WO2022000644A1 - Microphone - Google Patents

Microphone Download PDF

Info

Publication number
WO2022000644A1
WO2022000644A1 PCT/CN2020/104629 CN2020104629W WO2022000644A1 WO 2022000644 A1 WO2022000644 A1 WO 2022000644A1 CN 2020104629 W CN2020104629 W CN 2020104629W WO 2022000644 A1 WO2022000644 A1 WO 2022000644A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit board
microphone
asic chip
shielding film
electromagnetic shielding
Prior art date
Application number
PCT/CN2020/104629
Other languages
French (fr)
Chinese (zh)
Inventor
胡恒宾
曾鹏
Original Assignee
瑞声声学科技(深圳)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞声声学科技(深圳)有限公司 filed Critical 瑞声声学科技(深圳)有限公司
Publication of WO2022000644A1 publication Critical patent/WO2022000644A1/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields

Definitions

  • the present invention relates to the field of acoustics and electricity, in particular to a microphone.
  • the microphone in the related art includes a circuit board, a casing connected with the circuit board to form a receiving space, and an ASIC chip and a MEMS chip contained in the receiving space, wherein the ASIC chip and the MEMS chip are fixed on the circuit board.
  • the ASIC chip in the related art is susceptible to electromagnetic interference, which seriously affects the performance of the MEMS microphone.
  • the purpose of the present invention is to provide a microphone, which can greatly improve the problem of electromagnetic interference suffered by the microphone.
  • the present invention provides a microphone, comprising a protection structure with a receiving space, an ASIC chip and a MEMS chip accommodated in the protection structure, the protection structure is provided with a sound hole, and the protection structure includes A circuit board and a casing that is covered with the circuit board to form the receiving space, and the surface of the ASIC chip is covered with a first electromagnetic shielding film.
  • the housing is made of metal material.
  • the housing includes a first metal shell and a second metal shell arranged at intervals and a second electromagnetic shielding film arranged between the first metal shell and the second metal shell.
  • the MEMS chip divides the receiving space into a first acoustic cavity and a second acoustic cavity, and the acoustic hole communicates with the first acoustic cavity or the second acoustic cavity.
  • the first electromagnetic shielding film includes a carrier film, an insulating layer, a metal layer, an adhesive film layer and a protective layer stacked in sequence, and the carrier film is closer to the ASIC chip than the protective layer.
  • the ASIC chip is fixed on the circuit board.
  • the first electromagnetic shielding film is spaced apart from the housing.
  • the first electromagnetic shielding film covers the surface of the ASIC chip away from the circuit board.
  • the ASIC chip is electrically connected to the circuit board through a first wire
  • the MEMS chip is electrically connected to the circuit board through a second wire
  • the first wire and the second wire are embedded in the circuit board.
  • the circuit in the circuit board is electrically connected, wherein the surface of the ASIC chip facing away from the circuit board has an electrical connection area that is electrically connected with the first wire, and the first electromagnetic shielding film has an electrical connection area for the electrical connection. Exposed cutout areas.
  • the microphone of the present invention reflects or absorbs electromagnetic waves by covering the surface of the ASIC chip with an electromagnetic shielding film, and can selectively shield electromagnetic waves in a specific frequency band according to actual use requirements, thereby improving electromagnetic waves. Electromagnetic interference to the ASIC chip.
  • FIG. 1 is a perspective view of an embodiment of the microphone of the present invention.
  • FIG. 2 is an exploded view of the microphone shown in FIG. 1 .
  • FIG. 3 is a cross-sectional view of the microphone shown in FIG. 1 along the direction A-A.
  • FIG. 4 is a schematic diagram of the layer structure of the electromagnetic shielding film in the microphone shown in FIG. 2 .
  • FIG. 5 is a schematic structural diagram of another embodiment of the microphone of the present invention.
  • FIG. 6 is a schematic structural diagram of another embodiment of the microphone of the present invention.
  • the microphone includes a protective structure 1 having a receiving space 1A, an ASIC chip 3 and a MEMS chip 5 received in the protective structure 1 , and the MEMS chip 5 divides the receiving space 1A into the first
  • the protective structure 1 is provided with an acoustic hole 7 which communicates with the first acoustic cavity 1B or the second acoustic cavity 1C.
  • the first acoustic cavity 1B is the back cavity of the MEMS chip 5 .
  • the protection structure 1 includes a circuit board 11 and a casing 13 covering the circuit board 11 to form the receiving space 1A.
  • an external sound wave acts on the MEMS chip 5 through the sound hole 7 , the MEMS The chip 5 generates electrical signals, and the electrical signals generated by the MEMS chip 5 are output to external circuits through the ASIC chip 3 and the circuit board 11 .
  • the casing 13 is a metal casing, for example, a copper casing; the casing 13 and the circuit board 11 are connected by welding, and the casing 13 and the circuit board 11 can be connected by surface contact, or It can be connected by point contact, and the connection between the casing 13 and the circuit board 11 can be an electrical connection (for example, the casing 13 and the circuit board 11 can be connected by conductive materials, laser welding, etc. electrical connection), or non-electrical connection (for example, the casing 13 and the circuit board 11 are connected through a non-conductive material).
  • the casing 13 By setting the casing 13 as a metal casing, the casing 1 can have a shielding effect, thereby reducing the electromagnetic interference of the ASIC chip 3 and the MEMS chip 5 .
  • the surface 31 of the ASIC chip 3 is covered with a first electromagnetic shielding film 9 .
  • the electromagnetic wave energy will be attenuated by reflection or absorption of the electromagnetic shielding layer, so that the electromagnetic interference of the electromagnetic wave to the ASIC chip 3 can be improved.
  • the first electromagnetic shielding film 9 includes a carrier film 91 , an insulating layer 93 , a metal layer 95 , an adhesive film layer 97 and a protective layer 99 stacked in sequence.
  • the carrier film 91 is opposite to the protective layer 99 .
  • Layer 99 is closer to the ASIC chip 3 .
  • the metal layer 95 serves as the shielding layer of the first electromagnetic shielding film 9 .
  • the effective shielding band of the electromagnetic shielding film is mainly related to its magnetic permeability.
  • the material and thickness of the electromagnetic shielding film will affect the magnetic permeability, thereby changing the effective shielding band.
  • a metallized polyethylene fiber conductive paper As an example of the first electromagnetic shielding film 9, its preferred shielding band is 10MHz-100MHz.
  • the ASIC chip 3 is fixed on the circuit board 11 .
  • the first electromagnetic shielding film 9 is disposed at intervals from the housing 13 .
  • the first electromagnetic shielding film 9 covers the surface 31 of the ASIC chip 3 facing away from the circuit board 11 .
  • the surface 31 includes a top surface 311 spaced from the circuit board 11 and a side surface 313 bent and extended from the top surface 311 toward the circuit board 11 .
  • the first electromagnetic shielding film 9 covers the top surface 311 .
  • the top surface 311 is the surface 31 of the ASIC chip 3 facing away from the circuit board 11 .
  • the ASIC chip 3 is electrically connected to the circuit board 11 through a first wire a
  • the MEMS chip 5 is electrically connected to the circuit board 11 through a second wire b
  • the first wire a and the second wire b are electrically connected through a circuit embedded in the circuit board 11
  • the surface 31 of the ASIC chip 3 facing away from the circuit board 11 ie, the top surface 311
  • the first electromagnetic shielding film 9 has a hollow area 9A that exposes the electrical connection area 315 .
  • the first wire may not be provided, and the ASIC chip 3 is directly electrically connected to the second wire b through a circuit embedded in the circuit board 11 , correspondingly , the electrical connection area may not be provided on the top surface 311 , and the hollow area does not need to be provided on the first electromagnetic shielding film 9 .
  • the MEMS chip 5 is fixed on the circuit board 11 , and the acoustic hole 7 penetrates through the housing 13 to communicate with the second acoustic cavity 1C.
  • the difference between the second embodiment and the first embodiment is only that the acoustic hole 7 penetrates the circuit board 11 to communicate with the first acoustic cavity 1B.
  • the difference between the third embodiment and the first embodiment is that the first electromagnetic shielding film 9 is also disposed on the side surface 313 of the ASIC chip, and the housing 13 includes first metal shells arranged at intervals 131 , a second metal shell 132 , and a second electromagnetic shielding film 133 disposed between the first metal shell 131 and the second metal shell 132 .
  • the second electromagnetic shielding film 133 may adopt the same layer structure as the first electromagnetic shielding film 9 . With this arrangement, the number and thickness of the shielding layer can be increased without significantly increasing the height and volume of the microphone, and a multi-layer metal reflection interface and inter-board filter capacitors can be formed, thereby effectively shielding and filtering the interference of electromagnetic wave radiation.
  • the ASIC chip may also be fixed on the housing; or, the MEMS chip may be fixed on the housing and enclosed with the housing to form the first acoustic cavity,
  • the sound hole penetrates through the housing to communicate with the first sound cavity, or the sound hole penetrates the circuit board to communicate with the second sound cavity.
  • the first electromagnetic shielding film 9 is covered on the outer surface 31 of the ASIC chip 3 to reflect or absorb electromagnetic waves, so that the electromagnetic interference of the electromagnetic waves to the ASIC chip 3 can be improved.

Abstract

Provided is a microphone, comprising a protective structure having an accommodation space and an ASIC chip and MEMS chip accommodated in the protective structure. A sound hole penetrates the protective structure. The protective structure comprises a circuit board and an outer shell that covers the circuit board thereby forming the accommodation space. A first electromagnetic shielding film covers the surface of the ASIC chip. Compared to prior art, the microphone of the present invention can improve to a large degree the problem of electromagnetic interference on the microphone.

Description

麦克风microphone 技术领域technical field
本发明涉及声电领域，尤其涉及一种麦克风。The present invention relates to the field of acoustics and electricity, in particular to a microphone.
背景技术Background technique
随着无线通讯的发展，全球移动电话用户越来越多，用户对移动电话的要求己不仅满足于通话，而且要能够提供高质量的通话效果，尤其是目前移动多媒体技术的发展，移动电话的通话质量更显重要，移动电话的麦克风作为移动电话的语音拾取装置，其设计好坏直接影响通话质量。With the development of wireless communication, there are more and more mobile phone users around the world, and users' requirements for mobile phones are not only satisfied with calls, but also capable of providing high-quality call effects. The quality of the call is more important. The microphone of the mobile phone is used as the voice pickup device of the mobile phone, and its design directly affects the quality of the call.
相关技术中的麦克风，包括线路板、与线路板盖接形成收容空间的外壳以及收容于收容空间内的ASIC芯片和MEMS芯片，其中，ASIC芯片和MEMS芯片固设于线路板上。然而相关技术中的ASIC芯片易受到电磁干扰，从而严重影响微机电麦克风的性能。The microphone in the related art includes a circuit board, a casing connected with the circuit board to form a receiving space, and an ASIC chip and a MEMS chip contained in the receiving space, wherein the ASIC chip and the MEMS chip are fixed on the circuit board. However, the ASIC chip in the related art is susceptible to electromagnetic interference, which seriously affects the performance of the MEMS microphone.
因此，实有必要提供一种新的麦克风解决上述技术问题。Therefore, it is necessary to provide a new microphone to solve the above technical problems.
技术问题technical problem
本发明的目的在于提供一种麦克风，该麦克风可以较大程度上改善麦克风受到的电磁干扰的问题。The purpose of the present invention is to provide a microphone, which can greatly improve the problem of electromagnetic interference suffered by the microphone.
技术解决方案technical solutions
为了达到上述目的，本发明提供了一种麦克风，包括具有收容空间的保护结构以及收容于所述保护结构内的ASIC芯片和MEMS芯片，所述保护结构上贯穿设有声孔，所述保护结构包括线路板及与所述线路板盖接形成所述收容空间的外壳，所述ASIC芯片的表面上覆盖有第一电磁屏蔽膜。In order to achieve the above object, the present invention provides a microphone, comprising a protection structure with a receiving space, an ASIC chip and a MEMS chip accommodated in the protection structure, the protection structure is provided with a sound hole, and the protection structure includes A circuit board and a casing that is covered with the circuit board to form the receiving space, and the surface of the ASIC chip is covered with a first electromagnetic shielding film.
优选地，所述外壳由金属材料制成。Preferably, the housing is made of metal material.
优选地，所述外壳包括间隔设置的第一金属壳和第二金属壳以及设置在所述第一金属壳与第二金属壳之间的第二电磁屏蔽膜。Preferably, the housing includes a first metal shell and a second metal shell arranged at intervals and a second electromagnetic shielding film arranged between the first metal shell and the second metal shell.
优选地，所述MEMS芯片将所述收容空间分隔为第一声腔和第二声腔，所述声孔与所述第一声腔或所述第二声腔连通。Preferably, the MEMS chip divides the receiving space into a first acoustic cavity and a second acoustic cavity, and the acoustic hole communicates with the first acoustic cavity or the second acoustic cavity.
优选地，所述第一电磁屏蔽膜包括依次叠设的载体膜、绝缘层、金属层、胶膜层及保护层，所述载体膜相对于所述保护层更加靠近所述ASIC芯片。Preferably, the first electromagnetic shielding film includes a carrier film, an insulating layer, a metal layer, an adhesive film layer and a protective layer stacked in sequence, and the carrier film is closer to the ASIC chip than the protective layer.
优选地，所述ASIC芯片固定于所述线路板上。Preferably, the ASIC chip is fixed on the circuit board.
优选地，所述第一电磁屏蔽膜与所述外壳间隔设置。Preferably, the first electromagnetic shielding film is spaced apart from the housing.
优选地，所述第一电磁屏蔽膜覆盖在所述ASIC芯片背离所述线路板的表面上。Preferably, the first electromagnetic shielding film covers the surface of the ASIC chip away from the circuit board.
优选地，所述ASIC芯片通过第一导线与所述线路板电连接，所述MEMS芯片通过第二导线与所述线路板电连接，所述第一导线和所述第二导线通过嵌在所述线路板内的电路电连接，其中，所述ASIC芯片背离所述线路板的表面具有与所述第一导线电连接的电连接区域，所述第一电磁屏蔽膜具有使所述电连接区域外露的镂空区域。Preferably, the ASIC chip is electrically connected to the circuit board through a first wire, the MEMS chip is electrically connected to the circuit board through a second wire, and the first wire and the second wire are embedded in the circuit board. The circuit in the circuit board is electrically connected, wherein the surface of the ASIC chip facing away from the circuit board has an electrical connection area that is electrically connected with the first wire, and the first electromagnetic shielding film has an electrical connection area for the electrical connection. Exposed cutout areas.
有益效果beneficial effect
与相关技术相比，本发明的麦克风通过在所述ASIC芯片的表面覆盖电磁屏蔽膜，以反射或者吸收电磁波，且可以根据实际的使用需求，选择性的屏蔽特定频段的电磁波，从而可以改善电磁波对所述ASIC芯片的电磁干扰。Compared with the related art, the microphone of the present invention reflects or absorbs electromagnetic waves by covering the surface of the ASIC chip with an electromagnetic shielding film, and can selectively shield electromagnetic waves in a specific frequency band according to actual use requirements, thereby improving electromagnetic waves. Electromagnetic interference to the ASIC chip.
附图说明Description of drawings
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中。In order to illustrate the technical solutions in the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative effort, among which.
图1为本发明的麦克风一实施例的立体图。FIG. 1 is a perspective view of an embodiment of the microphone of the present invention.
图2为图1所示麦克风的分解图。FIG. 2 is an exploded view of the microphone shown in FIG. 1 .
图3为图1所示麦克风沿A-A方向的剖视图。FIG. 3 is a cross-sectional view of the microphone shown in FIG. 1 along the direction A-A.
图4为图2所示麦克风中电磁屏蔽膜的层结构示意图。FIG. 4 is a schematic diagram of the layer structure of the electromagnetic shielding film in the microphone shown in FIG. 2 .
图5为本发明的麦克风另一实施例的结构示意图。FIG. 5 is a schematic structural diagram of another embodiment of the microphone of the present invention.
图6为本发明的麦克风又一实施例的结构示意图。FIG. 6 is a schematic structural diagram of another embodiment of the microphone of the present invention.
本发明的实施方式Embodiments of the present invention
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
实施例一Example 1
请结合参阅图1至4，麦克风包括具有收容空间1A的保护结构1以及收容于所述保护结构1内的ASIC芯片3和MEMS芯片5，所述MEMS芯片5将所述收容空间1A分隔为第一声腔1B和第二声腔1C，所述保护结构1上贯穿设有与所述第一声腔1B或所述第二声腔1C连通的声孔7。所述第一声腔1B为所述MEMS芯片5的背腔。Please refer to FIGS. 1 to 4 , the microphone includes a protective structure 1 having a receiving space 1A, an ASIC chip 3 and a MEMS chip 5 received in the protective structure 1 , and the MEMS chip 5 divides the receiving space 1A into the first For the acoustic cavity 1B and the second acoustic cavity 1C, the protective structure 1 is provided with an acoustic hole 7 which communicates with the first acoustic cavity 1B or the second acoustic cavity 1C. The first acoustic cavity 1B is the back cavity of the MEMS chip 5 .
所述保护结构1包括线路板11及与所述线路板11盖接形成所述收容空间1A的外壳13，当外界声波经过所述声孔7作用在所述MEMS芯片5上时，所述MEMS芯片5产生电信号，所述MEMS芯片5产生的电信号经所述ASIC芯片3和所述线路板11输出至外部电路。The protection structure 1 includes a circuit board 11 and a casing 13 covering the circuit board 11 to form the receiving space 1A. When an external sound wave acts on the MEMS chip 5 through the sound hole 7 , the MEMS The chip 5 generates electrical signals, and the electrical signals generated by the MEMS chip 5 are output to external circuits through the ASIC chip 3 and the circuit board 11 .
其中，所述外壳13为金属外壳，例如，铜制外壳；所述外壳13与所述线路板11之间通过焊接连接，所述外壳13与所述线路板11之间可以面接触连接，也可以点接触连接，且所述外壳13与所述线路板11之间的连接可以为电性连接（例如，通过所述外壳13与所述线路板11之间可以通过导电材料连接、激光焊接等方式电性连接），也可以为非电性连接（例如，所述外壳13与所述线路板11之间通过非导电材料连接）。通过将所述外壳13设置为金属外壳，从而可以使得所述外壳1具有屏蔽作用，从而可以降低所述ASIC芯片3和MEMS芯片5的电磁干扰。The casing 13 is a metal casing, for example, a copper casing; the casing 13 and the circuit board 11 are connected by welding, and the casing 13 and the circuit board 11 can be connected by surface contact, or It can be connected by point contact, and the connection between the casing 13 and the circuit board 11 can be an electrical connection (for example, the casing 13 and the circuit board 11 can be connected by conductive materials, laser welding, etc. electrical connection), or non-electrical connection (for example, the casing 13 and the circuit board 11 are connected through a non-conductive material). By setting the casing 13 as a metal casing, the casing 1 can have a shielding effect, thereby reducing the electromagnetic interference of the ASIC chip 3 and the MEMS chip 5 .
所述ASIC芯片3的表面31上覆盖有第一电磁屏蔽膜9。电磁波入射到第一电磁屏蔽膜9表面后会经过电磁屏蔽层的反射或者吸收造成电磁波能量的衰减，从而可以改善电磁波对所述ASIC芯片3的电磁干扰。The surface 31 of the ASIC chip 3 is covered with a first electromagnetic shielding film 9 . After the electromagnetic wave is incident on the surface of the first electromagnetic shielding film 9 , the electromagnetic wave energy will be attenuated by reflection or absorption of the electromagnetic shielding layer, so that the electromagnetic interference of the electromagnetic wave to the ASIC chip 3 can be improved.
如图4所示，所述第一电磁屏蔽膜9包括依次叠设的载体膜91、绝缘层93、金属层95、胶膜层97及保护层99，所述载体膜91相对于所述保护层99更加靠近所述ASIC芯片3。其中，所述金属层95作为第一电磁屏蔽膜9的屏蔽层。As shown in FIG. 4 , the first electromagnetic shielding film 9 includes a carrier film 91 , an insulating layer 93 , a metal layer 95 , an adhesive film layer 97 and a protective layer 99 stacked in sequence. The carrier film 91 is opposite to the protective layer 99 . Layer 99 is closer to the ASIC chip 3 . The metal layer 95 serves as the shielding layer of the first electromagnetic shielding film 9 .
需要说明的是，电磁屏蔽膜的有效屏蔽波段主要与其磁导率相关，电磁屏蔽膜的材质和厚度都会影响磁导率，从而改变有效的屏蔽波段，以例如，某金属化聚乙烯纤维导电纸作为第一电磁屏蔽膜9为例，其较好屏蔽波段为10MHz-100MHz。It should be noted that the effective shielding band of the electromagnetic shielding film is mainly related to its magnetic permeability. The material and thickness of the electromagnetic shielding film will affect the magnetic permeability, thereby changing the effective shielding band. For example, a metallized polyethylene fiber conductive paper As an example of the first electromagnetic shielding film 9, its preferred shielding band is 10MHz-100MHz.
在本实施例中，所述ASIC芯片3固定于所述线路板11上。In this embodiment, the ASIC chip 3 is fixed on the circuit board 11 .
在本实施例中，所述第一电磁屏蔽膜9与所述外壳13间隔设置。In this embodiment, the first electromagnetic shielding film 9 is disposed at intervals from the housing 13 .
在本实施例中，所述第一电磁屏蔽膜9覆盖在所述ASIC芯片3背离所述线路板11的表面31上。所述表面31包括与所述线路板11间隔设置的顶面311及自所述顶面311向靠近所述线路板11方向弯折延伸的侧面313，所述第一电磁屏蔽膜9覆盖在所述顶面311上，其中，所述顶面311为所述ASIC芯片3背离所述线路板11的表面31。In this embodiment, the first electromagnetic shielding film 9 covers the surface 31 of the ASIC chip 3 facing away from the circuit board 11 . The surface 31 includes a top surface 311 spaced from the circuit board 11 and a side surface 313 bent and extended from the top surface 311 toward the circuit board 11 . The first electromagnetic shielding film 9 covers the top surface 311 . On the top surface 311 , the top surface 311 is the surface 31 of the ASIC chip 3 facing away from the circuit board 11 .
在本实施例中，所述ASIC芯片3通过第一导线a与所述线路板11电连接，所述MEMS芯片5通过第二导线b与所述线路板11电连接，所述第一导线a和所述第二导线b通过嵌在所述线路板11内的电路电连接，其中，所述ASIC芯片3背离所述线路板11的表面31（即所述顶面311）具有与所述第一导线a电连接的电连接区域315，所述第一电磁屏蔽膜9具有使所述电连接区域315外露的镂空区域9A。可以理解的是，在其他实施例中，还可以不设置所述第一导线，所述ASIC芯片3直接通过嵌在所述线路板11内的电路与所述第二导线b电连接，相应地，所述顶面311上可以不设置所述电连接区域，所述第一电磁屏蔽膜9也不需要设置所述镂空区域。In this embodiment, the ASIC chip 3 is electrically connected to the circuit board 11 through a first wire a, the MEMS chip 5 is electrically connected to the circuit board 11 through a second wire b, and the first wire a and the second wire b are electrically connected through a circuit embedded in the circuit board 11 , wherein the surface 31 of the ASIC chip 3 facing away from the circuit board 11 (ie, the top surface 311 ) has a An electrical connection area 315 is electrically connected to a wire a, and the first electromagnetic shielding film 9 has a hollow area 9A that exposes the electrical connection area 315 . It can be understood that, in other embodiments, the first wire may not be provided, and the ASIC chip 3 is directly electrically connected to the second wire b through a circuit embedded in the circuit board 11 , correspondingly , the electrical connection area may not be provided on the top surface 311 , and the hollow area does not need to be provided on the first electromagnetic shielding film 9 .
在本实施例中，所述MEMS芯片5固定于所述线路板11上，所述声孔7贯穿所述外壳13以与所述第二声腔1C连通。In this embodiment, the MEMS chip 5 is fixed on the circuit board 11 , and the acoustic hole 7 penetrates through the housing 13 to communicate with the second acoustic cavity 1C.
实施例二Embodiment 2
请参阅图5，实施例二与实施例一的区别仅在于：所述声孔7贯穿所述线路板11以与所述第一声腔1B连通。Referring to FIG. 5 , the difference between the second embodiment and the first embodiment is only that the acoustic hole 7 penetrates the circuit board 11 to communicate with the first acoustic cavity 1B.
实施例三Embodiment 3
请参阅图6，实施例三与实施例一的区别在于：所述第一电磁屏蔽膜9还设置在所述ASIC芯片的所述侧面313，且所述外壳13包括间隔设置的第一金属壳131、第二金属壳132和设置在第一金属壳131与第二金属壳132之间的第二电磁屏蔽膜133。其中，所述第二电磁屏蔽膜133可以采用与所述第一电磁屏蔽膜9相同的层结构。采用该种设置，可以在不明显增加麦克风高度和体积的基础上增加屏蔽层的层数及厚度并形成多层金属反射界面及板间滤波电容，从而可以有效屏蔽和滤除电磁波辐射的干扰。Referring to FIG. 6 , the difference between the third embodiment and the first embodiment is that the first electromagnetic shielding film 9 is also disposed on the side surface 313 of the ASIC chip, and the housing 13 includes first metal shells arranged at intervals 131 , a second metal shell 132 , and a second electromagnetic shielding film 133 disposed between the first metal shell 131 and the second metal shell 132 . The second electromagnetic shielding film 133 may adopt the same layer structure as the first electromagnetic shielding film 9 . With this arrangement, the number and thickness of the shielding layer can be increased without significantly increasing the height and volume of the microphone, and a multi-layer metal reflection interface and inter-board filter capacitors can be formed, thereby effectively shielding and filtering the interference of electromagnetic wave radiation.
可以理解的是，在其他实施例中，所述ASIC芯片也可以固定于所述外壳上；或者，所述MEMS芯片固定于所述外壳上并与所述外壳围合形成所述第一声腔，相应地，所述声孔贯穿所述外壳以与所述第一声腔连通，或者，所述声孔贯穿所述线路板以与所述第二声腔连通。It can be understood that, in other embodiments, the ASIC chip may also be fixed on the housing; or, the MEMS chip may be fixed on the housing and enclosed with the housing to form the first acoustic cavity, Correspondingly, the sound hole penetrates through the housing to communicate with the first sound cavity, or the sound hole penetrates the circuit board to communicate with the second sound cavity.
与相关技术相比，本发明的麦克风通过在所述ASIC芯片3的所述外表面31覆盖第一电磁屏蔽膜9，以反射或者吸收电磁波，从而可以改善电磁波对所述ASIC芯片3的电磁干扰。Compared with the related art, in the microphone of the present invention, the first electromagnetic shielding film 9 is covered on the outer surface 31 of the ASIC chip 3 to reflect or absorb electromagnetic waves, so that the electromagnetic interference of the electromagnetic waves to the ASIC chip 3 can be improved. .
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。The above are only the embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, improvements can be made without departing from the inventive concept of the present invention, but these belong to the present invention. scope of protection.

Claims (9)

  1. 一种麦克风，包括具有收容空间的保护结构以及收容于所述保护结构内的ASIC芯片和MEMS芯片，所述保护结构上贯穿设有声孔，所述保护结构包括线路板及与所述线路板盖接形成所述收容空间的外壳，其特征在于，所述ASIC芯片的表面上覆盖有第一电磁屏蔽膜。A microphone includes a protection structure with a receiving space, an ASIC chip and a MEMS chip accommodated in the protection structure, an acoustic hole is formed through the protection structure, and the protection structure includes a circuit board and a cover of the circuit board A casing forming the receiving space is connected, wherein the surface of the ASIC chip is covered with a first electromagnetic shielding film.
  2. 根据权利要求1所述的麦克风，其特征在于，所述外壳由金属材料制成。The microphone of claim 1, wherein the housing is made of a metal material.
  3. 根据权利要求1所述的麦克风，其特征在于，所述外壳包括间隔设置的第一金属壳和第二金属壳以及设置在所述第一金属壳与第二金属壳之间的第二电磁屏蔽膜。The microphone of claim 1, wherein the housing comprises a first metal shell and a second metal shell disposed at intervals and a second electromagnetic shield disposed between the first metal shell and the second metal shell membrane.
  4. 根据权利要求1所述的麦克风，其特征在于，所述MEMS芯片将所述收容空间分隔为第一声腔和第二声腔，所述声孔与所述第一声腔或所述第二声腔连通。The microphone of claim 1, wherein the MEMS chip divides the receiving space into a first acoustic cavity and a second acoustic cavity, and the acoustic hole communicates with the first acoustic cavity or the second acoustic cavity.
  5. 根据权利要求1所述的麦克风，其特征在于，所述第一电磁屏蔽膜包括依次叠设的载体膜、绝缘层、金属层、胶膜层及保护层，所述载体膜相对于所述保护层更加靠近所述ASIC芯片。The microphone according to claim 1, wherein the first electromagnetic shielding film comprises a carrier film, an insulating layer, a metal layer, an adhesive film layer and a protective layer stacked in sequence, and the carrier film is opposite to the protective layer. The layers are closer to the ASIC chip.
  6. 根据权利要求1-5中任一项所述的麦克风，其特征在于，所述ASIC芯片固定于所述线路板上。The microphone according to any one of claims 1-5, wherein the ASIC chip is fixed on the circuit board.
  7. 根据权利要求6所述的麦克风，其特征在于，所述第一电磁屏蔽膜与所述外壳间隔设置。The microphone of claim 6, wherein the first electromagnetic shielding film is spaced apart from the housing.
  8. 根据权利要求6所述的麦克风，其特征在于，所述第一电磁屏蔽膜覆盖在所述ASIC芯片背离所述线路板的表面上。The microphone of claim 6, wherein the first electromagnetic shielding film covers a surface of the ASIC chip away from the circuit board.
  9. 根据权利要求8所述的麦克风，其特征在于，所述ASIC芯片通过第一导线与所述线路板电连接，所述MEMS芯片通过第二导线与所述线路板电连接，所述第一导线和所述第二导线通过嵌在所述线路板内的电路电连接，其中，所述ASIC芯片背离所述线路板的表面具有与所述第一导线电连接的电连接区域，所述第一电磁屏蔽膜具有使所述电连接区域外露的镂空区域。The microphone according to claim 8, wherein the ASIC chip is electrically connected to the circuit board through a first wire, the MEMS chip is electrically connected to the circuit board through a second wire, and the first wire is electrically connected to the circuit board. and the second wire are electrically connected through a circuit embedded in the circuit board, wherein the surface of the ASIC chip facing away from the circuit board has an electrical connection area that is electrically connected to the first wire, the first The electromagnetic shielding film has a hollow area exposing the electrical connection area.
PCT/CN2020/104629 2020-06-30 2020-07-24 Microphone WO2022000644A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202021265074.5U CN212324360U (en) 2020-06-30 2020-06-30 Microphone (CN)
CN202021265074.5 2020-06-30

Publications (1)

Publication Number Publication Date
WO2022000644A1 true WO2022000644A1 (en) 2022-01-06

Family

ID=74028346

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/104629 WO2022000644A1 (en) 2020-06-30 2020-07-24 Microphone

Country Status (2)

Country Link
CN (1) CN212324360U (en)
WO (1) WO2022000644A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117528368B (en) * 2024-01-08 2024-03-26 苏州敏芯微电子技术股份有限公司 MEMS microphone structure

Citations (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007015593A1 (en) * 2005-08-02 2007-02-08 Bse Co., Ltd Silicon based condenser microphone and packaging method for the same
WO2007126179A1 (en) * 2006-05-03 2007-11-08 Bse Co., Ltd. Silicon condenser microphone having additional back chamber
CN101141834A (en) * 2006-09-09 2008-03-12 宝星电子株式会社 Silicon condenser microphone
CN102318365A (en) * 2009-02-13 2012-01-11 船井电机株式会社 Microphone unit
CN102742301A (en) * 2009-12-23 2012-10-17 意法半导体股份有限公司 Microelectromechanical transducer and corresponding assembly process
US20130320465A1 (en) * 2012-05-30 2013-12-05 Merry Electronics Co., Ltd. Thin mems microphone module
CN103945313A (en) * 2013-01-23 2014-07-23 英飞凌科技股份有限公司 Chip arrangement and a method for manufacturing the same
CN104145484A (en) * 2011-11-17 2014-11-12 应美盛股份有限公司 Microphone Module with Sound Pipe
CN104254045A (en) * 2013-06-26 2014-12-31 英飞凌科技股份有限公司 Pre-mold for microphone assembly and method of producing same
CN104254047A (en) * 2013-06-26 2014-12-31 英飞凌科技股份有限公司 Electronic device with large back volume for electromechanical transducer
CN104604248A (en) * 2012-09-10 2015-05-06 罗伯特·博世有限公司 Mems microphone package with molded interconnect device
CN204377134U (en) * 2015-01-20 2015-06-03 瑞声声学科技(深圳)有限公司 Mems microphone
CN204377143U (en) * 2015-01-20 2015-06-03 瑞声声学科技(深圳)有限公司 The encapsulating structure of micro-electro-mechanical microphone
CN204408624U (en) * 2015-01-20 2015-06-17 瑞声声学科技(深圳)有限公司 Mems microphone device
CN204408625U (en) * 2015-01-21 2015-06-17 瑞声声学科技(深圳)有限公司 Mems microphone
US20150264463A1 (en) * 2014-03-14 2015-09-17 Omron Corporation Microphone
CN206100450U (en) * 2016-08-31 2017-04-12 歌尔股份有限公司 Packaging structure of MEMS microphone
US20180146302A1 (en) * 2014-07-31 2018-05-24 Merry Electronics (Shenzhen) Co., Ltd. Mems microphone package structure and method for manufacturing the mems microphone package structures
CN209072678U (en) * 2018-12-14 2019-07-05 歌尔科技有限公司 A kind of encapsulating structure of MEMS microphone
CN110248298A (en) * 2019-05-13 2019-09-17 苏州捷研芯纳米科技有限公司 Silicon microphone and its processing method
CN110291718A (en) * 2017-02-14 2019-09-27 美商楼氏电子有限公司 The system and method for calibrating microphone cutoff frequency
CN110383859A (en) * 2017-03-21 2019-10-25 思睿逻辑国际半导体有限公司 MEMS transducer packaging part
CN107005756B (en) * 2014-10-29 2019-11-01 罗伯特·博世有限公司 Microphone package with the spacer being molded
CN110526199A (en) * 2019-09-10 2019-12-03 苏州敏芯微电子技术股份有限公司 Silicon microphone packaging structure and its packaging method
CN110894059A (en) * 2018-09-12 2020-03-20 英飞凌科技股份有限公司 MEMS sensor package and method of making same
US20200154223A1 (en) * 2018-11-09 2020-05-14 Knowles Electronics, Llc Systems and methods for calibrating microphone assemblies including a membrane barrier

Patent Citations (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007015593A1 (en) * 2005-08-02 2007-02-08 Bse Co., Ltd Silicon based condenser microphone and packaging method for the same
WO2007126179A1 (en) * 2006-05-03 2007-11-08 Bse Co., Ltd. Silicon condenser microphone having additional back chamber
CN101141834A (en) * 2006-09-09 2008-03-12 宝星电子株式会社 Silicon condenser microphone
CN102318365A (en) * 2009-02-13 2012-01-11 船井电机株式会社 Microphone unit
CN102742301A (en) * 2009-12-23 2012-10-17 意法半导体股份有限公司 Microelectromechanical transducer and corresponding assembly process
CN104145484A (en) * 2011-11-17 2014-11-12 应美盛股份有限公司 Microphone Module with Sound Pipe
US20130320465A1 (en) * 2012-05-30 2013-12-05 Merry Electronics Co., Ltd. Thin mems microphone module
CN104604248A (en) * 2012-09-10 2015-05-06 罗伯特·博世有限公司 Mems microphone package with molded interconnect device
CN103945313A (en) * 2013-01-23 2014-07-23 英飞凌科技股份有限公司 Chip arrangement and a method for manufacturing the same
CN104254047A (en) * 2013-06-26 2014-12-31 英飞凌科技股份有限公司 Electronic device with large back volume for electromechanical transducer
CN104254045A (en) * 2013-06-26 2014-12-31 英飞凌科技股份有限公司 Pre-mold for microphone assembly and method of producing same
US20150264463A1 (en) * 2014-03-14 2015-09-17 Omron Corporation Microphone
US20180146302A1 (en) * 2014-07-31 2018-05-24 Merry Electronics (Shenzhen) Co., Ltd. Mems microphone package structure and method for manufacturing the mems microphone package structures
CN107005756B (en) * 2014-10-29 2019-11-01 罗伯特·博世有限公司 Microphone package with the spacer being molded
CN204377143U (en) * 2015-01-20 2015-06-03 瑞声声学科技(深圳)有限公司 The encapsulating structure of micro-electro-mechanical microphone
CN204408624U (en) * 2015-01-20 2015-06-17 瑞声声学科技(深圳)有限公司 Mems microphone device
CN204377134U (en) * 2015-01-20 2015-06-03 瑞声声学科技(深圳)有限公司 Mems microphone
CN204408625U (en) * 2015-01-21 2015-06-17 瑞声声学科技(深圳)有限公司 Mems microphone
CN206100450U (en) * 2016-08-31 2017-04-12 歌尔股份有限公司 Packaging structure of MEMS microphone
CN110291718A (en) * 2017-02-14 2019-09-27 美商楼氏电子有限公司 The system and method for calibrating microphone cutoff frequency
CN110383859A (en) * 2017-03-21 2019-10-25 思睿逻辑国际半导体有限公司 MEMS transducer packaging part
CN110894059A (en) * 2018-09-12 2020-03-20 英飞凌科技股份有限公司 MEMS sensor package and method of making same
US20200154223A1 (en) * 2018-11-09 2020-05-14 Knowles Electronics, Llc Systems and methods for calibrating microphone assemblies including a membrane barrier
CN209072678U (en) * 2018-12-14 2019-07-05 歌尔科技有限公司 A kind of encapsulating structure of MEMS microphone
CN110248298A (en) * 2019-05-13 2019-09-17 苏州捷研芯纳米科技有限公司 Silicon microphone and its processing method
CN110526199A (en) * 2019-09-10 2019-12-03 苏州敏芯微电子技术股份有限公司 Silicon microphone packaging structure and its packaging method

Also Published As

Publication number Publication date
CN212324360U (en) 2021-01-08

Similar Documents

Publication Publication Date Title
US8428285B2 (en) Microphone screen with common mode interference reduction
US20210289280A1 (en) Earphone
US9807517B2 (en) MEMS microphone
US20110069855A1 (en) Electronic apparatus
KR880000963B1 (en) Electret microphone shield
JP2013135436A (en) Microphone device and electronic apparatus
WO2022000645A1 (en) Microphone
WO2022000644A1 (en) Microphone
US7130434B1 (en) Microphone PCB with integrated filter
US7346179B1 (en) Microphone with low frequency noise shunt
CN218830591U (en) TDD noise elimination circuit, TWS bluetooth headset and wireless communication device
WO2022000646A1 (en) Microphone
JP5006376B2 (en) Electronics
CN212392982U (en) Wireless earphone
CN210298076U (en) MEMS microphone and electronic equipment
CN201011742Y (en) Improved silicon microphone
CN210958792U (en) MEMS microphone and electronic equipment
TWI465164B (en) Circuit board structure and fabrication method thereof
JP4639561B2 (en) Condenser microphone
CN215187374U (en) Silicon wheat that interference killing feature is strong
CN213694154U (en) Microphone packaging structure and electronic equipment
CN213847009U (en) Intelligent microphone packaging structure and electronic equipment
CN220123072U (en) MEMS microphone
CN217643703U (en) Bonding wire loudspeaker and terminal equipment
CN212086491U (en) Microphone packaging structure

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20943061

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20943061

Country of ref document: EP

Kind code of ref document: A1