WO2022213582A1 - 显示面板和显示装置 - Google Patents
显示面板和显示装置 Download PDFInfo
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- WO2022213582A1 WO2022213582A1 PCT/CN2021/126312 CN2021126312W WO2022213582A1 WO 2022213582 A1 WO2022213582 A1 WO 2022213582A1 CN 2021126312 W CN2021126312 W CN 2021126312W WO 2022213582 A1 WO2022213582 A1 WO 2022213582A1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K2102/301—Details of OLEDs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Definitions
- the embodiments of the present disclosure belong to the field of display technology, and in particular relate to a display panel and a display device.
- AMOLED Active-matrix organic light-emitting diode, active matrix organic light-emitting diode or active matrix organic light-emitting diode
- AMOLED display screens have entered the era of full screen and narrow borders. Users will bring a better user experience. Full screen, narrow frame, high resolution, curling wear, folding, etc. will definitely become an important development direction of AMOLED display products in the future.
- FMLOC Flexible Multi-Layer On Cell, flexible multi-layer structure
- FMLOC technology is to make a metal mesh electrode layer (Metal Mesh) on the packaging structure after the EVEN process (evaporation process) of each film layer of the light-emitting element and the packaging process of the light-emitting element to form the driving electrodes (Tx) and The sensing electrode (Rx) channel is used to realize the touch function of the display screen.
- FMLOC technology does not require an external touch panel, which can reduce the thickness of the screen, which is conducive to folding; at the same time, there is no fit tolerance, which can reduce the width of the frame.
- Embodiments of the present disclosure provide a display panel and a display device.
- embodiments of the present disclosure provide a display panel, including: a display substrate;
- a touch layer located on at least one side of the display substrate;
- the display substrate includes a display area and a binding area located on at least one side of the display area, the binding area includes a bending area and a first non-bending area, and the bending area is connected to the first non-bending area. fold zone adjacency;
- the display substrate further includes a first conductive layer; the first conductive layer is located at least in the bending region;
- the touch layer is located in the first non-bending area; the first boundary of the touch layer is located in the adjacent area between the bending area and the first non-bending area;
- the touch control layer includes a first electrode layer, an insulating layer and a second electrode layer which are arranged away from the first conductive layer in sequence; the second electrode layer overlaps with the edge of the first conductive layer,
- the orthographic projections of the first boundaries of the second electrode layer, the first electrode layer and the insulating layer on the display substrate do not overlap each other and are sequentially away from the bending region.
- the binding area further includes a second non-bending area, the second non-bending area is located on a side of the bending area away from the first non-bending area, and the second non-bending area is adjacent to the bending area;
- the touch layer is also located in the second non-bending area; the second boundary of the touch layer is located in the adjacent area of the bending area and the second non-bending area;
- Orthographic projections of the second boundary of the second electrode layer, the first electrode layer and the insulating layer on the display substrate do not overlap with each other and are sequentially away from the bending region.
- the first conductive layer further extends to the first non-bending region
- the orthographic projection of the first boundary of the second electrode layer, the first electrode layer and the insulating layer on the display substrate falls on the first conductive layer.
- the first conductive layer further extends to the second non-bending region
- the orthographic projection of the second boundary of the second electrode layer, the first electrode layer and the insulating layer on the display substrate falls on the first conductive layer.
- the orthographic projection of the first boundary of the second electrode layer on the display substrate overlaps the border of the bending region and the first non-bending region;
- the orthographic projection of the second boundary of the second electrode layer on the display substrate overlaps the bordering boundary of the bending area and the second non-bending area.
- an orthographic projection of the first boundary of the first electrode layer on the display substrate and an orthographic projection of the first boundary of the second electrode layer on the display substrate are separated by a first interval spacing
- the first distance is between the orthographic projection of the second boundary of the first electrode layer on the display substrate and the orthographic projection of the second boundary of the second electrode layer on the display substrate;
- the second distance is spaced between the orthographic projection of the second boundary of the first electrode layer on the display substrate and the orthographic projection of the second boundary of the insulating layer on the display substrate;
- the first pitch is less than or equal to the second pitch.
- the size of the first spacing ranges from 4 to 8 ⁇ m; the size of the second spacing ranges from 5 to 10 ⁇ m.
- the thickness of the insulating layer ranges from 2800 to 3200 angstroms
- the thickness of the first electrode layer ranges from 1800 to 2200 angstroms.
- the slope angle of the first boundary of the insulating layer ranges from 80° to 90°; the slope angle of the second boundary of the insulating layer ranges from 80° to 90°;
- the gradient angle range of the first boundary of the first electrode layer is 30-60°; the gradient angle range of the second boundary of the first electrode layer is 30-60°.
- the display substrate further includes a buffer layer, the buffer layer is located in the first non-bending region, and the buffer layer is disposed between the first electrode layer and the first conductive layer between;
- the first boundary of the buffer layer is located in the adjacent area of the bending area and the first non-bending area, and the orthographic projection of the first boundary of the buffer layer on the first conductive layer is the same as the first boundary of the buffer layer.
- the orthographic projection of the first boundary of the first electrode layer on the first conductive layer overlaps.
- the display substrate further includes a buffer layer, the buffer layer is located in the first non-bending region, and the buffer layer is disposed between the first electrode layer and the first conductive layer between;
- the first boundary of the buffer layer is located in the adjacent area of the bending area and the first non-bending area, and the orthographic projection of the first boundary of the buffer layer on the first conductive layer is located at the Between the orthographic projection of the first boundary of the second electrode layer on the first conductive layer and the orthographic projection of the first boundary of the first electrode layer on the first conductive layer.
- the buffer layer is also located in the second non-bending region
- the second boundary of the buffer layer is located in the adjacent area of the bending area and the second non-bending area, and the orthographic projection of the second boundary of the buffer layer on the first conductive layer is the same as the second boundary of the buffer layer.
- the orthographic projection of the second boundary of the first electrode layer on the first conductive layer overlaps.
- the buffer layer is also located in the second non-bending region
- the second boundary of the buffer layer is located in the adjacent area of the bending area and the second non-bending area, and the orthographic projection of the second boundary of the buffer layer on the first conductive layer is located at the Between the orthographic projection of the second boundary of the second electrode layer on the first conductive layer and the orthographic projection of the second boundary of the first electrode layer on the first conductive layer.
- the thickness of the buffer layer ranges from 800 to 1000 angstroms.
- the insulating layer further includes a third boundary
- the first conductive layer includes a first boundary, and the first boundary of the first conductive layer is located in the first non-bending region;
- the orthographic projection of the third boundary of the insulating layer on the display substrate is located on a side of the first boundary of the first conductive layer away from the bending region.
- the insulating layer further includes a fourth boundary
- the first conductive layer further includes a second boundary, and the second boundary of the first conductive layer is located in the second non-bending region;
- the orthographic projection of the fourth boundary of the insulating layer on the display substrate is located on a side away from the bending region of the second boundary of the first conductive layer.
- the display substrate further includes a flat layer and an inorganic insulating layer, and the flat layer and the inorganic insulating layer are sequentially disposed on a side of the first conductive layer away from the touch layer;
- the flat layer extends from the bending area to the first non-bending area and the second non-bending area; the inorganic insulating layer is located in the first non-bending area and the second non-bending area. bend zone.
- an embodiment of the present disclosure further provides a display device including the above-mentioned display panel.
- FIG. 1 is a schematic top view of a partial structure of a display screen binding area with an FMLOC touch layer in the disclosed technology
- FIG. 2 is an electron microscope view of the overlapping connection between the upper metal traces of the touch signal traces and the signal traces in the display screen along the AA section line in FIG. 1;
- FIG. 3 is an electron microscope view showing that the upper layer metal trace of the touch signal trace along the AA section line in FIG. 1 is broken at a position with a large fracture difference;
- FIG. 4 is a schematic cross-sectional view of the structure along the AA section line in FIG. 1;
- Fig. 5 is the enlarged schematic diagram of part B in Fig. 4;
- FIG. 6 is a schematic top view of the structure of a display panel according to an embodiment of the disclosure.
- FIG. 7 is a schematic cross-sectional view of the structure along the CC section line in FIG. 6;
- Fig. 8 is the enlarged schematic diagram of part D in Fig. 7;
- FIG. 9 is a top view of the structure of part H in FIG. 6;
- Figure 10 is a schematic cross-sectional view of the structure along the EE section line in 6;
- Fig. 11 is another kind of structural cross-sectional schematic diagram along the EE section line in Fig. 6;
- FIG. 12 is a schematic cross-sectional view of the structure along the FF section line in FIG. 6;
- FIG. 13 is a schematic top view of a partial structure of a display area of a display panel according to an embodiment of the disclosure.
- FIG. 14 is a schematic cross-sectional view of the structure along the section line GG in FIG. 13 .
- Embodiments of the present disclosure are not limited to the embodiments shown in the drawings, but include modifications of configurations formed based on manufacturing processes. Accordingly, the regions illustrated in the figures are of schematic nature and the shapes of the regions shown in the figures are illustrative of the specific shapes of the regions and are not intended to be limiting.
- a binding area 100 is provided on one side edge of the display screen with the FMLOC (Flexible Multi-Layer On Cell, flexible multi-layer structure) touch layer, various signal traces in the display screen and the FMLOC touch layer
- the touch signal traces 24 are routed to the binding area 100 for binding connection with the peripheral circuit board; the peripheral circuit board is used for various signal traces in the display screen and touch signal traces of the FMLOC touch layer 24 provides drive or control signals.
- the end area of the binding area 100 away from the display area of the display screen needs to be bent to the back side of the display screen.
- some areas in the binding area 100 are set as the flexible bending area 101 . So that the end area of the binding area 100 is bent to the back side of the display screen by bending in the flexible bending area 101 .
- the touch signal trace 24 of the FMLOC touch layer adopts a layer-changing design when routing to the flexible bending area 101 (ie, the Bending area), that is, when entering the flexible bending area 101, the FMLOC
- the touch signal wiring 24 of the touch layer is changed to the signal line in the display screen, and the signal line in the display screen is routed to the flexible bending area 101; after passing through the flexible bending area 101, the signal line in the display screen is changed.
- Layer-to-FMLOC touch layer touch signal traces 24, and the FMLOC touch layer touch signal traces 24 are connected to the binding connection terminals connected to the peripheral circuits.
- the FMLOC touch signal trace 24 is converted from two conductive layers stacked metal traces to only the upper layer metal trace.
- the traces 240 extend out and are overlapped and connected to the signal wires 11 in the display screen on the surface of the display screen, so that the FMLOC touch signal traces 24 can be layered to the signal wires 11 in the display screen.
- the buffer layer 13 and the insulating layer 22 are sandwiched between the upper metal trace 240 and the signal trace 11 in the display screen, and the buffer layer 13 and The boundary of the insulating layer 22 at the overlapping position of the upper metal wiring 240 and the signal line 11 in the display screen is flush; the signal line 11 in the display screen is disposed on the first planarizing film layer 116a, and the first planarizing film layer 116a is away from An inorganic insulating layer 12 is also provided on one side of the signal line 11 in the display screen; The inorganic insulating layer 12, the first planarizing film layer 116a and the second planarizing film layer 116b all extend from the display area of the display screen, and the second planarizing film layer 116b is between the FMLOC touch signal traces 24 and the display The layer-changing positions of the in-screen signal lines 11 are cut out (ie, via holes are formed at the layer-changing positions).
- the replacement The gap between the insulating layer 22 and the buffer layer 13 at the layer position is relatively large, which easily causes the upper metal wiring 240 to be broken at the layer changing position, so that the upper metal wiring 240 is disconnected, resulting in poor touch control.
- an embodiment of the present disclosure provides a display panel, referring to FIG. 6 .
- FIG. 10 Figure 9, Figure 11, including: display substrate 1; touch layer 2; on at least one side of display substrate 1; display substrate 1 includes display area 104 and a binding area 100 on at least one side of display area 104, binding The area 100 includes a bending area 101 and a first non-bending area 102, and the bending area 101 is adjacent to the first non-bending area 102; the display substrate 1 further includes a first conductive layer 10; the first conductive layer 10 is at least located in the bending area.
- the touch layer 2 is located in the first non-bending area 102; the first boundary 201 of the touch layer 2 is located in the adjacent area between the bending area 101 and the first non-bending area 102; A first electrode layer 21, an insulating layer 22 and a second electrode layer 23 provided on a conductive layer 10; the second electrode layer 23 overlaps with the edge of the first conductive layer 10, the second electrode layer 23, the first electrode layer 21 and the The orthographic projections of the first boundary of the insulating layer 22 on the display substrate 1 do not overlap each other and are successively away from the bending region 101 . As shown by the dotted box in FIG. 7 , the first boundary 201 of the touch layer 2 includes a plurality of different boundaries of the film layers included in the touch layer.
- the binding area 100 further includes a second non-bending area 103 , and the second non-bending area 103 is located at a portion of the bending area 101 away from the first non-bending area 102 . side, and the second non-bending area 103 is adjacent to the bending area 101; the touch layer 2 is also located in the second non-bending area 103; the second boundary 202 of the touch layer 2 is located between the bending area 101 and the second non-bending area
- the adjacent area of the folded area 103 ; the orthographic projections of the second boundary of the second electrode layer 23 , the first electrode layer 21 and the insulating layer 22 on the display substrate 1 do not overlap each other and are sequentially away from the folded area 101 .
- the second boundary 202 in the touch layer 2 includes a plurality of different boundaries of the film layers included in the touch layer.
- the first boundary 201 of the touch layer 2 includes the first boundary of the second electrode layer 23 , the first electrode layer 21 and the insulating layer 22 .
- the second boundary 202 of the touch layer 2 includes the second boundary of the second electrode layer 23 , the first electrode layer 21 and the insulating layer 22 .
- the second non-bending area 103 of the binding area 100 is bent to the back side of the display substrate 1 through the bending area 101 , and the back side of the display substrate 1 is disposed opposite to the display side of the display substrate 1 .
- the second electrode layer 23 overlaps with the edge of the first conductive layer 10 , so as to realize the adjacent area between the bending area 101 and the first non-bending area 102 , the second electrode layer 23 of the touch layer 2 is replaced with the first conductive layer 10 of the display substrate 1; at the same time, the adjacent area between the bending area 101 and the second non-bending area 103 is realized, and the first conductive layer of the display substrate 1 is realized. 10 Change the layer to the second electrode layer 23 of the touch layer 2 .
- the display substrate 1 further includes a planarization layer 116 and an inorganic insulating layer 12, and the planarization layer 116 and the inorganic insulating layer 12 are sequentially disposed on the side of the first conductive layer 10 away from the touch layer 2; planarization The layer 116 extends from the bending area 101 to the first non-bending area 102 and the second non-bending area 103 ; the inorganic insulating layer 12 is located in the first non-bending area 102 and the second non-bending area 103 .
- the planarization layer 116 and the inorganic insulating layer 12 both extend from the display area of the display substrate 1 .
- the first conductive layer 10 and the organic insulating film layer that supports and protects it are retained.
- the protective layer above the layer 10 can ensure good bending performance of the bending region 101 and prevent the signal lines in the bending region 101 from being broken during the bending process.
- first non-bending area 102 and the second non-bending area 103 not only the first conductive layer 10 and the organic insulating film layer for carrying and protecting it are retained, but also the inorganic insulating film extending from the display area of the display substrate 1 is retained layer 12, so as to ensure that the film layer settings of the first non-bending area 102 and the second non-bending area 103 are consistent.
- the second electrode layer 23 the first electrode
- the orthographic projections of the first boundary and the second boundary of the layer 21 and the insulating layer 22 on the display substrate 1 do not overlap each other and are in turn away from the bending area 101 , and the bending area 101 and the non-bending area can be in the binding area 100 .
- the film layer break between the second electrode layer 23 of the touch layer 2 and the first conductive layer 10 of the display substrate 1 is reduced, so as to prevent the second electrode layer 23 of the touch layer 2 from being at a relatively high level.
- the fracture occurs at the large breaking difference, so as to avoid the poor touch of the touch layer 2 and ensure the touch quality of the touch layer 2 .
- the first conductive layer 10 also extends to the first non-bending region 102 ; the orthographic projection of the first boundary of the second electrode layer 23 , the first electrode layer 21 and the insulating layer 22 on the display substrate 1 on the first conductive layer 10 .
- the first conductive layer 10 also extends to the second non-bending region 103 ; the orthographic projection of the second boundary of the second electrode layer 23 , the first electrode layer 21 and the insulating layer 22 on the display substrate 1 on the first conductive layer 10 .
- the orthographic projection of the first boundary of the second electrode layer 23 on the display substrate 1 overlaps the boundary boundary between the bending region 101 and the first non-bending region 102 ; the second boundary of the second electrode layer 23 The orthographic projection of the boundary on the display substrate 1 overlaps with the bordering boundary of the bending area 101 and the second non-bending area 103 . That is, in the bending region 101, the touch layer 2 is not provided.
- first distance a between the orthographic projection of the first boundary of the first electrode layer 21 on the display substrate 1 and the orthographic projection of the first boundary of the second electrode layer 23 on the display substrate 1;
- second distance b between the orthographic projection of the first boundary of an electrode layer 21 on the display substrate 1 and the orthographic projection of the first boundary of the insulating layer 22 on the display substrate 1;
- the second boundary of the first electrode layer 21 is
- first distance a between the orthographic projection on the display substrate 1 and the orthographic projection of the second boundary of the second electrode layer 23 on the display substrate 1 ;
- a second distance b is spaced between the orthographic projection of the second boundary with the insulating layer 22 on the display substrate 1 ; the first distance a is less than or equal to the second distance b.
- the size of the first spacing a ranges from 4 to 8 ⁇ m; the size of the second spacing b ranges from 5 to 10 ⁇ m.
- the thickness of the insulating layer 22 ranges from 2800 to 3200 angstroms; the thickness of the first electrode layer 21 ranges from 1800 to 2200 angstroms.
- the thickness of the insulating layer 22 is the dimension of the insulating layer along the direction away from the display substrate 1 .
- the thickness of the first electrode layer 21 is the dimension of the first electrode layer 21 along the direction away from the display substrate 1 .
- the thicknesses of the insulating layer 22 and the first electrode layer 21 are much smaller than the stacked thicknesses of the inorganic insulating film layer and the buffer layer in FIGS. 2-5 , so that the difference between the insulating layer 22 and the first electrode layer 21 is different.
- the slope angle ⁇ 1 of the first boundary of the insulating layer 22 ranges from 80° to 90°; the slope angle ⁇ 2 of the second boundary of the insulating layer 22 ranges from 80° to 90°; The gradient angle ⁇ 1 of the boundary ranges from 30° to 60°; the gradient angle ⁇ 2 of the second boundary of the first electrode layer 21 ranges from 30° to 60°.
- the second boundary of the insulating layer 22 and the second boundary of the first electrode layer 21 are staggered from each other, so the slope angles of their respective first boundaries
- the formed discontinuities and the discontinuities formed by the gradient angles of their respective second boundaries are smaller than the discontinuities formed by the gradient angles of the boundaries of the stacked inorganic insulating film layers and the buffer layers in FIG. 2 to FIG. 5 , thereby avoiding the
- the second electrode layer 23 is fractured due to the large difference, thereby avoiding poor touch control of the touch layer 2 .
- the display substrate 1 further includes a buffer layer 13, the buffer layer 13 is located in the first non-bending region 102, and the buffer layer 13 is disposed between the first electrode layer 21 and the first conductive layer 10; the buffer layer 13
- the first boundary of the buffer layer 13 is located in the adjacent area of the bending region 101 and the first non-bending region 102, and the orthographic projection of the first boundary of the buffer layer 13 on the first conductive layer 10 and the first boundary of the first electrode layer 21 are in The orthographic projections on the first conductive layer 10 overlap.
- the first electrode layer 21 is a metal conductive layer
- the planarization layer 116 is an organic insulating layer. The provision of the buffer layer 13 can enhance the adhesion of the first electrode layer 21 on the planarization layer 116 .
- the buffer layer 13 is also located in the second non-bending area 103 ; the second boundary of the buffer layer 13 is located in the adjacent area between the bending area 101 and the second non-bending area 103 , and the second boundary of the buffer layer 13
- the orthographic projection of the boundary on the first conductive layer 10 overlaps with the orthographic projection of the second boundary of the first electrode layer 21 on the first conductive layer 10 .
- the thickness of the buffer layer 13 ranges from 800 to 1000 angstroms.
- the thickness of the buffer layer 13 is the dimension of the buffer layer 13 along the direction away from the display substrate 1 .
- the thickness of the buffer layer 13 is small, so that the first boundary and the second boundary of the buffer layer 13 overlapping with the first electrode layer 21 will not form a large gap at the layer change position, thereby avoiding a large gap.
- the resulting second electrode layer 23 is fractured, thereby preventing the touch control layer 2 from being defective.
- the orthographic projection of the first boundary of the buffer layer 13 on the first conductive layer 10 may also be located at the sum of the orthographic projection of the first boundary of the second electrode layer 23 on the first conductive layer 10 .
- the first boundary of the first electrode layer 21 is between the orthographic projections on the first conductive layer 10 . That is, the first boundary of the buffer layer 13 is staggered from the first boundary of the second electrode layer 23 and the first boundary of the first electrode layer 21 . This arrangement can further prevent the first boundary of the buffer layer 13 from forming a large break at the layer change position, thereby avoiding the breakage of the second electrode layer 23 caused by the large break, thereby preventing the touch layer from being broken. 2 Bad touch.
- the orthographic projection of the second boundary of the buffer layer 13 on the first conductive layer 10 is located at the orthographic projection of the second boundary of the second electrode layer 23 on the first conductive layer 10 and the projection of the first electrode layer 21
- the second boundary is between orthographic projections on the first conductive layer 10 . That is, the second boundary of the buffer layer 13 is staggered from the second boundary of the second electrode layer 23 and the second boundary of the first electrode layer 21 .
- This arrangement can further prevent the second boundary of the buffer layer 13 from forming a large break at the layer change position, thereby avoiding the breakage of the second electrode layer 23 caused by the large break, thereby preventing the touch layer from being damaged. 2 Bad touch.
- the insulating layer 22 further includes a third boundary s1; the first conductive layer 10 includes a first boundary z1, and the first boundary z1 of the first conductive layer 10 is located in the first non-bending region 102; The orthographic projection of the third boundary s1 on the display substrate 1 is located on the side of the first boundary z1 of the first conductive layer 10 away from the bending region 101 .
- the insulating layer 22 further includes a fourth boundary s2; the first conductive layer 10 further includes a second boundary z2, and the second boundary z2 of the first conductive layer 10 is located in the second non-bending region 103; the insulating layer 22
- the orthographic projection of the fourth boundary s2 on the display substrate 1 is located on the side away from the bending region 101 of the second boundary z2 of the first conductive layer 10 .
- the first electrode layer 21 and the second electrode layer 23 overlap each other in the regions other than the bending region 101 , the first non-bending region 102 and the second non-bending region 103 in the bonding region 100 ,
- the insulating layer 22 is not disposed between the two, so that the cross-sectional area of the touch electrode layer can be increased, thereby reducing the wiring resistance of the touch electrode layer.
- the display substrate 1 further includes a display area 104 .
- the display substrate 1 includes a substrate, a driving circuit layer disposed on the substrate, a display device disposed on the driving circuit layer, and a pair of The encapsulation layer in which the display device is encapsulated.
- the substrate may be a single-layer glass substrate, or may include a plurality of polyimide layers 140 and inorganic material layers 141 stacked in sequence; the inorganic material layer 141 may be made of materials such as silicon nitride, silicon oxide, etc.
- the driving circuit layer may include thin film transistors and capacitor structures.
- the thin film transistor may be a top-gate type, and the thin film transistor may include an active layer 109 , a first gate insulating layer 105 , a gate electrode 106 , a second gate insulating layer 108 , an interlayer dielectric layer 142 , a source electrode 110 , and a drain electrode 111 .
- the active layer 109 may be formed on the substrate, the first gate insulating layer 105 covers the active layer 109, the gate 106 is formed on the side of the first gate insulating layer 105 away from the active layer 109, and the second gate insulating layer 108 covers the gate electrode 106 and the first gate insulating layer 105, the interlayer dielectric layer 142 covers the second gate insulating layer 108, the source electrode 110 and the drain electrode 111 are formed on the side of the interlayer dielectric layer 142 away from the substrate and are respectively located at the gate electrode On the opposite sides of 106, the source electrode 110 and the drain electrode 111 can be respectively contacted with opposite sides of the active layer 109 through vias (eg, metal vias). It should be understood that the thin film transistor can also be of bottom gate type.
- the capacitor structure may include a first electrode plate 130 and a second electrode plate 131 , the first electrode plate 130 and the gate electrode 106 are disposed in the same layer, and the second electrode plate 131 is located between the second gate insulating layer 108 and the layer between the intermediate dielectric layers 142 and opposite to the first electrode plate 130 .
- the materials of the gate 106 and the first electrode plate 130 and the second electrode plate 131 may include metal materials or alloy materials, such as molybdenum, aluminum, and titanium.
- the source electrode 110 and the drain electrode 111 may include metal materials or alloy materials, such as metal single-layer or multi-layer structures formed of molybdenum, aluminum, titanium, etc. Titanium three-layer metal stack (Al/Ti/Al), etc.
- the display device may include a first electrode 112 and a pixel defining part 113 sequentially formed on the interlayer dielectric layer 142 , and it should be understood that the display device may further include a light emitting part 114 and a second electrode 115 .
- a planarization layer 116 is formed between the interlayer dielectric layer 142 and the first electrode 112 .
- the first electrode 112 can be electrically connected to the drain 111 through metal vias, and the first electrode 112 can be an anode, which can be ITO (indium tin oxide), indium zinc oxide (IZO), zinc oxide (ZnO) ) and other materials; the pixel defining portion 113 can cover the planarization layer 116 , the pixel defining portion 113 can be made of organic materials, such as organic materials such as photoresist, and the pixel defining portion 113 has exposed first The pixel opening of the electrode 112; the light emitting part 114 is located in the pixel opening and formed on the first electrode 112, the light emitting part 114 may comprise a small molecular organic material or a polymer molecular organic material, and may be a fluorescent light emitting material or a phosphorescent light emitting material, and may Red light, green light, blue light, or white light, etc.; and, according to different actual needs, in different examples, the light emitting part 114 may further include an electron injection layer, an electron transport
- the second electrode 115 covers the light-emitting part 114, and the polarity of the second electrode 115 is opposite to the polarity of the first electrode 112; the second electrode 115 can be a cathode, and the cathode can be lithium (Li ), aluminum (Al), magnesium (Mg), silver (Ag) and other metal materials.
- first electrode 112 , the light-emitting portion 114 and the second electrode 115 may constitute one light-emitting sub-pixel 1d.
- the portion of the display device located in the display area 104 may include a plurality of light-emitting sub-pixels 1d arranged in an array.
- first electrodes 112 of the light-emitting sub-pixels 1d are independent of each other, and the second electrodes 115 of the light-emitting sub-pixels 1d are connected over the entire surface.
- the side of the pixel defining portion 113 away from the interlayer dielectric layer 142 may further be provided with a support portion 132, and the support portion 132 may play the role of supporting the protective film layer (not shown in the figure) to avoid protection
- the film layer is in contact with the first electrode 112 or other traces, which causes the first electrode 112 or other traces to be easily damaged.
- this protective film layer mainly occurs in the process of transferring the semi-finished product to avoid damage to the semi-finished product during the transfer process. Specifically: in the process of transferring the substrate on which the supporting portion 132 is fabricated to the evaporation line , which can be covered with a protective film layer, and the protective film layer is removed when the luminescent material needs to be evaporated.
- the material of the support portion 132 may be the same as the material of the pixel defining portion 113 , and the support portion 132 and the pixel defining portion 113 may be formed by the same patterning process, but not limited thereto, the material of the support portion 132 may also be Different from the material of the pixel defining portion 113 , the supporting portion 132 and the pixel defining portion 113 may also be formed by different patterning processes.
- the first electrode 112 can also be electrically connected to the drain electrode 111 through the transfer electrode 133 .
- the planarization layer 116 has a double-layer structure, and may specifically include a first planarization film (PLN1) layer 116a and a second planarization film (PLN2) layer 116b formed in sequence.
- a passivation film (PVX) layer 134 may also be formed between the intermediate dielectric layers 142, and the passivation film layer 134 may be formed of materials such as silicon oxide, silicon nitride, or silicon oxynitride; the passivation film layer 134 covers the source electrode 110, The drain electrode 111; and the transfer electrode 133 is formed between the first planarizing film layer 116a and the second planarizing film layer 116b, and passes through the via holes ( For example, a metal via hole is electrically connected to the drain electrode 111 ; and the first electrode 112 can be electrically connected to the via electrode 133 through a via hole (for example, a metal via hole) on the second planarization film layer 116b.
- a metal via hole is electrically connected to the drain electrode 111 ; and the first electrode 112 can be electrically connected to the via electrode 133 through a via hole (for example, a metal via hole) on the second planarization film layer 116b.
- the encapsulation layer 118 is used to encapsulate the display device in the display area 104 , that is, the binding area 100 is not provided with an encapsulation layer.
- the encapsulation layer 118 includes a first inorganic encapsulation thin film layer 118a, an organic encapsulation thin film layer 118b and a second inorganic encapsulation thin film layer 118c which are stacked in sequence.
- the first inorganic encapsulation thin film layer 118a and the second inorganic encapsulation thin film layer 118c are used to prevent water and oxygen from entering the light emitting part 114 of the display area 104; the first inorganic encapsulation thin film layer 118a and the second inorganic encapsulation thin film layer 118c can be Made of inorganic materials such as silicon nitride and silicon oxide.
- the organic encapsulation thin film layer 118b is used for planarization to facilitate the fabrication of the second inorganic encapsulation thin film layer 118c.
- the organic encapsulation thin film layer 118b can be made of acrylic-based polymer, silicon-based polymer and other materials.
- the first inorganic encapsulation film layer 118a and the second inorganic encapsulation film layer 118c can be fabricated by chemical vapor deposition process, but not limited thereto, physical vapor deposition process can also be used; and the organic packaging film layer 118b is formed by spraying It is made by ink printing process, but it is not limited to this, and spraying process can also be used.
- the first conductive layer 10 of the bending region 101 and the transfer electrode 133 are made of the same material and are provided in the same layer, and the pixel defining portion, the supporting portion and the second planarizing film layer are removed in the bending region 101 , and the remaining The first planarization film layer 116a.
- the first non-bending area 102 and the second non-bending area 103 not only the first conductive layer 10 and the organic insulating film layer for carrying and protecting it, such as the planarization layer 116 , but also the display substrate 1 are retained.
- the inorganic insulating layer 12 extending from the region, such as the interlayer dielectric layer 142 , the passivation film layer 134 , the first gate insulating layer 105 , and the second gate insulating layer 108 .
- the touch layer 2 is disposed on the side of the encapsulation layer 118 away from the display device, and the second electrode layer 23 of the touch layer 2 includes a plurality of driving electrodes
- the sensing electrode strips 233 are formed by connection; the length direction of each driving electrode strip 231 is along the row direction of the array, and a plurality of driving electrode strips 231 are arranged in sequence along the column direction of the array; The positions and spaces are intersected, and the insulating layer 22 is disposed between each bridge portion 210 and the driving electrode strips 231 .
- the orthographic projection of the touch layer 2 on the display substrate 1 is located in the area where the pixel defining parts 113 are located between the light emitting parts 114 .
- Both the second electrode layer 23 and the first electrode layer 21 are mesh electrodes.
- the second electrode layer 23 and the first electrode layer 21 have a metal stack structure, for example, both are a titanium-aluminum-titanium stack structure. Since the orthographic projection of the touch layer 2 on the display substrate 1 is located in the area where the pixel defining portion 113 is located, the setting of the touch layer 2 will not affect the light transmittance of the display substrate 1 .
- the patterns of the first electrode layer 21 , the insulating layer 22 and the second electrode layer 23 in the touch layer 2 can be sequentially prepared on the package by a patterning process (including steps of film formation, exposure, development, etching, etc.).
- layer 118 which can not only reduce the overall thickness of the display panel, thereby facilitating the folding of the flexible display panel, but also avoid the bonding tolerance of the touch panel compared to hanging the touch panel on the display panel. It is beneficial to reduce the border width of the display panel.
- the mask patterns for preparing the first electrode layer, the insulating layer and the second electrode layer are adjusted respectively, so that the second electrode layer and the first electrode layer are The orthographic projections of the first boundary and the second boundary of the insulating layer on the display substrate do not overlap each other and are successively away from the bending region.
- the second electrode layer, the first electrode are formed in the adjacent area between the bending area and the first non-bending area and the adjacent area between the bending area and the second non-bending area.
- the orthographic projections of the first boundary and the second boundary of the layer and the insulating layer on the display substrate do not overlap each other and are in turn away from the bending area.
- Embodiments of the present disclosure also provide a display device, including the display panel in the above-mentioned embodiments.
- the touch quality of the display device is ensured under the condition of ensuring the display quality of the display device.
- the display device can be: OLED panel, OLED TV, mobile phone, tablet computer, monitor, notebook computer, digital photo frame, navigator, and any other product or component with display function.
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Abstract
本公开实施例提供一种显示面板,包括:显示基板;触控层;位于所述显示基板的至少一侧;所述显示基板包括显示区和位于所述显示区至少一侧的绑定区,所述绑定区包括弯折区和第一非弯折区,所述弯折区与所述第一非弯折区邻接;所述显示基板还包括第一导电层;所述第一导电层至少位于所述弯折区;所述触控层位于所述第一非弯折区;所述触控层的第一边界位于所述弯折区与所述第一非弯折区的邻接区域;所述触控层包括依次远离所述第一导电层设置的第一电极层、绝缘层和第二电极层;所述第二电极层与所述第一导电层的边缘搭接,所述第二电极层、所述第一电极层和所述绝缘层的第一边界在所述显示基板上的正投影互不交叠且依次远离所述弯折区。
Description
本公开实施例属于显示技术领域,具体涉及一种显示面板和显示装置。
随着AMOLED(Active-matrix organic light-emitting diode,有源矩阵有机发光二极体或主动矩阵有机发光二极体)显示技术的迅速发展,AMOLED显示屏进入了全面屏以及窄边框时代,为了给用户带来更优的使用体验,全面屏、窄边框、高分辨率、卷曲穿戴、折叠等必将成为未来AMOLED显示产品的重要发展方向。
为了实现AMOLED显示屏更轻更薄以及集成度更高,FMLOC(Flexible Multi-Layer On Cell,柔性多层结构)技术孕育而生。FMLOC技术是在发光元件各膜层的EVEN工艺(蒸镀工艺)以及发光元件的封装工艺后,在封装结构上制作金属网格电极层(Metal Mesh),构成FMLOC技术的驱动电极(Tx)和感应电极(Rx)通道以实现显示屏的触控功能。FMLOC技术无需外挂触控面板,可以减小屏幕厚度,进而有利于折叠;同时没有贴合公差,可减小边框宽度。
发明内容
本公开实施例提供一种显示面板和显示装置。
第一方面,本公开实施例提供一种显示面板,包括:显示基板;
触控层;位于所述显示基板的至少一侧;
所述显示基板包括显示区和位于所述显示区至少一侧的绑定区,所述绑定区包括弯折区和第一非弯折区,所述弯折区与所述第一非弯折区邻接;
所述显示基板还包括第一导电层;所述第一导电层至少位于所述弯 折区;
所述触控层位于所述第一非弯折区;所述触控层的第一边界位于所述弯折区与所述第一非弯折区的邻接区域;
所述触控层包括依次远离所述第一导电层设置的第一电极层、绝缘层和第二电极层;所述第二电极层与所述第一导电层的边缘搭接,
所述第二电极层、所述第一电极层和所述绝缘层的第一边界在所述显示基板上的正投影互不交叠且依次远离所述弯折区。
在一些实施例中,所述绑定区还包括第二非弯折区,所述第二非弯折区位于所述弯折区的远离所述第一非弯折区的一侧,且所述第二非弯折区与所述弯折区邻接;
所述触控层还位于所述第二非弯折区;所述触控层的第二边界位于所述弯折区与所述第二非弯折区的邻接区域;
所述第二电极层、所述第一电极层和所述绝缘层的第二边界在所述显示基板上的正投影互不交叠且依次远离所述弯折区。
在一些实施例中,所述第一导电层还延伸至所述第一非弯折区;
所述第二电极层、所述第一电极层和所述绝缘层的第一边界在所述显示基板上的正投影落在所述第一导电层上。
在一些实施例中,所述第一导电层还延伸至所述第二非弯折区;
所述第二电极层、所述第一电极层和所述绝缘层的第二边界在所述显示基板上的正投影落在所述第一导电层上。
在一些实施例中,所述第二电极层的第一边界在所述显示基板上的正投影与所述弯折区和所述第一非弯折区的接壤边界交叠;
所述第二电极层的第二边界在所述显示基板上的正投影与所述弯折区和所述第二非弯折区的接壤边界交叠。
在一些实施例中,所述第一电极层的第一边界在所述显示基板上的正投影与所述第二电极层的第一边界在所述显示基板上的正投影之间间 隔第一间距;
所述第一电极层的第一边界在所述显示基板上的正投影与所述绝缘层的第一边界在所述显示基板上的正投影之间间隔第二间距;
所述第一电极层的第二边界在所述显示基板上的正投影与所述第二电极层的第二边界在所述显示基板上的正投影之间间隔所述第一间距;
所述第一电极层的第二边界在所述显示基板上的正投影与所述绝缘层的第二边界在所述显示基板上的正投影之间间隔所述第二间距;
所述第一间距小于或等于所述第二间距。
在一些实施例中,所述第一间距的尺寸范围为4~8μm;所述第二间距的尺寸范围为5~10μm。
在一些实施例中,所述绝缘层的厚度范围为2800~3200埃;
所述第一电极层的厚度范围为1800~2200埃。
在一些实施例中,所述绝缘层的第一边界的坡度角范围为80~90°;所述绝缘层的第二边界的坡度角范围为80~90°;
所述第一电极层的第一边界的坡度角范围为30~60°;所述第一电极层的第二边界的坡度角范围为30~60°。
在一些实施例中,所述显示基板还包括缓冲层,所述缓冲层位于所述第一非弯折区,且所述缓冲层设置于所述第一电极层和所述第一导电层之间;
所述缓冲层的第一边界位于所述弯折区与所述第一非弯折区的邻接区域,且所述缓冲层的第一边界在所述第一导电层上的正投影与所述第一电极层的第一边界在所述第一导电层上的正投影交叠。
在一些实施例中,所述显示基板还包括缓冲层,所述缓冲层位于所述第一非弯折区,且所述缓冲层设置于所述第一电极层和所述第一导电层之间;
所述缓冲层的第一边界位于所述弯折区与所述第一非弯折区的邻接 区域,且所述缓冲层的第一边界在所述第一导电层上的正投影位于所述第二电极层的第一边界在所述第一导电层上的正投影和所述第一电极层的第一边界在所述第一导电层上的正投影之间。
在一些实施例中,所述缓冲层还位于所述第二非弯折区;
所述缓冲层的第二边界位于所述弯折区与所述第二非弯折区的邻接区域,且所述缓冲层的第二边界在所述第一导电层上的正投影与所述第一电极层的第二边界在所述第一导电层上的正投影交叠。
在一些实施例中,所述缓冲层还位于所述第二非弯折区;
所述缓冲层的第二边界位于所述弯折区与所述第二非弯折区的邻接区域,且所述缓冲层的第二边界在所述第一导电层上的正投影位于所述第二电极层的第二边界在所述第一导电层上的正投影和所述第一电极层的第二边界在所述第一导电层上的正投影之间。
在一些实施例中,所述缓冲层的厚度范围为800~1000埃。
在一些实施例中,所述绝缘层还包括第三边界;
所述第一导电层包括第一边界,所述第一导电层的第一边界位于所述第一非弯折区;
所述绝缘层的第三边界在所述显示基板上的正投影位于所述第一导电层的第一边界的远离所述弯折区的一侧。
在一些实施例中,所述绝缘层还包括第四边界;
所述第一导电层还包括第二边界,所述第一导电层的第二边界位于所述第二非弯折区;
所述绝缘层的第四边界在所述显示基板上的正投影位于所述第一导电层的第二边界的远离所述弯折区的一侧。
在一些实施例中,所述显示基板还包括平坦层和无机绝缘层,所述平坦层和所述无机绝缘层依次设置于所述第一导电层的背离所述触控层的一侧;
所述平坦层由所述弯折区延伸至所述第一非弯折区和所述第二非弯折区;所述无机绝缘层位于所述第一非弯折区和所述第二非弯折区。
第二方面,本公开实施例还提供一种显示装置,包括上述显示面板。
附图用来提供对本公开实施例的进一步理解,并且构成说明书的一部分,与本公开实施例一起用于解释本公开,并不构成对本公开的限制。通过参考附图对详细示例实施例进行描述,以上和其它特征和优点对本领域技术人员将变得更加显而易见,在附图中:
图1为公开技术中具有FMLOC触控层的显示屏绑定区的局部结构俯视示意图;
图2为沿图1中AA剖切线的触控信号走线的上层金属走线与显示屏内信号线搭接的电子显微镜图;
图3为沿图1中AA剖切线的触控信号走线的上层金属走线在断差较大位置处出现断裂的电子显微镜图;
图4为沿图1中AA剖切线的结构剖视示意图;
图5为图4中B部分的放大示意图;
图6为本公开实施例中显示面板的结构俯视示意图;
图7为沿图6中CC剖切线的结构剖视示意图;
图8为图7中D部分的放大示意图;
图9为图6中H部分的结构俯视图;
图10为沿6中EE剖切线的结构剖视示意图;
图11为沿图6中EE剖切线的另一种结构剖视示意图;
图12为沿图6中FF剖切线的结构剖视示意图;
图13为本公开实施例中显示面板显示区的局部结构俯视示意图;
图14为沿图13中GG剖切线的结构剖视示意图。
为使本领域技术人员更好地理解本公开实施例的技术方案,下面结合附图和具体实施方式对本公开实施例提供的一种显示面板和显示装置作进一步详细描述。
在下文中将参考附图更充分地描述本公开实施例,但是所示的实施例可以以不同形式来体现,且不应当被解释为限于本公开阐述的实施例。反之,提供这些实施例的目的在于使本公开透彻和完整,并将使本领域技术人员充分理解本公开的范围。
本公开实施例不限于附图中所示的实施例,而是包括基于制造工艺而形成的配置的修改。因此,附图中例示的区具有示意性属性,并且图中所示区的形状例示了区的具体形状,但并不是旨在限制性的。
参照图1,具有FMLOC(Flexible Multi-Layer On Cell,柔性多层结构)触控层的显示屏一侧边缘设置有绑定区100,显示屏内的各种信号走线以及FMLOC触控层的触控信号走线24都走线至绑定区100,以便与***电路板绑定连接;***电路板用于为显示屏内的各种信号走线以及FMLOC触控层的触控信号走线24提供驱动或控制信号。为了实现显示屏的窄边框,绑定区100的远离显示屏显示区的末端区域需要弯折至显示屏的背侧,相应地,绑定区100内有部分区域设置为柔性弯折区101,以便绑定区100的末端区域通过在该柔性弯折区101进行弯折而弯折至显示屏的背侧。
针对上述具有FMLOC触控层的显示屏,为了确保柔性弯折区101的良好弯折性能以及确保弯折至显示屏背侧的绑定区部分的膜层设置与未弯折到显示屏背侧的绑定区部分一致,目前FMLOC触控层触控信号走线24在走线至柔性弯折区101(即Bending区)时采取换层设计,即在进入柔性弯折区101时,将FMLOC触控层触控信号走线24换层至显示屏内信号线上,由显示屏内信号线走线至柔性弯折区101;经过柔性弯折区 101之后,再由显示屏内信号线换层至FMLOC触控层触控信号走线24,由FMLOC触控层触控信号走线24接入与***电路连接的绑定连接端。
参照图2-图5,在FMLOC触控信号走线24与显示屏内信号线11的换层位置处,FMLOC触控信号走线24由两个导电层叠置的金属走线转换为仅上层金属走线240延伸而出并与显示屏表层的显示屏内信号线11搭接连接,从而实现FMLOC触控信号走线24换层至显示屏内信号线11。在FMLOC触控信号走线24仅上层金属走线240延伸而出的区域,上层金属走线240与显示屏内信号线11之间夹设有缓冲层13和绝缘层22,且缓冲层13和绝缘层22在上层金属走线240与显示屏内信号线11搭接位置处的边界平齐;显示屏内信号线11设置于第一平坦化膜层116a上,第一平坦化膜层116a背离显示屏内信号线11的一侧还设置有无机绝缘层12;第一平坦化膜层116a靠近缓冲层13的一侧还设置有第二平坦化膜层116b。无机绝缘层12、第一平坦化膜层116a和第二平坦化膜层116b均从显示屏的显示区内延伸而出,且第二平坦化膜层116b在FMLOC触控信号走线24与显示屏内信号线11的换层位置处被挖除(即在换层位置处形成过孔)。由于绝缘层22和缓冲层13的叠置厚度较大(约3600~4200埃),且叠置的绝缘层22和缓冲层13边界的坡度角较大(约80~90°),所以使得换层位置处绝缘层22和缓冲层13边界形成的断差较大,很容易导致上层金属走线240在该换层位置处断裂,以致上层金属走线240断开,造成触控不良。
针对上述换层位置处无机绝缘膜层和缓冲层边界形成的断差较大,容易导致上层金属走线断开,导致触控不良的问题,本公开实施例提供一种显示面板,参照图6-图9,图11,包括:显示基板1;触控层2;位于显示基板1的至少一侧;显示基板1包括显示区104和位于显示区104至少一侧的绑定区100,绑定区100包括弯折区101和第一非弯折区102,弯折区101与第一非弯折区102邻接;显示基板1还包括第一导电 层10;第一导电层10至少位于弯折区101;触控层2位于第一非弯折区102;触控层2的第一边界201位于弯折区101与第一非弯折区102的邻接区域;触控层2包括依次远离第一导电层10设置的第一电极层21、绝缘层22和第二电极层23;第二电极层23与第一导电层10的边缘搭接,第二电极层23、第一电极层21和绝缘层22的第一边界在显示基板1上的正投影互不交叠且依次远离弯折区101。如图7中虚线框所示,触控层2中第一边界201包含触控层中所包含膜层的多个不同的边界。
在一些实施例中,参照图6及图10,绑定区100还包括第二非弯折区103,第二非弯折区103位于弯折区101的远离第一非弯折区102的一侧,且第二非弯折区103与弯折区101邻接;触控层2还位于第二非弯折区103;触控层2的第二边界202位于弯折区101与第二非弯折区103的邻接区域;第二电极层23、第一电极层21和绝缘层22的第二边界在显示基板1上的正投影互不交叠且依次远离弯折区101。触控层2中第二边界202包含触控层中所包含膜层的多个不同的边界。
其中,触控层2的第一边界201包括第二电极层23、第一电极层21和绝缘层22的第一边界。触控层2的第二边界202包括第二电极层23、第一电极层21和绝缘层22的第二边界。绑定区100的第二非弯折区103通过弯折区101弯折到显示基板1的背侧,显示基板1的背侧与显示基板1的显示侧相对设置。在弯折区101与第一非弯折区102的邻接区域,第二电极层23与第一导电层10的边缘搭接,从而实现弯折区101与第一非弯折区102的邻接区域,触控层2的第二电极层23换层至显示基板1的第一导电层10;同时实现弯折区101与第二非弯折区103的邻接区域,显示基板1的第一导电层10换层至触控层2的第二电极层23。
在一些实施例中,显示基板1还包括平坦化层116和无机绝缘层12,平坦化层116和无机绝缘层12依次设置于第一导电层10的背离触控层2的一侧;平坦化层116由弯折区101延伸至第一非弯折区102和第二 非弯折区103;无机绝缘层12位于第一非弯折区102和第二非弯折区103。
其中,平坦化层116和无机绝缘层12都是从显示基板1的显示区延伸而出。
在一些实施例中,在弯折区101,仅保留第一导电层10和对其进行承载和保护的有机绝缘膜层,如位于第一导电层10下方的平坦化层116和位于第一导电层10上方的保护层,从而能够确保弯折区101的良好的弯折性能,避免弯折区101内的信号线在弯折过程中出现折断。在第一非弯折区102和第二非弯折区103,不仅保留第一导电层10和对其进行承载和保护的有机绝缘膜层,还保留从显示基板1显示区延伸出来的无机绝缘层12,从而确保第一非弯折区102和第二非弯折区103的膜层设置保持一致。
在一些实施例中,在弯折区101与第一非弯折区102的邻接区域以及弯折区101与第二非弯折区102的邻接区域,通过使第二电极层23、第一电极层21和绝缘层22的第一边界和第二边界在显示基板1上的正投影互不交叠且依次远离弯折区101,能在绑定区100内弯折区101和非弯折区信号线换层时,减小触控层2的第二电极层23与显示基板1的第一导电层10之间的膜层断差,从而避免触控层2的第二电极层23在较大断差处发生断裂,进而避免触控层2发生触控不良,确保了触控层2的触控品质。
在一些实施例中,第一导电层10还延伸至第一非弯折区102;第二电极层23、第一电极层21和绝缘层22的第一边界在显示基板1上的正投影落在第一导电层10上。
在一些实施例中,第一导电层10还延伸至第二非弯折区103;第二电极层23、第一电极层21和绝缘层22的第二边界在显示基板1上的正投影落在第一导电层10上。
在一些实施例中,第二电极层23的第一边界在显示基板1上的正投影与弯折区101和第一非弯折区102的接壤边界交叠;第二电极层23的第二边界在显示基板1上的正投影与弯折区101和第二非弯折区103的接壤边界交叠。即在弯折区101,未设置触控层2。
在一些实施例中,第一电极层21的第一边界在显示基板1上的正投影与第二电极层23的第一边界在显示基板1上的正投影之间间隔第一间距a;第一电极层21的第一边界在显示基板1上的正投影与绝缘层22的第一边界在显示基板1上的正投影之间间隔第二间距b;第一电极层21的第二边界在显示基板1上的正投影与第二电极层23的第二边界在显示基板1上的正投影之间间隔第一间距a;第一电极层21的第二边界在显示基板1上的正投影与绝缘层22的第二边界在显示基板1上的正投影之间间隔第二间距b;第一间距a小于或等于第二间距b。
在一些实施例中,第一间距a的尺寸范围为4~8μm;第二间距b的尺寸范围为5~10μm。
在一些实施例中,绝缘层22的厚度范围为2800~3200埃;第一电极层21的厚度范围为1800~2200埃。其中,绝缘层22的厚度为绝缘层沿远离显示基板1方向的尺寸。第一电极层21的厚度为第一电极层21沿远离显示基板1方向的尺寸。绝缘层22和第一电极层21的厚度都远小于图2-图5中无机绝缘膜层和缓冲层的叠置厚度,使绝缘层22形成的断差和第一电极层21形成的断差也都远小于图2-图5中叠置的无机绝缘膜层和缓冲层所形成的断差,从而能避免断差太大所导致的第二电极层23断裂,进而避免造成触控层2触控不良。
在一些实施例中,绝缘层22的第一边界的坡度角θ1范围为80~90°;绝缘层22的第二边界的坡度角θ2范围为80~90°;第一电极层21的第一边界的坡度角α1范围为30~60°;第一电极层21的第二边界的坡度角α2范围为30~60°。由于绝缘层22的第一边界和第一电极 层21的第一边界相互错开,绝缘层22的第二边界和第一电极层21的第二边界相互错开,所以其各自第一边界的坡度角所形成的断差以及其各自第二边界的坡度角所形成的断差都小于图2-图5中叠置的无机绝缘膜层和缓冲层边界的坡度角所形成的断差,从而能避免断差较大所导致的第二电极层23断裂,进而避免造成触控层2触控不良。
在一些实施例中,显示基板1还包括缓冲层13,缓冲层13位于第一非弯折区102,且缓冲层13设置于第一电极层21和第一导电层10之间;缓冲层13的第一边界位于弯折区101与第一非弯折区102的邻接区域,且缓冲层13的第一边界在第一导电层10上的正投影与第一电极层21的第一边界在第一导电层10上的正投影交叠。第一电极层21为金属导电层,平坦化层116为有机绝缘层。缓冲层13的设置,能够增强第一电极层21在平坦化层116上的附着能力。
在一些实施例中,缓冲层13还位于第二非弯折区103;缓冲层13的第二边界位于弯折区101与第二非弯折区103的邻接区域,且缓冲层13的第二边界在第一导电层10上的正投影与第一电极层21的第二边界在第一导电层10上的正投影交叠。
在一些实施例中,缓冲层13的厚度范围为800~1000埃。缓冲层13的厚度为缓冲层13沿远离显示基板1方向的尺寸。缓冲层13的厚度较小,使缓冲层13的与第一电极层21交叠的第一边界和第二边界不会在换层位置处形成较大的断差,从而能避免断差较大所导致的第二电极层23断裂,进而避免造成触控层2触控不良。
在一些实施例中,参照图11,缓冲层13的第一边界在第一导电层10上的正投影也可以位于第二电极层23的第一边界在第一导电层10上的正投影和第一电极层21的第一边界在第一导电层10上的正投影之间。即缓冲层13的第一边界与第二电极层23的第一边界、第一电极层21的第一边界相互错开。如此设置,能进一步使缓冲层13的第一边界不会 在换层位置处形成较大的断差,从而能避免断差较大所导致的第二电极层23断裂,进而避免造成触控层2触控不良。
在一些实施例中,缓冲层13的第二边界在第一导电层10上的正投影位于第二电极层23的第二边界在第一导电层10上的正投影和第一电极层21的第二边界在第一导电层10上的正投影之间。即缓冲层13的第二边界与第二电极层23的第二边界、第一电极层21的第二边界相互错开。如此设置,能进一步使缓冲层13的第二边界不会在换层位置处形成较大的断差,从而能避免断差较大所导致的第二电极层23断裂,进而避免造成触控层2触控不良。
在一些实施例中,绝缘层22还包括第三边界s1;第一导电层10包括第一边界z1,第一导电层10的第一边界z1位于第一非弯折区102;绝缘层22的第三边界s1在显示基板1上的正投影位于第一导电层10的第一边界z1的远离弯折区101的一侧。
在一些实施例中,绝缘层22还包括第四边界s2;第一导电层10还包括第二边界z2,第一导电层10的第二边界z2位于第二非弯折区103;绝缘层22的第四边界s2在显示基板1上的正投影位于第一导电层10的第二边界z2的远离弯折区101的一侧。
在一些实施例中,绑定区100内弯折区101、第一非弯折区102和第二非弯折区103以外的区域,第一电极层21和第二电极层23相互叠置,二者之间未设置绝缘层22,如此能够增大触控电极层的截面积,从而降低触控电极层的走线电阻。
在一些实施例中,参照图12,显示基板1还包括显示区104,在显示区104,显示基板1包括基底、设置于基底上的驱动电路层、设置于驱动电路层上的显示器件以及对显示器件进行封装的封装层。其中,基底可采用单层玻璃基底,也可以包括多个依次层叠设置的聚酰亚胺层140和无机材料层141;无机材料层141可为氮化硅、氧化硅等材料制 作而成,以达到阻水氧和阻隔碱性离子的效果;需要说明的是,该基底的结构不限于此,可根据实际需求而定。驱动电路层可包括薄膜晶体管和电容结构。薄膜晶体管可为顶栅型,薄膜晶体管可包括有源层109、第一栅绝缘层105、栅极106、第二栅绝缘层108、层间介质层142、源极110、漏极111。具体地,有源层109可形成在基底上,第一栅绝缘层105覆盖有源层109,栅极106形成在第一栅绝缘层105背离有源层109的一侧,第二栅绝缘层108覆盖栅极106和第一栅绝缘层105,层间介质层142覆盖第二栅绝缘层108,源极110和漏极111形成在层间介质层142背离基底的一侧并分别位于栅极106的相对两侧,该源极110和漏极111可分别通过过孔(例如:金属过孔)与有源层109的相对两侧接触。应当理解的是,此薄膜晶体管也可为底栅型。
在一些实施例中,电容结构可包括第一极板130和第二极板131,此第一极板130与栅极106同层设置,第二极板131位于第二栅绝缘层108与层间介质层142之间,并与第一极板130相对设置。
在一些实施例中,栅极106和第一极板130、第二极板131的材料可以包括金属材料或者合金材料,例如包括钼、铝及钛等。源极110和漏极111可以包括金属材料或者合金材料,例如由钼、铝及钛等形成的金属单层或多层结构,例如,该多层结构为多金属层叠层,例如钛、铝、钛三层金属叠层(Al/Ti/Al)等。
在一些实施例中,显示器件可包括依次形成在层间介质层142上的第一电极112和像素界定部113,应当理解的是,该显示器件还可包括发光部114和第二电极115。层间介质层142与第一电极112之间形成有平坦化层116。其中,第一电极112可通过金属过孔与漏极111电性连接,该第一电极112可为阳极,此阳极可为ITO(氧化铟锡)、氧化铟锌(IZO)、氧化锌(ZnO)等材料制作而成;像素界定部113可覆盖平坦化层116,此像素界定部113可为有机材料制作而成,例如:光刻 胶等有机材料,且像素界定部113中具有露出第一电极112的像素开口;发光部114位于像素开口内并形成在第一电极112上,该发光部114可包括小分子有机材料或聚合物分子有机材料,可以为荧光发光材料或磷光发光材料,可以发红光、绿光、蓝光,或可以发白光等;并且,根据实际不同需要,在不同的示例中,发光部114还可以进一步包括电子注入层、电子传输层、空穴注入层、空穴传输层等功能层;第二电极115覆盖发光部114,且该第二电极115的极性与第一电极112的极性相反;此第二电极115可为阴极,此阴极可为锂(Li)、铝(Al)、镁(Mg)、银(Ag)等金属材料制作而成。
需要说明的是,第一电极112、发光部114和第二电极115可构成一个发光子像素1d。其中,此显示器件中位于显示区104的部分可包括多个阵列排布的发光子像素1d。此外,还需说明的是,各发光子像素1d的第一电极112相互独立,各发光子像素1d的第二电极115整面连接。
在一些实施例中,像素界定部113背离层间介质层142的一侧还可设置支撑部132,该支撑部132可起到支撑保护膜层(图中未示出)的作用,以避免保护膜层与第一电极112或其他走线接触而导致第一电极112或其他走线容易损坏的情况。需要说明的是,此保护膜层主要出现在半成品转移的过程中,以避免转移过程中半成品出现损坏的情况,具体地:在将制作完支撑部132的基板转移到蒸镀产线的过程中,可覆盖一层保护膜层,当需要进行发光材料的蒸镀时,而将保护膜层移除。
在一些实施例中,支撑部132的材料可与像素界定部113的材料相同,且支撑部132与像素界定部113可采用同一次构图工艺形成,但不限于此,支撑部132的材料也可与像素界定部113的材料不同,且支撑部132与像素界定部113也可采用不同构图工艺形成。
在一些实施例中,参照图12,第一电极112还可通过转接电极133与漏极111电性连接。该平坦化层116为双层结构,具体可包括依次形 成的第一平坦化膜(PLN1)层116a及第二平坦化膜(PLN2)层116b,此外,在第一平坦化膜层116a与层间介质层142之间还可形成钝化膜(PVX)层134,该钝化膜层134可由氧化硅、氮化硅或者氮氧化硅等材料形成;该钝化膜层134覆盖源极110、漏极111;而转接电极133形成在第一平坦化膜层116a与第二平坦化膜层116b之间,并依次通过第一平坦化膜层116a及钝化膜层134上的过孔(例如金属过孔)与漏极111电性连接;而第一电极112可通过第二平坦化膜层116b上的过孔(例如金属过孔)与转接电极133电性连接。
在一些实施例中,封装层118用于对显示区104内的显示器件进行封装,即绑定区100未设置封装层。封装层118包括依次层叠设置的第一无机封装薄膜层118a、有机封装薄膜层118b和第二无机封装薄膜层118c。第一无机封装薄膜层118a、第二无机封装薄膜层118c用于防止水、氧进入到显示区104的发光部114中;该第一无机封装薄膜层118a和第二无机封装薄膜层118c可采用氮化硅、氧化硅等无机材料制作而成。有机封装薄膜层118b用于实现平坦化作用,以便于第二无机封装薄膜层118c层的制作,此有机封装薄膜层118b可采用丙烯酸基聚合物、硅基聚合物等材料制作而成。
其中,此第一无机封装薄膜层118a和第二无机封装薄膜层118c可采用化学气相沉积工艺制作而成,但不限于此,也可采用物理气相沉积工艺等;而有机封装薄膜层118b采用喷墨打印工艺制作,但不限于此,也可采用喷涂工艺等。
在一些实施例中,弯折区101的第一导电层10与转接电极133同材料且同层设置,弯折区101内去除了像素界定部、支撑部和第二平坦化膜层,保留第一平坦化膜层116a。在第一非弯折区102和第二非弯折区103,不仅保留第一导电层10和对其进行承载和保护的有机绝缘膜层,如平坦化层116,还保留从显示基板1显示区延伸出来的无机绝缘层12, 如层间介质层142、钝化膜层134、第一栅绝缘层105、第二栅绝缘层108。
在一些实施例中,参照图13和图14,在显示区104内,触控层2设置于封装层118背离显示器件的一侧,触控层2的第二电极层23包括多个驱动电极条231和多个感应电极232,第一电极层21包括多个桥接部210,多个感应电极232排布呈阵列,沿阵列列方向排布的任意相邻感应电极232之间通过桥接部210连接形成感应电极条233;各驱动电极条231的长度方向沿阵列的行方向,多个驱动电极条231沿阵列的列方向依次排布;驱动电极条231和感应电极条233在各桥接部210位置空间交叉,绝缘层22设置于各个桥接部210与驱动电极条231之间。
在一些实施例中,显示区104内,触控层2在显示基板1上的正投影位于发光部114之间的像素界定部113所在区域。第二电极层23和第一电极层21均为网格状电极。在一些实施例中,第二电极层23和第一电极层21分别金属叠层结构,如二者均为钛铝钛叠层结构。由于触控层2在显示基板1上的正投影位于像素界定部113所在区域,所以触控层2的设置不会影响显示基板1的透光率。
在一些实施例中,触控层2中第一电极层21、绝缘层22和第二电极层23的图形可以采用构图工艺(包括成膜、曝光、显影、刻蚀等步骤)依次制备于封装层118上,如此不仅能够减小显示面板的整体厚度,从而有利于柔性显示面板的折叠,而且相对于将触控面板外挂于显示面板上,还能够避免触控面板的贴合公差,从而有利于减小显示面板的边框宽度。
基于显示面板的上述结构,该显示面板中的触控层在制备时,分别调整制备第一电极层,绝缘层和第二电极层的掩膜板图形,使第二电极层、第一电极层和绝缘层的第一边界和第二边界在显示基板上的正投影互不交叠且依次远离弯折区。
本公开实施例中所提供的显示面板,通过在弯折区与第一非弯折区 的邻接区域以及弯折区与第二非弯折区的邻接区域,使第二电极层、第一电极层和绝缘层的第一边界和第二边界在显示基板上的正投影互不交叠且依次远离弯折区,能在绑定区内弯折区和非弯折区信号线换层时,减小触控层的第二电极层与显示基板的第一导电层之间的膜层断差,从而避免触控层的第二电极层在较大断差处发生断裂,进而避免触控层发生触控不良,确保了触控层的触控品质。
本公开实施例还提供一种显示装置,包括上述实施例中的显示面板。
通过采用上述实施例中的显示面板,在确保该显示装置显示品质的情况下,确保了该显示装置的触控品质。
该显示装置可以为:OLED面板、OLED电视、手机、平板电脑、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是,以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式,然而本公开并不局限于此。对于本领域内的普通技术人员而言,在不脱离本公开的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本公开的保护范围。
Claims (18)
- 一种显示面板,包括:显示基板;触控层;位于所述显示基板的至少一侧;所述显示基板包括显示区和位于所述显示区至少一侧的绑定区,所述绑定区包括弯折区和第一非弯折区,所述弯折区与所述第一非弯折区邻接;所述显示基板还包括第一导电层;所述第一导电层至少位于所述弯折区;所述触控层位于所述第一非弯折区;所述触控层的第一边界位于所述弯折区与所述第一非弯折区的邻接区域;所述触控层包括依次远离所述第一导电层设置的第一电极层、绝缘层和第二电极层;所述第二电极层与所述第一导电层的边缘搭接,其中,所述第二电极层、所述第一电极层和所述绝缘层的第一边界在所述显示基板上的正投影互不交叠且依次远离所述弯折区。
- 根据权利要求1所述的显示面板,其中,所述绑定区还包括第二非弯折区,所述第二非弯折区位于所述弯折区的远离所述第一非弯折区的一侧,且所述第二非弯折区与所述弯折区邻接;所述触控层还位于所述第二非弯折区;所述触控层的第二边界位于所述弯折区与所述第二非弯折区的邻接区域;所述第二电极层、所述第一电极层和所述绝缘层的第二边界在所述显示基板上的正投影互不交叠且依次远离所述弯折区。
- 根据权利要求2所述的显示面板,其中,所述第一导电层还延伸至所述第一非弯折区;所述第二电极层、所述第一电极层和所述绝缘层的第一边界在所述显示基板上的正投影落在所述第一导电层上。
- 根据权利要求3所述的显示面板,其中,所述第一导电层还延伸至所述第二非弯折区;所述第二电极层、所述第一电极层和所述绝缘层的第二边界在所述显示基板上的正投影落在所述第一导电层上。
- 根据权利要求4所述的显示面板,其中,所述第二电极层的第一边界在所述显示基板上的正投影与所述弯折区和所述第一非弯折区的接壤边界交叠;所述第二电极层的第二边界在所述显示基板上的正投影与所述弯折区和所述第二非弯折区的接壤边界交叠。
- 根据权利要求5所述的显示面板,其中,所述第一电极层的第一边界在所述显示基板上的正投影与所述第二电极层的第一边界在所述显示基板上的正投影之间间隔第一间距;所述第一电极层的第一边界在所述显示基板上的正投影与所述绝缘层的第一边界在所述显示基板上的正投影之间间隔第二间距;所述第一电极层的第二边界在所述显示基板上的正投影与所述第二电极层的第二边界在所述显示基板上的正投影之间间隔所述第一间距;所述第一电极层的第二边界在所述显示基板上的正投影与所述绝缘层的第二边界在所述显示基板上的正投影之间间隔所述第二间距;所述第一间距小于或等于所述第二间距。
- 根据权利要求6所述的显示面板,其中,所述第一间距的尺寸范 围为4~8μm;所述第二间距的尺寸范围为5~10μm。
- 根据权利要求7所述的显示面板,其中,所述绝缘层的厚度范围为2800~3200埃;所述第一电极层的厚度范围为1800~2200埃。
- 根据权利要求8所述的显示面板,其中,所述绝缘层的第一边界的坡度角范围为80~90°;所述绝缘层的第二边界的坡度角范围为80~90°;所述第一电极层的第一边界的坡度角范围为30~60°;所述第一电极层的第二边界的坡度角范围为30~60°。
- 根据权利要求4所述的显示面板,其中,所述显示基板还包括缓冲层,所述缓冲层位于所述第一非弯折区,且所述缓冲层设置于所述第一电极层和所述第一导电层之间;所述缓冲层的第一边界位于所述弯折区与所述第一非弯折区的邻接区域,且所述缓冲层的第一边界在所述第一导电层上的正投影与所述第一电极层的第一边界在所述第一导电层上的正投影交叠。
- 根据权利要求4所述的显示面板,其中,所述显示基板还包括缓冲层,所述缓冲层位于所述第一非弯折区,且所述缓冲层设置于所述第一电极层和所述第一导电层之间;所述缓冲层的第一边界位于所述弯折区与所述第一非弯折区的邻接区域,且所述缓冲层的第一边界在所述第一导电层上的正投影位于所述第二电极层的第一边界在所述第一导电层上的正投影和所述第一电极层的第一边界在所述第一导电层上的正投影之间。
- 根据权利要求10或11所述的显示面板,其中,所述缓冲层还位于所述第二非弯折区;所述缓冲层的第二边界位于所述弯折区与所述第二非弯折区的邻接区域,且所述缓冲层的第二边界在所述第一导电层上的正投影与所述第一电极层的第二边界在所述第一导电层上的正投影交叠。
- 根据权利要求10或11所述的显示面板,其中,所述缓冲层还位于所述第二非弯折区;所述缓冲层的第二边界位于所述弯折区与所述第二非弯折区的邻接区域,且所述缓冲层的第二边界在所述第一导电层上的正投影位于所述第二电极层的第二边界在所述第一导电层上的正投影和所述第一电极层的第二边界在所述第一导电层上的正投影之间。
- 根据权利要求10或11所述的显示面板,其中,所述缓冲层的厚度范围为800~1000埃。
- 根据权利要求2所述的显示面板,其中,所述绝缘层还包括第三边界;所述第一导电层包括第一边界,所述第一导电层的第一边界位于所述第一非弯折区;所述绝缘层的第三边界在所述显示基板上的正投影位于所述第一导电层的第一边界的远离所述弯折区的一侧。
- 根据权利要求15所述的显示面板,其中,所述绝缘层还包括第四边界;所述第一导电层还包括第二边界,所述第一导电层的第二边界位于所述第二非弯折区;所述绝缘层的第四边界在所述显示基板上的正投影位于所述第一导电层的第二边界的远离所述弯折区的一侧。
- 根据权利要求16所述的显示面板,其中,所述显示基板还包括平坦层和无机绝缘层,所述平坦层和所述无机绝缘层依次设置于所述第一导电层的背离所述触控层的一侧;所述平坦层由所述弯折区延伸至所述第一非弯折区和所述第二非弯折区;所述无机绝缘层位于所述第一非弯折区和所述第二非弯折区。
- 一种显示装置,其中,包括权利要求1-17任意一项所述的显示面板。
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Publication number | Priority date | Publication date | Assignee | Title |
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CN106449712A (zh) * | 2016-11-07 | 2017-02-22 | 上海天马微电子有限公司 | 一种有机发光显示面板以及有机发光显示装置 |
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CN212515770U (zh) * | 2020-09-08 | 2021-02-09 | 京东方科技集团股份有限公司 | 触控结构、触控显示基板和触控显示装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001343908A (ja) * | 2000-05-31 | 2001-12-14 | Nitto Denko Corp | タッチ式el表示装置及び入力検出方法 |
CN106449712A (zh) * | 2016-11-07 | 2017-02-22 | 上海天马微电子有限公司 | 一种有机发光显示面板以及有机发光显示装置 |
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