WO2022257815A1 - Mass transfer method for micro light-emitting diodes, display device, and fabrication method therefor - Google Patents

Mass transfer method for micro light-emitting diodes, display device, and fabrication method therefor Download PDF

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Publication number
WO2022257815A1
WO2022257815A1 PCT/CN2022/096244 CN2022096244W WO2022257815A1 WO 2022257815 A1 WO2022257815 A1 WO 2022257815A1 CN 2022096244 W CN2022096244 W CN 2022096244W WO 2022257815 A1 WO2022257815 A1 WO 2022257815A1
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layer
emitting diodes
mass transfer
led
sensing
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PCT/CN2022/096244
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French (fr)
Chinese (zh)
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谈江乔
刘鉴明
柯志杰
吴双
周川
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厦门乾照半导体科技有限公司
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Priority to KR1020247000503A priority Critical patent/KR20240018604A/en
Publication of WO2022257815A1 publication Critical patent/WO2022257815A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/799—Apparatus for disconnecting
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/828—Bonding techniques
    • H01L2224/8285—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Definitions

  • the invention relates to the field of light emitting diodes, in particular to a mass transfer method of micro light emitting diodes, a display device and a manufacturing method thereof.
  • Micro-component technology refers to an array of micro-sized components integrated at high density on a substrate.
  • micro-pitch light-emitting diode (Micro LED) technology has gradually become a research hotspot, and the industry expects high-quality micro-component products to enter the market.
  • High-quality fine-pitch light-emitting diode products will have a profound impact on traditional display products such as LCD/OLED that are already on the market.
  • Micro-Led technology that is, LED miniaturization and matrix technology, refers to the technology of integrating high-density, micro-sized LED arrays on a chip to reduce the distance between pixels from millimeters to microns. Due to the superior performance of Micro-Led, which inherits the advantages of high brightness, high yield, high reliability, small size and long life of inorganic LED, it is more and more widely used in the display field.
  • the microcomponents are first formed on a donor substrate and then transferred to a receiving substrate.
  • the receiving substrate is, for example, a display screen.
  • the mass transfer is the main bottleneck of the industrialization of micro light emitting diodes. How to solve this technical problem has become a key link in the cost reduction and mass production of micro light emitting diodes.
  • the present inventor specially designed a mass transfer method of micro light emitting diodes, a display device and a manufacturing method thereof, and this case arose from this.
  • the object of the present invention is to provide a method for mass transfer of micro light emitting diodes, a display device and a manufacturing method thereof, so as to reduce the process difficulty and cost of mass transfer of micro light emitting diodes.
  • a method for mass transfer of miniature light-emitting diodes comprising the steps of:
  • Step S01 providing an LED array structure
  • the LED array structure includes a growth substrate and several LED chips arranged in an array formed on the surface of the growth substrate, each of the LED chips includes a horizontal structure LED chip or Vertical structure LED chips;
  • Step S02 depositing an adhesion layer, the adhesion layer covers the surface of each of the LED chips facing away from the growth substrate, and fills the gap between adjacent LED chips;
  • Step S03 providing a transfer substrate, and forming a sensing layer on the surface of the transfer substrate;
  • Step S04 bonding the transfer substrate described in step S03 to the LED array structure formed in step S02, so that the adhesive layer is bonded to the sensing layer;
  • Step S05 removing the growth substrate
  • Step S06 selectively destroying the sensing layer and the adhesion layer through a mask and combining with corresponding sensing sources, so that the corresponding LED chips naturally fall to the target substrate.
  • the thickness of the adhesive layer is H
  • the height of the LED core is H1
  • the adhesive layer includes an adhesive material added with a photosensitizer and/or a heat sensitizer.
  • the adhesive layer includes any one of ultraviolet photosensitive glue, silica gel, photoresist, hot melt glue, and glass glue.
  • the sensing layer includes any one of heat sensing material, ultraviolet light sensing material, laser sensing material, radiation sensing material, plasma sensing material, and microwave sensing material.
  • the target substrate is a material layer with self-adhesiveness, including any one of blue film, thin film, UV film, pyrolytic adhesive film, and silica gel.
  • the step S05 further includes removing defective LED chips and the growth substrate simultaneously through a masking process.
  • the growth substrate includes any one of sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride, and gallium arsenide.
  • the LED chip at least includes a first-type semiconductor layer, an active region, and a second-type semiconductor layer stacked in sequence on the surface of the growth substrate, and a first electrode that forms an ohmic contact with the first-type semiconductor layer , and a second electrode forming ohmic contact with the second-type semiconductor layer.
  • the present invention also provides a method for manufacturing an LED display device, which uses the mass transfer method for micro light emitting diodes described in any one of the above to realize mass transfer.
  • the present invention also provides an LED display device, which is manufactured by using the above LED display device manufacturing method.
  • the surface of each LED chip away from the growth substrate is covered with an adhesive layer, and formed on the surface of the transfer substrate.
  • Sensing layer during the transfer process, the adhesive layer is bonded to the sensing layer by bonding, and the sensing layer is located above the adhesive layer; so that the selective sensing source can be selectively combined with the corresponding sensing source through the mask
  • the sensing layer and the adhesion layer are destroyed so that the corresponding LED chips naturally fall to the target substrate, the excess energy generated by destroying the sensing layer can be absorbed by the adhesion layer, thereby effectively protecting the LED chips from Damaged by induction sources such as light, heat, electromagnetic waves, etc.
  • the mass transfer method of miniature light-emitting diodes provided by the present invention can effectively avoid the trouble of cleaning the induction layer by directly contacting the adhesive layer and covering the LED chips.
  • the present invention adopts the method of separately coating the induction layer and the adhesion layer, and then utilizes the adhesive force of the adhesion layer itself, combined with the physical bonding method.
  • the coating uniformity of the induction layer and the adhesion layer is not high, The production cost is low; on the other hand, it can eliminate the air bubbles generated by the two during the coating process.
  • the thickness of the adhesive layer to be H and the height of the LED core to be H1, then H1 ⁇ H ⁇ 2H1, while ensuring that the LED array structure can be effectively bonded to the sensing layer through the adhesive layer,
  • the sensing layer and the adhesion layer are selectively destroyed through the mask and combined with the corresponding induction source, the LED chip is damaged when the adhesion layer is too thick and falls off.
  • the adhesive layer includes a viscous material added with photosensitizer and/or heat sensitizer, which is beneficial to absorb excess light or heat energy, protect the LED core from damage, and maintain the original photoelectric properties.
  • the present invention also provides a method for manufacturing an LED display device, which is simple in operation and easy to implement while achieving the above technical effects.
  • the present invention also provides an LED display device formed by the above-mentioned transfer method, which has a simple structure and is easy to operate and realize.
  • FIG. 1 is a schematic flow chart of a mass transfer method for micro light-emitting diodes provided by an embodiment of the present invention
  • 2 to 13 are structural schematic diagrams corresponding to the mass transfer method of micro light emitting diodes provided by the embodiment of the present invention.
  • a kind of mass transfer method of miniature light-emitting diode comprises the following steps:
  • the LED array structure includes a growth substrate 100 and a plurality of LED chips 110 arranged in an array formed on the surface of the growth substrate 100.
  • Each LED chip 110 Including a horizontal structure LED chip 110 or a vertical structure LED chip 110;
  • Fig. 2 has shown the array structure of vertical structure LED chip 110
  • Fig. 3 has shown the array structure of horizontal structure LED chip 110;
  • the type of the growth substrate 100 is not limited in this embodiment, for example, the growth substrate 100 includes any one of sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride, and gallium arsenide; Meanwhile, the specific structure and material composition of the LED chip 110 are not limited in this embodiment.
  • the LED chip 110 at least includes a first-type semiconductor layer, an active region, and a second-type semiconductor layer stacked sequentially on the surface of the growth substrate 100, and the first-type semiconductor layer A first electrode that forms an ohmic contact with the semiconductor layer, and a second electrode that forms an ohmic contact with the second-type semiconductor layer;
  • the specific material types of the first-type semiconductor layer, the active region, and the second-type semiconductor layer are in This embodiment is also not limited, for example, the first type semiconductor layer can be but not limited to N-GaN layer, correspondingly, the second type semiconductor layer can be but not limited to P-GaN layer; meanwhile, the first electrode
  • the specific location of the second electrode is not limited, as long as the first electrode forms an ohmic contact with the first-type semiconductor layer, and the second electrode forms an ohmic contact with the second-type semiconductor layer;
  • the LED chip 110 is a vertical structure LED chip 110.
  • the conductive growth substrate 100 can be used as the first electrode of the LED chip 110, such as Figure 2 shows.
  • Step S02 deposit an adhesion layer 310, the adhesion layer 310 covers the surface of each LED chip 110 facing away from the growth substrate 100, and fills the gap between adjacent LED chips 110 ;
  • FIG. 4 illustrates the deposition of an adhesion layer 310 on the surface of an array of vertical structure LED chips 110
  • FIG. 5 illustrates the deposition of an adhesion layer 310 on the surface of an array of horizontal structure LED chips 110;
  • the type of the adhesive layer 310 is not limited in this embodiment, for example, the adhesive layer 310 includes any one of ultraviolet photosensitive adhesive, silica gel, photoresist, hot melt adhesive, and glass adhesive.
  • the adhesive layer 310 includes an adhesive material added with a photosensitizer and/or a heat sensitizer.
  • Step S03 as shown in FIG. 6, providing a transfer substrate 200, and forming a sensing layer 320 on the surface of the transfer substrate 200;
  • the type of the transfer substrate 200 is not limited in this embodiment, for example, the material is any one of sapphire, gallium nitride, silicon dioxide, etc., wherein the material of the transfer substrate 200 is the same as that of the growth substrate 100 The materials can be the same or different.
  • the type of the sensing layer 320 is not limited in this embodiment, for example, the sensing layer 320 includes thermal sensing materials, ultraviolet light sensing materials, laser sensing materials, radiation sensing materials, plasma sensing materials, microwave sensing materials any of the.
  • Step S04 bonding the transfer substrate 200 in step S03 to the LED array structure formed in step S02, so that the adhesive layer 310 and the sensing layer 320 are bonded;
  • FIG. 7 illustrates the alignment bonding of the array of vertical structure LED chips 110 shown in FIG. 4 and the transfer substrate 200 shown in FIG. 6; FIG. The array is para-bonded to the transfer substrate 200 shown in FIG. 6 .
  • bonding process is not limited in this embodiment, for example, electrostatic bonding, thermal bonding, and the like.
  • Step S05 as shown in FIG. 9 and FIG. 10 , remove the growth substrate 100;
  • FIG. 9 illustrates the growth substrate 100 with the array of vertical structure LED chips 110 removed
  • FIG. 10 illustrates the growth substrate 100 with the array of horizontal structure LED chips 110 removed.
  • removing the growth substrate 100 includes: using a laser lift-off process to remove the growth substrate 100, but the present application is not limited to this, in other embodiments of the present application, The growth substrate 100 may be removed using other removal processes, depending on the circumstances.
  • Step S06 selectively destroys the sensing layer 320 and the adhesive layer 310 through a mask combined with the corresponding sensing source Y, so that the corresponding LED chips 110 naturally fall to the target substrate 500 .
  • the specific material type of the target substrate 500 is not limited in this embodiment, as long as it meets the requirements of a material layer with self-adhesiveness.
  • the target substrate 500 includes blue film, thin film, UV film, pyrolytic adhesive film, Any kind of silicone.
  • forming a first mask on the side of the first substrate away from the LED array includes:
  • a layer of photoresist is applied on the side of the transfer substrate 200 away from the LED core 110 to form a first photoresist layer 210 ;
  • the first photoresist layer 210 is exposed and developed, and a first photoresist pattern is formed on the side of the transfer substrate 200 away from the LED chip 110 as a first mask.
  • the first mask includes a light-transmitting area and an opaque area, so that the light-sensitive material layer can be irradiated through the light-transmitting area of the first mask, so that the light-sensitive material layer corresponds to the first mask. Partial decomposition of the light-transmitting region of a reticle.
  • FIG. 13 only shows the masking of the array of vertical structure LED chips 110 and the selective destruction of the sensing layer 320 and the adhesion layer 310 in combination with the corresponding induction source Y, so that the corresponding LED chips 110 fall naturally. to the target substrate 500; in other embodiments of the present application, corresponding operations may also be performed on the array of horizontal structure LED chips 110, without limitation.
  • the embodiment of the present application does not limit the type of the sensing source Y, as long as it satisfies the sensitivity of the material of the sensing layer 320 , the sensing layer 320 can be destroyed by the sensing source Y.
  • the thickness of the adhesive layer 310 is H
  • the height of the LED chip 110 is H1
  • step S05 also includes removing the defective LED chips 110 and the growth substrate 100 at the same time through a masking process, as shown in FIG. 11 and FIG. 12 , where the vertical structure After the array of LED chips 110 marks the defective LED chips 110 with a mask 170, the defective LED chips 110 and the growth substrate 100 are removed at the same time; it should be noted that in other embodiments of the present application, the horizontal structure LED The array of core particles 110 performs a mask to remove defective LED core particles 110 and the growth substrate 100 at the same time, without limitation. At the same time, the specific process of marking the defective LED chips 110 through a mask is not limited, and details can be referred to the masking process shown in step S06.
  • This embodiment also provides a method for manufacturing an LED display device, which adopts the mass transfer method of any one of the micro light-emitting diodes mentioned above to realize mass transfer.
  • This embodiment also provides an LED display device, which is manufactured by using the above-mentioned LED display device manufacturing method.
  • the surface of each LED chip 110 facing away from the growth substrate 100 is covered with an adhesive layer 310
  • the surface of the transfer substrate 200 is covered with an adhesive layer 310 .
  • the adhesive layer 310 is bonded to the sensing layer 320 by bonding, and the sensing layer 320 is located above the adhesive layer 310; thus passing through the mask and combining the corresponding sensing source Selectively destroy the sensing layer 320 and the adhesive layer 310, so that when the corresponding LED chips 110 naturally fall to the target substrate 500, the excess energy generated by destroying the sensing layer 320 can be absorbed by the adhesive layer 310, thereby effectively protecting
  • the LED die 110 is not damaged by induction sources such as light, heat, electromagnetic waves and the like.
  • the mass transfer method of micro light emitting diodes provided by the present invention can effectively avoid the trouble of cleaning the sensing layer 320 by directly contacting the adhesive layer 310 and covering the LED chips 110 .
  • the sensing layer 320 and the adhesive layer 310 are coated separately, and the adhesive force of the adhesive layer 310 itself is used in combination with physical bonding.
  • the sensing layer 320 and the adhesive layer are evenly coated. The performance requirements are not high, and the production cost is low; on the other hand, it can eliminate the air bubbles generated during the coating process.
  • the thickness of the adhesive layer 310 to be H, and the height of the LED chip 110 to be H1, then H1 ⁇ H ⁇ 2H1, while ensuring that the LED array structure can be effectively bonded to the sensing layer 320 through the adhesive layer 310, Avoid damage to the LED core 110 when the adhesive layer 310 is too thick and the LED core 110 falls off when selectively destroying the sensing layer 320 and the adhesive layer 310 through a mask and in combination with a corresponding induction source.
  • the adhesive layer 310 includes an adhesive material added with a photosensitizer and/or a heat sensitizer, which is beneficial to absorb excess light or heat energy, protect the LED core 110 from damage, and maintain its original photoelectric properties.
  • This embodiment also provides a method for manufacturing an LED display device, which is simple in operation and easy to implement while achieving the above technical effects.
  • This embodiment also provides an LED display device formed by the above-mentioned transfer method, which has a simple structure and is easy to operate and implement.

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Abstract

The present invention provides a mass transfer method for micro light-emitting diodes, a display device, and a fabrication method therefor, the method comprising: covering a side surface of each LED core particle that faces away from a growth substrate with an adhesive layer, and forming an induction layer on a surface of a transfer substrate; during transfer, adhering the adhesive layer and the induction layer by means of bonding, the induction layer being located above the adhesive layer; and therefore, selectively destroying the induction layer and the adhesive layer by means of a mask and by combining a corresponding induction source, so that when corresponding LED core particles naturally fall to a target substrate, excess energy generated by destroying the induction layer may be absorbed by the adhesive layer, and then the LED core particles are effectively protected from being damaged by the induction source, such as light, heat and electromagnetic waves.

Description

微型发光二极管的巨量转移方法、显示装置及其制作方法Mass transfer method of miniature light-emitting diode, display device and manufacturing method thereof
本申请要求于2021年06月07日提交中国专利局、申请号为202110630715.5、发明名称为“微型发光二极管的巨量转移方法、显示装置及其制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application submitted to the China Patent Office on June 07, 2021, with the application number 202110630715.5, and the title of the invention is "Mass transfer method of micro light-emitting diodes, display device and manufacturing method thereof", all of which The contents are incorporated by reference in this application.
技术领域technical field
本发明涉及发光二极管领域，尤其涉及一种微型发光二极管的巨量转移方法、显示装置及其制作方法。The invention relates to the field of light emitting diodes, in particular to a mass transfer method of micro light emitting diodes, a display device and a manufacturing method thereof.
背景技术Background technique
微元件技术是指在衬底上以高密度集成的微小尺寸的元件阵列。目前，微间距发光二极管(Micro LED)技术逐渐成为研究热门，工业界期待有高品质的微元件产品进入市场。高品质微间距发光二极管产品会对市场上已有的诸如LCD/OLED的传统显示产品产生深刻影响。Micro-Led技术，即LED微缩化和矩阵化技术，指的是在一个芯片上集成高密度、微小尺寸的LED阵列的技术，以将像素点的距离从毫米级降低至微米级。由于Micro-Led性能上表现优越，继承了无机LED的高亮度、高良率、高可靠性、体积小、寿命长等优势，在显示领域的应用越来越广泛。Micro-component technology refers to an array of micro-sized components integrated at high density on a substrate. At present, micro-pitch light-emitting diode (Micro LED) technology has gradually become a research hotspot, and the industry expects high-quality micro-component products to enter the market. High-quality fine-pitch light-emitting diode products will have a profound impact on traditional display products such as LCD/OLED that are already on the market. Micro-Led technology, that is, LED miniaturization and matrix technology, refers to the technology of integrating high-density, micro-sized LED arrays on a chip to reduce the distance between pixels from millimeters to microns. Due to the superior performance of Micro-Led, which inherits the advantages of high brightness, high yield, high reliability, small size and long life of inorganic LED, it is more and more widely used in the display field.
在制造微元件的过程中，首先在施体基板上形成微元件，接着将微元件转移到接收基板上。接收基板例如是显示屏。在微型发光二极管的制作过程中，巨量转移是微型发光二极管实现产业化的主要瓶颈，如何解决这一技术难题， 成为微型发光二极管成本降低和量产的关键环节。In the process of fabricating microcomponents, the microcomponents are first formed on a donor substrate and then transferred to a receiving substrate. The receiving substrate is, for example, a display screen. In the production process of micro light emitting diodes, the mass transfer is the main bottleneck of the industrialization of micro light emitting diodes. How to solve this technical problem has become a key link in the cost reduction and mass production of micro light emitting diodes.
有鉴于此，本发明人专门设计了一种微型发光二极管的巨量转移方法、显示装置及其制作方法，本案由此产生。In view of this, the present inventor specially designed a mass transfer method of micro light emitting diodes, a display device and a manufacturing method thereof, and this case arose from this.
发明内容Contents of the invention
本发明的目的在于提供一种微型发光二极管的巨量转移方法、显示装置及其制作方法，以降低微型发光二极管巨量转移的工艺难度和成本。The object of the present invention is to provide a method for mass transfer of micro light emitting diodes, a display device and a manufacturing method thereof, so as to reduce the process difficulty and cost of mass transfer of micro light emitting diodes.
为了实现上述目的，本发明采用的技术方案如下：In order to achieve the above object, the technical scheme adopted in the present invention is as follows:
一种微型发光二极管的巨量转移方法，包括如下步骤：A method for mass transfer of miniature light-emitting diodes, comprising the steps of:
步骤S01、提供一LED阵列结构，所述LED阵列结构包括生长基板及在所述生长基板表面形成的若干个呈阵列排布的LED芯粒，各所述LED芯粒包括水平结构LED芯粒或垂直结构LED芯粒；Step S01, providing an LED array structure, the LED array structure includes a growth substrate and several LED chips arranged in an array formed on the surface of the growth substrate, each of the LED chips includes a horizontal structure LED chip or Vertical structure LED chips;
步骤S02、沉积一粘附层，所述粘附层覆盖各所述LED芯粒背离所述生长基板的一侧表面，并填充相邻LED芯粒之间的间隙；Step S02, depositing an adhesion layer, the adhesion layer covers the surface of each of the LED chips facing away from the growth substrate, and fills the gap between adjacent LED chips;
步骤S03、提供一转移基板，并在所述转移基板的表面形成感应层；Step S03, providing a transfer substrate, and forming a sensing layer on the surface of the transfer substrate;
步骤S04、将步骤S03所述的转移基板与步骤S02所形成的LED阵列结构键合，使所述粘附层与所述感应层形成粘接；Step S04, bonding the transfer substrate described in step S03 to the LED array structure formed in step S02, so that the adhesive layer is bonded to the sensing layer;
步骤S05、去除所述生长基板；Step S05, removing the growth substrate;
步骤S06、通过掩膜并结合相应的感应源选择性破坏所述感应层和粘附层，使对应的LED芯粒自然掉落至目标基板。Step S06 , selectively destroying the sensing layer and the adhesion layer through a mask and combining with corresponding sensing sources, so that the corresponding LED chips naturally fall to the target substrate.
优选地，所述粘附层的厚度为H，所述LED芯粒的高度为H1，则H1＜H＜2H1。Preferably, the thickness of the adhesive layer is H, and the height of the LED core is H1, then H1<H<2H1.
优选地，所述粘附层包括添加有感光剂和/或热敏剂的黏性材料。Preferably, the adhesive layer includes an adhesive material added with a photosensitizer and/or a heat sensitizer.
优选地，所述粘附层包括紫外感光胶、硅胶、光刻胶、热熔胶、玻璃胶中的任意一种。Preferably, the adhesive layer includes any one of ultraviolet photosensitive glue, silica gel, photoresist, hot melt glue, and glass glue.
优选地，所述感应层包括热感应材料、紫外光感应材料、激光感应材料、辐射感应材料、等离子体感应材料、微波感应材料中的任意一种。Preferably, the sensing layer includes any one of heat sensing material, ultraviolet light sensing material, laser sensing material, radiation sensing material, plasma sensing material, and microwave sensing material.
优选地，所述目标基板为自带粘性的材料层，包括蓝膜、薄膜、UV膜、热解粘膜、硅胶中的任意一种。Preferably, the target substrate is a material layer with self-adhesiveness, including any one of blue film, thin film, UV film, pyrolytic adhesive film, and silica gel.
优选地，所述步骤S05还包括通过掩膜工艺将缺陷LED芯粒与所述生长基板同时去除。Preferably, the step S05 further includes removing defective LED chips and the growth substrate simultaneously through a masking process.
优选地，所述生长基板包括蓝宝石、碳化硅、硅、氮化镓、氮化铝、砷化镓中的任意一种。Preferably, the growth substrate includes any one of sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride, and gallium arsenide.
优选地，所述LED芯粒至少包括在所述生长基板表面依次堆叠的第一型半导体层、有源区及第二型半导体层，与所述第一型半导体层形成欧姆接触的第一电极，以及与所述第二型半导体层形成欧姆接触的第二电极。Preferably, the LED chip at least includes a first-type semiconductor layer, an active region, and a second-type semiconductor layer stacked in sequence on the surface of the growth substrate, and a first electrode that forms an ohmic contact with the first-type semiconductor layer , and a second electrode forming ohmic contact with the second-type semiconductor layer.
本发明还提供了一种LED显示装置的制作方法，其采用上述任一项所述的微型发光二极管的巨量转移方法实现巨量转移。The present invention also provides a method for manufacturing an LED display device, which uses the mass transfer method for micro light emitting diodes described in any one of the above to realize mass transfer.
本发明还提供了一种LED显示装置，其采用上述的LED显示装置制作方法而制作形成。The present invention also provides an LED display device, which is manufactured by using the above LED display device manufacturing method.
经由上述的技术方案可知，本发明提供的微型发光二极管的巨量转移方法，通过在各所述LED芯粒背离所述生长基板的一侧表面覆盖有粘附层，并在转移基板的表面形成感应层；在转移过程中，通过键合使所述粘附层与所述感应层形成粘接，且感应层位于粘附层的上方；从而在后续通过掩膜并结合相应 的感应源选择性破坏所述感应层和粘附层，使对应的LED芯粒自然掉落至目标基板时，破坏所示感应层所产生的多余能量可被所述粘附层吸收，继而有效保护LED芯粒不受感应源如光、热、电磁波等的伤害。It can be known from the above-mentioned technical solutions that in the mass transfer method of micro light-emitting diodes provided by the present invention, the surface of each LED chip away from the growth substrate is covered with an adhesive layer, and formed on the surface of the transfer substrate. Sensing layer; during the transfer process, the adhesive layer is bonded to the sensing layer by bonding, and the sensing layer is located above the adhesive layer; so that the selective sensing source can be selectively combined with the corresponding sensing source through the mask When the sensing layer and the adhesion layer are destroyed so that the corresponding LED chips naturally fall to the target substrate, the excess energy generated by destroying the sensing layer can be absorbed by the adhesion layer, thereby effectively protecting the LED chips from Damaged by induction sources such as light, heat, electromagnetic waves, etc.
同时，由于感应层的材料结构较为致密，在后续的清洗过程中需选择苛刻的物理、化学条件方可洗净LED芯粒，然而苛刻的物理、化学条件势必会影响LED芯粒的良率和电性；本发明提供的微型发光二极管的巨量转移方法，通过将粘附层直接接触并覆盖LED芯粒可有效避免感应层清洗的麻烦。At the same time, due to the relatively dense material structure of the sensing layer, harsh physical and chemical conditions must be selected in the subsequent cleaning process to clean the LED core. However, harsh physical and chemical conditions will inevitably affect the yield and quality of the LED core. Electricity: The mass transfer method of miniature light-emitting diodes provided by the present invention can effectively avoid the trouble of cleaning the induction layer by directly contacting the adhesive layer and covering the LED chips.
其次，本发明采用分开涂布感应层和粘附层，再利用粘附层本身的粘力，结合物理键合的方式，一方面对感应层和粘结层的涂布均匀性要求不高，生产成本低；另一方面可消除两者在涂布过程中产生的气泡。Secondly, the present invention adopts the method of separately coating the induction layer and the adhesion layer, and then utilizes the adhesive force of the adhesion layer itself, combined with the physical bonding method. On the one hand, the coating uniformity of the induction layer and the adhesion layer is not high, The production cost is low; on the other hand, it can eliminate the air bubbles generated by the two during the coating process.
然后，通过设置所述粘附层的厚度为H，所述LED芯粒的高度为H1，则H1＜H＜2H1，在确保LED阵列结构可通过粘附层与感应层有效键合的同时，避免在通过掩膜并结合相应的感应源选择性破坏所述感应层和粘附层时，因粘附层过厚导致LED芯粒脱落时受损。Then, by setting the thickness of the adhesive layer to be H and the height of the LED core to be H1, then H1<H<2H1, while ensuring that the LED array structure can be effectively bonded to the sensing layer through the adhesive layer, When the sensing layer and the adhesion layer are selectively destroyed through the mask and combined with the corresponding induction source, the LED chip is damaged when the adhesion layer is too thick and falls off.
进一步地，所述粘附层包括添加有感光剂和/或热敏剂的黏性材料，有利于吸收多余的光或热能，保护LED芯粒不受损伤，使其维持原有的光电性质。Further, the adhesive layer includes a viscous material added with photosensitizer and/or heat sensitizer, which is beneficial to absorb excess light or heat energy, protect the LED core from damage, and maintain the original photoelectric properties.
本发明还提供一种LED显示装置的制作方法，在实现上述技术效果的同时，其操作简单，易于实现。The present invention also provides a method for manufacturing an LED display device, which is simple in operation and easy to implement while achieving the above technical effects.
本发明还提供一种LED显示装置，采用上述转移方法形成，其结构简单、便于操作与实现。The present invention also provides an LED display device formed by the above-mentioned transfer method, which has a simple structure and is easy to operate and realize.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention, and those skilled in the art can also obtain other drawings according to the provided drawings without creative work.
图1为本发明实施例所提供的微型发光二极管的巨量转移方法的流程示意图；FIG. 1 is a schematic flow chart of a mass transfer method for micro light-emitting diodes provided by an embodiment of the present invention;
图2至图13为本发明实施例所提供的微型发光二极管的巨量转移方法所对应的结构示意图；2 to 13 are structural schematic diagrams corresponding to the mass transfer method of micro light emitting diodes provided by the embodiment of the present invention;
图中符号说明：100、生长基板；110、LED芯粒，170、掩膜，200、转移基板，210、第一光刻胶层，310、粘附层，320、感应层，500、目标基板，H、粘附层的厚度，H1、LED芯粒的高度，Y、感应源。Explanation of symbols in the figure: 100, growth substrate; 110, LED chip, 170, mask, 200, transfer substrate, 210, first photoresist layer, 310, adhesion layer, 320, sensing layer, 500, target substrate , H, the thickness of the adhesion layer, H1, the height of the LED chip, Y, the induction source.
具体实施方式Detailed ways
为使本发明的内容更加清晰，下面结合附图对本发明的内容作进一步说明。本发明不局限于该具体实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。In order to make the content of the present invention clearer, the content of the present invention will be further described below in conjunction with the accompanying drawings. The invention is not limited to this specific example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
如图1所示，一种微型发光二极管的巨量转移方法，包括如下步骤：As shown in Figure 1, a kind of mass transfer method of miniature light-emitting diode, comprises the following steps:
步骤S01、如图2或图3所示，提供一LED阵列结构，LED阵列结构包括生长基板100及在生长基板100表面形成的若干个呈阵列排布的LED芯粒110，各LED芯粒110包括水平结构LED芯粒110或垂直结构LED芯粒110；Step S01, as shown in FIG. 2 or FIG. 3 , an LED array structure is provided. The LED array structure includes a growth substrate 100 and a plurality of LED chips 110 arranged in an array formed on the surface of the growth substrate 100. Each LED chip 110 Including a horizontal structure LED chip 110 or a vertical structure LED chip 110;
其中，图2示意了垂直结构LED芯粒110的阵列结构，图3示意了水平结 构LED芯粒110的阵列结构；Wherein, Fig. 2 has shown the array structure of vertical structure LED chip 110, and Fig. 3 has shown the array structure of horizontal structure LED chip 110;
值得一提的是，生长基板100的类型在本实施例中不受限制，例如，生长基板100包括蓝宝石、碳化硅、硅、氮化镓、氮化铝、砷化镓中的任意一种；同时，LED芯粒110的具体结构及材料构成在本实施例中不受限制。It is worth mentioning that the type of the growth substrate 100 is not limited in this embodiment, for example, the growth substrate 100 includes any one of sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride, and gallium arsenide; Meanwhile, the specific structure and material composition of the LED chip 110 are not limited in this embodiment.
在上述实施例的基础上，在本申请一个实施例中，LED芯粒110至少包括在生长基板100表面依次堆叠的第一型半导体层、有源区及第二型半导体层，与第一型半导体层形成欧姆接触的第一电极，以及与第二型半导体层形成欧姆接触的第二电极；需要说明的是，第一型半导体层、有源区、第二型半导体层的具体材料类型在本实施例中也可以不受限制，例如，第一型半导体层可以是但不限于N-GaN层，相应地，第二型半导体层可以是但不限于P-GaN层；同时，第一电极和第二电极的具体设置位置亦不受限制，只要满足第一电极与第一型半导体层形成欧姆接触，第二电极与第二型半导体层形成欧姆接触即可；On the basis of the above-mentioned embodiments, in one embodiment of the present application, the LED chip 110 at least includes a first-type semiconductor layer, an active region, and a second-type semiconductor layer stacked sequentially on the surface of the growth substrate 100, and the first-type semiconductor layer A first electrode that forms an ohmic contact with the semiconductor layer, and a second electrode that forms an ohmic contact with the second-type semiconductor layer; it should be noted that the specific material types of the first-type semiconductor layer, the active region, and the second-type semiconductor layer are in This embodiment is also not limited, for example, the first type semiconductor layer can be but not limited to N-GaN layer, correspondingly, the second type semiconductor layer can be but not limited to P-GaN layer; meanwhile, the first electrode The specific location of the second electrode is not limited, as long as the first electrode forms an ohmic contact with the first-type semiconductor layer, and the second electrode forms an ohmic contact with the second-type semiconductor layer;
在上述实施例的基础上，在本申请一个实施例中，LED芯粒110为垂直结构LED芯粒110，此时，可通过导电性的生长基板100作为LED芯粒110的第一电极，如图2所示。On the basis of the above-mentioned embodiments, in one embodiment of the present application, the LED chip 110 is a vertical structure LED chip 110. At this time, the conductive growth substrate 100 can be used as the first electrode of the LED chip 110, such as Figure 2 shows.
步骤S02、如图4或图5所示，沉积一粘附层310，粘附层310覆盖各LED芯粒110背离生长基板100的一侧表面，并填充相邻LED芯粒110之间的间隙；Step S02, as shown in FIG. 4 or FIG. 5 , deposit an adhesion layer 310, the adhesion layer 310 covers the surface of each LED chip 110 facing away from the growth substrate 100, and fills the gap between adjacent LED chips 110 ;
其中，图4示意了在垂直结构LED芯粒110阵列表面沉积粘附层310，图5示意了在水平结构LED芯粒110阵列表面沉积粘附层310；Wherein, FIG. 4 illustrates the deposition of an adhesion layer 310 on the surface of an array of vertical structure LED chips 110, and FIG. 5 illustrates the deposition of an adhesion layer 310 on the surface of an array of horizontal structure LED chips 110;
值得一提的是，粘附层310的类型在本实施例中不受限制，例如，粘附层310包括紫外感光胶、硅胶、光刻胶、热熔胶、玻璃胶中的任意一种。It is worth mentioning that the type of the adhesive layer 310 is not limited in this embodiment, for example, the adhesive layer 310 includes any one of ultraviolet photosensitive adhesive, silica gel, photoresist, hot melt adhesive, and glass adhesive.
在上述实施例的基础上，在本申请一个实施例中，粘附层310包括添加有 感光剂和/或热敏剂的黏性材料。On the basis of the above embodiments, in one embodiment of the present application, the adhesive layer 310 includes an adhesive material added with a photosensitizer and/or a heat sensitizer.
步骤S03、如图6所示，提供一转移基板200，并在转移基板200的表面形成感应层320；Step S03, as shown in FIG. 6, providing a transfer substrate 200, and forming a sensing layer 320 on the surface of the transfer substrate 200;
值得一提的是，转移基板200的类型在本实施例中不受限制，例如，材料为蓝宝石、氮化镓、二氧化硅等中的任意一种，其中转移基板200的材料与生长基板100的材料可以相同亦可以不同。It is worth mentioning that the type of the transfer substrate 200 is not limited in this embodiment, for example, the material is any one of sapphire, gallium nitride, silicon dioxide, etc., wherein the material of the transfer substrate 200 is the same as that of the growth substrate 100 The materials can be the same or different.
需要说明的是，感应层320的类型在本实施例中不受限制，例如，感应层320包括热感应材料、紫外光感应材料、激光感应材料、辐射感应材料、等离子体感应材料、微波感应材料中的任意一种。It should be noted that the type of the sensing layer 320 is not limited in this embodiment, for example, the sensing layer 320 includes thermal sensing materials, ultraviolet light sensing materials, laser sensing materials, radiation sensing materials, plasma sensing materials, microwave sensing materials any of the.
步骤S04、如图7、图8所示，将步骤S03的转移基板200与步骤S02所形成的LED阵列结构键合，使粘附层310与感应层320形成粘接；Step S04, as shown in FIG. 7 and FIG. 8, bonding the transfer substrate 200 in step S03 to the LED array structure formed in step S02, so that the adhesive layer 310 and the sensing layer 320 are bonded;
其中，图7示意了将图4所示的垂直结构LED芯粒110阵列与图6所示的转移基板200进行对位键合；图8示意了将图5所示的水平结构LED芯粒110阵列与图6所示的转移基板200进行对位键合。Wherein, FIG. 7 illustrates the alignment bonding of the array of vertical structure LED chips 110 shown in FIG. 4 and the transfer substrate 200 shown in FIG. 6; FIG. The array is para-bonded to the transfer substrate 200 shown in FIG. 6 .
需要说明的是，键合工艺在本实施例中不受限制，例如，静电键合、热键合等。It should be noted that the bonding process is not limited in this embodiment, for example, electrostatic bonding, thermal bonding, and the like.
步骤S05、如图9、图10所示，去除生长基板100；Step S05, as shown in FIG. 9 and FIG. 10 , remove the growth substrate 100;
其中，图9示意了去除垂直结构LED芯粒110阵列的生长基板100；图10示意了去除水平结构LED芯粒110阵列的生长基板100。Wherein, FIG. 9 illustrates the growth substrate 100 with the array of vertical structure LED chips 110 removed; FIG. 10 illustrates the growth substrate 100 with the array of horizontal structure LED chips 110 removed.
在上述实施例的基础上，在本申请一个实施例中，去除生长基板100包括：利用激光剥离工艺，去除生长基板100，但本申请对此并不限定，在本申请其他实施例中，还可以利用其他去除工艺，去除生长基板100，具体视情况而定。On the basis of the above embodiments, in one embodiment of the present application, removing the growth substrate 100 includes: using a laser lift-off process to remove the growth substrate 100, but the present application is not limited to this, in other embodiments of the present application, The growth substrate 100 may be removed using other removal processes, depending on the circumstances.
步骤S06、如图13所示，通过掩膜并结合相应的感应源Y选择性破坏感应层320和粘附层310，使对应的LED芯粒110自然掉落至目标基板500。Step S06 , as shown in FIG. 13 , selectively destroys the sensing layer 320 and the adhesive layer 310 through a mask combined with the corresponding sensing source Y, so that the corresponding LED chips 110 naturally fall to the target substrate 500 .
需要说明的是，目标基板500的具体材料类型在本实施例中不受限制，只要满足自带粘性的材料层即可，例如，目标基板500包括蓝膜、薄膜、UV膜、热解粘膜、硅胶中的任意一种。It should be noted that the specific material type of the target substrate 500 is not limited in this embodiment, as long as it meets the requirements of a material layer with self-adhesiveness. For example, the target substrate 500 includes blue film, thin film, UV film, pyrolytic adhesive film, Any kind of silicone.
在上述实施例的基础上，在本申请一个实施例中，在第一衬底背离LED阵列一侧形成第一掩膜版，包括：On the basis of the above embodiments, in one embodiment of the present application, forming a first mask on the side of the first substrate away from the LED array includes:
如图13所示，在转移基板200背离LED芯粒110的一侧涂抹一层光刻胶，形成第一光刻胶层210；As shown in FIG. 13 , a layer of photoresist is applied on the side of the transfer substrate 200 away from the LED core 110 to form a first photoresist layer 210 ;
对第一光刻胶层210进行曝光、显影，在转移基板200背离LED芯粒110一侧形成第一光刻胶图形作为第一掩膜版。The first photoresist layer 210 is exposed and developed, and a first photoresist pattern is formed on the side of the transfer substrate 200 away from the LED chip 110 as a first mask.
在本申请实施例中，第一掩膜版包括透光区域和不透光区域，以便于后续通过第一掩膜版的透光区域对光感应材料层进行照射，使得光感应材料层对应第一掩膜版的透光区域的部分分解。In the embodiment of the present application, the first mask includes a light-transmitting area and an opaque area, so that the light-sensitive material layer can be irradiated through the light-transmitting area of the first mask, so that the light-sensitive material layer corresponds to the first mask. Partial decomposition of the light-transmitting region of a reticle.
需要说明的是，图13仅示意了对垂直结构LED芯粒110阵列进行掩膜并结合相应的感应源Y选择性破坏感应层320和粘附层310，使对应的LED芯粒110自然掉落至目标基板500；在本申请的其他实施例中，亦可对水平结构LED芯粒110阵列执行对应操作，不受限制。It should be noted that FIG. 13 only shows the masking of the array of vertical structure LED chips 110 and the selective destruction of the sensing layer 320 and the adhesion layer 310 in combination with the corresponding induction source Y, so that the corresponding LED chips 110 fall naturally. to the target substrate 500; in other embodiments of the present application, corresponding operations may also be performed on the array of horizontal structure LED chips 110, without limitation.
同时，本申请的实施例中并不限制感应源Y的类型，只要满足与感应层320的材料敏度对应，通过感应源Y可实现对感应层320破坏即可。Meanwhile, the embodiment of the present application does not limit the type of the sensing source Y, as long as it satisfies the sensitivity of the material of the sensing layer 320 , the sensing layer 320 can be destroyed by the sensing source Y.
在上述实施例的基础上，在本申请一个实施例中，粘附层310的厚度为H，LED芯粒110的高度为H1，则H1＜H＜2H1。On the basis of the above embodiments, in an embodiment of the present application, the thickness of the adhesive layer 310 is H, the height of the LED chip 110 is H1, then H1<H<2H1.
在上述实施例的基础上，在本申请一个实施例中，步骤S05还包括通过掩膜工艺将缺陷LED芯粒110与生长基板100同时去除，如图11、图12所示，其中对垂直结构LED芯粒110阵列进行掩膜170标记缺陷LED芯粒110后，将缺陷LED芯粒110与生长基板100同时去除；需要说明的是，在本申请的其他实施例中，亦可对水平结构LED芯粒110阵列进行掩膜将缺陷LED芯粒110与生长基板100同时去除，不受限制。同时，掩膜标记缺陷LED芯粒110的具体工艺亦不受限制，具体可参考步骤S06所示的掩膜工艺。On the basis of the above-mentioned embodiments, in one embodiment of the present application, step S05 also includes removing the defective LED chips 110 and the growth substrate 100 at the same time through a masking process, as shown in FIG. 11 and FIG. 12 , where the vertical structure After the array of LED chips 110 marks the defective LED chips 110 with a mask 170, the defective LED chips 110 and the growth substrate 100 are removed at the same time; it should be noted that in other embodiments of the present application, the horizontal structure LED The array of core particles 110 performs a mask to remove defective LED core particles 110 and the growth substrate 100 at the same time, without limitation. At the same time, the specific process of marking the defective LED chips 110 through a mask is not limited, and details can be referred to the masking process shown in step S06.
本实施例还提供了一种LED显示装置的制作方法，其采用上述任一项的微型发光二极管的巨量转移方法实现巨量转移。This embodiment also provides a method for manufacturing an LED display device, which adopts the mass transfer method of any one of the micro light-emitting diodes mentioned above to realize mass transfer.
本实施例还提供了一种LED显示装置，其采用上述的LED显示装置制作方法而制作形成。This embodiment also provides an LED display device, which is manufactured by using the above-mentioned LED display device manufacturing method.
经由上述的技术方案可知，本实施例提供的微型发光二极管的巨量转移方法，通过在各LED芯粒110背离生长基板100的一侧表面覆盖有粘附层310，并在转移基板200的表面形成感应层320；在转移过程中，通过键合使粘附层310与感应层320形成粘接，且感应层320位于粘附层310的上方；从而在后续通过掩膜并结合相应的感应源选择性破坏感应层320和粘附层310，使对应的LED芯粒110自然掉落至目标基板500时，破坏所示感应层320所产生的多余能量可被粘附层310吸收，继而有效保护LED芯粒110不受感应源如光、热、电磁波等的伤害。It can be seen from the above-mentioned technical solutions that in the mass transfer method of micro light emitting diodes provided in this embodiment, the surface of each LED chip 110 facing away from the growth substrate 100 is covered with an adhesive layer 310 , and the surface of the transfer substrate 200 is covered with an adhesive layer 310 . Forming the sensing layer 320; during the transfer process, the adhesive layer 310 is bonded to the sensing layer 320 by bonding, and the sensing layer 320 is located above the adhesive layer 310; thus passing through the mask and combining the corresponding sensing source Selectively destroy the sensing layer 320 and the adhesive layer 310, so that when the corresponding LED chips 110 naturally fall to the target substrate 500, the excess energy generated by destroying the sensing layer 320 can be absorbed by the adhesive layer 310, thereby effectively protecting The LED die 110 is not damaged by induction sources such as light, heat, electromagnetic waves and the like.
同时，由于感应层320的材料结构较为致密，在后续的清洗过程中需选择苛刻的物理、化学条件方可洗净LED芯粒110，然而苛刻的物理、化学条件势必会影响LED芯粒110的良率和电性；本发明提供的微型发光二极管的巨量转 移方法，通过将粘附层310直接接触并覆盖LED芯粒110可有效避免感应层320清洗的麻烦。At the same time, since the material structure of the sensing layer 320 is relatively dense, it is necessary to select harsh physical and chemical conditions to clean the LED core 110 in the subsequent cleaning process, but the harsh physical and chemical conditions will inevitably affect the performance of the LED core 110. Yield and electrical properties: The mass transfer method of micro light emitting diodes provided by the present invention can effectively avoid the trouble of cleaning the sensing layer 320 by directly contacting the adhesive layer 310 and covering the LED chips 110 .
其次，本实施例采用分开涂布感应层320和粘附层310，再利用粘附层310本身的粘力，结合物理键合的方式，一方面对感应层320和粘结层的涂布均匀性要求不高，生产成本低；另一方面可消除两者在涂布过程中产生的气泡。Secondly, in this embodiment, the sensing layer 320 and the adhesive layer 310 are coated separately, and the adhesive force of the adhesive layer 310 itself is used in combination with physical bonding. On the one hand, the sensing layer 320 and the adhesive layer are evenly coated. The performance requirements are not high, and the production cost is low; on the other hand, it can eliminate the air bubbles generated during the coating process.
然后，通过设置粘附层310的厚度为H，LED芯粒110的高度为H1，则H1＜H＜2H1，在确保LED阵列结构可通过粘附层310与感应层320有效键合的同时，避免在通过掩膜并结合相应的感应源选择性破坏感应层320和粘附层310时，因粘附层310过厚导致LED芯粒110脱落时受损。Then, by setting the thickness of the adhesive layer 310 to be H, and the height of the LED chip 110 to be H1, then H1<H<2H1, while ensuring that the LED array structure can be effectively bonded to the sensing layer 320 through the adhesive layer 310, Avoid damage to the LED core 110 when the adhesive layer 310 is too thick and the LED core 110 falls off when selectively destroying the sensing layer 320 and the adhesive layer 310 through a mask and in combination with a corresponding induction source.
进一步地，粘附层310包括添加有感光剂和/或热敏剂的黏性材料，有利于吸收多余的光或热能，保护LED芯粒110不受损伤，使其维持原有的光电性质。Furthermore, the adhesive layer 310 includes an adhesive material added with a photosensitizer and/or a heat sensitizer, which is beneficial to absorb excess light or heat energy, protect the LED core 110 from damage, and maintain its original photoelectric properties.
本实施例还提供一种LED显示装置的制作方法，在实现上述技术效果的同时，其操作简单，易于实现。This embodiment also provides a method for manufacturing an LED display device, which is simple in operation and easy to implement while achieving the above technical effects.
本实施例还提供一种LED显示装置，采用上述转移方法形成，其结构简单、便于操作与实现。This embodiment also provides an LED display device formed by the above-mentioned transfer method, which has a simple structure and is easy to operate and implement.
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。Each embodiment in this specification is described in a progressive manner, each embodiment focuses on the difference from other embodiments, and the same and similar parts of each embodiment can be referred to each other.
还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列 要素的物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括上述要素的物品或者设备中还存在另外的相同要素。It should also be noted that in this article, relational terms such as first and second etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that these entities or operations Any such actual relationship or order exists between. Moreover, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that an article or device comprising a set of elements includes not only those elements but also other elements not expressly listed, Or also include elements inherent in the article or device. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in an article or device comprising the aforementioned element.
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本申请。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本申请的精神或范围的情况下，在其它实施例中实现。因此，本申请将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the application. Therefore, the present application will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (11)

  1. 一种微型发光二极管的巨量转移方法，其特征在于，包括如下步骤：A method for mass transfer of miniature light-emitting diodes, characterized in that it comprises the steps of:
    步骤S01、提供一LED阵列结构，所述LED阵列结构包括生长基板及在所述生长基板表面形成的若干个呈阵列排布的LED芯粒，各所述LED芯粒包括水平结构LED芯粒或垂直结构LED芯粒；Step S01, providing an LED array structure, the LED array structure includes a growth substrate and several LED chips arranged in an array formed on the surface of the growth substrate, each of the LED chips includes a horizontal structure LED chip or Vertical structure LED chips;
    步骤S02、沉积一粘附层，所述粘附层覆盖各所述LED芯粒背离所述生长基板的一侧表面，并填充相邻LED芯粒之间的间隙；Step S02, depositing an adhesion layer, the adhesion layer covers the surface of each of the LED chips facing away from the growth substrate, and fills the gap between adjacent LED chips;
    步骤S03、提供一转移基板，并在所述转移基板的表面形成感应层；Step S03, providing a transfer substrate, and forming a sensing layer on the surface of the transfer substrate;
    步骤S04、将步骤S03所述的转移基板与步骤S02所形成的LED阵列结构键合，使所述粘附层与所述感应层形成粘接；Step S04, bonding the transfer substrate described in step S03 to the LED array structure formed in step S02, so that the adhesive layer is bonded to the sensing layer;
    步骤S05、去除所述生长基板；Step S05, removing the growth substrate;
    步骤S06、通过掩膜并结合相应的感应源选择性破坏所述感应层和粘附层，使对应的LED芯粒自然掉落至目标基板。Step S06 , selectively destroying the sensing layer and the adhesion layer through a mask and combining with corresponding sensing sources, so that the corresponding LED chips naturally fall to the target substrate.
  2. 根据权利要求1所述的微型发光二极管的巨量转移方法，其特征在于，所述粘附层的厚度为H，所述LED芯粒的高度为H1，则H1＜H＜2 H1。The mass transfer method of miniature light-emitting diodes according to claim 1, wherein the thickness of the adhesive layer is H, and the height of the LED chip is H1, then H1<H<2 H1.
  3. 根据权利要求1所述的微型发光二极管的巨量转移方法，其特征在于，所述粘附层包括添加有感光剂和/或热敏剂的黏性材料。The method for mass transfer of micro light emitting diodes according to claim 1, wherein the adhesive layer comprises an adhesive material added with a photosensitizer and/or a heat sensitizer.
  4. 根据权利要求1所述的微型发光二极管的巨量转移方法，其特征在于，所述粘附层包括紫外感光胶、硅胶、光刻胶、热熔胶、玻璃胶中的任意一种。The mass transfer method of micro light emitting diodes according to claim 1, wherein the adhesive layer comprises any one of ultraviolet photosensitive glue, silica gel, photoresist, hot melt glue, and glass glue.
  5. 根据权利要求1所述的微型发光二极管的巨量转移方法，其特征在于，所述感应层包括热感应材料、紫外光感应材料、激光感应材料、辐射感应材料、 等离子体感应材料、微波感应材料中的任意一种。The mass transfer method of micro light emitting diodes according to claim 1, wherein the sensing layer comprises heat sensing materials, ultraviolet light sensing materials, laser sensing materials, radiation sensing materials, plasma sensing materials, microwave sensing materials any of the.
  6. 根据权利要求1所述的微型发光二极管的巨量转移方法，其特征在于，所述目标基板为自带粘性的材料层，包括蓝膜、薄膜、UV膜、热解粘膜、硅胶中的任意一种。The mass transfer method of miniature light-emitting diodes according to claim 1, wherein the target substrate is a material layer with self-adhesiveness, including any one of blue film, thin film, UV film, pyrolytic adhesive film, and silica gel. kind.
  7. 根据权利要求1所述的微型发光二极管的巨量转移方法，其特征在于，所述步骤S05还包括通过掩膜工艺将缺陷LED芯粒与所述生长基板同时去除。The mass transfer method of micro light emitting diodes according to claim 1, wherein the step S05 further comprises removing defective LED chips and the growth substrate simultaneously through a masking process.
  8. 根据权利要求1所述的微型发光二极管的巨量转移方法，其特征在于，所述生长基板包括蓝宝石、碳化硅、硅、氮化镓、氮化铝、砷化镓中的任意一种。The mass transfer method of micro light emitting diodes according to claim 1, wherein the growth substrate comprises any one of sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride, and gallium arsenide.
  9. 根据权利要求1所述的微型发光二极管的巨量转移方法，其特征在于，所述LED芯粒至少包括在所述生长基板表面依次堆叠的第一型半导体层、有源区及第二型半导体层，与所述第一型半导体层形成欧姆接触的第一电极，以及与所述第二型半导体层形成欧姆接触的第二电极。The mass transfer method for miniature light-emitting diodes according to claim 1, wherein the LED chips at least include a first-type semiconductor layer, an active region, and a second-type semiconductor layer stacked sequentially on the surface of the growth substrate. layer, a first electrode forming ohmic contact with the first type semiconductor layer, and a second electrode forming ohmic contact with the second type semiconductor layer.
  10. 一种LED显示装置的制作方法，其特征在于，采用权利要求1至9任一项所述的微型发光二极管的巨量转移方法实现巨量转移。A method for manufacturing an LED display device, characterized in that the mass transfer method of micro light-emitting diodes described in any one of claims 1 to 9 is used to realize mass transfer.
  11. 一种LED显示装置，其特征在于，采用权利要求10所述的LED显示装置制作方法而制作形成。An LED display device, characterized in that it is manufactured by using the LED display device manufacturing method described in claim 10.
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