CN116936554B - Method for preparing Mini LED array by using mechanical transfer technology - Google Patents
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- CN116936554B CN116936554B CN202310890204.6A CN202310890204A CN116936554B CN 116936554 B CN116936554 B CN 116936554B CN 202310890204 A CN202310890204 A CN 202310890204A CN 116936554 B CN116936554 B CN 116936554B
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000005516 engineering process Methods 0.000 title claims abstract description 18
- 238000012546 transfer Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000005520 cutting process Methods 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 230000000007 visual effect Effects 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 16
- 239000010980 sapphire Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 abstract description 5
- 239000011159 matrix material Substances 0.000 abstract description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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Abstract
The invention discloses a method for preparing a Mini LED array by using a mechanical transfer technology, which comprises the following steps: step 1, preparing a chip; step 2, cutting the chip, namely cutting the chip obtained in the step 1 in a longitudinal and transverse cutting mode, enabling laser to walk in a longitudinal and transverse direction, and cutting to obtain a single Mini LED chip with a target size; step 3, etching the target substrate, namely etching the target substrate according to a target array N1X N2, transversely etching N1 strips, and longitudinally etching N2 strips; step 4, taking chips, namely taking single Mini LED chips with the number P at one time by using a mechanical arm; step 5, placing chips, namely placing the P single Mini LED chips on a rectangular area which is cut off by etching on a target substrate, and placing the chips diagonally until the Mini LED array is manufactured; according to the method, when a single Mini LED chip is mechanically transferred to manufacture a Mini LED array, matrix diagonal transfer is adopted, so that the visual monitoring and recognition times are reduced, and the manufacturing efficiency of the Mini LED array is effectively improved.
Description
Technical Field
The invention belongs to the technical field of LED array displays, and particularly relates to a method for preparing a Mini LED array by using a mechanical transfer technology.
Background
The existing Mini LED array manufacturing method comprises the following steps:
preparing a substrate: suitable substrates are selected, such as silicon substrates, glass substrates, and the like. And coating a layer of metal film on the surface of the substrate for forming the electrode.
Printing a photoresist: a photoresist is coated on a substrate, and a micro pattern is formed on the photoresist layer by a photolithography technique to define the position and shape of the Mini LED.
Preparing a light emitting layer: and depositing a semiconductor material on the printed photoresist pattern by using a chemical vapor deposition or physical vapor deposition technology to form a light-emitting layer of the Mini LED.
Preparing a backlight: a light source such as a white LED is fixed to the back surface of the substrate, and is used as a backlight for a Mini LED.
And (3) transferring: and stripping the prepared Mini LED array from the growth substrate, and accurately transferring the LED array to a target substrate.
And (3) packaging and testing: and packaging and testing the transferred Mini LED to ensure the performance and reliability of the LED.
For improving the position and arrangement precision of the Mini LED during transfer, a mechanical method of mechanical arm picking and placing is generally adopted for arrangement, but the common mechanical arm picking and placing needs to use visual monitoring and identification to meet the accuracy during placement, so that one visual monitoring and identification needs to be carried out every time a single Mini LED chip is placed, and the efficiency of manufacturing the Mini LED array can be reduced.
Disclosure of Invention
The invention aims to provide a method for preparing a Mini LED array by using a mechanical transfer technology, which adopts matrix diagonal transfer to reduce the visual monitoring and identification times and effectively improve the manufacturing efficiency of the Mini LED array when a single Mini LED chip is mechanically transferred to manufacture the Mini LED array.
In order to achieve the above purpose, the present invention provides the following technical solutions: a method of manufacturing a Mini LED array using a mechanical transfer technique, the method of manufacturing a Mini LED array using a mechanical transfer technique comprising the steps of:
step 1, preparing a chip;
step 2, cutting the chip, namely cutting the chip obtained in the step 1 in a longitudinal and transverse cutting mode, enabling laser to walk in a longitudinal and transverse direction, and cutting to obtain a single Mini LED chip with a target size;
step 3, etching the target substrate, namely etching the target substrate according to a target array N1 multiplied by N2, transversely etching N1 strips, and longitudinally etching N2 strips;
step 4, taking chips, namely taking single Mini LED chips with the number P at one time by using a mechanical arm;
and 5, placing chips, namely placing the P single Mini LED chips on a rectangular area which is cut off by etching on a target substrate, and placing the chips diagonally until the Mini LED array is manufactured.
According to a preferred scheme of the invention, the specific operation steps of the step 1 are as follows:
step 101: preparing a sapphire substrate: selecting a target sapphire substrate, manufacturing the target sapphire substrate to be rectangular in specification, and polishing and flattening all surfaces.
Step 102: the photoetching process comprises the following steps: a chip pattern is formed on the sapphire substrate in step 101, a photoresist is coated as a thin film on the substrate, and then the photoresist is exposed and developed using a photolithography machine, thereby forming a chip pattern of a micrometer scale.
Step 103: vapor deposition technique: and depositing various materials on the surface of the chip, wherein a vapor deposition technology is used for manufacturing red, green and blue LEDs on the surface of the chip, heating the gaseous materials to high temperature, generating the required materials through chemical reaction, and then depositing the materials on the surface of the chip to form the LED structure.
Step 104: and (3) a metallization process: depositing a metal material on the surface of the chip by using a vacuum deposition or electron beam evaporation technology, and respectively depositing a metal electrode material on the anode and the cathode of the LED chip;
step 105, fixing and packaging a glass protection plate on the uppermost layer;
and 106, stacking the chips subjected to encapsulation protection in the step 105 for standby.
According to the preferred scheme of the invention, the cutting in the step 2 is based on the chips prepared in the step 1, the chips stacked in the step 106 are subjected to longitudinal and transverse cutting times and the distance S1 or S2 after cutting according to the required size of the single Mini LED chip, so that the rectangular single Mini LED chip with nS1 multiplied by nS2 is obtained, n is an integer larger than 0, and after cutting, the packaging glass protection plate at the upper end is removed by laser.
In a preferred embodiment of the present invention, each of N1 and N2 is an integer greater than or equal to 2.
According to the preferred scheme of the invention, the target substrate is selected as a glass plate in the step 3, and the target substrate is etched in a transverse and longitudinal mode according to the single Mini LED chip size nS1×nS2 obtained by cutting in the step 1 and the number of array rows required by targets, so that the bearing area of the single Mini LED chip is separated, and the bearing area is consistent with the size of the single Mini LED chip.
In a preferred embodiment of the present invention, the specific operation in the step 4 is: the mechanical arm simultaneously takes single Mini LED chips with the number of small values in N1 and N2 in the step 2.
In a preferred embodiment of the present invention, the specific operation of the step 5 is as follows: and the mechanical arm rotates by +/-45 degrees, then performs visual identification, and is arranged in a bearing area on the target substrate.
The beneficial effects of the invention are as follows: according to the method, when a single Mini LED chip is mechanically transferred to manufacture a Mini LED array, matrix diagonal transfer is adopted, the number of the Mini LED chips required by the Mini LED array is grasped once or grasped in an array-dividing manner in the mechanical arm taking process, and the mechanical arm is rotated for angle placement before placement, so that a plurality of Mini LED chips can be placed once along the diagonal direction of a target array, the visual monitoring recognition times are reduced, and the manufacturing efficiency of the Mini LED array is effectively improved.
Drawings
FIG. 1 is a schematic flow chart of a method for manufacturing Mini LED array by using mechanical transfer technology;
fig. 2 is a schematic diagram of an embodiment of the present invention for performing operations in preparing a Mini LED array using a mechanical transfer technique.
Detailed Description
For a further understanding of the invention, its features and advantages, reference is now made to the following examples, which are illustrated in the accompanying drawings.
Referring to fig. 1, a method for manufacturing a Mini LED array using a mechanical transfer technique according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
A method for preparing a Mini LED array by using a mechanical transfer technology, in this embodiment, the Mini LED array is fabricated by adopting the following steps:
step 1, preparing a chip:
step 101: preparing a sapphire substrate: selecting a target sapphire substrate, manufacturing the target sapphire substrate to be rectangular in specification, and polishing and flattening all surfaces.
Step 102: the photoetching process comprises the following steps: a chip pattern is formed on the sapphire substrate in step 101, a photoresist is coated as a thin film on the substrate, and then the photoresist is exposed and developed using a photolithography machine, thereby forming a chip pattern of a micrometer scale.
Step 103: vapor deposition technique: and depositing various materials on the surface of the chip, wherein a vapor deposition technology is used for manufacturing red, green and blue LEDs on the surface of the chip, heating the gaseous materials to high temperature, generating the required materials through chemical reaction, and then depositing the materials on the surface of the chip to form the LED structure.
Step 104: and (3) a metallization process: depositing a metal material on the surface of the chip by using a vacuum deposition or electron beam evaporation technology, and respectively depositing a metal electrode material on the anode and the cathode of the LED chip;
step 105, fixing and packaging a glass protection plate on the uppermost layer;
step 106, stacking the chips subjected to encapsulation protection in the step 105 for standby;
cutting the chip obtained in the step 1, wherein the cutting adopts a longitudinal and transverse cutting mode, laser walking is in a longitudinal and transverse direction, a single Mini LED chip with a target size is obtained by cutting, the stacked chips in the step 106 are subjected to longitudinal and transverse cutting times and a distance S1 or S2 moved after cutting according to the required size of the single Mini LED chip, a rectangular single Mini LED chip with nS1 multiplied by nS2 is obtained, n is an integer larger than 0, and after cutting, the packaging glass protection plate at the upper end is removed by laser;
step 3, etching a target substrate, namely etching the target substrate according to a target array N1×N2, transversely etching N1 pieces, longitudinally etching N2 pieces, selecting the target substrate as a glass plate, and etching the target substrate in a transverse and longitudinal mode according to the single Mini LED chip size nS1×nS2 obtained by cutting in the step 1 and the number of array rows and columns required by targets so as to separate a bearing area of the single Mini LED chip, wherein the bearing area is consistent with the size of the single Mini LED chip;
step 4, taking the chips, namely taking single Mini LED chips with the number P at one time by using a mechanical arm, and simultaneously taking single Mini LED chips with the number smaller than the number of the N1 and the N2 in the step 2 by using the mechanical arm;
and 5, placing chips, namely placing the P single Mini LED chips on a rectangular area which is cut off by etching on a target substrate, performing visual identification after rotating the mechanical arm by +/-45 degrees by adopting diagonal placement, and placing the chips on a bearing area on the target substrate until the Mini LED array is manufactured.
Wherein N is 1, S1 is 10 μm, S2 is 10 μm, N1 is 2, and N2 is 2.
Further, as shown in fig. 2, the specific steps of this embodiment are as follows:
step 1, preparing a chip:
step 101: preparing a sapphire substrate: selecting a target sapphire substrate, manufacturing the target sapphire substrate to be rectangular in specification, and polishing and flattening all surfaces.
Step 102: the photoetching process comprises the following steps: a chip pattern is formed on the sapphire substrate in step 101, a photoresist is coated as a thin film on the substrate, and then the photoresist is exposed and developed using a photolithography machine, thereby forming a chip pattern of a micrometer scale.
Step 103: vapor deposition technique: and depositing various materials on the surface of the chip, wherein a vapor deposition technology is used for manufacturing red, green and blue LEDs on the surface of the chip, heating the gaseous materials to high temperature, generating the required materials through chemical reaction, and then depositing the materials on the surface of the chip to form the LED structure.
Step 104: and (3) a metallization process: depositing a metal material on the surface of the chip by using a vacuum deposition or electron beam evaporation technology, and respectively depositing a metal electrode material on the anode and the cathode of the LED chip;
step 105, fixing and packaging a glass protection plate on the uppermost layer;
step 106, stacking the chips subjected to encapsulation protection in the step 105 for standby;
cutting the chip obtained in the step 1, wherein the cutting adopts a longitudinal and transverse cutting mode, the laser walking is in a longitudinal and transverse direction, a single Mini LED chip with a target size is obtained by cutting, the stacked chips in the step 106 are subjected to longitudinal and transverse cutting times and a distance of 10 mu m after cutting according to the required size of the single Mini LED chip, a rectangular single Mini LED chip with the length of 10 mu m multiplied by 10 mu m is obtained, and after cutting, the packaging glass protection plate at the upper end is removed by the laser;
step 3, etching the target substrate, namely etching the target substrate according to a target array 2 multiplied by 2, transversely etching 2, longitudinally etching 2, selecting the target substrate as a glass plate, and etching the target substrate in a transverse and longitudinal mode according to the single Mini LED chip size 10 mu m multiplied by 10 mu m obtained by cutting in the step 1 and the row number of which the number is 2, so as to separate a bearing area of the single Mini LED chip, wherein the bearing area is consistent with the size of the single Mini LED chip;
step 4, taking chips, namely taking single Mini LED chips with the number of 2 at one time by using a mechanical arm;
and 5, placing chips, namely placing the taken 2 single Mini LED chips in a rectangular area which is cut off by etching on a target substrate, performing visual identification after rotating the mechanical arm by plus 45 degrees, placing the initial Mini LED chips on the mechanical arm in an initial bearing area on the target substrate, performing the diagonal placement, performing visual identification after rotating the taken 2 single Mini LED chips by minus 45 degrees, and placing the LED chips in a vertical diagonal head area on the target substrate, wherein the Mini LED chips are not placed, thereby completing the manufacturing of the Mini LED array.
The glass etching is performed by using glass etching liquid made of raw materials such as ammonium fluoride, oxalic acid, ammonium sulfate and the like, and the etching depth is 1/100 of the height of the substrate.
Particularly, only the numerical value of N1 or N2 is required to be changed, so that any Mini LED array can be obtained, and for a plurality of matrixes with multiple rows and columns, the matrixes are divided into arrays, and the maximum number of rows or columns of the sub-matrixes after the matrix division is the maximum numerical value of the one-time grabbing quantity allowed by the mechanical arm, so that all the arrays are completed in sequence.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (3)
1. A method for preparing a Mini LED array using a mechanical transfer technique, comprising the steps of:
step 1, preparing a chip, wherein the specific operation steps are as follows:
step 101: preparing a sapphire substrate: selecting a target sapphire substrate, manufacturing the target sapphire substrate into a specification rectangle, and polishing each surface to be smooth;
step 102: the photoetching process comprises the following steps: forming a chip pattern on the sapphire substrate in step 101, coating a photoresist on the substrate as a thin film, and then exposing and developing the photoresist using a photolithography machine, thereby forming a chip pattern of a micrometer scale;
step 103: vapor deposition technique: depositing various materials on the surface of a chip, using a vapor deposition technology to manufacture red, green and blue LEDs on the surface of the chip, heating gaseous materials to high temperature, generating required materials through chemical reaction, and then depositing the materials on the surface of the chip to form an LED structure;
step 104: and (3) a metallization process: depositing a metal material on the surface of the chip by using a vacuum deposition or electron beam evaporation technology, and respectively depositing a metal electrode material on the anode and the cathode of the LED chip;
step 105, fixing and packaging a glass protection plate on the uppermost layer;
step 106, stacking the chips subjected to encapsulation protection in the step 105 for standby;
step 2, cutting the chip, namely cutting the chip obtained in the step 1 in a longitudinal and transverse cutting mode, enabling laser to walk in a longitudinal and transverse direction, and cutting to obtain a single Mini LED chip with a target size;
step 3, etching a target substrate, namely etching the target substrate according to a target array N1×N2, wherein N1 and N2 are integers larger than or equal to 2, transversely etching N1 and longitudinally etching N2, the target substrate is a glass plate, and etching the target substrate in a transverse and longitudinal mode according to the single Mini LED chip size nS1×nS2 obtained by cutting in the step 1 and the number of array rows and columns required by the target, so that a bearing area of the single Mini LED chip is isolated, wherein the bearing area is consistent with the size of the single Mini LED chip;
step 4, taking the chips, namely taking single Mini LED chips with the number P at one time by using a mechanical arm, and simultaneously taking single Mini LED chips with the number smaller than the number of the N1 and the N2 in the step 2 by using the mechanical arm;
and 5, placing chips, namely placing the P single Mini LED chips on a rectangular area which is cut off by etching on a target substrate, and placing the chips diagonally until the Mini LED array is manufactured.
2. The method for preparing a Mini LED array by using the mechanical transfer technology according to claim 1, wherein the dicing in the step 2 is based on the chips prepared in the step 1, the stacked chips in the step 106 are subjected to the number of dicing in the longitudinal and transverse directions and the distance S1 or S2 moved after dicing according to the required size of the individual Mini LED chips, so as to obtain rectangular individual Mini LED chips of ns1×ns2, where n is an integer greater than 0, and after dicing, the upper package glass protection plate is removed by laser.
3. The method for preparing the Mini LED array by using the mechanical transfer technology according to claim 1, wherein the specific operation of the step 5 is as follows: and the mechanical arm rotates by +/-45 degrees, then performs visual identification, and is arranged in a bearing area on the target substrate.
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| CN112234029A (en) * | 2020-09-14 | 2021-01-15 | 佛山市国星半导体技术有限公司 | Cutting method of mini LED chip |
| WO2022151886A1 (en) * | 2021-01-15 | 2022-07-21 | 华为技术有限公司 | Chip transfer method, wafer, and transfer head for grabbing chip |
| CN113793884A (en) * | 2021-09-15 | 2021-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of Mini-LED display module |
| CN114864622A (en) * | 2022-05-11 | 2022-08-05 | 福建华佳彩有限公司 | Mini & Micro-LED bulk transfer method |
| CN115911018A (en) * | 2022-11-03 | 2023-04-04 | 长春希达电子技术有限公司 | Wafer-level high-precision low-crosstalk LED microarray preparation method |
| CN115832125A (en) * | 2022-12-19 | 2023-03-21 | 武汉大学 | Programmable transfer method of three-primary-color micro-LED chip |
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