WO2022024648A1 - Procédé de fabrication de dispositif à semi-conducteurs et adhésif en film - Google Patents

Procédé de fabrication de dispositif à semi-conducteurs et adhésif en film Download PDF

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Publication number
WO2022024648A1
WO2022024648A1 PCT/JP2021/024765 JP2021024765W WO2022024648A1 WO 2022024648 A1 WO2022024648 A1 WO 2022024648A1 JP 2021024765 W JP2021024765 W JP 2021024765W WO 2022024648 A1 WO2022024648 A1 WO 2022024648A1
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WO
WIPO (PCT)
Prior art keywords
adhesive
film
circuit member
main body
connection portion
Prior art date
Application number
PCT/JP2021/024765
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English (en)
Japanese (ja)
Inventor
恵子 上野
慎 佐藤
Original Assignee
昭和電工マテリアルズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 昭和電工マテリアルズ株式会社 filed Critical 昭和電工マテリアルズ株式会社
Priority to JP2022540095A priority Critical patent/JPWO2022024648A1/ja
Priority to KR1020237005431A priority patent/KR20230043890A/ko
Priority to CN202180058244.3A priority patent/CN116195040A/zh
Publication of WO2022024648A1 publication Critical patent/WO2022024648A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Definitions

  • the present disclosure relates to a method for manufacturing a semiconductor device and a film-like adhesive.
  • FC connection method A flip-chip connection method (FC connection method) may be adopted in which a conductive protrusion called a bump is formed on a semiconductor chip or a wiring circuit board to directly connect the semiconductor chip and the wiring circuit board.
  • COB Chip On Board
  • BGA Bit Grid Array
  • CSP Chip Size Package
  • FC connection It is a method.
  • the FC connection method is also widely used in a COC (Chip On Chip) type connection method in which bumps or wirings are formed on a semiconductor chip and the semiconductor chips are connected to each other.
  • COW Chip On Wafer
  • WOW wafer On Wafer
  • the present disclosure includes attaching a film-like adhesive for sealing a connection portion between a semiconductor chip having a connection portion and another circuit member having a connection portion to the semiconductor chip or a semiconductor wafer.
  • the present invention relates to a method for suppressing residual voids in an adhesive layer formed from a film-like adhesive in the case of manufacturing a semiconductor device by the method.
  • One aspect of the present disclosure is a first circuit member having a first connecting portion provided on one main surface of a first main body portion and the first main body portion, and the first main body portion.
  • the step of preparing a circuit member with an adhesive having a film-like adhesive attached to the main surface on the side of the first connection portion, and the circuit member with the adhesive are the second main body portion and the second main body.
  • the film-like adhesive is superposed on the second circuit member having the second connection portion provided on the main surface of the portion in the direction of being located on the second circuit member side, and the first circuit member.
  • the adhesive layer which is the film-like adhesive cured with the first circuit member by heating and pressurizing the laminate having the film-like adhesive and the second circuit member, and the second circuit.
  • a method for manufacturing a semiconductor device which comprises a step of forming a body.
  • the first circuit member is a semiconductor chip or a semiconductor wafer
  • the second circuit member is a wiring circuit board, a semiconductor chip or a semiconductor wafer.
  • the circuit member with an adhesive is provided with a semiconductor chip or semiconductor wafer having the first connection portion provided on one main surface of the main body portion and the main body portion, and the first connection portion of the main body portion.
  • the film-like adhesive is applied to the main body portion. It is prepared by a method that involves affixing the first connection to the provided main surface.
  • the film-like adhesive contains an epoxy resin, a curing agent and a flux agent.
  • the melt viscosity of the film-like adhesive at 80 ° C. was 4000 Pa ⁇ s or more and 10,000 Pa ⁇ s or less before the heat treatment, and after the heat treatment. It is 11000 Pa ⁇ s or less.
  • Another aspect of the present disclosure is a first circuit member having a first connecting portion provided on one main surface of the first main body and the first main body, and the first main body.
  • the step of preparing a circuit member with an adhesive having a film-like adhesive attached to the main surface of the portion on the side of the first connection portion, and the circuit member with the adhesive are attached to the second main body portion and the second main body portion.
  • the film-like adhesive is superposed on the second circuit member having the second connection portion provided on the main surface of the main body portion in the direction of being located on the second circuit member side, and the first By heating and pressurizing the circuit member, the film-like adhesive, and the laminate having the second circuit member, the first circuit member, the adhesive layer which is the film-like adhesive cured, and the second.
  • the first connection portion and the second connection portion are joined to each other, and the first connection portion and the second connection portion are sealed by the adhesive layer.
  • a semiconductor device is manufactured, wherein the first circuit member is a semiconductor chip or a semiconductor wafer, and the second circuit member is a wiring circuit board, a semiconductor chip, or a semiconductor wafer.
  • a film-like adhesive used in the method.
  • another aspect of the present disclosure provides the application or use of the film-like adhesive for manufacturing semiconductor devices by the above methods.
  • the film-like adhesive contains an epoxy resin, a curing agent and a flux agent.
  • the melt viscosity of the film-like adhesive at 80 ° C. was 4000 Pa ⁇ s or more and 10,000 Pa ⁇ s or less before the heat treatment, and after the heat treatment. It is 11000 Pa ⁇ s or less.
  • the semiconductor chip or semiconductor wafer is provided with a film-like adhesive that is interposed between a semiconductor chip having a connection portion and another circuit member having a connection portion to seal the connection portion.
  • a method for suppressing residual voids in an adhesive layer formed from a film-like adhesive in the case of manufacturing a semiconductor device by a method including sticking is provided.
  • FIG. 1 is a process sectional view schematically showing an example of a method of manufacturing a semiconductor device.
  • a first circuit member 10 having a first connection portion 10B is prepared.
  • the first circuit member 10 can be a semiconductor chip or a semiconductor wafer.
  • the first connection portion 10B is a solder ball bump.
  • the substrate 1 is a semiconductor substrate, and can be an elemental semiconductor composed of elements of the same type such as silicon and germanium, or a substrate containing a compound semiconductor such as gallium arsenide and indium phosphide.
  • the circuit member 15 with an adhesive is formed. It is formed.
  • the film-like adhesive 40 is, for example, a semiconductor chip or a semiconductor wafer having a first connecting portion 10B provided on one main surface 10S of the first main body portion 10A and the first main body portion 10A.
  • the first main body 10A is formed by pressurizing a laminate having the circuit member 10 and the film-like adhesive 40 laminated on the main surface 10S at 60 to 100 ° C. for 30 seconds to 10 minutes. It is attached to the main surface 10S on the first connection portion 10B side of the above.
  • the film-like adhesive 40 can be attached to the main surface 10S by, for example, heat pressing, roll laminating, or vacuum laminating.
  • the area of the supplied film-shaped adhesive 40 and the thickness of the film-shaped adhesive 40 are appropriately set according to the size of the first circuit member 10, the height of the first connecting portion 10B, and the like.
  • the heating temperature for attaching the film-shaped adhesive 40 to the first main body portion 10A may be 60 to 90 ° C.
  • the pressurizing time for attaching the film-like adhesive 40 to the first main body portion 10A may be 1 minute or more, 9 minutes or less, 8 minutes or less, 7 minutes or less, 6 minutes or less, or 5 minutes. It may be as follows. According to the application conditions including the heating temperature and the pressurization time, the film-like adhesive 40 showing the melt viscosity described later is used, and voids due to the application are less likely to occur, and the curing reaction of the film-like adhesive 40 Progress can be suppressed.
  • the pressure for applying the film-like adhesive 40 to the first main body portion 10A may be, for example, 0.01 to 1.0 MPa.
  • the first circuit member 10 is a semiconductor chip
  • a semiconductor wafer having a first connection portion 10B provided on one main surface of the main body portion and the main body portion and a first connection portion 10B of the main body portion are provided.
  • the film-like adhesive 40 is first formed on the main body.
  • the first main body portion 10A is individualized by a method including sticking to the main surface provided with the connection portion 10B of the semiconductor wafer and dicing the main body portion of the semiconductor wafer together with the film-like adhesive 40.
  • the semiconductor chip (first circuit member 10) and the adhesive circuit member 15 including the film-like adhesive 40 may be formed.
  • the film-like adhesive 40 may be attached to the semiconductor chip that has been individualized by dicing.
  • the circuit member 15 with an adhesive is formed into a film on the second circuit member 20 having the second connection portion 20B provided on the main surface of the second main body portion 20A and the second main body portion 20A.
  • a semiconductor device 101 which is a junction having a first circuit member 10, an adhesive layer 40a, and a second circuit member 20, is formed.
  • the adhesive layer 40a is a cured film-like adhesive.
  • the first connection portion 10B and the second connection portion 20B are metal-bonded so as to be electrically connected.
  • the first connecting portion 10B and the second connecting portion 20B are sealed by the adhesive layer 40a.
  • the adhesive layer 40a which is a cured product of the film-like adhesive, fills the gap between the first circuit member 10 and the second circuit member 20.
  • the second circuit member 20 can be a wiring circuit board, a semiconductor chip, or a semiconductor wafer.
  • the second main body 20A is an insulating substrate containing, for example, glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine and the like as a main component. May be good.
  • the second connection portion 20B may be a wiring formed by removing a part of the metal film by etching.
  • Connections such as the first connection 10B and the second connection 20B are metal layers containing one or more metals selected from, for example, gold, silver, copper, solder, nickel, tin, and lead. There can be.
  • the main component of the solder may be, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, or tin-silver-copper.
  • the metal constituting the connecting portion may be gold, silver, copper or solder, may be silver, copper or solder, may be copper or solder, or may be solder.
  • the connection portion may be a metal layer formed by plating.
  • the connecting portion may be a single layer or may include a plurality of metal layers.
  • the pressure load for forming the joint takes into consideration the variation in the number and height of the first connection portion 10B, and the amount of deformation of the first connection portion 10B and the second connection portion 20B due to the pressurization.
  • the heating temperature for forming the joint is set to a temperature at which a metal joint is formed between the first connection portion 10B and the second connection portion 20B, and the temperature is usually set to a temperature at which the first connection portion 10B is formed. Is above the melting point of.
  • the heating temperature may be 230 ° C. or higher, 240 ° C. or higher, or 300 ° C. or lower.
  • the heating and pressurizing time for forming the bonded body may be 20 seconds or less, 10 seconds or less, or 5 seconds or less, for example, when the surface of the first connecting portion 10B is formed of solder. ..
  • the heating and pressurizing time may be 60 seconds or less.
  • the heating and pressurizing time is usually 1 second or longer.
  • the heating temperature for forming the bonded body may be higher than the reaction starting temperature of the film-shaped adhesive.
  • the formed bonded body may be further heated in an oven or the like. This heating can further enhance connection reliability and insulation reliability.
  • the heating temperature and time for that purpose are set so that the curing of the film-like adhesive proceeds sufficiently.
  • the laminate may be pressurized by atmospheric pressure to form a bonded body.
  • the heat of the crimping machine is difficult to transfer to the adhesive (fillet) protruding from the side surface of the connection part, so the joint is further heated in order to sufficiently cure the adhesive. It may be necessary to do.
  • the bonded body By heating the bonded body while pressurizing it with atmospheric pressure, the residual voids can be suppressed more effectively.
  • Pressurization by atmospheric pressure is also advantageous in that when a bonded body is formed via a temporary crimping body as described later, a plurality of temporary crimping bodies can be heated and pressurized at once.
  • Pressurization by atmospheric pressure is also excellent from the viewpoint of fillet suppression. Fillet suppression is important for the tendency of semiconductor devices to become smaller and denser.
  • the pressure for pressurization may be, for example, more than atmospheric pressure and 1 MPa or less, or 0.05 to 0.5 MPa.
  • Examples of devices for pressurization by atmospheric pressure include a pressurized reflow furnace and a pressurized oven.
  • the atmosphere for pressurization is not particularly limited, but may be an atmosphere containing, for example, air, nitrogen, formic acid, and the like.
  • the bonded body formed by the crimping machine may be further heated while being pressurized by atmospheric pressure.
  • the heating temperature for that purpose may be higher than the melting point of at least one of the melting point of the first connecting portion 10B and the melting point of the second connecting portion 20B.
  • the laminated body having the first circuit member 10, the film-like adhesive 40 and the second circuit member 20 is brought into contact with the melting point of the first connecting portion 10B and the melting point of the second connecting portion 20B.
  • the temporary crimping body is formed by pressurizing while heating to a lower temperature, and the temporary crimping body is more than the melting point of at least one of the melting point of the first connecting portion 10B or the melting point of the second connecting portion 20B. It may include forming a conjugate by pressurizing with high heating.
  • a circuit member with an adhesive having a semiconductor chip separated on a dicing tape is picked up, adsorbed on a crimping tool of a crimping machine, and temporarily crimped to a second circuit member.
  • the first connecting portion 10B and the second connecting portion 20B facing each other may be in contact with each other.
  • the load for temporary crimping may be, for example, 0.009 to 0.2 N per 1st connection portion 10B. When the pressure is in this range, the residual voids are particularly likely to be effectively suppressed.
  • the pressurizing time for temporary crimping may be, for example, 5 seconds or less, 3 seconds or less, or 2 seconds or less.
  • a crimping machine such as a flip-chip bonder may be used for heating and pressurizing for forming the bonded body following the formation of the temporary crimped body.
  • a crimping machine different from the crimping machine used for forming the temporary crimping body may be used.
  • the pressurizing load for forming the joint may be, for example, 0.009 to 0.2 N per 10B of one first connection portion.
  • the plurality of semiconductor chips are stacked one by one and temporarily crimped, and then the plurality of stacked semiconductor chips are collectively heated.
  • the bonded body may be formed by pressurizing.
  • ⁇ Semiconductor device> 2, 3 and 4 are schematic cross-sectional views showing another example of a semiconductor device that can be manufactured by the above illustrated method.
  • the semiconductor device 102 (joint) shown in FIG. 2 is different from the semiconductor device 101 of FIG. 1 in that the first connection portion 10B is a print bump.
  • the semiconductor device 103 shown in FIG. 3 the point that the second circuit member 20 is a wiring circuit board and the second main body 20A has a solder resist 7 provided on the board 1 is the semiconductor device of FIG. Different from 101.
  • the semiconductor device 200 shown in FIG. 4 is an example of a semiconductor device in which TSV (Through Silicon Via) technology is adopted.
  • the semiconductor device 200 includes a circuit member 21 having a wiring formed on the interposer and one of the main surfaces, a first-layer circuit member 11 and a second-layer circuit member 12 stacked on the circuit member 21 in order.
  • a third-layer circuit member 13 is provided.
  • the second main body portion 21A is an interposer, and the second connection portion 21B is a wiring provided on the interposer.
  • the circuit members 11, 12 and 13 are on one main surface of the main body portion 10A having the substrate 1, the through electrode 5 penetrating the substrate 1, and the wiring 3 provided on the through electrode 5, and the main body portion 10A, respectively.
  • connection portion 10B It is a semiconductor chip having a connection portion 10B provided in the above.
  • connection portion 21B wiring
  • the semiconductor chip (circuit member 11) of the first layer and the circuit member 21 flip. It is chip-connected.
  • the gap between the first layer semiconductor chip (circuit member 11) and the interposer (main body portion 21A) is filled with an adhesive layer 40a which is a cured film-like adhesive.
  • the first-layer semiconductor chip (circuit member 11) is connected to the second-layer semiconductor chip (circuit member 12) via a connecting portion.
  • the second-layer semiconductor chip (circuit member 12) is connected to the third-layer semiconductor chip (circuit member 13) via a connecting portion.
  • Wiring 3 provided on the front and back of each semiconductor chip is connected to each other by a through electrode 5 penetrating the substrate 1.
  • the material of the through electrode 5 may be, for example, copper or aluminum.
  • the gap between the semiconductor chips is filled with an adhesive layer 40a, which is a cured film-like adhesive.
  • the semiconductor chip of the first layer is used as the first circuit member, and the circuit member having an interposer is used as the second circuit member in the above example.
  • Manufactured by a method comprising forming a junction by such a method and forming a junction by the method according to the above example using two semiconductor chips as a first circuit member or a second circuit member. can do.
  • ⁇ Film-like adhesive> An example of a film-like adhesive contains an epoxy resin, a curing agent and a flux agent. This film-like adhesive can be used as the film-like adhesive 40 according to the above example.
  • the melt viscosity of the film-like adhesive at 80 ° C. was 4000 Pa ⁇ s or more and 10,000 Pa ⁇ s or less before the heat treatment, and 11000 Pa ⁇ s or less after the heat treatment. Is.
  • the melt viscosity here is such that a test piece of a film-like adhesive having a thickness of 400 ⁇ 50 ⁇ m is sandwiched between circular parallel plates having a diameter of 8 mm, and a temperature rise rate of 10 ° C./min is applied while giving a strain of 1% at a frequency of 10 Hz. It is a value measured by a method of measuring the melt viscosity (complex viscosity) while raising the temperature from 35 ° C. to 150 ° C. and reading the melt viscosity at 80 ° C. from the graph showing the relationship between the obtained melt viscosity and the temperature. ..
  • the test piece may be a laminate formed by two or more film-like adhesives.
  • the melt viscosity of the film-like adhesive before heat treatment at 80 ° C. for 5 minutes at 80 ° C. is 4000 Pa ⁇ s or more and 10,000 Pa ⁇ s or less
  • the uneven surface including the connection portion is covered with a film in the step of applying the film-like adhesive.
  • the shape adhesive can be embedded, thereby suppressing the residual voids.
  • the melt viscosity of the film-like adhesive after heat treatment at 80 ° C. for 5 minutes at 80 ° C. is 11000 Pa ⁇ s or less
  • the film-like adhesive after receiving the thermal history for application maintains an appropriate fluidity.
  • the melt viscosity of the film-like adhesive after heat treatment at 80 ° C. for 5 minutes at 80 ° C. may be 10500 Pa ⁇ s or less, 4000 Pa ⁇ s or more, or 5000 Pa ⁇ s or more. good.
  • the rate of increase in the melt viscosity of the film-like adhesive at 80 ° C. after the heat treatment at 80 ° C. for 5 minutes was 50% or less with respect to the melt viscosity of the film-like adhesive after the heat treatment at 80 ° C. for 5 minutes. You may. Since the increase rate of the melt viscosity due to the heat treatment is small, the residual voids in the heating and pressurizing steps for forming the bonded body can be suppressed more remarkably.
  • the rate of increase in melt viscosity at 80 ° C. may be 1% or more, or 5% or more.
  • the rate of increase in the melt viscosity at 80 ° C. is calculated by the following formula.
  • Increase rate of melt viscosity ⁇ ( ⁇ 1- ⁇ 0) / ⁇ 0 ⁇ ⁇ 100
  • the curing reaction rate of the film-like adhesive after heat treatment at 80 ° C. for 5 minutes may be 1% or less. Thereby, the residual voids in the heating and pressurizing steps for forming the bonded body can be suppressed more remarkably.
  • the rate of increase in the melt viscosity at 80 ° C. tends to be 50% or less.
  • the curing reaction rate may be 0% or more, or 0.1% or more.
  • the calorific value due to the curing reaction in the film-shaped adhesive before the heat treatment is ⁇ H1 (J / g)
  • the calorific value due to the curing reaction in the film-shaped adhesive after the heat treatment is ⁇ H2 (J / g).
  • Curing reaction rate (%) ⁇ ( ⁇ H1- ⁇ H2) / ⁇ H1 ⁇ ⁇ 100 It is a value calculated by.
  • ⁇ H1 and ⁇ H2 are obtained by differential scanning calorimetry under the conditions of a heating rate of 20 ° C./min and a temperature range of 30 to 300 ° C.
  • the measurement atmosphere can be air or nitrogen.
  • ⁇ H2 is measured using a sample of a film-like adhesive that has been heat-treated using a vacuum laminator at 80 ° C. for 5 minutes while applying a pressure of 0.5 MPa.
  • the amount of the sample may be, for example, about 10 mg.
  • the epoxy resin contained in the film-shaped adhesive is, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type. It is selected from epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin and various polyfunctional epoxy resins. These can be used alone or in combination of two or more.
  • the weight average molecular weight of the epoxy resin is usually less than 10,000.
  • the content of the epoxy resin may be, for example, 5 to 75% by mass, 10 to 50% by mass, or 15 to 35% by mass based on the total mass of the film-shaped adhesive.
  • the curing agent contained in the film-shaped adhesive contains, for example, at least one selected from an imidazole-based curing agent, a phenol resin-based curing agent, an acid anhydride-based curing agent, an amine-based curing agent, and a phosphine-based curing agent.
  • the imidazole-based curing agent, the phenol resin-based curing agent, the acid anhydride-based curing agent, and the amine-based curing agent show flux activity that suppresses the formation of an oxide film at the connection portion, and improve the connection reliability and insulation reliability. Can contribute to.
  • imidazole-based curing agents examples include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole.
  • the imidazole-based curing agent is 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine isocyanuric acid, 2-phenyl-4,5-dihydroxymethylimidazole or a combination thereof. If there is, the increase in the melt viscosity of the film-like adhesive due to the heat treatment is likely to be appropriately suppressed.
  • the imidazole-based curing agent may be a microencapsulated latent curing agent.
  • the content of the imidazole-based curing agent may be 5 parts by mass or less, or 4 parts by mass or less, or 1 part by mass or more, based on 100 parts by mass of the epoxy resin. ..
  • the imidazole-based curing agent may be combined with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.
  • Phenol resin-based curing agents are compounds having two or more phenolic hydroxyl groups, and examples thereof include phenol novolac resin, cresol novolak resin, phenol aralkyl resin, cresolnaphthol formaldehyde polycondensate, and triphenylmethane-type polyfunctional phenol. Examples include resins and various polyfunctional phenolic resins. These can be used alone or in combination of two or more.
  • the equivalent ratio (phenolic hydroxyl group / epoxy group, molar ratio) of the phenol resin-based curing agent to the epoxy resin is 0.3 to 1.5, 0.4 from the viewpoint of good curability, adhesiveness and storage stability. It may be ⁇ 1.0 or 0.5 to 1.0. When the equivalent ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved. When the equivalent ratio is 1.5 or less, unreacted phenolic hydroxyl groups do not remain excessively, the water absorption rate is suppressed to a low level, and the insulation reliability tends to be improved.
  • Examples of the acid anhydride-based curing agent include methylcyclohexanetetracarboxylic acid dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid dianhydride, and ethylene glycol bisuanhydrotrimeritate. These can be used alone or in combination of two or more.
  • the equivalent ratio of the acid anhydride-based curing agent to the epoxy resin is 0.3 to 1.5, 0 from the viewpoint of good curability, adhesiveness and storage stability. It may be .4 to 1.0, or 0.5 to 1.0. When the equivalent ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved. When the equivalent ratio is 1.5 or less, unreacted acid anhydride does not remain excessively, the water absorption rate is suppressed to a low level, and the insulation reliability tends to be improved.
  • amine-based curing agent for example, dicyandiamide can be used.
  • the equivalent ratio (amine / epoxy group, molar ratio) of the amine-based curing agent to the epoxy resin is 0.3 to 1.5 from the viewpoint of good curability, adhesiveness and storage stability, and 0.4 to 1. It may be 0 or 0.5 to 1.0.
  • the equivalent ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved.
  • the equivalent ratio is 1.5 or less, the unreacted amine does not remain excessively, and the insulation reliability tends to be improved.
  • phosphine-based curing agents include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate.
  • the content of the phosphine-based curing agent may be 0.1 to 10 parts by mass or 0.1 to 5 parts by mass with respect to 100 parts by mass of the epoxy resin.
  • the content of the phosphine-based curing agent is 0.1 parts by mass or more, the curability tends to be improved.
  • the content of the phosphine-based curing agent is 10 parts by mass or less, the adhesive is less likely to be cured before the metal bond is formed, and poor connection tends to be less likely to occur.
  • a phosphine-based curing agent may be combined with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.
  • the flux agent contained in the film-shaped adhesive may be, for example, one kind of compound having a group represented by the formula (1) alone, or a combination of two or more kinds.
  • R 1 represents an electron donating group.
  • electron donating groups include alkyl groups, hydroxyl groups, amino groups, alkoxy groups, and alkylamino groups.
  • the electron donating group may be an alkyl group, a hydroxyl group or an alkoxyl group, or may be an alkyl group.
  • the alkyl group may be an alkyl group having 1 to 10 carbon atoms or an alkyl group having 1 to 5 carbon atoms.
  • the alkyl group may be linear or branched, or may be linear. When the alkyl group is linear, the carbon number of the alkyl group may be less than or equal to the carbon number of the main chain containing the carboxylic acid from the viewpoint of steric damage.
  • the alkoxy group may be an alkoxy group having 1 to 10 carbon atoms or an alkoxy group having 1 to 5 carbon atoms.
  • the alkyl group portion of the alkoxy group may be linear or branched, or may be linear. When the alkyl group portion of the alkoxy group is linear, the carbon number may be less than or equal to the carbon number of the main chain containing the carboxylic acid from the viewpoint of steric hindrance.
  • the alkylamino group may be a monoalkylamino group or a dialkylamino group.
  • the monoalkylamino group may be a monoalkylamino group having 1 to 10 carbon atoms or a monoalkylamino group having 1 to 5 carbon atoms.
  • the alkyl group portion of the monoalkylamino group may be linear or branched, or may be linear.
  • the dialkylamino group may be a dialkylamino group having 1 to 20 carbon atoms or a dialkylamino group having 1 to 10 carbon atoms.
  • the alkyl group portion of the dialkylamino group may be linear or branched, or may be linear.
  • the flux agent may be a dicarboxylic acid compound having two carboxyl groups. Compared with a monocarboxylic acid having one carboxyl group, the dicarboxylic acid compound is less likely to volatilize even at a high temperature at the time of connection, and the generation of voids can be further suppressed.
  • a dicarboxylic acid compound is used, it is possible to further suppress an increase in the viscosity of the adhesive during storage, connection work, etc., as compared with the case where a compound having three or more carboxyl groups is used. As a result, the connection reliability of the semiconductor device can be further improved.
  • the flux agent may contain a dicarboxylic acid compound represented by the following formula (2). According to the flux agent containing the dicarboxylic acid compound represented by the following formula (2), the reflow resistance and connection reliability of the semiconductor device can be further improved.
  • R 1 represents an electron donating group
  • R 2 represents a hydrogen atom or an electron donating group
  • n represents an integer of 0 to 10.
  • N in the equation (2) may be an integer of 2 to 10 or an integer of 0 to 8.
  • n 10 or less, the flux activity is expressed in a shorter time, and further excellent connection reliability can be obtained particularly when the connection time is short.
  • n 2 or more, it is difficult to volatilize even at a high temperature at the time of connection, and the generation of voids can be further suppressed.
  • R 2 may be a hydrogen atom or an electron donating group.
  • R 2 is a hydrogen atom
  • the melting point tends to be low, and the connection reliability (solder wetting property) may be improved.
  • the melting point of a flux agent in which R 1 and R 2 are methyl groups tends to be higher than the melting point of a flux agent in which one of R 1 and R 2 is a methyl group.
  • the melting point of the flux agent may be 150 ° C. or lower, 140 ° C. or lower, or 130 ° C. or lower. When the melting point of the flux agent is low, the flux activity is likely to be sufficiently developed before the curing reaction between the epoxy resin and the curing agent occurs, whereby a semiconductor device having further excellent connection reliability can be obtained.
  • the melting point of the flux agent may be 25 ° C. or higher, or 50 ° C. or higher.
  • the melting point of the flux compound can be measured, for example, by attaching a capillary tube filled with a sample to a double-tube thermometer and heating the flux compound in a warm bath.
  • the flux agent is, for example, at least one selected from the group consisting of succinic acid, 2-methylglutaric acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid and dodecanedioic acid. It may contain a compound.
  • the content of the flux agent may be 0.5 to 10% by mass or 0.5 to 5% by mass based on the total mass of the film-shaped adhesive.
  • the film-like adhesive may further contain a polymer component, if necessary.
  • the film-like adhesive containing a polymer component is more excellent in heat resistance and film forming property.
  • polymer components examples include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyether sulfone resin, polyetherimide resin, polyvinyl acetal resin, and urethane resin. And acrylic rubber.
  • the high molecular weight component may be a phenoxy resin, a polyimide resin, an acrylic rubber, a cyanate ester resin or a polycarbodiimide resin, and may be a phenoxy resin, a polyimide resin or an acrylic rubber. There may be.
  • These polymer components can be used alone or in combination of two or more. In the present specification, the polymer component does not include the above-mentioned epoxy resin.
  • the glass transition temperature (Tg) of the polymer component may be 200 ° C. or lower, 180 ° C. or lower, or 150 ° C. or lower, and is 50 ° C. or higher, from the viewpoint of the adhesiveness of the film-like adhesive to the circuit member. You may.
  • Tg of the polymer component exceeds 200 ° C., it becomes difficult to embed irregularities such as bumps of semiconductor chips, electrodes formed on the substrate, and wiring patterns with an adhesive, so that the effect of suppressing voids becomes relatively small. there is a possibility.
  • the Tg here is a Tg measured using a DSC (DSC-7 type manufactured by PerkinElmer Co., Ltd.) under the conditions of a sample amount of 10 mg, a heating rate of 10 ° C./min, and a measurement atmosphere: air.
  • DSC DSC-7 type manufactured by PerkinElmer Co., Ltd.
  • the weight average molecular weight of the polymer component is usually 10,000 or more.
  • the weight average molecular weight of the polymer component may be 30,000 or more, 40,000 or more, or 50,000 or more in order to exhibit good film forming property by itself.
  • the weight average molecular weight means a value in terms of standard polystyrene as measured by gel permeation chromatography (GPC).
  • the ratio C a / C d (mass ratio) of the epoxy resin content C a to the polymer component content C d is 0.01 to 5, or 0. It may be 0.05 to 3 or 0.1 to 2.
  • the ratio C a / C d is 0.01 or more, better curability and adhesive strength can be obtained.
  • the ratio C a / C d is 5 or less, better film formability can be obtained.
  • the film-like adhesive may contain a filler, if necessary.
  • a filler for example, it is possible to further suppress the generation of voids at the time of connection, reduce the hygroscopicity of the cured product of the adhesive, and the like.
  • the filler may be, for example, an insulating inorganic filler, a whiskers, a resin filler, or a combination thereof.
  • insulating inorganic fillers include glass, silica, alumina, titanium oxide, carbon black, mica and boron nitride.
  • the insulating inorganic filler may be at least one selected from silica, alumina, titanium oxide and boron nitride, and may be at least one selected from silica, alumina and boron nitride.
  • whiskers include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate and boron nitride.
  • the resin filler include a filler made of a resin such as polyurethane and polyimide.
  • the shape, particle size and content of the filler are not particularly limited.
  • the filler may have its physical properties adjusted appropriately by surface treatment.
  • the content of the filler may be 10 to 80% by mass or 15 to 60% by mass based on the total mass of the film-shaped adhesive.
  • the film-like adhesive may contain additives such as an antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, and an ion trapping agent in addition to the components exemplified above. These can be used alone or in combination of two or more.
  • the film-like adhesive is prepared by applying a resin varnish containing, for example, an epoxy resin, a curing agent, a flux agent, and other components added as necessary, and an organic solvent onto a base film that has undergone a mold release treatment. It can be obtained by a method including the above process and the formation of a film-like adhesive on the base film by removing the organic solvent from the coating film by heating.
  • organic solvents used in the preparation of resin varnish include dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, Examples include butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate. These organic solvents can be used alone or in combination of two or more.
  • Stirring and mixing and kneading at the time of preparing the resin varnish can be performed by using, for example, a stirrer, a raider, a three-roll, a ball mill, a bead mill or a homodisper.
  • the base film is not particularly limited as long as it has heat resistance that can withstand the heating conditions when the organic solvent is volatilized.
  • a polyester film such as a polyethylene naphthalate film, a polyimide film or a polyetherimide film may be used.
  • the base film may be a single layer composed of these films, or may be a multilayer film composed of two or more kinds of films.
  • the drying conditions for volatilizing the organic solvent from the coating film of the resin varnish can be, for example, heating at a temperature of 50 to 200 ° C. for 0.1 to 90 minutes.
  • the organic solvent may be removed up to 1.5% by mass or less based on the total mass of the film-like adhesive.
  • the present invention is not limited to the examples exemplified below.
  • the raw materials used to make the film-like adhesive are as follows.
  • E Filler (e-1) Inorganic filler / silica filler (manufactured by Admatex Co., Ltd., trade name "SE2050", average particle size 0.5 ⁇ m) -Epoxy silane treated silica filler (manufactured by Admatex Co., Ltd., trade name "SE2050-SEJ”, average particle size 0.5 ⁇ m) -Acrylic surface-treated nanosilica filler (manufactured by Admatex Co., Ltd., trade name "YA050C-SM", average particle size of about 50 nm) (E-2) Resin filler / organic filler (manufactured by Rohm and Haas Japan Co., Ltd., trade name "EXL-2655", core-shell type organic fine particles)
  • a mixture containing an amount of methyl ethyl ketone having a solid content concentration of 63% by mass and beads having the same weight as the solid content (beads having a diameter of 0.8 mm and beads having a diameter of 2.0 mm) was prepared in a bead mill (Fritsch Japan). The mixture was stirred for 30 minutes with a planetary fine pulverizer P-7). 1.7 g of phenoxy resin (ZX1356) was added to the stirred mixture, and the mixture was stirred again with a bead mill for 30 minutes. Then, the beads used for stirring were removed by filtration to obtain a resin varnish.
  • the obtained resin varnish is coated on a base film (manufactured by Teijin DuPont Film Co., Ltd., trade name "Purex A53") with a small precision coating device (Yasui Seiki), and the coating film is applied in a clean oven (clean oven). It was dried by heating at 70 ° C. for 10 minutes using (manufactured by ESPEC) to obtain a film-like adhesive.
  • Examples 2 to 4 and Comparative Examples 1 to 3 The film-like adhesives of Examples 2 to 4 and Comparative Examples 1 to 3 were prepared in the same manner as in Example 1 except that the types and blending amounts of the raw materials used were changed as shown in Table 1 below. ..
  • melt Viscosity Melt Viscosity Before Heat Treatment
  • the film-like adhesive was laminated while heating at 80 ° C. to prepare a test piece having a thickness of 400 ⁇ m.
  • This test piece is sandwiched between two parallel plates with a diameter of 8 cm, and the melt viscosity (complex viscosity) of the test piece is used using a rotary viscoelasticity measuring device (ARES, manufactured by TA Instruments Co., Ltd.).
  • the melt viscosity was measured in the dynamic temperature ram measurement mode at a frequency of 10 Hz with a 1% strain and a heating rate of 10 ° C./min while raising the temperature from 35 ° C. to 150 ° C.
  • melt viscosity at 80 ° C. was determined.
  • Melt Viscosity After Heat Treatment The film-like adhesive was laminated while heating at 80 ° C. to prepare a test piece having a thickness of 400 ⁇ m.
  • the test piece was heat-treated using a vacuum laminator (manufactured by Nikko Materials) at 80 ° C. for 5 minutes while applying a pressure of 0.5 MPa.
  • the melt viscosity of the test piece after the heat treatment at 80 ° C. was measured by the same method as the melt viscosity before the heat treatment.
  • Curing reaction rate after heat treatment Put 10 mg of a film-like adhesive sample in an aluminum pan and use a differential scanning calorimeter (DSC-7 type manufactured by PerkinElmer) to raise the temperature at 20 ° C / min and the temperature range from 30 to 300. The differential scanning calorimetry was performed under the condition of ° C. From the obtained DSC thermogram, the calorific value ⁇ H1 (J / g) due to the curing reaction in the film-like adhesive before the heat treatment was determined. The film-like adhesive was heat-treated using a vacuum laminator (manufactured by Nikko Materials) at 80 ° C. for 5 minutes while applying a pressure of 0.5 MPa, and the heat-treated film-like adhesive sample was used under the same conditions.
  • a vacuum laminator manufactured by Nikko Materials
  • the differential scanning calorimetry was performed to determine the calorific value ⁇ H2 (J / g) due to the curing reaction in the film-like adhesive after the heat treatment.
  • a semiconductor chip (chip size: 7.3 mm x 7.3 mm, thickness 0.05 mm) having solder bumps as a connection part with a film-like adhesive cut out to a size of 8 mm square and a thickness of 0.045 mm.
  • Bump (connection part) height Approximately 45 ⁇ m (total of copper pillar and solder), Number of bumps: 1048 pins, pitch 80 ⁇ m, Product name: WALTS-TEG CC80, made by WALTS, vacuum laminator CV130 (made by Nikko Materials) ) At 80 ° C. for 5 minutes while applying a pressure of 0.5 MPa.
  • a semiconductor chip to which a film-like adhesive is attached is attached to another semiconductor chip (chip size: 10 mm ⁇ 10 mm, thickness 0.1 mm, connection metal: Au, product name: WALTS-TEG IP80, manufactured by WALTS).
  • the semiconductor chips are stacked in a direction in which the film-like adhesive is sandwiched between the semiconductor chips, and the semiconductor chips are temporarily crimped to each other by pressurizing at a pressure of 25 N for 3 seconds while heating on a stage at 80 ° C. , A temporary crimp body was obtained.
  • the temporary pressure-bonded body was pressurized at a pressure of 25 N for 5 seconds while being heated to 260 ° C. by a flip-chip bonder on a stage at 80 ° C. to obtain a bonded body in which the connecting portions were joined to each other.
  • the appearance image of the joint was taken by an ultrasonic diagnostic imaging device (Insight-300, manufactured by Insight). From the obtained image, an image of an adhesive layer (cured film-like adhesive) between semiconductor chips was captured by a scanner GT-9300UF (manufactured by EPSON). In the captured image, the void portion was identified by color tone correction and two-gradation using image processing software (Adobe Photoshop (trade name)), and the proportion of the void portion was calculated from the histogram. The area of the entire adhesive layer including the void portion was set to 100 area%. When the area ratio of voids was 5% or less, it was designated as "A”, and when the area ratio of voids was more than 5%, it was designated as "B".

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un dispositif à semi-conducteurs, un élément de circuit avec un adhésif étant préparé par un procédé dans lequel un corps multicouche qui comprend une puce de semi-conducteur ou une tranche de semi-conducteur et un adhésif en film est mis sous pression pendant 30 secondes à 10 minutes, tout en étant chauffé de 60 °C à 100 °C, le liant ainsi à une surface principale. Si l'adhésif en film est soumis à un traitement thermique à 80 °C pendant 5 minutes, la viscosité à l'état fondu de l'adhésif en film à 80 °C est de 4 000 Pa·s à 10 000 Pa·s avant le traitement thermique, tandis que la viscosité à l'état fondu de l'adhésif en film à 80 °C est inférieure ou égale à 11 000 Pa·s après le traitement thermique.
PCT/JP2021/024765 2020-07-31 2021-06-30 Procédé de fabrication de dispositif à semi-conducteurs et adhésif en film WO2022024648A1 (fr)

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CN202180058244.3A CN116195040A (zh) 2020-07-31 2021-06-30 制造半导体装置的方法及膜状黏合剂

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016046299A (ja) * 2014-08-20 2016-04-04 日立化成株式会社 半導体接続部封止用接着剤及びこれを用いた半導体装置、半導体装置の製造方法
JP2019197840A (ja) * 2018-05-10 2019-11-14 デクセリアルズ株式会社 半導体装置の製造方法

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JP5217260B2 (ja) 2007-04-27 2013-06-19 住友ベークライト株式会社 半導体ウエハーの接合方法および半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016046299A (ja) * 2014-08-20 2016-04-04 日立化成株式会社 半導体接続部封止用接着剤及びこれを用いた半導体装置、半導体装置の製造方法
JP2019197840A (ja) * 2018-05-10 2019-11-14 デクセリアルズ株式会社 半導体装置の製造方法

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