WO2022009692A1 - Multiplexeur - Google Patents

Multiplexeur Download PDF

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Publication number
WO2022009692A1
WO2022009692A1 PCT/JP2021/024085 JP2021024085W WO2022009692A1 WO 2022009692 A1 WO2022009692 A1 WO 2022009692A1 JP 2021024085 W JP2021024085 W JP 2021024085W WO 2022009692 A1 WO2022009692 A1 WO 2022009692A1
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WIPO (PCT)
Prior art keywords
filter
elastic wave
resonator
common terminal
electrode fingers
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PCT/JP2021/024085
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English (en)
Japanese (ja)
Inventor
知久 小村
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株式会社村田製作所
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Priority to CN202190000609.2U priority Critical patent/CN219247815U/zh
Publication of WO2022009692A1 publication Critical patent/WO2022009692A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves

Definitions

  • Patent Document 1 discloses as such a multiplexer, a multiplexer composed of a plurality of filters including an elastic wave filter having a leaky wave as a main mode.
  • an object of the present invention is to provide a multiplexer or the like capable of suppressing deterioration of insertion loss in the pass band due to Rayleigh wave ripple of elastic wave resonators.
  • FIG. 1 is a configuration diagram showing an example of a multiplexer according to an embodiment.
  • FIG. 2 is a circuit configuration diagram showing an example of the first filter according to the embodiment.
  • FIG. 3 is a plan view and a cross-sectional view schematically showing the electrode configuration of the elastic wave resonator according to the embodiment.
  • FIG. 4 is a graph showing the relationship between the logarithm and the return loss of the Rayleigh wave ripple.
  • FIG. 5 is a graph showing the relationship between the wavelength ratio and the return loss of Rayleigh wave ripple.
  • FIG. 6 is a graph showing the relationship between IRGAP and the return loss of Rayleigh wave ripple.
  • FIG. 7 is a graph showing the passing characteristics of the first filter according to the comparative example.
  • FIG. 1 is a configuration diagram showing an example of a multiplexer according to an embodiment.
  • FIG. 2 is a circuit configuration diagram showing an example of the first filter according to the embodiment.
  • FIG. 3 is a plan view and a cross-sectional view schematically
  • FIG. 8 is a graph showing the return loss characteristics seen from the common terminal side of the first filter according to the comparative example.
  • FIG. 9 is a graph comparing the return loss characteristics seen from the common terminal side of the first filter according to the example and the comparative example.
  • FIG. 10 is a graph showing the gain characteristics of the amplifier circuit connected to the second filter according to the example and the comparative example.
  • FIG. 11 is a circuit configuration diagram showing a modified example of the first filter according to the embodiment.
  • FIG. 12 is a circuit configuration diagram showing a modified example of the first filter according to the embodiment.
  • the multiplexer 1 is a demultiplexing / combining circuit using an elastic wave filter.
  • the multiplexer 1 includes a common terminal 3 and input / output terminals 4a and 4b as input / output terminals.
  • the input / output terminal 4a is an example of a first input / output terminal
  • the input / output terminal 4b is an example of a second input / output terminal.
  • the multiplexer 1 includes filters 2a and 2b, and one side of each (a side different from the input / output terminals 4a and 4b side) is commonly connected to the common terminal 3.
  • the input / output terminal 4a is provided corresponding to the filter 2a and is connected to the filter 2a inside the multiplexer 1.
  • the input / output terminal 4b is provided corresponding to the filter 2b and is connected to the filter 2b inside the multiplexer 1. Further, the input / output terminals 4a and 4b are connected to an RF signal processing circuit (RFIC: Radio Frequency Integrated Circuit, not shown) outside the multiplexer 1 via an amplifier circuit or the like (not shown).
  • RFIC Radio Frequency Integrated Circuit
  • the filter 2b is a second filter connected between the common terminal 3 and the input / output terminal 4b.
  • the filter 2b is an elastic wave filter using elastic waves (for example, a reception filter), and its pass band is, for example, LTE Band1Rx (2110-2170 MHz).
  • the pass band of the filter 2b overlaps at least a part of the band 0.75 to 0.8 times the pass band of the filter 2a.
  • the pass band of the filter 2b overlaps at least a part of the frequency band from 0.75 times the lower limit frequency of the pass band of the filter 2a to 0.8 times the upper limit frequency of the pass band of the filter 2a. ..
  • FIG. 2 is a circuit configuration diagram showing an example of the first filter (filter 2a) according to the embodiment.
  • the filter 2a has, for example, series arm resonators S1, S2, S3 and S4 connected in series to each other as the plurality of series arm resonators.
  • the series arm resonator S1 is a series arm resonator arranged on the path connecting the common terminal 3 and the input / output terminal 4a, and is connected to the common terminal 3 closest to the common terminal 3 among the plurality of elastic wave resonators in the filter 2a.
  • This is an example of a first elastic wave resonator.
  • the first elastic wave resonator connected closest to the common terminal 3 means that no other resonator is connected on the signal path between the common terminal 3 and the common terminal 3.
  • the filter 2a is, as the plurality of parallel arm resonators, between the parallel arm resonators P1 connected between the node between the series arm resonators S1 and S2 and the ground, and between the series arm resonators S2 and S3.
  • Parallel arm resonator P2 connected between the node and ground
  • parallel arm resonator P3 connected between the node and ground between the series arm resonators S3 and S4, and series arm resonator S4.
  • the series arm resonator S4 is composed of a plurality of (here, two) split resonators in which one resonator is split.
  • IMD Intermodulation Distortion
  • At least the series arm resonator S1 is composed of an IDT electrode that excites an elastic wave whose main component is an SH wave such as a leaky wave.
  • each of the plurality of elastic wave resonators (series arm resonators S1, S2, S3 and S4 and parallel arm resonators P1, P2, P3 and P4) in the filter 2a is mainly composed of SH waves such as leaky waves. It is composed of IDT electrodes that excite elastic waves.
  • Each IDT electrode of the plurality of elastic wave resonators is formed on a substrate having a piezoelectric layer (a substrate having piezoelectricity), and the substrate is a piezoelectric layer in which an IDT electrode is formed on one main surface.
  • the bulk wave sound velocity propagating is faster than the elastic wave sound velocity propagating in the piezoelectric layer. It comprises a bass piezo film in which the propagating bulk wave sound velocity is slower than the elastic wave sound velocity. Since each elastic wave resonator constituting the filter 2a has such a laminated structure, Rayleigh wave ripple is generated in the filter 2a.
  • FIG. 3 is a plan view and a cross-sectional view schematically showing the electrode configuration of the elastic wave resonator 10 according to the embodiment.
  • FIG. 3 illustrates a planar schematic diagram and a schematic cross-sectional view showing the structure of the elastic wave resonator 10 as an example of the plurality of elastic wave resonators in the filter 2a.
  • the elastic wave resonator 10 shown in FIG. 3 is for explaining a typical structure of a plurality of elastic wave resonators in the filter 2a, and the number and length of the plurality of electrode fingers constituting the electrode are explained. Sas, etc. are not limited to this.
  • the elastic wave resonator 10 includes an IDT electrode 11 formed of a piezoelectric substrate 100, an electrode 110, and a protective layer 113, and composed of these components, and a reflector 12.
  • the surface acoustic wave resonator 10 according to the present embodiment is a surface acoustic wave (SAW: Surface Acoustic Wave) resonator composed of an IDT electrode 11, a reflector 12, and a piezoelectric substrate 100.
  • SAW Surface Acoustic Wave
  • the comb-shaped electrode 11B is composed of a plurality of electrode fingers 11b arranged so as to extend in a direction intersecting the elastic wave propagation direction, and a bus bar electrode 11c connecting one ends of the plurality of electrode fingers 11b to each other. There is.
  • the electrode 110 constituting the IDT electrode 11 and the reflector 12 has a laminated structure of the adhesion layer 111 and the main electrode layer 112.
  • the adhesion layer 111 is a layer for improving the adhesion between the piezoelectric substrate 100 and the main electrode layer 112, and for example, Ti is used as the material.
  • the film thickness of the adhesion layer 111 is, for example, 12 nm.
  • the main electrode layer 112 for example, Al containing 1% Cu is used as a material.
  • the film thickness of the main electrode layer 112 is, for example, 162 nm.
  • the piezoelectric substrate 100 is a substrate having a piezoelectric layer in which the IDT electrode 11 and the reflector 12 are arranged on the main surface.
  • the piezoelectric substrate 100 is a piezoelectric substrate having a laminated structure in which a high sound velocity support substrate, a low sound velocity film, and a piezoelectric film (piezoelectric body layer) are laminated in this order.
  • the piezoelectric membrane is made of, for example, a 42 ° Y-cut X-propagated LiTaO 3 piezoelectric single crystal or piezoelectric ceramic.
  • the LiTaO3 piezoelectric single crystal may have a cut angle of 30 ° to 60 °.
  • the SH wave can be used as the main mode.
  • the piezoelectric membrane has a thickness of, for example, 600 nm.
  • the hypersonic support substrate is a substrate that supports the hypersonic film, the piezoelectric film, and the IDT electrode.
  • the high sound velocity support substrate is further a substrate in which the sound velocity of the bulk wave in the high sound velocity support substrate is higher than that of the surface acoustic wave propagating through the piezoelectric film or the elastic wave of the boundary wave, and the elastic surface wave is made into the piezoelectric film and low. It is confined in the part where the sound velocity film is laminated, and functions so as not to leak below the high sound velocity support substrate.
  • the hypersonic support substrate is, for example, a silicon substrate, and the thickness is, for example, 200 ⁇ m.
  • the low sound velocity film is a film in which the sound velocity of the bulk wave in the low sound velocity film is lower than that of the bulk wave propagating in the piezoelectric film, and is arranged between the piezoelectric film and the high sound velocity support substrate. Due to this structure and the property that the energy is concentrated in the medium in which the surface acoustic wave is essentially low sound velocity, the leakage of the surface acoustic wave energy to the outside of the IDT electrode 11 is suppressed.
  • the bass sound film is, for example, a film containing silicon dioxide as a main component, and has a thickness of, for example, 670 nm. It should be noted that a bonding layer made of Ti, Ni, or the like may be included between the low sound velocity films.
  • the low sound velocity film may have a multilayer structure composed of a plurality of low sound velocity materials. According to this laminated structure, it is possible to significantly increase the Q value at the resonance frequency and the antiresonance frequency as compared with the structure in which the piezoelectric substrate 100 is used as a single layer. That is, since a surface acoustic wave resonator having a high Q value can be configured, it is possible to construct a filter having a small insertion loss by using the surface acoustic wave resonator.
  • the high sound velocity support substrate has a structure in which a support substrate and a high sound velocity film in which the sound velocity of the bulk wave propagating is higher than that of the elastic wave of the surface wave or the boundary wave propagating in the piezoelectric film are laminated.
  • the support substrate is made of a piezoelectric material such as sapphire, lithium tantalate, lithium niobate, crystal, alumina, magnesia, silicon nitride, aluminum nitride, silicon carbide, zirconia, cordierite, mulite, steatite, forsterite and the like.
  • Dielectrics such as various ceramics and glass, semiconductors such as silicon and gallium nitride, and resin substrates can be used.
  • the treble velocity film includes various aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon oxynitride, DLC film or diamond, a medium containing the above material as a main component, a medium containing a mixture of the above materials as a main component, and the like. High sonic material can be used.
  • each layer exemplified in the laminated structure of the piezoelectric substrate 100 is an example, and is changed according to the characteristics to be emphasized among the required high frequency propagation characteristics, for example.
  • the reflector 12 is arranged adjacent to the IDT electrode 11 in the elastic wave propagation direction.
  • the reflector 12 is composed of a plurality of reflective electrode fingers 12a arranged so as to extend in a direction intersecting the elastic wave propagation direction, and a bus bar electrode 12c connecting one ends of the plurality of reflective electrode fingers 12a.
  • the center of the electrode finger (for example, the electrode finger 11a) closest to the reflector 12 among the plurality of electrode fingers 11a and 11b, and the IDT electrode 11 among the plurality of reflective electrode fingers 12a.
  • the distance from the center of the closest reflective electrode finger 12a is defined as the IDT-reflector gap (also called IRGAP).
  • the IDT wavelength (also referred to as ⁇ IDT) doubles the repeating pitch of the plurality of electrode fingers 11a and 11b repeated in the direction of elastic wave propagation, such as the electrode finger 11a, the electrode finger 11b, the electrode finger 11a, the electrode finger 11b, and so on. Call).
  • the IDT wavelength is a repeating pitch of the plurality of electrode fingers 11a, and attention is paid only to the plurality of electrode fingers 11b. If this is the case, it can be said that the pitch is repeated for the plurality of electrode fingers 11b. Further, twice the repeating pitch of the plurality of reflecting electrode fingers 12a is defined as the reflector wavelength (also referred to as ⁇ REF).
  • the repeating pitch of the plurality of electrode fingers 11a and 11b is the distance between the electrode finger on the most one end side and the electrode finger on the other end side of the plurality of electrode fingers 11a and 11b in the elastic wave propagation direction, and the plurality of electrodes. It can be obtained as a value divided by the number of fingers 11a and 11b-1.
  • the repeating pitch of the plurality of reflective electrode fingers 12a is a plurality of distances between the reflective electrode finger on the onemost end side and the reflective electrode finger on the other end side of the plurality of reflective electrode fingers 12a in the elastic wave propagation direction. It can be obtained as a value divided by the number of the reflecting electrode fingers 12a of the above-1 finger.
  • the pitches of the plurality of electrode fingers 11a and 11b do not have to be even pitches.
  • the pitch of each of the plurality of reflective electrode fingers 12a does not have to be a uniform pitch. That is, the repeating pitch does not necessarily have to be a constant pitch.
  • the logarithm of the plurality of electrode fingers 11a and 11b is the number of the paired electrode fingers 11a and the electrode fingers 11b, which is approximately half of the total number of the plurality of electrode fingers 11a and 11b.
  • the logarithm is N and the total number of the plurality of electrode fingers 11a and 11b is M
  • M (N + 1) ⁇ 2 is satisfied. That is, the number of regions sandwiched between the tip portion of one of the comb-shaped electrodes 11A and 11B and the other bus bar electrode facing the tip portion corresponds to 0.5 pair.
  • the frequency at which Rayleigh wave ripple is generated in the filter 2a is 0.76 times the frequency included in the pass band of the filter 2a, and is 0.75 to 0.8 times the frequency in consideration of the processing variation of the filter 2a. ..
  • the filter 2b which is commonly connected to the filter 2a and the common terminal 3, has a pass band including the frequency at which the Rayleigh wave ripple is generated in the filter 2a. Therefore, Rayleigh wave ripple occurs in the pass band (Band1Rx) of the filter 2b that overlaps with the frequency 0.75 to 0.8 times the frequency included in the pass band (Band7Rx) of the filter 2a.
  • the reflectance coefficient when the filter 2a is viewed from the common terminal 3 deteriorates (decreases), in other words, the return loss increases.
  • the return loss at the frequency at which the Rayleigh wave ripple occurs is also referred to as the return loss of the Rayleigh wave ripple.
  • the ripple caused by the Rayleigh wave ripple is generated in the pass band of the filter 2b.
  • the return loss of the Rayleigh wave ripple when the filter 2a is viewed from the common terminal 3 increases, and the insertion loss in the pass band of the filter 2b worsens accordingly.
  • the factor deteriorating the insertion loss of the filter 2b is the Rayleigh wave ripple described above, which is the closest to the common terminal 3 among the plurality of elastic wave resonators in the filter 2a.
  • the series arm resonator S1 satisfies at least one of the following conditions (i), (ii) and (iii)
  • the return loss of the Rayleigh wave ripple can be reduced, and thus within the pass band of the filter 2b.
  • the series arm resonator S1 Since the series arm resonator S1 is connected closest to the common terminal 3 among the plurality of elastic wave resonators, the filter 2a and the filter 2b commonly connected at the common terminal 3 among the plurality of elastic wave resonators are the closest. It will be connected soon. This means that the series arm resonator S1 is an elastic wave resonator that most easily affects the filter 2b among the plurality of elastic wave resonators. Therefore, paying attention to the series arm resonator S1, the series arm resonator S1 satisfies at least one of the above (i), the above (ii), and the above (iii), so that the filter 2b can be used. Deterioration of insertion loss in the pass band can be effectively suppressed.
  • FIG. 4 is a graph showing the relationship between the logarithm and the return loss of the Rayleigh wave ripple.
  • ⁇ REF / ⁇ IDT also referred to as wavelength ratio
  • IRGAP is 0.5 times ⁇ REF. That is, here, it is assumed that the series arm resonator S1 does not satisfy the above conditions (i) and (ii).
  • the filter 2a when the filter 2a is viewed from the common terminal 3 by satisfying at least the above condition (iii) in the series arm resonator S1 connected closest to the common terminal 3 among the plurality of elastic wave resonators.
  • the return loss of Rayleigh wave ripple can be reduced. Therefore, it is possible to suppress the deterioration of the insertion loss in the pass band of the filter 2b due to the Rayleigh wave ripple of the elastic wave resonator.
  • FIG. 5 is a graph showing the relationship between the wavelength ratio and the return loss of Rayleigh wave ripple.
  • IRGAP is 0.5 times ⁇ REF
  • the logarithm of a plurality of electrode fingers is 80 pairs. That is, here, it is assumed that the series arm resonator S1 does not satisfy the above conditions (ii) and (iii).
  • FIG. 6 is a graph showing the relationship between IRGAP and the return loss of Rayleigh wave ripple.
  • the wavelength ratio is 1.0
  • the logarithm of the plurality of electrode fingers is 80 pairs. That is, here, it is assumed that the series arm resonator S1 does not satisfy the above conditions (i) and (iii).
  • IRGAP is gradually higher is the return loss of the Rayleigh wave ripple small large, is greater than 0.5 times the IRGAP is lambda REF, specifically, 0 IRGAP of lambda REF. It can be seen that the return loss of the Rayleigh wave ripple is 0.5 dB or less at 6 times (thick dotted line in FIG. 6). As a result, the deterioration of the insertion loss in the pass band of the filter 2b can be kept within about 0.15 dB.
  • the wavelength ratio of the series arm resonator S1 is 1.002
  • the IRGAP is 0.45 times that of ⁇ REF
  • the logarithm of the plurality of electrode fingers 11a and 11b is 150.5 pairs.
  • the child S1 does not satisfy any of the above conditions (i), (ii), and (iii).
  • FIG. 7 is a graph showing the passing characteristics of the first filter (filter 2a) according to the comparative example.
  • FIG. 8 is a graph showing the return loss characteristics seen from the common terminal 3 side of the first filter (filter 2a) according to the comparative example.
  • the filter is as shown by the circled portion of the broken line in FIG. It can be seen that Rayleigh wave ripple occurs in the pass band (Band1Rx) of the filter 2b which overlaps with the frequency of about 0.76 times the frequency included in the pass band (Band7Rx) of 2a. At the frequency at which this Rayleigh wave ripple occurs, the reflectance coefficient when the filter 2a is viewed from the common terminal 3 deteriorates (decreases), in other words, the return loss increases. As described above, it can be seen that the return loss of the Rayleigh wave ripple is large at about 1.7 dB.
  • the series arm resonator S1 has a wavelength ratio of 1.025, an IRGAP of 0.5 times that of ⁇ REF , and a logarithm of a plurality of electrode fingers 11a and 11b having 85 pairs. Satisfies the condition of (i) above.
  • FIG. 9 is a graph comparing the return loss characteristics seen from the common terminal 3 side of the first filter (filter 2a) according to the examples and the comparative examples.
  • FIG. 10 is a graph showing the gain characteristics of the amplifier circuit connected to the second filter (filter 2b) according to the examples and the comparative examples.
  • the series arm resonator S1 satisfies the condition (i) above, it is not shown, but the frequency is about 0.76 times the frequency included in the pass band (Band7Rx) of the filter 2a.
  • the Rayleigh wave ripple generated in the pass band (Band1Rx) of the filter 2b overlapping with the filter 2b becomes smaller. Therefore, as shown in FIG. 9, the return loss of the Rayleigh wave ripple, which is about 1.7 dB in the comparative example (broken line in FIG. 9), is about 0.6 dB in the embodiment (solid line in FIG. 9). It can be seen that there is a great improvement.
  • the series arm resonator S1 connected closest to the common terminal 3 among the plurality of elastic wave resonators satisfies any one of the above conditions (i), (ii), and (iii). It was shown that the deterioration of the insertion loss in the pass band of the filter 2b due to the Rayleigh wave ripple of the elastic wave resonator can be suppressed, but the series arm resonator S1 has the above (i), the above (ii) and Further improvement can be achieved if two of the above two conditions (iii) or all of them are satisfied.
  • 11 and 12 are circuit configuration diagrams showing a modified example of the first filter (filter 2a) according to the embodiment.
  • the filter 2a may include a vertically coupled resonator M1.
  • the filter 2a shown in FIG. 11 includes series arm resonators S1 and S2 and a parallel arm resonator P1 in the same manner as the filter 2a shown in FIG. 2, and connects the series arm resonator S2 and the input / output terminal 4a.
  • a vertically coupled resonator M1 is arranged on the path.
  • at least one elastic wave resonator other than the first elastic wave resonator (here, the series arm resonator S1) among the plurality of elastic wave resonators included in the filter 2a constitutes the longitudinal coupling type resonator M1. ..
  • the longitudinally coupled resonator M1 is a 5-electrode type longitudinally coupled resonator provided with longitudinally coupled resonators N1, N2, N3, N4 and N5, and the at least one elastic wave resonator is a longitudinally coupled resonator. It becomes children N1, N2, N3, N4 and N5.
  • the first elastic wave resonator connected closest to the common terminal 3 is a path connecting the common terminal 3 and the input / output terminal 4a.
  • the series arm resonator S1 is arranged above, in the modified example shown in FIG. 12, the first elastic wave resonator connected closest to the common terminal 3 among the plurality of elastic wave resonators in the filter 2a.
  • the multiplexer 1 includes a common terminal 3, input / output terminals 4a and 4b, a filter 2a connected between the common terminal 3 and the input / output terminal 4a, and a common terminal 3 and an input / output terminal 4b.
  • a filter 2b connected between the two.
  • the pass band of the filter 2b overlaps at least a part of the band 0.75 to 0.8 times the pass band of the filter 2a.
  • the filter 2a includes a plurality of elastic wave resonators, and the first elastic wave resonator connected closest to the common terminal 3 among the plurality of elastic wave resonators is formed on a substrate having a piezoelectric layer.
  • the return loss of the Rayleigh wave ripple when the filter 2a is viewed from the common terminal 3 can be reduced, and the deterioration of the insertion loss in the pass band of the filter 2b due to the Rayleigh wave ripple of the elastic wave resonator can be suppressed. ..
  • the multiplexer 1 may satisfy at least two conditions of the above (i), the above (ii), and the above (iii). Further, for example, the multiplexer 1 may satisfy all the conditions of the above (i), the above (ii), and the above (iii).
  • the return loss of the Rayleigh wave ripple when the filter 2a is viewed from the common terminal 3 can be further reduced, and the deterioration of the insertion loss in the pass band of the filter 2b due to the Rayleigh wave ripple of the elastic wave resonator is further reduced. Can be suppressed.
  • the first elastic wave resonator may be a series arm resonator S1 arranged on a path connecting the common terminal 3 and the input / output terminal 4a, as shown in FIG. 2 or FIG. As shown in FIG. 12, it may be a parallel arm resonator P1 connected between a node on the path connecting the common terminal 3 and the input / output terminal 4a and the ground.
  • the filter 2a may be a ladder type filter as shown in FIG.
  • At least one elastic wave resonator other than the first elastic wave resonator among the plurality of elastic wave resonators may constitute the longitudinal coupling type resonator M1.
  • the multiplexer 1 according to the embodiment of the present invention has been described above, the present invention relates to another embodiment realized by combining arbitrary components in the above embodiment and the above embodiment.
  • the present invention also includes modifications obtained by performing various modifications that can be conceived by those skilled in the art without departing from the gist of the present invention.
  • the multiplexer 1 can be applied to a communication device including a high frequency front end circuit and further a high frequency front end circuit.
  • the present invention also includes various devices incorporating a high-frequency front-end circuit to which the multiplexer 1 is applied and a communication device.
  • the number of the plurality of elastic wave resonators in the filter 2a according to the embodiment may be two.
  • the filter 2b according to the embodiment may not be an elastic wave filter, but may be an LC filter or the like.
  • the present invention can be widely used in communication devices such as mobile phones as a multiplexer applicable to a multi-band system.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

La présente invention concerne un multiplexeur (1) qui est pourvu d'un premier filtre et d'un deuxième filtre (2a et 2b) qui partagent une connexion commune au niveau d'une borne commune (3); la bande passante du deuxième filtre (2b) chevauche, au moins partiellement, une bande de 0,75 à 0,8 fois la bande passante du premier filtre (2a); et parmi une pluralité de résonateurs à ondes élastiques disposés dans le premier filtre (2a), un premier résonateur à ondes élastiques connecté le plus près de la borne commune (3) satisfait au moins l'une des conditions (i), (ii) et (iii) ci-dessous. (i) Le pas de répétition du réflecteur / le pas de répétition de l'électrode IDT ≥ 1,01. (ii) La distance entre l'électrode IDT et le réflecteur > au pas de répétition du réflecteur. (iii) Le nombre de paires de la pluralité de doigts d'électrode de l'électrode IDT ≤ 50 paires.
PCT/JP2021/024085 2020-07-08 2021-06-25 Multiplexeur WO2022009692A1 (fr)

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