TWI712185B - Light emitting device, backlight module, light source module, and methods for preparing and use thereof - Google Patents

Light emitting device, backlight module, light source module, and methods for preparing and use thereof Download PDF

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TWI712185B
TWI712185B TW106126305A TW106126305A TWI712185B TW I712185 B TWI712185 B TW I712185B TW 106126305 A TW106126305 A TW 106126305A TW 106126305 A TW106126305 A TW 106126305A TW I712185 B TWI712185 B TW I712185B
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light
microbeads
emitting
layer
emitting chip
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TW201911604A (en
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吳裕朝
劉豔
吳冠辰
吳冠偉
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吳裕朝
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

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Abstract

A light emitting device is provided. The light emitting device includes a light emitting chip, a luminous layer and a light guiding layer. The light emitting chip includes a top surface and a side surface. The luminous layer forms over the top surface of the light emitting chip. The light guiding layer forms the side surface of the light emitting chip. The light guiding layer includes a plurality of luminous powders and a plurality of beads. Both of the light luminous layer and the light guiding layer do not included an adhesive. The present disclosure further provides a backlight module applying the light emitting device, a light source module applying the light emitting device, and a method for preparing the light emitting device. The side light leakage of the light emitting device could be reduced, and the luminous efficiency of light emitting device could be improved. In addition, the invention of the preparation technology is simple, and the cost is low.

Description

發光裝置、應用其的背光模組、光源模組及其製備方法Light emitting device, backlight module and light source module using the same, and preparation method thereof

本發明涉及一種發光裝置、應用其的背光模組、光源模組及其製備方法。The invention relates to a light-emitting device, a backlight module, a light source module and a preparation method thereof.

由於發光二極體（Light Emitting Diode，簡稱LED）具有高亮度、體積小、重量輕、不易破損、低耗電量和壽命長等優點，所以被廣泛地應用各式發光產品及顯示產品中。其發光原理主要是通過施加一電壓於二極體上，驅使二極體內的電子與電洞結合，結合所產生的能量以光的形式釋放出來。此外，習知的發光裝置主要通過對發光二挺極體晶粒的表面進行改性，以調整發光波長（顏色）與強度。Because Light Emitting Diode (LED for short) has the advantages of high brightness, small size, light weight, resistance to damage, low power consumption and long life, it is widely used in various light emitting products and display products. The principle of light emission is to apply a voltage to the diode to drive the electrons in the diode to combine with holes, and the energy generated by the combination is released in the form of light. In addition, the conventional light-emitting device mainly modifies the surface of the light-emitting diode crystal grains to adjust the light-emitting wavelength (color) and intensity.

在發光二極體中的使用中，傳統方式主要是將發光粉混入樹脂中再塗布於發光二極體晶粒上。然而，這種改性方式不僅耗時耗材，而且會因為樹脂的存在導致發光粉混合不均勻，進而降低發光裝置的發光效率及發光均勻度，且降低其發光亮度。In the use of light-emitting diodes, the traditional way is mainly to mix the luminescent powder into resin and then coat the light-emitting diode crystal grains. However, this modification method not only consumes time and consumables, but also causes uneven mixing of luminescent powder due to the presence of resin, thereby reducing the luminous efficiency and luminous uniformity of the light-emitting device, and reducing its luminous brightness.

目前，為了改進發光粉混合不均勻問題，將發光粉粒與不含膠的溶劑混合，再將混合相塗布於發光晶片來製備發光裝置。然而，這種改性方式不易使發光粉完全且均勻包覆發光二極體晶粒的側面，易造成側面漏光，進而降低發光裝置的發光亮度及發光效率。At present, in order to improve the uneven mixing of luminescent powder, luminescent powder particles are mixed with a solvent without glue, and then the mixed phase is coated on a luminescent chip to prepare a luminescent device. However, this modification method is not easy for the luminescent powder to completely and uniformly cover the side surface of the light-emitting diode crystal grains, and it is easy to cause side light leakage, thereby reducing the luminous brightness and luminous efficiency of the light-emitting device.

鑒於以上內容，有必要提供一種減少側面漏光，並提高發光效率和發光亮度的發光裝置及其製備方法。In view of the above, it is necessary to provide a light-emitting device and a manufacturing method thereof that reduce side light leakage and improve light-emitting efficiency and brightness.

本發明還進一步提供一種應用所述發光裝置的背光模組及光源模組。The present invention further provides a backlight module and light source module using the light-emitting device.

一種發光裝置，包括： 一發光晶片，具有一上表面和一側面； 一發光層，形成於所述發光晶片的上表面；以及 一導光層，形成於所述發光晶片的側面，所述導光層包含複數個發光粉粒和複數個微珠。所述發光層和所述導光層不含黏合劑。A light-emitting device includes: a light-emitting chip having an upper surface and a side surface; a light-emitting layer formed on the upper surface of the light-emitting chip; and a light guide layer formed on the side surface of the light-emitting chip. The light layer includes a plurality of luminescent powder particles and a plurality of microbeads. The light-emitting layer and the light guide layer do not contain an adhesive.

在一實施例中，所述微珠的粒徑為5µm-600µm。In one embodiment, the particle size of the microbeads is 5 μm-600 μm.

在一實施例中，所述微珠包括反射型微珠、折射型微珠中的一種或它們之間的組合。In an embodiment, the microbeads include one of reflective microbeads and refractive microbeads or a combination thereof.

在一實施例中，所述反射型微珠包含金屬材料、金屬化合物材料中的一種或它們之間的組合。In an embodiment, the reflective microbeads comprise one of a metal material, a metal compound material, or a combination thereof.

在一實施例中，所述金屬材料包括鋁、銀或鎳，所述金屬化合物材料包括硫酸鋇。In an embodiment, the metal material includes aluminum, silver or nickel, and the metal compound material includes barium sulfate.

在一實施例中，所述導光層包括至少一層反射型微珠、至少一層折射型玻璃珠或它們之間的組合。所述至少一層反射型微珠與所述至少一層折射型微珠自所述發光晶片所放出的光徑方向依次排列。In an embodiment, the light guide layer includes at least one layer of reflective microbeads, at least one layer of refractive glass beads, or a combination thereof. The at least one layer of reflective microbeads and the at least one layer of refractive microbeads are sequentially arranged in the direction of the light path emitted from the light-emitting chip.

本發明還提供一種背光模組，包括： 一背板； 一如上所述的發光裝置，安裝於所述背板內；以及 一擴散板，安裝於所述背板上且位於所述發光裝置的上方。The present invention also provides a backlight module, including: a back plate; a light emitting device as described above, installed in the back plate; and a diffuser plate installed on the back plate and located on the light emitting device Above.

本發明還提供一種發光裝置的製備方法，其包括如下步驟： 提供複數個發光晶片，每一發光晶片具有一上表面和一下表面； 將所述發光晶片的下表面黏附於一擴張膜上； 將微珠均勻分散於所述發光晶片的上表面與相鄰所述發光晶片所形成的間隙中； 去除未黏附於所述擴張膜上的微珠； 將含發光粉粒的液體相施加於所述發光晶片的上表面及相鄰所述發光晶片所形成的間隙中，所述液體為不含膠的水或揮發性溶劑； 移除所述液體，以使所述發光粉粒及所述微珠凝結成塊，並形成發光層和導光層；以及 於相應位置切割，以使所述微珠負載於所述發光晶片的側面。The present invention also provides a method for manufacturing a light emitting device, which includes the following steps: providing a plurality of light emitting chips, each light emitting chip having an upper surface and a lower surface; adhering the lower surface of the light emitting chip to an expansion film; The microbeads are uniformly dispersed in the gap formed by the upper surface of the light-emitting chip and the adjacent light-emitting chip; remove the microbeads that are not adhered to the expansion film; apply a liquid phase containing light-emitting powder to the The upper surface of the light-emitting chip and the gap formed by the adjacent light-emitting chip, the liquid is glue-free water or a volatile solvent; remove the liquid to make the light-emitting powder particles and the beads Agglomerate to form a light-emitting layer and a light-guiding layer; and cutting at corresponding positions so that the microbeads are loaded on the side surface of the light-emitting chip.

在一實施例中，所述微珠包括反射型微珠、折射型微珠中的一種或它們之間的組合。In an embodiment, the microbeads include one of reflective microbeads and refractive microbeads or a combination thereof.

在一實施例中，在所述步驟將含發光粉粒的液體相施加於所述發光晶片的上表面及相鄰所述發光晶片所形成的間隙前，還包括向所述含發光粉粒的液體相中添加所述折射型微珠。In one embodiment, before applying the liquid phase containing luminescent powder particles to the upper surface of the light-emitting chip and the gap formed by the adjacent light-emitting chips, the step further includes The refractive microbeads are added to the liquid phase.

在一實施例中，當所述微珠的粒徑大於等於所述發光晶片的厚度時，所述發光晶片的側面負載至少一層所述微珠。當所述微珠的粒徑小於所述發光晶片的厚度時，所述發光晶片的側面負載多層所述微珠。In an embodiment, when the particle size of the microbeads is greater than or equal to the thickness of the light-emitting chip, the side surface of the light-emitting chip supports at least one layer of the microbeads. When the particle size of the microbeads is smaller than the thickness of the light-emitting chip, the side surface of the light-emitting chip supports multiple layers of the microbeads.

本發明還進一步提供另一種發光裝置的製備方法，其包括如下步驟： 提供複數個發光晶片，每一發光晶片具有一上表面和一下表面； 將所述發光晶片的下表面形成於一基底上； 將含微珠、發光粉粒的液體相施加於所述發光晶片的上表面及相鄰所述發光晶片所形成的間隙中，所述液體為不含膠的水或揮發性溶劑，所述微珠為折射型微珠； 移除所述液體，以使所述發光粉粒及所述微珠凝結成塊，並形成發光層和導光層；以及 於相應位置切割，以使所述微珠負載於所述發光晶片的側面。The present invention further provides another method for manufacturing a light-emitting device, which includes the following steps: providing a plurality of light-emitting chips, each light-emitting chip having an upper surface and a lower surface; forming the lower surface of the light-emitting chip on a substrate; A liquid phase containing microbeads and luminescent powder particles is applied to the upper surface of the light-emitting chip and the gap formed by the adjacent light-emitting chip. The liquid is glue-free water or a volatile solvent. The beads are refractive microbeads; the liquid is removed to make the luminescent powder particles and the microbeads agglomerate to form a light-emitting layer and a light guide layer; and cut at corresponding positions to make the microbeads Loaded on the side of the light-emitting chip.

在一實施例中，當所述微珠的粒徑大於等於所述發光晶片的厚度時，所述發光晶片的側面負載至少一層所述微珠。當所述微珠的粒徑小於所述發光晶片的厚度時，所述發光晶片的側面負載多層所述微珠。In an embodiment, when the particle size of the microbeads is greater than or equal to the thickness of the light-emitting chip, the side surface of the light-emitting chip supports at least one layer of the microbeads. When the particle size of the microbeads is smaller than the thickness of the light-emitting chip, the side surface of the light-emitting chip supports multiple layers of the microbeads.

本發明還提供一種光源模組，包括： 一基板； 至少一第一電極，安裝於所述基板上；以及 至少一如上所述的發光裝置，每一發光該裝置的下表面設有兩相對的第二電極，所述第二電極電性連接所述第一電極。The present invention also provides a light source module, including: a substrate; at least one first electrode mounted on the substrate; and at least one light emitting device as described above, each light emitting device is provided with two opposite The second electrode is electrically connected to the first electrode.

在一實施例中，所述光源模組還包括一透鏡，所述透鏡形成於所述發光裝置的上方。In one embodiment, the light source module further includes a lens, and the lens is formed above the light emitting device.

在一實施例中，所述光源模組還包括一反光杯，所述至少一發光裝置設置於所述反射杯內。In an embodiment, the light source module further includes a reflector cup, and the at least one light-emitting device is disposed in the reflector cup.

相較於習知技術，本發明的發光裝置，通過將發光粉粒與微珠混合以製得導光層，再將導光層包覆所述發光晶片的側面，以使所述發光晶片於側面發出的光線經由所述微珠導向發光層，從而降低的所述發光裝置的側面漏光問題。此外，由於所述導光層和所述發光層不具有黏合劑，且所述微珠具有折射或反射功能，因此能夠進一步提供發光裝置的發光效率及發光亮度。本發明發光裝置的製備方法通過採用不含黏合劑的液體混合相與螢光粉粒混合，再將混合液體塗布所述發光晶片，工藝簡單，成本低廉。採用上述發光裝置的背光模組，其發光效率和發光亮度較高。Compared with the prior art, the light-emitting device of the present invention mixes light-emitting powder particles with microbeads to prepare a light-guiding layer, and then covering the side of the light-emitting chip with the light-guiding layer, so that the light-emitting chip is The light emitted from the side is guided to the light-emitting layer via the microbeads, thereby reducing the problem of light leakage from the side of the light-emitting device. In addition, since the light guide layer and the light-emitting layer do not have an adhesive, and the microbeads have a function of refraction or reflection, the luminous efficiency and luminous brightness of the light-emitting device can be further improved. The preparation method of the light-emitting device of the present invention adopts a liquid mixed phase that does not contain a binder to mix with phosphor particles, and then coats the light-emitting chip with the mixed liquid. The process is simple and the cost is low. The backlight module adopting the above-mentioned light-emitting device has high light-emitting efficiency and light-emitting brightness.

為了簡明清楚地進行說明，在恰當的地方，相同的標號在不同圖式中被重複地用於標示對應的或相類似的元件。此外，為了提供對此處所描述實施例全面深入的理解，說明書中會提及許多特定的細節。然而，本領域技術人員可以理解的是此處所記載的實施例也可以不按照這些特定細節進行操作。在其他的一些情況下，為了不使正在被描述的技術特徵混淆不清，一些方法、流程及元件並未被詳細地描述。圖式並不一定需要與實物的尺寸等同。為了更好地說明細節及技術特徵，圖式中特定部分的展示比例可能會被放大。說明書中的描述不應被認為是對此處所描述的實施例範圍的限定。In order to make the description concise and clear, where appropriate, the same reference numerals are repeatedly used in different drawings to indicate corresponding or similar components. In addition, in order to provide a comprehensive and in-depth understanding of the embodiments described herein, many specific details are mentioned in the specification. However, those skilled in the art can understand that the embodiments described herein may not be operated in accordance with these specific details. In some other cases, in order not to confuse the technical features being described, some methods, processes, and components have not been described in detail. The diagram does not necessarily need to be the same as the actual size. In order to better illustrate the details and technical features, the display scale of certain parts in the drawings may be enlarged. The description in the specification should not be considered as limiting the scope of the embodiments described herein.

請參閱圖1，本發明第一實施例的發光裝置100的剖視圖。所述發光裝置100包括一發光晶片10、一發光層20、一導光層30及一保護層40。所述發光晶片10具有一上表面11、一下表面12和一側面13。所述發光層20形成於所述發光晶片10的上表面11。所述導光層30形成於所述發光晶片10的側面13。所述保護層40包覆所述發光層20和所述導光層30。Please refer to FIG. 1, a cross-sectional view of a light emitting device 100 according to a first embodiment of the present invention. The light emitting device 100 includes a light emitting chip 10, a light emitting layer 20, a light guide layer 30 and a protective layer 40. The light-emitting chip 10 has an upper surface 11, a lower surface 12 and a side surface 13. The light-emitting layer 20 is formed on the upper surface 11 of the light-emitting chip 10. The light guide layer 30 is formed on the side surface 13 of the light-emitting chip 10. The protective layer 40 covers the light emitting layer 20 and the light guide layer 30.

所述發光晶片10的厚度為90µm-600µm 。所述發光層20的厚度為10µm-650µm。所述發光層20包含複數個發光粉粒21。The thickness of the light-emitting chip 10 is 90 μm-600 μm. The thickness of the light-emitting layer 20 is 10 μm-650 μm. The light-emitting layer 20 includes a plurality of light-emitting powder particles 21.

所述發光粉粒21能夠吸收所述發光晶片10發出的光而形成特定顏色的光。進一步的，所述發光晶片發出的未被所述發光粉粒21吸收的光能夠與所述發光粉粒21所發出的光混合形成用戶所需的顏色光。The light-emitting powder particles 21 can absorb the light emitted by the light-emitting chip 10 to form light of a specific color. Further, the light emitted by the light-emitting chip that is not absorbed by the light-emitting powder particles 21 can be mixed with the light emitted by the light-emitting powder particles 21 to form color light required by the user.

可以理解的，為了使所述發光粉粒21均勻地分散於所述發光層20，所述發光層20不含黏合劑（膠），從而使所述發光粉粒21能夠均勻地分散於所述發光晶片10的周圍。所述黏合劑例如是環氧樹脂、有機聚合物、矽膠材料等。It is understandable that in order to make the luminescent powder particles 21 uniformly dispersed in the luminescent layer 20, the luminescent layer 20 does not contain a binder (glue), so that the luminescent powder particles 21 can be uniformly dispersed in the Around the light emitting chip 10. The adhesive is, for example, epoxy resin, organic polymer, silicone material, etc.

在本實施例中，所述發光粉粒21包括螢光粉。In this embodiment, the luminescent powder particles 21 include phosphors.

所述螢光粉例如是硫化物螢光粉或非硫化物螢光粉。所述非硫化物螢光粉例如是，但不局限於，釔鋁石榴石螢光粉（Yttrium Aluminum Garnet，簡稱YAG）、鋱鋁石榴石螢光粉（Terbium Aluminum Garnet，簡稱TAG）、氮化物或矽酸鹽中的一種或它們之間的組合。The phosphor is, for example, a sulfide phosphor or a non-sulfide phosphor. The non-sulfide phosphor is, for example, but not limited to, Yttrium Aluminum Garnet (YAG for short), Terbium Aluminum Garnet (TAG for short), nitride or silicate One or a combination of them.

所述導光層30的厚度均為10µm-650µm 。所述導光層30包含複數個發光粉粒31和複數個微珠32。所述導光層30也不含黏合劑。所述黏合劑例如是環氧樹脂、有機聚合物、矽膠材料等。The thickness of the light guide layer 30 is 10 μm-650 μm. The light guide layer 30 includes a plurality of luminescent powder particles 31 and a plurality of microbeads 32. The light guide layer 30 also contains no adhesive. The adhesive is, for example, epoxy resin, organic polymer, silicone material, etc.

可以理解的，所述導光層30的發光粉粒31與所述發光層20的發光粉粒21的組分和功能相同，在此不再贅述。It is understandable that the composition and function of the luminescent powder particles 31 of the light guide layer 30 and the luminescent powder particles 21 of the luminescent layer 20 are the same, and will not be repeated here.

所述微珠32包括反射型微珠34（參圖2）、折射型微珠33（參圖2）中的一種或它們之間的組合。所述反射型微珠34例如是反射型玻璃微珠或反射型陶瓷微珠。所述折射型微珠33為折射型玻璃微珠及折射型陶瓷微珠。所述折射型玻璃微珠的折射率為1.5-2.5。所述反射型玻璃微珠包含金屬材料、金屬化合物材料中的一種或它們之間的組合。The microbeads 32 include one of reflective microbeads 34 (refer to FIG. 2) and refractive microbeads 33 (refer to FIG. 2) or a combination thereof. The reflective microbeads 34 are, for example, reflective glass beads or reflective ceramic beads. The refractive microbeads 33 are refractive glass microbeads and refractive ceramic microbeads. The refractive index of the refractive glass beads is 1.5-2.5. The reflective glass beads comprise one of metal materials and metal compound materials or a combination between them.

可以理解的，在其他實施例中，所述反射型玻璃微珠還能夠直接於其本體的表面鍍有金屬材料、金屬化合物材料中的一種或它們之間的組合。所述金屬材料包括鋁、銀或鎳。所述金屬化合物材料包括硫酸鋇。所述金屬材料、金屬化合物材料或其組合通過採用電鍍、真空鍍膜或粉體表面包覆法形成於所述反射型玻璃微珠的表面，從而使得所述反射型玻璃微珠的表面光滑，進而增加反射率，此外還能增加熱導率並且幫助散熱。It is understandable that in other embodiments, the reflective glass beads can also be directly plated on the surface of the body with one of a metal material, a metal compound material, or a combination thereof. The metal material includes aluminum, silver or nickel. The metal compound material includes barium sulfate. The metal material, metal compound material or a combination thereof is formed on the surface of the reflective glass beads by electroplating, vacuum coating or powder surface coating, so that the surface of the reflective glass beads is smooth, and then Increase the reflectivity, in addition to increase the thermal conductivity and help heat dissipation.

所述折射型微珠和所述反射型微珠包含氧化铝(Al2 O3 )、氮化铝(AlN)、二氧化矽(SiO2 )、碳化矽(SiC)、氧化锆(ZrO3 )、矽(Si)、金剛石(C)、氮化硼(NB)、碳化硼(C4 B)及氧化硼(B2 O3 )中的一種或它們之間的組合。The refractive microbeads and the reflective microbeads include aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), silicon dioxide (SiO 2 ), silicon carbide (SiC), and zirconium oxide (ZrO 3 ) , Silicon (Si), diamond (C), boron nitride (NB), boron carbide (C 4 B) and boron oxide (B 2 O 3 ) or a combination of them.

可以理解的，所述反射型陶瓷微珠自身具反射光的能力，所述折射型陶瓷微珠具有透射能力。進一步的，所述反射型陶瓷微珠能夠在其表面附加金屬材料、金屬化合物材料中的一種或它們之間的組合。所述金屬材料包括鋁、銀或鎳。所述金屬化合物材料包括硫酸鋇。所述金屬材料、金屬化合物材料或其組合通過採用電鍍、真空鍍膜或粉體表面包覆法形成於所述反射型陶瓷微珠的表面，從而使得所述反射型陶瓷微珠的表面光滑，進而增加反射率，此外還能增加熱導率並且幫助散熱。It is understandable that the reflective ceramic microspheres have the ability to reflect light, and the refractive ceramic microspheres have the transmittance ability. Further, the reflective ceramic microbeads can be added with one of metal materials and metal compound materials or a combination thereof on the surface thereof. The metal material includes aluminum, silver or nickel. The metal compound material includes barium sulfate. The metal material, metal compound material or a combination thereof is formed on the surface of the reflective ceramic beads by electroplating, vacuum coating or powder surface coating, so that the surface of the reflective ceramic beads is smooth, and Increase the reflectivity, in addition to increase the thermal conductivity and help heat dissipation.

可以理解的，為了達到增加發光強度的效果，所述微珠32的材質對於發光晶片10所發出的光(如藍光)具有高透光率。 可以理解的，為了降低所述發光晶片10的側面漏光問題，並提高所述發光晶片10的發光效率和發光亮度，所述發光粉粒31與所述微珠32的重量比為5:100-50:100。It is understandable that, in order to achieve the effect of increasing the luminous intensity, the material of the microbeads 32 has a high transmittance to the light (such as blue light) emitted by the light-emitting chip 10. It is understandable that, in order to reduce the problem of light leakage from the side of the light-emitting chip 10 and improve the luminous efficiency and brightness of the light-emitting chip 10, the weight ratio of the light-emitting powder particles 31 to the microbeads 32 is 5:100- 50:100.

所述發光粉粒31的粒徑為0.1µm-100µm。所述微珠32的粒徑為5µm-600µm。The particle diameter of the luminescent powder particles 31 is 0.1 μm-100 μm. The particle size of the microbeads 32 is 5 μm-600 μm.

在本實施例中，所述微珠32為反射型玻璃微珠，所述導光層30具有一層所述反射型玻璃微珠。所述反射型玻璃微珠黏附於所述發光晶片10的側面10。所述反射型玻璃微珠的粒徑大於等於所述導光層30的厚度，因此所述發光晶片10於側面發出的光線大部分經由所述反射型玻璃微珠反射至所述發光層20，從而大大降低了所述發光晶片10於所述側面13發出光線，進而提高所述發光裝置100的發光效率和發光亮度。In this embodiment, the microbeads 32 are reflective glass microbeads, and the light guide layer 30 has a layer of the reflective glass microbeads. The reflective glass beads are adhered to the side surface 10 of the light-emitting chip 10. The particle size of the reflective glass beads is greater than or equal to the thickness of the light guide layer 30, so most of the light emitted from the side of the light emitting chip 10 is reflected to the light emitting layer 20 through the reflective glass beads. As a result, the light emitted by the light emitting chip 10 on the side surface 13 is greatly reduced, and the light emitting efficiency and brightness of the light emitting device 100 are improved.

可以理解的，所述微珠32包括實心微珠、空心微珠中的一種或它們之間的組合。所述微珠32可以是透明的或是具有色彩。所述微珠32具有光潔且圓整之表面，所述微珠32呈球形、橢球形、方形或其他形狀。It can be understood that the microbeads 32 include one of solid microbeads, hollow microbeads, or a combination thereof. The microbeads 32 may be transparent or colored. The microbeads 32 have a smooth and round surface, and the microbeads 32 are spherical, ellipsoidal, square or other shapes.

為了提高發光效率和發光亮度，所述微珠32優選為球形。In order to improve luminous efficiency and luminous brightness, the microbeads 32 are preferably spherical.

為了避免發光層20和所述導光層30的表面受刮擦，在所述發光層20和所述導光層30的表面形成有至少一所述保護層40。其中，所述保護層40包覆所述發光層20的上表面和側面，並延伸包覆所述導光層30的上表面和側面。In order to prevent the surfaces of the light-emitting layer 20 and the light guide layer 30 from being scratched, at least one protective layer 40 is formed on the surfaces of the light-emitting layer 20 and the light guide layer 30. Wherein, the protective layer 40 covers the upper surface and side surfaces of the light-emitting layer 20 and extends to cover the upper surface and side surfaces of the light guide layer 30.

可以理解的，所述保護層40為高分子材料層，以使所述發光層20和所述導光層30與外界隔絕，從而避免外界的影響與污染。所述高分子材料例如是樹脂、矽膠或是材質較軟的其他材料。所述樹脂可例如是硬化劑混合比例較低的環氧樹脂。優選的，所述硬化劑和所述環氧樹脂的品質混合比例為1:1或1:4。It can be understood that the protective layer 40 is a polymer material layer to isolate the light-emitting layer 20 and the light guide layer 30 from the outside, thereby avoiding external influence and pollution. The polymer material is, for example, resin, silicone, or other soft materials. The resin may be, for example, an epoxy resin with a relatively low mixing ratio of hardeners. Preferably, the quality mixing ratio of the hardener and the epoxy resin is 1:1 or 1:4.

請參閱圖2，展示了本發明第二實施例的發光裝置200的剖視圖。所述發光裝置200包括一發光晶片10、一發光層20、一導光層30及一保護層40。本實施例提供的發光裝置200與第一實施例的發光裝置100的結構基本一致。不同的是，所述發光層20包含複數個發光粉粒21和複數個微珠22，所述導光層30具有多層微珠32，所述多層微珠32包括至少一層反射型微珠34及至少一層折射型微珠33，及所述微珠32的粒徑小於所述發光晶片10的厚度。Please refer to FIG. 2, which shows a cross-sectional view of a light emitting device 200 according to a second embodiment of the present invention. The light emitting device 200 includes a light emitting chip 10, a light emitting layer 20, a light guide layer 30 and a protective layer 40. The structure of the light-emitting device 200 provided in this embodiment is basically the same as that of the light-emitting device 100 of the first embodiment. The difference is that the light-emitting layer 20 includes a plurality of light-emitting powder particles 21 and a plurality of microbeads 22, the light guide layer 30 has a plurality of microbeads 32, the multi-layer microbeads 32 includes at least one layer of reflective microbeads 34 and At least one layer of refractive microbeads 33 and the particle size of the microbeads 32 are smaller than the thickness of the light-emitting chip 10.

在本實施例中，所述發光層20的微珠22為所述折射型玻璃微珠。因此，所述發光晶片10發出的光線能夠更集中朝所述發光裝置200的外界照射，從而提高其發光亮度和發光效率。In this embodiment, the beads 22 of the light-emitting layer 20 are the refractive glass beads. Therefore, the light emitted by the light-emitting chip 10 can be irradiated to the outside of the light-emitting device 200 more concentratedly, thereby improving its light-emitting brightness and light-emitting efficiency.

所述反射型微珠34和所述反射型微珠34黏附於所述發光晶片10的側面13。The reflective microbeads 34 and the reflective microbeads 34 are adhered to the side surface 13 of the light-emitting chip 10.

可以理解的，為了使所述發光晶片10於其側面13發出的光線能夠更多朝所述發光層20照射，所述至少一層反射型微珠34與所述至少一層折射型微珠33自所述發光晶片10所放出的光徑方向依次排列，也即所述至少一層折射型微珠33位於所述至少一層反射型微珠34的上方。 請參閱圖3，展示了本發明第三實施例的發光裝置300的剖視圖。所述發光裝置300包括一發光晶片10、一發光層20、一導光層30及一保護層40。本實施例提供的發光裝置300與第一實施例的發光裝置100的結構基本一致。不同的是，所述發光層20包含複數個發光粉粒21和複數個微珠22，所述導光層30具有一層折射型微珠33，及所述折射型微珠33的粒徑大於等於所述發光晶片10的厚度。It is understandable that, in order to enable the light emitted from the side 13 of the light-emitting chip 10 to irradiate more toward the light-emitting layer 20, the at least one layer of reflective microbeads 34 and the at least one layer of refractive microbeads 33 are separated from each other. The light path directions emitted from the light-emitting chip 10 are arranged in sequence, that is, the at least one layer of refractive microbeads 33 is located above the at least one layer of reflective microbeads 34. Please refer to FIG. 3, which shows a cross-sectional view of a light emitting device 300 according to a third embodiment of the present invention. The light emitting device 300 includes a light emitting chip 10, a light emitting layer 20, a light guide layer 30 and a protective layer 40. The structure of the light-emitting device 300 provided in this embodiment is basically the same as that of the light-emitting device 100 of the first embodiment. The difference is that the light-emitting layer 20 includes a plurality of light-emitting powder particles 21 and a plurality of microbeads 22, the light guide layer 30 has a layer of refractive microbeads 33, and the diameter of the refractive microbeads 33 is greater than or equal to The thickness of the light-emitting chip 10.

在本實施例中，所述發光層20中的微珠22為所述折射型玻璃微珠。因此，所述發光晶片10發出的光線能夠更集中朝所述發光裝置200的外界照射，從而提高其發光亮度和發光效率。In this embodiment, the beads 22 in the light-emitting layer 20 are the refractive glass beads. Therefore, the light emitted by the light-emitting chip 10 can be irradiated to the outside of the light-emitting device 200 more concentratedly, thereby improving its light-emitting brightness and light-emitting efficiency.

可以理解的，為了使所述發光晶片10於其側面13發出的光線能夠更多朝所述發光層20方向照射，所述折射型微珠33黏附於所述發光晶片10的側面13。It is understandable that, in order to make the light emitted from the side surface 13 of the light-emitting chip 10 irradiate more toward the light-emitting layer 20, the refractive bead 33 is adhered to the side surface 13 of the light-emitting chip 10.

請參閱圖4，展示了本發明第四實施例的發光裝置400的剖視圖。所述發光裝置400包括一發光晶片10、一發光層20、一導光層30及一保護層40。本實施例提供的發光裝置400與第一實施例的發光裝置100的結構基本一致。不同的是，所述發光層20包含複數個發光粉粒21和複數個微珠22，所述導光層30具有至少兩層折射型微珠33，及所述折射型微珠33的粒徑小於所述發光晶片10的厚度。Please refer to FIG. 4, which shows a cross-sectional view of a light emitting device 400 according to a fourth embodiment of the present invention. The light-emitting device 400 includes a light-emitting chip 10, a light-emitting layer 20, a light guide layer 30 and a protective layer 40. The structure of the light emitting device 400 provided in this embodiment is basically the same as that of the light emitting device 100 of the first embodiment. The difference is that the light-emitting layer 20 includes a plurality of light-emitting powder particles 21 and a plurality of microbeads 22, the light guide layer 30 has at least two layers of refractive microbeads 33, and the size of the refractive microbeads 33 It is smaller than the thickness of the light-emitting chip 10.

在本實施例中，所述發光層20中的微珠22為所述折射型玻璃微珠。因此，所述發光晶片10發出的光線能夠更集中朝所述發光裝置200的外界照射，從而提高其發光亮度和發光效率。In this embodiment, the beads 22 in the light-emitting layer 20 are the refractive glass beads. Therefore, the light emitted by the light-emitting chip 10 can be irradiated to the outside of the light-emitting device 200 more concentratedly, thereby improving its light-emitting brightness and light-emitting efficiency.

所述折射型微珠33黏附於所述發光晶片10的側面13。The refractive bead 33 is adhered to the side surface 13 of the light-emitting chip 10.

可以理解的，為了使所述發光晶片10於其側面13發出的光線能夠更多朝所述發光層20方向照射，所述折射型微珠33自所述發光晶片10所放出的光徑方向依次排列。It is understandable that, in order to make the light emitted from the side surface 13 of the light-emitting chip 10 irradiate more toward the light-emitting layer 20, the refractive microbeads 33 are sequentially emitted from the direction of the light path emitted by the light-emitting chip 10. arrangement.

請參閱圖5，展示了本發明第五實施例的發光裝置500的剖視圖。所述發光裝置500包括一發光晶片10、一發光層20及一導光層30。所述發光晶片10、所述發光層20及所述導光層30與第三實施例的發光裝置300的結構基本一致。不同的是，所述發光層20與所述導光層30的表面未形成保護層40（參圖3），從而避免所述保護層40（參圖3）因受熱黃化而降低所述發光晶片10的發光效率及減少其使用壽命。Please refer to FIG. 5, which shows a cross-sectional view of a light emitting device 500 according to a fifth embodiment of the present invention. The light emitting device 500 includes a light emitting chip 10, a light emitting layer 20 and a light guide layer 30. The structures of the light-emitting chip 10, the light-emitting layer 20, and the light guide layer 30 are basically the same as those of the light-emitting device 300 of the third embodiment. The difference is that the protective layer 40 (refer to FIG. 3) is not formed on the surface of the light-emitting layer 20 and the light guide layer 30, so as to prevent the protective layer 40 (refer to FIG. 3) from being yellowed by heating and reducing the light emission. The luminous efficiency of the chip 10 and its service life are reduced.

在本實施例中，所述發光層20中的微珠22為所述折射型玻璃微珠。因此，所述發光晶片10發出的光線能夠更集中朝所述發光裝置500的外界照射，從而提高其發光亮度和發光效率。In this embodiment, the beads 22 in the light-emitting layer 20 are the refractive glass beads. Therefore, the light emitted by the light-emitting chip 10 can be more concentratedly irradiated toward the outside of the light-emitting device 500, thereby improving its luminous brightness and luminous efficiency.

所述折射型微珠33粘附於所述發光晶片10的側面13。 可以理解的，為了使所述發光晶片10於其側面13發出的光線能夠更多朝所述發光層20方向照射，所述折射型微珠33自所述發光晶片10所放出的光徑方向依次排列。The refractive microbeads 33 are adhered to the side surface 13 of the light-emitting chip 10. It is understandable that, in order to make the light emitted from the side surface 13 of the light-emitting chip 10 irradiate more toward the light-emitting layer 20, the refractive microbeads 33 are sequentially emitted from the direction of the light path emitted by the light-emitting chip 10. arrangement.

請參閱圖6，展示了本發明第六實施例的發光裝置600的剖視圖。所述發光裝置600包括一發光晶片10、一發光層20及一導光層30。所述發光晶片10、所述發光層20及所述導光層30與第四實施例的發光裝置400的結構基本一致。不同的是，所述發光層20與所述導光層30的表面未形成保護層40（參圖4），從而避免所述保護層40（參圖4）因受熱黃化而降低所述發光晶片10的發光效率及減少其使用壽命。Please refer to FIG. 6, which shows a cross-sectional view of a light emitting device 600 according to a sixth embodiment of the present invention. The light emitting device 600 includes a light emitting chip 10, a light emitting layer 20 and a light guide layer 30. The structure of the light emitting chip 10, the light emitting layer 20, and the light guide layer 30 is basically the same as that of the light emitting device 400 of the fourth embodiment. The difference is that the protective layer 40 (refer to FIG. 4) is not formed on the surface of the light-emitting layer 20 and the light guide layer 30, so as to prevent the protective layer 40 (refer to FIG. 4) from being yellowed by heating and reducing the light emission. The luminous efficiency of the chip 10 and its service life are reduced.

在本實施例中，所述發光層20中的微珠22為所述折射型玻璃微珠。因此，所述發光晶片10發出的光線能夠更集中朝所述發光裝置600的外界照射，從而提高其發光亮度和發光效率。In this embodiment, the beads 22 in the light-emitting layer 20 are the refractive glass beads. Therefore, the light emitted by the light-emitting chip 10 can be more concentrated toward the outside of the light-emitting device 600, thereby improving its luminous brightness and luminous efficiency.

所述折射型微珠33粘附於所述發光晶片10的側面13。The refractive microbeads 33 are adhered to the side surface 13 of the light-emitting chip 10.

可以理解的，為了使所述發光晶片10於其側面13發出的光線能夠更多朝所述發光層20方向照射，所述折射型微珠33自所述發光晶片10所放出的光徑方向依次排列。It is understandable that, in order to make the light emitted from the side surface 13 of the light-emitting chip 10 irradiate more toward the light-emitting layer 20, the refractive microbeads 33 are sequentially emitted from the direction of the light path emitted by the light-emitting chip 10. arrangement.

請參閱圖7，展示了本發明第一實施方式的光源模組700的示意圖。所述光源模組700包括一基板1、至少一第一電極3、至少一第二電極5以及上述第一實施例的至少一發光裝置100（參圖1）。所述至少一第一電極3間隔地設置於所述基板1上。每一發光晶片10的下表面12設有兩相對的第二電極5。所述第一電極3電性連接所述第二電極5。Please refer to FIG. 7, which shows a schematic diagram of a light source module 700 according to the first embodiment of the present invention. The light source module 700 includes a substrate 1, at least one first electrode 3, at least one second electrode 5, and at least one light-emitting device 100 of the first embodiment (refer to FIG. 1). The at least one first electrode 3 is arranged on the substrate 1 at intervals. The lower surface 12 of each light-emitting chip 10 is provided with two opposite second electrodes 5. The first electrode 3 is electrically connected to the second electrode 5.

可以理解的，在其他實施例中，所述至少一發光裝置100還可以選自上述第一實施例至第六實施例中的發光裝置中的一種或他們之間的組合。It is understandable that in other embodiments, the at least one light-emitting device 100 may also be selected from one of the light-emitting devices in the first to sixth embodiments described above or a combination thereof.

請參閱圖8，展示了本發明第二實施方式的光源模組700a的示意圖。本實施例所提供的光源模組700a與所述第一實施方式的光源模組700的結構基本一致。不同的是，所述至少一發光裝置的發光層20及導光層30的表面未形成保護層40，從而避免所述保護層40因受熱黃化而降低所述發光晶片10的發光效率及減少其使用壽命，此外，所述光源模組700a還包括一透鏡7，所述透鏡7形成於所述發光層20的上方。Please refer to FIG. 8, which shows a schematic diagram of a light source module 700a according to a second embodiment of the present invention. The structure of the light source module 700a provided in this embodiment is basically the same as that of the light source module 700 of the first embodiment. The difference is that the protective layer 40 is not formed on the surface of the light-emitting layer 20 and the light-guiding layer 30 of the at least one light-emitting device, so as to prevent the protective layer 40 from yellowing due to heat and reduce the luminous efficiency of the light-emitting chip 10. Its service life, in addition, the light source module 700a further includes a lens 7 formed above the light-emitting layer 20.

可以理解的，在其他實施例中，所述至少一發光裝置還可以選自上述第一實施例至第六實施例中的發光裝置中的一種或他們之間的組合。It is understandable that in other embodiments, the at least one light-emitting device may also be selected from one of the light-emitting devices in the first to sixth embodiments described above or a combination thereof.

請參閱圖9，展示了本發明第三實施方式的光源模組700b的示意圖。本實施例所提供的光源模組700b與所述第一實施方式的光源模組700的結構基本一致。不同的是，所述光源模組700b還包括一反射杯9，且所述基本1、所述至少第一電極3、所述第二電極5及所述至少一發光裝置100（參圖1）設置於所述反射杯9內。Please refer to FIG. 9, which shows a schematic diagram of a light source module 700b according to a third embodiment of the present invention. The structure of the light source module 700b provided in this embodiment is basically the same as that of the light source module 700 of the first embodiment. The difference is that the light source module 700b further includes a reflecting cup 9, and the base 1, the at least first electrode 3, the second electrode 5, and the at least one light emitting device 100 (see FIG. 1) Set in the reflecting cup 9.

所述反射杯9包括一杯底91和自所述杯底91傾斜向上延伸的一杯壁92。The reflecting cup 9 includes a cup bottom 91 and a cup wall 92 extending obliquely upward from the cup bottom 91.

所述杯壁92具有面向所述發光裝置100的一反射面920。所述反射面920由鏡面反射材料製成。所述鏡面反射材料為金屬材料。所述金屬材料包括金、銀、鋁、鉻、銅、錫或鎳。The cup wall 92 has a reflective surface 920 facing the light emitting device 100. The reflective surface 920 is made of a specular reflective material. The specular reflection material is a metal material. The metal material includes gold, silver, aluminum, chromium, copper, tin or nickel.

所述反射杯9是一軸對稱圖形。所述至少一發光裝置設置100於所述反射杯9的對稱中心上。The reflecting cup 9 is an axially symmetrical figure. The at least one light emitting device 100 is arranged on the symmetry center of the reflecting cup 9.

可以理解的，在其他實施例中，所述至少一發光裝置100還可以選自上述第一實施例至第六實施例中的發光裝置中的一種或他們之間的組合。It is understandable that in other embodiments, the at least one light-emitting device 100 may also be selected from one of the light-emitting devices in the first to sixth embodiments described above or a combination thereof.

請參閱圖10，展示了本發明第四實施方式的光源模組700c的示意圖。本實施例所提供的光源模組700c與所述第三實施方式的光源模組700b的結構基本一致。不同的是，所述至少一發光裝置的發光層20及導光層30的表面未形成保護層40，從而避免所述保護層40因受熱黃化而降低所述發光晶片10的發光效率及減少其使用壽命，此外，所述光源模組700c還包括一透鏡7，所述透鏡7形成於所述發光層20的上方。Please refer to FIG. 10, which shows a schematic diagram of a light source module 700c according to a fourth embodiment of the present invention. The structure of the light source module 700c provided in this embodiment is basically the same as that of the light source module 700b of the third embodiment. The difference is that the protective layer 40 is not formed on the surface of the light-emitting layer 20 and the light-guiding layer 30 of the at least one light-emitting device, so as to prevent the protective layer 40 from yellowing due to heat and reduce the luminous efficiency of the light-emitting chip 10. Its service life, in addition, the light source module 700c further includes a lens 7 formed above the light-emitting layer 20.

在本實施例中，所述透鏡7能夠形成於所述至少一發光裝置的發光層20的上表面，且所述至少一發光裝置與所述透鏡7設置於所述反射杯9內。 可以理解的，在其他實施例中，所述透鏡7還能夠安裝於所述反射杯9的杯壁92的上方。In this embodiment, the lens 7 can be formed on the upper surface of the light-emitting layer 20 of the at least one light-emitting device, and the at least one light-emitting device and the lens 7 are disposed in the reflection cup 9. It is understandable that in other embodiments, the lens 7 can also be installed above the cup wall 92 of the reflecting cup 9.

可以理解的，在其他實施例中，所述至少一發光裝置還可以選自上述第一實施例至第六實施例中的發光裝置中的一種或他們之間的組合。It is understandable that in other embodiments, the at least one light-emitting device may also be selected from one of the light-emitting devices in the first to sixth embodiments described above or a combination thereof.

上述第一實施例至第四實施例的發光裝置能夠應用於背光模組（圖未示）中，所述背光模組包括一種背光模組，包括一背板、一所述發光裝置及一擴散板。所述發光裝置安裝於所述背板內。所述擴散板安裝於所述背板上且位於所述發光裝置的上方。The light-emitting devices of the first to fourth embodiments described above can be applied to a backlight module (not shown). The backlight module includes a backlight module that includes a back plate, the light-emitting device, and a diffuser. board. The light emitting device is installed in the backplane. The diffusion plate is installed on the back plate and located above the light-emitting device.

可以理解的，由於所述背光模組具有實施例1至實施例4中的任一發光裝置，從而所述發光裝置從側面測出的光將導向所述擴散板，進而提高發光亮度及發光效率。It is understandable that since the backlight module has any light-emitting device in Embodiments 1 to 4, the light measured from the side of the light-emitting device will be guided to the diffuser, thereby improving the luminous brightness and luminous efficiency .

在其他實施例中，上述第一實施例至第四實施例的發光裝置還可以應用於側入式背光模組。In other embodiments, the light-emitting devices of the first to fourth embodiments described above may also be applied to edge-lit backlight modules.

請參閱圖11和圖12，本發明發光裝置100的第一實施例的製備方法，其包括如下步驟： 步驟S101、提供複數個發光晶片10，每一發光晶片10具有一上表面11、一下表面12和一側面13； 步驟S102、將所述發光晶片10的下表面11黏附於一擴張膜50上； 步驟S103、將微珠32均勻分散於所述發光晶片40的上表面11與相鄰所述發光晶片10所形成的間隙中； 步驟S104、去除未黏附於所述擴張膜50上的微珠32； 步驟S105、將含發光粉粒21、31的液體相施加於所述發光晶片10的上表面11及相鄰所述發光晶片10所形成的間隙中； 步驟S106、移除所述液體，以使所述發光粉粒21、31及所述微珠32凝結成塊，並於所述發光晶片10的上表面11形成發光層20及於所述發光晶片10的側面13形成導光層20； 步驟S107、將所述高分子材料包覆所述發光層20和所述導光層30；以及 步驟S108、於相應位置切割，以使所述微珠32負載於所述發光晶片10的側面13。Referring to FIGS. 11 and 12, the manufacturing method of the first embodiment of the light-emitting device 100 of the present invention includes the following steps: Step S101, providing a plurality of light-emitting chips 10, each light-emitting chip 10 having an upper surface 11 and a lower surface 12 and a side surface 13; Step S102, stick the lower surface 11 of the light-emitting chip 10 on an expansion film 50; Step S103, evenly disperse the microbeads 32 on the upper surface 11 of the light-emitting chip 40 and adjacent ones In the gap formed by the light-emitting chip 10; Step S104, remove the microbeads 32 that are not adhered to the expansion film 50; Step S105, apply the liquid phase containing the light-emitting powder particles 21, 31 to the light-emitting chip 10 In the gap formed by the upper surface 11 and the adjacent light-emitting chip 10; Step S106, remove the liquid, so that the light-emitting powder particles 21, 31 and the microbeads 32 are condensed into a mass, and placed in the A light-emitting layer 20 is formed on the upper surface 11 of the light-emitting chip 10 and a light-guiding layer 20 is formed on the side surface 13 of the light-emitting chip 10; Step S107, covering the light-emitting layer 20 and the light-guiding layer 30 with the polymer material And step S108, cutting at a corresponding position, so that the microbeads 32 are loaded on the side surface 13 of the light-emitting chip 10.

可以理解的，所述擴張膜50是本領域擴晶製作常用的材料。所述擴張膜50的材料例如是，但不局限於，紙質、布料、聚對苯二甲酸乙二醇酯（Polyethylene terephthalate，PET）、聚乙烯醇（polyvinyl alcohol，PVA）及尼龍（Polyamide，PA）、聚氯乙烯（Polyvinylchlorid，PVC）、聚乙烯、聚丙烯、聚苯乙烯或其他樹脂製成的薄膜。所述擴張膜50還包括一黏膠層（圖中未示）。所述黏膠層例如是矽膠膜、壓克力膜或是UV膜。It can be understood that the expansion film 50 is a commonly used material for crystal expansion and production in the art. The material of the expansion film 50 is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), and nylon (Polyamide, PA). ), polyvinylchlorid (PVC), polyethylene, polypropylene, polystyrene or other resin films. The expansion film 50 also includes an adhesive layer (not shown in the figure). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.

本領域技術人員能夠理解的，所述UV膜是將特殊配方塗料塗布於PET薄膜、PVC薄膜、PO、聚乙烯-聚醋酸乙烯酯共聚物（Polyethylene vinylacetate，EVA）等薄膜基材表面。，當使用所述PO薄膜基材時，製得的UV薄膜穩定、粘著力高且經UV固化機照射後，可減黏至方便取所述發光晶片10。當使用所述PET薄膜基材時，製得的UV薄膜能夠於無塵室貼合使用、適合用於晶圓、玻璃、陶瓷板的切割，並且經UV光源照射後撕離不殘膠。Those skilled in the art can understand that the UV film is coated with a special formulation coating on the surface of a film substrate such as PET film, PVC film, PO, polyethylene-polyvinyl acetate copolymer (Polyethylene vinyl acetate, EVA). When the PO film substrate is used, the prepared UV film is stable, has high adhesion, and can be reduced in viscosity after being irradiated by a UV curing machine to facilitate the extraction of the light-emitting chip 10. When the PET film substrate is used, the prepared UV film can be laminated and used in a clean room, is suitable for cutting wafers, glass, and ceramic plates, and is irradiated by a UV light source without tearing away.

可以理解的，所述擴張膜50具有雙粘貼特性，從而可以將擴晶後的擴張膜50粘貼在表面貼裝設備（圖中未示）上，以去除所述發光晶片10表面粘附的擴張膜50，並能夠保證發光晶片10間的平整度。可以理解的，去除所述發光晶片10上的所述擴張膜50後，還包括對去除所述擴張膜50後的半導體晶片10進行表面清潔。It is understandable that the expansion film 50 has a double-sticking characteristic, so that the expanded film 50 after the crystal expansion can be pasted on a surface mount device (not shown) to remove the expansion of the light-emitting chip 10 surface adhesion. The film 50 can ensure the flatness between the light-emitting chips 10. It is understandable that after removing the expansion film 50 on the light-emitting wafer 10, it further includes cleaning the surface of the semiconductor wafer 10 after the expansion film 50 is removed.

在本實施例中，所述微珠32為反射型微珠34，所述反射型微珠34採用反射型玻璃微珠。可以理解的，在其他實施例中所示微珠32還可以為反射型陶瓷微珠。所述液體為不含膠的水或揮發性溶劑，所述揮發性溶劑選自醚類、醇類或酮類中的一種或它們之間的組合。所述膠例如是環氧樹脂或矽膠類物質。所述含發光粉粒21、31的液體相施加方式例如是，但不局限於，噴塗、浸漬等方式。可以理解的，所述浸漬方式主要是通過將所述發光晶片10置於含不含膠的液體容器（圖中未示）中，使得所述發光粉粒21、31沉降或附著於所述發光晶片10的上表面11、下表面12及側面13。In this embodiment, the beads 32 are reflective beads 34, and the reflective beads 34 are reflective glass beads. It can be understood that the microbeads 32 shown in other embodiments may also be reflective ceramic microbeads. The liquid is glue-free water or a volatile solvent, and the volatile solvent is selected from one or a combination of ethers, alcohols, or ketones. The glue is, for example, epoxy resin or silicon glue. The application method of the liquid phase containing the luminescent powder particles 21 and 31 is, for example, but not limited to, spraying, dipping and the like. It is understandable that the dipping method is mainly to place the light-emitting chip 10 in a liquid container (not shown in the figure) containing no glue, so that the light-emitting powder particles 21, 31 settle or adhere to the light-emitting chip. The upper surface 11, the lower surface 12 and the side surface 13 of the wafer 10.

在所述步驟將含發光粉粒21、31的液體相施加於所述發光晶片10的上表面11及相鄰所述發光晶片10所形成的間隙前，還包括向所述含發光粉粒21、31的液體相中添加所述折射型微珠（圖中未示）。因此，所述發光晶片10的上表面能夠負載至少一層所述折射型微珠（圖中未示），所述發光晶片10的側邊能夠負載多層所述折射型微珠（圖中未示），從而提高發光裝置100的發光效率及發光亮度。Before the step of applying the liquid phase containing the luminescent powder particles 21 and 31 to the upper surface 11 of the light-emitting chip 10 and the gap formed by the adjacent light-emitting chip 10, it further includes applying the liquid phase containing the luminescent powder particles 21 The refractive microbeads (not shown in the figure) are added to the liquid phase of, 31. Therefore, the upper surface of the light-emitting chip 10 can support at least one layer of the refractive microbeads (not shown), and the side of the light-emitting chip 10 can support multiple layers of the refractive microbeads (not shown). , Thereby improving the luminous efficiency and luminous brightness of the light-emitting device 100.

可以理解的，移除所述液體步驟主要通過抽取、流放或是在一定溫度下蒸發所述液體。優選的，本實施例採用蒸發方式移除液體，因此所述發光粉粒21、31及所述微珠32與所述發光粉粒21、31之間能夠通過凡得瓦爾力緊密地結合在一起。It is understandable that the step of removing the liquid is mainly through extraction, drainage, or evaporation of the liquid at a certain temperature. Preferably, in this embodiment, the liquid is removed by evaporation, so the luminescent powder particles 21, 31 and the microbeads 32 and the luminescent powder particles 21, 31 can be tightly combined by Van der Waals force .

可以理解的，當所述微珠32的粒徑大於等於所述發光晶片10的厚度時，所述發光晶片10的側面13負載至少一層所述微珠32。當所述微珠32的粒徑小於所述發光晶片10的厚度時，所述發光晶片10的側面13負載多層所述微珠32。It is understandable that when the particle size of the microbeads 32 is greater than or equal to the thickness of the light-emitting chip 10, the side surface 13 of the light-emitting chip 10 carries at least one layer of the microbeads 32. When the particle size of the microbeads 32 is smaller than the thickness of the light-emitting chip 10, the side surface 13 of the light-emitting chip 10 supports multiple layers of the microbeads 32.

可以理解的，所述發光粉粒21、31、所述微珠32及所述保護層40的組分及結構同第一實施一致，在此不再贅述。It can be understood that the composition and structure of the luminescent powder particles 21, 31, the microbeads 32, and the protective layer 40 are the same as those of the first embodiment, and will not be repeated here.

請參閱圖13和圖14，本發明發光裝置200的第二實施例的製備方法，其包括如下步驟： 步驟S201、提供複數個發光晶片10，每一發光晶片10具有一上表面11、一下表面12和一側面13； 步驟S202、將所述發光晶片10的下表面12黏附於一擴張膜50上； 步驟S203、將微珠32均勻分散於所述發光晶片10的上表面與相鄰所述發光晶片10所形成的間隙中； 步驟S204、去除未黏附於所述擴張膜50上的微珠32； 步驟S205、將含發光粉粒的液體相施加於所述發光晶片10的上表面11及相鄰所述發光晶片10所形成的間隙中； 步驟S206、將含所述微珠32、所述發光粉粒21、31的液體相施加於所述發光晶片10的上表面11及相鄰所述發光晶片10所形成的間隙中； 步驟S207、移除所述液體，以使所述發光粉粒21、31及所述微珠32凝結成塊，並於所述發光晶片10的上表面11形成發光層20及於所述發光晶片10的側面13形成導光層30； 步驟S208、將所述高分子材料包覆所述發光層20和所述導光層30；以及 步驟S209、於相應位置切割，以使所述微珠32負載於所述發光晶片10的側面13。Referring to FIGS. 13 and 14, the method of manufacturing the second embodiment of the light-emitting device 200 of the present invention includes the following steps: Step S201, providing a plurality of light-emitting chips 10, each light-emitting chip 10 has an upper surface 11 and a lower surface 12 and a side surface 13; Step S202, stick the lower surface 12 of the light-emitting chip 10 on an expansion film 50; Step S203, evenly disperse the microbeads 32 on the upper surface of the light-emitting chip 10 and the adjacent In the gap formed by the light-emitting chip 10; Step S204, remove the beads 32 that are not adhered to the expansion film 50; Step S205, apply a liquid phase containing light-emitting particles to the upper surface 11 of the light-emitting chip 10 and In the gap formed by the adjacent light-emitting chips 10; Step S206, applying the liquid phase containing the microbeads 32 and the light-emitting powder particles 21, 31 to the upper surface 11 of the light-emitting chip 10 and adjacent places In the gap formed by the light-emitting chip 10; Step S207, remove the liquid, so that the light-emitting powder particles 21, 31 and the microbeads 32 are condensed into a mass and placed on the upper surface 11 of the light-emitting chip 10 Forming a light-emitting layer 20 and forming a light-guiding layer 30 on the side surface 13 of the light-emitting chip 10; step S208, covering the light-emitting layer 20 and the light-guiding layer 30 with the polymer material; and step S209, corresponding to Position cutting so that the microbeads 32 are loaded on the side surface 13 of the light-emitting chip 10.

可以理解的，所述擴張膜50是本領域擴晶製作常用的材料。所述擴張膜50的材料例如是，但不局限於，紙質、布料、聚對苯二甲酸乙二醇酯（Polyethylene terephthalate，PET）、聚乙烯醇（polyvinyl alcohol，PVA）及尼龍（Polyamide，PA）、聚氯乙烯（Polyvinylchlorid，PVC）、聚乙烯、聚丙烯、聚苯乙烯或其他樹脂製成的薄膜。所述擴張膜50還包括一黏膠層（圖中未示）。所述黏膠層例如是矽膠膜、壓克力膜或是UV膜。It can be understood that the expansion film 50 is a commonly used material for crystal expansion and production in the art. The material of the expansion film 50 is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), and nylon (Polyamide, PA). ), polyvinylchlorid (PVC), polyethylene, polypropylene, polystyrene or other resin films. The expansion film 50 also includes an adhesive layer (not shown in the figure). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.

本領域技術人員能夠理解的，所述UV膜是將特殊配方塗料塗布於PET薄膜、PVC薄膜、PO、聚乙烯-聚醋酸乙烯酯共聚物（Polyethylene vinylacetate，EVA）等薄膜基材表面。，當使用所述PO薄膜基材時，製得的UV薄膜穩定、粘著力高且經UV固化機照射後，可減黏至方便取所述發光晶片10。當使用所述PET薄膜基材時，製得的UV薄膜能夠於無塵室貼合使用、適合用於晶圓、玻璃、陶瓷板的切割，並且經UV光源照射後撕離不殘膠。Those skilled in the art can understand that the UV film is coated with a special formulation coating on the surface of a film substrate such as PET film, PVC film, PO, polyethylene-polyvinyl acetate copolymer (Polyethylene vinyl acetate, EVA). When the PO film substrate is used, the prepared UV film is stable, has high adhesion, and can be reduced in viscosity after being irradiated by a UV curing machine to facilitate the extraction of the light-emitting chip 10. When the PET film substrate is used, the prepared UV film can be laminated and used in a clean room, is suitable for the cutting of wafers, glass, and ceramic plates, and is not torn off after being irradiated by a UV light source.

可以理解的，所述擴張膜50具有雙粘貼特性，從而可以將擴晶後的擴張膜50粘貼在表面貼裝設備（圖中未示）上，以去除所述發光晶片10表面粘附的擴張膜50，並能夠保證發光晶片10間的平整度。可以理解的，去除所述發光晶片10上的所述擴張膜50後，還包括對去除所述擴張膜50後的半導體晶片10進行表面清潔。It is understandable that the expansion film 50 has a double-sticking characteristic, so that the expanded film 50 after the crystal expansion can be pasted on a surface mount device (not shown) to remove the expansion of the light-emitting chip 10 surface adhesion. The film 50 can ensure the flatness between the light-emitting chips 10. It is understandable that after removing the expansion film 50 on the light-emitting wafer 10, it further includes cleaning the surface of the semiconductor wafer 10 after the expansion film 50 is removed.

在本實施例中，所述微珠32包括反射型微珠34和折射型微珠33，所述反射型微珠34採用反射型玻璃微珠，所述折射型微珠33採用折射型玻璃微珠。可以理解的，在其他實施例中，所示微珠32還可以為反射型陶瓷微珠，所述折射型玻璃微珠33還可以為折射型陶瓷微珠。在步驟S203中，所述微珠32採用反射型微珠34，在步驟S206中，所述微珠32採用折射型微珠33。因此，所述導光層30能夠形成至少兩層微珠32，且所述反射型微珠34與所述至少一層折射型微珠33自所述發光晶片10所放出的光徑方向依次排列，也即所述至少一層折射型微珠33位於所述反射型微珠34的上方。因此，所述發光晶片10於其側面發出的光線能夠更多朝所述發光層20照射，從而提高所述發光裝置200的發光亮度及發光效率。In this embodiment, the beads 32 include reflective beads 34 and refractive beads 33, the reflective beads 34 use reflective glass beads, and the refractive beads 33 use refractive glass beads. Beads. It is understandable that in other embodiments, the shown microbeads 32 may also be reflective ceramic microbeads, and the refractive glass microbeads 33 may also be refractive ceramic microbeads. In step S203, the microbeads 32 are reflective microbeads 34, and in step S206, the microbeads 32 are refractive microbeads 33. Therefore, the light guide layer 30 can form at least two layers of microbeads 32, and the reflective microbeads 34 and the at least one layer of refractive microbeads 33 are arranged in order from the light path direction emitted by the light-emitting chip 10, That is, the at least one layer of refractive microbeads 33 is located above the reflective microbeads 34. Therefore, the light emitted from the side surface of the light-emitting chip 10 can be irradiated more toward the light-emitting layer 20, thereby improving the light-emitting brightness and light-emitting efficiency of the light-emitting device 200.

所述液體為不含膠的水或揮發性溶劑，所述揮發性溶劑選自醚類、醇類或酮類中的一種或它們之間的組合。所述膠例如是環氧樹脂或矽膠類物質。所述含發光粉粒21、31的液體相施加方式例如是，但不局限於，噴塗、浸漬等方式。可以理解的，所述浸漬方式主要是通過將所述發光晶片10置於含不含膠的液體容器（圖中未示）中，使得所述發光粉粒21、31沉降或附著於所述發光晶片10的上表面11、下表面12及側面13。The liquid is glue-free water or a volatile solvent, and the volatile solvent is selected from one or a combination of ethers, alcohols, or ketones. The glue is, for example, epoxy resin or silicon glue. The application method of the liquid phase containing the luminescent powder particles 21 and 31 is, for example, but not limited to, spraying, dipping and the like. It is understandable that the dipping method is mainly to place the light-emitting chip 10 in a liquid container (not shown in the figure) containing no glue, so that the light-emitting powder particles 21, 31 settle or adhere to the light-emitting chip. The upper surface 11, the lower surface 12 and the side surface 13 of the wafer 10.

可以理解的，移除所述液體步驟主要通過抽取、流放或是在一定溫度下蒸發所述液體。優選的，本實施例採用蒸發方式移除液體，因此所述發光粉粒21、31及所述微珠32與所述發光粉粒21、31之間能夠通過凡得瓦爾力緊密地結合在一起。It is understandable that the step of removing the liquid is mainly through extraction, drainage, or evaporation of the liquid at a certain temperature. Preferably, in this embodiment, the liquid is removed by evaporation, so the luminescent powder particles 21, 31 and the microbeads 32 and the luminescent powder particles 21, 31 can be tightly combined by Van der Waals force .

進一步的，當所述微珠32的粒徑大於等於所述發光晶片10的厚度時，所述發光晶片10的側面13負載至少一層所述微珠32。當所述微珠32的粒徑小於所述發光晶片10的厚度時，所述發光晶片10的側面13負載多層所述微珠32。Further, when the particle size of the microbeads 32 is greater than or equal to the thickness of the light-emitting chip 10, the side surface 13 of the light-emitting chip 10 supports at least one layer of the microbeads 32. When the particle size of the microbeads 32 is smaller than the thickness of the light-emitting chip 10, the side surface 13 of the light-emitting chip 10 supports multiple layers of the microbeads 32.

可以理解的，所述發光粉粒21、31、所述微珠32及所述保護層40的組分及結構同第一實施一致，在此不再贅述。It can be understood that the composition and structure of the luminescent powder particles 21, 31, the microbeads 32, and the protective layer 40 are the same as those in the first embodiment, and will not be repeated here.

請參閱圖15和圖16，本發明發光裝置300的第三實施例的製備方法，其包括如下步驟： 步驟S301、提供複數個發光晶片10，每一發光晶片10具有一上表面11、一下表面12和一側面13； 步驟S302、將所述發光晶片10的下表面12黏附於一擴張膜50上； 步驟S303、將含微珠32、發光粉粒21、31的液體相施加於所述發光晶片10的上表面11及相鄰所述發光晶片10所形成的間隙中； 步驟S304、移除所述液體，以使所述發光粉粒21、31及所述微珠32凝結成塊，並於所述發光晶片10的上表面11形成發光層20及於所述發光晶片10的側面13形成導光層30； 步驟S305、將所述高分子材料包覆所述發光層20和所述導光層30；以及 步驟S306、於相應位置切割，以使所述微珠32負載於所述發光晶片10的側面13。15 and 16, the manufacturing method of the third embodiment of the light emitting device 300 of the present invention includes the following steps: Step S301, providing a plurality of light emitting chips 10, each light emitting chip 10 has an upper surface 11 and a lower surface 12 and a side surface 13; Step S302, attach the lower surface 12 of the light-emitting chip 10 to an expansion film 50; Step S303, apply a liquid phase containing beads 32 and light-emitting powder particles 21, 31 to the light-emitting In the gap formed by the upper surface 11 of the chip 10 and the adjacent light-emitting chip 10; Step S304, remove the liquid to make the light-emitting powder particles 21, 31 and the microbeads 32 agglomerate, and A light-emitting layer 20 is formed on the upper surface 11 of the light-emitting chip 10 and a light-guiding layer 30 is formed on the side surface 13 of the light-emitting chip 10; Step S305, covering the light-emitting layer 20 and the light-guiding layer with the polymer material Optical layer 30; and step S306, cutting at corresponding positions, so that the microbeads 32 are loaded on the side surface 13 of the light-emitting chip 10.

在其他實施例中，步驟S302可以替換為將所述發光晶片10的下表面12通過固晶機（圖未示）焊接於所述光源模組700、700a、700b、700d的基板1上，或是所述背光模組（圖未示）的背板上。In other embodiments, step S302 can be replaced by welding the lower surface 12 of the light-emitting chip 10 to the substrate 1 of the light source module 700, 700a, 700b, 700d by a die bonder (not shown), or It is the back plate of the backlight module (not shown).

其中，所述步驟S305是為了所述發光層20和所述導光層30在其表面形成保護層40，以使所述發光層20和所述導光層30與外界隔絕，從而避免外界的影響與污染。Wherein, the step S305 is to form a protective layer 40 on the surface of the light-emitting layer 20 and the light guide layer 30 to isolate the light-emitting layer 20 and the light guide layer 30 from the outside, thereby avoiding external Impact and pollution.

可以理解的，在其他實施例中，所述步驟S305可以省略，以避免所述保護層40受熱黃化而降低所述發光晶片10的發光效率及減少其使用壽命。It is understandable that, in other embodiments, the step S305 may be omitted to prevent the protective layer 40 from being yellowed by heating, thereby reducing the luminous efficiency of the light-emitting chip 10 and reducing its service life.

可以理解的，所述擴張膜50是本領域擴晶製作常用的材料。所述擴張膜50的材料例如是，但不局限於，紙質、布料、聚對苯二甲酸乙二醇酯（Polyethylene terephthalate，PET）、聚乙烯醇（polyvinyl alcohol，PVA）及尼龍（Polyamide，PA）、聚氯乙烯（Polyvinylchlorid，PVC）、聚乙烯、聚丙烯、聚苯乙烯或其他樹脂製成的薄膜。所述擴張膜50還包括一黏膠層（圖中未示）。所述黏膠層例如是矽膠膜、壓克力膜或是UV膜。It can be understood that the expansion film 50 is a commonly used material for crystal expansion and production in the art. The material of the expansion film 50 is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), and nylon (Polyamide, PA). ), polyvinylchlorid (PVC), polyethylene, polypropylene, polystyrene or other resin films. The expansion film 50 also includes an adhesive layer (not shown in the figure). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.

本領域技術人員能夠理解的，所述UV膜是將特殊配方塗料塗布於PET薄膜、PVC薄膜、PO、聚乙烯-聚醋酸乙烯酯共聚物（Polyethylene vinylacetate，EVA）等薄膜基材表面。，當使用所述PO薄膜基材時，製得的UV薄膜穩定、粘著力高且經UV固化機照射後，可減黏至方便取所述發光晶片10。當使用所述PET薄膜基材時，製得的UV薄膜能夠於無塵室貼合使用、適合用於晶圓、玻璃、陶瓷板的切割，並且經UV光源照射後撕離不殘膠。Those skilled in the art can understand that the UV film is coated with a special formulation coating on the surface of a film substrate such as PET film, PVC film, PO, polyethylene-polyvinyl acetate copolymer (Polyethylene vinyl acetate, EVA). When the PO film substrate is used, the prepared UV film is stable, has high adhesion, and can be reduced in viscosity after being irradiated by a UV curing machine to facilitate the extraction of the light-emitting chip 10. When the PET film substrate is used, the prepared UV film can be laminated and used in a clean room, is suitable for the cutting of wafers, glass, and ceramic plates, and is not torn off after being irradiated by a UV light source.

可以理解的，所述擴張膜50具有雙粘貼特性，從而可以將擴晶後的擴張膜50粘貼在表面貼裝設備（圖中未示）上，以去除所述發光晶片10表面粘附的擴張膜50，並能夠保證發光晶片10間的平整度。可以理解的，去除所述發光晶片10上的所述擴張膜50後，還包括對去除所述擴張膜50後的半導體晶片10進行表面清潔。It is understandable that the expansion film 50 has a double-sticking characteristic, so that the expanded film 50 after the crystal expansion can be pasted on a surface mount device (not shown) to remove the expansion of the light-emitting chip 10 surface adhesion. The film 50 can ensure the flatness between the light-emitting chips 10. It is understandable that after removing the expansion film 50 on the light-emitting wafer 10, it further includes cleaning the surface of the semiconductor wafer 10 after the expansion film 50 is removed.

所述液體為不含膠的水或揮發性溶劑，所述揮發性溶劑選自醚類、醇類或酮類中的一種或它們之間的組合。所述膠例如是環氧樹脂或矽膠類物質。所述含發光粉粒21、31的液體相施加方式例如是，但不局限於，噴塗、浸漬等方式。可以理解的，所述浸漬方式主要是通過將所述發光晶片10置於含不含膠的液體容器（圖中未示）中，使得所述發光粉粒21、31沉降或附著於所述發光晶片10的上表面11、下表面12及側面13。The liquid is glue-free water or a volatile solvent, and the volatile solvent is selected from one or a combination of ethers, alcohols, or ketones. The glue is, for example, epoxy resin or silicon glue. The application method of the liquid phase containing the luminescent powder particles 21 and 31 is, for example, but not limited to, spraying, dipping and the like. It is understandable that the dipping method is mainly to place the light-emitting chip 10 in a liquid container (not shown in the figure) containing no glue, so that the light-emitting powder particles 21, 31 settle or adhere to the light-emitting chip. The upper surface 11, the lower surface 12 and the side surface 13 of the wafer 10.

可以理解的，移除所述液體步驟主要通過抽取、流放或是在一定溫度下蒸發所述液體。優選的，本實施例採用蒸發方式移除液體，因此所述發光粉粒21、31及所述微珠32與所述發光粉粒21、31之間能夠通過凡得瓦爾力緊密地結合在一起。It is understandable that the step of removing the liquid is mainly through extraction, drainage, or evaporation of the liquid at a certain temperature. Preferably, in this embodiment, the liquid is removed by evaporation, so the luminescent powder particles 21, 31 and the microbeads 32 and the luminescent powder particles 21, 31 can be tightly combined by Van der Waals force .

可以理解的，當所述微珠32的粒徑大於等於所述發光晶片10的厚度時，所述發光晶片10的側面13負載至少一層所述微珠32。當所述微珠32的粒徑小於所述發光晶片10的厚度時，所述發光晶片10的側面13負載多層所述微珠32。在本實施例中，所述微珠32為折射型微珠33，所述折射型微珠33採用折射型玻璃微珠，在其他實施例中，所述折射型微珠33還可採用折射型陶瓷微珠。It is understandable that when the particle size of the microbeads 32 is greater than or equal to the thickness of the light-emitting chip 10, the side surface 13 of the light-emitting chip 10 carries at least one layer of the microbeads 32. When the particle size of the microbeads 32 is smaller than the thickness of the light-emitting chip 10, the side surface 13 of the light-emitting chip 10 supports multiple layers of the microbeads 32. In this embodiment, the bead 32 is a refractive type bead 33, and the refractive type bead 33 is a refractive type glass bead. In other embodiments, the refractive type bead 33 may also be a refractive type. Ceramic beads.

可以理解的，所述發光粉粒21、31、所述微珠32及所述保護層40的組分及結構同第一實施一致，在此不再贅述。It can be understood that the composition and structure of the luminescent powder particles 21, 31, the microbeads 32, and the protective layer 40 are the same as those in the first embodiment, and will not be repeated here.

請參閱圖17和圖18，本發明發光裝置400的第四實施例的製備方法，其包括如下步驟： 步驟S401、提供複數個發光晶片10，每一發光晶片10具有一上表面11、一下表面12和一側面13； 步驟S402、將所述發光晶片10的下表面12黏附於一擴張膜50上； 步驟S403、將含微珠32、發光粉粒21、31的液體相施加於所述發光晶片10的上表面11及相鄰所述發光晶片10所形成的間隙中； 步驟S404、重複將含微珠32、發光粉粒21、31的液體相施加於相鄰所述發光晶片10所形成的間隙中； 步驟S405、移除所述液體，以使所述發光粉粒21、31及所述微珠32凝結成塊，並於所述發光晶片10的上表面11形成發光層20及於所述發光晶片10的側面13形成導光層30； 步驟S406、將所述高分子材料包覆所述發光層20和所述導光層30；以及 步驟S407、於相應位置切割，以使所述微珠32負載於所述發光晶片10的侧面13。Referring to FIGS. 17 and 18, the manufacturing method of the fourth embodiment of the light emitting device 400 of the present invention includes the following steps: Step S401, providing a plurality of light emitting chips 10, each light emitting chip 10 has an upper surface 11 and a lower surface 12 and a side surface 13; Step S402, attach the lower surface 12 of the light-emitting chip 10 to an expansion film 50; Step S403, apply a liquid phase containing beads 32 and light-emitting powder particles 21, 31 to the light-emitting The upper surface 11 of the wafer 10 and the gap formed by the adjacent light-emitting chip 10; Step S404, repeated application of the liquid phase containing the microbeads 32 and the light-emitting powder particles 21, 31 to the adjacent light-emitting chip 10 is formed Step S405, remove the liquid to make the luminescent powder particles 21, 31 and the microbeads 32 condense into a mass, and form a luminescent layer 20 on the upper surface 11 of the luminescent chip 10 and A light guide layer 30 is formed on the side surface 13 of the light-emitting chip 10; step S406, covering the light-emitting layer 20 and the light guide layer 30 with the polymer material; and step S407, cutting at a corresponding position to make the The microbeads 32 are carried on the side surface 13 of the light-emitting chip 10.

在其他實施例中，步驟S402可以替換為將所述發光晶片10的下表面12通過固晶機（圖未示）焊接於所述光源模組700、700a、700b、700d的基板1上，或是所述背光模組（圖未示）的背板上。In other embodiments, step S402 can be replaced by welding the lower surface 12 of the light-emitting chip 10 on the substrate 1 of the light source module 700, 700a, 700b, 700d by a die bonder (not shown), or It is the back plate of the backlight module (not shown).

其中，所述步驟S406是為了所述發光層20和所述導光層30在其表面形成保護層40，以使所述發光層20和所述導光層30與外界隔絕，從而避免外界的影響與污染。Wherein, the step S406 is to form a protective layer 40 on the surface of the light-emitting layer 20 and the light guide layer 30, so as to isolate the light-emitting layer 20 and the light guide layer 30 from the outside, thereby avoiding external Impact and pollution.

可以理解的，在其他實施例中，所述步驟S406可以省略，以避免所述保護層40受熱黃化而降低所述發光晶片10的發光效率及減少其使用壽命。It is understandable that, in other embodiments, the step S406 may be omitted to prevent the protective layer 40 from being yellowed by heating, thereby reducing the luminous efficiency of the light-emitting chip 10 and reducing its service life.

可以理解的，所述擴張膜50是本領域擴晶製作常用的材料。所述擴張膜50的材料例如是，但不局限於，紙質、布料、聚對苯二甲酸乙二醇酯（Polyethylene terephthalate，PET）、聚乙烯醇（polyvinyl alcohol，PVA）及尼龍（Polyamide，PA）、聚氯乙烯（Polyvinylchlorid，PVC）、聚乙烯、聚丙烯、聚苯乙烯或其他樹脂製成的薄膜。所述擴張膜50還包括一黏膠層（圖中未示）。所述黏膠層例如是矽膠膜、壓克力膜或是UV膜。It can be understood that the expansion film 50 is a commonly used material for crystal expansion and production in the art. The material of the expansion film 50 is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), and nylon (Polyamide, PA). ), polyvinylchlorid (PVC), polyethylene, polypropylene, polystyrene or other resin films. The expansion film 50 also includes an adhesive layer (not shown in the figure). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.

本領域技術人員能夠理解的，所述UV膜是將特殊配方塗料塗布於PET薄膜、PVC薄膜、PO、聚乙烯-聚醋酸乙烯酯共聚物（Polyethylene vinylacetate，EVA）等薄膜基材表面。，當使用所述PO薄膜基材時，製得的UV薄膜穩定、粘著力高且經UV固化機照射後，可減黏至方便取所述發光晶片10。當使用所述PET薄膜基材時，製得的UV薄膜能夠於無塵室貼合使用、適合用於晶圓、玻璃、陶瓷板的切割，並且經UV光源照射後撕離不殘膠。Those skilled in the art can understand that the UV film is coated with a special formulation coating on the surface of a film substrate such as PET film, PVC film, PO, polyethylene-polyvinyl acetate copolymer (Polyethylene vinyl acetate, EVA). When the PO film substrate is used, the prepared UV film is stable, has high adhesion, and can be reduced in viscosity after being irradiated by a UV curing machine to facilitate the extraction of the light-emitting chip 10. When the PET film substrate is used, the prepared UV film can be laminated and used in a clean room, is suitable for the cutting of wafers, glass, and ceramic plates, and is not torn off after being irradiated by a UV light source.

可以理解的，所述擴張膜50具有雙粘貼特性，從而可以將擴晶後的擴張膜50粘貼在表面貼裝設備（圖中未示）上，以去除所述發光晶片10表面粘附的擴張膜50，並能夠保證發光晶片10間的平整度。可以理解的，去除所述發光晶片10上的所述擴張膜50後，還包括對去除所述擴張膜50後的半導體晶片10進行表面清潔。It is understandable that the expansion film 50 has a double-sticking characteristic, so that the expanded film 50 after the crystal expansion can be pasted on a surface mount device (not shown) to remove the expansion of the light-emitting chip 10 surface adhesion. The film 50 can ensure the flatness between the light-emitting chips 10. It is understandable that after removing the expansion film 50 on the light-emitting wafer 10, it further includes cleaning the surface of the semiconductor wafer 10 after the expansion film 50 is removed.

所述液體為不含膠的水或揮發性溶劑，所述揮發性溶劑選自醚類、醇類或酮類中的一種或它們之間的組合。所述膠例如是環氧樹脂或矽膠類物質。所述含發光粉粒21、31的液體相施加方式例如是，但不局限於，噴塗、浸漬等方式。可以理解的，所述浸漬方式主要是通過將所述發光晶片10置於含不含膠的液體容器（圖中未示）中，使得所述發光粉粒21、31沉降或附著於所述發光晶片10的上表面11、下表面12及側面13。The liquid is glue-free water or a volatile solvent, and the volatile solvent is selected from one or a combination of ethers, alcohols, or ketones. The glue is, for example, epoxy resin or silicon glue. The application method of the liquid phase containing the luminescent powder particles 21 and 31 is, for example, but not limited to, spraying, dipping and the like. It is understandable that the dipping method is mainly to place the light-emitting chip 10 in a liquid container (not shown in the figure) containing no glue, so that the light-emitting powder particles 21, 31 settle or adhere to the light-emitting chip. The upper surface 11, the lower surface 12 and the side surface 13 of the wafer 10.

可以理解的，移除所述液體步驟主要通過抽取、流放或是在一定溫度下蒸發所述液體。優選的，本實施例採用蒸發方式移除液體，因此所述發光粉粒21、31及所述微珠32與所述發光粉粒21、31之間能夠通過凡得瓦爾力緊密地結合在一起。It is understandable that the step of removing the liquid is mainly through extraction, drainage, or evaporation of the liquid at a certain temperature. Preferably, in this embodiment, the liquid is removed by evaporation, so the luminescent powder particles 21, 31 and the microbeads 32 and the luminescent powder particles 21, 31 can be tightly combined by Van der Waals force .

可以理解的，當所述微珠32的粒徑大於等於所述發光晶片10的厚度時，所述發光晶片10的側面13負載至少一層所述微珠32。當所述微珠32的粒徑小於所述發光晶片10的厚度時，所述發光晶片10的側面13負載多層所述微珠32。在本實施例中，所述微珠32為折射型微珠33，所述折射型微珠33採用折射型玻璃微珠，在其他實施例中，所述折射型微珠33還可採用折射型陶瓷微珠。It is understandable that when the particle size of the microbeads 32 is greater than or equal to the thickness of the light-emitting chip 10, the side surface 13 of the light-emitting chip 10 carries at least one layer of the microbeads 32. When the particle size of the microbeads 32 is smaller than the thickness of the light-emitting chip 10, the side surface 13 of the light-emitting chip 10 supports multiple layers of the microbeads 32. In this embodiment, the bead 32 is a refractive type bead 33, and the refractive type bead 33 is a refractive type glass bead. In other embodiments, the refractive type bead 33 may also be a refractive type. Ceramic beads.

可以理解的，所述發光粉粒21、31、所述微珠32及所述保護層40的組分及結構同第一實施一致，在此不再贅述。It can be understood that the composition and structure of the luminescent powder particles 21, 31, the microbeads 32, and the protective layer 40 are the same as those of the first embodiment, and will not be repeated here.

本發明發光裝置的製備方法，通過將微珠和發光粉粒之間的相互吸引力，從而發光層和導光層製法能夠直接採用附著形式形成於所述發光晶片的表面。此外，由於發光粉粒和微珠通過不含膠的溶劑製備分散液，從而能夠將所述發光粉粒和所述微珠混合均勻，進而使其在所述發光層和所述導光層均勻分散，從而能夠提高發光裝置的發光效率並且避免後續的刮膠處理。綜上，本發明發光裝置的製備方法工藝簡單，成本低廉。本發明所製得的發光裝置能夠降低發光裝置的側漏光，並能夠提高所述發光裝置的發光效率和發光亮度。The preparation method of the light-emitting device of the present invention uses the mutual attraction between the microbeads and the light-emitting powder particles, so that the light-emitting layer and the light-guiding layer can be directly formed on the surface of the light-emitting chip in the form of adhesion. In addition, since the luminescent powder particles and microbeads are prepared by using a solvent that does not contain glue, the luminescent powder particles and the microbeads can be uniformly mixed, thereby making them uniform on the light-emitting layer and the light guide layer. Dispersion, which can improve the luminous efficiency of the light-emitting device and avoid subsequent squeegee processing. In summary, the preparation method of the light-emitting device of the present invention has simple process and low cost. The light-emitting device manufactured by the present invention can reduce the side light leakage of the light-emitting device, and can improve the luminous efficiency and luminous brightness of the light-emitting device.

上述實施例為本發明較佳的實施例，但本發明的實施例並不受上述實施例的限製，以上實施例僅是用於解釋申請專利範圍。然本發明的保護範圍並不局限於說明書。任何熟悉本技術領域的技術人員在本發明披露的技術範圍內，可輕易想到的變化或者替換，都包含在本發明的保護範圍之內。The above-mentioned embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the above-mentioned embodiments, and the above-mentioned embodiments are only used to explain the scope of patent application. However, the protection scope of the present invention is not limited to the specification. Any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention are all included in the protection scope of the present invention.

100、200、300、400、500、600‧‧‧發光裝置 10‧‧‧發光晶片 11‧‧‧上表面 12‧‧‧下表面 13‧‧‧側面 20‧‧‧發光層 21‧‧‧發光粉粒 22、32‧‧‧微珠 33‧‧‧折射型微珠 34‧‧‧反射型微珠 30‧‧‧導光層 40‧‧‧保護層 50‧‧‧擴張膜 700、700a、700b、700c‧‧‧光源模組 1‧‧‧基板 3‧‧‧第一電極 5‧‧‧第二電極 7‧‧‧透鏡 9‧‧‧反射杯 91‧‧‧杯底 92‧‧‧杯壁 920‧‧‧反射面 100, 200, 300, 400, 500, 600‧‧‧Lighting device 10‧‧‧Light-emitting chip 11‧‧‧Upper surface 12‧‧‧Lower surface 13‧‧‧Side 20‧‧‧Light-emitting layer 21‧‧‧Luminous powder 22, 32‧‧‧ beads 33‧‧‧Refracting beads 34‧‧‧Reflective beads 30‧‧‧Light guide layer 40‧‧‧Protection layer 50‧‧‧Expansion film 700, 700a, 700b, 700c‧‧‧Light source module 1‧‧‧Substrate 3‧‧‧First electrode 5‧‧‧Second electrode 7‧‧‧Lens 9‧‧‧Reflective Cup 91‧‧‧Cup bottom 92‧‧‧Cup Wall 920‧‧‧Reflecting surface

圖1係本發明第一實施例的發光裝置的剖視圖。Fig. 1 is a cross-sectional view of a light emitting device according to a first embodiment of the present invention.

圖2係本發明第二實施例的發光裝置的剖視圖。Fig. 2 is a cross-sectional view of a light emitting device according to a second embodiment of the present invention.

圖3係本發明第三實施例的發光裝置的剖視圖。Fig. 3 is a cross-sectional view of a light emitting device according to a third embodiment of the present invention.

圖4係本發明第四實施例的發光裝置的剖視圖。Fig. 4 is a cross-sectional view of a light emitting device according to a fourth embodiment of the present invention.

圖5係本發明第五實施例的發光裝置的剖視圖。Fig. 5 is a cross-sectional view of a light emitting device according to a fifth embodiment of the present invention.

圖6係本發明第六實施例的發光裝置的剖視圖。Fig. 6 is a cross-sectional view of a light emitting device according to a sixth embodiment of the present invention.

圖7係本發明第一實施方式的光源模組的結構示意圖。FIG. 7 is a schematic diagram of the structure of the light source module according to the first embodiment of the present invention.

圖8係本發明第二實施方式的光源模組的結構示意圖。FIG. 8 is a schematic structural diagram of a light source module according to a second embodiment of the present invention.

圖9係本發明第三實施方式的光源模組的結構示意圖。FIG. 9 is a schematic structural diagram of a light source module according to a third embodiment of the present invention.

圖10係本發明第四實施方式的光源模組的結構示意圖。FIG. 10 is a schematic structural diagram of a light source module according to a fourth embodiment of the present invention.

圖11係本發明發光裝置的第一實施例的製備示意圖。FIG. 11 is a schematic diagram of the preparation of the first embodiment of the light-emitting device of the present invention.

圖12係本發明發光裝置的第一實施例的製備流程圖。Fig. 12 is a preparation flow chart of the first embodiment of the light-emitting device of the present invention.

圖13係本發明發光裝置的第二實施例的製備示意圖。FIG. 13 is a schematic diagram of the preparation of the second embodiment of the light-emitting device of the present invention.

圖14係本發明發光裝置的第二實施例的製備流程圖。Fig. 14 is a preparation flow chart of the second embodiment of the light-emitting device of the present invention.

圖15係本發明發光裝置的第三實施例的製備示意圖。Fig. 15 is a schematic diagram of the preparation of the third embodiment of the light-emitting device of the present invention.

圖16係本發明發光裝置的第三實施例的製備流程圖。Fig. 16 is a preparation flow chart of the third embodiment of the light-emitting device of the present invention.

圖17係本發明發光裝置的第四實施例的製備示意圖。Fig. 17 is a schematic diagram of the preparation of the fourth embodiment of the light-emitting device of the present invention.

圖18係本發明發光裝置的第四實施例的製備流程圖。Fig. 18 is a preparation flow chart of the fourth embodiment of the light-emitting device of the present invention.

無no

100‧‧‧發光裝置 100‧‧‧Lighting device

10‧‧‧發光晶片 10‧‧‧Light-emitting chip

11‧‧‧上表面 11‧‧‧Upper surface

12‧‧‧下表面 12‧‧‧Lower surface

13‧‧‧側面 13‧‧‧Side

20‧‧‧發光層 20‧‧‧Light-emitting layer

21、31‧‧‧發光粉粒 21、31‧‧‧Luminous powder

30‧‧‧導光層 30‧‧‧Light guide layer

32‧‧‧微珠 32‧‧‧Beads

40‧‧‧保護層 40‧‧‧Protection layer

Claims (14)

一種發光裝置，包括：一發光晶片，具有一上表面和一側面；一發光層，形成於所述發光晶片的上表面；以及一導光層，形成於所述發光晶片的側面，所述導光層包含複數個發光粉粒和複數個微珠，所述發光層和所述導光層不含黏合劑；其中所述微珠包括反射型微珠、折射型微珠中的一種或它們之間的組合，所述導光層包括至少一層反射型微珠、至少一層折射型微珠或它們之間的組合，所述至少一層反射型微珠與所述至少一層折射型微珠自所述發光晶片所放出的光徑方向依次排列。 A light-emitting device includes: a light-emitting chip having an upper surface and a side surface; a light-emitting layer formed on the upper surface of the light-emitting chip; and a light guide layer formed on the side surface of the light-emitting chip. The light layer includes a plurality of luminescent powder particles and a plurality of microbeads, the light-emitting layer and the light guide layer do not contain a binder; wherein the microbeads include one of reflective microbeads, refractive microbeads, or both The light guide layer includes at least one layer of reflective microbeads, at least one layer of refractive microbeads, or a combination between them, and the at least one layer of reflective microbeads and the at least one layer of refractive microbeads are from the The directions of the light paths emitted by the light-emitting chips are arranged in sequence. 如請求項1所述之發光裝置，所述微珠的粒徑為5μm-600μm。 In the light-emitting device according to claim 1, the particle size of the microbeads is 5 μm-600 μm. 如請求項1所述之發光裝置，所述反射型微珠包含金屬材料、金屬化合物材料中的一種或它們之間的組合。 The light-emitting device according to claim 1, wherein the reflective microbeads comprise one of a metal material, a metal compound material, or a combination thereof. 如請求項3所述之發光裝置，所述金屬材料包括鋁、銀或鎳，所述金屬化合物材料包括硫酸鋇。 The light-emitting device according to claim 3, wherein the metal material includes aluminum, silver or nickel, and the metal compound material includes barium sulfate. 一種背光模組，包括：一背板；一如請求項1至4中任意一項所述的發光裝置，安裝於所述背板內；以及一擴散板，安裝於所述背板上且位於所述發光裝置的上方。 A backlight module, comprising: a back plate; a light emitting device according to any one of claims 1 to 4, installed in the back plate; and a diffuser plate, installed on the back plate and located Above the light emitting device. 一種發光裝置的製備方法，其包括如下步驟：提供複數個發光晶片，每一發光晶片具有一上表面和一下表面；將所述發光晶片的下表面黏附於一擴張膜上； 將微珠均勻分散於所述發光晶片的上表面與相鄰所述發光晶片所形成的間隙中；去除未黏附於所述擴張膜上的微珠；將含發光粉粒的液體相施加於所述發光晶片的上表面及相鄰所述發光晶片所形成的間隙中，所述液體為不含黏合劑的水或揮發性溶劑；移除所述液體，以使所述發光粉粒及所述微珠凝結成塊，並形成發光層和導光層；以及於相應位置切割，以使所述微珠負載於所述發光晶片的側面；其中所述微珠包括反射型微珠、折射型微珠中的一種或它們之間的組合，所述導光層包括至少一層反射型微珠、至少一層折射型微珠或它們之間的組合，所述至少一層反射型微珠與所述至少一層折射型微珠自所述發光晶片所放出的光徑方向依次排列。 A method for preparing a light-emitting device includes the following steps: providing a plurality of light-emitting chips, each light-emitting chip having an upper surface and a lower surface; and adhering the lower surface of the light-emitting chip to an expansion film; Disperse the microbeads evenly in the gap formed by the upper surface of the light-emitting chip and the adjacent light-emitting chip; remove the microbeads that are not adhered to the expansion film; apply the liquid phase containing the light-emitting powder to the The upper surface of the light-emitting chip and the gap formed by the adjacent light-emitting chip, the liquid is water or a volatile solvent without a binder; the liquid is removed, so that the light-emitting powder particles and the The beads are condensed into a mass to form a light-emitting layer and a light-guiding layer; and cut at corresponding positions so that the beads are loaded on the side of the light-emitting chip; wherein the beads include reflective beads and refractive microbeads. One of the beads or a combination between them, the light guide layer includes at least one layer of reflective microbeads, at least one layer of refractive microbeads, or a combination between them, and the at least one layer of reflective microbeads and the at least one layer The refractive microbeads are arranged in sequence from the light path direction emitted by the light-emitting chip. 如請求項6所述之發光裝置，所述微珠包括反射型微珠、折射型微珠中的一種或它們之間的組合。 The light-emitting device according to claim 6, wherein the microbeads include one of reflective microbeads and refractive microbeads or a combination thereof. 如請求項7所述之發光裝置，在所述步驟將含發光粉粒的液體相施加於所述發光晶片的上表面及相鄰所述發光晶片所形成的間隙前，還包括向所述含發光粉粒的液體相中添加所述折射型微珠。 The light-emitting device according to claim 7, before applying the liquid phase containing light-emitting powder particles to the upper surface of the light-emitting chip and the gap formed by the adjacent light-emitting chip, further comprising: The refractive microbeads are added to the liquid phase of the luminescent powder particles. 如請求項7或8所述之發光裝置，其特徵在於，當所述微珠的粒徑大於等於所述發光晶片的厚度時，所述發光晶片的側面負載至少一層所述微珠；當所述微珠的粒徑小於所述發光晶片的厚度時，所述發光晶片的側面負載多層所述微珠。 The light-emitting device according to claim 7 or 8, wherein when the particle size of the microbeads is greater than or equal to the thickness of the light-emitting chip, the side surface of the light-emitting chip supports at least one layer of the microbeads; When the particle size of the microbeads is smaller than the thickness of the light-emitting chip, the side surface of the light-emitting chip supports multiple layers of the microbeads. 一種發光裝置的製備方法，其包括如下步驟：提供複數個發光晶片，每一發光晶片具有一上表面和一下表面；將所述發光晶片的下表面形成於一基底上； 將含微珠、發光粉粒的液體相施加於所述發光晶片的上表面及相鄰所述發光晶片所形成的間隙中，所述液體為不含黏結劑的水或揮發性溶劑，所述微珠為折射型微珠；移除所述液體，以使所述發光粉粒及所述微珠凝結成塊，並形成發光層和導光層；以及於相應位置切割，以使所述微珠負載於所述發光晶片的側面；其中所述微珠包括反射型微珠、折射型微珠中的一種或它們之間的組合，所述導光層包括至少一層反射型微珠、至少一層折射型微珠或它們之間的組合，所述至少一層反射型微珠與所述至少一層折射型微珠自所述發光晶片所放出的光徑方向依次排列。 A method for manufacturing a light-emitting device includes the following steps: providing a plurality of light-emitting chips, each light-emitting chip having an upper surface and a lower surface; and forming the lower surface of the light-emitting chip on a substrate; A liquid phase containing microbeads and luminescent powder particles is applied to the upper surface of the light-emitting chip and the gap formed by the adjacent light-emitting chip, and the liquid is water or a volatile solvent without a binder. The microbeads are refractive microbeads; the liquid is removed to make the luminescent powder particles and the microbeads agglomerate to form a light-emitting layer and a light guide layer; and cut at corresponding positions to make the microbeads The beads are supported on the side surface of the light-emitting chip; wherein the beads include one of reflective beads and refractive beads or a combination thereof, and the light guide layer includes at least one layer of reflective beads, and at least one layer The refractive microbeads or the combination therebetween, the at least one layer of reflective microbeads and the at least one layer of refractive microbeads are arranged in sequence from the light path direction emitted by the light-emitting chip. 如請求項10所述之發光裝置，當所述微珠的粒徑大於等於所述發光晶片的厚度時，所述發光晶片的側面負載至少一層所述微珠；當所述微珠的粒徑小於所述發光晶片的厚度時，所述發光晶片的側面負載多層所述微珠。 According to the light-emitting device of claim 10, when the particle size of the microbeads is greater than or equal to the thickness of the light-emitting chip, the side surface of the light-emitting chip supports at least one layer of the microbeads; When the thickness is less than the thickness of the light-emitting chip, the side surface of the light-emitting chip supports multiple layers of the microbeads. 一種光源模組，包括：一基板；至少一第一電極，安裝於所述基板上；以及至少一如請求項1至4中任意一項所述的發光裝置，每一發光晶片的下表面設有兩相對的第二電極，所述第二電極電性連接所述第一電極。 A light source module includes: a substrate; at least one first electrode mounted on the substrate; and at least one light-emitting device according to any one of claims 1 to 4, and the lower surface of each light-emitting chip is provided There are two opposite second electrodes, and the second electrodes are electrically connected to the first electrodes. 如請求項12所述之光源模組，所述光源模組還包括一透鏡，所述透鏡形成於所述發光裝置的上方。 According to the light source module according to claim 12, the light source module further includes a lens formed above the light emitting device. 如請求項12所述之光源模組，所述光源模組還包括一反光杯，所述發光裝置設置於所述反光杯內。 According to the light source module of claim 12, the light source module further includes a reflector cup, and the light-emitting device is arranged in the reflector cup.
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