093624A (zh) * 2021-10-13 2022-02-25 华为技术有限公司 平面变压器和电源模块

Also Published As

Publication number Publication date
CN114093624A (zh) 2022-02-25

Similar Documents

Publication Publication Date Title
JP4973996B2 (ja) 積層電子部品
JP5459301B2 (ja) 高周波トランス、高周波部品および通信端末装置
CN208157197U (zh) 线圈内置部件
WO2013136936A1 (ja) コモンモードチョークコイル
CN207966623U (zh) 线圈内置部件
WO2012111203A1 (ja) 積層型インダクタ素子
US20070001795A1 (en) Inductor
JP2000114050A (ja) 低いプロファイルの表面取付チップ・インダクタ
WO2023060951A1 (zh) 平面变压器和电源模块
CN103617872B (zh) 基于pcb工艺制作的集成磁性元件的制作方法及集成led驱动电源
CN206259239U (zh) Pcb板变压器及其线圈板
CN110970210A (zh) 变压器
JP3545701B2 (ja) コモンモードチョーク
US8890646B2 (en) Laminated-type electronic component
CN102982968B (zh) 一种用于平面emi滤波器的平面集成emi扼流圈
JP5311462B2 (ja) 多層基板トランス
JP2010141191A (ja) インダクタおよびその製造方法
JP2005259774A (ja) 開磁路型積層コイル部品
JP5439797B2 (ja) ノイズフィルタ
JP5880697B2 (ja) 多チャンネル型ｄｃ−ｄｃコンバータ
CN208690086U (zh) 绕组结构与磁性元件
JPH05121241A (ja) インダクタンス部品およびその製造方法
KR20150105786A (ko) 적층형 전자부품 및 그 제조방법
JPH05121240A (ja) インダクタンス部品およびその製造方法
CN114743787B (zh) 可拆分ltcc平面变压器的制作方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22879898

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE