WO2021129458A1 - 智能功率模块及驱动控制方法 - Google Patents
智能功率模块及驱动控制方法 Download PDFInfo
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- WO2021129458A1 WO2021129458A1 PCT/CN2020/136429 CN2020136429W WO2021129458A1 WO 2021129458 A1 WO2021129458 A1 WO 2021129458A1 CN 2020136429 W CN2020136429 W CN 2020136429W WO 2021129458 A1 WO2021129458 A1 WO 2021129458A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
Definitions
- the present invention relates to the technical field of intelligent power modules, in particular to an intelligent power module and a drive control method.
- Intelligent Power Module is a power drive product that integrates high voltage integrated drive chip (HVIC, High Voltage Integrated Circuit) and power switching devices.
- HVIC High Voltage Integrated Circuit
- the intelligent power module is used for power When driving, it is necessary to adjust the trade-off relationship between turn-on loss and current overshoot.
- a gate resistor is connected in series with the gate of the power switch, and the gate resistance is changed to adjust the trade-off relationship between turn-on loss and current overshoot.
- the trade-off relationship cannot be achieved at different stages of the power switch turn-on process. Automatic optimization.
- the purpose of the present invention is to propose an intelligent power module and a drive control method in view of the above-mentioned shortcomings of the prior art, and the purpose is achieved by the following technical solutions.
- the first aspect of the present invention provides an intelligent power module, the intelligent power module includes a high-voltage integrated drive chip and a power switch; the high-voltage integrated drive chip includes a drive current adjustment module, a detection module and a control signal input terminal;
- the control signal input terminal is connected with the input terminal of the detection module
- the output terminal of the detection module is connected to the input terminal of the drive current adjustment module
- the output terminal of the drive current adjustment module is connected to the gate of the power switch.
- the second aspect of the present invention proposes a drive control method, which is applied to the smart power module as described in the above first aspect, and the method includes:
- the detection module obtains the gate voltage and the drain or collector voltage change rate of the power switch, and obtains the determination result of the gate voltage and the voltage change rate;
- the detection module transmits the determination result to the drive current adjustment module
- the driving current adjustment module adjusts the driving current provided to the power switch according to the determination result.
- the drive current adjustment module and the detection module of the power switch are integrated in the high-voltage integrated drive chip of the intelligent power module to realize the drive current adjustment during the turn-on process of the power switch, thereby achieving the relationship between turn-on loss and current overshoot Automatic optimization purpose. Since it is a drive current adjustment module and a detection module integrated in a high-voltage integrated drive chip, the integration level is also relatively high. In addition, even if the turn-on and turn-off performance of the power switch changes due to long-term use, since the drive current adjustment module provides drive current based on the detection result of the detection module, this solution can still make the power switch turn-on loss and current overshoot In the best compromise relationship.
- Figure 1 is a schematic diagram of the gate drive control structure of an intelligent power module in related technologies
- Fig. 2 is a schematic diagram showing the structure of a smart power module according to an exemplary embodiment of the present invention
- Fig. 3 is a schematic diagram of a driving curve of a power switch
- Fig. 4 is a flowchart of an embodiment of a driving control method according to an exemplary embodiment of the present invention.
- first, second, third, etc. may be used in the present invention to describe various information, the information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other.
- first information may also be referred to as second information, and similarly, the second information may also be referred to as first information.
- word “if” as used herein can be interpreted as "when” or “when” or "in response to determination”.
- the gate of each power switch in the smart power module is connected in series with a gate resistor Rg.
- the R&D personnel can test the turn-on loss and current of the power switch by changing the resistance Rg.
- the overshoot relationship finally select a resistance value with the smallest turn-on loss but no current overshoot problem, and use this resistance value as the gate resistance to mass-produce smart power modules.
- the gate resistance is encapsulated in the smart power module, so the gate resistance cannot be changed during the use of the smart power module, so the trade-off relationship between turn-on loss and current overshoot cannot be automatically optimized.
- the gate resistance used at the factory can no longer make the turn-on loss of the power switch and the current overshoot in an optimal compromise relationship.
- the inventor found that the on and off of the power switch is determined by the driving current of the gate, and the driving current of the gate is changed by adjusting the gate resistance. Therefore, it is integrated in the high-voltage integrated driving chip of the intelligent power module.
- the drive current adjustment module and the detection module of the power switch adjust the drive current provided to the power switch according to the different stages of the detected power switch opening process, so as to achieve the goal of automatically optimizing the relationship between the turn-on loss and the current overshoot.
- the smart power module includes a high-voltage integrated drive chip 200, a power switch 101, and the high-voltage integrated drive chip 200 includes a drive current adjustment module 210, a detection module 220, and a control signal input terminal HIN/LIN.
- control signal input terminal HIN/LIN is connected with the input terminal of the detection module 220
- the output terminal of the detection module 220 is connected with the input terminal of the drive current regulation module 210
- the output terminal of the drive current regulation module is connected with the gate of the power switch 101 .
- the smart power module shown in FIG. 2 includes a power switch 101 for example only.
- the smart function module usually includes multiple power switches.
- each power switch 101 The switch corresponds to a drive current adjustment module, a detection module and a control signal input terminal.
- HIN refers to the upper bridge input, that is, the corresponding power switch belongs to the upper bridge
- LIN refers to the lower bridge input, that is, the corresponding power switch belongs to the lower bridge.
- the power switch may be a MOS tube or a transistor (IGBT, Insulated Gate Bipolar Transistor), which is not limited in the present invention.
- IGBT Insulated Gate Bipolar Transistor
- t1, t2, t3, t4, and t5 is the turn-on process of the power switch.
- the collector voltage Vce remains unchanged.
- the switch starts to turn on Vce begins to gradually decrease, until it drops to 0, the power switch is successfully turned on, and the gate voltage Vge first gradually rises to a certain value and suddenly begins to gradually decrease, and when it drops to Vp, it remains unchanged for a period of time and then gradually Rise to Vcc.
- the collector current Ic will reach a peak current. If the turn-on time is shortened by increasing the drive current and the turn-on loss is reduced, the Ic will be very high and it is easy to burn out the switch, and if the drive current is reduced, Longer turn-on time, lower Ic, and higher turn-on loss.
- the gate voltage will rise from an initial value to the power supply voltage Vcc, and the collector voltage will always be in a decreasing state. Therefore, the comparison result of the gate voltage and the voltage threshold is combined and combined
- the comparison result of the collector voltage change rate and the rate threshold can reflect the different stages of the power switch's turn-on process. By providing different drive currents at different stages, it can prevent the peak current from being too high and shorten the turn-on time of the switch to achieve turn-on. The purpose of optimizing the relationship between loss and current overshoot.
- the different stages of the power switch's turn-on process can be determined by the gate voltage and drain voltage change rate obtained by the detection module; when the power switch is a transistor, The different stages in the power switch turn-on process can be determined by the gate voltage and collector voltage change rate obtained by the detection module.
- the detection module 220 continuously obtains the gate voltage and the drain or collector voltage change rate of the power switch 101, and obtains the determination result of the gate voltage and the voltage change rate.
- the control signal input terminal HIN/LIN receives the power for turning on
- the detection module transmits the determination result to the driving current adjustment module 210, so that the driving current adjustment module 210 can adjust the driving current provided to the power switch 101 according to the determination result transmitted each time.
- the detection module 220 stops transmitting the determination result to the drive current adjustment module 210.
- the drive current adjustment module and the detection module of the power switch in the high-voltage integrated drive chip of the smart power module, the drive current adjustment during the turn-on process of the power switch is realized, and the relationship between turn-on loss and current overshoot is achieved automatically. Optimization purpose. Since it is a drive current adjustment module and a detection module integrated in a high-voltage integrated drive chip, the integration level is also relatively high. In addition, even if the turn-on and turn-off performance of the power switch changes due to long-term use, since the drive current adjustment module provides drive current based on the detection result of the detection module, this solution can still make the power switch turn-on loss and current overshoot In the best compromise relationship.
- the high-voltage integrated driver chip 200 further includes a transistor 240.
- the gate of the transistor 240 is connected to the control signal input terminal HIN/LIN, and the drain of the transistor 240 is connected to the gate of the power switch 101. .
- the transistor is used to transmit the control signal for turning off the power switch to the power switch. That is, when the control signal input terminal HIN/LIN receives the control signal for turning on the power switch, the transistor 240 is turned off, and when the control signal input terminal HIN/LIN receives the control signal for turning off the power switch, the transistor 240 is turned on. Turn on, and then trigger the power switch to start discharging.
- the transistor 240 may be an NMOS transistor.
- the high-voltage integrated drive chip 200 may also include a signal processing module 230 connected to the control signal input terminal HIN/LIN, for filtering, shaping and other processing of the control signal.
- the detection module 220 includes a first detection circuit 221, a second detection circuit 222, and a result determination circuit 223; the first terminal of the first detection circuit 221 and the gate of the power switch 101 Connected, the first end of the second detection circuit 222 is connected to the drain or collector of the power switch 101, and the second end of the first detection circuit 221 and the second end of the second detection circuit 222 are connected to the result determination circuit 223 .
- the first detection circuit 221 is used to detect the gate voltage Vge of the power switch 101
- the second detection circuit 222 is used to detect the voltage change rate dVce/dt of the drain or collector of the power switch 101
- the result determination circuit 223 is used to The gate voltage is compared with the first voltage threshold, the second voltage threshold, and the power supply voltage of the smart power module, and the voltage change rate is compared with the rate threshold to obtain a determination result.
- the first voltage threshold and the second voltage threshold are both smaller than the power supply voltage.
- the driving current adjustment module 210 includes a first current circuit 211, a second current circuit 212, and a current selection circuit 213; the output terminal of the first current circuit 211 and the first current circuit 211 The output terminals of the two current circuits 212 are both connected to the current selection circuit 213.
- the first current output by the first current circuit 211 is smaller than the second current output by the second current circuit 212.
- the current selection circuit 213 is configured to select the first current and/or the second current according to the determination result sent by the detection module 220, or output as 0.
- the current selection circuit 213 may be an analog switch, which can be implemented by a transmission gate device or a switch control circuit.
- the drive current adjustment module 210 is used to provide different drive currents according to different determination results. In order to enable the drive current adjustment module 210 to output different drive currents, the drive current adjustment module 210 needs to be at least Two current circuits are included for the current selection circuit 213 to select different drive currents to output.
- the high-voltage integrated driver chip may further include a voltage input terminal Vdg, which is connected to the input terminal of the first current circuit 211 and the second current circuit 212, respectively. Input terminal connection.
- the voltage input terminal Vdg is used to provide voltage for the first current circuit 211 and the second current circuit 212.
- the voltage input terminal Vdg may be connected to an adjustable resistor Rdg external to the smart power module, and the adjustable resistor Rdg is used to adjust the input voltage of the voltage input terminal Vdg.
- the input voltage of the voltage input terminal Vdg can be changed, and the first current and the second current can be changed to meet the needs of users to adjust the current size, and further optimize the trade-off between turn-on loss and current overshoot relationship.
- the voltage input terminal Vdg can also be connected to an MCU (Microcontroller Unit, micro control unit), and the magnitude of Vdg can be changed by changing the pulse width output by the MCU.
- MCU Microcontroller Unit, micro control unit
- Fig. 4 is a flowchart of an embodiment of a drive control method according to an exemplary embodiment of the present invention. Based on the smart power module shown in Fig. 2 above, the drive control method includes the following steps:
- Step 401 The detection module obtains the gate voltage and the drain or collector voltage change rate of the power switch, and obtains the determination result of the gate voltage and the voltage change rate.
- the gate voltage of the power switch may be detected by the first detection circuit, and the voltage change rate of the drain or collector of the power switch may be detected by the second detection circuit, and the gate voltage may be determined by the result determination circuit.
- the voltage is compared with the first voltage threshold, the second voltage threshold, and the power supply voltage of the smart power module, and the voltage change rate is compared with the rate threshold to obtain a determination result.
- the comparison of the gate voltage with the two voltage thresholds and the power supply voltage and the comparison between the voltage change rate and the rate threshold can distinguish different stages in the power switch turn-on process to provide different driving currents for different stages. It reduces the peak current while shortening the turn-on time, thereby achieving the goal of optimizing the trade-off relationship between turn-on loss and current overshoot.
- Step 402 Under the control of the control signal for turning on the power switch received by the control signal input terminal, the detection module transmits the determination result to the drive current adjustment module.
- step 402 in the positive logic, the control signal for turning on the power switch is a high-level signal, and in the negative logic, the control signal for turning on the power switch is a low-level signal.
- Step 403 The driving current adjustment module adjusts the driving current provided to the power switch according to the determination result.
- the current selection circuit sets the first current output by the first current circuit and the second The sum of the second current output by the two current circuits is used as the driving current; according to the judgment result that the gate voltage is between the first voltage threshold and the second voltage threshold and the voltage change rate is less than the rate threshold, the first current output by the first current circuit The current is used as the driving current; according to the judgment result that the gate voltage is between the first voltage threshold and the second voltage threshold and the voltage change rate is greater than the rate threshold, the second current output by the second current circuit is used as the driving current; according to the judgment result: When the gate voltage is the power supply voltage, zero is used as the drive current.
- the selection of the first voltage threshold, the second voltage threshold, the rate threshold, and the adjustment principle of the drive current will be described in detail below.
- the first voltage threshold is Vth, and Vp ⁇ the second voltage threshold Vm ⁇ Vcc.
- the collector or drain voltage change rate is to distinguish the Miller plateau interval of the power switch, that is, the t4 interval, so the rate threshold A can be set according to the collector voltage change rate of the flat region corresponding to Vp.
- the electrode voltage drops the fastest in the t4 interval, so the voltage change rate is the largest, and when the voltage change rate is greater than the rate threshold, it means that the power switch enters the Miller platform interval.
- the first current is I1
- the second current is I2
- the detection module stops transmitting the determination result, and at this time the transistor is turned on, the transistor will be used to turn off the control signal of the power switch It is transmitted to the power switch, and the power switch starts to discharge.
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Abstract
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Claims (10)
- 一种智能功率模块,其特征在于,所述智能功率模块包括高压集成驱动芯片和功率开关;所述高压集成驱动芯片包括驱动电流调节模块、检测模块和控制信号输入端;所述控制信号输入端与所述检测模块的输入端连接;所述检测模块的输出端与所述驱动电流调节模块的输入端连接;所述驱动电流调节模块的输出端与所述功率开关的栅极连接。
- 根据权利要求1所述的智能功率模块,其特征在于,所述检测模块包括:第一检测电路、第二检测电路和结果判定电路;所述第一检测电路的第一端与所述功率开关的栅极连接;所述第二检测电路的第一端与所述功率开关的漏极或集电极连接;所述第一检测电路的第二端和所述第二检测电路的第二端均与所述结果判定电路连接。
- 根据权利要求1所述的智能功率模块,其特征在于,所述驱动电流调节模块包括:第一电流电路、第二电流电路和电流选择电路;所述第一电流电路的输出端和所述第二电流电路的输出端均与所述电流选择电路连接;其中,所述第一电流电路输出的第一电流小于所述第二电流电路输出的第二电流。
- 根据权利要求3所述的智能功率模块,其特征在于,所述高压集成驱动芯片还包括:电压输入端,所述电压输入端分别与所述第一电流电路的输入端和所述第二电流电路的输入端连接。
- 根据权利要求4所述的智能功率模块,其特征在于,所述电压输入端还与所述智能功率模块外接的可调电阻连接;所述可调电阻用于调节所述电压输入端的输入电压大小。
- 根据权利要求1所述的智能功率模块,其特征在于,所述高压集成驱动芯片还包括:晶体管;所述晶体管的栅极与所述控制信号输入端连接;所述晶体管的漏极与所述功率开关的栅极连接。
- 一种驱动控制方法,其特征在于,所述方法应用于如上述权利要求1-6任一项所述的智能功率模块,所述方法包括:检测模块获取功率开关的栅极电压和漏极或集电极的电压变化速率,并获得所述栅极电压和所述电压变化速率的判定结果;在控制信号输入端接收的用于开通功率开关的控制信号控制下,所述检测模块将所述判定结果传输至驱动电流调节模块;所述驱动电流调节模块根据所述判定结果确定向所述功率开关提供的驱动电流。
- 根据权利要求7所述的方法,其特征在于,检测模块获取所述功率开关的栅极电压和漏极或集电极的电压变化速率,并获得所述栅极电压和所述电压变化速率的判定结果,包括:第一检测电路检测所述功率开关的栅极电压;第二检测电路检测所述功率开关的漏极或集电极的电压变化速率;结果判定电路将所述栅极电压与第一电压阈值、第二电压阈值、本智能功率模块的电源电压比较,并将所述电压变化速率与速率阈值比较,得到判定结果。
- 根据权利要求7所述的方法,其特征在于,所述驱动电流调节模块根据所述判定结果确定向所述功率开关提供的驱动电流,包括:根据所述判定结果为栅极电压未位于第一电压阈值与第二电压阈值之间且所述电 压变化速率小于速率阈值,所述电流选择电路将第一电流电路输出的第一电流和第二电流电路输出的第二电流之和作为驱动电流;根据所述判定结果为栅极电压位于第一电压阈值与第二电压阈值之间且所述电压变化速率小于速率阈值,所述电流选择电路将第一电流电路输出的第一电流作为驱动电流;根据所述判定结果为栅极电压位于第一电压阈值与第二电压阈值之间且所述电压变化速率大于速率阈值时,所述电流选择电路将第二电流电路输出的第二电流作为驱动电流;根据所述判定结果为栅极电压等于所述电源电压,所述电流选择电路将零作为驱动电流。
- 根据权利要求7所述的方法,其特征在于,所述方法还包括:在控制信号输入端接收的用于开通功率开关的控制信号控制下,晶体管关断;在控制信号输入端接收的用于关断功率开关的控制信号控制下,晶体管导通,所述晶体管将所述用于关断功率开关的控制信号传输至所述功率开关,所述功率开关开始放电。
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2019
- 2019-12-24 CN CN201911351268.9A patent/CN113037059B/zh active Active
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