WO2021227853A1 - 电极结构、电化学沉积设备及其电化学沉积方法 - Google Patents

电极结构、电化学沉积设备及其电化学沉积方法 Download PDF

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Publication number
WO2021227853A1
WO2021227853A1 PCT/CN2021/089774 CN2021089774W WO2021227853A1 WO 2021227853 A1 WO2021227853 A1 WO 2021227853A1 CN 2021089774 W CN2021089774 W CN 2021089774W WO 2021227853 A1 WO2021227853 A1 WO 2021227853A1
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Prior art keywords
electrochemical deposition
electrode structure
substrate
deposition apparatus
wall
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PCT/CN2021/089774
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English (en)
French (fr)
Inventor
袁广才
闫俊伟
张国才
王成飞
董士豪
曹占锋
孙少东
麦轩伟
王大军
Original Assignee
京东方科技集团股份有限公司
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Publication of WO2021227853A1 publication Critical patent/WO2021227853A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/12—Shape or form
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/06—Filtering particles other than ions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/10—Agitating of electrolytes; Moving of racks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C25D21/14—Controlled addition of electrolyte components
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces

Definitions

  • the present disclosure relates to the field of production of display products, in particular to an electrode structure used in an electrochemical deposition device, an electrochemical deposition device and a method of use thereof.
  • the electrochemical deposition process is a low-cost chemical film forming method, which can deposit a metal layer with a thickness of 2-20um with a relatively low resistance value.
  • the current electrochemical deposition equipment is generally suitable for electrochemical deposition on glass substrates with a small size, while for glass substrates with a larger size, the problem of uneven film formation is prone to occur.
  • the present disclosure aims to solve at least one of the technical problems existing in the prior art, and proposes an electrode structure used in an electrochemical deposition device and an electrochemical deposition device.
  • the present disclosure provides an electrode structure for use in electrochemical deposition equipment.
  • the electrode structure includes: a support frame; a metal mesh and a plurality of conductive strips arranged on the support frame, wherein the conductive The strip is electrically connected to the metal mesh, and the conductive strip includes a conductive body and a protective layer covering the conductive body, and the conductivity of the conductive body is greater than the conductivity of the protective layer.
  • At least one of the plurality of conductive stripes extends along the length direction of the metal mesh, and at least one of the remaining plurality of conductive stripes extends along the width direction of the metal mesh.
  • the electrode structure is divided into a plurality of partitions, and each partition is provided with the support frame, the conductive strip, and the metal mesh, and the metal meshes are located in different partitions. insulation.
  • the plurality of the partitions includes a middle part and at least one edge part surrounding the middle part.
  • the size of the middle region along the first direction is 1/3 to 3/5 of the size of the electrode structure along the first direction
  • the size of the middle region along the second direction It is 1/3 to 3/5 of the size of the electrode structure along the second direction
  • the first direction is the length direction of the electrode structure
  • the second direction is the width direction of the electrode structure.
  • the material of the support frame is the same as the material of the metal mesh.
  • the present disclosure provides an electrochemical deposition apparatus, including: a tank body with a containing tank, a substrate carrier, and the aforementioned electrode structure, the containing tank is used to contain the electroplating solution, and the electrode structure is disposed in the In the containing tank, the substrate carrier is used for loading the substrate to be electroplated.
  • the electrochemical deposition apparatus further includes a shunt plate corresponding to the electrode structure, and the shunt plate is disposed on a side of the corresponding electrode structure facing the substrate carrier, wherein the shunt plate Including: a containing shell and a plurality of liquid return pipelines,
  • the containing shell includes: a first wall, a second wall disposed opposite to the first wall, and connected to the first wall and the second wall
  • the first wall is located on the side of the second wall facing the substrate carrier, the first wall, the second wall and the side wall enclose a containing cavity
  • the The containing shell is provided with a liquid inlet and a plurality of liquid outlets, the liquid inlet and the plurality of liquid outlets are both in communication with the containing cavity, and the plurality of liquid outlets are arranged on the first wall
  • the liquid return pipeline passes through the containing cavity, and the liquid return pipeline passes through the containment shell along the thickness direction of the distribution plate.
  • the electrochemical deposition apparatus further includes a drain line, and the inlet of the drain line is in communication with the containing tank, and the electrochemical deposition apparatus further includes: a filter device, the filter device It has a filter inlet and a filter outlet, the filter inlet is in communication with the outlet of the drain pipe, the filter outlet is in communication with the liquid inlet of the splitter plate, and the filter device is used for electroplating the inlet of the filter. Liquid is filtered.
  • the drain pipeline includes an upright portion extending along the height direction of the tank body and a horizontal portion located at the bottom of the electrochemical deposition device, and the inlet of the upright portion is connected to the upper part of the tank body.
  • the outlet of the vertical portion is in communication with the inlet of the horizontal portion
  • the outlet of the horizontal portion is in communication with the filter inlet of the filter device
  • the electrochemical deposition apparatus further includes an exhaust pipe, The exhaust pipe communicates with the top of the upright portion.
  • the electrochemical deposition apparatus further includes: a gas pipeline, the gas pipeline is arranged in the containing tank and located at the bottom of the containing tank, the gas pipeline has an air inlet and A plurality of air outlets, the air inlet of the gas pipeline communicates with a gas source, and the air outlet is used for discharging gas into the containing tank.
  • a gas pipeline the gas pipeline is arranged in the containing tank and located at the bottom of the containing tank, the gas pipeline has an air inlet and A plurality of air outlets, the air inlet of the gas pipeline communicates with a gas source, and the air outlet is used for discharging gas into the containing tank.
  • the electrochemical deposition equipment further includes: an ion supplement device, which is in communication with the containing tank, and is used to supplement electroplating ions to the electroplating solution in the containing tank.
  • an ion supplement device which is in communication with the containing tank, and is used to supplement electroplating ions to the electroplating solution in the containing tank.
  • the electrochemical deposition equipment further includes a monitoring device for monitoring at least one of the temperature, liquid level, and ion concentration of the electroplating solution in the containing tank.
  • the electrochemical deposition equipment further includes a driving device connected to the substrate carrier, and the driving device is used to drive the substrate carrier to move along the length direction and/or the width direction of the substrate.
  • the number of the electrode structures is two, and the two electrode structures are arranged opposite to each other and are respectively located on both sides of the substrate loaded by the substrate carrier.
  • the electrochemical deposition equipment further includes a power supply device, the anode output end of the power supply device is connected to the electrode structure, and the cathode output end of the power supply device is connected to the substrate carrier.
  • the present disclosure provides an electrochemical deposition method, which is applied to the aforementioned electrochemical deposition equipment, including: loading the substrate on the substrate carrier; pickling the substrate; The substrate carrier moves the substrate into the holding tank to electrochemically deposit the substrate; removes the substrate from the holding tank, and washes the substrate with water; and performs anti-oxidation on the substrate Processing; and the substrate is cleaned with pure water, and dried with an air knife.
  • the current density is controlled to realize the deposition of the electroplating solution.
  • FIG. 1 is a schematic diagram of a first surface of an electrode structure provided in some embodiments of the present disclosure
  • FIG. 2 is a schematic diagram of a second surface of an electrode structure provided in some embodiments of the present disclosure.
  • FIG. 3 is a schematic diagram of electrode structures provided in other embodiments of the disclosure.
  • FIG. 4 is a perspective view of the overall structure of an electrochemical deposition device provided in some embodiments of the disclosure.
  • FIG. 5 is a perspective view of a partial structure of an electrochemical deposition device provided in some embodiments of the present disclosure.
  • FIG. 6 is a side view of a partial structure of an electrochemical deposition apparatus provided in some embodiments of the present disclosure.
  • FIG. 7 is a top view of a partial structure of an electrochemical deposition apparatus provided in some embodiments of the present disclosure.
  • FIG. 8 is a bottom view of a partial structure of an electrochemical deposition apparatus provided in some embodiments of the present disclosure.
  • FIG. 9 is a perspective view of a substrate carrier provided in some embodiments of the present disclosure.
  • FIG. 10 is a front view of a substrate carrier provided in some embodiments of the present disclosure.
  • Figure 11 is a schematic diagram of a gas pipeline provided in some embodiments of the present disclosure.
  • Figure 12 is a perspective view of a manifold provided by some embodiments of the present disclosure.
  • Figure 13 is a cross-sectional view taken along line AA in Figure 12;
  • FIG. 14 is a flowchart of an electrochemical deposition method provided by some embodiments of the disclosure.
  • FIG. 1 is a schematic diagram of a first surface of an electrode structure provided in some embodiments of the disclosure
  • FIG. 2 is a schematic diagram of a second surface of an electrode structure provided in some embodiments of the disclosure
  • the first surface and the second surface are electrode structures
  • the electrode structure 10 is used in electrochemical deposition equipment, as shown in Figures 1 and 2
  • the electrode structure includes: a support frame 11, a metal mesh 12 arranged on the support frame 11, and a plurality of conductive strips 13 .
  • the conductive strip 13 is electrically connected to the metal mesh 12, and the conductive strip 13 includes a conductive body and a protective layer covering the conductive body, and the conductivity of the conductive body is greater than the conductivity of the protective layer.
  • the protective layer is used to prevent the conductive body from reacting with the metal ions in the electroplating solution, and the activity of the protective layer is less than that of the conductive body.
  • the conductive strip 13 has a titanium-clad copper structure, in which the main component of the conductive body is copper, and the main component of the protective layer is titanium metal.
  • the substrate to be electroplated is loaded on a substrate carrier.
  • the substrate carrier serves as a cathode and is connected to the negative output terminal of the power supply;
  • the electrode structure 10 is used as an anode and is connected to the positive output terminal of the power supply.
  • an electric field is formed between the anode and the substrate to be electroplated, and the metal ions (such as Cu ions, Ni ions, or Ag ions, etc.) in the electroplating solution are attached to the substrate to form a plating film.
  • the size of the electrode structure 10 needs to be increased accordingly, which easily leads to a difference in voltage between the edge and the middle of the electrode structure 10, resulting in a difference in the electric field between the edge and the center of the substrate. , which in turn leads to poor film thickness uniformity formed on the substrate.
  • a plurality of conductive strips 13 are provided on the support frame 11, and the conductive strips 13 include a conductive body and a protective layer.
  • the conductive body is made of a metal material with better conductivity, so that the overall electrode structure can be reduced.
  • the resistivity of the metal mesh 12 improves the uniformity of the voltage at different positions of the metal mesh 12, thereby improving the uniformity of the electric field in the area where the substrate to be electroplated is located, and improving the uniformity of film formation.
  • At least one of the plurality of conductive strips 13 extends along the length direction of the metal mesh 12 (the left-to-right direction in FIG. 2), and at least one of the remaining conductive strips 13 It extends along the width direction of the metal mesh 12 (up and down direction in FIG. 2).
  • the material of the support frame 11 is the same as the material of the metal mesh 12, for example, both are made of titanium.
  • the support frame 11 includes a support frame main body 11a and a power supply part 11b, the metal mesh 12 is fixed on the support frame main body 11a, and the power supply part 11b is used to connect with a power supply device and load electrical signals.
  • the width of the end of the powered portion 11b away from the support frame main body 11a is smaller than the width of the end of the powered portion 11b close to the support frame main body 11a, for example, the width of the end of the powered portion 11b close to the support frame main body 11a is
  • the energizing portion 11b is 1 to 1.4 times the width of one end away from the support frame main body 11a.
  • the metal mesh 12 is an integral structure and has a rectangular shape.
  • One of the conductive strips 13 extends along the length of the electrode structure, and the remaining conductive strips 13 extend along the width of the electrode structure and extend from the anode.
  • the structure 10 extends from one side to the other side.
  • the length of the metal mesh 12 is 1 to 1.5 times the width.
  • the support frame body 11a includes a lateral support bar 111a and a longitudinal support bar 111b.
  • the left-right direction) extends, and the longitudinal support bar 111b extends in the second direction (ie, the width direction of the electrode structure, that is, the up-down direction in FIG. 2).
  • every two adjacent longitudinal support bars 111b are provided with a conductive bar 13 parallel to the longitudinal support bars 111b.
  • the distance between two adjacent lateral support bars 111a is approximately the same as the distance between two adjacent longitudinal support bars 111b.
  • the distances between the two adjacent longitudinal support bars 111b and the conductive bars 13 between them are approximately the same, so that the electric fields corresponding to different positions of the electrode structure are more uniform.
  • FIG. 3 is a schematic diagram of the electrode structure provided in some other embodiments of the present disclosure.
  • the anode structure 10 is divided into a plurality of partitions (A1, A2), and the support frame body includes a support located in each partition.
  • the section 111 a plurality of conductive bars 13 are arranged in each partition, and the portions of the metal mesh 12 in different partitions are insulated from each other.
  • the parts of the support frame 11 located in different partitions can also be spaced apart, and the anode structure can be located in different areas by insulating connectors.
  • the parts of the partition are fixedly connected together.
  • the voltages of the different partitions can be separately controlled, so as to improve the uniformity of the electric field corresponding to the different partitions, thereby improving the uniformity of film formation on the substrate.
  • the electrode structure 10 is prone to edge discharge, which results in that the electric field intensity at the edges is greater than the electric field intensity in the middle region, which in turn causes the film formed on the substrate to have a thicker edge and a thinner center.
  • the plurality of partitions of the electrode structure in the embodiment of the present disclosure may include: a middle part area A1 and at least one edge part A2 surrounding the middle part area A1. By aligning the middle part area A1 and each edge part The voltage of A2 is individually controlled to improve the uniformity of film formation.
  • the size L11 of the middle area A1 along the first direction is 1 to 3 times the size of the edge area A2 along the first direction L12
  • the size of the middle area A1 along the second direction L21 is 1 to 3 times the size of the edge partition A2 along the second direction L22
  • the first direction is the length direction of the electrode structure
  • the second direction is the width direction of the electrode structure.
  • the size of the middle region in the first direction is 1/3 to 3/5 of the size of the electrode structure in the first direction
  • the size of the middle region in the second direction is 1/the size of the electrode structure in the second direction. 3 to 3/5.
  • FIG. 4 is a perspective view of the overall structure of the electrochemical deposition apparatus provided in some embodiments of the present disclosure
  • FIG. 5 is an electrochemical deposition apparatus provided in some embodiments of the present disclosure.
  • a perspective view of a part of the structure of the electroless deposition apparatus FIG. 6 is a side view of a part of the structure of the electrochemical deposition apparatus provided in some embodiments of the present disclosure
  • FIG. 7 is a part of the electrochemical deposition apparatus provided in some embodiments of the present disclosure
  • the top view of the structure, FIG. 8 is a bottom view of a part of the structure of the electrochemical deposition apparatus provided in some embodiments of the present disclosure.
  • the electrochemical deposition apparatus includes: a tank body 20 with a receiving tank 20v, a substrate carrier 30, and the electrode structure 10 in the above-mentioned embodiment.
  • the containing tank 20v is used for containing electroplating solution
  • the electrode structure is arranged in the containing tank 20v
  • the substrate carrier 30 is used for loading the substrate to be electroplated. Since the voltage uniformity at different positions in the above-mentioned electrode structure is improved, when the electrochemical deposition device with the above-mentioned electrode structure is used for electrochemical deposition, the uniformity of the electric field in the area where the substrate is located is improved.
  • the chemical deposition equipment can ensure the uniformity of film thickness when electrochemically depositing large-size (for example, 1850mm*1500mm) substrates.
  • the process of electrochemical deposition on the substrate includes: step one, loading the substrate on the substrate carrier 30; step two, pickling the substrate; step three, the substrate carrier 30 moves the substrate into the holding tank 20v, Electrochemical deposition is performed on the substrate; step four, remove the substrate from the holding tank 20v, and wash the substrate with water; step five, perform anti-oxidation treatment on the substrate to ensure that the film deposited on the substrate is not oxidized; step six, on the substrate Carry out pure water cleaning, and carry out air knife drying.
  • ordinary chemicals electrochemical deposition is performed on the substrate
  • electrochemical deposition chemicals electrochemical deposition is performed on the substrate
  • ordinary chemicals electrochemical deposition is performed on the substrate
  • rapid deposition chemicals can be used, and the deposition of various chemicals can be achieved by controlling the current density.
  • the tank body 20 is made of materials that are not easily deformed, acid-resistant and alkali-resistant, and reinforcing ribs 21 may be arranged outside the side walls of the tank body 20.
  • the electrochemical deposition equipment further includes a power supply device (not shown), the anode output end of the power supply device is connected to the electrode structure 10, and the cathode output end of the power supply device is connected to the substrate carrier 30.
  • a power supply device not shown
  • the anode output end of the power supply device is connected to the electrode structure 10
  • the cathode output end of the power supply device is connected to the substrate carrier 30.
  • 9 is a perspective view of a substrate carrier provided in some embodiments of the present disclosure
  • FIG. 10 is a front view of a substrate carrier provided in some embodiments of the present disclosure.
  • the substrate carrier 30 It includes an energizing portion 31 and a clamping portion 32, and the energizing portion 31 and the clamping portion 32 enclose a frame structure, thereby clamping the substrate 01.
  • the substrate carrier 30 can also adopt other structures, which are not limited here.
  • the number of electrode structures 10 is two, and the two electrode structures 10 are arranged opposite to each other and are respectively located on both sides of the substrate 01 loaded by the substrate carrier 30, so that both surfaces of the substrate 01 are electroplated at the same time.
  • the substrate carrier 30 is used to load two substrates 01 at the same time, so that the two substrates 01 can be electroplated at the same time, thereby increasing productivity and saving electroplating solution.
  • the electrochemical deposition apparatus further includes: a gas pipeline 40.
  • FIG. 11 is a schematic diagram of a gas pipeline provided in some embodiments of the disclosure, wherein the gas pipeline 40 is arranged in the containing tank 20v, and Located at the bottom of the containing tank 20v, as shown in FIG. 11, the gas pipeline 40 has an air inlet 41 and a plurality of air outlets 42. It is used to discharge gas into the holding tank 20v to agitate the electroplating solution in the holding tank 20v with air. Before performing the electrodeposition process, air agitation of the electroplating solution is carried out to achieve sufficient mixing of the electroplating solution and ensure the uniformity of film formation in the subsequent electrodeposition process.
  • the electrochemical deposition apparatus further includes a shunt plate 50 corresponding to the electrode structure one-to-one, and the shunt plate 50 is arranged on the side of the corresponding electrode structure 10 facing the substrate carrier 30 .
  • Fig. 12 is a perspective view of a shunt plate provided by some embodiments of the present disclosure
  • Fig. 13 is a cross-sectional view along line AA in Fig. 12, as shown in Figs.
  • the liquid pipeline 52, the containing housing 51 includes: a first wall, a second wall 512 disposed opposite to the first wall 511, and a side wall 513 connected between the first wall 511 and the second wall 512, the first wall 511 Located on the side of the second wall 512 facing the substrate carrier 30, the first wall 511, the second wall 512 and the side wall 513 enclose a containing cavity.
  • the containing shell 51 is provided with a liquid inlet 51a and a plurality of liquid outlets 51b Both the liquid inlet 51a and the liquid outlet 51b are in communication with the containing cavity, and the liquid outlet 51b is arranged on the first wall 511.
  • the liquid inlet 51a is provided on the side wall 513, and the number of the liquid inlet 51a can also be multiple.
  • the liquid return pipe 52 passes through the accommodating cavity, and the liquid return pipe 52 passes through the housing shell 51 along the thickness direction of the distribution plate 50.
  • the openings at both ends of the liquid return pipe 52 may be respectively located on the first wall 511 and the second wall 512.
  • the openings at both ends of the liquid return pipe 52 may also protrude from the first wall 511 and the second wall 512, respectively.
  • the splitter plate 50 may be fixed in the containing groove 20v, thereby dividing the containing groove 20v into a plurality of containing spaces.
  • FIG. There are three accommodation spaces.
  • the two electrode structures and the substrate are respectively located in three accommodating spaces.
  • the electroplating solution passes through the liquid inlet into the containing chamber and is output from the liquid outlet 51b, and the liquid on both sides of the splitter plate 50 circulates through the liquid return pipeline 52.
  • the pore size and distribution density of the liquid outlet 51b can be adjusted as required, so as to further improve the uniformity of the thickness of the film deposited on the substrate.
  • the electrochemical deposition apparatus further includes a drain line 71 and a filter device 60, and the inlet of the drain line 71 is in communication with the containing tank 20v.
  • the filter device 60 has a filter inlet and a filter outlet. The filter inlet is in communication with the outlet of the drain pipe 71, and the filter outlet is in communication with the liquid inlet of the splitter plate 50.
  • the filter device 60 is used to filter the electroplating solution flowing into the filter inlet. In order to filter out some impurities in the electroplating solution.
  • the drain pipe 71 includes an upright portion 711 extending along the height direction of the tank body 20 and a horizontal portion 712 located at the bottom of the electrochemical deposition device.
  • the tank body 20 is located at the horizontal portion 712.
  • the inlet of the upright portion 711 is in communication with the drain port on the tank body 20
  • the outlet of the upright portion 711 is in communication with the inlet of the horizontal portion 712
  • the outlet of the horizontal portion 712 is in communication with the filtration inlet of the filter device 60, thereby connecting the accommodating tank 20v
  • Upright portions 711 are provided on the side walls on opposite sides of the trough body 20.
  • the electrochemical deposition equipment further includes a power structure such as an electric pump 73, which is used to drive the electroplating solution in the drain pipeline to enter the filter device for filtration.
  • a power structure such as an electric pump 73, which is used to drive the electroplating solution in the drain pipeline to enter the filter device for filtration.
  • the electrochemical deposition apparatus may further include an exhaust pipe 72 that communicates with the top of the upright portion 711 to exhaust the gas in the electroplating solution.
  • the electrochemical deposition apparatus further includes a driving device for driving the substrate carrier 30 to move along the length direction and/or the width direction of the substrate.
  • the driving device includes a power source and a bracket 81.
  • the substrate carrier 30 is arranged on the bracket 81.
  • the power source is connected to the substrate carrier 30 to drive the substrate carrier 30 to move, thereby improving the substrate The uniformity of film formation.
  • the electrochemical deposition equipment further includes: an ion supplement device, which is in communication with the containing tank 20v, and is used to supplement the electroplating solution in the containing tank 20v with ions for electroplating.
  • an ion supplement device which is in communication with the containing tank 20v, and is used to supplement the electroplating solution in the containing tank 20v with ions for electroplating.
  • the ion supplement device can be used to supplement the electroplating solution in the containing tank 20v with ions for electroplating in time to ensure that a film with a required thickness can be formed on the substrate.
  • the electrochemical deposition apparatus further includes a monitoring device 90 for monitoring at least one of the temperature, liquid level, and ion concentration of the electroplating solution in the holding tank 20v.
  • a monitoring device 90 for monitoring at least one of the temperature, liquid level, and ion concentration of the electroplating solution in the holding tank 20v.
  • the monitoring device performs monitoring, at least one of temperature, liquid level, and ion concentration is monitored in real time or according to a predetermined frequency.
  • the electrochemical deposition equipment also includes an auxiliary tank body 93 located on one side of the tank body 20.
  • the auxiliary tank body 93 has an auxiliary tank, and the auxiliary tank is in communication with the receiving tank 20v.
  • the monitoring device 90 may include At least one of a thermometer, a level gauge, and a concentration detector in the auxiliary tank.
  • the monitoring device includes a thermometer 91 and a level gauge 92.
  • the electrochemical deposition equipment further includes a heating element (not shown) arranged in the auxiliary tank for heating the electroplating solution.
  • the electrochemical deposition equipment further includes a control device 94, and the control system 94 is configured to control the heating temperature of the heating element according to the temperature monitored by the thermometer.
  • the control system 94 can also control the amount of electroplating solution input from the electroplating solution input device to the splitter plate 50 according to the level monitored by the level gauge;
  • the tank 20v is supplemented with metal ions for electroplating.
  • the monitoring device 90 can also be used to monitor whether the containing tank 20 is leaking. For example, when a leak in the containing tank 20 is detected, a reminder signal is generated to remind the operator.
  • the above is an introduction to the electrode structure and electrochemical deposition equipment in the embodiments of the present disclosure. It can be seen that in the present disclosure, the voltage uniformity of different positions on the electrode structure is improved, so that the electric field in the area where the substrate to be electroplated is located The uniformity is improved, and the uniformity of film formation is improved. Therefore, the electrochemical deposition equipment using the electrode structure can be used for electrochemical deposition on large-sized substrates. In addition, the electrochemical deposition equipment can simultaneously perform electrochemical deposition on multiple substrates, thereby improving production efficiency.

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  • Chemical Kinetics & Catalysis (AREA)
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Abstract

本公开提供一种用于电化学沉积设备中的电极结构，包括：支撑架；设置在所述支撑架上的金属网和多个导电条，所述导电条与所述金属网电连接，所述导电条包括：导电主体和包覆所述导电主体的保护层，所述导电主体的导电率大于所述保护层的导电率。本公开还提供一种电化学沉积设备及其沉积方法。本公开能够提高电化学沉积的成膜均匀性。

Description

电极结构、电化学沉积设备及其电化学沉积方法
相关申请的交叉引用
本申请要求于2020年5月9日提交至中国知识产权局的中国专利申请NO.202020753538.0的优先权，所公开的内容以引用的方式合并于此。
技术领域
本公开涉及显示产品的生产领域，具体涉及一种用于电化学沉积设备中的电极结构、电化学沉积设备以其使用方法。
背景技术
电化学沉积工艺是一种低成本的化学性成膜方式，可以沉积得到2～20um厚的具备较低阻值的金属层。目前的电化学沉积设备通常适用于对尺寸较小的玻璃基板进行电化学沉积，而对于尺寸较大的玻璃基板，很容易出现成膜不均匀的问题。
公开内容
本公开旨在至少解决现有技术中存在的技术问题之一，提出了一种用于电化学沉积设备中的电极结构和电化学沉积设备。
第一方面，本公开提供一种电极结构，其用于电化学沉积设备，所述电极结构包括：支撑架；设置在所述支撑架上的金属网和多个导电条，其中，所述导电条与所述金属网电连接，所述导电条包括：导电主体和包覆所述导电主体的保护层，所述导电主体的导电率大于所述保护层的导电率。
在一些实施例中，所述多个导电条中的至少一者沿所述金属网的长度方向延伸，其余的所述多个导电条中的至少一者沿所述金属网的宽度方向延伸。
在一些实施例中，所述电极结构被划分为多个分区，每个分区中均设置有所述支撑架、所述导电条、和所述金属网，所述金属网位于不同分区的部分相互绝缘。
在一些实施例中，多个所述分区包括中部分区和环绕所述中部分区的至少一个边缘分区。
在一些实施例中，所述中部分区沿第一方向的尺寸为所述电极结构沿所述第一方向的尺寸的1/3至3/5，所述中部分区沿第二方向的尺寸为所述电极结构沿所述第二方向的尺寸的1/3至3/5，所述第一方向为所述电极结构的长度方向，所述第二方向为所述电极结构的宽度方向。
在一些实施例中，所述支撑架的材料与所述金属网的材料相同。
第二方面，本公开提供一种电化学沉积设备，包括：具有容纳槽的槽体、基板载具和前述的电极结构，所述容纳槽用于容纳电镀液，所述电极结构设置在所述容纳槽中，所述基板载具用于装载待电镀的基板。
在一些实施例中，所述电化学沉积设备还包括与所述电极结构对应的分流板，所述分流板设置在相应的电极结构朝向所述基板载具的一侧，其中，所述分流板包括：容纳壳体和多个回液管路，所述容纳壳体包括：第一壁、与所述第一壁相对设置的第二壁以及连接在所述第一壁与所述第二壁之间的侧壁，所述第一壁位于所述第二壁朝向所述基板载具的一侧，所述第一壁、所述第二壁和所述侧壁围成容纳腔，所述容纳壳体上设置有进液口和多个出液口，所述进液口和所述多个出液口均与所述容纳腔连通，所述多个出液口设置在第一壁上；所述回液管路穿过所述容纳腔，所述回液管路沿所述分流板的厚度方向穿过所述容纳壳体。
在一些实施例中，所述电化学沉积设备还包括排液管路，所述排液管路的入口与所述容纳槽连通，所述电化学沉积设备还包括：过滤装置，所述过滤装置具有过滤入口和过滤出口，所述过滤入口与所述排液管路的出口连通，所述过滤出口与所述分流板的进液口连通，所述过滤装置用于对流入其过滤入口的电镀液进行过滤。
在一些实施例中，所述排液管路包括沿所述槽体的高度方向延伸的直立部和位于所述电化学沉积设备底部的水平部，所述直立部的入口与所述槽体上的排液口连通，所述直立部的出口与所述水平部的入口连通，所述水平部的出口与所述过滤装置的过滤入口连通，所述电化学沉积设备还包括排气管路，所述排气管路与所述直立部的顶部连通。
在一些实施例中，所述电化学沉积设备还包括：输气管路，所述输气管路设置在所述容纳槽内、且位于所述容纳槽底部，所述气体管路具有进气口和多个出气口，所述气体管路的进气口与气源连通，所述出气口用于向所述容纳槽内排出气体。
在一些实施例中，所述电化学沉积设备还包括：离子补充装置，所述离子补充装置与所述容纳槽连通，用于向所述容纳槽中的电镀液补充电镀用离子。
在一些实施例中，所述电化学沉积设备还包括监测装置，用于监测所述容纳槽中的电镀液的温度、液位、离子浓度中的至少一者。
在一些实施例中，所述电化学沉积设备还包括与所述基板载具连接的驱动装置，所述驱动装置用于驱动所述基板载具沿基板的长度方向和/或宽度方向移动。
在一些实施例中，所述电极结构的数量为两个，两个所述电极结构相对设置，并分别位于所述基板载具所装载的基板两侧。
在一些实施例中，所述电化学沉积设备还包括电源装置，所述电源装置的阳极输出端与所述电极结构连接，所述电源装置的阴极输出端与所述基板载具连接。
第三方面，本公开提供一种电化学沉积方法，其应用于前述的电化学沉积设备，包括：将所述基板装载在所述基板载具上；对所述基板进行酸洗；通过所述基板载具将所述基板移动至所述容纳槽中，以对所述基板进行电化学沉积；将所述基板移出所述容纳槽，并对所述基板进行水洗；对所述基板进行抗氧化处理；以及对所述基板进行纯水清洗，并进行风刀烘干。
在一些实施例中，在对所述基板进行电化学沉积时，通过控制 电流密度来实现电镀药水的沉积。
附图说明
附图是用来提供对本公开的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本公开，但并不构成对本公开的限制。在附图中：
图1为本公开的一些实施例中提供的电极结构的第一表面示意图；
图2为本公开的一些实施例中提供的电极结构的第二表面示意图；
图3为本公开的另一些实施例中提供的电极结构的示意图；
图4为本公开的一些实施例中提供的电化学沉积设备的整体结构的立体图；
图5为本公开的一些实施例中提供的电化学沉积设备的部分结构的立体图；
图6为本公开的一些实施例中提供的电化学沉积设备的部分结构的侧视图；
图7为本公开的一些实施例中提供的电化学沉积设备的部分结构的俯视图；
图8为本公开的一些实施例中提供的电化学沉积设备的部分结构的仰视图；
图9为本公开的一些实施例中提供的基板载具的立体图；
图10为本公开的一些实施例中提供的基板载具的正视图；
图11为本公开的一些实施例中提供的输气管路的示意图；
图12为本公开的一些实施例提供的分流板的立体图；
图13为沿图12中AA线的剖视图；
图14为本公开的一些实施例提供的电化学沉积方法的流程图。
具体实施方式
以下结合附图对本公开的具体实施方式进行详细说明。应当理解的 是，此处所描述的具体实施方式仅用于说明和解释本公开，并不用于限制本公开。
图1为本公开的一些实施例中提供的电极结构的第一表面示意图，图2为本公开的一些实施例中提供的电极结构的第二表面示意图，第一表面和第二表面为电极结构相对的两面，该电极结构10用于电化学沉积设备中，如图1和图2所示，该电极结构包括：支撑架11、设置在支撑架11上的金属网12和多个导电条13。其中，导电条13与金属网12电连接，导电条13包括：导电主体和包覆导电主体的保护层，导电主体的导电率大于保护层的导电率。保护层用于防止导电主体与电镀液中的金属离子发生反应，保护层的活泼性小于导电主体的活泼性。例如，导电条13为钛包铜结构，其中导电主体的主要成分为铜，保护层的主要成分为钛金属。
其中，在进行电化学沉积工艺时，待电镀的基板装载在基板载具上，该基板载具作为阴极，连接电源的负向输出端；电极结构10作为阳极，连接电源的正向输出端，从而在阳极与待电镀的基板之间形成电场，进而使电镀液中的金属离子(如，Cu离子或Ni离子或Ag离子等)附着在基板上，形成电镀膜。
在对大尺寸的基板进行电化学沉积时，电极结构10的尺寸也就需要相应地增大，这样就容易导致电极结构10的边缘和中部的电压存在差异，导致基板边缘和中心的电场存在差异，进而导致基板上形成的膜厚均匀性较差。
而在本公开实施例中，支撑架11上设置有多个导电条13，导电条13包括导电主体和保护层，导电主体采用导电率更好的金属材料制成，从而可以减小电极结构整体的电阻率，使金属网12不同位置的电压均匀性提高，进而使待电镀的基板所在区域中的电场均匀性提高，提高成膜的均一性。
在一些实施例中，如图2所示，多个导电条13中的至少一者沿金属网12的长度方向(如图2中的左右方向)延伸，其余的导电条13中 的至少一者沿金属网12的宽度方向(如图2中的上下方向)延伸。
在一些实施例中，支撑架11的材料与金属网12的材料相同，例如，二者均采用钛制成。
可选地，支撑架11包括支撑架主体11a和加电部11b，金属网12固定在支撑架主体11a上，加电部11b用于与电源装置连接，加载电信号。
在一些实施例中，加电部11b远离支撑架主体11a的一端的宽度小于加电部11b靠近支撑架主体11a的一端的宽度，例如，加电部11b靠近支撑架主体11a的一端的宽度为加电部11b远离支撑架主体11a的一端的宽度的1～1.4倍。
在一些实施例中，如图2所示，金属网12为一体结构并呈矩形，其中一个导电条13沿电极结构的长度方向延伸，其余导电条13沿电极结构的宽度方向延伸，并从阳极结构10的一侧延伸至另一侧。
在一具体示例中，金属网12的长度为宽度的1～1.5倍。
在一些实施例中，如图2所示，支撑架主体11a包括横向支撑条111a和纵向支撑条111b，横向支撑条111a沿第一方向(即，电极结构的长度方向，也即图2中的左右方向)延伸，纵向支撑条111b沿第二方向(即，电极结构的宽度方向，也即图2中的上下方向)延伸。可选地，每相邻两个纵向支撑条111b均设置有一个与纵向支撑条111b平行的导电条13。
在一些实施例中，相邻两个横向支撑条111a之间的距离与相邻两个纵向支撑条111b之间的距离大致相等。相邻两个纵向支撑条111b与二者之间的导电条13的距离大致相等，从而使电极结构不同位置所对应的电场更加均匀。
图3为本公开的另一些实施例中提供的电极结构的示意图，如图3所示，阳极结构10被划分为多个分区(A1、A2)，支撑架主体包括位于每个分区中的支撑部111，每个分区中均设置有多个导电条13，金属网12位于不同分区的部分相互绝缘。为了保证金属网12位于不同分区 的部分是绝缘间隔的，当支撑架11采用导电材料制成时，可以将支撑架11位于不同分区的部分也间隔开，并利用绝缘连接件将阳极结构位于不同分区的部分固定连接在一起。
当电极结构10划分为多个分区时，可以对不同分区的电压分别进行控制，从而提高不同分区对应的电场均一性，从而提高基板上的成膜均一性。
例如，在进行电沉积时，电极结构10容易产生边缘放电，从而导致边缘的电场强度大于中部区域的电场强度，进而导致基板上所形成的膜层边缘较厚，中心较薄。为了防止这一现象，本公开实施例中的电极结构的多个分区可以包括：中部分区A1和环绕该中部分区A1的至少一个边缘分区A2，通过对中部分区A1和每个边缘分区A2的电压进行分别控制，来提高成膜的均一性。
在一些实施例中，例如图3所示，中部分区A1沿第一方向的尺寸L11为边缘分区A2沿第一方向L12的尺寸的1～3倍，中部分区A1沿第二方向的尺寸L21为边缘分区A2沿第二方向L22的尺寸的1～3倍，第一方向为电极结构的长度方向，第二方向为电极结构的宽度方向。换言之，中部分区沿第一方向的尺寸为电极结构沿第一方向的尺寸的1/3至3/5，中部分区沿第二方向的尺寸为电极结构沿第二方向的尺寸的1/3至3/5。
作为本公开的另一方面，提供一种电化学沉积设备，图4为本公开的一些实施例中提供的电化学沉积设备整体结构的立体图，图5为本公开的一些实施例中提供的电化学沉积设备的部分结构的立体图，图6为本公开的一些实施例中提供的电化学沉积设备的部分结构的侧视图，图7为本公开的一些实施例中提供的电化学沉积设备的部分结构的俯视图，图8为本公开的一些实施例中提供的电化学沉积设备的部分结构的仰视图。结合图4至图8所示，该电化学沉积设备包括：具有容纳槽20v的槽体20、基板载具30和上述实施例中的电极结构10。其中，容纳槽20v用于容纳电镀液，电极结构设置在容纳槽20v中，基板载具 30用于装载待电镀的基板。由于上述电极结构中，不同位置的电压均一性提高，因此，采用上述电极结构的电化学沉积设备进行电化学沉积时，基板所在区域中的电场均一性提高，因此，本公开实施例中的电化学沉积设备在对大尺寸(例如1850mm*1500mm)基板进行电化学沉积时，可以保证成膜的厚度均一性。
对基板进行的电化学沉积的过程包括：步骤一、将基板装载在基板载具30上；步骤二、对基板进行酸洗；步骤三、基板载具30将基板移动至容纳槽20v中，以对基板进行电化学沉积；步骤四、将基板移出容纳槽20v，并对基板进行水洗；步骤五、对基板进行抗氧化处理，以保证基板上沉积的膜层不被氧化；步骤六、对基板进行纯水清洗，并进行风刀烘干。其中，在对基板进行电化学沉积时，可以使用普通药水(电镀液)或快速沉积药水，可以通过控制电流密度来实现各种药水的沉积。
为了提高电化学沉积设备的稳定性，延长其使用寿命，可选地，槽体20采用不易变形、耐酸、耐碱的材料制成，槽体20侧壁外可以设置加强筋21。
在一些实施例中，电化学沉积设备还包括电源装置(未示出)，所述电源装置的阳极输出端与电极结构10连接，所述电源装置的阴极输出端与基板载具30连接。图9为本公开的一些实施例中提供的基板载具的立体图，图10为本公开的一些实施例中提供的基板载具的正视图，如图9和图10所示，基板载具30包括通电部31和夹持部32，通电部31和夹持部32围成框形结构，从而对基板01进行夹持。当然，基板载具30也可以采用其他结构，在此不做限定。
在一些实施例中，电极结构10的数量为两个，两个电极结构10相对设置，并分别位于基板载具30所装载的基板01两侧，从而同时对基板01的两个表面进行电镀，或者，利用基板载具30同时装载两个基板01，从而对同时对两个基板01进行电镀，进而提高产能，并节省电镀液。
在一些实施例中，电化学沉积设备还包括：输气管路40，图11为 本公开的一些实施例中提供的输气管路的示意图，其中，输气管路40设置在容纳槽20v内、且位于容纳槽20v底部，如图11所示，输气管路40具有进气口41和多个出气口42，输气管路40的进气口41与气源连通，输气管路40的出气口42用于向容纳槽20v内排出气体，以对容纳槽20v中的电镀液进行空气搅拌。在进行电沉积工艺之前，通过对电镀液进行空气搅拌，实现电镀液的充分混合，保证后续的电沉积工艺中的成膜均一性。
如图4和图5所示，在一些实施例中，电化学沉积设备还包括与电极结构一一对应的分流板50，分流板50设置在相应的电极结构10朝向基板载具30的一侧。图12为本公开的一些实施例提供的分流板的立体图，图13为沿图12中AA线的剖视图，如图12和图13所示，分流板50包括：容纳壳体51和多个回液管路52，容纳壳体51包括：第一壁、与第一壁511相对设置的第二壁512以及连接在第一壁511与第二壁512之间的侧壁513，第一壁511位于第二壁512朝向基板载具30的一侧，第一壁511、第二壁512和侧壁513围成容纳腔，容纳壳体51上设置有进液口51a和多个出液口51b，进液口51a和出液口51b均与容纳腔连通，出液口51b设置在第一壁511上。可选地，进液口51a设置在侧壁513上，且进液口51a的数量也可以为多个。回液管路52穿过容纳腔，回液管路52沿分流板50的厚度方向穿过容纳壳体51。回液管路52的两端开口可以分别位于第一壁511和第二壁512上，当然，回液管路52的两端开口也可以分别突出于第一壁511和第二壁512。
可选地，分流板50可以固定在容纳槽20v中，从而将容纳槽20v分隔为多个容纳空间，例如，如图5所示，分流板50的数量为两个，则将容纳槽20v分隔为三个容纳空间。两个电极结构和基板分别位于三个容纳空间中。在进行电化学沉积工艺时，电镀液从入液口通入容纳腔内，并从出液口51b输出，分流板50两侧的液体通过回液管路52流通。在实际应用中，可以按照需要对出液口51b的孔径和分布密度进行调整，从而进一步提高基板上沉积的膜层厚度的均一性。
在一些实施例中，如图4至图8所示，电化学沉积设备还包括排液管路71和过滤装置60，排液管路71的入口与容纳槽20v连通。过滤装置60具有过滤入口和过滤出口，过滤入口与排液管路71的出口连通，过滤出口与分流板50的进液口连通，过滤装置60用于对流入其过滤入口的电镀液进行过滤，从而滤除电镀液中的一些杂质。
可选地，如图4至图6所示，排液管路71包括沿槽体20的高度方向延伸的直立部711和位于电化学沉积设备底部的水平部712，槽体20位于水平部712上方。其中，直立部711的入口与槽体20上的排液口连通，直立部711的出口与水平部712的入口连通，水平部712的出口与过滤装置60的过滤入口连通，从而对容纳槽20v内的电镀液进行循环过滤。槽体20的相对两侧的侧壁上均设置有直立部711。
可选地，电化学沉积设备还包括电动泵73等动力结构，用于驱动排液管路中的电镀液进入过滤装置中进行过滤。
另外，如图5至图8所示，电化学沉积设备还可以包括排气管路72，排气管路72与所述直立部711的顶部连通，从而排出电镀液中的气体。
在一些实施例中，电化学沉积设备还包括驱动装置，该驱动装置用于驱动基板载具30沿基板的长度方向和/或宽度方向移动。
例如，如图4所示，驱动装置包括动力源和支架81，基板载具30设置在支架81上，动力源与基板载具30连接，以驱动基板载具30进行移动，从而可以提高基板上的成膜均一性。
在一些实施例中，电化学沉积设备还包括：离子补充装置，该离子补充装置与容纳槽20v连通，用于向容纳槽20v中的电镀液补充电镀用离子。在工艺过程中，当电镀液中的金属离子浓度降低时，可以通过离子补充装置及时向容纳槽20v中的电镀液中补充电镀用离子，以保证基板上能够形成所需厚度的膜层。
在一些实施例中，电化学沉积设备还包括监测装置90，该监测装置用于监测容纳槽20v中的电镀液的温度、液位、离子浓度中的至少一 者。可选地，监测装置进行监测时，对温度、液位、离子浓度中的至少一者进行时实时监测或按照预定频率进行监测。
如图4和图5所示，电化学沉积设备还包括位于槽体20一侧的辅助槽体93，辅助槽体93具有辅助槽，辅助槽与容纳槽20v连通，监测装置90可以包括设置在辅助槽内的温度计、液位计、浓度检测器中的至少一者。
在一具体示例中，如图4所示，监测装置包括温度计91和液位计92。另外，电化学沉积设备还包括设置在辅助槽中的加热件(未示出)，用于对电镀液进行加热。
可选地，如图4所示，电化学沉积设备还包括控制装置94，控制***94用于根据温度计监测到的温度，来控制加热件的加热温度。并且，控制***94还可以根据液位计监测到的液位来控制电镀液输入装置向分流板50输入电镀液的液量；以及根据浓度检测装置检测到的离子浓度来控制离子补充***向容纳槽20v中补充电镀用金属离子。
在一具体示例中，监测装置90还可以用于监测容纳槽20是否漏液，例如，在监测到容纳槽20发生漏液时，产生提醒信号，以提醒操作人员。
以上为对本公开的实施例中的电极结构和电化学沉积设备的介绍，可以看出，在本公开中，电极结构上不同位置的电压均匀性提高，从而使得待电镀的基板所在区域中的电场均匀性提高，提高成膜的均一性，因此，利用该电极结构的电化学沉积设备可以用于对大尺寸基板进行电化学沉积。并且，电化学沉积设备中可以同时对多个基板进行电化学沉积，从而提高生产效率。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (18)

  1. 一种电极结构，其用于电化学沉积设备，所述电极结构包括：
    支撑架；
    设置在所述支撑架上的金属网和多个导电条，其中，所述导电条与所述金属网电连接，所述导电条包括：导电主体和包覆所述导电主体的保护层，所述导电主体的导电率大于所述保护层的导电率。
  2. 根据权利要求1所述的电极结构，其中，所述多个导电条中的至少一者沿所述金属网的长度方向延伸，其余的所述多个导电条中的至少一者沿所述金属网的宽度方向延伸。
  3. 根据权利要求1所述的电极结构，其中，所述电极结构被划分为多个分区，每个分区中均设置有所述支撑架、所述导电条、和所述金属网，所述金属网位于不同分区的部分相互绝缘。
  4. 根据权利要求3所述的电极结构，其中，多个所述分区包括中部分区和环绕所述中部分区的至少一个边缘分区。
  5. 根据权利要求4所述的电极结构，其中，所述中部分区沿第一方向的尺寸为所述电极结构沿所述第一方向的尺寸的1/3至3/5，所述中部分区沿第二方向的尺寸为所述电极结构沿所述第二方向的尺寸的1/3至3/5，所述第一方向为所述电极结构的长度方向，所述第二方向为所述电极结构的宽度方向。
  6. 根据权利要求1所述的电极结构，其中，所述支撑架的材料与所述金属网的材料相同。
  7. 一种电化学沉积设备，包括：具有容纳槽的槽体、基板载具和权利要求1至6中任意一项所述的电极结构，所述容纳槽用于容纳电镀液，所述电极结构设置在所述容纳槽中，所述基板载具用于装载待电镀的基板。
  8. 根据权利要求7所述的电化学沉积设备，其中，所述电化学沉积设备还包括与所述电极结构对应的分流板，所述分流板设置在相应的电极结构朝向所述基板载具的一侧，
    其中，所述分流板包括：容纳壳体和多个回液管路，所述容纳壳体包括：第一壁、与所述第一壁相对设置的第二壁以及连接在所述第一壁与所述第二壁之间的侧壁，所述第一壁位于所述第二壁朝向所述基板载具的一侧，所述第一壁、所述第二壁和所述侧壁围成容纳腔，所述容纳壳体上设置有进液口和多个出液口，所述进液口和所述多个出液口均与所述容纳腔连通，所述多个出液口设置在第一壁上；所述回液管路穿过所述容纳腔，所述回液管路沿所述分流板的厚度方向穿过所述容纳壳体。
  9. 根据权利要求8所述的电化学沉积设备，其中，所述电化学沉积设备还包括排液管路，所述排液管路的入口与所述容纳槽连通，
    所述电化学沉积设备还包括：过滤装置，所述过滤装置具有过滤入口和过滤出口，所述过滤入口与所述排液管路的出口连通，所述过滤出口与所述分流板的进液口连通，所述过滤装置用于对流入其过滤入口的电镀液进行过滤。
  10. 根据权利要求9所述的电化学沉积设备，其中，所述排液管路包括沿所述槽体的高度方向延伸的直立部和位于所述电化学沉积设备底部的水平部，所述直立部的入口与所述槽体上的排液口连通，所述直立部的出口与所述水平部的入口连通，所述水平部的出口与所述过滤装 置的过滤入口连通，
    所述电化学沉积设备还包括排气管路，所述排气管路与所述直立部的顶部连通。
  11. 根据权利要求7所述的电化学沉积设备，其中，所述电化学沉积设备还包括：输气管路，所述输气管路设置在所述容纳槽内、且位于所述容纳槽底部，所述气体管路具有进气口和多个出气口，所述气体管路的进气口与气源连通，所述出气口用于向所述容纳槽内排出气体。
  12. 根据权利要求7所述的电化学沉积设备，其中，所述电化学沉积设备还包括：离子补充装置，所述离子补充装置与所述容纳槽连通，用于向所述容纳槽中的电镀液补充电镀用离子。
  13. 根据权利要求7所述的电化学沉积设备，其中，所述电化学沉积设备还包括监测装置，用于监测所述容纳槽中的电镀液的温度、液位、离子浓度中的至少一者。
  14. 根据权利要求7所述的电化学沉积设备，其中，所述电化学沉积设备还包括与所述基板载具连接的驱动装置，所述驱动装置用于驱动所述基板载具沿基板的长度方向和/或宽度方向移动。
  15. 根据权利要求7所述的电化学沉积设备，其中，所述电极结构的数量为两个，两个所述电极结构相对设置，并分别位于所述基板载具所装载的基板两侧。
  16. 根据权利要求7所述的电化学沉积设备，其中，所述电化学沉积设备还包括电源装置，所述电源装置的阳极输出端与所述电极结构连接，所述电源装置的阴极输出端与所述基板载具连接。
  17. 一种电化学沉积方法，其应用于权利要求7所述的电化学沉积设备，包括：
    将所述基板装载在所述基板载具上；
    对所述基板进行酸洗；
    通过所述基板载具将所述基板移动至所述容纳槽中，以对所述基板进行电化学沉积；
    将所述基板移出所述容纳槽，并对所述基板进行水洗；
    对所述基板进行抗氧化处理；以及
    对所述基板进行纯水清洗，并进行风刀烘干。
  18. 根据权利要求17所述的电化学沉积方法，其中，在对所述基板进行电化学沉积时，通过控制电流密度来实现电镀药水的沉积。
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