WO2022151886A1 - Chip transfer method, wafer, and transfer head for grabbing chip - Google Patents

Chip transfer method, wafer, and transfer head for grabbing chip Download PDF

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Publication number
WO2022151886A1
WO2022151886A1 PCT/CN2021/137438 CN2021137438W WO2022151886A1 WO 2022151886 A1 WO2022151886 A1 WO 2022151886A1 CN 2021137438 W CN2021137438 W CN 2021137438W WO 2022151886 A1 WO2022151886 A1 WO 2022151886A1
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Prior art keywords
micro
led chips
led chip
wafer
led
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PCT/CN2021/137438
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French (fr)
Chinese (zh)
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曹轩
龙浩晖
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华为技术有限公司
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Publication of WO2022151886A1 publication Critical patent/WO2022151886A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Definitions

  • the present application relates to the field of display technology, and more particularly, to a method and device for transferring Micro-LED chips.
  • the performance of the Micro-LED display panel is relatively good in terms of color gamut, contrast ratio, brightness, efficiency, reliability and lifespan. Therefore, the Micro-LED display panel is considered to be the next generation display panel.
  • the Micro-LED chip In the production and preparation of the Micro-LED display panel, since the driving backplane for driving the Micro-LED chip and the Micro-LED are prepared on different substrates, the Micro-LED chip needs to be assembled on the driving backplane.
  • mass transfer technologies such as elastic stamp pick-up transfer technology can be used to assemble a mass of Micro-LED chips onto the driver backplane.
  • the transfer head In the process of realizing Micro-LED transfer through the elastic stamp pick-up transfer technology, the transfer head is in direct contact with the Micro-LED chip and the driving substrate, respectively, and the material of the transfer head and the material of the driving backplane have different thermal expansion coefficients.
  • the transfer efficiency of the Micro-LED chip is limited by the pixel density of the Micro-LED chip and the area of the transfer head, resulting in low production efficiency and high cost.
  • the present application provides a transfer method for Micro-LED chips, a wafer, and a transfer head for grabbing chips, and the transfer method can realize the transfer of a large number of Micro-LED chips with high efficiency.
  • a method for transferring a Micro-LED chip comprising: placing a plurality of the Micro-LED chips with the hydrophobic layer in an aqueous solution middle; grab a plurality of the Micro-LED chips in the aqueous solution by a transfer head, the transfer head includes a plurality of grooves, the grooves are used for accommodating the Micro-LED chips, and the grooves are The bottom is provided with a hydrophilic layer, so that the hydrophobic layer of the grabbed Micro-LED chips is far away from the bottom of the groove; the grabbed multiple Micro-LED chips are fixed on the target substrate, so that the The hydrophobic layer of the Micro-LED chip is attached to the target substrate.
  • the transfer head can transfer the water in the aqueous solution.
  • Multiple Micro-LED chips are grabbed into the grooves of the transfer head, so that the self-assembly of the Micro-LED chips and the transfer head can be realized by the aqueous solution, thereby realizing the rapid assembly of the large-area transfer head and the Micro-LED chip, and improving the Micro-LED chip. - Transfer efficiency of LED chips.
  • the method before the placing the plurality of the Micro-LED chips with the hydrophobic layer in the aqueous solution, the method further includes: on the wafer preparing a plurality of the Micro-LED chips; preparing the hydrophobic layer on the side of the Micro-LED chips away from the wafer; peeling off the plurality of the Micro-LED chips and the wafer.
  • a plurality of vertical Micro-LED chips are epitaxially etched on a wafer.
  • the peeling between the plurality of Micro-LED chips and the wafer includes: moving away from the Micro-LED chips from the wafer A laser is irradiated on one side to peel off the plurality of Micro-LED chips and the wafer.
  • the method before the peeling between the plurality of the Micro-LED chips and the wafer, the method further includes: -Dead-dot detection is performed on each Micro-LED chip in the LED chips to obtain a dead-dot Micro-LED chip; the peeling between the plurality of Micro-LED chips and the wafer includes: according to the bad pixel Pointing the Micro-LED chips, and peeling off the Micro-LED chips other than the defective Micro-LED chips among the plurality of Micro-LED chips and the wafer.
  • the dead-dot Micro-LED chip can be understood as the Micro-LED chip does not light up when it is powered on. And/or, when the Micro-LED chip is powered on, the brightness of the Micro-LED chip and/or the wavelength of the light emitted by the Micro-LED chip do not meet the required specifications.
  • the plurality of Micro-LED chips except the dead-dot Micro-LED chips are The peeling between the Micro-LED chip and the wafer includes: determining a to-be-irradiated area according to the dead-dot Micro-LED chip, where the to-be-irradiated area is where the dead-dot Micro-LED chip is removed from the wafer. In the area to be irradiated, the laser is irradiated from the side of the wafer away from the Micro-LED chip, so that the defective Micro-LED chips are removed from the Micro-LED chips. - Peeling between Micro-LED chips other than LED chips and the wafer.
  • the method before the peeling between the plurality of the Micro-LED chips and the wafer, the method further includes: placing the wafer on above the aqueous solution, so that after the peeling between the plurality of the Micro-LED chips and the wafer, the plurality of the Micro-LED chips with the hydrophobic layer are placed in the aqueous solution wherein the hydrophobic layer faces the aqueous solution and the wafer faces away from the aqueous solution.
  • the wafer is placed above the aqueous solution, it can be understood that the wafer is directly above or obliquely above the aqueous solution, or the like.
  • the angle between the wafer and the aqueous solution is between 0° and 90°.
  • the method before the grabbing of the plurality of Micro-LED chips in the aqueous solution by the transfer head, the method further includes: applying the transfer head to the aqueous solution. A plurality of the Micro-LED chips are stirred.
  • the plurality of good-quality Micro-LED chips in the aqueous solution are stirred for a fixed period of time.
  • the colors displayed by the plurality of good Micro-LED chips as a whole have no chromatic aberration as much as possible, so as to avoid wavelength binning.
  • the grabbing a plurality of the Micro-LED chips in the aqueous solution by a transfer head includes: placing the transfer head on a plurality of the Micro-LED chips - Below the LED chip, the groove of the transfer head faces the Micro-LED chip; the transfer head is moved out of the aqueous solution to grab a plurality of the Micro-LED chips.
  • moving the transfer head out of the aqueous solution may be moving the transfer head out of the aqueous solution along a direction that forms a first angle with the horizontal plane.
  • the first angle is greater than 0° and less than 90°.
  • the method before the grabbing of the plurality of Micro-LED chips in the aqueous solution by the transfer head, the method further comprises: preparing the transfer head.
  • the preparation of the transfer head includes: preparing a transparent layer on a glass substrate; preparing a polymer material array layer on the side of the transparent layer away from the glass substrate, the polymer material array The layer includes a plurality of polymer material layers, and the adjacent polymer material layers form the grooves.
  • the fixing the grabbed plurality of the Micro-LED chips on the target substrate includes: placing the transfer head above the target substrate , wherein the hydrophobic layer of the Micro-LED chip faces the target substrate, and the Micro-LED chip faces away from the target substrate; the laser is irradiated from the side of the transfer head away from the target substrate, so that the The transfer head and the hydrophilic layer are peeled off, so that the grabbed multiple Micro-LED chips are peeled off the transfer head and fixed on the target substrate.
  • the target substrate includes a stacked adhesive layer and a driving backplane
  • the adhesive layer is used to fix a plurality of the Micro-LED chips to the target substrate superior.
  • the method further includes: heating the target substrate , remove the hydrophobic layer of the Micro-LED chip.
  • the Micro-LED chip further has a first electrode layer, and the first electrode layer is disposed between the Micro-LED chip and the hydrophobic layer between.
  • a first electrode may be evaporated on a side of each Micro-LED chip away from the wafer to form a first electrode layer.
  • the first electrode of the first electrode layer is a P electrode.
  • the method further includes: placing the Micro-LED chips on the target substrate.
  • a second electrode layer is prepared on the side of the chip away from the target substrate.
  • the second electrode of the second electrode layer is an N-pole.
  • the transfer head further includes: a glass substrate; a transparent layer disposed on the glass substrate; a transparent layer disposed on the transparent layer away from the glass substrate
  • the polymer material array layer on the side, the polymer material array layer includes a plurality of polymer material layers, and the groove is formed between the adjacent polymer material layers; the transfer head is far away from the Micro-LED chip
  • the transparent layer and the hydrophilic layer are peeled off, so that the grabbed Micro-LED chips are peeled off the transfer head and fixed on the target substrate .
  • the material of the transparent layer may be triazene, polyimide PI, benzocyclobutene BCB and other materials.
  • the material of the polymer material layer may be a hydrophobic polymer material, a material composed of silicon dioxide and hexamethyldisilazane HMDS, and the like.
  • the material of the hydrophobic layer is a self-assembled thin film SAM.
  • a wafer in a second aspect, includes a micro light-emitting diode Micro-LED chip, and a side of the Micro-LED chip away from the wafer has a hydrophobic layer.
  • a hydrophobic layer is arranged on the side of the Micro-LED chip away from the wafer, so that the self-assembly of the Micro-LED chip and the transfer head can be realized by an aqueous solution later.
  • the relationship between the Micro-LED chip and the wafer is irradiated by laser light. peel off.
  • the Micro-LED chip further has a first electrode layer, and the first electrode layer is disposed between the Micro-LED chip and the hydrophobic layer between.
  • the material of the hydrophobic layer is a self-assembled thin film SAM.
  • a transfer head for grasping a micro light-emitting diode Micro-LED chip the Micro-LED chip has a hydrophobic layer
  • the transfer head includes: a groove, and the groove is used for accommodating In the Micro-LED chip, the bottom of the groove is provided with a hydrophilic layer, so that the hydrophobic layer of the Micro-LED chip that is grasped is far away from the bottom of the groove.
  • the transfer head can grab multiple Micro-LED chips in the aqueous solution into the grooves of the transfer head, so that Micro-LED chips can be realized by the aqueous solution. -Self-assembly of the LED chip and the transfer head, thereby realizing the rapid assembly of the large-area transfer head and the Micro-LED chip, and improving the transfer efficiency of the Micro-LED chip.
  • the transfer head further includes: a glass substrate; a transparent layer disposed on the glass substrate; a transparent layer disposed on the transparent layer away from the glass substrate
  • the polymer material array layer on the side, the polymer material array layer includes a plurality of polymer material layers, and the grooves are formed between adjacent polymer material layers.
  • the transparent layer and the hydrophilic layer are peeled off, so as to peel off the transfer head from the grabbed multiple Micro-LED chips.
  • an apparatus in a fourth aspect, has the function of implementing any one of the above-mentioned first aspect and certain implementation manners of the first aspect.
  • the functions can be implemented by hardware, or by executing corresponding software by hardware.
  • the hardware or software includes one or more modules or units corresponding to the above functions.
  • an apparatus comprising one or more processors; one or more memories; the one or more memories stores one or more computer programs, the one or more computer programs comprising instructions , when the instruction is executed by the one or more processors, causing the device to execute the method for transferring a Micro-LED chip in any one of the first aspect and some implementations of the first aspect .
  • a storage medium is provided, and a computer program or instruction is stored on the storage medium, and when the computer program or instruction is executed, the computer executes the above-mentioned first aspect and some implementations of the first aspect.
  • the transfer method of the Micro-LED chip in any implementation manner.
  • a chip system comprising: a processor configured to execute the method for transferring a Micro-LED chip in any one of the above-mentioned first aspect and some implementations of the first aspect.
  • Figure 1 is a schematic radar chart of various properties of different display panels.
  • FIG. 2 and FIG. 3 are schematic diagrams of an example of Micro-LED chip mass transfer technology.
  • FIG. 4 is a schematic diagram of another example of Micro-LED chip mass transfer technology.
  • FIG. 5 is a schematic flowchart of an example of a method for mass transfer of Micro-LED chips according to an embodiment of the present application.
  • 6 to 10 are schematic diagrams of transferring a Micro-LED chip from a wafer according to an embodiment of the present application.
  • FIG. 11 is a schematic diagram of binning of dead pixels and wavelength consistency in an example of a Micro-LED chip provided by an embodiment of the present application.
  • FIG. 12 is a schematic structural diagram of an example of a transfer head provided by an embodiment of the present application.
  • FIG. 13 and FIG. 14 are schematic diagrams of transferring a huge amount of Micro-LED chips by the transfer head provided by the embodiment of the application.
  • FIG. 15 is a schematic structural diagram of an example of a target substrate provided by an embodiment of the present application.
  • 16 to 18 are schematic diagrams illustrating an example of transferring a Micro-LED chip to a target substrate according to an embodiment of the present application.
  • orientations or positional relationships indicated by “width”, “upper”, “lower”, “horizontal”, “bottom”, etc. involved in the embodiments of the present application are based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present application. The description is applied and simplified rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as limiting the invention.
  • At least one involved in the embodiments of the present application includes one or more; wherein, multiple refers to greater than or equal to two.
  • words such as “first” and “second” are only used for the purpose of distinguishing the description, and should not be understood as indicating or implying relative importance, nor should it be understood as indicating or implied order.
  • references to "one embodiment” or “some embodiments” or the like described in the embodiments of the present application mean that a particular feature, structure or characteristic described in connection with the embodiment is included in one or more embodiments of the present application.
  • appearances of the phrases “in one embodiment,” “in some embodiments,” “in other embodiments,” “in other embodiments,” etc. in various places in this specification are not necessarily All refer to the same embodiment, but mean “one or more but not all embodiments” unless specifically emphasized otherwise.
  • the terms “including”, “including”, “having” and their variants mean “including but not limited to” unless specifically emphasized otherwise.
  • the display panel prepared by the method provided in the embodiments of the present application can be applied to electronic devices, and the electronic devices can include mobile phones, tablet computers, wearable devices, TVs, in-vehicle devices, augmented reality (AR)/virtual reality (virtual reality) reality, VR) devices, notebook computers, ultra-mobile personal computers (ultra-mobile personal computers, UMPCs), netbooks, personal digital assistants (personal digital assistants, PDAs) and other electronic devices, the embodiments of the present application describe the specific types of electronic devices No restrictions apply. Exemplary embodiments of the electronic device include, but are not limited to, onboard Or portable electronic devices with other operating systems.
  • the display panel can be a liquid crystal display (LCD), an organic light-emitting diode (OLED), an active-matrix organic light-emitting diode or an active-matrix organic light-emitting diode (active-matrix organic light).
  • LCD liquid crystal display
  • OLED organic light-emitting diode
  • active-matrix organic light-emitting diode active-matrix organic light-emitting diode
  • active-matrix organic light active-matrix organic light.
  • emitting diode AMOLED
  • flexible light-emitting diode flex light-emitting diode
  • FLED flexible light-emitting diode
  • Mini-LED Micro-LED
  • Micro-OLED quantum dot light-emitting diode
  • QLED quantum dot light emitting diodes
  • Figure 1 is a schematic radar chart of various properties of different display panels.
  • the Micro-LED display panel has the best color gamut, contrast, brightness, efficiency, reliability and life performance. . Therefore, the Micro-LED display panel is considered to be the next generation display panel.
  • the driving backplane for driving the Micro-LED chips and the Micro-LED chips are prepared on different substrates, it is necessary to assemble the Micro-LED chips on the driving backplane.
  • mass transfer technology can be used to assemble a mass of Micro-LED chips onto a driver backplane. Among them, huge amount is used to indicate a huge amount.
  • mass transfer technology includes elastic stamp pick and place technology and laser beam splitting array technology.
  • FIG. 2 is a schematic diagram of assembling a huge number of Micro-LED chips on a driving backplane based on the elastic stamp pick-up and transfer technology.
  • the elastic stamp pick-up transfer technology is to first use the elastic stamp combined with the high-precision motion control transfer head, and use the van der Waals force or the polymer adhesion force to separate the epitaxially grown Micro-LED 101, Micro-LED 102 and Micro-LED 103 from their respective removed from the wafer and adhered to the transfer head.
  • FIG. 3 is a schematic diagram of a transfer head assembling a huge number of Micro-LED chips on a driving backplane. As shown in FIG. 3 , the transfer head 140 then places the Micro-LED array 110 on the driving backplane 120 to form the display panel 130 .
  • the driving backplane 120 may be a thin film transistor (thin film transistor, TFT).
  • the transfer head In the process of realizing Micro-LED transfer through the elastic stamp pick-up and transfer technology, the transfer head is in direct contact with the Micro-LED chip and the driving substrate, respectively.
  • the transfer efficiency of the Micro-LED chip is limited by the pixel density of the Micro-LED chip and the area of the transfer head, resulting in low production efficiency and high cost.
  • FIG. 4 is a schematic diagram of assembling a huge amount of Micro-LED chips on a driving backplane based on the mass transfer technology based on the laser beam splitting array technology.
  • the laser beam 210 rapidly transfers a large number of Micro-LEDs on the substrate 230 to the driving backplane 240 through a mask 220 .
  • the present application provides a method for transferring Micro-LED chips, through which the transfer of a huge amount of Micro-LED chips with high efficiency and high yield can be realized.
  • FIG. 5 is a schematic flowchart of a method 300 for transferring a Micro-LED chip according to an embodiment of the present application. As shown in Figure 5, the method 300 includes:
  • a plurality of vertical Micro-LED chips are epitaxially etched, and the plurality of vertical Micro-LED chips form a Micro-LED chip array layer.
  • the material of the wafer may be sapphire, silicon and other materials.
  • the embodiment of the present application does not limit the shape of the wafer.
  • the embodiments of the present application do not limit the arrangement of the plurality of Micro-LED chips in the Micro-LED chip array layer.
  • a vertical Micro-LED chip array layer 402 is epitaxially etched.
  • the Micro-LED chip array layer 402 includes four Micro-LED chips, namely, Micro-LED chip 4021 , Micro-LED chip 4022 , Micro-LED chip 4023 and Micro-LED chip 4024 .
  • the first electrodes are respectively evaporated on the side of each Micro-LED chip away from the wafer. That is, one Micro-LED chip corresponds to one first electrode, and the plurality of first electrodes form a first electrode array layer.
  • a first electrode array layer 403 is prepared on the side of the Micro-LED chip array layer 402 away from the wafer 401 .
  • the first electrode 4031 is evaporated on the side of the Micro-LED chip 4021 away from the wafer 401
  • the first electrode 4032 is evaporated on the side of the Micro-LED chip 4022 away from the wafer 401
  • the first electrode 4032 is evaporated on the side of the Micro-LED chip 4022 away from the wafer 401
  • the first electrode 4033 is evaporated on one side of the wafer 401 and the first electrode 4034 is evaporated on the side of the Micro-LED chip 4024 away from the wafer 401 .
  • the first electrode 4031 , the first electrode 4032 and the first electrode 4033 form the first electrode array layer 403 .
  • the dead-dot Micro-LED chip can be understood as that the Micro-LED chip does not light up when it is powered on. And/or, when the Micro-LED chip is powered on, the brightness of the Micro-LED chip and/or the wavelength of the light emitted by the Micro-LED chip do not meet the required specifications.
  • the embodiments of the present application do not limit the method for detecting dead pixels.
  • each Micro-LED may be inspected for dead pixels based on electroluminescent (EL) inspection.
  • EL electroluminescent
  • the principle of EL detection can be to light up the Micro-LED chip through a probe and pass current to the Micro-LED chip, so as to detect the dead point of the Micro-LED chip.
  • the principle of EL detection may also be to light up the Micro-LED chip by induction of a non-contact electromagnetic field, so as to perform dead pixel detection on the Micro-LED chip.
  • each Micro-LED can be inspected for dead pixels based on photoluminescence (PL) inspection and auto optical inspection (AOI).
  • PL photoluminescence
  • AOI auto optical inspection
  • the principle of PL detection can be to detect the dead pixels of Micro-LED chips through the light emission of the laser semiconductor itself.
  • the principle of AOI detection may be to detect dead pixels of Micro-LED chips through optical observation.
  • Micro-LED chip 4021, Micro-LED chip 4022, Micro-LED chip 4023 and Micro-LED chip 4024 After detecting the dead pixels of four Micro-LED chips, Micro-LED chip 4021, Micro-LED chip 4022, Micro-LED chip 4023 and Micro-LED chip 4024, it is found that the Micro-LED chip The chip 4022 is a bad-dot Micro-LED chip, and the Micro-LED chip 4021 , the Micro-LED chip 4023 and the Micro-LED chip 4024 are good-quality Micro-LED chips. Among them, a good Micro-LED chip can be understood as a non-dead-dot Micro-LED chip.
  • the foregoing S303 may be executable or not, which is not limited in this application.
  • a hydrophobic array layer is prepared on the side of the first electrode array layer away from the Micro-LED array layer.
  • a hydrophobic layer is prepared on the side of each first electrode away from the Micro-LED, that is, one first electrode corresponds to one hydrophobic layer, and the multiple hydrophobic layers form a hydrophobic array layer.
  • the material of the hydrophobic array layer can be a self-assembled monolayer (SAM).
  • SAM self-assembled monolayer
  • a hydrophobic array layer 404 is prepared on the side of the first electrode array layer 403 away from the Micro-LED array layer 402 .
  • the hydrophobic layer 4041 is prepared on the side of the first electrode 4031 away from the Micro-LED array layer 402
  • the hydrophobic layer 4042 is prepared on the side of the first electrode 4032 away from the Micro-LED array layer 402
  • the first electrode 4033 is away from the Micro-LED array layer 402.
  • - Prepare a hydrophobic layer 4043 on one side of the LED array layer 402 and prepare a hydrophobic layer 4044 on the side of the first electrode 4034 away from the Micro-LED array layer 402 .
  • the hydrophobic layer 4041 , the hydrophobic layer 4042 , the hydrophobic layer 4043 and the hydrophobic layer 4044 form the hydrophobic array layer 404 .
  • a plurality of Micro-LED chips can be understood as a huge number of Micro-LED chips.
  • a laser lift off (LLO) technique can be used to lift off a good Micro-LED chip in an aqueous solution.
  • the wafer obtained after S304 is moved to the top of the aqueous solution, and the laser is irradiated from the side of the wafer away from the Micro-LED chip. Since the laser energy decomposes the gallium nitride at the interface between the wafer and the Micro-LED chip GaN buffer layer, thereby realizing the peeling between the Micro-LED chip and the wafer.
  • the above-mentioned S303 it is necessary to peel off the Micro-LED chips except the defective Micro-LED chips among the multiple Micro-LED chips on the wafer and the wafer, that is, to realize the separation of the micro-LED chips from the wafer.
  • the good-quality Micro-LED chips are peeled off from the wafer.
  • the Micro-LED chips and the wafers other than the Micro-LED chips with dead pixels can be peeled off, that is, the Micro-LED chips and wafers with good quality can be realized. peel between.
  • the area occupied by each good Micro-LED chip on the wafer (for the convenience of description, denoted as the area to be irradiated) is determined according to the defective Micro-LED chips.
  • the laser is irradiated from the side of the wafer away from the Micro-LED chip. Since the laser energy decomposes the gallium nitride GaN buffer layer at the interface between the wafer and each good Micro-LED chip, multiple Micro-LED chips on the wafer are realized. -Peeling between a good Micro-LED chip and a wafer in LED chips.
  • the above-mentioned area to be irradiated can be determined by a corresponding positioning system to determine the contour figure of the area to be irradiated.
  • irradiating the laser from the side of the wafer away from the Micro-LED chip can be understood as irradiating the laser from the side of the wafer away from the Micro-LED chip in the contour pattern corresponding to the to-be-irradiated area.
  • the area occupied by each dead-dot Micro-LED chip on the wafer is determined, and the dead-dot Micro-LED chips on the wafer are removed from the wafer.
  • the laser is irradiated from the side of the wafer away from the Micro-LED chip. Since the laser energy decomposes the gallium nitride GaN buffer layer at the interface between the wafer and each good Micro-LED chip, In this way, the good Micro-LED chips among the multiple Micro-LED chips on the wafer are peeled off from the wafer.
  • the plurality of Micro-LED chips with the hydrophobic layer and the first electrode obtained by S305 can be directly placed in an aqueous solution.
  • the wafer obtained after S304 needs to be placed above the aqueous solution, wherein the hydrophobicity of the Micro-LED chip is The layer faces the aqueous solution, and the wafer faces away from the aqueous solution; then the Micro-LED chip and the wafer are peeled off (S305); after the Micro-LED chip and the wafer are peeled off, the Micro-LED chip will fall below In the aqueous solution of , a plurality of Micro-LED chips having a hydrophobic layer and a first electrode are placed in the aqueous solution (S306).
  • the wafer is placed above the aqueous solution, it can be understood that the wafer is directly above or obliquely above the aqueous solution, or the like.
  • the angle between the wafer and the aqueous solution is between 0° and 90°.
  • the wafer 401 prepared after S304 moves to just above the aqueous solution 405, and from the side of the wafer 401 away from the aqueous solution 405, only the good Micro-LED chips (Micro-LED chips) are irradiated with laser light.
  • chip 4021, Micro-LED chip 4022 and Micro-LED chip 4023 the laser energy decomposes the wafer 401 and the interface of the good Micro-LED chip 4021, the good Micro-LED chip 4022 and the good Micro-LED chip 4023 respectively.
  • the gallium nitride GaN buffer layer is used to realize the peeling between the good Micro-LED chip and the wafer 401.
  • Micro-LED chips 410 , Micro-LED chips 430 , and Micro-LED chips 440 fall into aqueous solution 405 .
  • Micro-LED chip 420 is still on wafer 401 . Due to the existence of the hydrophobic layer of the Micro-LED chip, after the Micro-LED chip falls into the aqueous solution, along the direction of the depth of the aqueous solution, the order is the hydrophobic layer, the first electrode layer, and the Micro-LED chip.
  • the plurality of good-quality Micro-LED chips in the aqueous solution are stirred for a fixed period of time.
  • Each wafer includes Micro-LEDs with three display colors, so that there are wavelength bins.
  • there are dead-dot Micro-LEDs on each wafer for example, a Micro-LED with black dots is a dead-dot Micro-LED.
  • the Micro-LED chips in the aqueous solution can display one color uniformly in a certain area, which is not as The color displayed by the Micro-LED on the wafer shown in the left figure in Figure 11 has the problem of wavelength division binning, so that wavelength division binning can be avoided.
  • a transfer head needs to be available.
  • the available transfer head can be understood as the Micro-LED chip that the transfer head can grab into the aqueous solution.
  • a transfer head before S307, if there is no available transfer head, a transfer head needs to be prepared.
  • no available transfer head can be understood as a Micro-LED chip that no transfer head can grab into the aqueous solution.
  • a transparent layer is prepared on a glass substrate, and a polymer material array layer is prepared on the side of the transparent layer away from the glass substrate.
  • the polymer material array layer includes a plurality of polymer material layers, and adjacent polymer material layers are formed The groove is used to accommodate the Micro-LED chip in the aqueous solution.
  • the bond between the substances in direct contact with the transparent layer can be debonded, that is, the separation of the transparent layer and the substances in direct contact with the transparent layer can be realized.
  • a transparent material may be ablated or bonded to a glass substrate to form a transparent layer.
  • the material of the transparent layer may be triazene, polyimide PI, benzocyclobutene BCB and other materials.
  • the polymer material may be coated on the transparent layer at every preset distance to form a polymer material array layer.
  • the preset distance is the same as or similar to the width of the groove 504 .
  • a polymer material can be coated on the transparent layer, and a plurality of grooves can be lithography or etched on the layer formed by the polymer material, and a polymer material layer is formed between adjacent grooves, and a plurality of grooves are formed.
  • the polymer material layer forms a polymer array.
  • the material of the polymer material layer may be a hydrophobic polymer material, a material composed of silicon dioxide and hexamethyldisilazane HMDS, and the like.
  • the transfer head 500 may be formed by stacking a glass substrate 501 , a transparent layer 502 and a polymer material array layer 503 in sequence.
  • the polymer material array layer 503 includes four polymer material layers, namely a polymer material layer 5031 , a polymer material layer 5032 , a polymer material layer 5033 and a polymer material layer 5044 .
  • the 4 polymer material layers can form 3 grooves, that is, the polymer material layer 5031 and the polymer material layer 5032 form the groove 5041, the polymer material layer 5032 and the polymer material layer 5033 form the groove 5042, and the polymer material layer 5032 and the polymer material layer 5033 form the groove 5042.
  • the material layer 5033 and the polymer material layer 5034 form grooves 5043 .
  • a hydrophilic layer needs to be prepared at the bottom of the groove of the available transfer head.
  • the hydrophilic layer can make the hydrophobic layer of the grabbed Micro-LED chip be accommodated in the groove away from the bottom of the groove when the transfer head grabs the Micro-LED chip in the aqueous solution.
  • the materials of the hydrophilic layer are not limited in the embodiments of the present application.
  • the material of the hydrophilic layer is oxide.
  • the material of the hydrophilic layer is a polymer film.
  • a hydrophilic layer 505 is prepared at the bottom of the groove 504 .
  • a hydrophilic layer 5051 is prepared at the bottom of the groove 5041
  • a hydrophilic layer 5052 is prepared at the bottom of the groove 5042
  • a hydrophilic layer 5053 is prepared at the bottom of the groove 5043.
  • the transfer head can be placed under the Micro-LED chip, and the groove of the transfer head can face the Micro-LED chip in the aqueous solution, and the transfer head can be moved out of the aqueous solution by the pulling method to grab the Micro-LED chip in the aqueous solution. -LED chip.
  • Moving the transfer head out of the aqueous solution may be moving the transfer head out of the aqueous solution in a direction at a first angle to the horizontal.
  • the first angle is greater than 0° and less than 90°.
  • the transfer head 500 may be placed under the Micro-LED chip 410, the Micro-LED chip 430 and/or the Micro-LED chip 440, and the groove 504 of the transfer head 500 may face the Micro-LED chip 410, the Micro-LED chip 430 and/or the Micro-LED chip 440.
  • the transfer head 500 is moved out of the aqueous solution by using the pulling method to grab the Micro-LED chips 410 , the Micro-LED chips 430 and/or the Micro-LED chips 440 in the aqueous solution 405 .
  • the grabbed Micro-LED chip will be accommodated in the In the groove of the transfer head, and in the groove, the hydrophobic layer of the Micro-LED chip is far away from the bottom of the groove, so that the Micro-LED chip in the aqueous solution can be grasped through the transfer head.
  • the rapid assembly of a large-area transfer head can be achieved by using fluid (aqueous solution) self-assembly, that is, the transfer process of the Micro-LED chip from the transfer head to the target substrate is realized by non-contact printing, avoiding the sticking process.
  • fluid aqueous solution
  • CTE coefficient of thermal expansion
  • the transfer head 500 that grabs the Micro-LED chip 410 , the Micro-LED chip 430 and the Micro-LED chip 440 .
  • the transfer head is placed above the target substrate, wherein the hydrophobic layer of the Micro-LED chip on the transfer head faces the target substrate, and the Micro-LED chip faces away from the target substrate; the laser is irradiated from the side of the transfer head away from the target substrate , the laser reaches the transparent layer and can debond the hydrophilic layer in direct contact with the transparent layer, that is, to achieve peeling between the transparent layer and the hydrophilic layer, so that the grasped multiple Micro-LED chips are peeled off the transfer head and It is fixed on the target substrate.
  • the hydrophobic layer of each Micro-LED chip in the plurality of Micro-LED chips is attached to the target substrate.
  • the target substrate 600 may be formed by stacking a driving backplane 602 and an adhesive layer 601 . Multiple Micro-LED chips can be fixed on the target substrate through the adhesive layer.
  • the driving backplane may be a TFT substrate.
  • An adhesive layer is a sticky adhesive material.
  • the material used for the adhesive layer may be anisotropic conductive film (ACF).
  • the transfer head 500 that grabs the Micro-LED chip 410 , the Micro-LED chip 430 and the Micro-LED chip 440 is moved to the top of the target substrate 600 .
  • the hydrophobic layer faces the target substrate 600 , and the Micro-LED chips face away from the target substrate.
  • the adhesive layer 601 of the target substrate 600 is between the transfer head 500 and the driving substrate 602 .
  • the laser is used to partially scan the upper area of the glass substrate 401 corresponding to the Micro-LED chip 410 , the upper area of the glass substrate 401 corresponding to the Micro-LED chip 430 , and the glass substrate 401 corresponding to the Micro-LED chip 440 from the side of the glass substrate 401 In the upper area, the laser will irradiate on the transparent layer 502 through the glass substrate.
  • the Micro-LED chip 410 is accommodated in the groove 5041 of the transfer head 500 through the hydrophilic layer 5051
  • the Micro-LED chip 430 is accommodated in the groove 5041 of the transfer head 500 through the hydrophilic layer 5052
  • the groove 5042 of the transfer head 500 and the Micro-LED chip 440 are accommodated in the groove 5043 of the transfer head 500 through the hydrophilic layer 5053, and since the hydrophilic layer 5051, the hydrophilic layer 5052 and the hydrophilic layer 5053 and the transparent layer 502 are directly Therefore, the laser light irradiated on the transparent layer 502 can dissolve the bonding between the transparent layer 502 and the hydrophilic layer 5051, the hydrophilic layer 5052 and the hydrophilic layer 5053 and the transparent layer 502 respectively, that is, to realize the Micro-LED chip 410,
  • the Micro-LED chip 430 and the Micro-LED chip 440 are peeled off from the transfer head 500 respectively, so that the Micro-LED chip 410 with the hydrophilic layer 5051 , the Micro
  • the LED chip 440 is fixed to the target substrate 600.
  • a Micro-LED chip 410 with a hydrophilic layer 5051 a Micro-LED chip 430 with a hydrophilic layer 5052 , and a Micro-LED chip 440 with a hydrophilic layer 5053 are fixed on the target substrate 600 Schematic diagram of the structure.
  • the hydrophobic layer 4041 of the Micro-LED chip 410 , the hydrophobic layer 4043 of the Micro-LED chip 430 and the hydrophobic layer 4044 of the Micro-LED chip 440 are respectively attached to the target substrate 600 .
  • the above-mentioned laser partial scanning from one side of the glass substrate can firstly determine the contour pattern of the area to be scanned through a corresponding positioning system, and emit laser light in the contour pattern corresponding to the area to be scanned.
  • the hydrophobic layer of the Micro-LED chip and the hydrophilic layer on the Micro-LED chip will volatilize.
  • the electrical connection of each Micro-LED chip can also be realized.
  • a vertical second electrode layer is prepared on the side of each Micro-LED chip away from the target substrate.
  • the electrode of one electrode layer is the N pole
  • the electrode of the other electrode layer is the P pole
  • the first electrode of the first electrode layer is a P electrode
  • the second electrode of the second electrode layer is an N electrode
  • a vertical second electrode layer 603 may be prepared on the side of each Micro-LED chip away from the target substrate 600 based on an evaporation or photolithographic coating process.
  • a vertical second electrode layer 6031 is prepared on the side of the Micro-LED chip 410 away from the target substrate 600
  • a vertical second electrode layer 6032 is prepared on the side of the Micro-LED chip 430 away from the target substrate 600
  • a vertical second electrode layer 6032 is prepared on the side of the Micro-LED chip 430 away from the target
  • a vertical second electrode layer 6033 is prepared on one side of the substrate 600 .
  • Table 1 is a comparison of some performances of the method 300 and existing solutions. As shown in Table 1, by the above method 300, the transfer of 100 million Micro-LED chips per hour can be realized, there is no wavelength binning problem, and a huge amount of repair can be realized. At the same time, by the above method 300, after the Micro-LED chips are transferred from the wafer to the target substrate, the formed display panel can be applied to all electronic devices.
  • the display panel (eg, the schematic diagram shown in FIG. 18 ) prepared by transferring a large amount of Micro-LED chips by the above method 300 can be applied to a Micro-LED display panel.
  • the above-mentioned method 300 can realize the transfer of a large amount of Micro-LED chips with high efficiency and high pass rate, the mass production of Micro-LED panels and the effective cost reduction, and can be adapted to the display module manufacturing process of different electronic devices.
  • the embodiments of the present application also provide a device for transferring Micro-LED chips.
  • the device may perform the method 300 described above.
  • the apparatus may include multiple apparatuses, and the multiple apparatuses cooperate to execute the above-mentioned method 300 .
  • This equipment can be called a set of production line equipment to realize the mass transfer of Micro-LED chips.
  • An embodiment of the present application further provides a device, including one or more processors; one or more memories; the one or more memories stores one or more computer programs, and the one or more computer programs include The instructions, when executed by the one or more processors, cause the apparatus to execute the above-described method 300 for transferring a Micro-LED chip.
  • Embodiments of the present application further provide a storage medium, where a computer program or instruction is stored thereon, and when the computer program or instruction is executed, the computer executes the above Micro-LED chip transfer method 300 .
  • Embodiments of the present application further provide a chip system, including: a processor configured to execute the above Micro-LED chip transfer method 300 .
  • the disclosed system, apparatus and method may be implemented in other manners.
  • the apparatus embodiments described above are only illustrative.
  • the division of the units is only a logical function division. In actual implementation, there may be other division methods.
  • multiple units or components may be combined or Can be integrated into another system, or some features can be ignored, or not implemented.
  • the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, indirect coupling or communication connection of devices or units, and may be in electrical, mechanical or other forms.
  • the units described as separate components may or may not be physically separated, and components displayed as units may or may not be physical units, that is, may be located in one place, or may be distributed to multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution in this embodiment.
  • each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.
  • the functions, if implemented in the form of software functional units and sold or used as independent products, may be stored in a computer-readable storage medium.
  • the technical solution of the present application can be embodied in the form of a software product in essence, or the part that contributes to the prior art or the part of the technical solution, and the computer software product is stored in a storage medium, including Several instructions are used to cause a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present application.
  • the aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (Read-Only Memory, ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk and other media that can store program codes .

Abstract

Embodiments of the present application provide a method for transferring a Micro-LED chip, a wafer, and a transfer head for grabbing a chip. The Micro-LED chip is provided with a hydrophobic layer. The method comprises: placing multiple Micro-LED chips provided with hydrophobic layers in an aqueous solution; grabbing the multiple Micro-LED chips in the aqueous solution by means of the transfer head, the transfer head comprising multiple grooves used for accommodating the Micro-LED chips, and hydrophilic layers being disposed at the bottom of the grooves so that the hydrophobic layers of the grabbed Micro-LED chips are away from the bottom of the grooves; and fixing the grabbed multiple Micro-LED chips on a target substrate, the hydrophobic layers of the Micro-LED chips being attached to the target substrate. By means of a fluidic self-assembly method, high-efficiency transfer of a large number of Micro-LED chips can be implemented.

Description

芯片的转移方法、晶圆以及用于抓取芯片的转移头Chip transfer method, wafer, and transfer head for picking up chips
本申请要求于2021年1月15日提交中国专利局、申请号为202110053476.1、申请名称为“芯片的转移方法、晶圆以及用于抓取芯片的转移头”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application filed on January 15, 2021 with the application number of 202110053476.1 and the application title of "Chip Transfer Method, Wafer, and Transfer Head for Grabbing Chips", which The entire contents of this application are incorporated by reference.
技术领域technical field
本申请涉及显示技术领域，更具体地，涉及一种Micro-LED芯片的转移方法以及装置。The present application relates to the field of display technology, and more particularly, to a method and device for transferring Micro-LED chips.
背景技术Background technique
在现有的显示面板中，由于微型发光二极管Micro-LED显示面板的色域、对比度、亮度、效率、可靠性和寿命等性能都比较好。因此，Micro-LED显示面板被认为是下一代显示面板。Among the existing display panels, the performance of the Micro-LED display panel is relatively good in terms of color gamut, contrast ratio, brightness, efficiency, reliability and lifespan. Therefore, the Micro-LED display panel is considered to be the next generation display panel.
在Micro-LED显示面板生产制备中，由于驱动Micro-LED芯片的驱动背板和Micro-LED在不同的基底上制备，因此，需要将Micro-LED芯片组装到驱动背板上。例如，可以采用弹性印模拾取转移技术等巨量转移技术，将巨量的Micro-LED芯片组装到驱动背板上。但是，在通过该弹性印模拾取转移技术实现Micro-LED转移的过程中，转移头分别和Micro-LED芯片、驱动基板均直接接触，受到转移头的材料与驱动背板材料的热膨胀系数不同的因素，会使得Micro-LED芯片的转移效率受到Micro-LED芯片的像素密度和转移头面积的限制，造成生产效率低，成本较高。In the production and preparation of the Micro-LED display panel, since the driving backplane for driving the Micro-LED chip and the Micro-LED are prepared on different substrates, the Micro-LED chip needs to be assembled on the driving backplane. For example, mass transfer technologies such as elastic stamp pick-up transfer technology can be used to assemble a mass of Micro-LED chips onto the driver backplane. However, in the process of realizing Micro-LED transfer through the elastic stamp pick-up transfer technology, the transfer head is in direct contact with the Micro-LED chip and the driving substrate, respectively, and the material of the transfer head and the material of the driving backplane have different thermal expansion coefficients. The transfer efficiency of the Micro-LED chip is limited by the pixel density of the Micro-LED chip and the area of the transfer head, resulting in low production efficiency and high cost.
发明内容SUMMARY OF THE INVENTION
本申请提供一种Micro-LED芯片的转移方法、晶圆以及用于抓取芯片的转移头，所述转移方法可以实现高效率的巨量Micro-LED芯片的转移。The present application provides a transfer method for Micro-LED chips, a wafer, and a transfer head for grabbing chips, and the transfer method can realize the transfer of a large number of Micro-LED chips with high efficiency.
第一方面，提供了一种Micro-LED芯片的转移方法，所述Micro-LED芯片上具有疏水层，所述方法包括：将多个具有所述疏水层的所述Micro-LED芯片放置于水溶液中；通过转移头抓取所述水溶液中的多个所述Micro-LED芯片，所述转移头包括多个凹槽，所述凹槽用于容纳所述Micro-LED芯片，所述凹槽的底部设置有亲水层，以使抓取的所述Micro-LED芯片的所述疏水层远离所述凹槽的底部；将抓取的多个所述Micro-LED芯片固定至目标基板上，所述Micro-LED芯片的所述疏水层贴合所述目标基板。In a first aspect, a method for transferring a Micro-LED chip is provided, the Micro-LED chip has a hydrophobic layer, the method comprising: placing a plurality of the Micro-LED chips with the hydrophobic layer in an aqueous solution middle; grab a plurality of the Micro-LED chips in the aqueous solution by a transfer head, the transfer head includes a plurality of grooves, the grooves are used for accommodating the Micro-LED chips, and the grooves are The bottom is provided with a hydrophilic layer, so that the hydrophobic layer of the grabbed Micro-LED chips is far away from the bottom of the groove; the grabbed multiple Micro-LED chips are fixed on the target substrate, so that the The hydrophobic layer of the Micro-LED chip is attached to the target substrate.
在上述Micro-LED芯片的转移方法中，由于Micro-LED芯片上的疏水层的存在、转移头的凹槽的存在和转移头的凹槽的亲水层的存在，转移头可以将水溶液中的多个Micro-LED芯片抓取到转移头的凹槽中，从而可以通过水溶液实现Micro-LED芯片和转移头的自组装，进而实现大面积转移头和Micro-LED芯片的快速装配，提高了Micro-LED芯片的转移效率。In the above Micro-LED chip transfer method, due to the existence of the hydrophobic layer on the Micro-LED chip, the existence of the groove of the transfer head and the existence of the hydrophilic layer of the groove of the transfer head, the transfer head can transfer the water in the aqueous solution. Multiple Micro-LED chips are grabbed into the grooves of the transfer head, so that the self-assembly of the Micro-LED chips and the transfer head can be realized by the aqueous solution, thereby realizing the rapid assembly of the large-area transfer head and the Micro-LED chip, and improving the Micro-LED chip. - Transfer efficiency of LED chips.
结合第一方面，在第一方面的某些实现方式中，在所述将多个具有所述疏水层的所述 Micro-LED芯片放置于水溶液中之前，所述方法还包括：在晶圆上制备多个所述Micro-LED芯片；在所述Micro-LED芯片远离所述晶圆的一侧制备所述疏水层；将多个所述Micro-LED芯片和所述晶圆之间剥离。With reference to the first aspect, in some implementations of the first aspect, before the placing the plurality of the Micro-LED chips with the hydrophobic layer in the aqueous solution, the method further includes: on the wafer preparing a plurality of the Micro-LED chips; preparing the hydrophobic layer on the side of the Micro-LED chips away from the wafer; peeling off the plurality of the Micro-LED chips and the wafer.
示例性的，在晶圆上外延刻蚀多个垂直的Micro-LED芯片。Exemplarily, a plurality of vertical Micro-LED chips are epitaxially etched on a wafer.
结合第一方面，在第一方面的某些实现方式中，所述将多个所述Micro-LED芯片和所述晶圆之间剥离包括：从所述晶圆远离所述Micro-LED芯片的一侧照射激光，以使多个所述Micro-LED芯片和所述晶圆之间剥离。With reference to the first aspect, in some implementations of the first aspect, the peeling between the plurality of Micro-LED chips and the wafer includes: moving away from the Micro-LED chips from the wafer A laser is irradiated on one side to peel off the plurality of Micro-LED chips and the wafer.
结合第一方面，在第一方面的某些实现方式中，在所述将多个所述Micro-LED芯片和所述晶圆之间剥离之前，所述方法还包括：对多个所述Micro-LED芯片中的每个Micro-LED芯片进行坏点检测，以获得坏点Micro-LED芯片；所述将多个所述Micro-LED芯片和所述晶圆之间剥离包括：根据所述坏点Micro-LED芯片，将多个所述Micro-LED芯片中除所述坏点Micro-LED芯片之外的Micro-LED芯片和所述晶圆之间剥离。With reference to the first aspect, in some implementations of the first aspect, before the peeling between the plurality of the Micro-LED chips and the wafer, the method further includes: -Dead-dot detection is performed on each Micro-LED chip in the LED chips to obtain a dead-dot Micro-LED chip; the peeling between the plurality of Micro-LED chips and the wafer includes: according to the bad pixel Pointing the Micro-LED chips, and peeling off the Micro-LED chips other than the defective Micro-LED chips among the plurality of Micro-LED chips and the wafer.
其中，坏点Micro-LED芯片可以理解为该Micro-LED芯片在通电的情况下不亮。和/或，该Micro-LED芯片在通电的情况下，该Micro-LED芯片的亮度和/或该Micro-LED芯片发出的光线的波长不满足需求规格。Among them, the dead-dot Micro-LED chip can be understood as the Micro-LED chip does not light up when it is powered on. And/or, when the Micro-LED chip is powered on, the brightness of the Micro-LED chip and/or the wavelength of the light emitted by the Micro-LED chip do not meet the required specifications.
对多个Micro-LED芯片中的每个Micro-LED芯片进行坏点检测，以获得坏点Micro-LED芯片，并将多个Micro-LED芯片中除坏点Micro-LED芯片之外的Micro-LED芯片和晶圆之间剥离，从而可以只对晶圆上的良品Micro-LED芯片进行转移，从而可以得到合格率较高的Micro-LED芯片。Perform dead pixel detection on each Micro-LED chip in the multiple Micro-LED chips to obtain the defective Micro-LED The LED chips are peeled off from the wafer, so that only the good Micro-LED chips on the wafer can be transferred, so that the Micro-LED chips with a high pass rate can be obtained.
结合第一方面，在第一方面的某些实现方式中，所述根据所述坏点Micro-LED芯片，将多个所述Micro-LED芯片中除所述坏点Micro-LED芯片之外的Micro-LED芯片和所述晶圆之间剥离包括：根据所述坏点Micro-LED芯片，确定待照射区域，所述待照射区域为所述晶圆上除所述坏点Micro-LED芯片所占区域之外的区域；在所述待照射区域内，从所述晶圆远离所述Micro-LED芯片的一侧照射激光，以使多个所述Micro-LED芯片中除所述坏点Micro-LED芯片之外的Micro-LED芯片和所述晶圆之间剥离。With reference to the first aspect, in some implementations of the first aspect, according to the dead-dot Micro-LED chips, the plurality of Micro-LED chips except the dead-dot Micro-LED chips are The peeling between the Micro-LED chip and the wafer includes: determining a to-be-irradiated area according to the dead-dot Micro-LED chip, where the to-be-irradiated area is where the dead-dot Micro-LED chip is removed from the wafer. In the area to be irradiated, the laser is irradiated from the side of the wafer away from the Micro-LED chip, so that the defective Micro-LED chips are removed from the Micro-LED chips. - Peeling between Micro-LED chips other than LED chips and the wafer.
结合第一方面，在第一方面的某些实现方式中，在所述将多个所述Micro-LED芯片和所述晶圆之间剥离之前，所述方法还包括：将所述晶圆放置在所述水溶液的上方，以使在所述将多个所述Micro-LED芯片和所述晶圆之间剥离之后，所述多个具有所述疏水层的所述Micro-LED芯片放置于水溶液中，其中，所述疏水层朝向所述水溶液，且所述晶圆背离所述水溶液。With reference to the first aspect, in some implementations of the first aspect, before the peeling between the plurality of the Micro-LED chips and the wafer, the method further includes: placing the wafer on above the aqueous solution, so that after the peeling between the plurality of the Micro-LED chips and the wafer, the plurality of the Micro-LED chips with the hydrophobic layer are placed in the aqueous solution wherein the hydrophobic layer faces the aqueous solution and the wafer faces away from the aqueous solution.
其中，晶圆放置在水溶液的上方可以理解为晶圆在水溶液的正上方或斜上方等。Where the wafer is placed above the aqueous solution, it can be understood that the wafer is directly above or obliquely above the aqueous solution, or the like.
此外，晶圆和水溶液之间的夹角在0°～90°之间。In addition, the angle between the wafer and the aqueous solution is between 0° and 90°.
其中，在良品Micro-LED芯片剥离晶圆落入水溶液后，多个良品Micro-LED芯片会密排于水溶液中。Among them, after the good-quality Micro-LED chips are peeled off the wafer and fall into the aqueous solution, a plurality of good-quality Micro-LED chips will be densely packed in the aqueous solution.
结合第一方面，在第一方面的某些实现方式中，在所述通过转移头抓取所述水溶液中的多个所述Micro-LED芯片之前，所述方法还包括：对所述水溶液中的多个所述Micro-LED芯片进行搅拌。With reference to the first aspect, in some implementations of the first aspect, before the grabbing of the plurality of Micro-LED chips in the aqueous solution by the transfer head, the method further includes: applying the transfer head to the aqueous solution. A plurality of the Micro-LED chips are stirred.
在一些实施例中，将水溶液中的多个良品Micro-LED芯片搅拌固定时长。In some embodiments, the plurality of good-quality Micro-LED chips in the aqueous solution are stirred for a fixed period of time.
通过将水溶液中的多个良品Micro-LED芯片进行搅拌，以使得该多个良品Micro-LED 芯片整体显示出来的颜色尽可能的没有色差，这样可以避免波长分bin。By stirring a plurality of good Micro-LED chips in the aqueous solution, the colors displayed by the plurality of good Micro-LED chips as a whole have no chromatic aberration as much as possible, so as to avoid wavelength binning.
结合第一方面，在第一方面的某些实现方式中，所述通过转移头抓取所述水溶液中的多个所述Micro-LED芯片包括：将所述转移头放置在多个所述Micro-LED芯片的下方，所述转移头的所述凹槽朝向所述Micro-LED芯片；将所述转移头移出所述水溶液，以抓取多个所述Micro-LED芯片。With reference to the first aspect, in some implementations of the first aspect, the grabbing a plurality of the Micro-LED chips in the aqueous solution by a transfer head includes: placing the transfer head on a plurality of the Micro-LED chips - Below the LED chip, the groove of the transfer head faces the Micro-LED chip; the transfer head is moved out of the aqueous solution to grab a plurality of the Micro-LED chips.
其中，将转移头移出水溶液可以是将转移头沿与水平面成第一角度的方向，移出水溶液。其中，第一角度大于0°且小于90°。Wherein, moving the transfer head out of the aqueous solution may be moving the transfer head out of the aqueous solution along a direction that forms a first angle with the horizontal plane. Wherein, the first angle is greater than 0° and less than 90°.
在一些实施例中，在所述通过转移头抓取所述水溶液中的多个所述Micro-LED芯片之前，所述方法还包括：制备所述转移头。In some embodiments, before the grabbing of the plurality of Micro-LED chips in the aqueous solution by the transfer head, the method further comprises: preparing the transfer head.
在一种可实现的方式中，所述制备转移头包括：在玻璃基板上制备透明层；在所述透明层远离所述玻璃基板的一侧制备高分子材料阵列层，所述高分子材料阵列层包括多个高分子材料层，相邻的所述高分子材料层形成所述凹槽。In an achievable manner, the preparation of the transfer head includes: preparing a transparent layer on a glass substrate; preparing a polymer material array layer on the side of the transparent layer away from the glass substrate, the polymer material array The layer includes a plurality of polymer material layers, and the adjacent polymer material layers form the grooves.
结合第一方面，在第一方面的某些实现方式中，所述将抓取的多个所述Micro-LED芯片固定至目标基板上包括：将所述转移头放置在所述目标基板的上方，其中，所述Micro-LED芯片的所述疏水层朝向所述目标基板，且所述Micro-LED芯片背离所述目标基板；从所述转移头远离所述目标基板的一侧照射激光，所述转移头和所述亲水层之间剥离，以使抓取的多个所述Micro-LED芯片剥离所述转移头并固定至所述目标基板上。With reference to the first aspect, in some implementations of the first aspect, the fixing the grabbed plurality of the Micro-LED chips on the target substrate includes: placing the transfer head above the target substrate , wherein the hydrophobic layer of the Micro-LED chip faces the target substrate, and the Micro-LED chip faces away from the target substrate; the laser is irradiated from the side of the transfer head away from the target substrate, so that the The transfer head and the hydrophilic layer are peeled off, so that the grabbed multiple Micro-LED chips are peeled off the transfer head and fixed on the target substrate.
结合第一方面，在第一方面的某些实现方式中，所述目标基板包括堆叠设置的粘层和驱动背板，所述粘层用于将多个所述Micro-LED芯片固定至目标基板上。With reference to the first aspect, in some implementations of the first aspect, the target substrate includes a stacked adhesive layer and a driving backplane, the adhesive layer is used to fix a plurality of the Micro-LED chips to the target substrate superior.
结合第一方面，在第一方面的某些实现方式中，在所述将抓取的多个所述Micro-LED芯片固定至目标基板上之后，所述方法还包括：对所述目标基板加热，去除所述Micro-LED芯片的疏水层。With reference to the first aspect, in some implementations of the first aspect, after the grabbing of the plurality of Micro-LED chips is fixed on the target substrate, the method further includes: heating the target substrate , remove the hydrophobic layer of the Micro-LED chip.
结合第一方面，在第一方面的某些实现方式中，所述Micro-LED芯片上还具有第一电极层，所述第一电极层设置在所述Micro-LED芯片和所述疏水层之间。In combination with the first aspect, in some implementations of the first aspect, the Micro-LED chip further has a first electrode layer, and the first electrode layer is disposed between the Micro-LED chip and the hydrophobic layer between.
示例性的，可以在每个Micro-LED芯片远离晶圆的一侧蒸镀第一电极，以形成第一电极层。Exemplarily, a first electrode may be evaporated on a side of each Micro-LED chip away from the wafer to form a first electrode layer.
在一些实施例中，第一电极层的第一电极是P极。In some embodiments, the first electrode of the first electrode layer is a P electrode.
结合第一方面，在第一方面的某些实现方式中，在所述将抓取的多个所述Micro-LED芯片固定至目标基板上之后，所述方法还包括：在所述Micro-LED芯片远离所述目标基板的一侧制备第二电极层。With reference to the first aspect, in some implementations of the first aspect, after the grabbing of the plurality of Micro-LED chips is fixed on the target substrate, the method further includes: placing the Micro-LED chips on the target substrate. A second electrode layer is prepared on the side of the chip away from the target substrate.
在一些实施例中，第二电极层的第二电极是N极。In some embodiments, the second electrode of the second electrode layer is an N-pole.
结合第一方面，在第一方面的某些实现方式中，所述转移头还包括：玻璃基板；设置在所述玻璃基板上的透明层；设置在所述透明层远离所述玻璃基板的一侧的高分子材料阵列层，所述高分子材料阵列层包括多个高分子材料层，相邻的高分子材料层之间形成所述凹槽；在所述转移头远离所述Micro-LED芯片的一侧被激光照射的情况下，所述透明层和所述亲水层之间剥离，以使抓取的多个所述Micro-LED芯片剥离所述转移头并固定至所述目标基板上。With reference to the first aspect, in some implementations of the first aspect, the transfer head further includes: a glass substrate; a transparent layer disposed on the glass substrate; a transparent layer disposed on the transparent layer away from the glass substrate The polymer material array layer on the side, the polymer material array layer includes a plurality of polymer material layers, and the groove is formed between the adjacent polymer material layers; the transfer head is far away from the Micro-LED chip When one side of the device is irradiated by laser, the transparent layer and the hydrophilic layer are peeled off, so that the grabbed Micro-LED chips are peeled off the transfer head and fixed on the target substrate .
示例性的，透明层的材料可以是三氮烯、聚酰亚胺PI、苯并环丁烯BCB等材料。Exemplarily, the material of the transparent layer may be triazene, polyimide PI, benzocyclobutene BCB and other materials.
示例性的，高分子材料层的材料可以是疏水高分子材料、二氧化硅与六甲基二硅氮烷 HMDS组成的材料等。Exemplarily, the material of the polymer material layer may be a hydrophobic polymer material, a material composed of silicon dioxide and hexamethyldisilazane HMDS, and the like.
结合第一方面，在第一方面的某些实现方式中，所述疏水层的材料为自组装薄膜SAM。In combination with the first aspect, in some implementations of the first aspect, the material of the hydrophobic layer is a self-assembled thin film SAM.
第二方面，提供了一种晶圆，所述晶圆包括微型发光二极管Micro-LED芯片，所述Micro-LED芯片上远离所述晶圆的一侧具有疏水层。In a second aspect, a wafer is provided, the wafer includes a micro light-emitting diode Micro-LED chip, and a side of the Micro-LED chip away from the wafer has a hydrophobic layer.
在Micro-LED芯片上远离晶圆的一侧设置疏水层，以便后续可以通过水溶液实现Micro-LED芯片和转移头的自组装。A hydrophobic layer is arranged on the side of the Micro-LED chip away from the wafer, so that the self-assembly of the Micro-LED chip and the transfer head can be realized by an aqueous solution later.
结合第二方面，在第二方面的某些实现方式中，在所述晶圆远离所述Micro-LED芯片的一侧被激光照射的情况下，所述Micro-LED芯片和所述晶圆之间剥离。In combination with the second aspect, in some implementations of the second aspect, when the side of the wafer away from the Micro-LED chip is irradiated by laser light, the relationship between the Micro-LED chip and the wafer is irradiated by laser light. peel off.
结合第二方面，在第二方面的某些实现方式中，所述Micro-LED芯片上还具有第一电极层，所述第一电极层设置在所述Micro-LED芯片和所述疏水层之间。In combination with the second aspect, in some implementations of the second aspect, the Micro-LED chip further has a first electrode layer, and the first electrode layer is disposed between the Micro-LED chip and the hydrophobic layer between.
结合第二方面，在第二方面的某些实现方式中，所述疏水层的材料为自组装薄膜SAM。In combination with the second aspect, in some implementations of the second aspect, the material of the hydrophobic layer is a self-assembled thin film SAM.
第三方面，提供了一种用于抓取微型发光二极管Micro-LED芯片的转移头，所述Micro-LED芯片上具有疏水层，所述转移头包括：凹槽，所述凹槽用于容纳所述Micro-LED芯片，所述凹槽的底部设置有亲水层，以使抓取的所述Micro-LED芯片的所述疏水层远离所述凹槽的底部。In a third aspect, there is provided a transfer head for grasping a micro light-emitting diode Micro-LED chip, the Micro-LED chip has a hydrophobic layer, and the transfer head includes: a groove, and the groove is used for accommodating In the Micro-LED chip, the bottom of the groove is provided with a hydrophilic layer, so that the hydrophobic layer of the Micro-LED chip that is grasped is far away from the bottom of the groove.
由于转移头的凹槽的存在和转移头的凹槽的亲水层的存在，转移头可以将水溶液中的多个Micro-LED芯片抓取到转移头的凹槽中，从而可以通过水溶液实现Micro-LED芯片和转移头的自组装，进而实现大面积转移头和Micro-LED芯片的快速装配，提高了Micro-LED芯片的转移效率。Due to the existence of the grooves of the transfer head and the existence of the hydrophilic layer of the grooves of the transfer head, the transfer head can grab multiple Micro-LED chips in the aqueous solution into the grooves of the transfer head, so that Micro-LED chips can be realized by the aqueous solution. -Self-assembly of the LED chip and the transfer head, thereby realizing the rapid assembly of the large-area transfer head and the Micro-LED chip, and improving the transfer efficiency of the Micro-LED chip.
结合第三方面，在第三方面的某些实现方式中，所述转移头还包括：玻璃基板；设置在所述玻璃基板上的透明层；设置在所述透明层远离所述玻璃基板的一侧的高分子材料阵列层，所述高分子材料阵列层包括多个高分子材料层，相邻的高分子材料层之间形成所述凹槽。With reference to the third aspect, in some implementations of the third aspect, the transfer head further includes: a glass substrate; a transparent layer disposed on the glass substrate; a transparent layer disposed on the transparent layer away from the glass substrate The polymer material array layer on the side, the polymer material array layer includes a plurality of polymer material layers, and the grooves are formed between adjacent polymer material layers.
结合第三方面，在第三方面的某些实现方式中，在所述转移头远离所述凹槽的一侧被激光照射的情况下，所述透明层和所述亲水层之间剥离，以使抓取的多个所述Micro-LED芯片剥离所述转移头。With reference to the third aspect, in some implementations of the third aspect, when the side of the transfer head away from the groove is irradiated with laser light, the transparent layer and the hydrophilic layer are peeled off, so as to peel off the transfer head from the grabbed multiple Micro-LED chips.
第四方面，提供了一种装置，所述装置具有实现上述第一方面以及第一方面的某些实现方式中的任意一种实现方式的功能。功能可以通过硬件实现，也可以通过硬件执行相应的软件实现。硬件或软件包括一个或多个与上述功能相对应的模块或单元。In a fourth aspect, an apparatus is provided, and the apparatus has the function of implementing any one of the above-mentioned first aspect and certain implementation manners of the first aspect. The functions can be implemented by hardware, or by executing corresponding software by hardware. The hardware or software includes one or more modules or units corresponding to the above functions.
第五方面，提供了一种设备，包括一个或多个处理器；一个或多个存储器；所述一个或多个存储器存储有一个或者多个计算机程序，所述一个或者多个计算机程序包括指令，当所述指令被所述一个或多个处理器执行时，使得所述设备执行上述第一方面以及第一方面的某些实现方式中的任一实现方式中的Micro-LED芯片的转移方法。In a fifth aspect, an apparatus is provided, comprising one or more processors; one or more memories; the one or more memories stores one or more computer programs, the one or more computer programs comprising instructions , when the instruction is executed by the one or more processors, causing the device to execute the method for transferring a Micro-LED chip in any one of the first aspect and some implementations of the first aspect .
第六方面，提供了一种存储介质，所述存储介质上存储有计算机程序或指令，所述计算机程序或指令被执行时使得计算机执行上述第一方面以及第一方面的某些实现方式中的任一实现方式中的Micro-LED芯片的转移方法。In a sixth aspect, a storage medium is provided, and a computer program or instruction is stored on the storage medium, and when the computer program or instruction is executed, the computer executes the above-mentioned first aspect and some implementations of the first aspect. The transfer method of the Micro-LED chip in any implementation manner.
第七方面，提供了一种芯片***，包括：处理器，用于执行上述第一方面以及第一方 面的某些实现方式中的任一实现方式中的Micro-LED芯片的转移方法。In a seventh aspect, a chip system is provided, comprising: a processor configured to execute the method for transferring a Micro-LED chip in any one of the above-mentioned first aspect and some implementations of the first aspect.
附图说明Description of drawings
图1为不同显示面板的多个性能的示意雷达图。Figure 1 is a schematic radar chart of various properties of different display panels.
图2和图3为一例Micro-LED芯片巨量转移技术的示意图。FIG. 2 and FIG. 3 are schematic diagrams of an example of Micro-LED chip mass transfer technology.
图4为另一例Micro-LED芯片巨量转移技术的示意图。FIG. 4 is a schematic diagram of another example of Micro-LED chip mass transfer technology.
图5为本申请实施例提供的一例Micro-LED芯片巨量转移方法的示意流程图。FIG. 5 is a schematic flowchart of an example of a method for mass transfer of Micro-LED chips according to an embodiment of the present application.
图6至图10为本申请实施例提供的将Micro-LED芯片从晶圆上进行转移的示意图。6 to 10 are schematic diagrams of transferring a Micro-LED chip from a wafer according to an embodiment of the present application.
图11为本申请实施例提供的一例Micro-LED芯片中的坏点及波长一致性分Bin示意图。FIG. 11 is a schematic diagram of binning of dead pixels and wavelength consistency in an example of a Micro-LED chip provided by an embodiment of the present application.
图12为本申请实施例提供的一例转移头的结构示意图。FIG. 12 is a schematic structural diagram of an example of a transfer head provided by an embodiment of the present application.
图13和图14为本申请实施例提供的转移头将巨量Micro-LED芯片进行转移的示意图。FIG. 13 and FIG. 14 are schematic diagrams of transferring a huge amount of Micro-LED chips by the transfer head provided by the embodiment of the application.
图15为本申请实施例提供的一例目标基板的结构示意图。FIG. 15 is a schematic structural diagram of an example of a target substrate provided by an embodiment of the present application.
图16至图18为本申请实施例提供的一例将Micro-LED芯片转移至目标基板的示意图。16 to 18 are schematic diagrams illustrating an example of transferring a Micro-LED chip to a target substrate according to an embodiment of the present application.
具体实施方式Detailed ways
下面将结合附图，对本申请中的技术方案进行描述。The technical solutions in the present application will be described below with reference to the accompanying drawings.
下面将结合本申请以下实施例中的附图，对本申请实施例中的技术方案进行详尽描述。The technical solutions in the embodiments of the present application will be described in detail below with reference to the accompanying drawings in the following embodiments of the present application.
本申请实施例涉及的“宽度”、“上”、“下”、“水平”、“底部”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本实用新型的限制。The orientations or positional relationships indicated by "width", "upper", "lower", "horizontal", "bottom", etc. involved in the embodiments of the present application are based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present application. The description is applied and simplified rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as limiting the invention.
本申请实施例涉及的至少一个，包括一个或者多个；其中，多个是指大于或者等于两个。另外，需要理解的是，在本申请的描述中，“第一”、“第二”等词汇，仅用于区分描述的目的，而不能理解为指示或暗示相对重要性，也不能理解为指示或暗示顺序。At least one involved in the embodiments of the present application includes one or more; wherein, multiple refers to greater than or equal to two. In addition, it should be understood that in the description of this application, words such as "first" and "second" are only used for the purpose of distinguishing the description, and should not be understood as indicating or implying relative importance, nor should it be understood as indicating or implied order.
以下实施例中所使用的术语只是为了描述特定实施例的目的，而并非旨在作为对本申请的限制。如在本申请的说明书和所附权利要求书中所使用的那样，单数表达形式“一个”、“一种”、“所述”、“上述”、“该”和“这一”旨在也包括例如“一个或多个”这种表达形式，除非其上下文中明确地有相反指示。还应当理解，在本申请实施例中，“一个或多个”是指一个、两个或两个以上；“和/或”，描述关联对象的关联关系，表示可以存在三种关系；例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B的情况，其中A、B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。The terms used in the following embodiments are for the purpose of describing particular embodiments only, and are not intended to be limitations of the present application. As used in the specification of this application and the appended claims, the singular expressions "a," "an," "the," "above," "the," and "the" are intended to also Expressions such as "one or more" are included unless the context clearly dictates otherwise. It should also be understood that, in this embodiment of the present application, "one or more" refers to one, two or more; "and/or", which describes the association relationship of associated objects, indicates that there may be three kinds of relationships; for example, A and/or B can mean that A exists alone, A and B exist simultaneously, and B exists independently, wherein A and B can be singular or plural. The character "/" generally indicates that the associated objects are an "or" relationship.
在本申请实施例中描述的参考“一个实施例”或“一些实施例”等意味着在本申请的一个或多个实施例中包括结合该实施例描述的特定特征、结构或特点。由此，在本说明书中的不同之处出现的语句“在一个实施例中”、“在一些实施例中”、“在其他一些实施 例中”、“在另外一些实施例中”等不是必然都参考相同的实施例，而是意味着“一个或多个但不是所有的实施例”，除非是以其他方式另外特别强调。术语“包括”、“包含”、“具有”及它们的变形都意味着“包括但不限于”，除非是以其他方式另外特别强调。References to "one embodiment" or "some embodiments" or the like described in the embodiments of the present application mean that a particular feature, structure or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in other embodiments," etc. in various places in this specification are not necessarily All refer to the same embodiment, but mean "one or more but not all embodiments" unless specifically emphasized otherwise. The terms "including", "including", "having" and their variants mean "including but not limited to" unless specifically emphasized otherwise.
通过本申请实施例提供的方法制备的显示面板可以应用于电子设备，该电子设备可以包括手机、平板电脑、可穿戴设备、电视、车载设备、增强现实(augmented reality，AR)/虚拟现实(virtual reality，VR)设备、笔记本电脑、超级移动个人计算机(ultra-mobile personal computer，UMPC)、上网本、个人数字助理(personal digital assistant，PDA)等电子设备上，本申请实施例对电子设备的具体类型不作任何限制。该电子设备的示例性实施例包括但不限于搭载
Figure PCTCN2021137438-appb-000001
或者其它操作***的便携式电子设备。 The display panel prepared by the method provided in the embodiments of the present application can be applied to electronic devices, and the electronic devices can include mobile phones, tablet computers, wearable devices, TVs, in-vehicle devices, augmented reality (AR)/virtual reality (virtual reality) reality, VR) devices, notebook computers, ultra-mobile personal computers (ultra-mobile personal computers, UMPCs), netbooks, personal digital assistants (personal digital assistants, PDAs) and other electronic devices, the embodiments of the present application describe the specific types of electronic devices No restrictions apply. Exemplary embodiments of the electronic device include, but are not limited to, onboard
Figure PCTCN2021137438-appb-000001
Or portable electronic devices with other operating systems.
显示面板可以采用液晶显示屏(liquid crystal display，LCD)，有机发光二极管(organic light-emitting diode，OLED)，有源矩阵有机发光二极体或主动矩阵有机发光二极体(active-matrix organic light emitting diode，AMOLED)，柔性发光二极管(flex light-emitting diode，FLED)，Mini-LED，Micro-LED，Micro-OLED，量子点发光二极管(quantum dot light emitting diodes，QLED)等。The display panel can be a liquid crystal display (LCD), an organic light-emitting diode (OLED), an active-matrix organic light-emitting diode or an active-matrix organic light-emitting diode (active-matrix organic light). emitting diode, AMOLED), flexible light-emitting diode (flex light-emitting diode, FLED), Mini-LED, Micro-LED, Micro-OLED, quantum dot light-emitting diode (quantum dot light emitting diodes, QLED), etc.
例如，图1为不同显示面板的多个性能的示意雷达图。如图1所示，在LCD显示面板、OLED显示面板、Micro-LED显示面板和QLED显示面板中，色域、对比度、亮度、效率、可靠性和寿命性能都比较好的是Micro-LED显示面板。因此，Micro-LED显示面板被认为是下一代显示面板。For example, Figure 1 is a schematic radar chart of various properties of different display panels. As shown in Figure 1, among LCD display panels, OLED display panels, Micro-LED display panels and QLED display panels, the Micro-LED display panel has the best color gamut, contrast, brightness, efficiency, reliability and life performance. . Therefore, the Micro-LED display panel is considered to be the next generation display panel.
在Micro-LED芯片生产制备中，由于驱动Micro-LED芯片的驱动背板和Micro-LED芯片在不同的基底上制备，因此，需要将Micro-LED芯片组装到驱动背板上。例如，可以采用巨量转移技术，将巨量的Micro-LED芯片组装到驱动背板上。其中，巨量用以表示数量巨多。In the production and preparation of Micro-LED chips, since the driving backplane for driving the Micro-LED chips and the Micro-LED chips are prepared on different substrates, it is necessary to assemble the Micro-LED chips on the driving backplane. For example, mass transfer technology can be used to assemble a mass of Micro-LED chips onto a driver backplane. Among them, huge amount is used to indicate a huge amount.
例如，可以基于范德华力的巨量转移技术，将巨量的Micro-LED芯片组装到驱动背板上的示意图。For example, a schematic diagram of assembling a huge amount of Micro-LED chips onto a driver backplane based on the van der Waals force mass transfer technology.
已有技术中，巨量转移技术包括弹性印模拾取转移(stamp pick and place)技术和激光分束阵列技术。In the prior art, mass transfer technology includes elastic stamp pick and place technology and laser beam splitting array technology.
例如，图2为基于弹性印模拾取转移技术，将巨量的Micro-LED芯片组装到驱动背板上的示意图。弹性印模拾取转移技术是先使用弹性印模结合高精度运动控制转移头，利用范德华力或高分子粘附力将外延生长的Micro-LED 101、Micro-LED 102和Micro-LED 103分别从各自的晶圆上取走，粘附在该转移头上。For example, FIG. 2 is a schematic diagram of assembling a huge number of Micro-LED chips on a driving backplane based on the elastic stamp pick-up and transfer technology. The elastic stamp pick-up transfer technology is to first use the elastic stamp combined with the high-precision motion control transfer head, and use the van der Waals force or the polymer adhesion force to separate the epitaxially grown Micro-LED 101, Micro-LED 102 and Micro-LED 103 from their respective removed from the wafer and adhered to the transfer head.
例如，图3为转移头将巨量的Micro-LED芯片组装到驱动背板上的示意图。如图3所示，转移头140再将Micro-LED阵列110放置到驱动背板120上，就形成显示面板130。其中，驱动背板120可以为薄膜晶体管(thin film transistor，TFT)。For example, FIG. 3 is a schematic diagram of a transfer head assembling a huge number of Micro-LED chips on a driving backplane. As shown in FIG. 3 , the transfer head 140 then places the Micro-LED array 110 on the driving backplane 120 to form the display panel 130 . Wherein, the driving backplane 120 may be a thin film transistor (thin film transistor, TFT).
通过该弹性印模拾取转移技术实现Micro-LED转移的过程中，转移头分别和Micro-LED芯片、驱动基板均直接接触，受到转移头的材料与驱动背板材料的热膨胀系数不同的因素，会使得Micro-LED芯片的转移效率受到Micro-LED芯片的像素密度和转移头面积的限制，造成生产效率低，成本较高。In the process of realizing Micro-LED transfer through the elastic stamp pick-up and transfer technology, the transfer head is in direct contact with the Micro-LED chip and the driving substrate, respectively. The transfer efficiency of the Micro-LED chip is limited by the pixel density of the Micro-LED chip and the area of the transfer head, resulting in low production efficiency and high cost.
例如，图4为基于激光分束阵列技术的巨量转移技术，将巨量的Micro-LED芯片组装到驱动背板上的示意图。激光束210通过掩膜(mask)220将基板230上的大量的Micro-LED 快速转移到驱动背板240上。For example, FIG. 4 is a schematic diagram of assembling a huge amount of Micro-LED chips on a driving backplane based on the mass transfer technology based on the laser beam splitting array technology. The laser beam 210 rapidly transfers a large number of Micro-LEDs on the substrate 230 to the driving backplane 240 through a mask 220 .
通过该激光分束阵列技术实现Micro-LED芯片转移的过程中，难以实现Micro-LED芯片的坏点和波长一致性选择，在量产过程中，存在合格率较低问题。In the process of realizing the transfer of Micro-LED chips through the laser beam splitting array technology, it is difficult to realize the selection of dead spots and wavelength consistency of the Micro-LED chips, and there is a problem of low qualification rate in the mass production process.
因此，本申请提供了一种Micro-LED芯片的转移方法，通过该方法，可以实现高效率、高合格率的巨量Micro-LED芯片的转移。Therefore, the present application provides a method for transferring Micro-LED chips, through which the transfer of a huge amount of Micro-LED chips with high efficiency and high yield can be realized.
以下，结合图5至图18，介绍本申请实施例提供的Micro-LED芯片的转移方法300。Hereinafter, with reference to FIG. 5 to FIG. 18 , the transfer method 300 of the Micro-LED chip provided by the embodiment of the present application will be described.
例如，图5为本申请实施例提供的Micro-LED芯片的转移方法300的流程示意图。如图5所示，该方法300包括：For example, FIG. 5 is a schematic flowchart of a method 300 for transferring a Micro-LED chip according to an embodiment of the present application. As shown in Figure 5, the method 300 includes:
S301，在晶圆上，制备Micro-LED芯片阵列层。S301, on the wafer, a Micro-LED chip array layer is prepared.
具体的，在晶圆上，外延刻蚀多个垂直的Micro-LED芯片，该多个垂直的Micro-LED芯片形成Micro-LED芯片阵列层。Specifically, on the wafer, a plurality of vertical Micro-LED chips are epitaxially etched, and the plurality of vertical Micro-LED chips form a Micro-LED chip array layer.
示例性的，该晶圆的材料可以为蓝宝石、硅等材料。Exemplarily, the material of the wafer may be sapphire, silicon and other materials.
本申请实施例对晶圆的形状不作限定。The embodiment of the present application does not limit the shape of the wafer.
本申请实施例对Micro-LED芯片阵列层中的多个Micro-LED芯片的排列方式不作限定。The embodiments of the present application do not limit the arrangement of the plurality of Micro-LED chips in the Micro-LED chip array layer.
例如，如图6所示，在晶圆401上，外延刻蚀垂直的Micro-LED芯片阵列层402。该Micro-LED芯片阵列层402包括4个Micro-LED芯片，即Micro-LED芯片4021、Micro-LED芯片4022、Micro-LED芯片4023和Micro-LED芯片4024。For example, as shown in FIG. 6 , on the wafer 401 , a vertical Micro-LED chip array layer 402 is epitaxially etched. The Micro-LED chip array layer 402 includes four Micro-LED chips, namely, Micro-LED chip 4021 , Micro-LED chip 4022 , Micro-LED chip 4023 and Micro-LED chip 4024 .
S302，在Micro-LED芯片阵列层远离晶圆的一侧，制备第一电极阵列层。S302, prepare a first electrode array layer on the side of the Micro-LED chip array layer away from the wafer.
例如，分别在每个Micro-LED芯片远离晶圆的一侧蒸镀第一电极。即一个Micro-LED芯片对应一个第一电极，该多个第一电极形成第一电极阵列层。For example, the first electrodes are respectively evaporated on the side of each Micro-LED chip away from the wafer. That is, one Micro-LED chip corresponds to one first electrode, and the plurality of first electrodes form a first electrode array layer.
例如，如图7所示，在Micro-LED芯片阵列层402远离晶圆401的一侧，制备第一电极阵列层403。具体的，在Micro-LED芯片4021远离晶圆401的一侧蒸镀第一电极4031，在Micro-LED芯片4022远离晶圆401的一侧蒸镀第一电极4032，在Micro-LED芯片4023远离晶圆401的一侧蒸镀第一电极4033以及在Micro-LED芯片4024远离晶圆401的一侧蒸镀第一电极4034。该第一电极4031、第一电极4032和第一电极4033形成第一电极阵列层403。For example, as shown in FIG. 7 , a first electrode array layer 403 is prepared on the side of the Micro-LED chip array layer 402 away from the wafer 401 . Specifically, the first electrode 4031 is evaporated on the side of the Micro-LED chip 4021 away from the wafer 401 , the first electrode 4032 is evaporated on the side of the Micro-LED chip 4022 away from the wafer 401 , and the first electrode 4032 is evaporated on the side of the Micro-LED chip 4022 away from the wafer 401 . The first electrode 4033 is evaporated on one side of the wafer 401 and the first electrode 4034 is evaporated on the side of the Micro-LED chip 4024 away from the wafer 401 . The first electrode 4031 , the first electrode 4032 and the first electrode 4033 form the first electrode array layer 403 .
S303，对Micro-LED芯片阵列层中的每个Micro-LED芯片进行坏点检测，以获取Micro-LED芯片阵列层中的坏点Micro-LED芯片。S303 , performing dead-dot detection on each Micro-LED chip in the Micro-LED chip array layer to obtain a dead-dot Micro-LED chip in the Micro-LED chip array layer.
在本申请实施例中，坏点Micro-LED芯片可以理解为该Micro-LED芯片在通电的情况下不亮。和/或，该Micro-LED芯片在通电的情况下，该Micro-LED芯片的亮度和/或该Micro-LED芯片发出的光线的波长不满足需求规格。In the embodiment of the present application, the dead-dot Micro-LED chip can be understood as that the Micro-LED chip does not light up when it is powered on. And/or, when the Micro-LED chip is powered on, the brightness of the Micro-LED chip and/or the wavelength of the light emitted by the Micro-LED chip do not meet the required specifications.
本申请实施例对坏点检测的方法不作限定。The embodiments of the present application do not limit the method for detecting dead pixels.
示例性的，可以基于电致发光(electroluminescent，EL)检测对每个Micro-LED进行坏点检测。Exemplarily, each Micro-LED may be inspected for dead pixels based on electroluminescent (EL) inspection.
例如，EL检测的原理可以是通过探针以及给Micro-LED芯片通电流，以点亮Micro-LED芯片，从而对Micro-LED芯片进行坏点检测。For example, the principle of EL detection can be to light up the Micro-LED chip through a probe and pass current to the Micro-LED chip, so as to detect the dead point of the Micro-LED chip.
又例如，EL检测的原理还可以是通过非接触电磁场感应点亮Micro-LED芯片，从而对Micro-LED芯片进行坏点检测。For another example, the principle of EL detection may also be to light up the Micro-LED chip by induction of a non-contact electromagnetic field, so as to perform dead pixel detection on the Micro-LED chip.
示例性的，可以基于光致发光(photoluminescence，PL)检测和自动光学辨识***(auto optical inspection，AOI)对每个Micro-LED进行坏点检测。Exemplarily, each Micro-LED can be inspected for dead pixels based on photoluminescence (PL) inspection and auto optical inspection (AOI).
例如，PL检测的原理可以是通过激光半导体本身的发光，对Micro-LED芯片进行坏点检测。For example, the principle of PL detection can be to detect the dead pixels of Micro-LED chips through the light emission of the laser semiconductor itself.
又例如，AOI检测的原理可以是通过光学观察对Micro-LED芯片进行坏点检测。For another example, the principle of AOI detection may be to detect dead pixels of Micro-LED chips through optical observation.
例如，如图7所示，通过对Micro-LED芯片4021、Micro-LED芯片4022、Micro-LED芯片4023和Micro-LED芯片4024这4个Micro-LED芯片进行坏点检测后，发现Micro-LED芯片4022为坏点Micro-LED芯片，Micro-LED芯片4021、Micro-LED芯片4023和Micro-LED芯片4024为良品Micro-LED芯片。其中，良品Micro-LED芯片可以理解为非坏点Micro-LED芯片。For example, as shown in Fig. 7, after detecting the dead pixels of four Micro-LED chips, Micro-LED chip 4021, Micro-LED chip 4022, Micro-LED chip 4023 and Micro-LED chip 4024, it is found that the Micro-LED chip The chip 4022 is a bad-dot Micro-LED chip, and the Micro-LED chip 4021 , the Micro-LED chip 4023 and the Micro-LED chip 4024 are good-quality Micro-LED chips. Among them, a good Micro-LED chip can be understood as a non-dead-dot Micro-LED chip.
上述S303可执行也可不执行，本申请对此不作限定。The foregoing S303 may be executable or not, which is not limited in this application.
S304，在第一电极阵列层远离Micro-LED阵列层的一侧制备疏水阵列层。S304, a hydrophobic array layer is prepared on the side of the first electrode array layer away from the Micro-LED array layer.
例如，对每个第一电极远离Micro-LED的一侧制备疏水层，即一个第一电极对应一个疏水层，该多个疏水层形成疏水阵列层。For example, a hydrophobic layer is prepared on the side of each first electrode away from the Micro-LED, that is, one first electrode corresponds to one hydrophobic layer, and the multiple hydrophobic layers form a hydrophobic array layer.
示例性的，疏水阵列层的材料可以为自组装薄膜(self-assembled monolayer，SAM)。Exemplarily, the material of the hydrophobic array layer can be a self-assembled monolayer (SAM).
例如，如图8所示，在第一电极阵列层403远离Micro-LED阵列层402的一侧制备疏水阵列层404。具体的，在第一电极4031远离Micro-LED阵列层402的一侧制备疏水层4041，在第一电极4032远离Micro-LED阵列层402的一侧制备疏水层4042，在第一电极4033远离Micro-LED阵列层402的一侧制备疏水层4043以及在第一电极4034远离Micro-LED阵列层402的一侧制备疏水层4044。该疏水层4041、疏水层4042、疏水层4043和疏水层4044形成疏水阵列层404。For example, as shown in FIG. 8 , a hydrophobic array layer 404 is prepared on the side of the first electrode array layer 403 away from the Micro-LED array layer 402 . Specifically, the hydrophobic layer 4041 is prepared on the side of the first electrode 4031 away from the Micro-LED array layer 402, the hydrophobic layer 4042 is prepared on the side of the first electrode 4032 away from the Micro-LED array layer 402, and the first electrode 4033 is away from the Micro-LED array layer 402. - Prepare a hydrophobic layer 4043 on one side of the LED array layer 402 and prepare a hydrophobic layer 4044 on the side of the first electrode 4034 away from the Micro-LED array layer 402 . The hydrophobic layer 4041 , the hydrophobic layer 4042 , the hydrophobic layer 4043 and the hydrophobic layer 4044 form the hydrophobic array layer 404 .
以上，通过S301至S304，介绍了在晶圆上制备多个Micro-LED芯片、以及每个Micro-LED芯片的第一电极层和每个Micro-LED芯片的疏水层的工艺流程。以下，将通过S305，介绍晶圆和多个Micro-LED芯片之间剥离的工艺流程。Above, through S301 to S304, the process flow of preparing a plurality of Micro-LED chips on a wafer, and the first electrode layer of each Micro-LED chip and the hydrophobic layer of each Micro-LED chip is introduced. Below, through S305, the process flow of debonding between wafers and multiple Micro-LED chips will be introduced.
在本申请实施例中，多个Micro-LED芯片可以理解为巨量Micro-LED芯片。In the embodiments of the present application, a plurality of Micro-LED chips can be understood as a huge number of Micro-LED chips.
S305，将Micro-LED芯片和晶圆之间剥离。S305, peel off the Micro-LED chip and the wafer.
例如，可以采用激光剥离(laser lift off，LLO)技术，将良品Micro-LED芯片剥离于水溶液中。For example, a laser lift off (LLO) technique can be used to lift off a good Micro-LED chip in an aqueous solution.
在一些实施例中，如果上述S303未执行，则需要将晶圆上所有的Micro-LED芯片和晶圆之间剥离。具体的，将经S304后得到的晶圆移至水溶液的上方，并从晶圆远离Micro-LED芯片的一侧照射激光，由于该激光能量分解晶圆与Micro-LED芯片接口处的氮化镓GaN缓冲层，从而实现将Micro-LED芯片和晶圆之间剥离。In some embodiments, if the above S303 is not performed, all the Micro-LED chips on the wafer need to be peeled off from the wafer. Specifically, the wafer obtained after S304 is moved to the top of the aqueous solution, and the laser is irradiated from the side of the wafer away from the Micro-LED chip. Since the laser energy decomposes the gallium nitride at the interface between the wafer and the Micro-LED chip GaN buffer layer, thereby realizing the peeling between the Micro-LED chip and the wafer.
在另一些实施例中，如果上述S303执行，则需要将晶圆上多个Micro-LED芯片中除坏点Micro-LED芯片之外的Micro-LED芯片和晶圆之间剥离，即实现将晶圆上多个Micro-LED芯片中良品Micro-LED芯片和晶圆之间剥离。In other embodiments, if the above-mentioned S303 is performed, it is necessary to peel off the Micro-LED chips except the defective Micro-LED chips among the multiple Micro-LED chips on the wafer and the wafer, that is, to realize the separation of the micro-LED chips from the wafer. Among the multiple Micro-LED chips on the circle, the good-quality Micro-LED chips are peeled off from the wafer.
因此，可以根据坏点Micro-LED芯片，将多个Micro-LED芯片中除坏点Micro-LED芯片之外的Micro-LED芯片和晶圆之间剥离，即实现良品Micro-LED芯片和晶圆之间剥离。Therefore, according to the Micro-LED chips with dead pixels, the Micro-LED chips and the wafers other than the Micro-LED chips with dead pixels can be peeled off, that is, the Micro-LED chips and wafers with good quality can be realized. peel between.
在一种可实现的方式中，根据坏点Micro-LED芯片，确定每个良品Micro-LED芯片 在晶圆上所占的区域(为了方便描述，记为待照射区域)，在该待照射区域内，从晶圆远离Micro-LED芯片的一侧照射激光，由于该激光能量分解晶圆与每个良品Micro-LED芯片接口处的氮化镓GaN缓冲层，从而实现将晶圆上多个Micro-LED芯片中良品Micro-LED芯片和晶圆之间剥离。In an achievable way, the area occupied by each good Micro-LED chip on the wafer (for the convenience of description, denoted as the area to be irradiated) is determined according to the defective Micro-LED chips. Inside, the laser is irradiated from the side of the wafer away from the Micro-LED chip. Since the laser energy decomposes the gallium nitride GaN buffer layer at the interface between the wafer and each good Micro-LED chip, multiple Micro-LED chips on the wafer are realized. -Peeling between a good Micro-LED chip and a wafer in LED chips.
上述待照射区域可以通过相应的定位***，确定该待照射区域的轮廓图形。在该待照射区域内，从晶圆远离Micro-LED芯片的一侧照射激光可以理解为在该待照射区域对应的轮廓图形内，从晶圆远离Micro-LED芯片的一侧照射激光。The above-mentioned area to be irradiated can be determined by a corresponding positioning system to determine the contour figure of the area to be irradiated. In the to-be-irradiated area, irradiating the laser from the side of the wafer away from the Micro-LED chip can be understood as irradiating the laser from the side of the wafer away from the Micro-LED chip in the contour pattern corresponding to the to-be-irradiated area.
在另一种可实现的方式中，根据坏点Micro-LED芯片，确定每个坏点Micro-LED芯片在晶圆上所占的区域，在晶圆上除坏点Micro-LED芯片在晶圆上所占的区域之外的区域内，从晶圆远离Micro-LED芯片的一侧照射激光，由于该激光能量分解晶圆与每个良品Micro-LED芯片接口处的氮化镓GaN缓冲层，从而实现将晶圆上多个Micro-LED芯片中良品Micro-LED芯片和晶圆之间剥离。In another achievable way, according to the dead-dot Micro-LED chips, the area occupied by each dead-dot Micro-LED chip on the wafer is determined, and the dead-dot Micro-LED chips on the wafer are removed from the wafer. In the area other than the area occupied by the top of the wafer, the laser is irradiated from the side of the wafer away from the Micro-LED chip. Since the laser energy decomposes the gallium nitride GaN buffer layer at the interface between the wafer and each good Micro-LED chip, In this way, the good Micro-LED chips among the multiple Micro-LED chips on the wafer are peeled off from the wafer.
S306，将多个具有疏水层和第一电极的Micro-LED芯片放置于水溶液中。S306, placing a plurality of Micro-LED chips with a hydrophobic layer and a first electrode in an aqueous solution.
在一些实施例中，可以直接将S305得到的多个具有疏水层和第一电极的Micro-LED芯片放置于水溶液中。In some embodiments, the plurality of Micro-LED chips with the hydrophobic layer and the first electrode obtained by S305 can be directly placed in an aqueous solution.
在另一些实施例中，在S305之前，即在将Micro-LED芯片和晶圆之间剥离之前，需要先将经S304后得到的晶圆放置在水溶液的上方，其中，Micro-LED芯片的疏水层朝向水溶液，且晶圆背离该水溶液；再将Micro-LED芯片和晶圆之间剥离(S305)；在将Micro-LED芯片和晶圆之间剥离后，Micro-LED芯片便会落入下方的水溶液中，便实现将多个具有疏水层和第一电极的Micro-LED芯片放置于水溶液中(S306)。In other embodiments, before S305, that is, before peeling off the Micro-LED chip and the wafer, the wafer obtained after S304 needs to be placed above the aqueous solution, wherein the hydrophobicity of the Micro-LED chip is The layer faces the aqueous solution, and the wafer faces away from the aqueous solution; then the Micro-LED chip and the wafer are peeled off (S305); after the Micro-LED chip and the wafer are peeled off, the Micro-LED chip will fall below In the aqueous solution of , a plurality of Micro-LED chips having a hydrophobic layer and a first electrode are placed in the aqueous solution (S306).
其中，晶圆放置在水溶液的上方可以理解为晶圆在水溶液的正上方或斜上方等。Where the wafer is placed above the aqueous solution, it can be understood that the wafer is directly above or obliquely above the aqueous solution, or the like.
此外，晶圆和水溶液之间的夹角在0°～90°之间。In addition, the angle between the wafer and the aqueous solution is between 0° and 90°.
例如，如图9所示，将经S304后制备的晶圆401移至水溶液405的正上方，并从晶圆401远离水溶液405的一侧，用激光只照射良品Micro-LED芯片(Micro-LED芯片4021、Micro-LED芯片4022和Micro-LED芯片4023)照射的区域，该激光能量分别分解晶圆401与良品Micro-LED芯片4021、良品Micro-LED芯片4022和良品Micro-LED芯片4023接口处的氮化镓GaN缓冲层，从而实现将良品Micro-LED芯片和晶圆401之间的剥离。For example, as shown in FIG. 9, move the wafer 401 prepared after S304 to just above the aqueous solution 405, and from the side of the wafer 401 away from the aqueous solution 405, only the good Micro-LED chips (Micro-LED chips) are irradiated with laser light. chip 4021, Micro-LED chip 4022 and Micro-LED chip 4023), the laser energy decomposes the wafer 401 and the interface of the good Micro-LED chip 4021, the good Micro-LED chip 4022 and the good Micro-LED chip 4023 respectively. The gallium nitride GaN buffer layer is used to realize the peeling between the good Micro-LED chip and the wafer 401.
这样，良品Micro-LED芯片会落入水溶液405中。例如，如图10所示，Micro-LED芯片410、Micro-LED芯片430和Micro-LED芯片440落入水溶液405。Micro-LED芯片420仍然在晶圆401上。由于Micro-LED芯片的疏水层的存在，Micro-LED芯片落入水溶液后，沿水溶液深度的方向，依次为疏水层、第一电极层、Micro-LED芯片。In this way, the good-quality Micro-LED chips will fall into the aqueous solution 405 . For example, as shown in FIG. 10 , Micro-LED chips 410 , Micro-LED chips 430 , and Micro-LED chips 440 fall into aqueous solution 405 . Micro-LED chip 420 is still on wafer 401 . Due to the existence of the hydrophobic layer of the Micro-LED chip, after the Micro-LED chip falls into the aqueous solution, along the direction of the depth of the aqueous solution, the order is the hydrophobic layer, the first electrode layer, and the Micro-LED chip.
在良品Micro-LED芯片剥离晶圆落入水溶液后，多个良品Micro-LED芯片会密排于水溶液中，此时，可以将水溶液中的多个良品Micro-LED芯片进行搅拌，以使得该多个良品Micro-LED芯片整体显示出来的颜色尽可能的没有色差，这样可以避免波长分bin。After the good-quality Micro-LED chips are peeled off the wafer and fall into the aqueous solution, multiple good-quality Micro-LED chips will be densely packed in the aqueous solution. The overall color displayed by a good-quality Micro-LED chip has no chromatic aberration as much as possible, which can avoid wavelength binning.
在一些实施例中，将水溶液中的多个良品Micro-LED芯片搅拌固定时长。In some embodiments, the plurality of good-quality Micro-LED chips in the aqueous solution are stirred for a fixed period of time.
例如，如图11中的左侧图所示，由于晶圆251、晶圆252、晶圆253和晶圆254中的每个晶圆上的Micro-LED发出的光线的纯度不一样，因此，每个晶圆上都分别包括Micro-LED的显示颜色为3种的Micro-LED，这样存在波长分bin。此外，在每个晶圆上存在坏点Micro-LED，例如，带黑点的Micro-LED便是坏点Micro-LED。For example, as shown in the left figure in FIG. 11, since the purity of the light emitted by the Micro-LEDs on each of the wafers 251, 252, 253 and 254 is different, therefore, Each wafer includes Micro-LEDs with three display colors, so that there are wavelength bins. In addition, there are dead-dot Micro-LEDs on each wafer, for example, a Micro-LED with black dots is a dead-dot Micro-LED.
通过上述S301至S305后，可以只将良品Micro-LED转移至水溶液中，因此，可以得到合格率较高的Micro-LED芯片。After passing through the above-mentioned S301 to S305, only the good-quality Micro-LED can be transferred into the aqueous solution, and therefore, a Micro-LED chip with a high pass rate can be obtained.
如果将水溶液中的多个Micro-LED芯片进行搅匀，如图11中的右侧图所示，水溶液中的Micro-LED芯片可以在某一区域内均匀地显示1种颜色，不会像如图11中的左侧图所示的晶圆上Micro-LED显示的颜色，存在波长分bin的问题，从而可以避免波长分bin。If multiple Micro-LED chips in the aqueous solution are stirred evenly, as shown in the right figure in Figure 11, the Micro-LED chips in the aqueous solution can display one color uniformly in a certain area, which is not as The color displayed by the Micro-LED on the wafer shown in the left figure in Figure 11 has the problem of wavelength division binning, so that wavelength division binning can be avoided.
以下，将通过S306至S307，介绍从转移头抓取剥离晶圆的多个Micro-LED芯片的工艺流程。Hereinafter, through S306 to S307, the process flow of grabbing a plurality of Micro-LED chips peeled off the wafer from the transfer head will be introduced.
S307，通过转移头，抓取水溶液中的Micro-LED芯片。S307, grab the Micro-LED chip in the aqueous solution through the transfer head.
在S307中，需要有可用的转移头。其中，可用的转移头可以理解为转移头可抓取到水溶液中的Micro-LED芯片。In S307, a transfer head needs to be available. Among them, the available transfer head can be understood as the Micro-LED chip that the transfer head can grab into the aqueous solution.
在一些实施例中，在S307之前，若有可用的转移头，则无需制备转移头。In some embodiments, before S307, if a transfer head is available, there is no need to prepare a transfer head.
在另一些实施例中，在S307之前，若无可用的转移头，需要制备转移头。其中，无可用的转移头可以理解为没有转移头可抓取到水溶液中的Micro-LED芯片。In other embodiments, before S307, if there is no available transfer head, a transfer head needs to be prepared. Among them, no available transfer head can be understood as a Micro-LED chip that no transfer head can grab into the aqueous solution.
具体的，在玻璃基板上制备透明层，并在透明层远离玻璃基板的一侧制备高分子材料阵列层，该高分子材料阵列层包括多个高分子材料层，相邻的高分子材料层形成凹槽，该凹槽用于容纳水溶液中的Micro-LED芯片。Specifically, a transparent layer is prepared on a glass substrate, and a polymer material array layer is prepared on the side of the transparent layer away from the glass substrate. The polymer material array layer includes a plurality of polymer material layers, and adjacent polymer material layers are formed The groove is used to accommodate the Micro-LED chip in the aqueous solution.
其中，当激光照射在透明层时，可以解与透明层直接接触的物质的键合，即实现透明层和与透明层直接接触的物质的分离。Among them, when the laser is irradiated on the transparent layer, the bond between the substances in direct contact with the transparent layer can be debonded, that is, the separation of the transparent layer and the substances in direct contact with the transparent layer can be realized.
示例性的，可以将透明材料烧蚀或键合在玻璃基板上，从而形成透明层。Exemplarily, a transparent material may be ablated or bonded to a glass substrate to form a transparent layer.
例如，透明层的材料可以是三氮烯、聚酰亚胺PI、苯并环丁烯BCB等材料。For example, the material of the transparent layer may be triazene, polyimide PI, benzocyclobutene BCB and other materials.
示例性的，可以每隔一个预设距离，将高分子材料涂覆在透明层上，形成高分子材料阵列层。其中，该预设距离和凹槽504的宽度相同或相近。Exemplarily, the polymer material may be coated on the transparent layer at every preset distance to form a polymer material array layer. Wherein, the preset distance is the same as or similar to the width of the groove 504 .
示例性的，可以将高分子材料涂覆在透明层上，并在高分子材料形成的层上光刻或蚀刻多个凹槽，相邻的凹槽之间形成一个高分子材料层，多个高分子材料层形成高分子阵列。Exemplarily, a polymer material can be coated on the transparent layer, and a plurality of grooves can be lithography or etched on the layer formed by the polymer material, and a polymer material layer is formed between adjacent grooves, and a plurality of grooves are formed. The polymer material layer forms a polymer array.
例如，高分子材料层的材料可以是疏水高分子材料、二氧化硅与六甲基二硅氮烷HMDS组成的材料等。For example, the material of the polymer material layer may be a hydrophobic polymer material, a material composed of silicon dioxide and hexamethyldisilazane HMDS, and the like.
例如，如图12所示，转移头500可以依次由玻璃基板501、透明层502和高分子材料阵列层503堆叠而成。其中，该高分子材料阵列层503包括4个高分子材料层，即高分子材料层5031、高分子材料层5032、高分子材料层5033和高分子材料层5044。该4个高分子材料层可形成3个凹槽，即高分子材料层5031和高分子材料层5032形成凹槽5041，高分子材料层5032和高分子材料层5033形成凹槽5042，以及高分子材料层5033和高分子材料层5034形成凹槽5043。For example, as shown in FIG. 12 , the transfer head 500 may be formed by stacking a glass substrate 501 , a transparent layer 502 and a polymer material array layer 503 in sequence. The polymer material array layer 503 includes four polymer material layers, namely a polymer material layer 5031 , a polymer material layer 5032 , a polymer material layer 5033 and a polymer material layer 5044 . The 4 polymer material layers can form 3 grooves, that is, the polymer material layer 5031 and the polymer material layer 5032 form the groove 5041, the polymer material layer 5032 and the polymer material layer 5033 form the groove 5042, and the polymer material layer 5032 and the polymer material layer 5033 form the groove 5042. The material layer 5033 and the polymer material layer 5034 form grooves 5043 .
在有可用的转移头后，需要在可用的转移头的凹槽的底部制备亲水层。该亲水层可以使得转移头在抓取水溶液中的Micro-LED芯片时，被抓取的Micro-LED芯片的疏水层远离凹槽的底部容纳在凹槽中。After a transfer head is available, a hydrophilic layer needs to be prepared at the bottom of the groove of the available transfer head. The hydrophilic layer can make the hydrophobic layer of the grabbed Micro-LED chip be accommodated in the groove away from the bottom of the groove when the transfer head grabs the Micro-LED chip in the aqueous solution.
本申请实施例对亲水层的材料不作限定。The materials of the hydrophilic layer are not limited in the embodiments of the present application.
例如，亲水层的材料为氧化物。又例如，亲水层的材料为高分子薄膜。For example, the material of the hydrophilic layer is oxide. For another example, the material of the hydrophilic layer is a polymer film.
例如，如图12所示，凹槽504的底部制备有亲水层505。具体的，凹槽5041的底部制备有亲水层5051，凹槽5042的底部制备有亲水层5052以及凹槽5043的底部制备有亲 水层5053。For example, as shown in FIG. 12 , a hydrophilic layer 505 is prepared at the bottom of the groove 504 . Specifically, a hydrophilic layer 5051 is prepared at the bottom of the groove 5041, a hydrophilic layer 5052 is prepared at the bottom of the groove 5042, and a hydrophilic layer 5053 is prepared at the bottom of the groove 5043.
在转移头的凹槽的底部制备亲水层后，执行S306。After the hydrophilic layer is prepared at the bottom of the groove of the transfer head, S306 is performed.
具体的，可以将转移头放置在Micro-LED芯片的下方，并将转移头的凹槽朝向水溶液中的Micro-LED芯片，采用提拉法，将转移头移出水溶液，以抓取水溶液中的Micro-LED芯片。Specifically, the transfer head can be placed under the Micro-LED chip, and the groove of the transfer head can face the Micro-LED chip in the aqueous solution, and the transfer head can be moved out of the aqueous solution by the pulling method to grab the Micro-LED chip in the aqueous solution. -LED chip.
将转移头移出水溶液可以是将转移头沿与水平面成第一角度的方向，移出水溶液。其中，第一角度大于0°且小于90°。Moving the transfer head out of the aqueous solution may be moving the transfer head out of the aqueous solution in a direction at a first angle to the horizontal. Wherein, the first angle is greater than 0° and less than 90°.
具体的，如图13所示，可以将转移头500放置在Micro-LED芯片410、Micro-LED芯片430和/或Micro-LED芯片440的下方，并将转移头500的凹槽504朝向Micro-LED芯片的方向，采用提拉法，将转移头500移出水溶液，以抓取水溶液405中的Micro-LED芯片410、Micro-LED芯片430和/或Micro-LED芯片440。Specifically, as shown in FIG. 13 , the transfer head 500 may be placed under the Micro-LED chip 410, the Micro-LED chip 430 and/or the Micro-LED chip 440, and the groove 504 of the transfer head 500 may face the Micro-LED chip 410, the Micro-LED chip 430 and/or the Micro-LED chip 440. In the direction of the LED chips, the transfer head 500 is moved out of the aqueous solution by using the pulling method to grab the Micro-LED chips 410 , the Micro-LED chips 430 and/or the Micro-LED chips 440 in the aqueous solution 405 .
在提拉转移头的过程中，由于Micro-LED芯片疏水层的存在、转移头的凹槽的存在和转移头的凹槽的亲水层的存在，被抓取的Micro-LED芯片会容纳在转移头的凹槽中，且在凹槽中，Micro-LED芯片的疏水层远离凹槽的底部，从而实现通过转移头，抓取水溶液中的Micro-LED芯片。During the process of pulling the transfer head, due to the existence of the hydrophobic layer of the Micro-LED chip, the existence of the groove of the transfer head and the existence of the hydrophilic layer of the groove of the transfer head, the grabbed Micro-LED chip will be accommodated in the In the groove of the transfer head, and in the groove, the hydrophobic layer of the Micro-LED chip is far away from the bottom of the groove, so that the Micro-LED chip in the aqueous solution can be grasped through the transfer head.
通过采用流体(水溶液)自组装的方式可以实现大面积转移头的快速装配，即使用非接触打印的方式实现Micro-LED芯片从转移头转移至目标基板上的转移过程，避免了粘粘过程中加温加压与热膨胀系数(coefficient of thermal expansion，CTE)问题对大面积转移的限制，提高了Micro-LED芯片的转移效率。The rapid assembly of a large-area transfer head can be achieved by using fluid (aqueous solution) self-assembly, that is, the transfer process of the Micro-LED chip from the transfer head to the target substrate is realized by non-contact printing, avoiding the sticking process. The limitation of large-area transfer due to heating, pressure and coefficient of thermal expansion (CTE) problems improves the transfer efficiency of Micro-LED chips.
例如，如图14所示，为抓取到Micro-LED芯片410、Micro-LED芯片430和Micro-LED芯片440的转移头500。For example, as shown in FIG. 14 , it is the transfer head 500 that grabs the Micro-LED chip 410 , the Micro-LED chip 430 and the Micro-LED chip 440 .
以下，将通过S308，介绍将转移头抓取的多个Micro-LED芯片固定至目标基板的工艺流程。Hereinafter, through S308, the process flow of fixing the plurality of Micro-LED chips grasped by the transfer head to the target substrate will be introduced.
S308，将抓取的Micro-LED芯片，固定至目标基板上。S308, the captured Micro-LED chip is fixed on the target substrate.
具体的，将转移头放置在目标基板的上方，其中，转移头上的Micro-LED芯片的疏水层朝向目标基板，且Micro-LED芯片背离目标基板；从转移头远离目标基板的一侧照射激光，该激光到达透明层，可以解与透明层直接接触的亲水层的键合，即实现透明层和亲水层之间的剥离，以使抓取的多个Micro-LED芯片剥离转移头并固定至目标基板上，此时，多个Micro-LED芯片中的每个Micro-LED芯片的疏水层贴合目标基板。Specifically, the transfer head is placed above the target substrate, wherein the hydrophobic layer of the Micro-LED chip on the transfer head faces the target substrate, and the Micro-LED chip faces away from the target substrate; the laser is irradiated from the side of the transfer head away from the target substrate , the laser reaches the transparent layer and can debond the hydrophilic layer in direct contact with the transparent layer, that is, to achieve peeling between the transparent layer and the hydrophilic layer, so that the grasped multiple Micro-LED chips are peeled off the transfer head and It is fixed on the target substrate. At this time, the hydrophobic layer of each Micro-LED chip in the plurality of Micro-LED chips is attached to the target substrate.
例如，如图15所示，目标基板600可以由驱动背板602和粘层601堆叠而成。通过粘层可以将多个Micro-LED芯片固定至目标基板上。For example, as shown in FIG. 15 , the target substrate 600 may be formed by stacking a driving backplane 602 and an adhesive layer 601 . Multiple Micro-LED chips can be fixed on the target substrate through the adhesive layer.
例如，驱动背板可以是TFT基板。For example, the driving backplane may be a TFT substrate.
粘层是具有粘性的粘合材料。例如，粘层采用的材料可以是异方性导电胶膜(anisotropic conductive film，ACF)。An adhesive layer is a sticky adhesive material. For example, the material used for the adhesive layer may be anisotropic conductive film (ACF).
具体的，如图16所示，将抓取到Micro-LED芯片410、Micro-LED芯片430和Micro-LED芯片440的转移头500移至目标基板600的上方，此时，Micro-LED芯片的疏水层朝向目标基板600，且Micro-LED芯片背离目标基板，目标基板600的粘层601在转移头500和驱动基板602之间。并用激光局部从玻璃基板401一侧扫描与Micro-LED芯片410对应的玻璃基板401上区域、与Micro-LED芯片430对应的玻璃基板401上区域，以 及与Micro-LED芯片440对应的玻璃基板401上区域，激光会透过玻璃基板照射在透明层502上，由于Micro-LED芯片410通过亲水层5051容纳在转移头500的凹槽5041中、Micro-LED芯片430通过亲水层5052容纳在转移头500的凹槽5042以及Micro-LED芯片440通过亲水层5053容纳在转移头500的凹槽5043中，且由于亲水层5051、亲水层5052和亲水层5053和透明层502直接接触，因此，照射在透明层502的激光可以解透明层502分别和亲水层5051、亲水层5052和亲水层5053和透明层502之间的键合，即实现Micro-LED芯片410、Micro-LED芯片430和Micro-LED芯片440分别与转移头500剥离，使具有亲水层5051的Micro-LED芯片410、具有亲水层5052的Micro-LED芯片430和具有亲水层5053的Micro-LED芯片440固定至目标基板600上。例如，如图17所示，为具有亲水层5051的Micro-LED芯片410、具有亲水层5052的Micro-LED芯片430和具有亲水层5053的Micro-LED芯片440固定至目标基板600上的结构示意图。此时，Micro-LED芯片410的疏水层4041、Micro-LED芯片430的疏水层4043和Micro-LED芯片440的疏水层4044分别贴合目标基板600。Specifically, as shown in FIG. 16 , the transfer head 500 that grabs the Micro-LED chip 410 , the Micro-LED chip 430 and the Micro-LED chip 440 is moved to the top of the target substrate 600 . The hydrophobic layer faces the target substrate 600 , and the Micro-LED chips face away from the target substrate. The adhesive layer 601 of the target substrate 600 is between the transfer head 500 and the driving substrate 602 . In addition, the laser is used to partially scan the upper area of the glass substrate 401 corresponding to the Micro-LED chip 410 , the upper area of the glass substrate 401 corresponding to the Micro-LED chip 430 , and the glass substrate 401 corresponding to the Micro-LED chip 440 from the side of the glass substrate 401 In the upper area, the laser will irradiate on the transparent layer 502 through the glass substrate. Since the Micro-LED chip 410 is accommodated in the groove 5041 of the transfer head 500 through the hydrophilic layer 5051 , and the Micro-LED chip 430 is accommodated in the groove 5041 of the transfer head 500 through the hydrophilic layer 5052 The groove 5042 of the transfer head 500 and the Micro-LED chip 440 are accommodated in the groove 5043 of the transfer head 500 through the hydrophilic layer 5053, and since the hydrophilic layer 5051, the hydrophilic layer 5052 and the hydrophilic layer 5053 and the transparent layer 502 are directly Therefore, the laser light irradiated on the transparent layer 502 can dissolve the bonding between the transparent layer 502 and the hydrophilic layer 5051, the hydrophilic layer 5052 and the hydrophilic layer 5053 and the transparent layer 502 respectively, that is, to realize the Micro-LED chip 410, The Micro-LED chip 430 and the Micro-LED chip 440 are peeled off from the transfer head 500 respectively, so that the Micro-LED chip 410 with the hydrophilic layer 5051 , the Micro-LED chip 430 with the hydrophilic layer 5052 and the Micro-LED chip with the hydrophilic layer 5053 are separated. - The LED chip 440 is fixed to the target substrate 600. For example, as shown in FIG. 17 , a Micro-LED chip 410 with a hydrophilic layer 5051 , a Micro-LED chip 430 with a hydrophilic layer 5052 , and a Micro-LED chip 440 with a hydrophilic layer 5053 are fixed on the target substrate 600 Schematic diagram of the structure. At this time, the hydrophobic layer 4041 of the Micro-LED chip 410 , the hydrophobic layer 4043 of the Micro-LED chip 430 and the hydrophobic layer 4044 of the Micro-LED chip 440 are respectively attached to the target substrate 600 .
上述激光局部从玻璃基板一侧扫描可以为先通过相应的定位***，确定需要扫描的区域的轮廓图形，并在需要扫描的区域对应的轮廓图形内，发出激光。The above-mentioned laser partial scanning from one side of the glass substrate can firstly determine the contour pattern of the area to be scanned through a corresponding positioning system, and emit laser light in the contour pattern corresponding to the area to be scanned.
以上，通过S301至S308，即完成了将巨量Micro-LED芯片从晶圆上转移至目标基底的工艺流程。以下，将通过S309至S310，介绍制备显示面板的工艺流程。Above, through S301 to S308, the process flow of transferring a huge amount of Micro-LED chips from the wafer to the target substrate is completed. Hereinafter, the process flow of preparing the display panel will be introduced through S309 to S310.
S309，移走转移头，加压加温目标基板。S309, the transfer head is removed, and the target substrate is heated under pressure.
在对目标基板进行加压加温的过程中，Micro-LED芯片的疏水层和Micro-LED芯片上的亲水层会挥发掉。同时，还可以实现每个Micro-LED芯片的电连接。During the process of pressurizing and heating the target substrate, the hydrophobic layer of the Micro-LED chip and the hydrophilic layer on the Micro-LED chip will volatilize. At the same time, the electrical connection of each Micro-LED chip can also be realized.
S310，在每个Micro-LED芯片远离目标基板的一侧制备垂直第二电极层。S310, a vertical second electrode layer is prepared on the side of each Micro-LED chip away from the target substrate.
在本申请实施例中，在第一电极层和第二电极层中，一个电极层的电极是N极，另一个电极层的电极是P极。例如，第一电极层的第一电极是P极、第二电极层的第二电极是N极。In the embodiments of the present application, in the first electrode layer and the second electrode layer, the electrode of one electrode layer is the N pole, and the electrode of the other electrode layer is the P pole. For example, the first electrode of the first electrode layer is a P electrode, and the second electrode of the second electrode layer is an N electrode.
例如，如图18所示，可以基于蒸镀或光刻镀膜的工艺，在每个Micro-LED芯片远离目标基板600的一侧制备垂直第二电极层603。在Micro-LED芯片410远离目标基板600的一侧制备垂直第二电极层6031，在Micro-LED芯片430远离目标基板600的一侧制备垂直第二电极层6032以及在Micro-LED芯片440远离目标基板600的一侧制备垂直第二电极层6033。For example, as shown in FIG. 18 , a vertical second electrode layer 603 may be prepared on the side of each Micro-LED chip away from the target substrate 600 based on an evaporation or photolithographic coating process. A vertical second electrode layer 6031 is prepared on the side of the Micro-LED chip 410 away from the target substrate 600, a vertical second electrode layer 6032 is prepared on the side of the Micro-LED chip 430 away from the target substrate 600, and a vertical second electrode layer 6032 is prepared on the side of the Micro-LED chip 430 away from the target A vertical second electrode layer 6033 is prepared on one side of the substrate 600 .
通过上述内容的介绍，例如，表1为方法300和现有方案的一些性能的对比。如表1所示，通过上述方法300，可以实现每小时1亿Micro-LED芯片的转移，不存在波长分bin问题，且可实现巨量修复。同时，通过上述方法300，Micro-LED芯片从晶圆上转移至目标基板后，形成的显示面板可以应用于所有电子设备。Through the introduction of the above content, for example, Table 1 is a comparison of some performances of the method 300 and existing solutions. As shown in Table 1, by the above method 300, the transfer of 100 million Micro-LED chips per hour can be realized, there is no wavelength binning problem, and a huge amount of repair can be realized. At the same time, by the above method 300, after the Micro-LED chips are transferred from the wafer to the target substrate, the formed display panel can be applied to all electronic devices.
表1Table 1
Figure PCTCN2021137438-appb-000002
Figure PCTCN2021137438-appb-000002
通过上述方法300进行巨量Micro-LED芯片转移后制备的显示面板(例如，如图18 所示的结构示意图)，可以应用于Micro-LED显示面板中。The display panel (eg, the schematic diagram shown in FIG. 18 ) prepared by transferring a large amount of Micro-LED chips by the above method 300 can be applied to a Micro-LED display panel.
通过上述方法300，可以实现高效率、高合格率的Micro-LED芯片巨量的转移，Micro-LED面板的大规模量产和成本的有效降低，并且可适应不同电子设备的显示模组制程。The above-mentioned method 300 can realize the transfer of a large amount of Micro-LED chips with high efficiency and high pass rate, the mass production of Micro-LED panels and the effective cost reduction, and can be adapted to the display module manufacturing process of different electronic devices.
还应理解，上述各过程的序号的大小并不意味着执行顺序的先后，各过程的执行顺序应以其功能和内在逻辑确定，而不应对本申请实施例的实施过程构成任何限定。It should also be understood that the size of the sequence numbers of the above processes does not mean the sequence of execution, and the execution sequence of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.
本申请实施例还提供了一种用于转移Micro-LED芯片的设备。在一种可实现的方式中，该设备可以执行上述方法300。在另一种可实现的方式中，该设备可以包括多个装置，该多个设备协作执行上述方法300。该设备可以称为实现巨量转移Micro-LED芯片的一套生产线设备。The embodiments of the present application also provide a device for transferring Micro-LED chips. In one implementation, the device may perform the method 300 described above. In another achievable manner, the apparatus may include multiple apparatuses, and the multiple apparatuses cooperate to execute the above-mentioned method 300 . This equipment can be called a set of production line equipment to realize the mass transfer of Micro-LED chips.
本申请实施例还提供了一种设备，包括一个或多个处理器；一个或多个存储器；所述一个或多个存储器存储有一个或者多个计算机程序，所述一个或者多个计算机程序包括指令，当所述指令被所述一个或多个处理器执行时，使得所述设备执行上述Micro-LED芯片的转移方法300。An embodiment of the present application further provides a device, including one or more processors; one or more memories; the one or more memories stores one or more computer programs, and the one or more computer programs include The instructions, when executed by the one or more processors, cause the apparatus to execute the above-described method 300 for transferring a Micro-LED chip.
本申请实施例还提供了一种存储介质，所述存储介质上存储有计算机程序或指令，所述计算机程序或指令被执行时使得计算机执行上述Micro-LED芯片的转移方法300。Embodiments of the present application further provide a storage medium, where a computer program or instruction is stored thereon, and when the computer program or instruction is executed, the computer executes the above Micro-LED chip transfer method 300 .
本申请实施例还提供了一种芯片***，包括：处理器，用于执行上述Micro-LED芯片的转移方法300。Embodiments of the present application further provide a chip system, including: a processor configured to execute the above Micro-LED chip transfer method 300 .
本领域普通技术人员可以意识到，结合本文中所公开的实施例描述的各示例的单元及算法步骤，能够以电子硬件、或者计算机软件和电子硬件的结合来实现。这些功能究竟以硬件还是软件方式来执行，取决于技术方案的特定应用和设计约束条件。专业技术人员可以对每个特定的应用来使用不同方法来实现所描述的功能，但是这种实现不应认为超出本申请的范围。Those of ordinary skill in the art can realize that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Skilled artisans may implement the described functionality using different methods for each particular application, but such implementations should not be considered beyond the scope of this application.
所属领域的技术人员可以清楚地了解到，为描述的方便和简洁，上述描述的***、装置和单元的具体工作过程，可以参考前述方法实施例中的对应过程，在此不再赘述。Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the above-described systems, devices and units may refer to the corresponding processes in the foregoing method embodiments, which will not be repeated here.
在本申请所提供的几个实施例中，应该理解到，所揭露的***、装置和方法，可以通过其它的方式实现。例如，以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，例如多个单元或组件可以结合或者可以集成到另一个***，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。In the several embodiments provided in this application, it should be understood that the disclosed system, apparatus and method may be implemented in other manners. For example, the apparatus embodiments described above are only illustrative. For example, the division of the units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components may be combined or Can be integrated into another system, or some features can be ignored, or not implemented. On the other hand, the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, indirect coupling or communication connection of devices or units, and may be in electrical, mechanical or other forms.
所述作为分离部件说明的单元可以是或者也可以不是物理上分开的，作为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。The units described as separate components may or may not be physically separated, and components displayed as units may or may not be physical units, that is, may be located in one place, or may be distributed to multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution in this embodiment.
另外，在本申请各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.
所述功能如果以软件功能单元的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本申请的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机 软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本申请各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(Read-Only Memory，ROM)、随机存取存储器(Random Access Memory，RAM)、磁碟或者光盘等各种可以存储程序代码的介质。The functions, if implemented in the form of software functional units and sold or used as independent products, may be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application can be embodied in the form of a software product in essence, or the part that contributes to the prior art or the part of the technical solution, and the computer software product is stored in a storage medium, including Several instructions are used to cause a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (Read-Only Memory, ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk and other media that can store program codes .
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。The above are only specific embodiments of the present application, but the protection scope of the present application is not limited to this. should be covered within the scope of protection of this application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims (22)

  1. 一种微型发光二极管Micro-LED芯片的转移方法，其特征在于，所述Micro-LED芯片上具有疏水层，所述方法包括：A method for transferring a micro light-emitting diode Micro-LED chip, characterized in that the Micro-LED chip has a hydrophobic layer, and the method includes:
    将多个具有所述疏水层的所述Micro-LED芯片放置于水溶液中；placing a plurality of the Micro-LED chips with the hydrophobic layer in an aqueous solution;
    通过转移头抓取所述水溶液中的多个所述Micro-LED芯片，所述转移头包括多个凹槽，所述凹槽用于容纳所述Micro-LED芯片，所述凹槽的底部设置有亲水层，以使抓取的所述Micro-LED芯片的所述疏水层远离所述凹槽的底部；Grab a plurality of the Micro-LED chips in the aqueous solution by a transfer head, the transfer head includes a plurality of grooves, the grooves are used for accommodating the Micro-LED chips, and the bottom of the grooves is arranged There is a hydrophilic layer to keep the hydrophobic layer of the grabbed Micro-LED chip away from the bottom of the groove;
    将抓取的多个所述Micro-LED芯片固定至目标基板上，所述Micro-LED芯片的所述疏水层贴合所述目标基板。A plurality of the grabbed Micro-LED chips are fixed on the target substrate, and the hydrophobic layer of the Micro-LED chips is attached to the target substrate.
  2. 根据权利要求1所述的转移方法，其特征在于，在所述将多个具有所述疏水层的所述Micro-LED芯片放置于水溶液中之前，所述方法还包括：The transfer method according to claim 1, wherein before placing the plurality of Micro-LED chips with the hydrophobic layer in an aqueous solution, the method further comprises:
    在晶圆上制备多个所述Micro-LED芯片；preparing a plurality of the Micro-LED chips on a wafer;
    在所述Micro-LED芯片远离所述晶圆的一侧制备所述疏水层；preparing the hydrophobic layer on the side of the Micro-LED chip away from the wafer;
    将多个所述Micro-LED芯片和所述晶圆之间剥离。A plurality of the Micro-LED chips and the wafer are peeled off.
  3. 根据权利要求2所述的转移方法，其特征在于，所述将多个所述Micro-LED芯片和所述晶圆之间剥离包括：The transfer method according to claim 2, wherein the peeling between the plurality of the Micro-LED chips and the wafer comprises:
    从所述晶圆远离所述Micro-LED芯片的一侧照射激光，以使多个所述Micro-LED芯片和所述晶圆之间剥离。Laser light is irradiated from the side of the wafer away from the Micro-LED chips, so as to separate a plurality of the Micro-LED chips from the wafer.
  4. 根据权利要求2所述的转移方法，其特征在于，在所述将多个所述Micro-LED芯片和所述晶圆之间剥离之前，所述方法还包括：The transfer method according to claim 2, wherein before the peeling between the plurality of Micro-LED chips and the wafer, the method further comprises:
    对多个所述Micro-LED芯片中的每个Micro-LED芯片进行坏点检测，以获得坏点Micro-LED芯片；performing dead pixel detection on each of the plurality of the Micro-LED chips to obtain a dead pixel Micro-LED chip;
    所述将多个所述Micro-LED芯片和所述晶圆之间剥离包括：The peeling between the plurality of Micro-LED chips and the wafer includes:
    根据所述坏点Micro-LED芯片，将多个所述Micro-LED芯片中除所述坏点Micro-LED芯片之外的Micro-LED芯片和所述晶圆之间剥离。According to the dead-dot Micro-LED chips, the Micro-LED chips other than the dead-dot Micro-LED chips among the plurality of Micro-LED chips are peeled off from the wafer.
  5. 根据权利要求4所述的转移方法，其特征在于，所述根据所述坏点Micro-LED芯片，将多个所述Micro-LED芯片中除所述坏点Micro-LED芯片之外的Micro-LED芯片和所述晶圆之间剥离包括：The transfer method according to claim 4, wherein, according to the dead-dot Micro-LED chips, the Micro-LED chips other than the dead-dot Micro-LED chips among the plurality of Micro-LED chips are transferred according to the dead-dot Micro-LED chips. Debonding between the LED chip and the wafer includes:
    根据所述坏点Micro-LED芯片，确定待照射区域，所述待照射区域为所述晶圆上除所述坏点Micro-LED芯片所占区域之外的区域；Determine the to-be-irradiated area according to the dead-dot Micro-LED chip, and the to-be-irradiated area is the area on the wafer except the area occupied by the dead-dot Micro-LED chip;
    在所述待照射区域内，从所述晶圆远离所述Micro-LED芯片的一侧照射激光，以使多个所述Micro-LED芯片中除所述坏点Micro-LED芯片之外的Micro-LED芯片和所述晶圆之间剥离。In the to-be-irradiated area, the laser is irradiated from the side of the wafer away from the Micro-LED chips, so that the Micro-LED chips other than the dead-dot Micro-LED chips among the plurality of Micro-LED chips are irradiated with laser light. - Debonding between the LED chip and the wafer.
  6. 根据权利要求2至5中任一项所述的转移方法，其特征在于，在所述将多个所述Micro-LED芯片和所述晶圆之间剥离之前，所述方法还包括：The transfer method according to any one of claims 2 to 5, wherein before the peeling between the plurality of Micro-LED chips and the wafer, the method further comprises:
    将所述晶圆放置在所述水溶液的上方，以使在所述将多个所述Micro-LED芯片和所述晶圆之间剥离之后，所述多个具有所述疏水层的所述Micro-LED芯片放置于水溶液中，其 中，所述疏水层朝向所述水溶液，且所述晶圆背离所述水溶液。placing the wafer over the aqueous solution so that after the peeling between the plurality of the Micro-LED chips and the wafer, the plurality of the Micro-LED chips with the hydrophobic layer - The LED chip is placed in an aqueous solution, wherein the hydrophobic layer faces the aqueous solution and the wafer faces away from the aqueous solution.
  7. 根据权利要求1至6中任一项所述的转移方法，其特征在于，在所述通过转移头抓取所述水溶液中的多个所述Micro-LED芯片之前，所述方法还包括：The transfer method according to any one of claims 1 to 6, characterized in that before the grabbing of the plurality of Micro-LED chips in the aqueous solution by the transfer head, the method further comprises:
    对所述水溶液中的多个所述Micro-LED芯片进行搅拌。A plurality of the Micro-LED chips in the aqueous solution are stirred.
  8. 根据权利要求1至7中任一项所述的转移方法，其特征在于，所述通过转移头抓取所述水溶液中的多个所述Micro-LED芯片包括：The transfer method according to any one of claims 1 to 7, wherein the grabbing of the plurality of Micro-LED chips in the aqueous solution by the transfer head comprises:
    将所述转移头放置在多个所述Micro-LED芯片的下方，所述转移头的所述凹槽朝向所述Micro-LED芯片；placing the transfer head under a plurality of the Micro-LED chips, and the groove of the transfer head faces the Micro-LED chips;
    将所述转移头移出所述水溶液，以抓取多个所述Micro-LED芯片。The transfer head is moved out of the aqueous solution to grab a plurality of the Micro-LED chips.
  9. 根据权利要求1至8中任一项所述的转移方法，其特征在于，所述将抓取的多个所述Micro-LED芯片固定至目标基板上包括：The transfer method according to any one of claims 1 to 8, wherein the fixing the grabbed plurality of the Micro-LED chips to the target substrate comprises:
    将所述转移头放置在所述目标基板的上方，其中，所述Micro-LED芯片的所述疏水层朝向所述目标基板，且所述Micro-LED芯片背离所述目标基板；placing the transfer head above the target substrate, wherein the hydrophobic layer of the Micro-LED chip faces the target substrate, and the Micro-LED chip faces away from the target substrate;
    从所述转移头远离所述目标基板的一侧照射激光，所述转移头和所述亲水层之间剥离，以使抓取的多个所述Micro-LED芯片剥离所述转移头并固定至所述目标基板上。Irradiate laser light from the side of the transfer head away from the target substrate, and peel off between the transfer head and the hydrophilic layer, so that the grabbed multiple Micro-LED chips are peeled off the transfer head and fixed onto the target substrate.
  10. 根据权利要求1至9中任一项所述的转移方法，其特征在于，所述目标基板包括堆叠设置的粘层和驱动背板，所述粘层用于将多个所述Micro-LED芯片固定至目标基板上。The transfer method according to any one of claims 1 to 9, wherein the target substrate comprises an adhesive layer and a driving backplane arranged in a stack, and the adhesive layer is used for transferring a plurality of the Micro-LED chips fixed to the target substrate.
  11. 根据权利要求1至10中任一项所述的转移方法，其特征在于，在所述将抓取的多个所述Micro-LED芯片固定至目标基板上之后，所述方法还包括：The transfer method according to any one of claims 1 to 10, wherein after the grabbing of the plurality of Micro-LED chips is fixed on the target substrate, the method further comprises:
    对所述目标基板加热，去除所述Micro-LED芯片的疏水层。The target substrate is heated to remove the hydrophobic layer of the Micro-LED chip.
  12. 根据权利要求1至11中任一项所述的转移方法，其特征在于，所述Micro-LED芯片上还具有第一电极层，所述第一电极层设置在所述Micro-LED芯片和所述疏水层之间。The transfer method according to any one of claims 1 to 11, wherein the Micro-LED chip further has a first electrode layer, and the first electrode layer is provided on the Micro-LED chip and the between the hydrophobic layers.
  13. 根据权利要求12所述的转移方法，其特征在于，在所述将抓取的多个所述Micro-LED芯片固定至目标基板上之后，所述方法还包括：The transfer method according to claim 12, wherein after the grabbing of the plurality of Micro-LED chips is fixed on the target substrate, the method further comprises:
    在所述Micro-LED芯片远离所述目标基板的一侧制备第二电极层。A second electrode layer is prepared on the side of the Micro-LED chip away from the target substrate.
  14. 根据权利要求1至13中任一项所述的转移方法，其特征在于，所述转移头还包括：The transfer method according to any one of claims 1 to 13, wherein the transfer head further comprises:
    玻璃基板；Glass base board;
    设置在所述玻璃基板上的透明层；a transparent layer disposed on the glass substrate;
    设置在所述透明层远离所述玻璃基板的一侧的高分子材料阵列层，所述高分子材料阵列层包括多个高分子材料层，相邻的高分子材料层之间形成所述凹槽；A polymer material array layer disposed on the side of the transparent layer away from the glass substrate, the polymer material array layer includes a plurality of polymer material layers, and the grooves are formed between adjacent polymer material layers ;
    在所述转移头远离所述Micro-LED芯片的一侧被激光照射的情况下，所述透明层和所述亲水层之间剥离，以使抓取的多个所述Micro-LED芯片剥离所述转移头并固定至所述目标基板上。When the side of the transfer head away from the Micro-LED chip is irradiated by laser, the transparent layer and the hydrophilic layer are peeled off, so that the grabbed multiple Micro-LED chips are peeled off The transfer head is fixed on the target substrate.
  15. 根据权利要求1至14中任一项所述的转移方法，其特征在于，所述疏水层的材料为自组装薄膜SAM。The transfer method according to any one of claims 1 to 14, wherein the material of the hydrophobic layer is a self-assembled thin film SAM.
  16. 一种晶圆，其特征在于，所述晶圆包括微型发光二极管Micro-LED芯片，所述 Micro-LED芯片上远离所述晶圆的一侧具有疏水层。A wafer, characterized in that the wafer includes a micro light-emitting diode Micro-LED chip, and a side of the Micro-LED chip away from the wafer has a hydrophobic layer.
  17. 根据权利要求16所述的晶圆，其特征在于，在所述晶圆远离所述Micro-LED芯片的一侧被激光照射的情况下，所述Micro-LED芯片和所述晶圆之间剥离。The wafer according to claim 16, wherein when the side of the wafer away from the Micro-LED chip is irradiated by laser light, the Micro-LED chip and the wafer are peeled off .
  18. 根据权利要求16或17所述的晶圆，其特征在于，所述Micro-LED芯片上还具有第一电极层，所述第一电极层设置在所述Micro-LED芯片和所述疏水层之间。The wafer according to claim 16 or 17, wherein the Micro-LED chip further has a first electrode layer, and the first electrode layer is disposed between the Micro-LED chip and the hydrophobic layer between.
  19. 根据权利要求16至18中任一项所述的晶圆，其特征在于，所述疏水层的材料为自组装薄膜SAM。The wafer according to any one of claims 16 to 18, wherein the material of the hydrophobic layer is a self-assembled thin film SAM.
  20. 一种用于抓取微型发光二极管Micro-LED芯片的转移头，其特征在于，所述Micro-LED芯片上具有疏水层，所述转移头包括：A transfer head for grasping a micro light-emitting diode Micro-LED chip, characterized in that the Micro-LED chip has a hydrophobic layer, and the transfer head comprises:
    凹槽，所述凹槽用于容纳所述Micro-LED芯片，所述凹槽的底部设置有亲水层，以使抓取的所述Micro-LED芯片的所述疏水层远离所述凹槽的底部。a groove, the groove is used for accommodating the Micro-LED chip, and the bottom of the groove is provided with a hydrophilic layer, so that the hydrophobic layer of the grabbed Micro-LED chip is kept away from the groove bottom of.
  21. 根据权利要求20所述的转移头，其特征在于，所述转移头还包括：The transfer head of claim 20, wherein the transfer head further comprises:
    玻璃基板；Glass base board;
    设置在所述玻璃基板上的透明层；a transparent layer disposed on the glass substrate;
    设置在所述透明层远离所述玻璃基板的一侧的高分子材料阵列层，所述高分子材料阵列层包括多个高分子材料层，相邻的高分子材料层之间形成所述凹槽。A polymer material array layer disposed on the side of the transparent layer away from the glass substrate, the polymer material array layer includes a plurality of polymer material layers, and the grooves are formed between adjacent polymer material layers .
  22. 根据权利要求21所述的转移头，其特征在于，在所述转移头远离所述凹槽的一侧被激光照射的情况下，所述透明层和所述亲水层之间剥离，以使抓取的多个所述Micro-LED芯片剥离所述转移头。The transfer head according to claim 21, wherein when the side of the transfer head away from the groove is irradiated with laser light, the transparent layer and the hydrophilic layer are peeled off, so that the The grasped plurality of the Micro-LED chips are peeled off the transfer head.
PCT/CN2021/137438 2021-01-15 2021-12-13 Chip transfer method, wafer, and transfer head for grabbing chip WO2022151886A1 (en)

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