WO2022158286A1 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
- Publication number
- WO2022158286A1 WO2022158286A1 PCT/JP2022/000105 JP2022000105W WO2022158286A1 WO 2022158286 A1 WO2022158286 A1 WO 2022158286A1 JP 2022000105 W JP2022000105 W JP 2022000105W WO 2022158286 A1 WO2022158286 A1 WO 2022158286A1
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- Prior art keywords
- substrate
- cleaning
- processing apparatus
- cleaning jig
- substrate processing
- Prior art date
Links
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Definitions
- the present disclosure relates to a substrate processing apparatus and a substrate processing method.
- Patent Document 1 discloses a substrate processing apparatus having a lid that covers the upper side of the substrate.
- the present disclosure provides a technique for efficiently cleaning the lid.
- a substrate processing apparatus includes a substrate holding section, a rotation driving section, a lid, a transport mechanism, a cleaning liquid supply section, and a control section.
- the substrate holding part holds the substrate.
- the rotation drive section rotates the substrate holder.
- the lid covers the upper surface of the substrate held by the substrate holder.
- the transport mechanism transports the cleaning jig to the substrate holder.
- the cleaning liquid supply section supplies the cleaning liquid toward the lower surface of the cleaning jig held by the substrate holding section.
- the control unit rotates the substrate holder by controlling the rotation drive unit.
- the cleaning jig is formed with at least one hole through which the cleaning liquid discharged from the cleaning liquid supply section is passed toward the lid.
- the lid can be washed efficiently.
- FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.
- FIG. 2 is a schematic diagram illustrating the configuration of a processing unit according to the embodiment;
- FIG. 3 is a plan view showing the configuration of the cleaning jig according to the embodiment.
- FIG. 4 is a cross-sectional view along IV-IV in FIG. 3 of the cleaning jig according to the embodiment.
- FIG. 5 is a cross-sectional view of the cleaning jig according to the embodiment taken along the line VV in FIG. 6 is a cross-sectional view of the cleaning jig according to the embodiment, taken along line VI-VI of FIG. 3.
- FIG. FIG. 7 is a flowchart for explaining plating processing according to the embodiment.
- FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.
- FIG. 2 is a schematic diagram illustrating the configuration of a processing unit according to the embodiment;
- FIG. 3 is a plan view showing the configuration
- FIG. 8 is a flowchart for explaining heating unit cleaning processing according to the embodiment.
- FIG. 9 is a plan view showing the configuration of a cleaning jig according to a modification of the embodiment.
- FIG. 10 is a diagram showing a cross section of a blade portion in a cleaning jig according to a modified example of the embodiment;
- FIG. 11 is a diagram showing a cross section of a first wall portion of a cleaning jig according to a modification of the embodiment;
- FIG. 12 is a diagram showing a cross section of a second wall portion of a cleaning jig according to a modification of the embodiment;
- FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment.
- the X-axis, Y-axis and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertically upward direction.
- the X-axis direction be a left-right direction.
- the substrate processing apparatus 1 includes a loading/unloading station 2 and a processing station 3 .
- the loading/unloading station 2 and the processing station 3 are provided adjacently.
- the loading/unloading station 2 includes a carrier placement section 11 and a transport section 12 .
- a plurality of carriers C for accommodating a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state are mounted on the carrier mounting portion 11 .
- the transport section 12 is provided adjacent to the carrier mounting section 11 and includes a substrate transport device 13 and a transfer section 14 therein.
- the substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can rotate about the vertical axis. conduct.
- the processing station 3 is provided adjacent to the transport section 12 .
- the processing station 3 comprises a transport section 15 and a plurality of processing units 16 .
- a plurality of processing units 16 are arranged side by side on both sides of the transport section 15 in the Y-axis direction.
- the transport unit 15 includes a substrate transport device 17 inside.
- the substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. In addition, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can rotate about the vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using a wafer holding mechanism. I do.
- the substrate transfer device 17 includes an arm that holds the wafer W, a motor that moves the arm, a sensor that detects the position of the arm, and the like.
- the substrate transfer device 17 can transfer a cleaning jig 40, which will be described later.
- the substrate transfer device 17 (an example of a transfer mechanism) transfers the wafer W or the cleaning jig 40 to the substrate holder 21, which will be described later.
- the processing unit 16 performs predetermined wafer processing on the wafer W transferred by the substrate transfer device 17 . Specifically, the processing unit 16 performs a plating process on the wafer W. FIG. The processing unit 16 performs a predetermined heating part cleaning process using a cleaning jig 40 transported by the substrate transport device 17 .
- the substrate processing apparatus 1 also includes a control device 4 .
- Control device 4 is, for example, a computer, and includes control unit 18 and storage unit 19 .
- the storage unit 19 stores programs for controlling various processes executed in the substrate processing apparatus 1 .
- the control unit 18 controls the operation of the substrate processing apparatus 1 by reading and executing programs stored in the storage unit 19 . For example, the control unit 18 rotates the substrate holding unit 21 by controlling the rotation driving unit 22, which will be described later.
- the program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium.
- Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards.
- the substrate transfer device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier platform 11, and receives the taken out wafer W. It is placed on the transfer section 14 .
- the wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .
- the wafer W loaded into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transport device 17, and placed on the delivery section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C on the carrier placement section 11 by the substrate transfer device 13 .
- the substrate processing apparatus 1 loads the cleaning jig 40 into the processing unit 16 to clean the heating portion of the processing unit 16 . process.
- the substrate processing apparatus 1 unloads the cleaning jig 40 from the processing unit 16 after completing the heating unit cleaning process.
- the cleaning jig 40 is mounted, for example, on a mounting section 14 a provided above or below the delivery section 14 when the heating section cleaning process is not performed.
- FIG. 2 is a diagram showing the configuration of the processing unit 16 according to the embodiment.
- the processing unit 16 is a unit for plating the wafer W. As shown in FIG. Specifically, the processing unit 16 is a unit that performs an electroless plating process on the wafer W. As shown in FIG.
- the processing unit 16 includes a chamber 20 , a substrate holding section 21 , a rotation driving section 22 , a plating liquid supply section 23 , a first cleaning liquid supply section 24 , a rinse liquid supply section 25 and a second cleaning liquid supply section 26 . , a heating unit 27 and a collection cup 28 .
- the chamber 20 accommodates the substrate holding part 21, the heating part 27, the collection cup 28, and the like.
- the ceiling of the chamber 20 is provided with an FFU (Fan Filter Unit) 20a.
- the FFU 20a forms a downflow within the chamber 20.
- the substrate holding part 21 holds a wafer W (an example of a substrate). Specifically, the substrate holding unit 21 supports the lower surface of the wafer W loaded by the substrate transfer device 17 (see FIG. 1) and holds the wafer W horizontally.
- the substrate holding part 21 is of a vacuum chuck type that vacuum-sucks the lower surface of the wafer W. As shown in FIG. The substrate holding part 21 sucks the wafer W near its center. The substrate holding part 21 holds the cleaning jig 40 as well as the wafer W. As shown in FIG.
- the substrate holding part 21 is attached to the rotation drive part 22 via a rotation shaft 21a.
- the rotary drive unit 22 is, for example, a motor.
- the rotation driving portion 22 is driven, and the rotation generated by the rotation driving portion 22 is transmitted to the substrate holding portion 21 via the rotating shaft 21a, thereby rotating the substrate holding portion 21.
- the rotation driving section 22 rotates the substrate holding section 21 .
- the wafer W rotates together with the substrate holding part 21 because the substrate holding part 21 rotates while holding the wafer W.
- the substrate holding part 21 rotates while holding the cleaning jig 40 , so that the cleaning jig 40 rotates together with the substrate holding part 21 .
- the rotation speed of the substrate holding unit 21 that is, the rotation speed of the wafer W and the rotation speed of the cleaning jig 40 are adjusted by the rotation driving unit 22 .
- a rotating coordinate system centered on the rotation axis of the substrate holder 21 may be used.
- the radial direction about the rotation axis of the substrate holding part 21 may be defined and described.
- the substrate holding part 21 can be vertically moved by a moving mechanism (not shown) such as a motor or a cylinder. Specifically, the substrate holding part 21 moves vertically between the transfer position and the processing position.
- the transfer position is a position above the recovery cup 28 and a position where the wafer W or the cleaning jig 40 is transferred between the substrate transfer device 17 and the substrate holder 21 .
- the processing position is below the transfer position, and is a position where the wafer W held by the substrate holding part 21 is subjected to a plating process or the like. Further, the processing position is a position where the cleaning jig 40 for cleaning is used to perform the cleaning processing of the heating portion. Note that the position where the wafer W is plated or the like and the position where the heating part cleaning process is performed using the cleaning jig 40 may be different positions.
- the plating solution supply unit 23 supplies plating solution (an example of a processing solution) to the upper surface of the wafer W held by the substrate holding unit 21 .
- the plating solution supply unit 23 includes a plating solution supply nozzle 23a and a plating solution supply source 23b.
- the plating solution supply nozzle 23 a is held by the nozzle arm 30 .
- the nozzle arm 30 is movable in the horizontal direction (X-axis direction) and the vertical direction (Z-axis direction).
- the nozzle arm 30 is moved in the horizontal and vertical directions by a moving mechanism (not shown) such as a motor and a cylinder.
- the nozzle arm 30 moves in the left-right direction between the first retracted position and the first raised position.
- the first retracted position is a position where the nozzle arm 30 is radially outward of the collection cup 28, and is a position where the vertical movement of the heating unit 27 is not hindered.
- the first elevated position is a position above the wafer W held by the substrate holding part 21, and is a position moved along the X-axis direction from the first retracted position.
- the nozzle arm 30 moves vertically between the first raised position and the first lowered position.
- the first lowered position is below the first raised position and above the wafer W held by the substrate holder 21 .
- the plating solution supply nozzle 23a is connected to a plating solution supply source 23b via a plating solution supply line 23c.
- the plating solution supply nozzle 23a is supplied with the plating solution heated to a predetermined temperature from the plating solution supply source 23b, and discharges the plating solution onto the wafer W. As shown in FIG. As a result, the upper surface of the wafer W is covered with the plating solution.
- the plating solution is a plating solution for electroless plating.
- the plating solution contains, for example, metal ions such as cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, and gold (Au) ions; It contains an acid and a reducing agent such as dimethylamine borane.
- the plating solution may contain additives and the like. Examples of plating films formed by plating using a plating solution include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, and NiWBP.
- the first cleaning liquid supply unit 24 includes a first cleaning liquid supply nozzle 24a and a first cleaning liquid supply source 24b.
- the first cleaning liquid supply nozzle 24 a is held by the nozzle arm 30 .
- the first cleaning liquid supply nozzle 24a is connected to the first cleaning liquid supply source 24b via a first cleaning liquid supply line 24c.
- the first cleaning liquid supply nozzle 24 a is supplied with the first cleaning liquid from the first cleaning liquid supply source 24 b and ejects the first cleaning liquid onto the upper surface of the wafer W.
- the first cleaning liquid is, for example, an organic acid such as formic acid, malic acid, succinic acid, or citric acid, or hydrogen fluoride (DHF) diluted to a concentration that does not corrode the surface of the wafer W to be plated.
- the rinse liquid supply unit 25 includes a rinse liquid supply nozzle 25a and a rinse liquid supply source 25b.
- the rinse liquid supply nozzle 25 a is held by the nozzle arm 30 .
- the rinse liquid supply nozzle 25a is connected to the rinse liquid supply source 25b via a rinse liquid supply line 25c.
- the rinse liquid supply nozzle 25 a is supplied with the rinse liquid from the rinse liquid supply source 25 b and ejects the rinse liquid onto the wafer W.
- the rinse liquid is pure water, for example.
- the second cleaning liquid supply unit 26 supplies the second cleaning liquid (an example of the cleaning liquid) toward the lower surface of the wafer W (an example of the substrate) held by the substrate holding section 21 .
- the second cleaning liquid supply section 26 (an example of the cleaning liquid supply section) supplies the second cleaning liquid (an example of the cleaning liquid) toward the lower surface of the cleaning jig 40 held by the substrate holding section 21 .
- the second cleaning liquid is, for example, a rinse liquid and pure water. In the following description, the second cleaning liquid is assumed to be the rinse liquid.
- the second cleaning liquid supply unit 26 includes a second cleaning liquid supply nozzle 26a and a second cleaning liquid supply source 26b.
- the second cleaning liquid supply nozzle 26a is held by a nozzle holder (not shown).
- the second cleaning liquid supply nozzle 26a is connected to a second cleaning liquid supply source 26b via a second cleaning liquid supply line 26c.
- the second cleaning liquid supply nozzle 26 a is supplied with the rinse liquid from the second cleaning liquid supply source 26 b and discharges the second cleaning liquid onto the lower surface of the wafer W or the lower surface of the cleaning jig 40 .
- the second cleaning liquid supply nozzle 26a is provided so as to discharge the rinse liquid from the radially inner side toward the radially outer side and obliquely upward.
- the second cleaning liquid supply nozzle 26a may be supplied with the rinse liquid from the rinse liquid supply source 25b.
- the heating part 27 is plate-shaped and formed in a circular shape.
- the heating unit 27 includes a heater 27a inside.
- the heating unit 27 (an example of a lid) heats the wafer W (an example of a substrate) held by the substrate holding unit 21 or the upper surface of the cleaning jig 40 held by the substrate holding unit 21 at a heating position described later. provided to cover.
- the heating unit 27 heats the wafer W supplied with the plating solution from the upper surface side.
- the heating unit 27 heats the plating solution filled on the wafer W to form a plating film on the upper surface of the wafer W.
- the diameter of the heating part 27 is larger than the diameter of the wafer W.
- the diameter of the heating portion 27 is smaller than the opening diameter of the collection cup 28 . Note that the heating portion 27 may have an annular shape.
- the heating section 27 is attached to the support section 32 via the arm 31 .
- the arm 31 is rotatable about the support portion 32 by a movement mechanism (not shown) such as a motor and a cylinder, and is also movable in the vertical direction.
- the heating unit 27 rotates together with the arm 31 .
- the heating portion 27 rotates between the second retracted position and the second raised position.
- the second retracted position is a position radially outside the recovery cup 28, and is a position where the wafer W can be transferred between the substrate transfer device 17 (see FIG. 1) and the substrate holder 21.
- the second elevated position is a position where the upper side of the wafer W is covered, and for example, a position where the heating section 27 is substantially coaxial with the substrate holding section 21 .
- the heating portion 27 and the arm 31 at the second raised position are indicated by solid lines.
- the heating unit 27 moves vertically between the second upper position and the heating position.
- the heating position is lower than the second upper position and is a position that does not come into contact with the plating solution heaped up on the wafer W. As shown in FIG.
- the heating position is a position where the wafer W filled with the plating solution is heated.
- the heating portion 27 in the heating position and the arm 31 are indicated by dashed lines.
- the recovery cup 28 is provided radially outside the substrate holding portion 21 and around the substrate holding portion 21 .
- the collection cup 28 receives the liquid scattered from the wafer W, such as the plating liquid.
- the collection cup 28 receives the rinse liquid scattered from the cleaning jig 40 .
- the liquid recovered by the recovery cup 28 is discharged to the outside through the drain line 28a.
- the drain line 28a has a plurality of paths, and the paths are switched according to the liquid to be recovered.
- the recovery cup 28 is open at the top so that the substrate holding part 21 holding the wafer W or the cleaning jig 40 and the heating part 27 can move in the vertical direction.
- FIG. 3 is a plan view showing the configuration of the cleaning jig 40 according to the embodiment.
- FIG. 4 is a cross-sectional view along IV-IV in FIG. 3 of the cleaning jig 40 according to the embodiment.
- FIG. 5 is a cross-sectional view along IV-IV in FIG. 3 of the cleaning jig 40 according to the embodiment.
- FIG. 6 is a cross-sectional view taken along IV-IV in FIG. 3 of the cleaning jig 40 according to the embodiment.
- the cleaning jig 40 includes a plate portion 41, at least one wall portion 42, and at least one blade portion 43.
- the plate portion 41 has the same outer shape as the wafer W, for example, circular.
- the diameter of the plate portion 41 is equal to the diameter of the wafer W.
- At least one hole 44 is formed in the plate portion 41 held by the substrate holding portion 21 .
- the hole 44 is provided so as to pass the rinse liquid (an example of the cleaning liquid) discharged from the second cleaning liquid supply section 26 (an example of the cleaning liquid supply section) toward the heating section 27 (an example of the lid).
- the hole 44 is formed circular, for example.
- a plurality of holes 44 are formed in the plate portion 41 .
- four holes 44 are formed in the plate portion 41 .
- the four holes 44 are formed, for example, at regular intervals in the circumferential direction of the plate portion 41 . That is, the four holes 44 are formed at intervals of 90 degrees in the circumferential direction of the plate portion 41 .
- the number of holes 44 is not limited to this, and may be one, two, or three. The number of holes 44 may be five or more.
- the wall portion 42 is formed so that the rinse liquid (an example of the cleaning liquid) discharged from the second cleaning liquid supply section 26 and passed through the holes 44 collides therewith.
- the wall portion 42 is formed to extend from the plate portion 41 radially outside the hole 44 toward the heating portion 27 (an example of the lid).
- the wall portion 42 is formed perpendicular to the plate portion 41 .
- a plurality of wall portions 42 are provided. Two walls 42 are provided, for example.
- the wall portion 42 is provided near the hole 44 facing the center of the plate portion 41 .
- the number of wall portions 42 is not limited to this, and may be one or three or more.
- first hole 44 a the hole 44 in which the wall portion 42 is formed in the vicinity of the hole 44
- second hole 44b A hole 44 that is not formed
- the blade portion 43 generates a swirling flow above the cleaning jig 40 by rotating the cleaning jig 40 within the chamber 20 .
- the blade portion 43 is formed to extend from the plate portion 41 toward the heating portion 27 (an example of the lid).
- the blade portion 43 is provided so as to extend along the radial direction of the plate portion 41 .
- the blade portion 43 is formed to extend obliquely upward from the plate portion 41 between the two holes 44 .
- the blade portion 43 has an inclined surface 45 that is inclined with respect to the plate portion 41 .
- the inclined surface 45 is formed on the surface on the upstream side in the rotation direction of the cleaning jig 40 .
- a plurality of blade portions 43 are provided.
- four blade portions 43 are provided. Note that the number of blade portions 43 is not limited to this, and may be one, two, or three. The number of blade portions 43 may be five or more.
- FIG. 7 is a flowchart for explaining plating processing according to the embodiment.
- the substrate processing apparatus 1 performs loading processing (S10). Specifically, the substrate processing apparatus 1 loads the wafer W into the chamber 20 by the substrate transfer device 17 and holds the wafer W by the substrate holding part 21 . The substrate holding part 21 attracts the lower surface of the wafer W and keeps the wafer W horizontal.
- the substrate processing apparatus 1 performs cleaning processing (S11). Specifically, the substrate processing apparatus 1 cleans the wafer W by discharging the cleaning liquid from the first cleaning liquid supply nozzle 24a while rotating the wafer W by rotating the substrate holder 21 . Note that the rotation speed of the wafer W in the cleaning process and each process described below is adjusted for each process. The rotation speed of wafer W in each process may be changed during the process.
- the substrate processing apparatus 1 performs a first rinse process (S12). Specifically, the substrate processing apparatus 1 discharges the rinse liquid from the rinse liquid supply nozzle 25a while rotating the wafer W to wash away the cleaning liquid remaining on the wafer W. FIG. Further, the substrate processing apparatus 1 cleans the lower surface of the wafer W by ejecting the rinse liquid from the second cleaning liquid supply nozzle 26a.
- the substrate processing apparatus 1 performs plating (S13). Specifically, the substrate processing apparatus 1 rotates the wafer W and supplies the plating solution from the plating solution supply nozzle 23a. As a result, the wafer W is filled with the plating solution.
- the substrate processing apparatus 1 After the wafer W is filled with the plating solution, the substrate processing apparatus 1 lowers the heating unit 27 to the heating position and heats the plating solution filled on the wafer W.
- the substrate processing apparatus 1 may heat the plating solution by changing the heating position of the heating unit 27 .
- the substrate processing apparatus 1 may be provided with an inert gas supply unit (not shown), and after the inert gas is discharged into the chamber 20 by the inert gas supply unit, the plating solution may be heated by the heating unit 27 . Further, the substrate processing apparatus 1 may stop the rotation of the wafer W and heat the plating solution.
- the substrate processing apparatus 1 performs a second rinse process (S14). Specifically, after moving the heating unit 27 to the retracted position, the substrate processing apparatus 1 discharges the rinse liquid from the rinse liquid supply nozzle 25a and the second cleaning liquid supply nozzle 26a while rotating the wafer W, The wafer W is cleaned with a rinsing liquid.
- the substrate processing apparatus 1 performs drying processing (S15). Specifically, the substrate processing apparatus 1 increases the rotation speed of the wafer W, shakes off the rinse liquid remaining on the wafer W, and dries the wafer W.
- drying processing S15. Specifically, the substrate processing apparatus 1 increases the rotation speed of the wafer W, shakes off the rinse liquid remaining on the wafer W, and dries the wafer W.
- the substrate processing apparatus 1 performs unloading processing (S16). Specifically, the substrate processing apparatus 1 stops the rotation of the wafer W and unloads the wafer W from the chamber 20 by the substrate transfer device 17 .
- the substrate processing apparatus 1 By performing the above-described plating process, vapor of the plating solution, mist, etc. adhere to the heating unit 27 . Therefore, the substrate processing apparatus 1 according to the embodiment performs the heating unit cleaning process described below.
- FIG. 8 is a flowchart for explaining heating unit cleaning processing according to the embodiment.
- the heating unit cleaning process is performed, for example, after a predetermined number of wafers W are plated.
- the heating unit cleaning process may be performed, for example, after the cumulative time of the plating process reaches a predetermined time. Also, the heating unit cleaning process may be performed at any timing by an operator's operation, for example, by operating a cleaning operation button in maintenance mode.
- the substrate processing apparatus 1 performs loading processing (S20). Specifically, the substrate processing apparatus 1 carries the cleaning jig 40 into the chamber 20 by the substrate transfer device 17 and holds the cleaning jig 40 by the substrate holding part 21 . The substrate holding part 21 attracts the lower surface of the plate part 41 of the cleaning jig 40 and keeps the cleaning jig 40 horizontal.
- the substrate processing apparatus 1 performs cleaning processing (S21). Specifically, the substrate processing apparatus 1 lowers the heating unit 27 to the heating position, rotates the cleaning jig 40, and discharges the rinse liquid from the second cleaning liquid supply nozzle 26a. The rinse liquid discharged from the second cleaning liquid supply nozzle 26 a passes through the hole 44 of the cleaning jig 40 and is supplied above the plate portion 41 of the cleaning jig 40 . In addition, the substrate processing apparatus 1 may change the position of the heating unit 27 with respect to the heating position. Further, the substrate processing apparatus 1 may discharge the rinse liquid from the second cleaning liquid supply nozzle 26 a while changing the position of the heating unit 27 .
- the rinse liquid that has passed through the first hole 44a of the cleaning jig 40 collides with the wall portion 42 and is supplied radially inward, as indicated by the dashed arrow in FIG.
- the rinse liquid supplied radially inward collides with the center side of the heating section 27 and diffuses. As a result, the radially inner heating portion 27 is washed with the rinsing liquid.
- the rinse liquid that has passed through the second holes 44b of the cleaning jig 40 is supplied radially outward as indicated by the dashed arrow in FIG.
- the radially outer heating portion 27 is washed with the rinsing liquid.
- the rinsing liquid is supplied to the heating units 27 over a wide range in the radial direction and cleans the heating units 27 over a wide range.
- the rotation of the cleaning jig 40 spreads the rinsing liquid hitting the blades 43 over a wide area of the heating unit 27 . Therefore, the rinsing liquid is supplied to a wide range of heating portions 27 in the radial direction, and cleans the wide range of heating portions 27 .
- the cleaning jig 40 rotates, a swirling flow is formed by the vanes 43, and mist of the rinse liquid is diffused. Therefore, the rinse liquid cleans the heating unit 27 over a wide range.
- the substrate processing apparatus 1 performs a drying process (S22). Specifically, the substrate cleaning apparatus stops discharging the rinse liquid from the second cleaning liquid supply nozzle 26 a and rotates the cleaning jig 40 . For example, the substrate cleaning apparatus makes the rotation speed of the cleaning jig 40 higher than the rotation speed in the cleaning process. As the cleaning jig 40 rotates, a swirling flow is generated by the vane portion 43 to dry the inside of the heating portion 27 and the chamber 20 .
- the substrate processing apparatus 1 performs unloading processing (S23). Specifically, the substrate processing apparatus 1 stops the rotation of the cleaning jig 40 and unloads the cleaning jig 40 from the chamber 20 by the substrate transfer device 17 .
- the substrate processing apparatus 1 includes a substrate holding unit 21, a rotation driving unit 22, a heating unit 27 (an example of a lid), a substrate transfer device 17 (an example of a transfer mechanism), and a second cleaning liquid supply unit 26 (a cleaning liquid supply unit). part) and a controller 18 .
- the substrate holding part 21 holds a wafer W (an example of a substrate).
- the rotation driving section 22 rotates the substrate holding section 21 .
- the heating part 27 covers the upper surface of the wafer W held by the substrate holding part 21 .
- the substrate transfer device 17 transfers the cleaning jig 40 to the substrate holder 21 .
- the second cleaning liquid supply section 26 supplies a rinse liquid (an example of cleaning liquid) toward the lower surface of the cleaning jig 40 held by the substrate holding section 21 .
- the control unit 18 rotates the substrate holding unit 21 by controlling the rotation driving unit 22 . At least one hole 44 is formed in the cleaning jig 40 to allow the rinse liquid discharged from the second cleaning liquid supply section 26 to pass toward the heating
- the substrate processing apparatus 1 can efficiently wash the heating section 27 with the rinsing liquid by applying the rinsing liquid passing through the holes 44 to the lower surface of the heating section 27 .
- the substrate processing apparatus 1 can efficiently clean the lower surface of the heating unit 27 with the rinse liquid.
- the substrate processing apparatus 1 supplies the rinsing liquid and cleans the heating unit 27 while the cleaning jig 40 is held by the substrate holding unit 21 . If the rinsing liquid or the like adheres to a portion where the substrate holding portion 21 holds the wafer W, for example, the suction surface of the vacuum chuck of the substrate holding portion 21, the holding force of the wafer W in the substrate holding portion 21 may decrease.
- the substrate processing apparatus 1 prevents the rinsing liquid from adhering to the suction surface of the substrate holding section 21 when the heating section 27 is cleaned with the rinsing liquid, thereby preventing the holding force of the wafer W in the substrate holding section 21 from decreasing. can do.
- the cleaning jig 40 includes a plate portion 41 and at least one wall portion 42 .
- the plate portion 41 is held by the substrate holding portion 21 .
- the wall portion 42 extends from the plate portion 41 toward the heating portion 27 .
- the wall portion 42 is formed so that the rinse liquid that has passed through the hole 44 collides therewith.
- the substrate processing apparatus 1 can cause the rinse liquid to collide with the wall section 42 and diffuse the rinse liquid over a wide area of the heating section 27 . Therefore, the substrate processing apparatus 1 can efficiently clean the heating unit 27 .
- the wall portion 42 is formed perpendicular to the plate portion 41 .
- the substrate processing apparatus 1 can supply the rinsing liquid to the heating section 27 on the radial center side and clean the heating section 27 on the radial center side. Therefore, the substrate processing apparatus 1 can efficiently clean the heating unit 27 .
- the cleaning jig 40 includes a plate portion 41 and at least one blade portion 43 .
- the blade portion 43 extends from the plate portion 41 toward the heating portion 27 .
- the substrate processing apparatus 1 can diffuse the rinse liquid that collides with the blade portion 43 .
- the substrate processing apparatus 1 can diffuse the rinsing liquid by generating a swirling flow with the vanes 43 . Therefore, the substrate processing apparatus 1 can supply the rinsing liquid to a wide area of the heating unit 27 and efficiently clean the heating unit 27 .
- the substrate processing apparatus 1 rotates the cleaning jig 40 to generate a swirling flow by the vanes 43, and the swirling flow dries the inside of the chamber 20 early. can be done.
- the substrate processing apparatus 1 has a plating solution supply section 23 .
- the plating solution supply unit 23 supplies the plating solution to the upper surface of the wafer W held by the substrate holding unit 21 .
- the second cleaning liquid supply section 26 supplies the rinse liquid toward the lower surface of the wafer W held by the substrate holding section 21 .
- the substrate processing apparatus 1 can clean the heating unit 27 using the second cleaning liquid supply unit 26 that cleans the lower surface of the wafer W. That is, the substrate processing apparatus 1 can clean the heating section 27 by an existing device without separately providing a rinse liquid supply device for cleaning the lower surface of the heating section 27 .
- the holes 51 of the cleaning jig 50 according to the modification may be formed along the circumferential direction of the cleaning jig 50, specifically along the circumferential direction of the plate portion 41.
- FIG. 9 is a plan view showing the configuration of a cleaning jig 50 according to a modification of the embodiment.
- the substrate processing apparatus 1 according to the modification can increase the flow rate of the rinse liquid passing through the holes 51 and improve the cleaning efficiency of the heating unit 27 .
- the blade portion 61 of the cleaning jig 60 according to the modification may include, for example, a first inclined surface 62 and a second inclined surface 63, as shown in FIG.
- FIG. 10 is a diagram showing a cross section of a blade portion 61 in a cleaning jig 60 according to a modified example of the embodiment.
- the first inclined surface 62 has a first angle ⁇ 1 with respect to the plate portion 41 .
- the second inclined surface 63 has a second angle ⁇ 2 with respect to the plate portion 41 .
- the second angle ⁇ 2 is greater than the first angle ⁇ 1.
- the rotation driving section 22 of the substrate processing apparatus 1 according to the modification can rotate the substrate holding section 21 in a first rotation direction and a second rotation direction opposite to the first rotation direction. That is, the substrate processing apparatus 1 according to the modification can rotate the cleaning jig 60 forward and backward.
- the first inclined surface 62 is located upstream of the second inclined surface 63 in the rotation direction.
- the second inclined surface 63 is located upstream of the first inclined surface 62 in the rotational direction.
- the substrate processing apparatus 1 according to the modification rotates the substrate holding part 21 in the first rotation direction during the cleaning process in the heating part cleaning process.
- the substrate processing apparatus 1 according to the modification diffuses the rinse liquid by the swirling flow formed by the first inclined surface 62 . Further, the substrate processing apparatus 1 according to the modification diffuses the rinse liquid that collides with the first inclined surface 62 .
- the substrate processing apparatus 1 according to the modification can diffuse the rinse liquid upward by the first inclined surface 62, and can efficiently clean the heating unit 27 with the rinse liquid.
- the substrate processing apparatus 1 according to the modification rotates the substrate holding part 21 in the second rotation direction during the drying process in the heating part cleaning process.
- the substrate processing apparatus 1 according to the modification generates a swirl flow by the second inclined surface 63 .
- the substrate processing apparatus 1 according to the modification can generate a swirl flow having a higher velocity than the swirl flow generated by rotation in the first rotation direction by the second inclined surface 63, and the inside of the chamber 20 can be dried efficiently. can be done.
- the nozzle that supplies the rinse liquid to the lower surface of the wafer W in the plating process and the nozzle that supplies the rinse liquid in the heating part cleaning process may be different nozzles.
- a nozzle that supplies the rinse liquid to the lower surface of the wafer W in the plating process and a nozzle that supplies the rinse liquid in the heating part cleaning process have different ejection angles for ejecting the rinse liquid. Accordingly, the substrate processing apparatus 1 according to the modification can eject the rinse liquid at an appropriate ejection angle in each process.
- the wall portion 71 of the cleaning jig 70 according to the modification is formed so as to be inclined with respect to the plate portion 41 .
- the wall portion 71 includes at least one of a first wall portion 72 shown in FIG. 11 and a second wall portion 73 shown in FIG.
- FIG. 11 is a diagram showing a cross section of a first wall portion 72 of a cleaning jig 70 according to a modification of the embodiment.
- FIG. 12 is a diagram showing a cross section of the second wall portion 73 of the cleaning jig 70 according to the modified example of the embodiment.
- 11 and 12 are cross-sectional views at positions corresponding to IV-IV in FIG.
- the first wall portion 72 is formed such that its upper end faces radially inward of the cleaning jig 70 .
- the second wall portion 73 is formed such that its upper end faces radially outward of the cleaning jig 70 .
- the wall portion 71 may include a first wall portion 72 and a second wall portion 73 .
- the wall portion 71 may include two or more of a wall portion 42 (see FIG. 4 ), a first wall portion 72 , and a second wall portion 73 that are perpendicular to the plate portion 41 .
- At least one of the first wall portion 72 and the second wall portion 73 allows the rinsing liquid to spread over a wide range, thereby efficiently cleaning the heating portion 27 . can.
- the substrate processing apparatus 1 according to the modification may fill the plating solution and heat the plating solution in different chambers. Further, the substrate processing apparatus 1 according to the modification is not limited to an apparatus that performs plating processing, and may be an apparatus that performs processing by supplying various processing liquids to the wafer W. FIG.
- the cleaning jig 40 may have the holes 51 formed in the circumferential direction of the cleaning jig 40 , and the blade portion 43 may include a first inclined surface 62 and a second inclined surface 63 .
- the cleaning jig 40 may have the holes 51 formed in the circumferential direction of the cleaning jig 40 , and the wall portion 42 may include at least one of the first wall portion 72 and the second wall portion 73 .
- Substrate processing device 4 Control device 16 Processing unit 17 Substrate transfer device (transfer mechanism) 18 control unit 20 chamber 21 substrate holding unit 22 rotation driving unit 23 plating solution supply unit 24 first cleaning solution supply unit 25 rinse solution supply unit 26 second cleaning solution supply unit (cleaning solution supply unit) 27 heating unit (cover) 40, 50, 60, 70 cleaning jig 41 plate portions 42, 71 wall portions 43, 61 blade portions 44, 51 hole 45 inclined surface 62 first inclined surface 63 second inclined surface 72 first wall portion 73 second wall Department
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Abstract
Description
図1は、実施形態に係る基板処理装置1の概略構成を示す図である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。また、X軸方向を左右方向とする。
次に、処理ユニット16の構成について図2を参照し説明する。図2は、実施形態に係る処理ユニット16の構成を示す図である。処理ユニット16は、ウェハWにめっき処理を行うユニットである。具体的には、処理ユニット16は、ウェハWに無電解めっき処理を行うユニットである。
次に、洗浄用治具40の構成について図3~図6を参照し説明する。図3は、実施形態に係る洗浄用治具40の構成を示す平面図である。図4は、実施形態に係る洗浄用治具40の図3のIV-IVにおける断面図である。図5は、実施形態に係る洗浄用治具40の図3のIV-IVにおける断面図である。図6は、実施形態に係る洗浄用治具40の図3のIV-IVにおける断面図である。
次に、実施形態に係るめっき処理について図7を参照し説明する。図7は、実施形態に係るめっき処理を説明するフローチャートである。
次に、実施形態に係る加熱部洗浄処理について図8を参照し説明する。図8は、実施形態に係る加熱部洗浄処理を説明するフローチャートである。加熱部洗浄処理は、例えば、所定枚数のウェハWにめっき処理を行った後に行われる。加熱部洗浄処理は、例えば、めっき処理の累積時間が所定時間となった後に行われてもよい。また、加熱部洗浄処理は、作業者などの操作、例えば、メンテナンスモードにおける洗浄操作ボタンの操作によって、任意のタイミングによって行われてもよい。
基板処理装置1は、基板保持部21と、回転駆動部22と、加熱部27(蓋体の一例)と、基板搬送装置17(搬送機構の一例)と、第2洗浄液供給部26(洗浄液供給部の一例)と、制御部18とを備える。基板保持部21は、ウェハW(基板の一例)を保持する。回転駆動部22は、基板保持部21を回転させる。加熱部27は、基板保持部21によって保持されたウェハWの上面を覆う。基板搬送装置17は、洗浄用治具40を基板保持部21に搬送する。第2洗浄液供給部26は、基板保持部21に保持された洗浄用治具40の下面に向けてリンス液(洗浄液の一例)を供給する。制御部18は、回転駆動部22を制御することによって、基板保持部21を回転させる。洗浄用治具40には、第2洗浄液供給部26から吐出されるリンス液を加熱部27に向けて通過させる孔44が少なくとも1つ形成される。
変形例に係る洗浄用治具50の孔51は、例えば、図9に示すように、洗浄用治具50の周方向、具体的には板部41の周方向に沿って形成されてもよい。図9は、実施形態の変形例に係る洗浄用治具50の構成を示す平面図である。これにより、変形例に係る基板処理装置1は、孔51を通過するリンス液の流量を多くすることができ、加熱部27の洗浄効率を向上させることができる。
4 制御装置
16 処理ユニット
17 基板搬送装置(搬送機構)
18 制御部
20 チャンバ
21 基板保持部
22 回転駆動部
23 めっき液供給部
24 第1洗浄液供給部
25 リンス液供給部
26 第2洗浄液供給部(洗浄液供給部)
27 加熱部(蓋体)
40、50、60、70 洗浄用治具
41 板部
42、71 壁部
43、61 羽根部
44、51 孔
45 傾斜面
62 第1傾斜面
63 第2傾斜面
72 第1壁部
73 第2壁部
Claims (10)
- 基板を保持する基板保持部と、
前記基板保持部を回転させる回転駆動部と、
前記基板保持部によって保持された前記基板の上面を覆う蓋体と、
洗浄用治具を前記基板保持部に搬送する搬送機構と、
前記基板保持部に保持された前記洗浄用治具の下面に向けて洗浄液を供給する洗浄液供給部と、
前記回転駆動部を制御することによって、前記基板保持部を回転させる制御部と
を備え、
前記洗浄用治具には、前記洗浄液供給部から吐出される前記洗浄液を前記蓋体に向けて通過させる孔が少なくとも1つ形成される
基板処理装置。 - 前記洗浄用治具は、
前記基板保持部に保持される板部と、
前記板部から前記蓋体側に延びる少なくとも1つの壁部と
を備え、
前記壁部は、前記孔を通過した前記洗浄液が衝突するように形成される
請求項1に記載の基板処理装置。 - 前記壁部は、前記板部に対して直交するように形成される
請求項2に記載の基板処理装置。 - 前記壁部は、前記板部に対して傾斜するように形成される
請求項2に記載の基板処理装置。 - 前記壁部は、
上端が前記洗浄用治具の径方向内側に向くように形成される第1壁部、および上端が前記洗浄用治具の径方向外側に向くように形成される第2壁部の少なくとも1つを含む
請求項4に記載の基板処理装置。 - 前記洗浄用治具は、
前記基板保持部に保持される板部と、
前記板部から前記蓋体側に延びる少なくとも1つの羽根部と
を備える請求項1~5のいずれか1つに記載の基板処理装置。 - 前記回転駆動部は、第1回転方向、および前記第1回転方向とは逆方向の第2回転方向に、前記基板保持部を回転可能であり、
前記羽根部は、
前記板部に対して第1角度を有する第1傾斜面と、
前記板部に対して、前記第1角度よりも大きい第2角度を有する第2傾斜面と
を備え、
前記洗浄用治具が前記第1回転方向に回転する場合に、前記第1傾斜面は、前記第2傾斜面よりも回転方向において上流側に位置し、
前記洗浄用治具が前記第2回転方向に回転する場合に、前記第2傾斜面は、前記第1傾斜面よりも回転方向において上流側に位置する
請求項6に記載の基板処理装置。 - 前記基板保持部に保持された前記基板の上面に処理液を供給する処理液供給部
を備え、
前記洗浄液供給部は、前記基板保持部によって保持される前記基板の下面に向けて洗浄液を供給する
請求項1~7のいずれか1つに記載の基板処理装置。 - 前記孔は、前記洗浄用治具の周方向に沿って形成される
請求項1~8のいずれか1つに記載の基板処理装置。 - 基板を保持可能な基板保持部に、洗浄用治具を搬送する搬送工程と、
前記洗浄用治具を保持した前記基板保持部を回転させる回転工程と、
前記基板保持部に保持された前記洗浄用治具の下面に向けて洗浄液を吐出する吐出工程と
を有し、
前記洗浄用治具には、洗浄液供給部から吐出される前記洗浄液を前記洗浄用治具の上面を覆う蓋体に向けて通過させる孔が少なくとも1つ形成される
基板処理方法。
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JP2009187996A (ja) * | 2008-02-04 | 2009-08-20 | Tokyo Electron Ltd | 基板処理装置 |
JP2010016315A (ja) * | 2008-07-07 | 2010-01-21 | Tokyo Electron Ltd | 回転塗布装置の洗浄用治具および洗浄方法 |
JP2014130935A (ja) * | 2012-12-28 | 2014-07-10 | Tokyo Electron Ltd | 基板処理装置を洗浄するための洗浄治具および洗浄方法、および基板処理システム |
JP2015050408A (ja) * | 2013-09-04 | 2015-03-16 | 株式会社Screenホールディングス | 基板処理装置および洗浄用基板 |
WO2020100829A1 (ja) * | 2018-11-16 | 2020-05-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理装置の洗浄方法 |
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JP2014130935A (ja) * | 2012-12-28 | 2014-07-10 | Tokyo Electron Ltd | 基板処理装置を洗浄するための洗浄治具および洗浄方法、および基板処理システム |
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