WO2023001162A1 - 电子设备 - Google Patents

电子设备 Download PDF

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Publication number
WO2023001162A1
WO2023001162A1 PCT/CN2022/106608 CN2022106608W WO2023001162A1 WO 2023001162 A1 WO2023001162 A1 WO 2023001162A1 CN 2022106608 W CN2022106608 W CN 2022106608W WO 2023001162 A1 WO2023001162 A1 WO 2023001162A1
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Prior art keywords
module
electronic device
power management
effect transistor
mode switching
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PCT/CN2022/106608
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English (en)
French (fr)
Inventor
祝文祥
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维沃移动通信有限公司
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Application filed by 维沃移动通信有限公司 filed Critical 维沃移动通信有限公司
Publication of WO2023001162A1 publication Critical patent/WO2023001162A1/zh

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J2207/00—Indexing scheme relating to details of circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J2207/20—Charging or discharging characterised by the power electronics converter
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present application belongs to the technical field of electronic equipment, and in particular relates to an electronic equipment.
  • the purpose of the embodiments of the present application is to provide an electronic device that can solve the problem of relatively fast standby power consumption of the electronic device in the prior art.
  • An embodiment of the present application provides an electronic device, and the electronic device includes a power module, a mode switching module, and a power management integration module;
  • the power module, the mode switching module and the integrated power management module are electrically connected in sequence, and the mode switching module is located between the power module and the integrated power management module;
  • the mode switching module is used to switch the electronic device between the first mode and the second mode, in the first mode, the mode switching module is in a disconnected state, and the power supply module and the The connection of the integrated power management module is disconnected; in the second mode, the mode switching module is in the on state, and the connection between the power supply module and the integrated power management module is turned on.
  • the electronic device further includes a processor, the processor is connected to the mode switching module, and the processor is used to control the switching of the mode switching module.
  • the mode switching module includes a boost component and a field effect transistor, the boost component is connected to the field effect transistor, and the boost component is used to control the gate and drain of the field effect transistor between on and off;
  • One of the source and the drain is connected to the power module, and the other is connected to the power management integrated module.
  • the drain is connected to the power module, and the source is connected to the integrated power management module;
  • the source is connected to the power module, and the drain is connected to the integrated power management module.
  • the input terminal of the boost component is connected to the source of the field effect transistor, and the output terminal of the boost component is connected to the gate of the field effect transistor.
  • the boost component is a boost chip or a separate boost circuit.
  • the boost component is connected to an external power supply, the boost component is activated, the field effect transistor is turned on, and the power module communicates with the integrated power management module;
  • the field effect transistor remains turned on, and the power supply module remains connected to the integrated power management module.
  • the voltage at the input terminal of the boost component is Vin
  • the enable level of the boost component is EN
  • the voltage at the output terminal of the boost component is Vout
  • the voltage of the integrated power management module is Vbat
  • the threshold voltage of the field effect transistor is Vth
  • the voltage between the gate and the source in the field effect transistor is Vgs
  • a diode is arranged in parallel on the source and the drain.
  • the gate of the field effect transistor is grounded, and a resistor is provided between the gate and the ground terminal.
  • the setting of the mode switching module can disconnect the power supply module and the power management integrated module as required, thereby isolating the power consumption of the back end of the resistance device, reducing the power consumption speed of the electronic device in the standby state, and making the power supply
  • the module has a longer standby time. Improve the straight-through rate of production lines and improve the production yield of electronic equipment. In the state of use, the normal use and charging of electronic equipment can be guaranteed.
  • the embodiment of the present application has the beneficial effect that the wear and tear of the electronic device is slow when it is in standby.
  • Fig. 1 is a schematic diagram of the structure of the electronic equipment in the embodiment of the present application when the power supply module, the mode switching module and the power management integration module are connected;
  • Fig. 2 is a schematic structural diagram embodying a connection mode of the mode switching module in the embodiment of the present application
  • Fig. 3 is a schematic structural diagram embodying another connection mode of the mode switching module in the embodiment of the present application.
  • Power module 20. Mode switching module; 21. Boost component; 22. Field effect transistor; 23. Diode; 30. Power management integrated module; 40. Processor; 50. Ground terminal; 60. Resistor.
  • an embodiment of the present application provides an electronic device, which includes a power supply module 10 , a mode switching module 20 and a power management integration module 30 ;
  • the power supply module 10, the mode switching module 20 and the power management integration module 30 are electrically connected in sequence, and the mode switching module 20 is located between the power supply module 10 and the power management integration module 30;
  • the mode switching module 20 is used to switch the electronic device between the first mode and the second mode, and in the first mode, the mode switching module 20 is in a disconnected state, and the power supply module 10 The connection with the integrated power management module 30 is disconnected; in the second mode, the mode switching module 20 is in the on state, and the connection between the power supply module 10 and the integrated power management module 30 is turned on.
  • the setting of the mode switching module 20 can disconnect the power supply module 10 and the power management integrated module 30 as required, thereby isolating the power consumption of the rear end of the resistor 60 device and reducing the power consumption of the electronic device in the standby state speed, so that the standby time of the power module 10 is longer.
  • the normal use and charging of electronic equipment can be guaranteed.
  • the embodiment of the present application has the beneficial effect that the wear and tear of the electronic device is slow when it is in standby.
  • the electronic equipment with the first mode in this application can also prevent static electricity from being generated in the process of pulling out the battery BTB (board-to-board connector) during the assembly stage and damage the components in the back-end circuit, thereby improving production efficiency.
  • the straight-through rate of line production improves the production yield of electronic equipment.
  • the mode switching module 20 of the present application can be controlled by corresponding software or programs, or can be controlled by a trigger type control, or by a combination of two control methods to control the mode switching module 20, and then control the The mode of the electronic device is switched.
  • the switching modes between the first mode and the second mode can be set differently according to the needs, for example: when the second mode is switched to the first mode, it can be controlled by software or program; when the first mode is switched to the second mode , can be controlled by triggering, for example, the mode switching module 20 directly or indirectly generates a high-level enable under the action of an external power supply, and then triggers and activates the mode switching module 20 to realize switching from the first mode to the second mode .
  • the electronic device further includes a processor 40, the processor 40 is connected to the mode switching module 20, and the processor 40 is used to control the mode switching module 20 on and off.
  • the setting of the processor 40 may control the mode switching module 20 through a control signal.
  • the control signal may be a corresponding enable signal.
  • the processor 40 can also be connected with the integrated power management module 30 so as to control the integrated power management module 30 .
  • the mode switching module 20 includes a boost component 21 and a field effect transistor 22 (MOS transistor), the boost component 21 is connected to the field effect transistor 22, and the The boost component 21 is used to control the on-off between the gate and the drain in the field effect transistor 22; wherein, referring to FIG. 2 and FIG. 3, the three electrodes of the field effect transistor 22 are respectively: the gate G, the source pole S, drain D.
  • MOS transistor field effect transistor 22
  • One of the source and the drain is connected to the power module 10 , and the other is connected to the power management integrated module 30 .
  • the booster component 21 is configured to control the on-off of the three electrodes in the field effect transistor 22 by changing the voltage.
  • the on-off between the gate and the drain of the field effect transistor 22 can be controlled to realize switching of the electronic device between the first mode and the second mode.
  • the connection mode of the source and the drain can be changed as required, wherein the drain can be set to be connected to the power module 10, and the source can be connected to the power management integrated module 30 (see the embodiment in FIG. 2); it can be set to the source It is connected to the power module 10, and the drain is connected to the power management integrated module 30 (see the embodiment in FIG. 3).
  • the input terminal of the boost component 21 is connected to the source of the field effect transistor 22, and the output terminal of the boost component 21 is connected to the source of the field effect transistor 22. Gate connection.
  • the two implementations in this application need to meet the requirements: the input terminal of the boost component 21 is connected to the source of the field effect transistor 22, and the output terminal of the boost component 21 is connected to the gate of the field effect transistor 22. Pole connection; in different implementations, the booster assembly 21 will have different setting positions.
  • the booster component 21 is connected to the processor 40 through a signal transmission line, and the processor 40 controls the booster component 21 through an enable signal, and the enable signal is high enable.
  • the boost component 21 can be switched under the control of the processor 40 , and the state of the boost component 21 can be changed through the processor 40 in cooperation with corresponding software or programs.
  • the interface windows for controlling the enabling signals of the booster components 21 can be provided through software, and the booster components 21 can be controlled by the operator’s control clicks, for example, an enabling signal for turning off the booster components 21 can be sent.
  • the enable signal activated by the booster component 21 can be enabled at a high level, so that it can be charged by an external power supply (such as the power interface of a charger, which can be charged by a power bank or a household power supply).
  • the boost component 21 is a boost chip or a separate boost circuit.
  • the boost chip is an integrated power converter, such as a switched capacitor voltage converter (charge pump), also known as a charge pump, or a DC-DC converter (DC -DC converter).
  • the split boost circuit is a split power converter.
  • the boost component 21 is connected to an external power supply, the boost component 21 is activated, the field effect transistor 22 is turned on, and the power module 10 and the The power management integrated module 30 is connected;
  • the field effect transistor 22 remains turned on, and the power module 10 and the integrated power management module 30 remain connected.
  • the above steps can be activated by an external power supply to realize the conduction of the field effect transistor 22, and then connect the power supply module 10 and the power management integrated module 30 to realize the switching from the transportation state to the use state.
  • the power supply module 10 and the power management integrated module 30 can be kept connected, thereby maintaining the use state of the electronic device. Only when the electronic device needs to be on standby for a long time again or transported over a long distance, the processor 40 can enable the transport state. That is to say, the transportation state is a state that is turned on for a short time or occasionally, and the use state is the normal state of the electronic device.
  • the voltage at the input terminal of the boost component 21 is Vin
  • the enable level of the boost component 21 is EN
  • the voltage at the output terminal of the boost component 21 is Vout
  • the voltage of the integrated power management module 30 is Vbat
  • the threshold voltage of the field effect transistor 22 is Vth
  • the voltage between the gate and the source of the field effect transistor 22 is Vgs
  • the above-mentioned structure describes the process of activating the sound component and making the source and drain conduct. From this, it can be concluded that the boost component 21 is triggered after the external power supply is connected, specifically through The power management integrated module 30 generates an activation voltage to make the booster component 21 enter the working state, and the booster component 21 in the working state will trigger the conduction of the source and drain to realize the communication between the power module 10 and the power management integrated module 30 .
  • the above-mentioned threshold voltage is the critical voltage at which the state of the MOS tube changes.
  • the MOS tube changes from depletion to inversion, it will experience a state where the electron concentration on the Si surface is equal to the hole concentration.
  • the MOS transistor is in a critical conduction state, and the gate voltage of the MOS transistor at this time can be defined as a threshold voltage, which is one of the important parameters of the MOS transistor.
  • a diode 23 is arranged in parallel on the source and the drain.
  • the setting of the diode 23 can protect the field effect transistor 22 and can reduce conduction loss.
  • the diode 23 can be set as a Schottky diode.
  • the field effect transistor 22 of the present application can also use the diode 23
  • the diode integrated in the field effect transistor 22 can be called a body diode.
  • the body diode cannot be quickly turned on due to the slow turn-on speed, and the current cannot pass, which may damage the MOS.
  • a field effect transistor 22 with a diode 23 connected in parallel can be used.
  • the voltage drop of the body diode is greater than that of the external parallel diode 23 , and its conduction loss is larger.
  • the external parallel diode 23 can reduce the conduction loss.
  • the gate of the field effect transistor 22 is grounded, and a resistor 60 is provided between the gate and the ground terminal 50 .
  • the setting of the resistor 60 here is for the isolation and impedance matching between the front and rear stages of the field effect transistor 22, so that the signal can be transmitted more perfectly.
  • the term “comprising”, “comprising” or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements, It also includes other elements not expressly listed, or elements inherent in the process, method, article, or device. Without further limitations, an element defined by the phrase “comprising a " does not preclude the presence of additional identical elements in the process, method, article, or apparatus comprising that element.
  • the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved. Functions are performed, for example, the described methods may be performed in an order different from that described, and various steps may also be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.
  • modules, units, and subunits can be implemented in one or more application specific integrated circuits (Application Specific Integrated Circuits, ASIC), digital signal processor (Digital Signal Processor, DSP), digital signal processing equipment (DSP Device, DSPD ), programmable logic device (Programmable Logic Device, PLD), field-programmable gate array (Field-Programmable Gate Array, FPGA), general-purpose processor, controller, microcontroller, microprocessor, used to implement the application other electronic units or combinations thereof.
  • ASIC Application Specific Integrated Circuits
  • DSP Digital Signal Processor
  • DSP Device digital signal processing equipment
  • PLD programmable logic device
  • FPGA field-programmable gate array
  • controller microcontroller, microprocessor, used to implement the application other electronic units or combinations thereof.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

本申请公开了一种电子设备，属于电子设备技术领域。所述电子设备包括电源模块、模式切换模块和电源管理集成模块；所述电源模块、所述模式切换模块和所述电源管理集成模块依次电连接，所述模式切换模块处于所述电源模块和所述电源管理集成模块之间；其中，所述模式切换模块用于将所述电子设备在第一模式和第二模式之间切换，在所述第一模式下，所述模式切换模块处于断路状态，所述电源模块与所述电源管理集成模块的连接断开；在所述第二模式下，所述模式切换模块处于通路状态，所述电源模块与所述电源管理集成模块的连接导通。

Description

电子设备
相关申请的交叉引用：
本申请要求在2021年7月23日提交中国专利局、申请号为202110842427.6、名称为“电子设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于电子设备技术领域，具体涉及一种电子设备。
背景技术
随着通信技术的发展，电子设备的销售和运输范围越来越广。但是，电子设备从生产，运输，再到销售耗时较长。由于运输到销售的时间会超出待机时间，导致很多用户买的新手机第一次开机因为没电无法开机，或者电池过放导致很长时间才能够将电池充到能开机的电压，极大的影响了用户体验。
发明内容
本申请实施例的目的是提供一种电子设备，能够解决现有技术中电子设备的待机耗电较快的问题。
本申请实施例提供了一种电子设备，所述电子设备包括电源模块、模式切换模块和电源管理集成模块；
所述电源模块、所述模式切换模块和所述电源管理集成模块依次电连接，所述模式切换模块处于所述电源模块和所述电源管理集成模块之间；
其中，所述模式切换模块用于将所述电子设备在第一模式和第二模式之间切换，在所述第一模式下，所述模式切换模块处于断路状态，所述电源模块与所述电源管理集成模块的连接断开；在所述第二模式下，所述模式切换模块处于通路状态，所述电源模块与所述电源管理集成模块的连接导通。
可选地，所述电子设备还包括处理器，所述处理器与所述模式切换模块连接，所述处理器用于控制所述模式切换模块的通断。
可选地，所述模式切换模块包括升压组件和场效应晶体管，所述升压组件和所述场效应晶体管连接，所述升压组件用于控制所述场效应 晶体管中栅极和漏极之间的通断；
所述源极和所述漏极中的一者与所述电源模块连接，另一者与所述电源管理集成模块连接。
可选地，所述漏极与所述电源模块连接，所述源极与所述电源管理集成模块连接；
或者，所述源极与所述电源模块连接，所述漏极与所述电源管理集成模块连接。
可选地，所述升压组件的输入端与所述场效应晶体管的源极连接，所述升压组件的输出端与所述场效应晶体管的栅极连接。
可选地，所述升压组件为升压芯片或者分离式升压电路。
可选地，在所述升压组件与外接电源连接后，所述升压组件被激活，所述场效应晶体管导通，所述电源模块和所述电源管理集成模块连通；
在所述升压组件与外接电源断开后，所述场效应晶体管维持导通，所述电源模块和所述电源管理集成模块保持连通。
可选地，所述升压组件的输入端电压为Vin，所述升压组件的使能电平为EN，所述升压组件的输出端电压为Vout，所述电源管理集成模块的电压为Vbat，所述场效应晶体管的阈值电压为Vth，所述场效应晶体管中栅极与源极之间的电压为Vgs；
在所述升压组件与外接电源连接后，Vin＝EN＝Vbat，且Vout＞Vin+Vth，所述电源管理集成模块产生激活电压，所述升压组件工作；此时，Vout-Vbat＝Vgs＞Vth，所述源极和所述漏极导通，所述电源模块和所述电源管理集成模块连通。
可选地，所述源极和所述漏极上并联设置有二极管。
可选地，所述场效应晶体管的栅极接地，所述栅极与所述接地端之间设置有电阻。
在本申请实施例中，模式切换模块的设置，可以根据需要断开电源模块与电源管理集成模块，进而隔绝电阻设备的后端耗电，降低电子设备在待机状态下的耗电速度，使电源模块的待机时间更长。提高产线生产直通率，提高电子设备的生产良率。在使用状态下，可以保证电子设备的正常使用及充电。本申请的实施例具有电子设备在待机时损耗慢的有益效果。
附图说明
图1是本申请实施例中电子设备中电源模块、模式切换模块和电源管理集成模块连接时的结构示意图；
图2是本申请实施例中体现模式切换模块的一种连接方式的结构示意图；
图3是本申请实施例中体现模式切换模块的另一种连接方式的结构示意图。
附图标记说明：
10、电源模块；20、模式切换模块；21、升压组件；22、场效应晶体管；23、二极管；30、电源管理集成模块；40、处理器；50、接地端；60、电阻。
具体实施例
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请的说明书和权利要求书中的术语“第一”、“第二”等是用于区别类似的对象，而不用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施，且“第一”、“第二”等所区分的对象通常为一类，并不限定对象的个数，例如第一对象可以是一个，也可以是多个。此外，说明书以及权利要求中“和/或”表示所连接对象的至少其中之一，字符“/”，一般表示前后关联对象是一种“或”的关系。
下面结合附图，通过具体的实施例及其应用场景对本申请实施例提供的电子设备进行详细地说明。
参见图1至图3，本申请的实施例提供了一种电子设备，所述电子设备包括电源模块10、模式切换模块20和电源管理集成模块30；
所述电源模块10、所述模式切换模块20和所述电源管理集成模块30依次电连接，所述模式切换模块20处于所述电源模块10和所述电源管理集成模块30之间；
其中，所述模式切换模块20用于将所述电子设备在第一模式和第 二模式之间切换，在所述第一模式下，所述模式切换模块20处于断路状态，所述电源模块10与所述电源管理集成模块30的连接断开；在所述第二模式下，所述模式切换模块20处于通路状态，所述电源模块10与所述电源管理集成模块30的连接导通。
在本申请实施例中，模式切换模块20的设置，可以根据需要断开电源模块10与电源管理集成模块30，进而隔绝电阻60设备的后端耗电，降低电子设备在待机状态下的耗电速度，使电源模块10的待机时间更长。在使用状态下，可以保证电子设备的正常使用及充电。本申请的实施例具有电子设备在待机时损耗慢的有益效果。
需要说明的是，本申请中具有第一模式的电子设备，还可以在装配阶段防止电池BTB(板对板连接器)扣拔的过程产生静电将后端电路中的元器件造成损坏，提高产线生产直通率，提高电子设备的生产良率。
需要说明的是，本申请的模式切换模块20可以通过对应的软件或程序进行控制，也可以通过为触发式的控制，或者通过两种控制方式的结合来对模式切换模块20进行控制，进而对电子设备的模式进行切换。并且，可以根据需要第一模式和第二模式的切换方式设置地不同，比如：在第二模式切换为第一模式时，可以通过软件或程序进行控制；在第一模式切换为第二模式时，可以通过触发式的控制，例如模式切换模块20在外接电源的作用下，直接或间接地产生高电平使能，进而触发并激活模式切换模块20，实现将第一模式切换为第二模式。
可选地，在本申请的实施例中，所述电子设备还包括处理器40，所述处理器40与所述模式切换模块20连接，所述处理器40用于控制所述模式切换模块20的通断。
在本申请实施例中，处理器40的设置可以通过控制信号对模式切换模块20进行控制。控制信号可以为对应的使能信号。处理器40也可以和电源管理集成模块30连接，以便于对电源管理集成模块30进行控制。
可选地，在本申请的实施例中，所述模式切换模块20包括升压组件21和场效应晶体管22(MOS管)，所述升压组件21和所述场效应晶体管22连接，所述升压组件21用于控制所述场效应晶体管22中栅极和漏极之间的通断；其中，参见图2和图3，场效应晶体管22的三 个电极分别为：栅极G、源极S、漏极D。
所述源极和所述漏极中的一者与所述电源模块10连接，另一者与所述电源管理集成模块30连接。
在本申请实施例中，升压组件21的设置用于通过电压的改变，来控制场效应晶体管22中三个电极之间的通断。具体可以对场效应晶体管22中栅极和漏极之间的通断进行控制，实现电子设备在第一模式和第二模式之间切换。源极和漏极的连接方式可以根据需要改变，其中，可以设置为漏极与电源模块10连接，源极与电源管理集成模块30连接(参见图2中的实施方式)；可以设置为源极与电源模块10连接，漏极与电源管理集成模块30连接(参见图3中的实施方式)。
可选地，在本申请的实施例中，所述升压组件21的输入端与所述场效应晶体管22的源极连接，所述升压组件21的输出端与所述场效应晶体管22的栅极连接。
在本申请实施例中，本申请中的两种实施方式均需要满足：升压组件21的输入端与场效应晶体管22的源极连接，升压组件21的输出端与场效应晶体管22的栅极连接；不同的实施方式中升压组件21将会出现设置位置不同的情况。
可选地，在本申请的实施例中，所述升压组件21通过信号传输线与所述处理器40连接，所述处理器40通过使能信号控制所述升压组件21，所述使能信号为高电平使能。
在本申请实施例中，升压组件21可以在处理器40的控制下进行切换，通过处理器40配合对应的软件或程序可以改变升压组件21的状态。比如，可以通过软件提供一个个控制升压组件21使能信号的界面窗口，通过操作人员的的控制点击来对升压组件21的进行控制，比如可以发出关闭升压组件21的使能信号。升压组件21激活的使能信号可以为高电平使能，这样可以通过外接电源(比如充电器的通电接口，可以通过充电宝或者家用电源充电)。
可选地，在本申请的实施例中，所述升压组件21为升压芯片或者分离式升压电路。
在本申请实施例中，升压芯片是一种集成式的电源变换器，比如可以为开关电容式电压变换器(charge pump)，也称为电荷泵，也可以为直流—直流变换器(DC-DC converter)。分离式升压电路是一种 分离式的电源变换器。
可选地，在本申请的实施例中，在所述升压组件21与外接电源连接后，所述升压组件21被激活，所述场效应晶体管22导通，所述电源模块10和所述电源管理集成模块30连通；
在所述升压组件21与外接电源断开后，所述场效应晶体管22维持导通，所述电源模块10和所述电源管理集成模块30保持连通。
在本申请实施例中，上述步骤可以通过外接电源的激活下，实现场效应晶体管22的导通，进而可以使电源模块10和电源管理集成模块30连通，实现有运输状态向使用状态的切换。在外接电源断开后，由于场效应晶体管22可以维持导通状态，这样可以使电源模块10和电源管理集成模块30保持连通，进而可以使电子设备的使用状态得以保持。只有在电子设备需要再次长时间待机或长途运输时，可以通过处理器40开启运输状态。也就是说运输状态是短时间或偶尔才开启的状态，使用状态才是电子设备的常态状态。
可选地，在本申请的实施例中，所述升压组件21的输入端电压为Vin，所述升压组件21的使能电平为EN，所述升压组件21的输出端电压为Vout，所述电源管理集成模块30的电压为Vbat，所述场效应晶体管22的阈值电压为Vth，所述场效应晶体管22中栅极与源极之间的电压为Vgs；
在所述升压组件21与外接电源连接后，Vin＝EN＝Vbat，且Vout＞Vin+Vth，所述电源管理集成模块30产生激活电压，所述升压组件21工作；此时，Vout-Vbat＝Vgs＞Vth，所述源极和所述漏极导通，所述电源模块10和所述电源管理集成模块30连通。
在本申请实施例中，上述结构描述了声音组件激活并使源极和漏极导通的过程，由此可以得出升压组件21是在外接电源连接后，触发式的激活，具体是通过电源管理集成模块30产生激活电压来是升压组件21进入到工作状态，进入工作状态的升压组件21会触发源极和漏极的导通，实现电源模块10和电源管理集成模块30的连通。
需要说明的是，上述的阈值电压是MOS管状态出现变化的临界电压，当MOS管由耗尽向反型转变时，要经历一个Si表面电子浓度等于空穴浓度的状态。此时MOS管处于临界导通状态，MOS管此时的栅电压可以定义为阈值电压，它是MOS管的重要参数之一。
可选地，在本申请的实施例中，所述源极和所述漏极上并联设置有二极管23。
在本申请实施例中，二极管23的设置可以对场效应晶体管22进行保护，并且可以降低导通损耗。其中的二极管23可以设置为肖特基二极管。当流过SD(栅极G、源极S、漏极D)的电流过大时可以分流一部分，进而实现对场效应晶体管22的保护；本申请的场效应晶体管22也可以根据需要将二极管23接触在场效应晶体管22内，集成在场效应晶体管22的二极管可以称为体二极管，对于高速开关的场合，体二极管由于开通速度过慢，导致无法迅速开通，电流无法通过，进而可能会损坏MOS，此时可以采用并联的二极管23的场效应晶体管22。体二极管压降要大于外部并联二极管23，其导通损耗较大，相较于体二极管，外部并联二极管23可以降低导通损耗。
可选地，在本申请的实施例中，所述场效应晶体管22的栅极接地，所述栅极与所述接地端50之间设置有电阻60。
在本申请实施例中，此处电阻60的设置是为了场效应晶体管22前后级间的隔离和阻抗匹配，使信号可以更完美的传输。
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素。此外，需要指出的是，本申请实施方式中的方法和装置的范围不限按示出或讨论的顺序来执行功能，还可包括根据所涉及的功能按基本同时的方式或按相反的顺序来执行功能，例如，可以按不同于所描述的次序来执行所描述的方法，并且还可以添加、省去、或组合各种步骤。另外，参照某些示例所描述的特征可在其他示例中被组合。
上面结合附图对本申请的实施例进行了描述，但是本申请并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本申请的启示下，在不脱离本申请宗旨和权利要求所保护的范围情况下，还可做出很多形式，均属于本申请的保护之内。
可以理解的是，本申请实施例描述的这些实施例可以用硬件、软件、固件、中间件、微码或其组合来实现。对于硬件实现，模块、单元、子单元可以实现在一个或多个专用集成电路(Application Specific Integrated Circuits,ASIC)、数字信号处理器(Digital Signal Processor,DSP)、数字信号处理设备(DSP Device,DSPD)、可编程逻辑设备(Programmable Logic Device,PLD)、现场可编程门阵列(Field-Programmable Gate Array,FPGA)、通用处理器、控制器、微控制器、微处理器、用于执行本申请所述功能的其它电子单元或其组合中。

Claims (10)

  1. 一种电子设备，所述电子设备包括电源模块、模式切换模块和电源管理集成模块；
    所述电源模块、所述模式切换模块和所述电源管理集成模块依次电连接，所述模式切换模块处于所述电源模块和所述电源管理集成模块之间；
    其中，所述模式切换模块用于将所述电子设备在第一模式和第二模式之间切换，在所述第一模式下，所述模式切换模块处于断路状态，所述电源模块与所述电源管理集成模块的连接断开；在所述第二模式下，所述模式切换模块处于通路状态，所述电源模块与所述电源管理集成模块的连接导通。
  2. 根据权利要求1所述的电子设备，其中，所述电子设备还包括处理器，所述处理器与所述模式切换模块连接，所述处理器用于控制所述模式切换模块的通断。
  3. 根据权利要求2所述的电子设备，其中，所述模式切换模块包括升压组件和场效应晶体管，所述升压组件和所述场效应晶体管连接，所述升压组件用于控制所述场效应晶体管中栅极和漏极之间的通断；
    所述源极和所述漏极中的一者与所述电源模块连接，另一者与所述电源管理集成模块连接。
  4. 根据权利要求3所述的电子设备，其中，所述漏极与所述电源模块连接，所述源极与所述电源管理集成模块连接；
    或者，所述源极与所述电源模块连接，所述漏极与所述电源管理集成模块连接。
  5. 根据权利要求3所述的电子设备，其中，所述升压组件的输入端与所述场效应晶体管的源极连接，所述升压组件的输出端与所述场效应晶体管的栅极连接。
  6. 根据权利要求3所述的电子设备，其中，所述升压组件为升压芯片或者分离式升压电路。
  7. 根据权利要求3所述的电子设备，其中，在所述升压组件与外接电源连接后，所述升压组件被激活，所述场效应晶体管导通，所述电源模块和所述电源管理集成模块连通；
    在所述升压组件与外接电源断开后，所述场效应晶体管维持导通，所述电源模块和所述电源管理集成模块保持连通。
  8. 根据权利要求7所述的电子设备，其中，所述升压组件的输入端电压为Vin，所述升压组件的使能电平为EN，所述升压组件的输出端电压为Vout，所述电源管理集成模块的电压为Vbat，所述场效应晶体管的阈值电压为Vth，所述场效应晶体管中栅极与源极之间的电压为Vgs；
    在所述升压组件与外接电源连接后，Vin＝EN＝Vbat，且Vout＞Vin+Vth，所述电源管理集成模块产生激活电压，所述升压组件工作；此时，Vout-Vbat＝Vgs＞Vth，所述源极和所述漏极导通，所述电源模块和所述电源管理集成模块连通。
  9. 根据权利要求3所述的电子设备，其中，所述源极和所述漏极上并联设置有二极管。
  10. 根据权利要求3所述的电子设备，其中，所述场效应晶体管的栅极接地，所述栅极与所述接地端之间设置有电阻。
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