WO2021152525A1 - Ionic element, method of manufacturing the same and semiconductor device - Google Patents

Ionic element, method of manufacturing the same and semiconductor device Download PDF

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Publication number
WO2021152525A1
WO2021152525A1 PCT/IB2021/050709 IB2021050709W WO2021152525A1 WO 2021152525 A1 WO2021152525 A1 WO 2021152525A1 IB 2021050709 W IB2021050709 W IB 2021050709W WO 2021152525 A1 WO2021152525 A1 WO 2021152525A1
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Prior art keywords
end faces
ion layer
pair
region
ions
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PCT/IB2021/050709
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French (fr)
Inventor
Benjamin SACÉPÉ
LIEB (SEIDEMANN), Johanna
Shimpei Ono
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Central Research Institute Of Electric Power Industry
Universite Grenoble Alpes
Centre National De La Recherche Scientifique
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Publication of WO2021152525A1 publication Critical patent/WO2021152525A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/021—Electrets, i.e. having a permanently-polarised dielectric having an organic dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/54—Electrolytes
    • H01G11/56—Solid electrolytes, e.g. gels; Additives therein
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/028—Electrets, i.e. having a permanently-polarised dielectric having a heterogeneous dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/022—Electrolytes; Absorbents
    • H01G9/025—Solid electrolytes
    • H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Definitions

  • the current ISD flows across the electrodes 231 and 232 as described above and the switching device 3 is turned on (is placed into an electrically-conductive state) as denoted by an arrow P2 in , when the value of the voltage VSD across the electrodes 231 and 232 is equal to or greater than the threshold voltage Vth (VSD ⁇ Vth), i.e., when the absolute value of the voltage VSD as the negative voltage becomes equal to or greater than the absolute value of the threshold voltage Vth.
  • the switching device 3 based on the ionic element 1B forms the channel as the electrically-conductive region derived from the holes "h" to allow the current to flow across the two terminals.
  • the ionic element according to the present Modification Example may have a configuration in which an amount of electric charges of the ions, e.g., the cations 122c, the anions 122a, or both, is made variable in the fixed-arrangement region 41, and the amount of electric charges is settable to any amount of electric charges, i.e., settable on an as-necessary basis.
  • the fixed-arrangement region 41 may be entirely or partially formed on an end face.
  • the electronic apparatus 5 may include one functional device 2 (one functional device 2A or 2B or one switching device 3) that has one or a plurality of ionic elements 1, 1A, or 1B.
  • the electronic apparatus 5 may also include a package 50 (i.e., a sealing member) that seals components, including the functional device 2, from the outside.
  • a package 50 i.e., a sealing member
  • Providing the package 50 prevents intrusion of an external substance, such as moisture, from the outside into the components including the functional device 2, making it possible to improve durability of the components including the functional device 2.
  • the durability of the components may be, in other words, a device life or reliability.
  • the ionic element according to any one of (1) to (3), in which the pair of end faces include: a fixed-arrangement region in which the ions are chemically arranged and chemically fixed; and a non-fixed-arrangement region in which the ions are dispersed.

Abstract

An ionic element according to an embodiment includes an ion layer. The ion layer includes a polymer, an electrolyte, and a pair of end faces. The polymer is a base material. The electrolyte includes ions having a multiple bonding property. The ions are chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces.

Description

Ionic element, method of manufacturing the same, functional device, and electronic apparatus BACKGROUND
The disclosure relates to an ionic element having an ion layer, a method of manufacturing the same, and a functional device and an electronic apparatus each having the ionic element.
Devices having various functions have been proposed as ionic elements. Such devices, or the ionic elements, each have an ion layer that includes an electrolyte such as an ionic liquid. For example, reference is made to Q. Pei, A. J. Heeger et al., Science, vol. 273, issue 5283, pages 1833-1836, (1996) (DOI: 10.1126/science.273.5283.1833).
SUMMARY
[000 3 ] An ionic element comprising
an ion layer including a polymer, an electrolyte, and a pair of end faces, the electrolyte including ions, the ions being cations and anions,
at least a part of the cations and/or at least a part of the anions having a multiple bonding property and being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces.
[000 4 ] A semiconductor device according to one embodiment of the technology includes: an ion layer including a polymer, an electrolyte, and a pair of end faces, the electrolyte including ions, the ions being cations and anions; and
a controlled semiconductor layer provided on at least one of the pair of end faces and controlled by the ion layer,
at least a part of the cations and/or at least a part of the anions having a multiple bonding property and being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces,
the chemical arrangement and the chemical fixation of the cations and/or the anions in the ion layer controlling a physical property, such as an electric charge amount, a carrier characteristic, or electric conductivity, and/or a thermoelectric conversion property of the controlled semiconductor layer.
[000 5 ] A semiconductor apparatus according to one embodiment of the technology is provided with one or a plurality of semiconductor devices comprising an ion layer including a polymer, an electrolyte, and a pair of end faces, the electrolyte including ions, the ions being cations and anions, at least a part of the cations and/or at least a part of the anions having a multiple bonding property and being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces; and
a controlled semiconductor layer provided on at least one of the pair of end faces and controlled by the ion layer,
at least a part of the cations and/or at least a part of the anions having a multiple bonding property and being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces
[000 6 ] An ionic element manufacturing method according to one embodiment of the technology includes: forming an ion layer that includes a polymer, an electrolyte, and a pair of end faces, the electrolyte including ions, the ions being cations and anions, at least a part of the cations and/or at least a part of the anions having a multiple bonding property;
attaching electrodes to the respective end faces;
arranging the ions in the ion layer in a region that is adjacent to at least one of the pair of end faces, through applying, with the electrodes, a voltage across the pair of end faces; the voltage being below the chemical window of ionic liquids, or preferably below 4 V;
causing the ions to be chemically arranged and chemically fixed in the region that is adjacent to the at least one of the pair of end faces, through polymerizing the ions having multiple bonding property and the polymer with each other, the polymerizing of the ions having multiple bonding property and the polymer comprises applying light to the ion layer, supplying heat to the ion layer, or feeding a polymerization initiator to the ion layer; and
removing the electrodes from the respective end faces.
[00 07 ] The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate example embodiments and, together with the specification, serve to explain the principles of the technology.
is a schematic cross-sectional view of a configuration example of an ionic element according to one example embodiment of the technology.
is a flowchart illustrating an example of a method of manufacturing the ionic element illustrated in in order of process steps.
is a schematic cross-sectional view of an example configuration of the ionic element upon a manufacturing process step illustrated in .
is a schematic cross-sectional view of an example configuration upon the manufacturing process step subsequent to the process step illustrated in .
and
are each a schematic cross-sectional view of a configuration example of a functional device that includes the ionic element illustrated in .
and
are each a schematic cross-sectional view for describing example workings of the functional device illustrated in FIGs. 5A and 5B.
and
are each a schematic cross-sectional view of a configuration example of an ionic element according to Modification Example 1.
and
are each a schematic cross-sectional view of a configuration example of a functional device according to the Modification Example 1.
is a schematic cross-sectional view of a configuration example of a switching device as an example of the functional device, according to Modification Example 2.
;
and
are each a schematic cross-sectional view for describing an operation of the switching device illustrated in .
and
are each a schematic circuit diagram for describing an operation of the switching device illustrated in .
is a diagram illustrating an example of characteristics of the switching device illustrated in .
,
and
are each a schematic plan view of a configuration example of the ionic element according to Modification Example 3.
is a diagram for describing a configuration example of an ionic element according to Modification Example 4.
and
are each a block diagram illustrating a configuration example of an electronic apparatus according to Application Example.
DETAILED DESCRIPTION
[00 08 ] Hereinafter, some example embodiments of the technology will be described in detail with reference to the drawings. Note that the following description is directed to illustrative examples of the technology and not to be construed as limiting to the technology. Factors including, without limitation, numerical values, shapes, materials, components, positions of the components, and how the components are coupled to each other are illustrative only and not to be construed as limiting to the technology. Further, elements in the following example embodiments which are not recited in a most-generic independent claim of the technology are optional and may be provided on an as-needed basis. The drawings are schematic and are not intended to be drawn to scale. Note that the like elements are denoted with the same reference numerals, and any redundant description thereof will not be described in detail. The description will be given in the following order.
1. Example Embodiment (An example in which both cations and anions are chemically arranged and chemically fixed)
2. Modification Examples
Modification Example 1 (An example in which only cations or anions are chemically arranged and chemically fixed)
Modification Example 2 (Application to a switching device configured as a field-effect diode)
Modification Example 3 (An example of an ionic element having a fixed-arrangement region and a non-fixed arrangement region)
Modification Example 4 (An example of an ionic element in which an amount of electric charges of ions in the fixed-arrangement region is made variable)
3. Application Examples (examples of application of an ionic element to an electronic apparatus)
4. Other Modification Examples
[000 9 ] In general, it is desirable that an ionic element, as well as various devices, units, apparatuses, etc., that use the ionic element, be able to improve convenience of a user.
[00 10 ] It is desirable to provide an ionic element, a method of manufacturing the same, a functional device, and an electronic apparatus that are able to improve convenience.
[1. Example Embodiment]
[Configuration of Ionic Element]
[0011] schematically illustrates an example of a cross-sectional configuration (a Z-X cross-sectional configuration example) of an ionic element (ionic element 1) according to an example embodiment of the technology. As will be described later in greater detail, the ionic element 1 of the present example embodiment may be an element that functions as a so-called electret. The ionic element 1 includes an ion layer 12.
[0012] Referring to , the ion layer 12 includes a polymer 121 and an electrolyte 122. The electrolyte 122 may be electrolyte molecules. The ion layer 12 may have a configuration in which the electrolyte 122 and the polymer 121 are mixed at a predetermined mixing ratio. For example, the electrolyte 122 and the polymer 121 may be mixed at a predetermined mixing weight ratio or at a predetermined mixing volume ratio. In some example embodiments, the mixing ratio of the electrolyte 122 and the polymer 121 in the ion layer 12 may be 1:m (electrolyte 122:polymer 121), where "m" is equal to or greater than 0.05 (m≥0.05). One reason is that this is a range of a limit in which the ion layer 12 is formable. For example, such an ion layer 12 may have a thickness in a range from about 0.1 μm to about μm.
[Polymer 121]
[ 00 1 3 ] The polymer 121 serves as a base material of the ion layer 12. For example, the polymer 121 may include a polymer material. In some example embodiments, the polymer material may include an acrylic material. In some example embodiments, the polymer material may include an organic material such as an acrylate-based polymer. In an example embodiment where the organic material is used as the polymer 121, the molecular weight is increased, allowing for easier formation of the ion layer 12.
[ 00 1 4 ] In some example embodiments, in the ion layer 12, the polymer 121 may include a material that exhibits adhesiveness such that at least one of a pair of end faces (a front face and a back face) that are opposed to each other has adhesiveness. In an example embodiment, the polymer 121 may include an acrylic material or an acrylate-based polymer. Such an example embodiment where at least one of the end faces of the ion layer 12 has the adhesiveness makes it easier to attach, to the ion layer 12, a later-described member including an electrode such as electrode 111 or 112 and a layer such as controlled layer 21 or 22. In other words, it is possible to attach such a member to the ion layer 12 simply by adhering the member to the ion layer 12.
[Electrolyte 122]
[0015] The electrolyte 122 may have molecules that are disposed in the polymer 121. For example, the electrolyte 122 may be dispersed in a form of ions in the ion layer 12, as schematically illustrated by way of example in . In other words, the electrolyte 122 may have molecules that are ionized to be cations 122c and anions 122a. One reason is that the polymer 121 functions as a dispersant of the electrolyte 122.
[ 00 1 6 ] The electrolyte 122 includes ions (the cations 122c and the anions 122a) having a multiple bonding property. For example, the ions (the cations 122c and the anions 122a) may have a double bonding property or a triple bonding property. In some example embodiments, an ionic liquid may be used as the electrolyte 122. As described later in greater detail, such an example embodiment where the ionic liquid is used makes it easier for the ions, i.e., the cations 122c and the anions 122a, to be chemically arranged and chemically fixed in the ion layer 12.
[ 00 17 ] For example, the ionic liquid may have any combination of the following cations 122c and the following anions 122a. Such cations 122c, such anions 122a, or both may have a multiple bonding group.
[ 00 18 ] (A) Cations 122c
• Imidazolium-based cations:
1-methyl-3-methylimidazolium (MMI);
1-ethyl-3-methylimidazolium (EMI);
1-propyl-3-methylimidazolium (PMI);
1-butyl-3-methylimidazolium (BMI);
1-pentyl-3-methylimidazolium (PeMI);
1-hexyll-3-methylimidazolium (HMI);
1-Octyl-3-methylimidazolium;
1-oxyl-3-methylimidazolium (OMI);
1-hexadecyl-3-methylimidazolium;
1-Butyl-2,3-dimethulimidazolium; and
1,2-dimethyl-3-propylimidazolium(DMPI).
• Pyridinium-based cations:
1-methl-1-propylpiperidinium (PP13);
1-methyl-1-propylpyrrolidinium (P13);
1-methyl-1-butylpyrrolidinium (P14); and
1-butyl-1-methylpyrrolidinium (BMP).
• Ammonium-based cations:
trimethylpropylammonium (TMPA);
trimethyloctylammonium (TMOA);
trimethylhexylammonium (TMHA);
trimethylpentylammonium (TMPeA); and
trimethylbutylammonium (TMBA).
• Pyrazolium-based cations:
1-ethyl-2,3,5-trimethylpyrazolium (ETMP);
1-butyl-2,3,5-trimethylpyrazolium (BTMP);
1-propyl-2,3,5-trimethylpyrazolium (PTMP);
1-hexyl-2,3,5-trimethylpyrazolium (HTMP);
1-Buthylpyridium; and
1-Hexylpyridium.
(B) Anions 122a:
bis(trifluoromethanesulfonyl) imide (TFSI);
bis(fluorosulfonyl) imide (FSI);
bis(perfluoroethylsulfonyl) imide (BETI);
tetrafluoroborate (BF4); and
hexafluorophosphate (PF6).
[0019] As schematically illustrated in , the ions (the cations 122c or the anions 122a) are chemically arranged and chemically fixed in the ion layer 12 in a region that is adjacent to at least one of the pair of end faces (the front face and the back face). In an example embodiment illustrated in , the cations 122c may be chemically arranged and fixed in the ion layer 12 in a region that is adjacent to one of the end faces (e.g., the back face), and the anions 122a may be chemically arranged and fixed in the ion layer 12 in a region that is adjacent to the other of the end faces (e.g., the front face). In some example embodiments, the ions (the cations 122c or the anions 122a) and the polymer 121 may be polymerized with each other to allow the ions to be chemically arranged and fixed, or to be chemically arranged and fixed semi-permanently, as will be described later in greater detail.
[Method of Manufacturing Ionic element]
[0020] The ionic element 1 may be manufactured as illustrated by way of example in . is a flowchart illustrating an example of a method of manufacturing the ionic element 1 in the order of process steps.
[A. Formation of Ion Layer]
[0021] Referring by way of example to , formation of an ion layer 10 may be performed first (step S11 of ). The ion layer 10 includes the polymer 121 and the electrolyte 122, and has the pair of end faces (the front face and the back face) that are opposed to each other. For example, the polymer 121 may include any of the materials described by way of example above. The electrolyte 122 may include any of the materials described by way of example above, such as the ionic liquid. It is to be noted that the ion layer 10 at this stage includes the ions (the cations 122c and the anions 122a) that are dispersed in the polymer 121, unlike the ion layer 12 described above.
[ 00 2 2 ] Upon forming the ion layer 10, first, the polymer 121, the electrolyte 122, and an amphiphilic substance may be mixed in a predetermined solvent to fabricate a mixture. The polymer 121 and the electrolyte 122 each may include any of the materials described above. The amphiphilic substance may be a substance having amphiphilic molecules, such as a leveling agent. For example, the predetermined solvent may be a high boiling point solvent, such as chlorobenzene or dichlorobenzene. Non-limiting examples of the amphiphilic substance may include a surfactant. Non-limiting examples of the surfactant may include a fluorine-based surfactant. Non-limiting examples of the fluorine-based surfactant may include: perfluoroalkylsulfonic acid (CF3(CF2)nSO3H); perfluorooctanesulfonic acid (PFOS: perfluorooctanesulfonate); perfluoroalkyl carboxylic acid (CF3(CF2)nCOOH); perfluorooctanoic acid (PFOA: perfluorooctanoate); and fluorinated telomeric alcohol (F(CF2)nCH2CH2OH). For example, the polymer 121 and the electrolyte 122 may be mixed at the predetermined mixing ratio described above. In some example embodiments, the content of the amphiphilic substance in the mixture may be about 1000 ppm or less. In some alternative example embodiments, the content of the amphiphilic substance in the mixture may be about 10 ppm or less. One reason is that this prevents excessive inclusion of the amphiphilic substance in the mixture, and allows a later-described function of the amphiphilic substance to be more effectively exhibited.
[ 00 2 3 ] In some example embodiments, upon mixing the polymer 121, the electrolyte 122, and the amphiphilic substance, these materials may be stirred in advance using ultrasonic waves. One reason is that this makes it easier to mix the materials, including the polymer 121 and the electrolyte 122, uniformly. For example, the ultrasonic waves may be at a frequency of about 50 kHz and has an energy of about 100 W. For example, the stirring using the ultrasonic waves may be performed for a predetermined period of time or a predetermined stirring time, which is not less than a lower limit time and not more than an upper limit time. One reason is that this secures durability of the ionic element 1 while increasing a stirring efficiency. In some example embodiments, the upper limit time and the lower limit time may respectively be 3 minutes and 10 minutes. In other words, in some example embodiments, the stirring using the ultrasonic waves may be performed for a period of 3 minutes or more and 10 minutes or less. Note that the upper limit value and the lower limit value (i.e., the appropriate stirring time) vary depending on a factor such as a kind of the polymer 121, a kind of the electrolyte 122, or an output value of the ultrasonic waves. Accordingly, in an example embodiment where the stirring is performed using the ultrasonic waves, the stirring may be performed with an output and the stirring time that allow for a high stirring efficiency and that do not break the ionic element 1.
[ 00 2 4 ] In the example embodiment described above, both of the mixing of the amphiphilic substance and the stirring using the ultrasonic waves are performed as described above, but this is not limitative. Some example embodiments may not perform the mixing of the amphiphilic substance or the stirring using the ultrasonic waves.
[ 00 2 5 ] Thereafter, the mixture may be formed into a thin film using a method such as spin coating or an ink-jet method. In other words, the mixture obtained as described above is made into a thin film. In an example embodiment where the spin coating is used, the spin coating may be performed for about one minute at a rotation rate of about 500 rpm in air. Note that a technique of forming the mixture into the thin film is not limited to the above-described spin coating and the ink-jet method, and any other printing technique may be used. Some example embodiments may use a printing technique or an etching technique, such as a nanoimprint method, an inductive plasma etching method, or a dry etching method. Some alternative example embodiments may not use a technique of forming the mixture into the thin film.
[0026] Thereafter, the thus-obtained thin-film mixture may be dried to evaporate the above-described solvent from the mixture. As a result, the ion layer 10 illustrated in is formed. For example, the drying may be performed in a nitrogen (N2) atmosphere.
[B. Attachment of Electrodes]
[0027] Thereafter, referring by way of example to , attachment of the electrodes 111 and 112 is performed (step S12). The electrodes 111 and 112 are attached to the pair of end faces (the front face and the back face) of the thus-obtained ion layer 10. For example, the ion layer 10 may be interposed between the pair of electrodes 111 and 112 that are separately formed by a method such as a vacuum evaporation method or a coating method. In an example embodiment where the polymer 121 includes the material exhibiting the adhesiveness as described above, the electrodes 111 and 112 may be adhered to the respective end faces of the ion layer 10. One reason is that this allows for easier attachment of the electrodes 111 and 112.
[ 00 28 ] The electrodes 111 and 112 each serve to apply a voltage (a DC voltage Vdc to be described later) to the ion layer 10. For example, the electrodes 111 and 112 each may have a thickness of 30 nm. For example, the electrodes 111 and 112 each may include any of various metals such as gold (Au), platinum (Pt), aluminum (Al), nickel (Ni), or titanium (Ti). Alternatively, the electrodes 111 and 112 each may include an electrically-conductive oxide such as an indium tin oxide (ITO), or may include an electrically-conductive material such as conductive polymer, carbon nanotube, or graphite. It is to be noted that, unlike a typical element such as an organic EL (Electro-Luminescence) element, the ionic element 1 allows for selection of materials of the respective electrodes 111 and 112 without the necessity of considering differences in work function between the electrode 111 and the ion layer 10 and between the electrode 112 and the ion layer 10. Accordingly, it is possible to use various electrically-conductive materials for the electrodes 111 and 112.
[C. Application of Voltage using Electrodes]
[0029] Thereafter, referring by way of example to , application of the voltage is performed through the use of the electrodes 111 and 112. For example, the electrode 112 may be electrically coupled to a positive (+) side of a DC voltage supply source PS(dc), whereas the electrode 111 may be electrically coupled to a negative (−) side of the DC voltage supply source PS(dc). Then, the predetermined voltage (the DC voltage Vdc) may be applied from the DC voltage supply source PS(dc) through the electrodes 111 and 112 across the pair of end faces (the front face and the back face) of the ion layer 10 (step S13).
[0030] As a result, as illustrated by way of example in , the cations 122c and the anions 122a selectively migrate from the state in which the cations 122c and the anions 122a are dispersed in the ion layer 10, forming electrical double layers in the ion layer 10. In some example embodiments, as illustrated in , the cations 122c in the ion layer 10 may be aligned with a surface of the electrode 111 (e.g., a surface adjacent to the ion layer 10) at a predetermined interval, whereas the anions 122a in the ion layer 10 may be aligned with a surface of the electrode 112 at a predetermined interval. For example, the electrical double layer adjacent to the electrode 111 and the electrical double layer adjacent to the electrode 112 each may be formed to have a small distance (spacing) of about 1 nm relative to the cations 122c or the anions 122a. By applying the DC voltage Vdc across the pair of end faces of the ion layer 10 through the electrodes 111 and 112, the ions (the cations 122c and the anions 122a in the illustrated example embodiment) are arranged in the region that is adjacent to at least one of the end faces (both of the end faces in the illustrated example embodiment) in the ion layer 10. Note that "h" represents a hole and "e" represents an electron in . This definition applies similarly to the subsequent figures as well.
[D. Polymerization of Ions and Polymer]
[ 00 3 1 ] Thereafter, polymerization of the ions and the polymer 121 is performed in the ion layer 10 (step S14). In an example embodiment, the cations 122c and the anions 122a and the polymer 121 may be polymerized with each other. As a result, the ions (the cations 122c and the anions 122a in an example embodiment) are chemically arranged and chemically fixed in the ion layer 12 in the region that is adjacent to at least one of the pair of end faces of the ion layer 12. In an illustrated example embodiment, the ions are chemically arranged and chemically fixed in the ion layer 12 in the regions that are adjacent to the respective front face and back face of the ion layer 12. In other words, on the basis of the ion layer 10 in which the ions are dispersed, the ion layer 12 is thus formed in which the ions are chemically arranged and fixed in the region that is adjacent to any end face.
[ 00 3 2 ] The polymerization of the ions and the polymer 121 may be performed as follows. For example, mixing of a polymerization initiator in the ion layer 10 may be performed followed by application of light or supply of heat to thereby polymerize the ions and the polymer 121 with each other. Non-limiting examples of the application of light may include application of ultraviolet rays. Non-limiting examples of the supply of heat may include heating to about 100°C. Non-limiting examples of the polymerization initiator may include: an azo compound such as 2,2′-azobisbutyronitrile; a peroxide such as benzoyl peroxide; a benzenesulfonic acid ester; and an alkyl phosphonium salt. In some example embodiments, the application of light, the supply of heat, or feeding of the polymerization initiator may cause a part of multiple bonds (such as double bonds or triple bonds described above) between the ions to be broken, allowing the ions and the polymer 121 to be polymerized with each other. In other words, it is possible to maintain the electrical double layers described above.
[E. Removal of Electrodes]
[ 00 3 3 ] Thereafter, the electrodes 111 and 112 are removed from the pair of end faces (the front face and the back face) of the thus-obtained ion layer 12 (step S15). In an example embodiment where the electrodes 111 and 112 are attached to the ion layer 12 owing to the adhesiveness, the removal of the electrodes 111 and 112 is facilitated, making it possible to remove the electrodes 111 and 112 easily.
[0034] The above example processes may complete the ionic element 1 illustrated in .
[Configuration of Functional Device]
[ 00 3 5 ] With reference to FIGs. 5A and 5B, a description is given next of an example of a configuration of a functional device that includes the ionic element 1 described by way of example above. FIGs. 5A and 5B each schematically illustrate an example of a cross-sectional configuration (a Z-X cross-sectional configuration) of the functional device (functional device 2) that includes the ionic element 1.
[ 00 3 6 ] The functional device 2 includes a controlled layer provided on at least one of the end faces of the ion layer 12 of the ionic element 1. As will be described later in greater detail, in some example embodiments, a physical property of the controlled layer may be thus controlled by the chemical arrangement and fixation of the ions (the cations 122c and the anions 122a in an example embodiment) in the ionic element 1, i.e., in the ion layer 12.
[0037] In an example embodiment illustrated in , the functional device 2 may include a controlled layer 21 disposed on one of the end faces (e.g., the back face) of the ion layer 12 in such a manner as to be opposed to the chemical arrangement and fixation of the cations 122c in the ion layer 12. Note that the controlled layer is not disposed on the other of the end faces (e.g., the front face) of the ion layer 12 in the functional device 2 of the example embodiment illustrated in .
[0038] In an example embodiment illustrated in , the functional device 2 may include the controlled layers disposed on the both of the end faces of the ion layer 12. In other words, the functional device 2 may include the controlled layer 21 disposed on one of the end faces (e.g., the back face) of the ion layer 12 in such a manner as to be opposed to the chemical arrangement and fixation of the cations 122c in the ion layer 12. Further, the functional device 2 may include a controlled layer 22 disposed on the other of the end faces (e.g., the front face) of the ion layer 12 in such a manner as to be opposed to the chemical arrangement and fixation of the anions 122a in the ion layer 12.
[ 00 39 ] In an example embodiment where the polymer 121 includes the material exhibiting the adhesiveness, i.e., where the end faces of the ion layer 12 have the adhesiveness, the controlled layers 21 and 22 may be adhered to the respective end faces of the ion layer 12. This configuration makes it possible to dispose the controlled layers 21 and 22 onto the end faces of the ion layer 12 easily.
[ 00 4 0 ] For example, the controlled layers 21 and 22 each may be a functional layer that includes any of various materials, such as a semiconductor layer, an insulator layer, an electric conductor layer, or a thermoelectric conversion layer.
[Workings and Example Effects]
[ 00 4 1 ] With reference to FIGs. 6A and 6B, a description is given next of workings and example effects of the ionic element 1 and the functional device 2. FIGs. 6A and 6B each schematically illustrate a cross-sectional configuration (a Z-X cross-sectional configuration) of the ionic element 1 and the functional device 2 for describing workings of the ionic element 1 and the functional device 2 illustrated in FIGs. 5A and 5B.
[0042] In the functional device 2 according to an example embodiment illustrated in , the controlled layer 21 is so disposed on the back face of the ion layer 12 as to be opposed to the chemical arrangement and fixation of the cations 122c in the ion layer 12. Thus, as illustrated by way of example in , electrons "e" serving as carriers are arranged in a region, adjacent to an interface between the controlled layer 21 and the ion layer 12, of the controlled layer 21 in such a manner as to be opposed to the chemical arrangement and fixation of the cations 122c. In other words, an electrically-conductive region derived from the electrons "e", i.e., a region having a relatively high negative electric charge amount, is formed in the region, adjacent to the interface between the controlled layer 21 and the ion layer 12, of the controlled layer 21.
[ 00 4 3 ] As a result, it is possible to easily control a physical property of the region, adjacent to the interface between the controlled layer 21 and the ion layer 12, of the controlled layer 21 serving as a target to be controlled by the ionic element 1 or a target to which the ionic element 1 is to be attached. In some example embodiments, it is possible to easily control a physical property such as an electric charge amount, a carrier characteristic, or electric conductivity. In other words, in an example embodiment, the chemical arrangement and fixation of the cations 122c of the ionic element 1, or in the ion layer 12, controls the physical property of the region, adjacent to the interface between the controlled layer 21 and the ion layer 12, of the controlled layer 21.
[0044] In the functional device 2 according to an example embodiment illustrated in , the controlled layer 21 is so disposed on the back face of the ion layer 12 as to be opposed to the chemical arrangement and fixation of the cations 122c in the ion layer 12, as with the example embodiment illustrated in . As a result, it is possible to easily control the physical property of the region, adjacent to the interface between the controlled layer 21 and the ion layer 12, of the controlled layer 21, owing to workings similar to those of the example embodiment illustrated in .
[0045] Further, in the functional device 2 according to the example embodiment illustrated in , the controlled layer 22 is also so disposed on the front face of the ion layer 12 as to be opposed to the chemical arrangement and fixation of the anions 122a in the ion layer 12. Thus, as illustrated by way of example in , holes "h" serving as carriers are arranged in a region, adjacent to an interface between the controlled layer 22 and the ion layer 12, of the controlled layer 22 in such a manner as to be opposed to the chemical arrangement and fixation of the anions 122a. In other words, an electrically-conductive region derived from the holes "h", i.e., a region having a relatively high positive electric charge amount, is formed in the region, adjacent to the interface between the controlled layer 22 and the ion layer 12, of the controlled layer 22.
[ 00 4 6 ] As a result, it is also possible to easily control a physical property of the region, adjacent to the interface between the controlled layer 22 and the ion layer 12, of the controlled layer 22 serving as a target to be controlled by the ionic element 1 or a target to which the ionic element 1 is to be attached. In some example embodiments, it is possible to easily control a physical property such as an electric charge amount, a carrier characteristic, or electric conductivity. In other words, in an example embodiment, the chemical arrangement and fixation of the anions 122a of the ionic element 1, or in the ion layer 12, controls the physical property of the region, adjacent to the interface between the controlled layer 22 and the ion layer 12, of the controlled layer 22.
[ 00 47 ] Accordingly, the ionic element 1 functions as a so-called electret, making it possible to easily control the physical property of the regions, adjacent to the interfaces between the controlled layer 21 and the ion layer 12 and between the controlled layer 22 and the ion layer 12, of the respective controlled layers 21 and 22 each serving as a target to be controlled by the ionic element 1 or a target to which the ionic element 1 is to be attached. Note that, in an example embodiment where the controlled layers 21 and 22 each include a thermoelectric conversion material, non-limiting examples of the physical property of each of the controlled layers 21 and 22, or the physical property to be controlled by the ionic element 1, may also include a thermoelectric conversion property besides the physical property such as the electric charge amount, the carrier characteristic, or the electric conductivity described above.
[ 00 48 ] The ionic element 1 according to the foregoing example embodiment includes the ion layer 12. The ion layer 12 includes the polymer 121, the electrolyte 122, and the pair of end faces. The electrolyte includes the ions having the multiple bonding property. The ions are chemically arranged and chemically fixed in the ion layer 12 in the region that is adjacent to at least one of the pair of end faces. Thus, the ionic element 1 functions as a so-called electret, making it possible to control, easily or in a simplified fashion, the physical property of the regions, adjacent to the interfaces between the controlled layer 21 and the ion layer 12 and between the controlled layer 22 and the ion layer 12, of the respective controlled layers 21 and 22 each serving as a target to be controlled by the ionic element 1 or a target to which the ionic element 1 is to be attached. Hence, it is possible to increase functionality of the functional device 2 easily and to improve convenience of a user.
[ 00 49 ] In addition, the ionic element 1 and the functional device 2 allow for a control of the physical properties of the respective controlled layers 21 and 22 without involving any particular chemical reaction. For example, it is possible to control the physical property in a simplified fashion, simply by attaching the ionic element 1 to any member, such as the controlled layers 21 and 22.
[ 00 5 0 ] Further, the ionic element 1 and the functional device 2 eliminate the necessity of adopting a complicated process such as a vacuum process or an ion implantation process upon manufacturing the ionic element 1 and the functional device 2. The ionic element 1 and the functional device 2 also allow for fabrication in a room temperature environment. Hence, it is possible to manufacture the ionic element 1 and the functional device 2 in a relatively simple process at a low cost.
[2. Modification Examples]
[ 00 5 1 ] Hereinafter, a description is given of some Modification Examples of the foregoing example embodiment of the technology (Modification Examples 1 to 4). Note that the same or equivalent elements as those of the example embodiment described above are denoted with the same reference numerals, and will not be described in detail.
[Modification Example 1]
[ 00 5 2 ] FIGs. 7A and 7B each schematically illustrate an example of a cross-sectional configuration (a Z-X cross-sectional configuration) of an ionic element ( ionic elements 1A or 1B) according to Modification Example 1. Unlike the ionic element 1 according to the foregoing example embodiment in which both of the cations 122c and the anions 122a are chemically arranged and chemically fixed, the ionic elements 1A and 1B according to the present Modification Example each have a configuration in which only the cations 122c or the anions 122a are chemically arranged and chemically fixed as described below.
[0053] For example, the ionic element 1A according to an example embodiment illustrated in may include an ion layer 12A instead of the ion layer 12 described in the foregoing example embodiment. The ion layer 12A may have a configuration basically similar to the configuration of the ion layer 12, except that only the cations 122c are chemically arranged and chemically fixed unlike the ion layer 12. In an illustrated example embodiment, in the ion layer 12A, the cations 122c may be chemically arranged and chemically fixed in a region that is adjacent to one of end faces (e.g., a back face) of the ion layer 12A, whereas the anions 122a may be dispersed in the polymer 121, i.e., may not be chemically arranged and chemically fixed.
[0054] The ionic element 1B according to an example embodiment illustrated in may include an ion layer 12B instead of the ion layer 12. The ion layer 12B may have a configuration basically similar to the configuration of the ion layer 12, except that only the anions 122a are chemically arranged and chemically fixed unlike the ion layer 12. In an illustrated example embodiment, in the ion layer 12B, the anions 122a may be chemically arranged and chemically fixed in a region that is adjacent to the other of the end faces (e.g., a front face) of the ion layer 12B, whereas the cations 122c may be dispersed in the polymer 121, i.e., may not be chemically arranged and chemically fixed.
[ 00 5 5 ] FIGs. 8A and 8B each schematically illustrate an example of a cross-sectional configuration (a Z-X cross-sectional configuration) of the functional device ( functional devices 2A and 2B) according to the Modification Example 1. The functional devices 2A and 2B may respectively include the ionic elements 1A and 1B, and each may have the following example configuration and workings.
[0056] In the functional device 2A according to an example embodiment illustrated in , the controlled layer 21 may be so disposed on one of the end faces (e.g., the back face) of the ion layer 12A in the ionic element 1A as to be opposed to the chemical arrangement and fixation of the cations 122c in the ion layer 12A. In the functional device 2A, however, no controlled layer may be disposed on the other of the end faces (e.g., the front face) of the ion layer 12A.
[0057] Thus, in the thus-configured functional device 2A, as illustrated by way of example in , the electrons "e" serving as the carriers are arranged in a region, adjacent to an interface between the controlled layer 21 and the ion layer 12A, of the controlled layer 21 in such a manner as to be opposed to the chemical arrangement and fixation of the cations 122c. In other words, the electrically-conductive region derived from the electrons "e", i.e., the region having the relatively high negative electric charge amount, is formed in the region, adjacent to the interface between the controlled layer 21 and the ion layer 12A, of the controlled layer 21.
[ 00 58 ] As a result, it is possible to easily control the physical property (such as the electric charge amount, the carrier characteristic, or the electric conductivity) of the region, adjacent to the interface between the controlled layer 21 and the ion layer 12A, of the controlled layer 21 serving as a target to be controlled by the ionic element 1A or a target to which the ionic element 1A is to be attached. In other words, in the illustrated example, the chemical arrangement and fixation of the cations 122c of the ionic element 1A, or in the ion layer 12A, controls the physical property of the region, adjacent to the interface between the controlled layer 21 and the ion layer 12A, of the controlled layer 21.
[0059] In the functional device 2B according to an example embodiment illustrated in , the controlled layer 22 may be so disposed on the other of the end faces (e.g., the front face) of the ion layer 12B in the ionic element 1B as to be opposed to the chemical arrangement and fixation of the anions 122a in the ion layer 12B. In the functional device 2B, however, no controlled layer may be disposed on one of the end faces (e.g., the back face) of the ion layer 12B.
[0060] Thus, in the thus-configured functional device 2B, as illustrated by way of example in , the holes "h" serving as the carriers are arranged in a region, adjacent to an interface between the controlled layer 22 and the ion layer 12B, of the controlled layer 22 in such a manner as to be opposed to the chemical arrangement and fixation of the anions 122a. In other words, the electrically-conductive region derived from the holes "h", i.e., the region having the relatively high positive electric charge amount, is formed in the region, adjacent to the interface between the controlled layer 22 and the ion layer 12B, of the controlled layer 22.
[ 00 6 1 ] As a result, it is possible to easily control the physical property (such as the electric charge amount, the carrier characteristic, or the electric conductivity) of the region, adjacent to the interface between the controlled layer 22 and the ion layer 12B, of the controlled layer 22 serving as a target to be controlled by the ionic element 1B or a target to which the ionic element 1B is to be attached. In other words, in the illustrated example, the chemical arrangement and fixation of the anions 122a of the ionic element 1B, or in the ion layer 12B, controls the physical property of the region, adjacent to the interface between the controlled layer 22 and the ion layer 12B, of the controlled layer 22.
[ 00 6 2 ] According to the present Modification Example, the ions are chemically arranged and chemically fixed in the ion layer 12A or 12B only in the region that is adjacent to one of the pair of end faces. Thus, as with the foregoing example embodiment, the present Modification Example also makes it possible to control, easily or in a simplified fashion, the physical property of the region, adjacent to the interface between the controlled layer 21 and the ion layer 12A or between the controlled layer 22 and the ion layer 12B, of the controlled layer 21 or 22 serving as a target to be controlled by the ionic element 1A or 1B or a target to which the ionic element 1A or 1B is to be attached. Hence, as with the foregoing example embodiment, it is also possible for the present Modification Example to increase functionality of the functional device 2A or 2B easily and to improve convenience of a user.
[Modification Example 2]
[Configuration]
[0063] schematically illustrates an example of a cross-sectional configuration (a Z-X cross-sectional configuration) of a switching device (switching device 3) as an example of the functional device, according to Modification Example 2. Referring to , the switching device 3 according to the present Modification Example may use the functional device 2A that includes the ionic element 1A described above. The switching device 3 may include the ionic element 1A and a plurality of electrodes. The illustrated Modification Example includes two electrodes 231 and 232 as the plurality of electrodes, although the number of electrodes is not limited to two. The switching device 3 may function as a field-effect diode (FED) as will be described later in greater detail.
[ 00 6 4 ] The ionic element 1A includes the ion layer 12A and the controlled layer 21 as described above. For example, in the switching device 3, the controlled layer 21 may be the semiconductor layer 210. Further, in the ion layer 12A, the cations 122c may be chemically arranged and chemically fixed in a region that is adjacent to one of end faces (in the illustrated Modification Example, an end face adjacent to the controlled layer 21 and to the electrodes 231 and 232) of the ion layer 12A, whereas the anions 122a may be dispersed in the polymer 121, i.e., may not be chemically arranged and chemically fixed.
[ 00 6 5 ] The semiconductor layer 210 may include any of various semiconductor materials, and may function as the controlled layer 21 as described above. Non-limiting examples of the semiconductor material may include strontium titanate (SrTiO3), silicon (Si), gallium nitride (GaN), silicon carbide (SiC), and zinc oxide (ZnO).
[ 00 6 6 ] The electrodes 231 and 232 may be disposed away from each other, at a predetermined distance, between the semiconductor layer 210 (i.e., the controlled layer 21) and the ion layer 12A. For example, the predetermined distance may be in a range from about 5 nm to about 10 μm. The electrodes 231 and 232 may serve to apply a voltage (a voltage VSD to be described later) to the ion layer 12A. For example, the electrodes 231 and 232 may respectively serve as a source electrode and a drain electrode. The electrodes 231 and 232 each may include a material such as gold (Au), aluminum (Al), silver (Ag), copper (Cu), or carbon (C), for example.
[Operation, Workings, and Example Effects]
[ 00 67 ] With reference to FIGs. 10A to 12, a description is given next of an operation, workings, and example effects of the switching device 3.
[ 00 68 ] FIGs. 10A to 10C each schematically illustrate a cross-sectional configuration (a Z-X cross-sectional configuration) of the switching device 3 for describing an example of operation of the switching device 3. In an illustrated example, the electrode 231 serves as a source electrode (S), whereas the electrode 232 serve as a drain electrode (D), although configurations of the electrodes 231 and 232 are not limited to this illustrated example.
[0069] Referring first to an example illustrated in , the following operation occurs in the switching device 3 when the voltage VSD (VSD≥0 V) equal to or greater than 0 V (volts) is applied across the electrodes 231 and 232, i.e., applied to the ion layer 12A. As illustrated in , the anions 122a remain dispersed in the ion layer 12A as a whole. Accordingly, in the ion layer 12A, the cations 122c are chemically arranged and chemically fixed in a region that is adjacent to an interface between the semiconductor layer 210 and the ion layer 12A, with a part of the anions 122a being disposed in that region as well. Hence, the anions 122a surround the cations 122c and block electric charges of the cations 122c. In this case, formation of a channel does not occur in the region, adjacent to the interface between the semiconductor layer 210 and the ion layer 12A, within the semiconductor layer 210. In other words, the channel, as the electrically-conductive region derived from the electrons "e" (i.e., the region having the relatively high negative electric charge amount), is not formed between the electrodes 231 and 232. As a result, a current (a current ISD to be described later) does not flow across the electrodes 231 and 232, e.g., across the source and drain.
[0070] Under such circumstances, referring to an example illustrated in , the following operation occurs in the switching device 3 when the negative voltage VSD is applied across the electrodes 231 and 232. The negative voltage VSD may have an absolute value that is between the threshold voltage Vth and the voltage of 0 V (Vth<VSD<0 V). For example, the threshold voltage Vth may be −3 V. As illustrated in , the anions 122a are partially attracted to the electrode 232 (attracted toward the drain side) in the ion layer 12A, as denoted by an arrow P1 in . Accordingly, in the ion layer 12A, a region in which only the cations 122c are chemically arranged and chemically fixed (i.e., in which the anions 122a are not disposed) is partially formed at the electrode 231 (formed on the source side) in the region that is adjacent to the interface between the semiconductor layer 210 and the ion layer 12A. In this case, formation of a channel C partially occurs on the electrode 231 side in the region, adjacent to the interface between the semiconductor layer 210 and the ion layer 12A, within the semiconductor layer 210. In other words, the channel C, as the electrically-conductive region derived from the electrons "e", is partially formed between the electrodes 231 and 232. Such partial formation of the channel C (i.e., an intermediate state of the channel C, or a state in which electric charges are distributed in an inclined fashion), however, still does not allow the current ISD to flow across the electrodes 231 and 232.
[0071] Then, referring to an example illustrated in , the following operation occurs in the switching device 3 when the negative voltage VSD is applied across the electrodes 231 and 232. The negative voltage VSD may have an absolute value that is equal to or greater than the threshold voltage Vth (VSD≤Vth). As illustrated in , the anions 122a are entirely attracted to the electrode 232 in the ion layer 12A. Accordingly, in the ion layer 12A, the region in which only the cations 122c are chemically arranged and chemically fixed (i.e., in which the anions 122a are not disposed) is entirely formed across the electrodes 231 and 232 in the region that is adjacent to the interface between the semiconductor layer 210 and the ion layer 12A. In this case, the formation of the channel C as the electrically-conductive region derived from the electrons "e" occurs across the electrodes 231 and 232 as a whole in the region, adjacent to the interface between the semiconductor layer 210 and the ion layer 12A, within the semiconductor layer 210. As a result, the current ISD flows across the electrodes 231 and 232.
[ 00 7 2 ] Thus, the switching device 3 may control the formation of a current path, i.e., the channel C as a path of the current ISD, in the region between the electrodes 231 and 232 in the semiconductor layer 210, in accordance with the state of application of the voltage VSD across the two electrodes 231 and 232. In other words, the switching device 3 is achieved by two terminals, i.e., the two electrodes 231 and 232 and functions as the field-effect diode. For example, the switching device 3 may have a switching characteristic that is applicable to a switching operation at a frequency in a megahertz (MHz) band.
[0073] FIGs. 11A and 11B are schematic circuit diagrams each describing an operation of the switching device 3 illustrated in . Referring to FIGs. 11A and 11B, the switching device 3 may perform the switching operation as follows. As illustrated in an example of , first, the current ISD does not flow across the electrodes 231 and 232 as described above and the switching device 3 is turned off (is placed into a cut-off state), when a value of the voltage VSD across the electrodes 231 and 232 is equal to or greater than 0 V (VSD≥0 V) or is between the threshold voltage Vth and the voltage of 0 V (Vth<VSD<0 V). As illustrated in an example of , the current ISD flows across the electrodes 231 and 232 as described above and the switching device 3 is turned on (is placed into an electrically-conductive state) as denoted by an arrow P2 in , when the value of the voltage VSD across the electrodes 231 and 232 is equal to or greater than the threshold voltage Vth (VSD≤Vth), i.e., when the absolute value of the voltage VSD as the negative voltage becomes equal to or greater than the absolute value of the threshold voltage Vth.
[0074] illustrates an example of characteristics (VSD−ISD characteristics) of the switching device 3, and illustrates an example of actual measurement data. Note that gate voltages "Vg=0 V" and "Vg=3 V" denoted in each refer to the actual measurement data where a gate electrode is auxiliary provided to the switching device 3 and the gate voltage Vg is applied to the switching device 3, for convenience of confirming an operation upon an experiment. It is to be also noted that the case where the gate voltage Vg is equal to the 0 V (Vg=0 V) corresponds to the actual measurement data obtained by the intended switching device 3 illustrated in and FIGs. 10A to 10C that has the two terminals, i.e., the two electrodes 231 and 232.
[0075] As can be appreciated from , the current ISD did not flow when the value of the voltage VSD was equal to or greater than 0 V (VSD≥0 V) or was between the threshold voltage Vth and the voltage of 0 V (Vth<VSD<0 V), and the current ISD (a current of about several μA) flowed when the value of the voltage VSD was equal to or greater than the threshold voltage Vth (VSD≤Vth), as described above. It can also be appreciated from that the VSD−ISD characteristic showed a difference in value of the current ISD between an increase in the absolute value of the voltage VSD and a decrease in the absolute value of the voltage VSD (see an arrow of a broken line in ) and thus showed a hysteretic characteristic.
[ 00 7 6 ] According to the present Modification Example, the switching device 3 controls the formation of the current path, i.e., the channel C as the path of the current ISD, in the region between the electrodes 231 and 232 in the semiconductor layer 210, in accordance with the state of application of the voltage VSD across the two electrodes 231 and 232. In other words, the switching device 3 is achieved by the two terminals, i.e., the two electrodes 231 and 232 and functions as the field-effect diode. Thus, unlike an existing switching device having three terminals (i.e., three electrodes including a gate electrode, a source electrode, and a drain electrode), or unlike a switching device that utilizes a field-effect transistor (FET), it is possible to easily achieve the switching device having a simple configuration that allows for a reduction of one terminal. Hence, the present Modification Example makes it possible to further improve convenience of a user.
[ 00 77 ] It is also possible to manufacture the switching device 3 in a simple fashion. For example, the ion layer 12A may be attached to one surface of a semiconductor wafer (e.g., on the semiconductor layer 210 and the electrodes 231 and 232), following which the dicing may be performed for each device region to manufacture the switching device 3.
[0078] A description of the switching device 3 according to the present Modification Example has been given above that is based on the ionic element 1A in which the cations 122c are chemically arranged and fixed and the anions 122a are dispersed in the ion layer 12A. An embodiment of the technology, however, is not limited to this illustrated example. For example, the switching device 3 may be based on the ionic element 1B illustrated by way of example in in which the anions 122a are chemically arranged and fixed and the cations 122c are dispersed in the ion layer 12B. Unlike the switching device 3 described in the present Modification Example, the switching device 3 based on the ionic element 1B forms the channel as the electrically-conductive region derived from the holes "h" to allow the current to flow across the two terminals.
[Modification Example 3]
[ 00 79 ] FIGs. 13A to 13C each schematically illustrate an example of a plan configuration (an X-Y plan configuration) of an ionic element according to Modification Example 3. The ionic element according to the present Modification Example is similar to the ionic element 1, 1A, or 1B described above, but differs from the ionic element 1, 1A, or 1B in that the region in which the ions are chemically arranged and fixed is formed partially within an end face. In other words, the ionic element according to the present Modification Example includes a fixed-arrangement region in which the ions are chemically arranged and chemically fixed in an end face, and a non-fixed-arrangement region in which the ions are dispersed in the end face.
[0080] For example, the ionic element 1, 1A, or 1B according to an example illustrated in may include a fixed-arrangement region 41 and a non-fixed-arrangement region 42 along a Y-axis direction in an end face. The fixed-arrangement region 41 may be a region in which the ions, e.g., the cations 122c, the anions 122a, or both, are chemically arranged and chemically fixed. The non-fixed-arrangement region 42 may be a region in which the ions are dispersed. Note that, with this configuration, the above-described DC voltage Vdc directed to the formation of the chemical arrangement and fixation of the ions may be applied selectively to the fixed-arrangement region 41. This applies similarly to the following description as well.
[0081] The ionic element 1, 1A, or 1B according to an example illustrated in may include the fixed-arrangement region 41 and the non-fixed-arrangement region 42 along each of an X-axis direction and the Y-axis direction in an end face. illustrates a non-limiting example in which the fixed-arrangement regions 41 are disposed two-dimensionally in matrix within the end face.
[0082] The ionic element 1, 1A, or 1B according to an example illustrated in may include the fixed-arrangement region 41 that has a pattern having a predetermined circuit shape in an end face. illustrates a non-limiting example in which the fixed-arrangement regions 41 form a circuit shape in which the two rectangular fixed-arrangement regions 41 are electrically connected in parallel by the wiring-line-shaped fixed-arrangement regions 41.
[ 00 8 3 ] The ionic element according to the present Modification Example thus allows for setting of the fixed-arrangement region 41 to any location in an end face, i.e., allows for setting of the fixed-arrangement region 41 on an as-necessary basis, through controlling a region in which the DC voltage Vdc is to be applied in an end face. Thus, according to the present Modification Example, it is possible to set, in a simple fashion and on an as-necessary basis, a region in which the ionic element functions as the above-described electret simply by the selective and regional application of the DC voltage Vdc. Hence, the present Modification Example makes it possible to further improve convenience of a user. Note that a factor related to the fixed-arrangement region 41, such as a shape, arrangement, a size, the number, or a circuit pattern of the fixed-arrangement region 41, is not limited to that described in any of the foregoing examples. Any factor of the fixed-arrangement region 41 may be set on an as-necessary basis.
[Modification Example 4]
[0084] illustrates an example of a configuration of an ionic element according to Modification Example 4. The ionic element according to the present Modification Example may have a configuration in which an amount of electric charges of the ions, e.g., the cations 122c, the anions 122a, or both, is made variable in the fixed-arrangement region 41, and the amount of electric charges is settable to any amount of electric charges, i.e., settable on an as-necessary basis. The fixed-arrangement region 41 may be entirely or partially formed on an end face.
[0085] Referring by way of example to , a magnitude of the DC voltage Vdc directed to the formation of the chemical arrangement and fixation of the ions may be controlled to set, on an as-necessary basis, the amount of electric charges in the fixed-arrangement region 41. illustrates a non-limiting example in which the amount of electric charges of the ions in the fixed-arrangement region 41 increases with an increase in the value of the DC voltage Vdc. For example, when the magnitude of the DC voltage Vdc is relatively small, the amount of electric charges of the ions in the fixed-arrangement region 41 may become relatively small as well. When the magnitude of the DC voltage Vdc is relatively large, the amount of electric charges of the ions in the fixed-arrangement region 41 may become relatively large as well.
[ 00 8 6 ] The ionic element according to the present Modification Example thus allows for setting of the amount of electric charges of the ions in the fixed-arrangement region 41 to any amount of electric charges, i.e., allows for setting of the amount of electric charges of the ions in the fixed-arrangement region 41 on an as-necessary basis, through controlling the magnitude of the DC voltage Vdc. Thus, according to the present Modification Example, it is possible to set, in a simple fashion and on an as-necessary basis, the amount of electric charges required for the ionic element to function as the above-described electret, i.e., a degree of controlling a physical property of the controlled layer serving as a target to be controlled, simply by adjusting the magnitude of the DC voltage Vdc. Hence, the present Modification Example makes it possible to further improve convenience of a user.
[3. Application Examples]
[ 00 87 ] A description is given next of some examples of application, to an electronic apparatus, of the ionic element (e.g., the ionic element 1, 1A, or 1B) according to any of the foregoing example embodiments and Modification Examples (e.g., the Modification Examples 1 to 4).
[ 00 88 ] FIGs. 15A and 15B each illustrate an example of a block configuration of an electronic apparatus (electronic apparatus 5) according to Application Example.
[0089] The electronic apparatus 5 according to an example illustrated in may include one functional device 2 (one functional device 2A or 2B or one switching device 3) that has one or a plurality of ionic elements 1, 1A, or 1B. The electronic apparatus 5 may also include a package 50 (i.e., a sealing member) that seals components, including the functional device 2, from the outside. Providing the package 50 prevents intrusion of an external substance, such as moisture, from the outside into the components including the functional device 2, making it possible to improve durability of the components including the functional device 2. The durability of the components may be, in other words, a device life or reliability.
[0090] The electronic apparatus 5 according to an example illustrated in may include a plurality of functional devices 2 (a plurality of functional devices 2A or 2B or a plurality of switching devices 3) each having one or a plurality of ionic elements 1, 1A, or 1B. illustrates a non-limiting example in which two functional devices 2 are provided, although the number of functional devices 2 is not limited to two. The electronic apparatus 5 may also include the package 50 that seals components, including the functional device 2, from the outside.
[ 00 9 1 ] Non-limiting examples of the electronic apparatus 5 may include: various circuits (such as a resistor circuit or an amplifier circuit) that use one or the plurality of functional devices 2 described above; and various apparatuses having such various circuits.
[4. Other Modification Examples]
[ 00 9 2 ] Some example embodiments, Modification Examples, and Application Examples of the technology have been described above; however, embodiments of the technology are not limited to the foregoing example embodiments, Modification Examples, and Application Examples, and are modifiable in various ways.
[ 00 9 3 ] For example, the configuration (such as a shape, an arrangement position, the number, or a material) of each of the members described in the foregoing example embodiments, Modification Examples, and Application Examples is non-limiting. In some alternative example embodiments of the technology, other configurations (such as other shapes, other arrangement positions, other numbers, or other materials) may be used. For example, the pair of end faces in the ion layer are opposed to each other in the foregoing example embodiments, Modification Examples, and Application Examples, although this is non-limiting. In some alternative example embodiments, the pair of end faces in the ion layer may not be opposed to each other, or may be disposed on the same plane.
[ 00 9 4 ] The method of manufacturing the ionic element described in the foregoing example embodiments, Modification Examples, and Application Examples is non-limiting. Any other method may be used to manufacture the ionic element according to any embodiment of the technology.
[ 00 9 5 ] The technology encompasses any possible combination of some or all of the various example embodiments, the Modification Examples, and the Application Examples described herein and incorporated herein.
[ 00 9 6 ] The example effects described herein are merely illustrative and non-limiting. Any embodiment of the technology may have effects other than those described above.
[ 0 097 ] It is possible to achieve at least the following configurations from the above-described example embodiments, the Modification Examples, and the Application Examples of the technology.
Anionic element including
an ion layer including a polymer, an electrolyte, and a pair of end faces, the polymer being a base material, the electrolyte including ions having a multiple bonding property,
the ions being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces.
Theionic element according to (1), in which
the ions include cations and anions,
the cations are chemically arranged and chemically fixed in the ion layer in the region that is adjacent to one of the pair of end faces, and
the anions are chemically arranged and chemically fixed in the ion layer in the region that is adjacent to the other of the pair of end faces.
(3) The ionic element according to (1), in which
the ions include cations and anions,
one of the cations and the anions is chemically arranged and chemically fixed in the ion layer in the region that is adjacent to one of the pair of end faces, and
the other of the cations and the anions is dispersed in the ion layer.
The ionic element according to any one of (1) to (3), in which the pair of end faces include:
a fixed-arrangement region in which the ions are chemically arranged and chemically fixed; and
a non-fixed-arrangement region in which the ions are dispersed.
The ionic element according to (4), in which the fixed-arrangement region in the pair of end faces has a pattern having a predetermined circuit shape.
The ionic element according to any one of (1) to (5), in which the pair of end faces include a fixed-arrangement region in which the ions are chemically arranged and chemically fixed and in which an amount of electric charges is settable to any amount of electric charges.
The ionic element according to any one of (1) to (6), in which the ions and the polymer are polymerized with each other to allow the ions to be chemically arranged and chemically fixed.
The ionic element according to any one of (1) to (7), in which the at least one of the pair of end faces in the ion layer has adhesiveness.
The ionic element according to any one of (1) to (8), in which the electrolyte includes an ionic liquid.
A functional deviceincluding:
an ion layer including a polymer, an electrolyte, and a pair of end faces, the polymer being a base material, the electrolyte including ions having a multiple bonding property; and
a controlled layer provided on at least one of the pair of end faces and controlled by the ion layer,
the ions being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to the at least one of the pair of end faces.
(11) The functional device according to (10), in which the chemical arrangement and the chemical fixation of the ions in the ion layer control a physical property of the controlled layer.
(12) The functional device according to (10) or (11), further including a plurality of electrodes configured to apply a voltage to the ion layer, in which
the controlled layer includes a semiconductor layer,
the plurality of electrodes is provided between the semiconductor layer and the ion layer,
the ions include cations and anions, and
only the cations or the anions are chemically arranged and chemically fixed in the region that is adjacent to the one of the pair of end faces.
(13) The functional device according to (12), in which the functional device includes a switching device configured to control, in accordance with a state of application of the voltage, formation of a current path in a region between the plurality of electrodes in the semiconductor layer.
(14) The functional device according to (12) or (13), in which the functional device includes a field-effect diode that includes two electrodes as the plurality of electrodes.
(15) The functional device according to any one of (10) to (14), in which the controlled layer is attached to the at least one of the pair of end faces.
(16) An electronic apparatus with one or a plurality of functional devices, the one or the plurality of functional devices each including:
an ion layer including a polymer, an electrolyte, and a pair of end faces, the polymer being a base material, the electrolyte including ions having a multiple bonding property; and
a controlled layer provided on at least one of the pair of end faces and controlled by the ion layer,
the ions being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to the at least one of the pair of end faces.
(17) An ionic element manufacturing method including:
forming an ion layer that includes a polymer, an electrolyte, and a pair of end faces, the polymer being a base material, the electrolyte including ions having a multiple bonding property;
attaching electrodes to the respective end faces;
arranging the ions in the ion layer in a region that is adjacent to at least one of the pair of end faces, through applying, with the electrodes, a voltage across the pair of end faces;
causing the ions to be chemically arranged and chemically fixed in the region that is adjacent to the at least one of the pair of end faces, through polymerizing the ions and the polymer with each other; and
removing the electrodes from the respective end faces.
(18) The ionic element manufacturing method according to (17), in which the polymerizing the ions and the polymer includes applying light to the ion layer, supplying heat to the ion layer, or feeding a polymerization initiator to the ion layer.
(19) The ionic element manufacturing method according to (17) or (18), further including setting a fixed-arrangement region to any location in the pair of end faces, through controlling a region in which the voltage is to be applied in the pair of end faces,
the fixed-arrangement region being a region in which the ions are chemically arranged and chemically fixed.
The ionic element manufacturing method according to any one of (17) to (19), further including setting an amount of electric charges in a fixed-arrangement region to any amount of electric charges, through controlling a magnitude of the voltage,
the fixed-arrangement region being a region in which the ions are chemically arranged and chemically fixed.
[00 98 ] The ionic element, the method of manufacturing the same, the functional device, and the electronic apparatus according to one embodiment of the technology each therefore make it possible to improve convenience.
[00 99 ] Although the technology has been described in terms of exemplary embodiments, it is not limited thereto. It should be appreciated that variations may be made in the described embodiments by persons skilled in the art without departing from the scope of the technology as defined by the following claims. The limitations in the claims are to be interpreted broadly based on the language employed in the claims and not limited to examples described in this specification or during the prosecution of the application, and the examples are to be construed as non-exclusive. For example, in this disclosure, the term "preferably", "preferred" or the like is non-exclusive and means "preferably", but not limited to. The use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another. The term "substantially" and its variations are defined as being largely but not necessarily wholly what is specified as understood by one of ordinary skill in the art. The term "about" or "approximately" as used herein can allow for a degree of variability in a value or range. Moreover, no element or component in this disclosure is intended to be dedicated to the public regardless of whether the element or component is explicitly recited in the following claims.

Claims (18)

  1. An ionic element comprising
    an ion layer including a polymer, an electrolyte, and a pair of end faces, the electrolyte including ions, the ions being cations and anions,
    at least a part of the cations and/or at least a part of the anions having a multiple bonding property and being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces.
  2. The ionic element according to claim 1, wherein
    both the cations and the anions have multiple bonding property and ,
    the cations are chemically arranged and chemically fixed in the ion layer in the region that is adjacent to one of the pair of end faces, and
    the anions are chemically arranged and chemically fixed in the ion layer in the region that is adjacent to the other of the pair of end faces.
  3. The ionic element according to claim 1, wherein
    only one of the cations and the anions has multiple bonding property, and
    those of the cations and the anions having multiple bonding property being chemically arranged and chemically fixed in the ion layer in the region that is adjacent to one of the pair of end faces, and
    the other of the cations and the anions not having multiple bonding property being dispersed in the ion layer.
  4. The ionic element according to any one of claims 1 to 3, wherein the pair of end faces include:
    a region in which the ions having multiple bonding property are chemically arranged and chemically fixed; and
    a region in which the ions not having multiple bonding property are dispersed.
  5. The ionic element according to claim 4, wherein the fixed-arrangement region in the pair of end faces has a pattern having a predetermined circuit shape.
  6. The ionic element according to any one of claims 1 to 5, wherein the pair of end faces include a region in which the ions having multiple bonding property are chemically arranged and chemically fixed and in which an amount of electric charges is settable.
  7. The ionic element according to any one of claims 1 to 6, wherein the ions and the polymer are polymerized with each other to allow the ions having multiple bonding property to be chemically arranged and chemically fixed.
  8. The ionic element according to any one of claims 1 to 7, wherein the at least one of the pair of end faces in the ion layer has adhesiveness.
  9. The ionic element according to any one of claims 1 to 8, wherein the electrolyte comprises an ionic liquid.
  10. A semiconductor device comprising:
    an ion layer including a polymer, an electrolyte, and a pair of end faces, the electrolyte including ions, the ions being cations and anions; and
    a controlled semiconductor layer provided on at least one of the pair of end faces and controlled by the ion layer,
    at least a part of the cations and/or at least a part of the anions having a multiple bonding property and being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces,
    the chemical arrangement and the chemical fixation of the cations and/or the anions in the ion layer controlling a physical property, such as an electric charge amount, a carrier characteristic, or electric conductivity, and/or a thermoelectric conversion property of the controlled semiconductor layer.
  11. The semiconductor device according to claim 10, further comprising a plurality of electrodes configured to apply a voltage to the ion layer, wherein
    the plurality of electrodes is provided between the controlled semiconductor layer and the ion layer,
    and
    only the cations or the anions are chemically arranged and chemically fixed in the region that is adjacent to the one of the pair of end faces.
  12. The semiconductor device according to claim 10, wherein the semiconductor device comprises a switching device configured to control, in accordance with a state of application of the voltage, formation of a current path in a region between the plurality of electrodes in the controlled semiconductor layer.
  13. The semiconductor device according to claim 11 or 12, wherein the semiconductor device comprises a field-effect diode that includes two electrodes as the plurality of electrodes.
  14. The semiconductor device according to any one of claims 10 to 13, wherein the semiconductor controlled layer is attached to the at least one of the pair of end faces.
  15. A semiconductor apparatus with one or a plurality of semiconductor devices, the one or the plurality of semiconductor devices each comprising:
    an ion layer including a polymer, an electrolyte, and a pair of end faces, the electrolyte including ions, the ions being cations and anions, at least a part of the cations and/or at least a part of the anions having a multiple bonding property and being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces; and
    a controlled semiconductor layer provided on at least one of the pair of end faces and controlled by the ion layer,
    at least a part of the cations and/or at least a part of the anions having a multiple bonding property and being chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces.
  16. An ionic element manufacturing method comprising:
    forming an ion layer that includes a polymer, an electrolyte, and a pair of end faces, the electrolyte including ions, the ions being cations and anions, at least a part of the cations and/or at least a part of the anions having a multiple bonding property;
    attaching electrodes to the respective end faces;
    arranging the ions in the ion layer in a region that is adjacent to at least one of the pair of end faces, through applying, with the electrodes, a voltage across the pair of end faces; the voltage being below the chemical window of ionic liquids, or preferably below 4 V;
    causing the ions to be chemically arranged and chemically fixed in the region that is adjacent to the at least one of the pair of end faces, through polymerizing the ions having multiple bonding property and the polymer with each other, the polymerizing of the ions having multiple bonding property and the polymer comprises applying light to the ion layer, supplying heat to the ion layer, or feeding a polymerization initiator to the ion layer; and
    removing the electrodes from the respective end faces.
  17. The ionic element manufacturing method according to claim 16, further comprising setting a region in which the ions having multiple bonding property are chemically arranged and chemically fixed to a location in the pair of end faces, through controlling a region in which the voltage is to be applied in the pair of end faces.
  18. The ionic element manufacturing method according to any one of claims 16 and 17, further comprising setting an amount of electric charges in a region in which the ions having multiple bonding property are chemically arranged and chemically fixed to an amount of electric charges, through controlling a magnitude of the voltage.
PCT/IB2021/050709 2020-01-31 2021-01-29 Ionic element, method of manufacturing the same and semiconductor device WO2021152525A1 (en)

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FR2000997A FR3106938B1 (en) 2020-01-31 2020-01-31 IONIC ELEMENT, METHOD OF MANUFACTURING IT, FUNCTIONAL DEVICE AND ELECTRONIC APPARATUS EACH HAVING THE IONIC ELEMENT
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